CN101000975A - Antenna substrate of high dielectric coefficient and its antenna - Google Patents
Antenna substrate of high dielectric coefficient and its antenna Download PDFInfo
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- CN101000975A CN101000975A CN 200610000269 CN200610000269A CN101000975A CN 101000975 A CN101000975 A CN 101000975A CN 200610000269 CN200610000269 CN 200610000269 CN 200610000269 A CN200610000269 A CN 200610000269A CN 101000975 A CN101000975 A CN 101000975A
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Abstract
The invention discloses an antenna substrate with high dielectric coefficient, including a first and a second dielectric layer. The first dielectric layer has a first dielectric coefficient, the second layer forms on one side of the first layer with a second dielectric coefficient, and the second dielectric coefficient is lower than the first one. In addition, the optional first and second metal layer form on the same side or both sides of the first dielectric layer to form a capacitor.
Description
Technical field
The present invention relates to a kind of organic substrate antenna, particularly relate to a kind of organic substrate antenna of high-dielectric coefficient.
Background technology
Wireless communication technology is to finish by irradiation of electromagnetic waves.Electromagnetic generation is the change procedure in electric field and magnetic field basically, and energy is transmitted in the space in the mode of ripple.And the existence of antenna provides the environment of electric field change, and its how much external forms have determined the space that electric field may vibrate, and the material that generally speaking can produce antenna effect is mostly based on metal.
Because the fast development of wireless communication technology and semiconductor manufacturing in recent years makes radio communication become the essential of life.Simultaneously, brought up the flourish of global communications market.Wireless communication system is made up of transmitter/receiver and antenna, and wherein antenna is responsible for the conversion of electromagnetic energy in circuit and the air, is basic outfit indispensable in the communication system.All circles' focusing on downsizing, simplify the structure and multifrequency or broadband in recent years for Antenna Design.
In the relevant circuit design of antenna, rely on the coupling that passive components such as electric capacity or inductance carry out antenna sometimes.Yet along with the compact trend of electronic product, the design of the part in the electronic product also will be towards this trend development.
No. 5541399 disclosed antenna structure of patent of the U.S. for example, for the coupling capacitance of utilizing helical structure reaching the antenna of multifrequency resonance, and be provided with one in addition and disperse (discrete) electric capacity to come match circuit.But being provided with of decentralized capacitance can increase cost, and its capacitive coupling amount of coil of general substrate is limited.
No. 6885341 disclosed antenna structure of patent of the U.S. utilizes ferromagnetic material to increase the antenna benefit, and the surface that adds dispersion is being pasted assembly and carried out Circuit Matching, but its ferromagnetic imbedding can increase cost of manufacture.
In the traditional antenna design, place because electric capacity is outside, so will inevitably increase assembly cost and material cost.Therefore, if can be with the passive component on the antenna, electric capacity etc. for example combines the elasticity in the time of just can improving Antenna Design with other form with antenna.In addition, multifrequency or broadband also are present antenna major technology developing direction.
Summary of the invention
The object of the present invention is to provide a kind of antenna substrate and antenna thereof of high-dielectric coefficient, solve existing problem in the known technology.
To achieve these goals, the invention provides a kind of antenna substrate of high-dielectric coefficient, include: one first dielectric layer and one second dielectric layer.Wherein first dielectric layer has one first dielectric coefficient; Second dielectric layer is formed at a side of first dielectric layer, has one second dielectric coefficient, and wherein second dielectric coefficient is lower than first dielectric coefficient.
According to one embodiment of the invention, wherein, also include a substrate, be formed at the opposite side of first dielectric layer.
Antenna substrate according to the disclosed high-dielectric coefficient of one embodiment of the invention includes: two first dielectric layers and two second dielectric layers; Wherein a side of two first dielectric layers is in contact with one another, and has one first dielectric coefficient respectively; Two second dielectric layers are formed at the opposite side of first dielectric layer respectively, have one second dielectric coefficient, and wherein second dielectric coefficient is lower than first dielectric coefficient.According to one embodiment of the invention, also include a substrate, be formed between two first dielectric layers.
Antenna substrate according to the disclosed high-dielectric coefficient of one embodiment of the invention includes: one first dielectric layer, a first metal layer and one second metal level and one second dielectric layer; Wherein first dielectric layer has one first dielectric coefficient; The first metal layer and second metal level are formed at the both sides of first dielectric layer respectively, to form an electric capacity; Second dielectric layer is formed at a side of the first metal layer, has one second dielectric coefficient, and wherein second dielectric coefficient is lower than first dielectric coefficient.According to one embodiment of the invention, also include a substrate, be formed at the opposite side of second metal level.
Antenna substrate according to the disclosed high-dielectric coefficient of one embodiment of the invention includes: one first dielectric layer has one first dielectric coefficient; One the first metal layer and one second metal level are formed at the same side of first dielectric layer, to form an electric capacity; Second dielectric layer is formed at a side of the first metal layer, has one second dielectric coefficient, and wherein second dielectric coefficient is lower than first dielectric coefficient.According to one embodiment of the invention, also include a substrate, be formed at the opposite side of second metal level.
Antenna substrate according to the disclosed high-dielectric coefficient of one embodiment of the invention includes: two first dielectric layers, two the first metal layers and two second metal levels, two second dielectric layers and a substrate; Wherein a side of two first dielectric layers is in contact with one another, and has one first dielectric coefficient respectively; One of them is formed at one of them both sides of first dielectric layer the first metal layer one of them and second metal level, form an electric capacity, wherein another of the first metal layer another and second metal level wherein is formed at first dielectric layer another volume both sides wherein, forms an electric capacity; Two second dielectric layers are formed at the opposite side of second metal level respectively, have one second dielectric coefficient, and wherein second dielectric coefficient is lower than the first dielectric coefficient substrate, are formed between two first dielectric layers.
According to one embodiment of the invention, antenna is arranged at a side that does not contact with first dielectric layer of second dielectric layer.
According to embodiments of the invention, by the use of high-k material, can dwindle antenna area, save material cost and reduce assembly cost.
According to embodiments of the invention, electric capacity is built in the substrate, because built-in electric capacity can design more kinds of any capacitances, so antenna structure no longer is confined to use chip capacity, makes design have more elasticity.
According to embodiments of the invention, the high-dielectric coefficient substrate can also dwindle microwave radiation wavelength, reaches the purpose of antenna miniaturization.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Description of drawings
Fig. 1 is the structural representation of first embodiment of the antenna substrate of high-dielectric coefficient of the present invention;
Fig. 2 is the structural representation of second embodiment of the antenna substrate of high-dielectric coefficient of the present invention;
Fig. 3 is the structural representation of the 3rd embodiment of the antenna substrate of high-dielectric coefficient of the present invention;
Fig. 4 is the structural representation of the 4th embodiment of the antenna substrate of high-dielectric coefficient of the present invention;
Fig. 5 is the structural representation of the 5th embodiment of the antenna substrate of high-dielectric coefficient of the present invention;
Fig. 6 is the structural representation of the 6th embodiment of the antenna substrate of high-dielectric coefficient of the present invention;
Fig. 7 is the structural representation of the 7th embodiment of the antenna substrate of high-dielectric coefficient of the present invention;
Fig. 8 is the structural representation of the 8th embodiment of the antenna substrate of high-dielectric coefficient of the present invention;
Fig. 9 is the structural representation of the 9th embodiment of the antenna substrate of high-dielectric coefficient of the present invention;
Figure 10 is the structural representation of the tenth embodiment of the antenna substrate of high-dielectric coefficient of the present invention;
Figure 11 A to 11B is the structural representation of the 11 embodiment of the antenna substrate of high-dielectric coefficient of the present invention;
Figure 12 is the structural representation of the 12 embodiment of the antenna substrate of high-dielectric coefficient of the present invention;
Figure 13 A to 13B is the structural representation of the 13 embodiment of the antenna substrate of high-dielectric coefficient of the present invention;
Figure 14 is the structural representation of the 14 embodiment of the antenna substrate of high-dielectric coefficient of the present invention;
Figure 15 A to 15B figure is the structural representation of the 15 embodiment of the antenna substrate of high-dielectric coefficient of the present invention;
Figure 16 is the structural representation of the 16 embodiment of the antenna substrate of high-dielectric coefficient of the present invention;
Figure 17 is the structural representation of the 17 embodiment of the antenna substrate of high-dielectric coefficient of the present invention;
Figure 18 is the structural representation of the 18 embodiment of the antenna substrate of high-dielectric coefficient of the present invention;
Figure 19 is the structural representation of the 19 embodiment of the antenna substrate of high-dielectric coefficient of the present invention;
Figure 20 is the structural representation of the 20 embodiment of the antenna substrate of high-dielectric coefficient of the present invention;
Figure 21 is the structural representation of the 21 embodiment of the antenna substrate of high-dielectric coefficient of the present invention;
Figure 22 is the structural representation of the 22 embodiment of the antenna substrate of high-dielectric coefficient of the present invention.
Wherein, Reference numeral:
11,12,13,14,15,16,17,18 first dielectric layers
21,22,23,24,25,26,27,28 second dielectric layers
32,34,36,37 substrates
41,43,45,47 the first metal layers
411,451,471 the first metal layers
42,44,46,48 second metal levels
421,461,481 second metal levels
51,53,55,57 antennas
511,551,571 antennas
52,54,56,58 perforations
521,561,581 perforations
61,63,65,67 the first metal layers
62,64,66,68 second metal levels
71 to 86 inductance
Embodiment
Fig. 1 is the structural representation of first embodiment of the antenna substrate of high-dielectric coefficient disclosed in this invention.As shown in the figure, this antenna substrate is combined into a composite base plate by one first dielectric layer 11 and one second dielectric layer 21.Wherein first dielectric layer 11 is a kind of high-k material, has one first dielectric coefficient.Second dielectric layer 21 is formed at a side of first dielectric layer 11, has one second dielectric coefficient, and wherein second dielectric coefficient of second dielectric layer 21 is lower than first dielectric coefficient of first dielectric layer 11.
Please refer to Fig. 2, be the structural representation of second embodiment of the antenna substrate of high-dielectric coefficient disclosed in this invention.As shown in the figure, this antenna substrate is combined into a composite base plate by one first dielectric layer 12 and one second dielectric layer 22, and wherein first dielectric layer 12 is identical with first embodiment with composition with the structure of second dielectric layer 22.In addition, also include a substrate 32, be formed at the opposite side of first dielectric layer 12.Substrate 32 can be an organic substrate, for example glass fibre substrate (FR4 substrate).Wherein first dielectric layer 12 is a kind of high-k material, has one first dielectric coefficient.Second dielectric layer 22 has one second dielectric coefficient, and wherein second dielectric coefficient of second dielectric layer 22 is lower than first dielectric coefficient of first dielectric layer 12.
Please refer to Fig. 3, be the structural representation of the 3rd embodiment of the antenna substrate of high-dielectric coefficient disclosed in this invention.As shown in the figure, this antenna substrate is combined into a composite base plate by two first dielectric layers 13 and two second dielectric layers 23.Wherein first dielectric layer 13 is a kind of high-k material, and a side of two first dielectric layer 13 each first dielectric layer 13 is in contact with one another and coincides, and has one first dielectric coefficient respectively.Two second dielectric layers 23 are formed at the opposite side of this first dielectric layer respectively, have one second dielectric coefficient, and wherein second dielectric coefficient is lower than first dielectric coefficient.
Please refer to Fig. 4, be the structural representation of the 4th embodiment of the antenna substrate of high-dielectric coefficient disclosed in this invention.As shown in the figure, this antenna substrate is combined into a composite base plate by two first dielectric layers 14 and two second dielectric layers 24.Wherein first dielectric layer 14 is identical with the 3rd embodiment with composition with the structure of second dielectric layer 24.In addition, also include a substrate 34, be formed between two first dielectric layers 14.Substrate 34 can be an organic substrate, for example glass fibre substrate (FR4 substrate).Wherein first dielectric layer 14 is a kind of high-k material, has one first dielectric coefficient.Second dielectric layer 24 has one second dielectric coefficient, and wherein second dielectric coefficient of second dielectric layer 24 is lower than first dielectric coefficient of first dielectric layer 14.
In above-mentioned first to fourth embodiment that mentions, adopt high-k material as one of composition material of antenna substrate, therefore, can reduce the size of antenna when this substrate is used for designing antenna, and dwindle emission band.In above-mentioned first to fourth embodiment that mentions, the antenna (not shown) be arranged at second dielectric layer a side.With first embodiment, antenna is arranged at a side that does not contact with first dielectric layer 11 of second dielectric layer 21.
In order to increase the radiation frequency range of antenna, capacitance structure can be built in above-mentioned first to fourth embodiment that mentions, please refer to Fig. 5 to Fig. 7.
Fig. 5 is the structural representation of the 5th embodiment of the antenna substrate of high-dielectric coefficient disclosed in this invention.As shown in the figure, this antenna substrate is combined into a composite base plate by one first dielectric layer 15, one second dielectric layer 25, a first metal layer 41 and one second metal level 42.Wherein first dielectric layer 15 is a kind of high-k material, has one first dielectric coefficient.Second dielectric layer 25 is formed at a side of the first metal layer 41, has one second dielectric coefficient, and wherein second dielectric coefficient of second dielectric layer 25 is lower than first dielectric coefficient of first dielectric layer 15.The first metal layer 41 and second metal level 42 are formed at the both sides of first dielectric layer respectively, to form an electric capacity.In this figure, the first metal layer 41 and second metal level 42 cover whole base plate haply, and in another embodiment, can be according to actual required capacitance, the design the first metal layer 41 and second metal level 42 might not cover whole base plate.
When the 5th embodiment shown in Figure 5 was used for Antenna Design, antenna 51 was arranged at the opposite side of second dielectric layer 25, was connected with the first metal layer 41 by perforation 52.
Please refer to Fig. 6, be the structural representation of the 6th embodiment of the antenna substrate of high-dielectric coefficient disclosed in this invention.As shown in the figure, this antenna substrate is combined into a composite base plate by one first dielectric layer 16, one second dielectric layer 26, a first metal layer 43 and one second metal level 44 and a substrate 36.The structure of one first dielectric layer 16, one second dielectric layer 26, a first metal layer 43 and one second metal level 44 with form identical with the 5th embodiment.Substrate 36 is formed at the opposite side of the first metal layer 43.Substrate 36 can be an organic substrate, for example glass fibre substrate (FR4 substrate).Wherein first dielectric layer 16 is a kind of high-k material, has one first dielectric coefficient.Second dielectric layer 26 has one second dielectric coefficient, and wherein second dielectric coefficient of second dielectric layer 26 is lower than first dielectric coefficient of first dielectric layer 16.
When the 6th embodiment shown in Figure 6 was used for Antenna Design, antenna structure 53 was arranged at the opposite side of second dielectric layer 26, was connected with second metal level 44 by perforation 54.
Please refer to Fig. 7, be the structural representation of the 7th embodiment of the antenna substrate of high-dielectric coefficient disclosed in this invention.As shown in the figure, this antenna substrate is by 45,47, two second metal levels 46,48 of 27,28, two the first metal layers of 17,18, two second dielectric layers of two first dielectric layers, and a substrate 37 is combined into a composite base plate.The first metal layer 45 and second metal level 46 are arranged at the both sides of first dielectric layer 17, and the first metal layer 47 and second metal level 48 are arranged at the both sides of first dielectric layer 18.Wherein first dielectric layer 17,18 is identical with the 4th embodiment with composition with the structure of second dielectric layer 27,28.In addition, also include a substrate 37, be formed between first dielectric layer 17,18.Substrate 37 can be an organic substrate, for example glass fibre substrate (FR4 substrate).Wherein first dielectric layer 17,18 is a kind of high-k material, has one first dielectric coefficient. Second dielectric layer 27,28 has one second dielectric coefficient, and wherein second dielectric coefficient of second dielectric layer 27,28 is lower than first dielectric coefficient of first dielectric layer 17,18.
When the 7th embodiment shown in Figure 7 is used for Antenna Design, antenna structure 55,57 is arranged at the opposite side of second dielectric layer 27,28 respectively, antenna structure 55 is connected with second metal level 46 by perforation 56, and antenna structure 57 is connected with second metal level 48 by perforation 58.
In the described embodiment of Fig. 5 to Fig. 7, the first metal layer and second metal level are arranged at the both sides of first dielectric layer respectively.In another embodiment, the first metal layer and second metal level are arranged at the same side of first dielectric layer respectively, and to form electric capacity, the form of this electric capacity can be fourchette type or comb capacitance.The 8th embodiment to the ten embodiment as shown in Fig. 8 to Figure 10, the first metal layer 61 and second metal level 62, the first metal layer 63 and second metal level 64, the first metal layer 65 and second metal level 66, the first metal layer 67 and second metal level 68 are arranged at the same side of first dielectric layer respectively.Similarly, with reference to figure 9, substrate 36 is formed at the opposite side of first dielectric layer 16.Substrate 36 can be an organic substrate, for example glass fibre substrate (FR4 substrate).
Please refer to Figure 11 A, be the 11 embodiment disclosed in this invention, it is corresponding to the 5th embodiment shown in Figure 5, one inductance 71 optionally is in series with the first metal layer 41 and second metal level, 42 formed electric capacity, inductance 71 joins with the first metal layer 41 in the 11 embodiment, and in the 12 embodiment shown in Figure 12, the inductance 72 and second metal level 42 join.Though inductance 71 joins with the first metal layer 41 here, in another embodiment, inductance 71 or inductance 72 also can join with antenna 51, shown in Figure 11 B.
Please refer to Figure 13 A, be the 13 embodiment disclosed in this invention, it is corresponding to the 6th embodiment shown in Figure 6, one inductance 73 optionally is in series with the first metal layer 43 and second metal level, 44 formed electric capacity, inductance 73 joins with the first metal layer 43 in the 13 embodiment, and in the 14 embodiment shown in Figure 14, the inductance 74 and second metal level 44 join.Though inductance 73 joins with the first metal layer 43 here, in another embodiment, inductance 73 or inductance 74 also can join with antenna, shown in Figure 13 B.
Please refer to Figure 15 A, be the 15 embodiment disclosed in this invention, it is corresponding to the 7th embodiment shown in Figure 7, one inductance 75,76 optionally is in series with the first metal layer 45,47 and second metal level, 46,48 formed electric capacity, inductance 75 joins with the first metal layer 45 in the 15 embodiment, and inductance 76 joins with the first metal layer 47, and in the 16 embodiment shown in Figure 16, the inductance 77 and second metal level 46 join, and the inductance 78 and second metal level 48 join.Inductance 75,76 might not dispose simultaneously in Figure 15 A, and visual circuit needs optionally configuration, and same rule is applicable among the embodiment shown in Figure 16.In another embodiment, also can dispose inductance 75 and inductance 77 or inductance 75 and inductance 78 simultaneously, also adjustable inductance 76 and inductance 77 or inductance 76 and inductance 78, complete visual circuit needs and arranges in pairs or groups.Though inductance 75 joins with the first metal layer 45 here, inductance 76 joins with the first metal layer 47, and in another embodiment, inductance 75 can also join with antenna 55, and inductance 76 joins with antenna 57, shown in Figure 15 B.
Fig. 8 is to embodiment shown in Figure 10, the first metal layer 61 and second metal level 62 be series inductance 79 optionally equally also, the first metal layer 63 and second metal level 64, the first metal layer 65 and second metal level 66 be series inductance 80 optionally equally also, the first metal layer 67 and second metal level 68 be series inductance 81 optionally equally also, with reference to Figure 17 to the 17 embodiment to the 19 embodiment shown in Figure 19.
Please refer to Figure 20, be the 20 embodiment disclosed in this invention, it is corresponding to the 7th embodiment shown in Figure 7, one inductance 83 optionally is in parallel with the first metal layer 411 and second metal level, 421 formed electric capacity, in this embodiment, perforation 52 connects inductance 83 and the first metal layer 411, and perforation 521 connects the inductance 83 and second metal level 421, to form and the binding structure.511 on antenna is connected with inductance 83.
With reference to Figure 21, be the 21 embodiment disclosed in this invention, one inductance 84 optionally is in parallel with the first metal layer 411 and second metal level, 421 formed electric capacity, in this embodiment, perforation 52 connects inductance 84 and the first metal layer 411, perforation 521 connects the inductance 84 and second metal level 421, to form and the binding structure.511 on antenna is connected with inductance 84.
With reference to Figure 22, be the 22 embodiment disclosed in this invention, this antenna substrate is by 17,18, two second dielectric layers 27,28 of two first dielectric layers, 451,471, two second metal levels 461,481 of two the first metal layers and a substrate 37 are combined into a composite base plate.The first metal layer 451 and second metal level 461 are arranged at the both sides of first dielectric layer 18, and the first metal layer 471 and second metal level 481 are arranged at the both sides of first dielectric layer 17.Inductance 85 optionally is in parallel with the first metal layer 451 and second metal level, 461 formed electric capacity, and inductance 86 optionally is in parallel with the first metal layer 471 and second metal level, 481 formed electric capacity.In this embodiment, perforation 56 connects the inductance 85 and second metal level 461, and perforation 561 connects inductance 85 and the first metal layer 451, to form parallel-connection structure.Perforation 58 connects the inductance 86 and second metal level 481, and perforation 581 connects inductance 86 and the first metal layer 471, to form parallel-connection structure.551 on antenna is connected with inductance 85, and 571 on antenna is connected with inductance 86.
According to embodiments of the invention, antenna substrate adopts the composite material compacting to form, and contains high-k material to design built-in electric capacity, and this built-in electric capacity can provide resonance frequency, match circuit and increase radiation efficiency.Can dwindle the size of antenna in addition by high-k material.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (36)
1, a kind of antenna substrate of high-dielectric coefficient is characterized in that, includes:
One first dielectric layer has one first dielectric coefficient; And
One second dielectric layer is formed at a side of this first dielectric layer, has one second dielectric coefficient, and wherein this second dielectric coefficient is lower than this first dielectric coefficient.
2, antenna substrate according to claim 1 is characterized in that, also includes a substrate, is formed at the opposite side of this first dielectric layer.
3, antenna substrate according to claim 2 is characterized in that, this substrate is an organic material substrate.
4, a kind of antenna substrate of high-dielectric coefficient is characterized in that, includes:
Two first dielectric layers, a side of each this first dielectric layer is in contact with one another, and has one first dielectric coefficient respectively; And
Two second dielectric layers are formed at the opposite side of each this first dielectric layer respectively, have one second dielectric coefficient, and wherein this second dielectric coefficient is lower than this first dielectric coefficient.
5, antenna substrate according to claim 4 is characterized in that, also includes a substrate, is formed between these two first dielectric layers.
6, antenna substrate according to claim 5 is characterized in that, this substrate is an organic material substrate.
7, a kind of antenna substrate of high-dielectric coefficient is characterized in that, includes:
One first dielectric layer has one first dielectric coefficient;
One the first metal layer and one second metal level are formed at the both sides of this first dielectric layer respectively, to form an electric capacity; And
One second dielectric layer is formed at a side of this first metal layer, has one second dielectric coefficient, and wherein this second dielectric coefficient is lower than this first dielectric coefficient.
8, antenna substrate according to claim 7 is characterized in that, also includes a substrate, is formed at the opposite side of this first metal layer.
9, antenna substrate according to claim 8 is characterized in that, this substrate is an organic material substrate.
10, a kind of antenna substrate of high-dielectric coefficient is characterized in that, includes:
One first dielectric layer has one first dielectric coefficient;
One the first metal layer and one second metal level are formed at the same side of this first dielectric layer, to form an electric capacity; And
One second dielectric layer is formed at a side of this first metal layer, has one second dielectric coefficient, and wherein this second dielectric coefficient is lower than this first dielectric coefficient.
11, antenna substrate according to claim 10 is characterized in that, also includes a substrate, is formed at the opposite side of this first dielectric layer.
12, antenna substrate according to claim 11 is characterized in that, this substrate is an organic material substrate.
13, a kind of antenna substrate of high-dielectric coefficient is characterized in that, includes:
Two first dielectric layers, a side of each this first dielectric layer is in contact with one another, and has one first dielectric coefficient respectively;
Two the first metal layers and two second metal levels, one of them this first metal layer and one of them this second metal level are formed at the both sides of one of them this first dielectric layer, to form an electric capacity, in another and this second metal level in this first metal layer another is formed at another the both sides in this first dielectric layer, to form an electric capacity;
Two second dielectric layers are formed at the opposite side of this second metal level respectively, have one second dielectric coefficient, and wherein this second dielectric coefficient is lower than this first dielectric coefficient; And
One substrate is formed between these two first dielectric layers.
14, antenna substrate according to claim 13 is characterized in that, this substrate is an organic material substrate.
15, a kind of antenna substrate of high-dielectric coefficient is characterized in that, includes:
Two first dielectric layers, a side of each this first dielectric layer is in contact with one another, and has one first dielectric coefficient respectively;
Two the first metal layers and two second metal levels, one of them this first metal layer and one of them this second metal level are formed at the same side of one of them this first dielectric layer, to form an electric capacity, in another and this second metal level in this first metal layer another is formed at another the same side in this first dielectric layer, to form an electric capacity;
Two second dielectric layers are formed at the opposite side of this second metal level respectively, have one second dielectric coefficient, and wherein this second dielectric coefficient is lower than this first dielectric coefficient; And
One substrate is formed between these two first dielectric layers.
16, antenna substrate according to claim 15 is characterized in that, this substrate is an organic material substrate.
17, a kind of antenna is characterized in that, includes:
One first dielectric layer has one first dielectric coefficient;
One second dielectric layer is formed at a side of this first dielectric layer, has one second dielectric coefficient, and wherein this second dielectric coefficient is lower than this first dielectric coefficient; And
One antenna is formed at the opposite side of this second dielectric layer.
18, antenna according to claim 17 is characterized in that, also includes a substrate, is formed at the opposite side of this first dielectric layer.
19, antenna according to claim 18 is characterized in that, this substrate is an organic material substrate.
20, a kind of antenna is characterized in that, includes:
Two first dielectric layers, a side of each this first dielectric layer is in contact with one another, and has one first dielectric coefficient respectively;
Two second dielectric layers are formed at the opposite side of each this first dielectric layer respectively, have one second dielectric coefficient, and wherein this second dielectric coefficient is lower than this first dielectric coefficient; And
More than one antenna is formed at the opposite side of this second dielectric layer.
21, antenna according to claim 20 is characterized in that, also includes a substrate, is formed between these two first dielectric layers.
22, antenna according to claim 21 is characterized in that, this substrate is an organic material substrate.
23, a kind of antenna is characterized in that, includes:
One first dielectric layer has one first dielectric coefficient;
One the first metal layer and one second metal level are formed at the both sides of this first dielectric layer respectively, to form an electric capacity;
One second dielectric layer is formed at a side of this first metal layer, has one second dielectric coefficient, and wherein this second dielectric coefficient is lower than this first dielectric coefficient; And
One antenna is formed at the opposite side of this second dielectric layer.
24, antenna according to claim 23 is characterized in that, also includes a substrate, is formed at the opposite side of this second metal level.
25, antenna according to claim 24 is characterized in that, this substrate is an organic material substrate.
26, antenna according to claim 23 is characterized in that, also includes an inductance, is arranged at this first dielectric layer and the same side this first metal layer, and is connected with this first metal layer.
27, antenna according to claim 23 is characterized in that, more includes an inductance, is arranged at this first dielectric layer and the same side this second metal level, and is connected with this second metal level.
28, antenna according to claim 23 is characterized in that, also includes an inductance, is formed at the opposite side of this second dielectric layer, and is connected with this antenna.
29, a kind of antenna is characterized in that, includes:
Two first dielectric layers have one first dielectric coefficient respectively;
One substrate is formed between these two first dielectric layers;
Two the first metal layers and two second metal levels, one of them this first metal layer and one of them this second metal level are formed at the both sides of one of them this first dielectric layer, to form an electric capacity, in another and this second metal level in this first metal layer another is formed at another the both sides in this first dielectric layer, to form an electric capacity;
Two second dielectric layers are formed at the opposite side of this second metal level respectively, have one second dielectric coefficient, and wherein this second dielectric coefficient is lower than this first dielectric coefficient; And
More than one antenna is formed at the opposite side of this second dielectric layer.
30, antenna according to claim 29 is characterized in that, this substrate is an organic material substrate.
31, antenna according to claim 29 is characterized in that, also includes an inductance, is arranged at this first dielectric layer and the same side one of them this first metal layer, and is connected with this first metal layer.
32, antenna according to claim 29 is characterized in that, also includes two inductance, is arranged at this first dielectric layer and the same side this first metal layer respectively, and is connected with this first metal layer.
33, antenna according to claim 29 is characterized in that, also includes an inductance, is arranged at the same side of this second metal level with one of them of this first dielectric layer, and is connected with this second metal level.
34, antenna according to claim 29 is characterized in that, also includes two inductance, is arranged at this first dielectric layer and the same side this second metal level, and is connected with this second metal level.
35, antenna according to claim 29 is characterized in that, also includes an inductance, is formed at the opposite side of one of them this second dielectric layer, and is connected with one of them this antenna.
36, antenna according to claim 29 is characterized in that, also includes an inductance, is formed at the opposite side of this second dielectric layer respectively, is connected with this antenna respectively.
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| CN101859929A (en) * | 2009-04-09 | 2010-10-13 | 三星电子株式会社 | Built-in aerial and use the portable mobile terminal of this built-in aerial |
| CN103904422A (en) * | 2012-12-25 | 2014-07-02 | 联想(北京)有限公司 | Antenna device and antenna fabrication method |
| CN111363183A (en) * | 2020-02-25 | 2020-07-03 | 深圳赛兰仕科创有限公司 | Composite membrane and preparation method thereof |
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2006
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101859929A (en) * | 2009-04-09 | 2010-10-13 | 三星电子株式会社 | Built-in aerial and use the portable mobile terminal of this built-in aerial |
| EP2239813A1 (en) * | 2009-04-09 | 2010-10-13 | Samsung Electronics Co., Ltd. | Internal antenna and portable communication terminal using the same |
| US8487818B2 (en) | 2009-04-09 | 2013-07-16 | Samsung Electronics Co., Ltd | Internal antenna and portable communication terminal using the same |
| CN101859929B (en) * | 2009-04-09 | 2014-04-09 | 三星电子株式会社 | Internal antenna and portable communication terminal using same |
| CN103904422A (en) * | 2012-12-25 | 2014-07-02 | 联想(北京)有限公司 | Antenna device and antenna fabrication method |
| CN103904422B (en) * | 2012-12-25 | 2018-10-12 | 联想(北京)有限公司 | Antenna assembly and method for making antenna |
| CN111363183A (en) * | 2020-02-25 | 2020-07-03 | 深圳赛兰仕科创有限公司 | Composite membrane and preparation method thereof |
| CN111363183B (en) * | 2020-02-25 | 2022-09-06 | 深圳赛兰仕科创有限公司 | Composite membrane and preparation method thereof |
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Application publication date: 20070718 |