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CN101082770B - Pattern forming method and pattern forming apparatus - Google Patents

Pattern forming method and pattern forming apparatus Download PDF

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Publication number
CN101082770B
CN101082770B CN2007101087801A CN200710108780A CN101082770B CN 101082770 B CN101082770 B CN 101082770B CN 2007101087801 A CN2007101087801 A CN 2007101087801A CN 200710108780 A CN200710108780 A CN 200710108780A CN 101082770 B CN101082770 B CN 101082770B
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China
Prior art keywords
resin material
pattern
substrate
mould
applies
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CN2007101087801A
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Chinese (zh)
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CN101082770A (en
Inventor
奥岛真吾
关淳一
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Canon Inc
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Canon Inc
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444Surface micromachining, i.e. structuring layers on the substrate
    • B81C1/0046Surface micromachining, i.e. structuring layers on the substrate using stamping, e.g. imprinting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/84Manufacture, treatment, or detection of nanostructure
    • Y10S977/887Nanoimprint lithography, i.e. nanostamp

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  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Casting Or Compression Moulding Of Plastics Or The Like (AREA)

Abstract

A pattern forming method for forming a pattern on a pattern forming material on a substrate by using an imprint pattern provided to a mold is constituted by preparing a substrate having thereon a pattern forming area, disposing the pattern forming material placed in an uncured state in the pattern forming area in a dispersion state at a plurality of positions at different intervals, and curing the pattern forming material in a state in which the pattern forming material is deformed in a shape corresponding to a shape of the imprint pattern provided to the mold.

Description

Pattern formation method and pattern forming device
Technical field
The present invention relates to a kind of imprinted pattern of being provided with for mould (perhaps template) and form the pattern formation method that forms pattern on the material, and relate to a kind of pattern forming device at the pattern on the substrate by use.
Background technology
In recent years, for example, as people such as Stephan Y.Chou at Appl.Phys.Lett., Vol.67, Issue21, what proposed among the PP.3114-3116 (1995) is such, and people's attention has been developed and be subjected to the precision processing technology that the fine structure that is used for being arranged on the mould is transferred on the member to be processed (for example resin material or metal material).This technology is called nano impression (nanoimprint) technology or nanometer mold pressing (nanoembossing) technology, and is provided at the machining resolution on several nanometer scale.Thus, people expect that this technology is applied in the semiconductor fabrication of following generation, replace exposure device for example multiple step format projection exposure device, scanner etc.In addition, nanometer embossing is the three-dimensional structure of processed wafer level jointly, thereby people expect this technology and are applied to the production technology of the optical devices such as photonic crystal, and in the production technology of the biochip such as μ-TAS (micro-total analysis system).
About nanometer embossing, in the conference proceedings of the 24th SPIE microlithography technology international symposium in March, 1999 California, USA SantaClara city: emerging photoetching technique III (the 3676th volume, first, the 379th page to the 389th page), following method has been proposed.
At first, on the surface of quartz base plate, form fine structure, with the preparation mould.
In addition, by preparing workpiece on the machining area that ultraviolet ray (UV) curable liquid resin material dropwise is applied to substrate.
Next, with mould and workpiece alignment, so that the curable resin material of UV is filled in the interval between mould and the substrate.Then, with the resulting structure of UV rayed, with the curable resin material of UV curing.
At last, remove described mould from described workpiece.
In addition, U.S. Patent Application Publication No.US2004/017077 has proposed a kind of method that is controlled so as to the curable resin material of UV curing under the state that has required separation distance therebetween at mould and substrate.
In the 4th nano impression and the summary 20P-5-39 of the paper of nano print technology international conference in October, 2005 Nara, Japan city, the applying method of a kind of shape resin material has been proposed, wherein, the amount of control resin material when the potting resin material, can not cause according to the position since the evaporation of resin material occur excessive or not enough.In this applying method, apply many melted resin materials, and considering to apply the amount of regulating resin material in the process under the situation that applies order and these evaporation capacity of each melted resin material, till each is filled.
By the way, along with needing high-resolution Precision Machining recently day by day, in order to realize more high-precision processing when the potting resin material, in addition above-mentioned impression process technology by the situation of commercial Application under, need prevent that the resin material amount from depending on the position and excessive or not enough.For example, when potting resin material between mould and substrate, may cause resin material to depend on the position and excessive or not enough owing to the evaporation of curable liquid resin material, the shape of mould, the strain of substrate etc., machining precision reduces thereby cause in some cases.
This will describe by above-mentioned impression process technology is applied in the semiconductor fabrication below as an example more specifically.
Mould has impression shape (concaveconvex shape), and for example, its height (the perhaps degree of depth) is tens nanometers, with as required processing graphic pattern.In addition, under many circumstances, described mould can produce fluctuation, strain etc.Similar, described substrate also can produce fluctuation, strain etc., in addition, also has it by previous step and highly is for example structure of tens nanometers.In addition, when applying the resinous wood gob, may cause the amount difference of resin material partly owing to the evaporation of resin material.
From the angle of critical dimension (CD), it is the pellicular resins materials of tens nanometers to hundreds of nanometers that above-mentioned process technology needs thickness.In this resin material very in a small amount, because the shape of above-mentioned mould, substrate strain, resin material evaporation etc., can occur the filling of local inadequate resin material in some cases, perhaps on the thickness of resin material layer, produce unacceptable scrambling.Thus, essential control resin material amount, thus it is local excessive or not enough can not cause depending on mold shape, substrate strain or resin material evaporation resin material amount.About during the potting resin material, causing the excessive or not enough this problem that depends on the position of resin material, for example known and to have dripped shape resin material applying method described in the summary of the paper of above-mentioned the 4th nano impression and the international conference of nano print technology owing to resin material evaporation.
Yet, in the method, be difficult to continuously accurately control liquid very in a small amount basically.In addition, this method is attended by such problem, that is, cause amount of liquid to be made mistakes, perhaps owing to being used to prevent that the condition setting that resin material measures wrong accurate temperature control from causing cost to increase.
Summary of the invention
Realized the present invention in view of the above problems.Fundamental purpose of the present invention is to provide pattern formation method and the pattern forming device that addresses the above problem.
According to an aspect of the present invention, provide a kind of by using the imprinted pattern that is provided with to mould to form the pattern formation method that forms pattern on the material at the pattern on the substrate, this pattern formation method comprises:
Preparation has the substrate that pattern forms the zone thereon;
The pattern formation material that will be in its uncured state is arranged on described pattern with disperse state and forms in the zone on a plurality of positions of different spacing; And
Forming material deformation at described pattern be under the state with the corresponding shape of shape of the imprinted pattern of being provided with for described mould, solidifies described pattern formation material.
In described pattern formation method, described pattern forms on each position of described a plurality of positions that material can be arranged on different spacing by identical amount, perhaps can be arranged on described a plurality of positions of different spacing by mutually different amount.
According to a further aspect in the invention, provide a kind of pattern forming device of carrying out above-mentioned pattern formation method, this pattern forming device comprises:
The mould retaining part is used to keep described mould;
The substrate retaining part is used to keep described substrate; And
Applying portion is used for that described pattern is formed material and is applied to described substrate.
According to another aspect of the invention, provide pattern transfer-printing method as described below and pattern transfer equipment (1) to (10).
(1) a kind of by filling curable liquid resin material between mould and the substrate and solidifying this liquid resin material with the pattern transfer-printing method on the shape transferred thereon of the described mould curing resin material to the described substrate, wherein, control the position that applies of described curable liquid resin material, thereby when filling described resin material between described mould and described substrate, what can not cause the resin material amount depends on the excessive or not enough of filling position.
(2) in the pattern transfer-printing method of (1), control the position that applies of described curable liquid resin material according to the evaporation capacity of described resin material.
(3) in the pattern transfer-printing method of (1), control the position that applies of described resin material according to the shape of the shape of described mould and/or described substrate.
(4) in the pattern transfer-printing method of (1),, control the position that applies of described resin material according to the stack of this three factors of the shape of the shape of the evaporation capacity that comprises described resin material, described mould and described substrate.
(5) in any pattern transfer-printing method of above-mentioned (1) to (4), by being adjusted in the position that applies that each applies described curable liquid resin material that the one-tenth that applies with identical amount on the position drips, control the position that applies of described curable liquid resin material.
(6) a kind of by filling curable liquid resin material between mould and the substrate and solidifying this liquid resin material with the pattern transfer equipment on the shape transferred thereon of the described mould curing resin material to the described substrate, wherein, this pattern transfer equipment comprises and applies position control, be used to control the position that applies of described curable liquid resin material, thereby when filling described resin material between described mould and described substrate, what can not cause the resin material amount depends on the excessive or not enough of filling position.
(7) in the pattern transfer equipment of (6), describedly apply the position that applies that position control is constructed to regulate according to the evaporation capacity of described resin material described curable liquid resin material.
(8) in the pattern transfer equipment of (6), the described position control that applies is constructed to the position that applies according to the described resin material of shape adjustment of the shape of described mould and/or described substrate.
(9) in the pattern transfer equipment of (6), describedly apply the position that applies that position control is constructed to regulate according to the stack of this three factors of the shape that comprises the shape of the evaporation capacity of described resin material, described mould and described substrate described resin material.
(10) in any pattern transfer equipment of above-mentioned (6) to (9), the described position control that applies is constructed to be adjusted in the position that applies that each applies described curable liquid resin material that the one-tenth that applies with identical amount on the position drips.
In the present invention, in order to be transferred to the imprinted pattern of mould setting on the resin material on the substrate, can use following method.Promptly, in the zone of wanting to the imprinted pattern of mould setting on the transfer printing substrate thereon, the resin material that will be in its uncured state is arranged on a plurality of positions on the substrate with disperse state, and described resin material and described mould are in contact with one another, and solidifies described resin material subsequently.In this case, on each position in a plurality of positions on described substrate, with the different spacing with respect to the adjacent position, described resin material is by identical amount setting.
Here, term " disperse (dispersion) state " comprises that also the center that applies the position of resin material wherein is in the situation of discrete state.In other words, during coining manipulation, the various piece of resin material physical separation is each other opened, but can be in contact with one another.In addition, on each position in the described a plurality of positions on substrate, resin material needn't necessarily be pressed identical amount setting.
According to the present invention, during coining manipulation, can implement to control so that the amount homogenising of the resin material that between mould and substrate, inserts.
In case consider that these and other purposes, features and advantages of the present invention will be more apparent below in conjunction with the description of accompanying drawing to the preferred embodiments of the present invention.
Description of drawings
Fig. 1 is illustrated in the synoptic diagram that the resin material in the pattern transfer in the embodiments of the invention 1 applies the structure example of position control.
Fig. 2 is illustrated in the evaporation rate of liquid state (curable) resin material that is applied in the embodiments of the invention 1 and figure over time thereof.
Fig. 3 (a), Fig. 3 (b), Fig. 4, Fig. 5, Fig. 6 (a) and Fig. 6 (b) are illustrated in the synoptic diagram that resin material in the embodiments of the invention 1 applies the structure example of position control.
Fig. 7 is illustrated in the synoptic diagram that resin material in the embodiments of the invention 2 applies the structure example of position control.
Fig. 8 (a) and Fig. 8 (b) are illustrated in the embodiments of the invention 2 under the situation that the resin material that becomes to drip applies by row, apply the synoptic diagram of the structure example of position according to the shape control resin material of mould.
Fig. 9 is the synoptic diagram that resin material applies the structure example of position when being illustrated in the substrate that is out of shape in use in the embodiments of the invention 2.
Embodiment
(first embodiment)
According to being used for of present embodiment by using imprinted pattern to have following feature in a kind of pattern formation method that the pattern on the substrate forms formation pattern on the material to the mould setting.
The first, prepare and have the substrate that pattern forms the zone on it, and, forming on the zone at pattern, the pattern that will be in its uncured state forms material and is arranged on a plurality of positions of different spacing by disperse state.Form material as for described pattern, can use the resin material or the thermoset resin material of light curable.
, described mould and described substrate relative to one another be provided with, form material and get involved under the state between mould and the substrate thereby the place is set forth in pattern thereafter.Then, little by little reduce the gap between mould and the substrate, making pattern form material deformation is and the corresponding shape of shape of the imprinted pattern that is provided with to mould then to solidify this pattern and form material.Form material in order to solidify this pattern,, shine with ultraviolet (UV) line, perhaps heating according to the characteristic that forms the resin material of material as pattern.
As for the relative position between described mould and the described substrate (in the face of substrate on the direction), preferably in enforcing location control, solidify described pattern and form material.
Form material at pattern and be arranged on the shape of point-like in a plurality of locational situation on the described substrate, through behind the preset time, pattern forms material and just is placed with corresponding with the whole surface in the imprinted pattern zone of described mould.
In this case, when pattern forms material and comprises volatile constituent or evaporation, should the face in zone during coining manipulation in pattern on the direction form quantity of material may occur excessive or not enough.
Consideration from pattern is formed material be arranged on the substrate the time be carved into this pattern and form a period of time till material is out of shape along with the shape of imprinted pattern.In the zone that needs the short period section, with first spacing pattern is set and forms material.In the zone that needs the long period section, with second spacing shorter pattern is set and forms material than first spacing.As a result, when solidifying described pattern and form material, can control so that in the face in the imprinted pattern zone pattern on the direction form the amount homogenising of material.
In addition, under the projection of imprinted pattern and the pit situation that the density on the direction is different in face, disperse with identical spacing by identical amount and place if pattern forms material, it is excessive or not enough then may to occur in the amount that the pattern on the direction forms material in face during the coining manipulation.For example, under the situation that extend on than the big planar dimension of the planar dimension of peripheral region continuously in the recessed zone that a plurality of pits are set therein, need a large amount of patterns to form material and be arranged in the recessed zone.In this case, reduce on recessed zone, to arrange that described pattern forms the spacing of material.
Therefore, introduce the step and the density difference that read about the information of the imprinted pattern of mould before being applied to described substrate and surpass under the situation of predetermined (setting in advance) threshold value described pattern being formed material, promptly, be present under the situation in imprinted pattern zone with very large planar dimension in recessed zone, preferably, reduce the spacing that described pattern forms the layout of material.
Be used for to form the parts that the resin material of material is applied on the described substrate as pattern and be called decollator.When remaining constant value, change the spacing that resin material is arranged, can be reduced in the excessive or not enough degree of the resin material amount in the imprinted pattern zone during the coining manipulation in the resin material amount of discharging from decollator.In the present invention, also can change the applied amount of the resin material self that at every turn applies according to the position of resin material on substrate.More particularly, further preferably, the pattern of same amount forms on each position in described a plurality of positions that material is arranged on the different spacing on the substrate.In addition, pattern can be formed in material is arranged on the different spacing on the described substrate by different amounts described a plurality of positions each.
At least use following manner 1) with 2) with different spacings described pattern is set and forms material.
1) shape by point applies described pattern formation material with different spacings between adjacent 2.
2) the spacing difference between a plurality of zones, each zone wherein is made of a plurality of points.That is, on the first area that constitutes by a plurality of points, pattern is set and forms material, on the second area that constitutes by a plurality of points, pattern is set and forms material with second spacing with first spacing.
Therefore, the present invention also comprises such a case, wherein, when providing above-mentioned pattern to form material by disperse state with different spacings on the direction of a line, provides described pattern to form material with identical spacing between the consecutive point of many adjacent lines.
In a preferred embodiment, when the liquid resin material that forms material as pattern is placed on the substrate, control the position that applies of liquid resin material.Can not once apply under the situation of described resin material with the corresponding planar dimension of size at decollator with the imprinted pattern zone of mould, that controls pattern formation material applies the position for example to move described decollator on first direction of principal axis, places described pattern simultaneously and forms material.
(second embodiment)
The pattern forming device of this embodiment is to be used for realizing the equipment that pattern forms by the pattern formation method of first embodiment.Specifically, the pattern forming device comprises: the mould retaining part is used to keep above-mentioned mould; The substrate retaining part is used to keep aforesaid substrate; And applying portion, be used for that above-mentioned pattern is formed material and be applied to substrate.The details of pattern forming device is more specifically described among the embodiment hereinafter.
As mentioned above, by utilizing such structure, its control pattern form material apply that thereby the position less causes the resin material amount depend on the excessive or not enough of position, when potting resin material between mould and substrate, can strictly control the resin material amount.
In addition, in the above-described embodiments, can adopt based on the relation between the evaporation capacity of the application time of resin material and resin material and regulate the described structure that applies the position.As a result, even use the resin material of evaporation easily, also can control the amount of resin material accurately partly, thereby realize Precision Machining.
In addition, the position that applies by according to mold shape or substrate shape adjusting resin material has the mould of complicated shape or the substrate of distortion even use, and also can control the resin material amount accurately partly, thereby allow Precision Machining.By not have adjusting to be not easy to apply described resin material under the situation of liquid resin material amount of fine adjustments regulating the described position that applies, depend on the excessive or not enough of filling position by controlling, can realize Precision Machining with what can not cause the resin material amount.
Hereinafter the present invention is described based on embodiment.
(embodiment 1)
In embodiment 1, will the structure example that apply the position of resin material in the pattern transfer equipment that the present invention was applied thereon be described.
Fig. 1 illustrates the structure example of pressworking equipment in this embodiment.
As shown in Figure 1, in the pattern transfer equipment of this embodiment, mould 105 and substrate 104 are provided with relative to one another.Mould 105 is made by transparent material, and has required imprinted pattern on the surface of substrate 104.Mould 105 is connected shell 101 by load cell 106 with member.The transparent material that is used for mould 105 can be suitably from quartz, sapphire, TiO 2, select among the SiN etc.The surface towards substrate 104 of mould 105 is subjected to handling (release treatment) with the demoulding of processing such as silane couplent usually.
Display 107 is made of lens combination and CCD (charge-coupled image sensor), and obtains the information about mould 105, substrate 104 and interbody spacer thereof of image format.
On the relative part in the back side with mould 105 of shell 101, UV light source 108 is set.
Substrate 104 is installed on the stand 102 by chuck 103.Stand 102 has the movable direction with respect to six axles (x, y, z, θ, α and β), and attached on the shell 101.
Decollator 109 connects into like this, makes that it can be all staggered relatively with the optional position on the substrate 104.
Control and treatment circuit 127 provides instruction to applying control circuit 120, position detecting circuit 121, exposure control circuit 122, pressure detection circuit 123, pressure control circuit 124, position control circuit 125 and applying position control circuit 126, to handle.In addition, control and treatment circuit 127 receptions are from the output data of foregoing circuit.
Apply the described decollator 109 of control circuit 120 controls, be applied on the described substrate 104 with resin material with light curable.
The image that position detecting circuit 121 Flame Image Process are obtained by display 107 is to calculate the position relation between mould 105 and the substrate 104.
Exposure control circuit 122 control UV light sources 108 are to realize exposure.
Pressure detection circuit 123 calculates the pressure on the interval that acts between mould 105 and the substrate 104 according to the detection signal of load cell 106 and that a part of planar dimension to be processed.
Pressure control circuit 124 control stands 102 make the required pressure of effect on the interval between mould 105 and the substrate 104.
Position control circuit 125 control stands 102 make mould 105 and substrate 104 have the desired position relation betwixt.
Applying position control circuit 126 provides the instruction of relevant controlled quentity controlled variable to applying control circuit 120 and position control circuit 125, with the position that applies of control resin material.
By the way, the layout of each device and pattern are not limited to those described in this embodiment, but also can be revised as other structure.For example, mould 105 can substitute substrate 104 and move.
Next, with the control of describing in this embodiment resin material that applies the position.
Fig. 2 illustrates the evaporation rate of the liquid resin material that is applied and over time.
When with amount of liquid L 2When the resinous wood gob that applies cost t just fills these second, since evaporation, amount of liquid L 2Be reduced to L 1For example, the resin material amount is 200pl when applying.
Fig. 3 (a), Fig. 3 (b), Fig. 4 and Fig. 5 are the synoptic diagram that this embodiment is shown.
In this embodiment, control by the evaporation capacity of the resin material considering to be applied and apply the position.
Fig. 3 (a) is illustrated in the example that the resin material on the right-hand side zone has evaporated, makes the reference surface 301 of mould 105 and the reference surface 302 of substrate 104 be not parallel to each other mutually.Fig. 3 (b) illustrates a kind of like this example, wherein, when in the interval between mould 105 and substrate 104 during the filling liquid resin material, control the position that applies of described liquid resin material, depend on the excessive or not enough of filling position with what can not cause the resin material amount, thereby the reference surface 302 of the reference surface 301 of mould 105 and substrate 104 is parallel to each other.
In this embodiment, for simplicity, consider following situation, wherein carry out applying of liquid resin material like this, each is arranged resinous wood gob 401 with identical amount with embarking on journey, arrange multirow then, each row has constant width w, as shown in Figure 4.
At first, based in the speed of evaporation capacity shown in Figure 2 with from being applied to the equilibrium of filling between time institute's elapsed time, determine when the excessive or not enough necessary amount that depends on filling position that can not cause the resin material amount in the interval between substrate 104 and mould 105 during the potting resin material by applying position control circuit 126, and resin material apply spacing.
For example, in this embodiment, determine to apply the position with the following methods.
From evaporation curve shown in Figure 2 as can be known, be t up to the time representation of filling the k melted resin material 402 that is applied k, the scale of the k melted resin material 402 that is applied in the process of potting resin material is shown V (t k).In addition, the total area of finished surface (planar dimension) is expressed as S, and the average thickness of resin material layer is expressed as d after processing.
In this case, be used to process total amount (volume) V of required resin material AllCan use following formulate:
V all = Sd = Σ k = 1 n V ( t k ) .
According to this formula, determine to satisfy the total n of the resinous wood gob of this formula.If mark is unacceptable words, then by regulating up to the time of filling described resin material.
Next, the assignment area S of k melted resin material 402 kCan be by following formulate:
S k = V ( t k ) d .
As shown in Figure 4, each provisional capital has identical width w, thus the assignment width l of k melted resin material 402 kCan be by following formulate:
l k = S k w = V ( t k ) wd .
According to this formula, the spacing between k melted resin material and the k+1 melted resin material is defined as (l k+ l K+1)/2.
Based on the position of determining thus that applies, applying position control circuit 126 provides instruction to applying control circuit 120 and position control circuit 125, thereby when control applies the position, apply the resinous wood gob of same amount continuously by using decollator 109 and stand 102.
For example, when only noting for 1 when row, as shown in Figure 5, apply the resinous wood gob 401 of same amount continuously to the left side from the right of figure, its spacing that applies the position little by little increases.Therefore, it is 502 shorter than applying spacing to apply spacing 501, and this depends on up to the evaporation capacity of finishing till applying.
In this embodiment, the line width of Xiang Denging also can be along with evaporation capacity changes and changes.In addition, under the situation that resin material applies not according to the shape of parallel row, the applying the position and can determine according to evaporation capacity similarly of resin material.
The amount situation inequality of the resin material that above-mentioned applying method in this embodiment also is applicable on substrate to be applied.
Fig. 6 (a) is the synoptic diagram that the example of the resinous wood gob 601 that applies different amounts is shown with Fig. 6 (b).
Shown in Fig. 6 (a), will consider such a case, the amount that wherein only has the center that applies in the center of substrate 104 to drip increases, this be since for example during filling described resin material bubble less remain in the interval between substrate 104 and the mould 105.
When the resin material shown in 6 (a) apply in the process that control applies the position under the situation of considering evaporation capacity the time, each applies the position and changes, shown in Fig. 6 (b).The order that label 1 to 5 expression in resinous wood gob 601 applies.Carry out applying of resin material under the situation of considering evaporation capacity, each drops in the offset alignment mode (6 (b)) of the direction generation skew of arrow thereby the layout of resinous wood gob is changed into wherein from the symmetric offset spread mode (Fig. 6 (a)) at L-R and top-end.
Next, with the pattern transfer step of describing in this embodiment.
The substrate 104 that resin material applies thereon is relative with mould 105, and substrate 104 and mould 105 mutual extrusion, with potting resin material in the interval between substrate 104 and mould 105.At this moment, detect squeeze pressure by load cell 106, and working pressure testing circuit 123, pressure control circuit 124 and stand 102 these squeeze pressures of control.
Next, the position relation between substrate 104 and the mould 105 is adjusted when observing the position of described substrate 104 and mould 105 by display 107.
Then, use the UV light (light) that sends from UV light source 108 to shine described resin material, to be solidificated in the resin material in the interval between substrate 104 and the mould 105.
At last, substrate 104 and mould 105 are moved away from each other, to remove curing resin material from mould 105.
By above-mentioned procedure of processing, on the resin bed of the surface imprint pattern transfer (impression) of mould 105 to the workpiece 104.
According to this embodiment, even cause the amount of liquid resin material to reduce under the debatable situation in evaporation owing to resin material, in the interval between substrate and mould during the potting resin material, also can according to the amount of necessity come the potting resin material and the resin material amount can not appear and depend on the excessive or not enough of position.Therefore, can carry out Precision Machining.
By the way, be not limited to described in this embodiment device structure about the device structure that applies resin material, but can suitably select.For example, also can use other equipment to carry out applying of resin material.
(embodiment 2)
In embodiment 2, will the structure example that the enforcement resin material different with embodiment 1 applies position control method be described.
Be that with the difference of embodiment 1 described resin material applies the structure of position control method, thereby will only describe this part.
At first, under the situation of the shape of considering mould 105, apply position control circuit 126 and determine, in the interval between substrate 104 and mould 105 during the potting resin material, the resin material of necessary amount apply the position, and can not cause the resin material amount depend on the excessive or not enough of filling position.
Fig. 7 is the synoptic diagram that the structure of this embodiment is shown.
For example, can determine the described position that applies with following manner.
Similar to embodiment 1, for simplicity, will consider to apply continuously the situation of the resinous wood gob of same amount (l).
At first, as shown in Figure 7, whole machining area is divided into n part, each part wherein has identical planar dimension.
Next, for example, in k zone 701, obtain necessary resin material amount U by the shape of the mould in this zone 701 and the desired thickness of resin material layer k
Based on necessary resin material amount U k, the number N of necessary resinous wood gob kCan be by following formulate:
N k = U k l .
Therefore, determine that the resin material in the k zone 701 applies the position.In this case, also can determine that resin material applies the position by k zone 701 further being subdivided into a plurality of parts.
Be used to process required total resin material amount V AllCan be by following formulate:
V all = Σ k = 1 n U k .
Based on the position of determining like this that applies, applying position control circuit 126 provides instruction to applying control circuit 120 and position control circuit 125, thereby uses decollator 109 and stand 102 to apply the resinous wood gob of same amount continuously when control applies the position.In addition, similar to embodiment 1, also can determine that described resin material applies the position based on the assignment area (planar dimension) of the every melted resin material that depends on mold shape.
Fig. 8 (a) and Fig. 8 (b) illustrate the synoptic diagram that applies the situation of resinous wood gob by the shape of row, wherein apply the control of position according to the shape of mould.
Fig. 8 (a) illustrates a kind of like this example, wherein change the density difference that applies the position on substrate 104 by density difference according to the projection of the imprinted pattern of mould 105 or pit, control necessary amount, and can not cause the resin material amount depend on the excessive or not enough of filling position.In zone 801, described projection or pit have big density, thereby correspondingly apply resin material with short spacing.
Fig. 8 (b) illustrates a kind of like this example, wherein by change the density difference that applies the position on substrate 104 according to the height of the projection of the imprinted pattern of mould 105 or pit or the degree of depth, control necessary amount, and can not cause the resin material amount depend on the excessive or not enough of filling position.In zone 802, described projection or pit have the big height or the degree of depth than other zone, thereby correspondingly apply resin material with short spacing.
According to this embodiment, apply on the position under the debatable situation even have complicated shape and the resin material of necessary amount is positioned at each at mould 105, also can realize necessary amount, and can not cause the resin material amount depend on the excessive or not enough of filling position.Therefore, can carry out Precision Machining.By the way, cause each is applied under the problematic situation of the necessary resin material amount of location positioning in strain owing to substrate 104, also can apply the amount that described necessity is realized in the position by control under the situation of the shape of considering substrate 104, and can not cause the resin material amount depend on the excessive or not enough of filling position.Therefore, can carry out Precision Machining.
Fig. 9 is the synoptic diagram that applies the position that is illustrated in resin material when using distortion substrate 104.
In zone 901, the surface of substrate 104 has the shape of spill, thereby, to compare with the number that drips in other zone, the number that drips in this zone has increased.
According to this embodiment, even causing the liquid resin material amount to reduce under the debatable situation owing to evaporating, also can will depend on that the controlled quentity controlled variable of the position of evaporation degree is superimposed upon on the controlled quentity controlled variable that depends on mold shape or substrate shape, controls resin material and applies the position to embodiment 1 similar passing through.Therefore, what can not cause the resin material amount by realizing necessary amount depends on the excessive or not enough of filling position, carries out Precision Machining.
Though with regard to structrual description disclosed herein the present invention,, the present invention is not limited to the details of being set forth, the application should cover this modification or the change in the scope of improved purpose or following claim.

Claims (3)

1. a mould that has an imprinted pattern by use forms the pattern formation method of pattern on substrate, and described pattern formation method comprises:
Preparation has the substrate that pattern forms the zone thereon;
Described pattern on described substrate forms in the zone and disperses liquid curable resin materials by the amount that equates;
Described curable resin materials is deformed into and described imprinted pattern corresponding shape; And
The curable resin materials of distortion is solidified,
Wherein, described curable resin materials be dispersed in be spaced apart from each other and parallel many straight lines on, and be dispersed in succession on each bar in the described straight line with the spacing that increases gradually, and
Wherein, according to the evaporation capacity of described curable resin materials, adjust described spacing.
2. pattern formation method as claimed in claim 1, wherein, according to projection or the degree of depth of pit or the strain of height or described substrate of the imprinted pattern of the projection of the imprinted pattern of described mould or the density difference of pit, described mould, readjust described spacing.
3. pattern formation method as claimed in claim 1 wherein, according to the evaporation capacity of described curable resin materials, is adjusted the line width of described many straight lines.
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Families Citing this family (141)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080160129A1 (en) 2006-05-11 2008-07-03 Molecular Imprints, Inc. Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template
US7179079B2 (en) * 2002-07-08 2007-02-20 Molecular Imprints, Inc. Conforming template for patterning liquids disposed on substrates
JP4935312B2 (en) * 2006-11-15 2012-05-23 凸版印刷株式会社 Imprint mold and imprint mold manufacturing method
US20090014917A1 (en) * 2007-07-10 2009-01-15 Molecular Imprints, Inc. Drop Pattern Generation for Imprint Lithography
JP4908369B2 (en) * 2007-10-02 2012-04-04 株式会社東芝 Imprint method and imprint system
US8119052B2 (en) * 2007-11-02 2012-02-21 Molecular Imprints, Inc. Drop pattern generation for imprint lithography
EP2081192A1 (en) * 2008-01-15 2009-07-22 Sony DADC Austria AG Method of manufacturing an optical data carrier
US20110180781A1 (en) * 2008-06-05 2011-07-28 Soraa, Inc Highly Polarized White Light Source By Combining Blue LED on Semipolar or Nonpolar GaN with Yellow LED on Semipolar or Nonpolar GaN
US20090309127A1 (en) * 2008-06-13 2009-12-17 Soraa, Inc. Selective area epitaxy growth method and structure
US8847249B2 (en) * 2008-06-16 2014-09-30 Soraa, Inc. Solid-state optical device having enhanced indium content in active regions
US8767787B1 (en) 2008-07-14 2014-07-01 Soraa Laser Diode, Inc. Integrated laser diodes with quality facets on GaN substrates
US8805134B1 (en) 2012-02-17 2014-08-12 Soraa Laser Diode, Inc. Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices
US8143148B1 (en) 2008-07-14 2012-03-27 Soraa, Inc. Self-aligned multi-dielectric-layer lift off process for laser diode stripes
US20100015270A1 (en) * 2008-07-15 2010-01-21 Molecular Imprints, Inc. Inner cavity system for nano-imprint lithography
JP5200726B2 (en) * 2008-07-22 2013-06-05 凸版印刷株式会社 Imprint method, pre-imprint mold, pre-imprint mold manufacturing method, imprint apparatus
WO2010017148A1 (en) 2008-08-04 2010-02-11 Soraa, Inc. White light devices using non-polar or semipolar gallium containing materials and phosphors
US8284810B1 (en) 2008-08-04 2012-10-09 Soraa, Inc. Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
JP5361309B2 (en) * 2008-09-25 2013-12-04 キヤノン株式会社 Imprint apparatus and imprint method
JP2010076219A (en) * 2008-09-25 2010-04-08 Canon Inc Method for processing substrate by nanoimprint
US8586126B2 (en) * 2008-10-21 2013-11-19 Molecular Imprints, Inc. Robust optimization to generate drop patterns in imprint lithography which are tolerant of variations in drop volume and drop placement
US8512797B2 (en) * 2008-10-21 2013-08-20 Molecular Imprints, Inc. Drop pattern generation with edge weighting
JP5100609B2 (en) * 2008-10-27 2012-12-19 株式会社東芝 Manufacturing method of semiconductor device
NL2003875A (en) * 2009-02-04 2010-08-05 Asml Netherlands Bv Imprint lithography method and apparatus.
US8247886B1 (en) 2009-03-09 2012-08-21 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
JP4940262B2 (en) * 2009-03-25 2012-05-30 株式会社東芝 Imprint pattern forming method
US8422525B1 (en) 2009-03-28 2013-04-16 Soraa, Inc. Optical device structure using miscut GaN substrates for laser applications
US8299473B1 (en) 2009-04-07 2012-10-30 Soraa, Inc. Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
DE112010001615T5 (en) 2009-04-13 2012-08-02 Soraa, Inc. Structure of an optical element using GaN substrates for laser applications
US8634442B1 (en) 2009-04-13 2014-01-21 Soraa Laser Diode, Inc. Optical device structure using GaN substrates for laser applications
US8837545B2 (en) 2009-04-13 2014-09-16 Soraa Laser Diode, Inc. Optical device structure using GaN substrates and growth structures for laser applications
JP5480530B2 (en) * 2009-04-24 2014-04-23 株式会社日立ハイテクノロジーズ Fine structure transfer method and fine structure transfer apparatus
US8791499B1 (en) 2009-05-27 2014-07-29 Soraa, Inc. GaN containing optical devices and method with ESD stability
US9829780B2 (en) 2009-05-29 2017-11-28 Soraa Laser Diode, Inc. Laser light source for a vehicle
US8509275B1 (en) 2009-05-29 2013-08-13 Soraa, Inc. Gallium nitride based laser dazzling device and method
US8427590B2 (en) 2009-05-29 2013-04-23 Soraa, Inc. Laser based display method and system
US9800017B1 (en) 2009-05-29 2017-10-24 Soraa Laser Diode, Inc. Laser device and method for a vehicle
US9250044B1 (en) 2009-05-29 2016-02-02 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser diode dazzling devices and methods of use
US10108079B2 (en) 2009-05-29 2018-10-23 Soraa Laser Diode, Inc. Laser light source for a vehicle
US8247887B1 (en) 2009-05-29 2012-08-21 Soraa, Inc. Method and surface morphology of non-polar gallium nitride containing substrates
US20110056429A1 (en) * 2009-08-21 2011-03-10 Soraa, Inc. Rapid Growth Method and Structures for Gallium and Nitrogen Containing Ultra-Thin Epitaxial Structures for Devices
US9000466B1 (en) 2010-08-23 2015-04-07 Soraa, Inc. Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening
JP5281989B2 (en) * 2009-08-26 2013-09-04 富士フイルム株式会社 Pattern transfer apparatus and pattern forming method
US8750342B1 (en) 2011-09-09 2014-06-10 Soraa Laser Diode, Inc. Laser diodes with scribe structures
US8355418B2 (en) 2009-09-17 2013-01-15 Soraa, Inc. Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates
WO2011035265A1 (en) 2009-09-18 2011-03-24 Soraa, Inc. Power light emitting diode and method with current density operation
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
US9293644B2 (en) 2009-09-18 2016-03-22 Soraa, Inc. Power light emitting diode and method with uniform current density operation
US20110186887A1 (en) * 2009-09-21 2011-08-04 Soraa, Inc. Reflection Mode Wavelength Conversion Material for Optical Devices Using Non-Polar or Semipolar Gallium Containing Materials
JP4963718B2 (en) * 2009-10-23 2012-06-27 キヤノン株式会社 Imprint method, imprint apparatus, and article manufacturing method using the same
JP5455583B2 (en) * 2009-11-30 2014-03-26 キヤノン株式会社 Imprint device
JP5563319B2 (en) * 2010-01-19 2014-07-30 キヤノン株式会社 Imprint apparatus and article manufacturing method
US20110215348A1 (en) * 2010-02-03 2011-09-08 Soraa, Inc. Reflection Mode Package for Optical Devices Using Gallium and Nitrogen Containing Materials
US20110186874A1 (en) * 2010-02-03 2011-08-04 Soraa, Inc. White Light Apparatus and Method
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8740413B1 (en) 2010-02-03 2014-06-03 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US20110182056A1 (en) * 2010-06-23 2011-07-28 Soraa, Inc. Quantum Dot Wavelength Conversion for Optical Devices Using Nonpolar or Semipolar Gallium Containing Materials
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
JP5351069B2 (en) * 2010-02-08 2013-11-27 株式会社東芝 Imprint method and imprint apparatus
JP5451450B2 (en) * 2010-02-24 2014-03-26 キヤノン株式会社 Imprint apparatus, template thereof, and article manufacturing method
JP5238742B2 (en) * 2010-03-19 2013-07-17 株式会社東芝 Processing method and processing apparatus
US9927611B2 (en) 2010-03-29 2018-03-27 Soraa Laser Diode, Inc. Wearable laser based display method and system
US8451876B1 (en) 2010-05-17 2013-05-28 Soraa, Inc. Method and system for providing bidirectional light sources with broad spectrum
JP5744422B2 (en) 2010-06-17 2015-07-08 キヤノン株式会社 Imprint method, imprint apparatus, sample shot extraction method, and article manufacturing method using the same
US8293551B2 (en) 2010-06-18 2012-10-23 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US9450143B2 (en) 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
JP5214683B2 (en) 2010-08-31 2013-06-19 株式会社東芝 Imprint recipe creating apparatus and method, and imprint apparatus and method
JP5002695B2 (en) * 2010-09-24 2012-08-15 株式会社東芝 Micromachining method, micromachining apparatus, and micromachining program
JP5828626B2 (en) * 2010-10-04 2015-12-09 キヤノン株式会社 Imprint method
US8816319B1 (en) 2010-11-05 2014-08-26 Soraa Laser Diode, Inc. Method of strain engineering and related optical device using a gallium and nitrogen containing active region
US9048170B2 (en) 2010-11-09 2015-06-02 Soraa Laser Diode, Inc. Method of fabricating optical devices using laser treatment
JP2012114157A (en) 2010-11-22 2012-06-14 Toshiba Corp Drop recipe preparation method and database generating method
US9034233B2 (en) * 2010-11-30 2015-05-19 Infineon Technologies Ag Method of processing a substrate
US9318875B1 (en) 2011-01-24 2016-04-19 Soraa Laser Diode, Inc. Color converting element for laser diode
US9595813B2 (en) 2011-01-24 2017-03-14 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a substrate member
US9025635B2 (en) 2011-01-24 2015-05-05 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a support member
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
US9093820B1 (en) 2011-01-25 2015-07-28 Soraa Laser Diode, Inc. Method and structure for laser devices using optical blocking regions
JP5595949B2 (en) 2011-02-15 2014-09-24 株式会社東芝 Imprint apparatus, imprint method, and method of manufacturing uneven plate
US9287684B2 (en) 2011-04-04 2016-03-15 Soraa Laser Diode, Inc. Laser package having multiple emitters with color wheel
US8686431B2 (en) 2011-08-22 2014-04-01 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
US8971370B1 (en) 2011-10-13 2015-03-03 Soraa Laser Diode, Inc. Laser devices using a semipolar plane
US8912025B2 (en) 2011-11-23 2014-12-16 Soraa, Inc. Method for manufacture of bright GaN LEDs using a selective removal process
US9606431B2 (en) * 2011-11-25 2017-03-28 Scivax Corporation Imprinting device and imprinting method
CN103781590B (en) * 2011-12-14 2016-07-06 松下知识产权经营株式会社 The determination methods of the organisation of working in ultraprecise complex machining device and ultraprecise complex machining device
DE112012003796B4 (en) 2011-12-14 2018-03-01 Panasonic Intellectual Property Management Co., Ltd. Machining data generating method for combined ultra-precision machining apparatus and combined ultra-precision machining apparatus
JP5838826B2 (en) * 2012-01-23 2016-01-06 大日本印刷株式会社 Pattern structure manufacturing method, nanoimprint lithography method, and imprint apparatus
CN102591142B (en) * 2012-02-29 2013-03-27 青岛理工大学 Nano-imprinting device and method for patterning sapphire substrate
WO2013134432A1 (en) 2012-03-06 2013-09-12 Soraa, Inc. Light emitting diodes with low refractive index material layers to reduce light guiding effects
US9020003B1 (en) 2012-03-14 2015-04-28 Soraa Laser Diode, Inc. Group III-nitride laser diode grown on a semi-polar orientation of gallium and nitrogen containing substrates
JP5694219B2 (en) * 2012-03-21 2015-04-01 株式会社東芝 Drop position setting program, imprint method, and imprint apparatus
JP5462903B2 (en) 2012-03-23 2014-04-02 株式会社東芝 Droplet arrangement method, pattern formation method, droplet arrangement program, droplet arrangement apparatus, and template pattern design method
US10559939B1 (en) 2012-04-05 2020-02-11 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
US9343871B1 (en) 2012-04-05 2016-05-17 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
US9800016B1 (en) 2012-04-05 2017-10-24 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
US8971368B1 (en) 2012-08-16 2015-03-03 Soraa Laser Diode, Inc. Laser devices having a gallium and nitrogen containing semipolar surface orientation
EP2889895B1 (en) 2012-08-27 2017-11-15 Scivax Corporation Imprint device and imprint method
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
US8802471B1 (en) 2012-12-21 2014-08-12 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
US9166372B1 (en) 2013-06-28 2015-10-20 Soraa Laser Diode, Inc. Gallium nitride containing laser device configured on a patterned substrate
US8994033B2 (en) 2013-07-09 2015-03-31 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
US9379525B2 (en) 2014-02-10 2016-06-28 Soraa Laser Diode, Inc. Manufacturable laser diode
US9368939B2 (en) 2013-10-18 2016-06-14 Soraa Laser Diode, Inc. Manufacturable laser diode formed on C-plane gallium and nitrogen material
US9362715B2 (en) 2014-02-10 2016-06-07 Soraa Laser Diode, Inc Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material
US9520695B2 (en) 2013-10-18 2016-12-13 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser device having confinement region
US9419189B1 (en) 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
US9209596B1 (en) 2014-02-07 2015-12-08 Soraa Laser Diode, Inc. Manufacturing a laser diode device from a plurality of gallium and nitrogen containing substrates
US9871350B2 (en) 2014-02-10 2018-01-16 Soraa Laser Diode, Inc. Manufacturable RGB laser diode source
US9520697B2 (en) 2014-02-10 2016-12-13 Soraa Laser Diode, Inc. Manufacturable multi-emitter laser diode
US9564736B1 (en) 2014-06-26 2017-02-07 Soraa Laser Diode, Inc. Epitaxial growth of p-type cladding regions using nitrogen gas for a gallium and nitrogen containing laser diode
US12126143B2 (en) 2014-11-06 2024-10-22 Kyocera Sld Laser, Inc. Method of manufacture for an ultraviolet emitting optoelectronic device
US9246311B1 (en) 2014-11-06 2016-01-26 Soraa Laser Diode, Inc. Method of manufacture for an ultraviolet laser diode
US9666677B1 (en) 2014-12-23 2017-05-30 Soraa Laser Diode, Inc. Manufacturable thin film gallium and nitrogen containing devices
US9653642B1 (en) 2014-12-23 2017-05-16 Soraa Laser Diode, Inc. Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes
JP6540089B2 (en) * 2015-02-25 2019-07-10 大日本印刷株式会社 Pattern forming method, pattern forming apparatus and program for pattern formation
US10120276B2 (en) * 2015-03-31 2018-11-06 Canon Kabushiki Kaisha Imprint apparatus, imprint method, and method of manufacturing article
US10938182B2 (en) 2015-08-19 2021-03-02 Soraa Laser Diode, Inc. Specialized integrated light source using a laser diode
US11437775B2 (en) 2015-08-19 2022-09-06 Kyocera Sld Laser, Inc. Integrated light source using a laser diode
US10879673B2 (en) 2015-08-19 2020-12-29 Soraa Laser Diode, Inc. Integrated white light source using a laser diode and a phosphor in a surface mount device package
US11437774B2 (en) 2015-08-19 2022-09-06 Kyocera Sld Laser, Inc. High-luminous flux laser-based white light source
JP6732419B2 (en) * 2015-09-02 2020-07-29 キヤノン株式会社 Imprint apparatus, imprint method, and article manufacturing method
US9787963B2 (en) 2015-10-08 2017-10-10 Soraa Laser Diode, Inc. Laser lighting having selective resolution
JP6590667B2 (en) * 2015-11-30 2019-10-16 キヤノン株式会社 Imprint apparatus, imprint method, and article manufacturing method
JP6666039B2 (en) * 2016-03-07 2020-03-13 キヤノン株式会社 Imprint method, imprint apparatus, program, and article manufacturing method
US9993962B2 (en) * 2016-05-23 2018-06-12 Canon Kabushiki Kaisha Method of imprinting to correct for a distortion within an imprint system
US10468247B2 (en) * 2016-12-12 2019-11-05 Canon Kabushiki Kaisha Fluid droplet methodology and apparatus for imprint lithography
US10481491B2 (en) * 2016-12-12 2019-11-19 Canon Kabushiki Kaisha Fluid droplet methodology and apparatus for imprint lithography
US10634993B2 (en) * 2016-12-12 2020-04-28 Canon Kabushiki Kaisha Fluid droplet methodology and apparatus for imprint lithography
JP7100436B2 (en) 2017-09-19 2022-07-13 キヤノン株式会社 Imprint device and article manufacturing method
US10771155B2 (en) 2017-09-28 2020-09-08 Soraa Laser Diode, Inc. Intelligent visible light with a gallium and nitrogen containing laser source
US10222474B1 (en) 2017-12-13 2019-03-05 Soraa Laser Diode, Inc. Lidar systems including a gallium and nitrogen containing laser light source
US10551728B1 (en) 2018-04-10 2020-02-04 Soraa Laser Diode, Inc. Structured phosphors for dynamic lighting
US11421843B2 (en) 2018-12-21 2022-08-23 Kyocera Sld Laser, Inc. Fiber-delivered laser-induced dynamic light system
US11239637B2 (en) 2018-12-21 2022-02-01 Kyocera Sld Laser, Inc. Fiber delivered laser induced white light system
US12000552B2 (en) 2019-01-18 2024-06-04 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system for a vehicle
US11884202B2 (en) 2019-01-18 2024-01-30 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system
US11228158B2 (en) 2019-05-14 2022-01-18 Kyocera Sld Laser, Inc. Manufacturable laser diodes on a large area gallium and nitrogen containing substrate
US10903623B2 (en) 2019-05-14 2021-01-26 Soraa Laser Diode, Inc. Method and structure for manufacturable large area gallium and nitrogen containing substrate
US11422460B2 (en) 2019-12-12 2022-08-23 Canon Kabushiki Kaisha Alignment control in nanoimprint lithography using feedback and feedforward control
US11474441B2 (en) 2020-06-25 2022-10-18 Canon Kabushiki Kaisha Systems and methods for generating drop patterns
CN112959578A (en) * 2021-02-06 2021-06-15 厦门艾维逸新材料有限公司 Metal facing decorative plate and production process thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1455888A (en) * 2000-07-17 2003-11-12 得克萨斯州大学系统董事会 Method and system of automatic fluid dispensing for imprint lithography processes

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03276434A (en) * 1990-03-26 1991-12-06 Tomoegawa Paper Co Ltd Production of substrate for optical information recording medium
US6900881B2 (en) 2002-07-11 2005-05-31 Molecular Imprints, Inc. Step and repeat imprint lithography systems
US6857665B2 (en) 2002-07-24 2005-02-22 Parker-Hannifin Corporation Lockwireless anti-rotation fitting
JP4385631B2 (en) * 2003-04-01 2009-12-16 セイコーエプソン株式会社 Droplet coating method, computer program, organic EL panel manufacturing method, electro-optical panel manufacturing method and electronic device manufacturing method, and droplet coating apparatus, electro-optical panel, electro-optical device and electronic device
KR101193918B1 (en) 2004-06-03 2012-10-29 몰레큘러 임프린츠 인코퍼레이티드 Fluid dispensing and drop-on-demand dispensing for nano-scale menufacturing
US7282550B2 (en) * 2004-08-16 2007-10-16 Molecular Imprints, Inc. Composition to provide a layer with uniform etch characteristics

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1455888A (en) * 2000-07-17 2003-11-12 得克萨斯州大学系统董事会 Method and system of automatic fluid dispensing for imprint lithography processes

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Ki-don Kim et al.Minimization of residual layer thickness by using the optimizeddispensing method in S-FILTM process.Microelectronic Engineering83 4-9.2006,83(4-9),847-850.
Ki-don Kim et al.Minimization of residual layer thickness by using the optimizeddispensing method in S-FILTM process.Microelectronic Engineering83 4-9.2006,83(4-9),847-850. *

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