CN101119445A - Image sensor for improving image quality and image sensing method using the same - Google Patents
Image sensor for improving image quality and image sensing method using the same Download PDFInfo
- Publication number
- CN101119445A CN101119445A CNA2007100047633A CN200710004763A CN101119445A CN 101119445 A CN101119445 A CN 101119445A CN A2007100047633 A CNA2007100047633 A CN A2007100047633A CN 200710004763 A CN200710004763 A CN 200710004763A CN 101119445 A CN101119445 A CN 101119445A
- Authority
- CN
- China
- Prior art keywords
- color filter
- filter array
- image
- opto
- imageing sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000006243 chemical reaction Methods 0.000 claims abstract description 67
- 239000004065 semiconductor Substances 0.000 claims abstract description 65
- 230000005693 optoelectronics Effects 0.000 claims description 65
- 239000003086 colorant Substances 0.000 claims description 15
- 230000003068 static effect Effects 0.000 claims description 3
- 230000005622 photoelectricity Effects 0.000 claims 1
- 230000008859 change Effects 0.000 description 12
- 238000007796 conventional method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000004422 calculation algorithm Methods 0.000 description 4
- 238000013500 data storage Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 210000000352 storage cell Anatomy 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000012163 sequencing technique Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000013517 stratification Methods 0.000 description 2
- 238000010835 comparative analysis Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/387—Composing, repositioning or otherwise geometrically modifying originals
- H04N1/3876—Recombination of partial images to recreate the original image
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/48—Increasing resolution by shifting the sensor relative to the scene
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/201—Filters in the form of arrays
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/024—Details of scanning heads ; Means for illuminating the original
- H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/024—Details of scanning heads ; Means for illuminating the original
- H04N1/028—Details of scanning heads ; Means for illuminating the original for picture information pick-up
- H04N1/02805—Details of scanning heads ; Means for illuminating the original for picture information pick-up with photodetectors arranged in a two-dimensional array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Color Television Image Signal Generators (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Optical Filters (AREA)
Abstract
Provided are an image sensor for improving image quality and an image sensing method using the same, which can improve the quality of a sensed image without changing resolution of a color filter array and a photoelectric conversion semiconductor device for sensing an image. The image sensor for improving image quality includes: a scanner unit movable on a plane; a color filter array fixed on the scanner unit; and a photoelectric conversion semiconductor device including a plurality of pixels aligned beneath the color filter array.
Description
Technical field
The present invention relates to a kind of imageing sensor and image-sensing method that is used to improve picture quality, and be specifically related to a kind of image-sensing method that is used to improve the imageing sensor of picture quality and uses it, it can improve the picture quality of sensing and not change the color filter array that is used for sensing image and the resolution of opto-electronic conversion semiconductor device.
Background technology
Usually know that as this area imageing sensor is converted to the signal of telecommunication with the optical information of one or more dimensions.In imageing sensor, the opto-electronic conversion semiconductor device that the optical imagery of use Semiconductor substrate is converted to the signal of telecommunication is divided into two classes, i.e. metal-oxide semiconductor (MOS) (MOS) type and charge coupled device (CCD) type.
Complementary metal oxide semiconductors (CMOS) (CMOS) imageing sensor is by using the cmos semiconductor technology optical imagery to be converted to the device of the signal of telecommunication, the quantity of the quantity of the MOS transistor pixel that equals to constitute wherein, and adopt the switching manipulation of surveying MOS transistor output one by one.Compare with widely used ccd image sensor in this area, the advantage that cmos image sensor has is: method of operation is simple; Can realize various scan patterns; With can be because signal processing circuit can be integrated in the single chip with the advantage of the miniaturization of products.
Recently, for example various multimedia devices such as portable phone, PDA(Personal Digital Assistant) have extensively disposed and have been used to take pictures and/or the equipment of display image, and its medium and small camera module use is made the image input unit.Because the user needs to improve the resolution as the imageing sensor of image-input device for the demand of high quality graphic more in these devices.
Fig. 1 is the perspective view by the normal image transducer of opto-electronic conversion sensing image.
As shown in Figure 1, the normal image transducer comprises opto-electronic conversion semiconductor device 10, color filter array 20 and microlens array 30.
Opto-electronic conversion semiconductor device 10 is fixed to the scanner top, and comprises a plurality of pixels on the front surface that is arranged in opto-electronic conversion semiconductor device 10.Each pixel of opto-electronic conversion semiconductor device 10 is a light receiving unit, and produces signal charge corresponding to the luminous intensity that incides respective pixel.
Microlens array 30 comprises two-dimensional arrangements and a plurality of lens that are stacked on color filter array 20 tops, and for example the hemisphere lenticule 31.The lens of microlens array 30 and color filter array 20 is provided with, and makes lens and alignment of pixels, thereby improves the luminous intensity of the light receiving unit that incides the opto-electronic conversion semiconductor device.
Normal image transducer with this spline structure obtains view data corresponding to every kind of color by the color filter array that is divided into red, green and blue look colour filter, and is called the view data recuperating original image of algorithm from obtaining of " removing mosaic (demosaic) " by use.Yet, come recuperating original image though proposed the whole bag of tricks, in such recovery technology, conventional method causes for example distortion of aliasing (aliasing), therefore reduces picture quality.
At United States Patent (USP) the 5th, 965, the imageing sensor of the new construction that is used to prevent that picture quality from reducing is disclosed in No. 875, this picture quality reduces that the color data that is to be divided according to color by the color filter array sensing causes.According to the imageing sensor of this new construction, by using the opto-electronic conversion semiconductor device of vertical stratification, the light of incident image is sensed according to wavelength, thereby reduces by going the error in the mosaic recovery.Yet the problem that such imageing sensor has is: the manufacturing process complexity of opto-electronic conversion semiconductor device, the color separated degree by vertical stratification is lower than colour filter, therefore becomes to solve the restriction that picture quality reduces problem.
Summary of the invention
Therefore, propose exemplary embodiment of the present invention and solved the problems referred to above that take place in the prior art, and the purpose of this invention is to provide a kind of imageing sensor, it can improve the quality of the image of sensing, and keeps the structure of conventional opto-electronic conversion semiconductor device and color filter array constant.
Another object of the present invention provides a kind of image-sensing method that uses the imageing sensor that improves picture quality, and this method can easily improve the quality of the image of imageing sensor institute sensing.
In order to realize these purposes, a kind of imageing sensor that is used to improve picture quality is provided, this imageing sensor is by the opto-electronic conversion sensing image, and this imageing sensor comprises in the plane movably scanning element; Be fixed on the color filter array on the scanning element; With the opto-electronic conversion semiconductor device, be included in a plurality of pixels that color filter array is arranged below.
This imageing sensor can also comprise and is formed on the color filter array top with the microlens array corresponding to pixel this microlens array converging light.
Here, thus the end that scanning element is fixed on color filter array moves with color filter array.
And scanning element can move to spacing between pixel one by one along the horizontal level or the vertical direction of arranging about pixel.
And color filter array can comprise the colour filter with different colours, wherein filter arrangement slivering pattern.
According to a further aspect in the invention, a kind of image-sensing method that uses imageing sensor is provided, be used for by the opto-electronic conversion sensing image, the step that this method comprises is: (a) allow the light of opto-electronic conversion semiconductor device sensing by static color filter array incident; (b) storage is by the data of the image of described opto-electronic conversion semiconductor device sensing; (c) move described colour filter in the plane by scanning element; (d) by the light of described opto-electronic conversion semiconductor device sensing by color filter array incident, described color filter array stops after moving; (e) storage is by the data of another image of opto-electronic conversion semiconductor device sensing; (f) repeating step (c) is to (e); (g) according to the moving of described color filter array, relatively and analyze the data of being stored, thereby obtain to have the data of gained image of the picture quality of raising.
In exemplary embodiment, color filter array can be about laterally moving to spacing between the pixel of opto-electronic conversion semiconductor device along level or vertical direction that described pixel is arranged in the plane one by one.
Here, described color filter array can comprise the colour filter of different colours, and wherein said colour filter has the bar pattern, and described color filter array only moves in the direction perpendicular to the bar pattern.
Description of drawings
In the specific descriptions below in conjunction with accompanying drawing, above-mentioned and other aspects of the present invention will become more obvious, in the accompanying drawings:
Fig. 1 is the perspective view by the normal image transducer of opto-electronic conversion sensing image;
Fig. 2 is the perspective view that exemplary embodiment is used to improve the imageing sensor of picture quality according to the present invention;
Fig. 3 is the partial plan layout that the arrangement of color filter array shown in Figure 2 is shown;
Fig. 4 is the profile of imageing sensor that is used to improve picture quality that according to the present invention another one exemplary embodiment mode is shown;
Fig. 5 is the perspective view of imageing sensor that is used to improve picture quality that an exemplary embodiment is shown according to the present invention again, and wherein color filter array and opto-electronic conversion semiconductor device move together;
Fig. 6 is the flow chart that the image-sensing method of use imageing sensor according to the embodiment of the present invention is shown;
Fig. 7 is the plane graph that the position that colour filter with bar pattern shown in Figure 3 moves through continuously is shown;
Fig. 8 is used for according to moving of colour filter shown in Figure 7 and the view of the mark position of distinguishing between the view data of sensing;
Fig. 9 is the view of variation that the colour filter of each position that is used for corresponding diagram 8 marks is shown with time sequencing;
Figure 10 a is to illustrate according to the moving of colour filter shown in Figure 7 to 10d, about the profile of the change in location of the colour filter of incident light;
Figure 11 a is to illustrate when the image-sensing method according to exemplary embodiment of the present invention is applied to comprise the imageing sensor of color filter array to 11d, by the plane graph that moves the filter arrangement that causes continuously of the color filter array that is arranged in ceramic mosaic graphic pattern;
Figure 12 is the partial enlarged drawing in the zone " A " of the schematic diagram of the original image that uses in the simulation and original image;
Figure 13 is the schematic diagram of the image that obtains of the original image by normal image method for sensing sensing Figure 12;
To be exemplary embodiment according to the present invention have the schematic diagram of the gained image that the image-sensing method of the color filter array of bar pattern obtains by use to Figure 14;
Figure 15 is the plane graph that the arrangement of the mosaic color filter array that uses when obtaining the image of Figure 13 is shown.
Embodiment
After this, exemplary embodiment of the present invention will be described with reference to the drawings.
Fig. 2 is the perspective view of imageing sensor that is used to improve picture quality according to exemplary embodiment of the present invention, and Fig. 3 is the partial plan layout that the configuration of color filter array shown in Figure 2 is shown.
As shown in Figure 2, the imageing sensor that is used to improve picture quality according to exemplary embodiment of the present invention comprises scanning element 140, color filter array 120 and opto-electronic conversion semiconductor device 110.In this situation, preferred microlens array 130 is formed on the top of color filter array 120.
Be connected to color filter array 120 by end, serve as the strutting piece that can fixedly mount color filter array 120 as the scanning element 140 of the strutting piece that in one plane moves with scanning element 140.Scanning element 140 can be connected to peripheral control unit, thereby moves preset distance with the color filter array 120 that is fixed to scanning element 140 in horizontal or vertical direction by the mode of software.
And, scanning element 140 can be highly accurate, thereby scanning element 140 is moved to spacing between neighbor in opto-electronic conversion semiconductor device 110 one by one, make color filter array 120 between neighbor, to move to spacing one by one according to moving of scanning element 140.In this situation, color filter array 120 only can be constructed as in horizontal level of arranging about pixel or vertical direction removable.
According to moving of scanning element 140, color filter array 120 can move to spacing between pixel one by one, thereby changes and the corresponding colour filter of each location of pixels (being color), make can sensing corresponding to the image of the different colours of the colour filter of change.Since corresponding to the color change of the colour filter of each location of pixels, as mentioned above, the image of not only sensing predetermined color images, and sensing different colours.
And, when changing as mentioned above in the colour filter position, the image of the many colors of sensing, and the view data that obtains based on these colors subsequently by image processing by comparative analysis and combination with one another, therefore obtain the picture quality that improves.
And, owing to do not need to consider when color filter array 120 moves based on the image of color the conventional complicated arrangement of the colour filter in color filter array 120 when sensed, the exemplary embodiment according to the present invention be used for improve color filter array 120 that the imageing sensor of picture quality uses and can be constructed as and make the filter arrangement slivering pattern of different colours, as shown in Figure 3.The color filter array that uses in the color filter array 120 of arranging the slivering pattern as mentioned above and the normal image transducer is compared, and having can be with the easily manufactured advantage of fine pattern.
Opto-electronic conversion semiconductor device 110 is formed on below the color filter array 120, and comprises a plurality of pixels of aiming at color filter array 120.Each pixel of aiming on the front of opto-electronic conversion semiconductor device 110 is the light receiving unit that is used for sensor light, and produces signal charge corresponding to the luminous intensity that incides respective pixel.Opto-electronic conversion semiconductor device 110 can comprise MOS type (MOS type) solid state image pickup device and charge coupled device type (CCD type) solid state image pickup device.
Microlens array 130 comprises two-dimensional arrangements and is stacked on a plurality of lens on color filter array 120 tops that for example the hemisphere lenticule 131.Microlens array 130 is provided with 0 with color filter array 12, makes lens and alignment of pixels, thereby improves the luminous intensity of the light receiving unit that incides opto-electronic conversion semiconductor device 110.
According to the imageing sensor that is used to improve picture quality based on the present invention, when scanning element 140 moves the color filter array 120 that is fixed to scanning element 140, first view data that obtains by opto-electronic conversion semiconductor device 110 by the color filter array 120 before moving and be combined by image processing and proofread and correct by second view data that the color filter array 120 after moving is obtained by opto-electronic conversion semiconductor device 110, thus can obtain to have the gained view data of the picture quality of raising.
In this situation, because the color filter array 120 that moves by scanning element 140 moves to spacing between the neighbor of opto-electronic conversion semiconductor device 110 one by one, the different images data of the colour filter of the different colours by color filter array 120 sensings before not being moved are additionally obtained with respect to the same position after moving.
The imageing sensor that is used to improve picture quality with different structure of another exemplary embodiment according to the present invention will be described now.
Fig. 4 is the profile of imageing sensor that is used to improve picture quality that according to the present invention another exemplary embodiment is shown, wherein only the opto-electronic conversion semiconductor device moves, and Fig. 5 is the perspective view of imageing sensor that is used to provide picture quality that an exemplary embodiment is shown according to the present invention again, and wherein color filter array and opto-electronic conversion semiconductor device move together.
With reference to figure 4, the imageing sensor that another exemplary embodiment is used to improve picture quality according to the present invention comprises the opto-electronic conversion semiconductor device 110 that is fixed on the scanning element 100 and by the fixing color filter array 120 of fixture 125, scanning element 100 in one plane moves.And microlens array 130 is formed on color filter array 120 tops.
According to such structure, when the fixed-site of color filter array 120, opto-electronic conversion semiconductor device 110 moves to spacing between neighbor one by one by scanning element 100.In this situation, similar to above-mentioned exemplary embodiment of the present invention, pass through image processing, opto-electronic conversion semiconductor device 110, combination and proofreaied and correct first view data that obtains by opto-electronic conversion semiconductor device 110 by the color filter array 120 before moving and second view data that obtains by opto-electronic conversion semiconductor device 1110 by the color filter array 120 after moving, thus can obtain to have the data of gained image of the picture quality of raising.
With reference to figure 5, the imageing sensor that is used to improve picture quality of an exemplary embodiment comprises the opto-electronic conversion semiconductor device 110 that is fixed on the scanning element 100 again according to the present invention, be formed on color filter array 120 and microlens array 130 on the opto-electronic conversion semiconductor device 110 successively and regularly, scanning element 100 in one plane moves.In this situation,, microlens array 130 improves the incident light intensity thereby comprising hemisphere lenticule 131.
According to an exemplary embodiment more of the present invention, opto-electronic conversion semiconductor device 110 is formed on the scanning element 100, this scanning element 100 can move to spacing between neighbor one by one, and color filter array 120 is formed on the top of opto-electronic conversion semiconductor device 110, thus can be by motion scan unit 100 and between neighbor the mobile color filter array 120 in spacing ground one by one.Therefore, according to moving of scanning element 100, therefore colour filter (the being color) change with the photophase of inciding the precalculated position provides and the identical effect of above-mentioned exemplary embodiment according to the present invention.
After this, will describe use the image-sensing method of imageing sensor that is used to improve picture quality of according to the present invention exemplary embodiment, it has resolution and improves effect.
Fig. 6 is the flow chart of image-sensing method that the imageing sensor of use exemplary embodiment according to the present invention is shown.
As shown in Figure 6, according to the image-sensing method that uses by the imageing sensor of opto-electronic conversion sensing image, the light by static color filter array incident is sensed to be first image (S110) by a plurality of pixels of the opto-electronic conversion semiconductor device aimed at color filter array.In this situation, the data of first image are corresponding to the signal of telecommunication, and the light intensity (being the intensity of optical signalling) that incides the light receiving unit of opto-electronic conversion semiconductor device is converted into this signal of telecommunication.By each color corresponding to the color filter array of each pixel, the data of first image obtain with color data.
By peripheral control unit, the storage of first image of Huo Deing (S120) in the data storage cell of the image capturing device of for example digital camera as mentioned above.
Then, the scanning element that is connected to color filter array in one plane moves, thereby color filter array moves (S130) according to moving of scanning element on same level or Different Plane.In this situation, scanning element can be about laterally moving along level or vertical direction that pixel is arranged in the plane, and scanning element has moved the spacing between the neighbor of opto-electronic conversion semiconductor device.
When between the mobile in the plane neighbor of color filter array apart from the time, change with the colour filter (being color) of the corresponding color filter array of light incoming position of identical image.For example, the colour filter corresponding to the precalculated position becomes green color filter from red color filter.
Here, for mobile color filter array, as mentioned above, if being used to improve the imageing sensor of picture quality has and can make color filter array according to the structure that moves of scanning element then be fine, be fixed on the structure of color filter array end such as scanning element wherein, perhaps wherein opto-electronic conversion semiconductor device and color filter array are formed on structure on the scanning element successively.That is, the structure of imageing sensor can differently be changed under the transportable condition of color filter array.
Because the displacement of color filter array equals the distance between the pixel, the light that incides same position is sensed, its state for other conditions of colour filter (being color) change only without any change.Therefore, under the condition that the colour filter (being color) of the color filter array that moves changes, the incident light by color filter array is sensed to be second image (S140) by a plurality of pixels of opto-electronic conversion semiconductor device.Then, second image of institute's sensing is respectively stored in the data storage cell, the data (S150) of first image that this memory cell has obtained before having stored and having moved.
Therefore, the data of first and second images respectively corresponding to when each of two colour filters of the light that incides same position by having different colours by opto-electronic conversion semiconductor device sensed data, therefore, obtained based on the data that in conventional method for sensing, can not obtain extra color.
In order further to improve image resolution ratio, after the data of second image have been stored in the data storage cell, scanning element can move color filter array the distance between the pixel once more, and the light that therefore incides same position is the 3rd image by the colour filter that has again a color by opto-electronic conversion semiconductor device sensing.In this situation, the data of the 3rd image additionally are stored in the data storage.
By repeating such program, store on the same position view data successively about the colour filter all colours.
In this situation, when color filter array had the structure of the filter arrangement slivering pattern of different colours wherein, color filter array can move perpendicular to bar.When the color filter array with bar pattern when spacing ground is mobile one by one between pixel perpendicular to stripe pitch, the opto-electronic conversion semiconductor device comes the sensing image data with respect to every kind of situation that same light is wherein passed redness, green or blue color filter.
The moving of color filter array that below description is had the bar pattern.
Fig. 7 is the plane graph that the position that colour filter with bar pattern shown in Figure 3 moves through continuously is shown, Fig. 8 is the view of the mark position that is used for distinguishing between view data, wherein view data is according to the moving and sensing of colour filter shown in Figure 7, and Fig. 9 is the view of variation that the colour filter of each position that is used for corresponding diagram 8 marks is shown with time sequencing.Figure 10 a is to illustrate according to the moving of colour filter shown in Figure 7 to 10d, and colour filter is about the profile of the change in location of incident light.The assembly that has same structure and function is in the drawings represented by same reference numerals.
As Fig. 7,8 and 10a to shown in the 10d, for example when color filter array is positioned at home position based on dotted line shown in Figure 7, be moved to the left preset distance one time, and be that unit moves right twice subsequently with the preset distance, the light that passes each colour filter 121,122 and 123 via the microlens array 130 of each position can be by the pixel sensing of opto-electronic conversion semiconductor device 110.In this situation, when color filter array move right between pixel distance and between the mobile once more left then pixel this apart from the time, color filter array is just got back to its home position before moving.In addition, can adopt various moving methods, make the pixel sensing of each position pass through the light of each red color filter 121, green color filter 122 and blue color filter 123.
For sensing when color filter array is mobile as mentioned above passes the light of each colour filter of each color, according to reference to figure 7,10a to the described method of 10d, for example be used for each position colour filter 1., 2. and 3. and change with order shown in Figure 9.
Can calculate by formula 1 by the color data of opto-electronic conversion semiconductor device 110 sensings by colour filter corresponding to each position.Here, " C
1", " C
2" and " C
3" represent color data respectively corresponding to position image 1., 2. and 3., " k " represents the position, and the order of number of times is moved in " k1 ", " k2 ", " k3 " and " k4 " representative corresponding to the colour filter based on each position.And " r ", " g " and " b " represent the sensitivity data of the image that obtains by corresponding to each pixel sensing of each colour filter that passes the time when the light by each red, green and blue look colour filter incident respectively.
Therefore, according to mobile number of times, the sensitivity by each red, green and blue look colour filter sensed data can be expressed as the color data shown in the formula 1.
Formula 1
For example, be compared analysis by image processing, for example use the mathematical algorithm of expression in the formula 1, therefore obtain to have the data (S160 of Fig. 6) of gained image of the picture quality of raising according to the data of mobile storage in table of color filter array.
To provide the description of using the image-sensing method of the imageing sensor of exemplary embodiment when filter arrangement about color filter array becomes ceramic mosaic graphic pattern below according to the present invention.
Figure 11 a is to illustrate when the image-sensing method of the exemplary embodiment according to the present invention is applied to the imageing sensor that comprises color filter array to 11d, is arranged in the plane graph that moves the filter arrangement that causes continuously of the color filter array of ceramic mosaic graphic pattern.
As Figure 11 a to shown in the 11d, color filter array for example to the left from the home position (promptly in positive horizontal direction) move once, downwards (promptly in negative vertical direction) move once, then to the right when (promptly in negative horizontal direction) mobile one time, the light that passes each colour filter by the microlens array based on each position can be by the pixel sensing of opto-electronic conversion semiconductor device.
In this situation, 5. the location of pixels that passes through when each incident light invest successively, 6., 7. and 8. the time, and colour filter or imageing sensor have moved distance between the pixel at each moving direction.After this, when color filter array makes progress (promptly in positive vertical direction) when moving one time, color filter array is got back to the home position.
For example, the image that obtains by 5. colour filter in the position corresponding to by red color filter once, by twice of green color filter with by blue color filter image once, identical with position colour filter 2. corresponding to Fig. 8.About remaining position 6., 7. and 8., can be by using with reference to the formula 1 described same way as color data suitable according to each position calculation.
Therefore, the data of storing according to moving of color filter array are compared analysis by the image processing of using mathematical algorithm, this mathematical algorithm can be identical with formula 1 mode according to pattern move and the mobile number of times of color filter array is used, therefore obtain to have the data of gained image of the picture quality of raising.
Describing below will be at the analog result of the effect of the image-sensing method of the imageing sensor that use exemplary embodiment according to the present invention is shown.
Figure 12 is the partial enlarged view in zone " A " that is used in the view and the original image of the original image in the simulation, and Figure 13 is by using Baeyer (Bayer) color pattern to remove the view of the image that the original image of mosaic mode sensing Figure 12 obtains with bilinearity, and this method for sensing is conventional image-sensing method.Figure 14 is the view that comes the image that the original image of sensing Figure 12 obtains by the image-sensing method that uses the color filter array with bar pattern of exemplary embodiment according to the present invention, and wherein color filter array moves with order shown in Figure 7.Figure 15 is the plane graph that the arrangement of the mosaic color filter array that uses when obtaining the image of Figure 13 is shown.
Referring to figs. 12 to 15, when the part of the partial concretization that is compared to each other, be appreciated that by Figure 13 the image that obtains by the normal image method for sensing has the resolution lower than original image shown in Figure 12.On the contrary, almost the original image with Figure 12 is identical to be appreciated that the image of the Figure 14 that obtains from the image-sensing method by exemplary embodiment of the present invention, and its similarity degree reaches the degree that can not find any difference between two images.
And, the result who obtains when the conventional method that is compared to each other in number by Figure 13 and method of the present invention by Figure 14 obtain as a result the time, the redness that is compared to of the error that takes place in error that takes place in the method for the present invention of Figure 14 and the conventional method at Figure 13 is 4.46%, for green is 15.6%, and for blueness is 4.72%, this means be less than conventional method greatly according to the error in the method for exemplary embodiment of the present invention.In this situation, by formula 2 errors of calculation, the color data that obtains by each method of " a " representative wherein, the color data of the original image that " c " representative is shown in Figure 12, and " m " and " n " represents the position.
Formula 2
Therefore, when adopting the image-sensing method that uses the imageing sensor of exemplary embodiment according to the present invention, the quality of the image of sensing has compared with prior art improved, therefore the resolution sensing image to improve.
As mentioned above, the imageing sensor of exemplary embodiment and image-sensing method have following effect according to the present invention.
The imageing sensor that exemplary embodiment according to the present invention is used to improve picture quality uses the mode of colour filter change in location, use conventional opto-electronic conversion semiconductor device and color filter array simultaneously and do not change its size, thus can improve sensing image quality and do not have cost to increase and/or the reduction of sensing performance.
And, when the image-sensing method of exemplary embodiment moves movably color filter array in pixel cell according to the present invention, with each colour filter sensing identical image with different colours, therefore guarantee the view data of each color, therefore can easily improve the quality of the image of imageing sensor institute sensing.
Though described exemplary embodiment of the present invention for schematic purpose, it will be apparent to one skilled in the art that various improvement, interpolation and replacement are possible, and the spirit and scope of the present invention that do not break away from claim and limited.
The application requires the priority of the korean patent application submitted to Korea S Department of Intellectual Property on August 2nd, 2006 10-2006-0073048 number, and its whole contents is quoted herein as a reference.
Claims (10)
1. imageing sensor that is used to improve picture quality, described imageing sensor is by the photoelectricity sensing image that is converted, and described imageing sensor comprises:
Scanning element movably in the plane;
Be fixed on the color filter array on the described scanning element; With
The opto-electronic conversion semiconductor device is included in a plurality of pixels that described color filter array is arranged below.
2. imageing sensor according to claim 1, thus also comprise the microlens array that is formed on the described color filter array top corresponding to described pixel.
3. imageing sensor according to claim 1, thus wherein said scanning element is fixed on the end of described color filter array and moves with color filter array.
4. imageing sensor according to claim 1, wherein said scanning element moves to spacing between pixel one by one.
5. imageing sensor according to claim 1, wherein said scanning element only move in the horizontal level or the vertical direction of arranging about described pixel.
6. imageing sensor according to claim 1, wherein said color filter array comprises the colour filter with different colours, wherein said filter arrangement slivering pattern.
7. a use comes the image-sensing method of the imageing sensor of sensing image by opto-electronic conversion, and described method comprises:
(a) by the light of opto-electronic conversion semiconductor device sensing by static color filter array incident;
(b) storage is by the data of the image of described opto-electronic conversion semiconductor device sensing;
(c) move described colour filter in the plane by described scanning element;
(d) by the light of described opto-electronic conversion semiconductor device sensing by color filter array incident, described color filter array stops after moving;
(e) storage is by the data of another image of opto-electronic conversion semiconductor device sensing;
(f) repeating step (c) is to (e); With
(g) relatively and analyze the data of being stored that move, according to described color filter array thus obtain to have the data of gained image of the picture quality of raising.
8. method according to claim 7, wherein said color filter array moves to spacing between the pixel of described opto-electronic conversion semiconductor device one by one.
9. method according to claim 7, wherein said color filter array is about laterally moving along level or vertical direction in the plane that described pixel is arranged.
10. method according to claim 7, wherein said color filter array comprises the colour filter of different colours, wherein said colour filter has the bar pattern, and described color filter array only moves in the direction perpendicular to the bar pattern.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060073048A KR100821346B1 (en) | 2006-08-02 | 2006-08-02 | Image sensor for improving the image quality and method of sensing the image for improving it |
KR73048/06 | 2006-08-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN101119445A true CN101119445A (en) | 2008-02-06 |
Family
ID=39028843
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2007100047633A Pending CN101119445A (en) | 2006-08-02 | 2007-01-30 | Image sensor for improving image quality and image sensing method using the same |
Country Status (4)
Country | Link |
---|---|
US (1) | US20080030803A1 (en) |
JP (1) | JP4642816B2 (en) |
KR (1) | KR100821346B1 (en) |
CN (1) | CN101119445A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102938136A (en) * | 2012-07-19 | 2013-02-20 | 中国人民解放军国防科学技术大学 | Method for defogging single images based on Bayer formats rapidly |
CN106412533A (en) * | 2015-08-03 | 2017-02-15 | 索尼公司 | Digital imaging device, digital imaging equipment and digital imaging method |
CN105100558B (en) * | 2014-05-16 | 2018-09-21 | 豪威科技股份有限公司 | Wafer level camera with removable chromatic filter group |
CN112839215A (en) * | 2019-11-22 | 2021-05-25 | 华为技术有限公司 | Camera module, camera, terminal equipment and image information determining method |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101499540B1 (en) * | 2008-10-24 | 2015-03-06 | 삼성전자주식회사 | Image pick-up device and image processing method using the same |
JP5476832B2 (en) * | 2009-07-23 | 2014-04-23 | ソニー株式会社 | Solid-state imaging device and camera |
JP5760811B2 (en) * | 2011-07-28 | 2015-08-12 | ソニー株式会社 | Solid-state imaging device and imaging system |
KR102469426B1 (en) | 2015-10-27 | 2022-11-22 | 삼성전자주식회사 | Image processing apparatus and operating method thereof |
US10904493B2 (en) * | 2019-04-02 | 2021-01-26 | The Boeing Company | Filter alignment for multi-spectral composite image |
WO2021171905A1 (en) * | 2020-02-28 | 2021-09-02 | パナソニックIpマネジメント株式会社 | Imaging device |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4543601A (en) * | 1981-12-25 | 1985-09-24 | Tokyo Shibaura Denki Kabushiki Kaisha | Solid state image sensor with high resolution |
JPS59174085A (en) * | 1983-03-23 | 1984-10-02 | Toshiba Corp | Color solid-state image pickup device |
US4652928A (en) * | 1983-06-15 | 1987-03-24 | Kabushiki Kaisha Toshiba | Solid state image sensor with high resolution |
US5282043A (en) * | 1992-01-21 | 1994-01-25 | Robert Bosch Gmbh | Color video camera and method for improving resolution of a semiconductor image sensor |
JP2566087B2 (en) * | 1992-01-27 | 1996-12-25 | 株式会社東芝 | Colored microlens array and manufacturing method thereof |
US5402171A (en) * | 1992-09-11 | 1995-03-28 | Kabushiki Kaisha Toshiba | Electronic still camera with improved picture resolution by image shifting in a parallelogram arrangement |
JPH06350931A (en) * | 1993-06-02 | 1994-12-22 | Hamamatsu Photonics Kk | Solid-state image pickup device |
US6803949B1 (en) * | 1995-12-27 | 2004-10-12 | Canon Kabushiki Kaisha | Image sensing apparatus and method |
GB9618717D0 (en) * | 1996-09-07 | 1996-10-16 | Philips Electronics Nv | Image sensor |
US6043481A (en) * | 1997-04-30 | 2000-03-28 | Hewlett-Packard Company | Optoelectronic array device having a light transmissive spacer layer with a ridged pattern and method of making same |
JPH1126737A (en) * | 1997-06-30 | 1999-01-29 | Victor Co Of Japan Ltd | Solid-state image sensing device |
JP3620237B2 (en) | 1997-09-29 | 2005-02-16 | ソニー株式会社 | Solid-state image sensor |
JP2003163940A (en) | 2001-11-28 | 2003-06-06 | Seiko Epson Corp | Digital camera and imaging method thereby |
JP2004056721A (en) * | 2002-07-24 | 2004-02-19 | Minolta Co Ltd | Image input device |
US8724006B2 (en) * | 2004-01-26 | 2014-05-13 | Flir Systems, Inc. | Focal plane coding for digital imaging |
JP2005260383A (en) * | 2004-03-10 | 2005-09-22 | Nec Corp | Image input device and image input method for use therein |
JP4665422B2 (en) | 2004-04-02 | 2011-04-06 | ソニー株式会社 | Imaging device |
US7420592B2 (en) * | 2004-06-17 | 2008-09-02 | The Boeing Company | Image shifting apparatus for enhanced image resolution |
KR20060072172A (en) * | 2004-12-22 | 2006-06-28 | 엠텍비젼 주식회사 | Image sensor having high photo sensitivity and method for production thereof |
KR20060077709A (en) * | 2004-12-30 | 2006-07-05 | 동부일렉트로닉스 주식회사 | Cmos image sensor |
CN100413304C (en) * | 2005-05-09 | 2008-08-20 | 光宝科技股份有限公司 | Adjustable scanning device and regulating method thereof |
US20070171284A1 (en) * | 2006-01-23 | 2007-07-26 | Intel Corporation | Imager resolution enhancement based on mechanical pixel shifting |
-
2006
- 2006-08-02 KR KR1020060073048A patent/KR100821346B1/en not_active IP Right Cessation
-
2007
- 2007-01-30 CN CNA2007100047633A patent/CN101119445A/en active Pending
- 2007-02-16 US US11/707,139 patent/US20080030803A1/en not_active Abandoned
- 2007-07-30 JP JP2007198043A patent/JP4642816B2/en not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102938136A (en) * | 2012-07-19 | 2013-02-20 | 中国人民解放军国防科学技术大学 | Method for defogging single images based on Bayer formats rapidly |
CN105100558B (en) * | 2014-05-16 | 2018-09-21 | 豪威科技股份有限公司 | Wafer level camera with removable chromatic filter group |
CN106412533A (en) * | 2015-08-03 | 2017-02-15 | 索尼公司 | Digital imaging device, digital imaging equipment and digital imaging method |
US10178360B2 (en) | 2015-08-03 | 2019-01-08 | Sony Corporation | Imaging sensor coupled with layered filters |
CN112839215A (en) * | 2019-11-22 | 2021-05-25 | 华为技术有限公司 | Camera module, camera, terminal equipment and image information determining method |
WO2021098349A1 (en) * | 2019-11-22 | 2021-05-27 | 华为技术有限公司 | Camera module, camera, terminal device and image information determination method |
CN112839215B (en) * | 2019-11-22 | 2022-05-13 | 华为技术有限公司 | Camera module, camera, terminal device, image information determination method and storage medium |
Also Published As
Publication number | Publication date |
---|---|
KR20080012061A (en) | 2008-02-11 |
JP4642816B2 (en) | 2011-03-02 |
JP2008042907A (en) | 2008-02-21 |
KR100821346B1 (en) | 2008-04-10 |
US20080030803A1 (en) | 2008-02-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101102388B (en) | Image sensor and image sensing method using the same | |
CN101119445A (en) | Image sensor for improving image quality and image sensing method using the same | |
US7847849B2 (en) | Solid-state imaging device, driving method thereof, and camera | |
US10483314B2 (en) | Imaging device camera system and driving method of the same | |
JP5232118B2 (en) | Imaging device and electronic camera | |
US20120274811A1 (en) | Imaging devices having arrays of image sensors and precision offset lenses | |
CN102118551A (en) | Imaging device | |
EP2540077A1 (en) | Increasing the resolution of color sub-pixel arrays | |
CN101981917A (en) | Imaging device, imaging module, electronic still camera, and electronic movie camera | |
KR20080091023A (en) | Solid-state imaging device and imaging apparatus | |
CN101854488A (en) | The signal processing method of solid camera head, solid camera head and camera head | |
WO2014007282A1 (en) | Color imaging element and imaging device | |
JP2008011532A (en) | Method and apparatus for restoring image | |
CN107579084A (en) | Imaging sensor with the diode for sharing a colour filter and a lenticule | |
US7961239B2 (en) | CMOS image sensor with interpolated data of pixels | |
CN105100558A (en) | Wafer level camera having movable color filter grouping | |
US7110031B2 (en) | State image pickup apparatus having pixel shift layout | |
US7355156B2 (en) | Solid-state image pickup device, image pickup unit and image processing method | |
EP2680591B1 (en) | Color imaging device | |
CN103299643A (en) | Color imaging device | |
US8964087B2 (en) | Imaging device, method for controlling imaging device, and storage medium storing a control program | |
US20050230597A1 (en) | Image sensing device for improving image quality and reducing color shift effect | |
JP2005110104A (en) | Solid-state imaging apparatus | |
JP2004112738A (en) | Resolution conversion method and pixel data processing circuit for single-ccd color-image sensor | |
JP2011254266A (en) | Solid-state image sensor and electronic information apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20080206 |