CN101159235A - Method for dry-type clean dielectric layer opening etching reaction chamber - Google Patents
Method for dry-type clean dielectric layer opening etching reaction chamber Download PDFInfo
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- CN101159235A CN101159235A CNA2006101169281A CN200610116928A CN101159235A CN 101159235 A CN101159235 A CN 101159235A CN A2006101169281 A CNA2006101169281 A CN A2006101169281A CN 200610116928 A CN200610116928 A CN 200610116928A CN 101159235 A CN101159235 A CN 101159235A
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- layer opening
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Abstract
The invention provides a method for a dry-cleaning etching reaction chamber of a dielectric layer opening, which comprises introducing an oxygen clean process gas in a reaction chamber, producing a plasma by the oxygen clean gas, and maintaining the plasma for a period of time to remove polymer sediment deposited on the wall of the reaction chamber. The method can overcome the disadvantages of wet-cleaning process that the wet-cleaning process has longer equipment shutdown time and the solvent used by the wet-cleaning process may severely damage the electrode, and the invention can effectively improve the cleanness in the reaction chamber.
Description
Technical field
The present invention relates to a kind of method of dry-type clean dielectric layer opening etching reaction chamber, particularly a kind of dry-type clean method of utilizing comes dielectric layer opening etching reaction chamber is carried out the method that cavity internal contamination thing is removed.
Background technology
Semiconductor technology has comprised a succession of different chemistry and the technology of physics, with small production of integrated circuits on the semiconductor-based end.But follow semiconductor technology to follow Moore's Law (Moor ' s law) prediction after inferior micron enters deep-sub-micrometer, the characteristic size of all electronic building bricks is dwindled day by day, keeps the uniformity of critical dimension and the ability of accuracy and just is restricted.When therefore any minute impurities such as particulate, organic substance and chemical contamination etc. are accumulated to a certain degree in the technology, to cause rate of finished products (yield) to reduce, formation one is the adverse factors source very, and along with the technology that enters deep-sub-micrometer, impurity is also serious day by day to the relative effect of black box, so be that each semiconductor factory is in technologic important topic to the monitoring of the levels of accumulation of impurity.
When reaction carry out be dielectric layer opening etching technology the time, can on the reative cell interior wall, deposit macromolecule impurity, therefore surpass the patient limit of technology by the quantity of avoiding foreign particle, need adding cleaning technology suitable in technology, carry out the cleaning action of suitable process reaction chamber, to avoid produced pollution thing in the technical process to cause the inefficacy of assembly, see also shown in Figure 1, in the prior art, step when utilizing wet-clean technology S1 mode to carry out product technology running cleaning, as shown in Figure 1, its step comprises as step S12 opens reactor chamber, utilize free-hand mode with an organic solvent to remove the impurity in the cavity as step S14, then use the wafer that has a photoresist layer on the surface with the adjusting process parameter as step S16, and then shown in step S2, carry out the making of online handicraft product, behind question response chamber interior walls accumulation macromolecule deposit to a specific quantity, repeat again as step S1, carry out the wet-clean processing step one time, but this kind mode must be destroyed the airtight vacuum state of reaction equation, and the inner surface of manpower wiping reaction equation, (down-time) is longer for required Equipment Downtime, and solvent will produce serious damage to electrode.
Therefore, the present invention is directed to the problems referred to above, propose a kind of dry-type clean dielectric layer opening etching reaction chamber, to solve the problems of the technologies described above.
Summary of the invention
Main purpose of the present invention is, a kind of method of dry-type clean dielectric layer opening etching reaction chamber is provided, and utilizes oxygen cleaning technology gas to produce plasma, reative cell is carried out dry-type clean technology, to reduce Equipment Downtime significantly.
Another object of the present invention is to, a kind of method of dry-type clean dielectric layer opening etching reaction chamber is provided, it can not cause damage to electrode.
A further object of the present invention is, the method for a kind of dry cleaning interlayer hole etching reaction chamber is provided, and its cost that can shorten cleaning technology significantly and be caused is wasted.
For reaching above-mentioned purpose, the present invention adopts following technical scheme:
A kind of method of dry cleaning dielectric layer opening etching reaction chamber is positioned at macromolecule pollutant on the dielectric layer opening etching reaction chamber wall in order to removal, and this method comprises prior to a dielectric layer opening etching reaction chamber inserts a wafer; In reative cell, feed an oxygen cleaning technology gas; Form a plasma by this oxygen cleaning technology gas; Keep plasma a period of time then, carry out macromolecule pollutant adsorbed on the cleaning reaction locular wall.
In sum, the present invention has improved prior art wet-clean technology can produce the problem of damage to bottom electrode, and the present invention can significantly shorten Equipment Downtime, and and then increases substantially the rate of finished products of handicraft product.
Further specify the present invention below in conjunction with drawings and Examples.
Description of drawings
Fig. 1 is the processing step flow chart of prior art.
Fig. 2 is a dry-type clean processing step flow chart of the present invention.
Flow chart when Fig. 3 operates for the present invention is applied to online handicraft product.
Fig. 4 carries out the relation between macromolecule pollutant deposition quantity on cleaning technology time point and the reaction chamber wall for having cleaning technology now when the online handicraft product of reality operates.
Fig. 5 for cleaning technology of the present invention when the running of the online handicraft product of reality, carry out macromolecule pollutant on cleaning technology time point and the reaction chamber wall and deposit relation between quantity.
Embodiment
A kind of method of dry-type clean dielectric layer opening etching reaction chamber.Process reaction chamber is a dielectric layer opening plasma etching reative cell, a dielectric layer opening plasma etching reative cell with upper/lower electrode particularly, when dielectric layer opening etching, it with the photoresistance inner surface that high molecular polymer that dominant shape becomes can be deposited in reative cell in advance, when etching continues to carry out, high molecular accumulation particulate in the reative cell will constantly be accumulated, and in such cases, will cause the rate of finished products of product and seriously influence influencing particulate.
See also Fig. 2; dry-type clean technology S4 step of the present invention comprises as step S42; at first can be the wafer of controlling sheet prior to inserting one in the reative cell; it is the bottom electrode of yittrium oxide that this wafer is used for protecting the indoor material of etching reaction; then; shown in step S44; because adsorbed deposition is the high molecular polymer based on photoresistance on the dielectric layer opening etching reaction chamber interior wall; therefore aerating oxygen cleaning technology gas in reative cell; its gas flow is about per minute 700 to 1000 standard cube centimetres (SCCM); the interior pressure of reative cell this moment is about 150 millitorrs (mtor) to 200 millitorrs (mtor); then; form a plasma as step S46 by oxygen cleaning technology gas, shown in step S48, keep this plasma a period of time; this time will be looked high molecular polymer deposition degree and decide via EPD (End Point Detector) detection system; general set point is approximately 200 seconds to 550 seconds, be generally about 250 seconds, and the best time is 400 seconds.
At this moment, be approximately radio frequency energy between 1500 watts to 1700 watts in top electrode by applying an energy, and make oxygen cleaning technology gas produce plasma.
Then, oxygen cleaning technology gas is detached reative cell, and, insert a naked wafer in reative cell, carry out the adjustment of technological parameter as step S54 as step S52.
In view of semiconductor technology based on cost consideration need can not in the breaking process much longer time, and in order effectively to control the cleanliness factor in the reative cell, therefore, when the present invention is turned round at actual board, can take steps flow chart as shown in Figure 3, carry out production and cleaning technology, to obtain a preferable production and a rate of finished products balance point.
See also shown in Figure 3, at first, shown in step S60, earlier reative cell is carried out light wet-clean (soft wet clean) preventive maintenance technology (PM), its solvent can be isopropyl alcohol (IPA) or fluorine-containing organic solvent, the PF5060 of 3M company product for example, continue as described in the step S62, reative cell is carried out a dry type cleaning of the present invention, subsequently as step S64, can carry out the making of online handicraft product, step S66 is described for another example, treat that the handicraft product actual operation reaches a special time after, can carry out a dry type cleaning again to reative cell, wherein this special time is to look technological parameter such as photoresist layer thickness, factor such as online handicraft product number and the empirical value that thereupon changes, then, as described in step S68, can carry out the making of online handicraft product, after the question response chamber operated one period long period, visual demand was carried out a light wet-clean preventive maintenance technology to reative cell, just gets back to the step shown in the step S60.
In addition, see also Fig. 4 and Fig. 5, prior art and cleaning technology of the present invention are compared, when the online handicraft product of reality operates, relation between the macromolecule pollutant deposition quantity on time and the reaction chamber wall, by can significantly finding among the figure, conventional process is after online handicraft product number arrives a specific quantity, because need open reactor chamber, utilize the artificial free-hand wet-clean technology (heavy wet clean) of carrying out, the required clean time is longer, deficient for remedying this clean caused process time of time, need the question response chamber interior walls to be deposited into one with respect to just carrying out a cleaning technology behind the quite high macromolecule pollutant of the present invention's reaction chamber wall deposition quantity, but such mode will cause the rate of finished products of assembly significantly to reduce, and the present invention can promptly carry out dry-type clean technology fast when a more a spot of reaction chamber wall macromolecule deposition, significantly improve the rate of finished products of product, effectively reduce the technology cost.
In sum, the present invention is a kind of method of dry-type clean dielectric layer opening etching reaction chamber, it is a dry-type clean technology, replace and use wet-clean technology to carry out the reative cell cleaning technology in the prior art, and then improved prior art wet-clean technology and can produce the problem of damage bottom electrode, and the present invention can significantly shorten Equipment Downtime, and and then increases substantially the rate of finished products of handicraft product.
Above-described only is a preferred embodiment of the present invention; be not to be used for limiting scope of the invention process; therefore all equivalent variations and modifications of being done according to the described shape of the present patent application claim, structure, feature and spirit all should be encompassed in the scope of patent protection of the present invention.
Claims (6)
1. the method for a dry-type clean dielectric layer opening etching reaction chamber is used to remove the macromolecule pollutant that is positioned on the dielectric layer opening etching reaction chamber wall, it is characterized in that including the following step:
In this dielectric layer opening etching reaction chamber, insert a wafer;
In this dielectric layer opening etching reaction chamber, feed an oxygen cleaning technology gas;
Form a plasma by this oxygen cleaning technology gas; And
Keep this plasma a period of time, this macromolecule pollutant is removed.
2. the method for dry-type clean dielectric layer opening etching reaction chamber as claimed in claim 1 is characterized in that: this wafer is a control sheet.
3. the method for dry-type clean dielectric layer opening etching reaction chamber as claimed in claim 1, it is characterized in that: this dielectric layer opening etching reaction chamber includes a upper and lower electrode.
4. the method for dry-type clean dielectric layer opening etching reaction chamber as claimed in claim 3, it is characterized in that: the material of this electrode is a yittrium oxide.
5. the method for dry-type clean dielectric layer opening etching reaction chamber as claimed in claim 3 is characterized in that: the formation of this plasma is by applying a radio frequency line energy in this top electrode, and this oxygen cleaning technology gas is stimulated and forms.
6. the method for dry-type clean dielectric layer opening etching reaction chamber as claimed in claim 1, it is characterized in that: keep this plasma and can carry out after a period of time this oxygen cleaning technology gas is detached this dielectric layer opening etching reaction chamber, utilize a naked wafer to carry out the technological parameter adjustment subsequently.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101169281A CN101159235A (en) | 2006-10-08 | 2006-10-08 | Method for dry-type clean dielectric layer opening etching reaction chamber |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2006101169281A CN101159235A (en) | 2006-10-08 | 2006-10-08 | Method for dry-type clean dielectric layer opening etching reaction chamber |
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| Publication Number | Publication Date |
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| CN101159235A true CN101159235A (en) | 2008-04-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2006101169281A Pending CN101159235A (en) | 2006-10-08 | 2006-10-08 | Method for dry-type clean dielectric layer opening etching reaction chamber |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102553867A (en) * | 2012-02-17 | 2012-07-11 | 上海先进半导体制造股份有限公司 | Dry cleaning method for reaction chamber of plasma etching equipment |
| CN103996621A (en) * | 2014-04-25 | 2014-08-20 | 京东方科技集团股份有限公司 | Dry etching method |
-
2006
- 2006-10-08 CN CNA2006101169281A patent/CN101159235A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102553867A (en) * | 2012-02-17 | 2012-07-11 | 上海先进半导体制造股份有限公司 | Dry cleaning method for reaction chamber of plasma etching equipment |
| CN103996621A (en) * | 2014-04-25 | 2014-08-20 | 京东方科技集团股份有限公司 | Dry etching method |
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