CN101055882A - GaAs/AlGaAs/InGaAs dual color focal plane detector - Google Patents
GaAs/AlGaAs/InGaAs dual color focal plane detector Download PDFInfo
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- CN101055882A CN101055882A CN 200710040613 CN200710040613A CN101055882A CN 101055882 A CN101055882 A CN 101055882A CN 200710040613 CN200710040613 CN 200710040613 CN 200710040613 A CN200710040613 A CN 200710040613A CN 101055882 A CN101055882 A CN 101055882A
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Abstract
The invention discloses a GaAs/AlGaAs/InGaAs two color quantum trap infrared focal plane detector, which adopts a GaAs-base material, to alternately grow up AlGaAs potential barrier, GaAs quantum trap, AlGaAs potential barrier, InGaAs quantum trap, and AlGaAs potential barrier, using the intersubband transition in GaAs quantum trap to form a survey of long wave band, and using the intersubband transition in InGaAs quantum trap to form a survey of medium wave band. According to the GaAs quantum trap of long wave detection, the AlGaAs/InGaAs/AlGaAs layer forms a potential barrier of GaAs quantum trap; and to the InGaAs quantum trap of medium wave band, the AlGaAs/GaAs/AlGaAs layer has also comprised the potential barrier of InGaAs quantum trap; and the total thickness of the AlGaAs/GaAs/AlGaAs layer and the total thickness of the AlGaAs/InGaAs/AlGaAs layer is made to be a potential barrier thickness in the conventional quantum grap infrared detector, wherein the factor of the decrease of optical coupling efficiency of devices because of the increase of thickness is eliminated. In optical coupling manner, the two-dimension diffraction grating of binary cycle is adopted, and a shallow depth etching method with minor difficulty is adopted in grating etching technics.
Description
Technical field
The present invention relates to the double-colored integrated focal plane array detector of GaAs/AlGaAs/InGaAs, specifically be meant the double-colored integrated quantum trap infra-red focus planar detector of long wave among the n type GaAs/AlGaAs/InGaAs.
Background technology
The present age, nearly all infrared detection technique all was that the direction of multiple-object information develops to obtaining more.If an infra-red thermal imaging system can obtain target information at two or more wave band the while, just can suppress complicated background, raising is to the Effect on Detecting of target, just can be in early warning, reduce false alarm rate in search and the tracking system, improve the performance and the versatility on each weapon platform of device system.In nearest 20 years, along with the fast development of low-dimensional materials, the laboratory research of quantum trap infra-red focus planar detector and business development are very active.Compared with traditional cadmium-telluride-mercury infrared detector, the advantage of quantum well detector is the good uniformity of material, and device making technics maturation, anti-irradiation, cost be low, for quantum well focal plane array detector, these advantages performances more obvious.At present, generally good is that GaAs/AlGaAs Multiple Quantum Well detector has suitable future at long wave band (8～12 μ m) and InGaAs/AlGaAs Multiple Quantum Well detector in medium-wave band (3～5 μ m) application facet.The double-waveband detector focal plane both had been subjected to single band device development level and to the restriction of two wave band thermal imagery system requirements, have again self to be prepared into system applies many-sided difficulties such as (comprising reading circuit) from its device, so the overall development level detector of the same type far below single band.
The structure of long wave double color quantum trap infrared focal plane detector is to adopt two cover single band responsive materials stack combinations in existing, the detector of this structure needs three electrode layers: emitter layer, intermediate electrode layer and collector layer, intermediate electrode layer particularly, effectively the control difficulty is big in the device material growth and in the device technology.
For the double-colored integrated quantum trap infra-red focus planar detector of n type, owing to normal incidence abstinence reason must adopt diffraction grating structure, and the device coupling efficiency that forms by grating can be owing to near-field effect along with leave the grating daylight opening DLO from increase reduce, so in above-mentioned two well structures, can be very low away from the coupling efficiency of the quantum well structure of grating layer.If adopt deep etching to diffraction grating this moment, technology difficulty will improve greatly, and general common process is difficult to accomplish that the laboratory that can do such deep etching at present also only has 2-3 house in the world.
Summary of the invention
The purpose of this invention is to provide the double-colored integrated quantum trap infra-red focus planar detector of long wave among a kind of n type GaAs/AlGaAs/InGaAs that can overcome the shortcoming that exists on the above-mentioned panel detector structure and preparation technology's difficulty.
Technical scheme of the present invention is: adopt the GaAs sill, alternating growth AlGaAs potential barrier/GaAs quantum well/AlGaAs potential barrier/InGaAs quantum well/AlGaAs potential barrier, utilize the detection of the intersubband transitions formation long wave band in the GaAs quantum well, utilize the detection of the intersubband transitions formation medium-wave band in the InGaAs quantum well.To the GaAs quantum well that the long wave in the double-colored integrated quantum well detector focal plane is surveyed, the AlGaAs/InGaAs/AlGaAs layer constitutes the potential barrier of GaAs quantum well; InGaAs quantum well to the medium wave detection, the AlGaAs/GaAs/AlGaAs layer has constituted the potential barrier of InGaAs quantum well again, and the gross thickness that makes the gross thickness of AlGaAs/InGaAs/AlGaAs layer and AlGaAs/GaAs/AlGaAs layer is a potential barrier thickness in the conventional quantum trap infrared detector, to reach dark current with conventional quantum trap infrared detector consistent level, double-colored integrated quantum well devices gross thickness of the present invention does not so increase, and has removed because the thickness increase makes the factor that the photoelectricity coupling efficiency of device descends.In the photoelectricity coupled modes, adopt the two-dimensional and double-cycle diffraction grating of optimizing, in the grating etching technics, adopt the less shallow deep etching method of difficulty.
Device of the present invention comprises: the GaAs substrate is equipped with the Multiple Quantum Well epitaxial film, photosensitive first array that the device chip preparation technology by routine forms on epitaxial film on the GaAs substrate;
Said Multiple Quantum Well epitaxial film is successively grown successively by molecular beam epitaxy or Organometallic Chemistry gas deposition:
The GaAs lower electrode layer that the n type mixes;
The multiple quantum well layer in 10 cycles;
Al
xGa
1-xAs barrier layer, wherein x=0.23～0.27;
The GaAs upper electrode layer that the n type mixes;
The multiple quantum well layer in 10 cycles wherein, each cycle is followed successively by the thick Al of 45～55nm
xGa
1-xThe As barrier layer, the GaAs quantum well layer that 4.5～5.5nm is thick, the Al that 45～55nm is thick
xGa
1-xThe As barrier layer, the In that 2.5～3.5nm is thick
yGa
1-yThe As quantum well layer;
Component: x=0.23～0.27, y=0.28～0.32;
The doping content of quantum well layer is 2.0～3.0 * 10
17Cm
-3
Be equipped with the response medium wave of the cross arrangement that forms by etching and the two-dimensional diffraction gratings of long wave on photosensitive first array, constitute the photosensitive unit of response medium wave and the photosensitive unit of response long wave of cross arrangement therefrom.
Said two-dimensional diffraction gratings, the cycle of long wave diffraction grating is 2.0 μ m～3.0 μ m, and corresponding etching depth is 0.50～0.73 μ m, and duty ratio is 1/2; The cycle of medium wave diffraction grating is 1.25～1.45 μ m, and corresponding etching depth 1 is 0.30～0.36 μ m, and duty ratio is 1/2.
Device of the present invention based on operation principle be:
Behind the infrared light process long wave optical grating diffraction of vertical incidence, incident light is the LONG WAVE INFRARED radiation, generation has formed incident photon with the electronics coupled in the GaAs quantum well thus perpendicular to the effective electric field component of the material direction of growth, forms the photo-generated carrier of long wave band; Behind the infrared light process medium wave optical grating diffraction of vertical incidence, incident light is the medium wave infrared radiation, and incident photon forms the photo-generated carrier of medium-wave band mainly with the electronic action of InGaAs quantum well.Electronics is energized into continuous state from ground state, under unified extra electric field, and the photo-signal that formation can be read out.
Device of the present invention has following feature and advantage:
1. the double-colored integrated quantum well detector of traditional structure needs three electrode layers: emitter layer (upper electrode layer), intermediate electrode layer and collector layer (lower electrode layer), intermediate electrode layer particularly, effectively the control difficulty is big in the device material growth and in the device technology, and the material structure of double-colored integrated quantum trap infrared detector of the present invention is fairly simple, do not need the intermediate electrode layer in the traditional structure, thereby make monochromatic quantum well devices technology can directly apply to double color quantum trap detector of the present invention.
2. by quantum mechanics and quantum limitation effect as can be known, for the GaAs quantum well that the long wave in the double-colored integrated quantum well of the present invention is surveyed, the AlGaAs/InGaAs/AlGaAs layer constitutes the potential barrier of GaAs quantum well; InGaAs quantum well to the medium wave detection, the AlGaAs/GaAs/AlGaAs layer constitutes the potential barrier of InGaAs quantum well again, want the dark current of suppression device for this reason, as long as allow the gross thickness of the gross thickness of AlGaAs/InGaAs/AlGaAs layer and AlGaAs/GaAs/AlGaAs layer be a potential barrier thickness in the conventional quantum trap infrared detector, its gross thickness of double-colored integrated quantum well detector that long wave in the double-colored integrated quantum well of the present invention is like this surveyed relative traditional structure does not increase, and the reason that makes the photoelectricity coupling efficiency of device descend owing to the thickness factor has not existed.
3. the double-colored detection of device gets final product at medium wave and the long wave grating of etching different cycles and the degree of depth in photosensitive unit, need not to do the very big deep etching of technology difficulty in the grating etching.
4. in the concrete use of device, for certain detecting band, the middle long wave double color quantum trap detector of traditional structure need be regulated outer operating circuit to obtain best output signal, and when detecting band changed, its outer operating circuit need readjust; Double-colored integrated quantum trap infrared detector of the present invention only need apply a kind of bias voltage, and outer operating circuit does not need to regulate repeatedly.
5. the resistance difference of the photosensitive unit of two kinds of quantum well structures of the double-colored integrated quantum well detector of tradition is very big, and reading circuit has been proposed very big difficulty.There is not the problem of photosensitive first resistance difference in double-colored integrated quantum trap infrared detector of the present invention, and the requirement of reading circuit is greatly more reduced.The reduction that reading circuit requires will greatly improve the competitiveness of the middle double-colored integrated quantum trap infrared detector of long wave of the present invention.
Description of drawings
Fig. 1 is the conduction band band structure schematic diagram of double color quantum trap focus planardetector under certain bias voltage of traditional structure.
Fig. 2 is the conduction band band structure schematic diagram of double color quantum trap focus planardetector of the present invention under certain bias voltage.
Fig. 3 is the quick first cross-sectional view of the monochromatic light in the double color quantum trap focus planardetector of the present invention, and a figure is the unit section structural representation of response long wave, and b figure is the unit section structural representation of response medium wave.
Fig. 4 is the planar structure schematic diagram of double color quantum trap focus planardetector of the present invention.
The optogalvanic spectra that Fig. 5 is a double color quantum trap infrared focal plane detector of the present invention under 77K working temperature and 2 volts of bias voltages.
Embodiment
Be example with near the double-colored integrated quantum trap infra-red focus planar detector of the long wave infrared region of peak detection wavelength near medium wave infrared band the 4.5 μ m and 9.3 μ m below, in conjunction with the accompanying drawings the specific embodiment of the present invention be described in further detail.
At first, successively grow successively by molecular beam epitaxy or Organometallic Chemistry gas deposition on GaAs substrate 1: the n type mixes, and doping content is 2.5 * 10
17Cm
-3GaAs lower electrode layer 2; The multiple quantum well layer 3 in 10 cycles; The Al of 50nm
xGa
1-xAs (x=0.25) barrier layer 4; The GaAs that the n type mixes, doping content 2.5 * 10
17Cm
-3Upper electrode layer 5;
The multiple quantum well layer 3 in said 10 cycles, each cycle comprises the Al of 1 50nm
xGa
1-xThe Al of 302, one 50nm of GaAs quantum well layer of 301,1 5nm of As (x=0.25) barrier layer
xGa
1-xThe In of 303,1 3.0nm of As (x=0.25) barrier layer
yGa
1-yAs (y=0.3) quantum well layer 304.The doping content of quantum well layer is 2.5 * 10
17Cm
-3
Then, semiconductor device fabrication processes by routine forms photosensitive first array on the Multiple Quantum Well epitaxial film, form the response medium wave of cross arrangement and the two-dimensional diffraction gratings of long wave by etching again, constitute the photosensitive unit 6 of response medium wave and the photosensitive unit 7 of response long wave of cross arrangement therefrom.
Diffraction grating 601 its width in the photosensitive unit 6 of response medium wave are 1.37 μ m, and corresponding etching depth is 0.34 μ m, and duty ratio is 1/2; Diffraction grating 701 its width in the photosensitive unit of response long wave are 2.83 μ m, and corresponding etching depth is 0.7 μ m, and duty ratio is 1/2.
Device is concrete at first to be reduced to 77K with the device working temperature in using, and regulates operating voltage to 2 volt.
Claims (3)
1. a GaAs/AlGaAs/InGaAs double color focus plane detector comprises GaAs substrate (1), is equipped with the Multiple Quantum Well epitaxial film on the GaAs substrate, photosensitive first array that the device chip preparation technology by routine forms on epitaxial film; It is characterized in that:
Be equipped with the response medium wave of the cross arrangement that forms by etching and the two-dimensional diffraction gratings of long wave on said photosensitive first array, constitute the photosensitive unit of response medium wave (6) and the response photosensitive unit of long wave (7) of cross arrangement therefrom.
2. according to a kind of GaAs/AlGaAs/InGaAs double color focus plane detector of claim 1, it is characterized in that: said Multiple Quantum Well epitaxial film is successively grown successively by molecular beam epitaxy or Organometallic Chemistry gas deposition:
The GaAs lower electrode layer (2) that the n type mixes;
The multiple quantum well layer in 10 cycles (3);
Al
xGa
1-xAs barrier layer (4), wherein x=0.23～0.27;
The GaAs upper electrode layer (5) that the n type mixes;
The multiple quantum well layer in 10 cycles wherein, each cycle is followed successively by the thick Al of 45～55nm
xGa
1-xAs barrier layer (301), the GaAs quantum well layer (302) that 4.5～5.5nm is thick, the Al that 45～55nm is thick
xGa
1-xAs barrier layer (303), the In that 2.5～3.5nm is thick
yGa
1-yAs quantum well layer (304);
Component: x=0.23～0.27, y=0.28～0.32;
The doping content of quantum well layer is 2.0～3.0 * 10
17Cm
-3
3. according to a kind of GaAs/AlGaAs/InGaAs double color focus plane detector of claim 1, it is characterized in that: said two-dimensional diffraction gratings, the cycle of long wave diffraction grating (601) is 2.0 μ m～3.0 μ m, and corresponding etching depth is 0.50～0.73 μ m, and duty ratio is 1/2; The cycle of medium wave diffraction grating (602) is 1.25～1.45 μ m, and corresponding etching depth 1 is 0.30～0.36 μ m, and duty ratio is 1/2.
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| CNB2007100406138A CN100524841C (en) | 2007-05-14 | 2007-05-14 | GaAs/AlGaAs/InGaAs dual color focal plane detector |
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|---|---|---|---|
| CNB2007100406138A CN100524841C (en) | 2007-05-14 | 2007-05-14 | GaAs/AlGaAs/InGaAs dual color focal plane detector |
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| CN100524841C CN100524841C (en) | 2009-08-05 |
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Cited By (12)
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| CN102185002A (en) * | 2011-04-01 | 2011-09-14 | 中国科学院苏州纳米技术与纳米仿生研究所 | Plasmon-enhancement-based quantum well infrared detector and preparation method thereof |
| CN103077995A (en) * | 2013-01-15 | 2013-05-01 | 中国科学院上海微系统与信息技术研究所 | InGaAs detector capable of reducing dark current by using electron blocking layer and preparation method of InGaAs detector |
| CN105008969A (en) * | 2013-03-05 | 2015-10-28 | 拉姆伯斯公司 | Phase gratings with odd symmetry for high-resoultion lensless optical sensing |
| CN105720130A (en) * | 2015-07-10 | 2016-06-29 | 中国科学院物理研究所 | Photoelectric detector based on quantum well inter-band |
| CN105870219A (en) * | 2016-06-02 | 2016-08-17 | 中国科学院半导体研究所 | Surface-plasma-reinforced quantum well infrared detector and preparation method thereof |
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| US20050082520A1 (en) * | 2003-10-06 | 2005-04-21 | Fathimulla Ayub M. | Monolithic two color quantum-well photodetector |
| CN100442545C (en) * | 2005-06-24 | 2008-12-10 | 华东师范大学 | Method for preparing focal plane of quantum trap infrared detecter |
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| CN103077995A (en) * | 2013-01-15 | 2013-05-01 | 中国科学院上海微系统与信息技术研究所 | InGaAs detector capable of reducing dark current by using electron blocking layer and preparation method of InGaAs detector |
| CN103077995B (en) * | 2013-01-15 | 2015-08-19 | 中国科学院上海微系统与信息技术研究所 | Electronic barrier layer is utilized to reduce InGaAs detector and the preparation of dark current |
| CN105008969A (en) * | 2013-03-05 | 2015-10-28 | 拉姆伯斯公司 | Phase gratings with odd symmetry for high-resoultion lensless optical sensing |
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| CN105720130A (en) * | 2015-07-10 | 2016-06-29 | 中国科学院物理研究所 | Photoelectric detector based on quantum well inter-band |
| CN105870219A (en) * | 2016-06-02 | 2016-08-17 | 中国科学院半导体研究所 | Surface-plasma-reinforced quantum well infrared detector and preparation method thereof |
| CN107665931A (en) * | 2017-08-30 | 2018-02-06 | 中国科学院上海技术物理研究所 | A kind of integrated enhancing quantum trap infrared detector of guide mode resonance and design method |
| CN109713077B (en) * | 2018-12-01 | 2020-05-15 | 王星河 | Semiconductor detector with multiple response wave bands |
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