CN1006597B - 制造薄膜线条的方法 - Google Patents
制造薄膜线条的方法Info
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- CN1006597B CN1006597B CN86102448A CN86102448A CN1006597B CN 1006597 B CN1006597 B CN 1006597B CN 86102448 A CN86102448 A CN 86102448A CN 86102448 A CN86102448 A CN 86102448A CN 1006597 B CN1006597 B CN 1006597B
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 239000004642 Polyimide Substances 0.000 claims abstract description 24
- 229920001721 polyimide Polymers 0.000 claims abstract description 24
- 238000005516 engineering process Methods 0.000 claims abstract description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 10
- 238000001259 photo etching Methods 0.000 claims abstract description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
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- 239000010931 gold Substances 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
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- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 6
- 229910001882 dioxygen Inorganic materials 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 239000003973 paint Substances 0.000 claims description 3
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- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
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- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/108—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0548—Masks
- H05K2203/0554—Metal used as mask for etching vias, e.g. by laser ablation
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- H05K2203/05—Patterning and lithography; Masks; Details of resist
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- H05K2203/0577—Double layer of resist having the same pattern
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- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0562—Details of resist
- H05K2203/0585—Second resist used as mask for selective stripping of first resist
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- H05K2203/09—Treatments involving charged particles
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Abstract
本发明叙述了一种利用光刻厚的光致抗蚀剂，并继而电化选择生长金属的技术制造薄膜线条的方法。本发明的方法可以制得具有高分辨率的非常薄(2-10微米)的线条(8)，即侧壁面(9)几乎是垂直的，宽度的公差仅约一微米。这种结果是采取了下列措施取得的，即采用聚酰亚胺作厚的光致抗蚀剂(3)，让其经历特殊的固化期，采用特殊的干蚀刻工艺在聚酰亚胺层上制得凹座(6)，其后，在凹座(6)内制备线条(8)。
Description
本发明涉及利用光刻厚的光致抗蚀剂，并继而电化选择产生金属的技术来制造薄膜线条的方法。
大家知道，以现有技术可得到高厚度（5-7微米）的薄膜线条。其最小宽度有40-50微米，宽度的公差是5-8微米。
当前，微波领域的趋势是在越来越高的频率（20-30GHZ），同时具有高的特性阻抗（200-300欧姆）和集总电路情况下采用薄膜线条。因而必须采用高厚度（5-7微米）的宽度约4-10微米，高分辩率的，并具有几乎是垂直的侧壁面，公差小到约1微米的薄膜线条。
大家也已知道，高分辩率的线条可以用真空溅射金的技术来获得，但是这种技术的生长速度是非常低的，所以实际上不能应用在大规模生产上。另外，由于这种方法必须首先在整个绝缘基片上溅射上金后再制造线条，因而金的浪费是极大的。用这种方法还存在着线条侧腐蚀的缺点，其侧腐蚀的宽度至少等于其厚度，所以线条的侧壁面产生凹陷。
进一步说，大家已经知道，使用电化选择生产技术可以获得好的生长速度，金也只是加在传导电路上。但是，以现在这样的技术不可能获得所要求的线条分辩率和精度。实际上，需要生长金的凹座是在厚的光致抗蚀剂的基底上制得的。为了要使凹座的壁面符合机械强度的要求，须进行热处理过程。然而热处理使壁面遭损变园，因此生长金后所得到的线条变成了很不规则的蘑菇形。
本发明的一个目的是要克服上述的弊端，提出了一种用光刻厚的光致抗蚀剂，并继而电化选择生长金属的技术制得具有高分辩率，几乎垂直的侧壁面和最大宽度公差大约1微米的薄膜线条的方法。
为了达到上述的目的，本发明涉及利用光刻厚的光致抗蚀剂，并继而电化选择生长金属以制道薄膜线条的方法。其特点为，这种厚的光致抗蚀剂的制造是先在绝缘基片上涂覆一层聚酰亚胺，进行第一次固化，再第二次涂覆一层聚酰亚胺，并进行第二次固化。
本发明的进一步的目的和优点，从下面最佳实施方案详细描述和附图中可以清楚地看出。但这只是举例说明，本发明的内容不仅限于此。这里图1到图11表示了按本发明用光刻厚的光致抗蚀剂的方法制造薄膜线条一个周期的各步骤。
参照附图，制造线条的方法按下面的步骤（工序）进行：
图1：在基片1，即氧化铝、玻璃、兰宝石、氧化铍基片上用真空阴极溅射法敷金属，所敷金属实际含有一个氮化钽电阻层，一个钛粘结层和一个钯防扩散层，它们构成一个三重层（2），总厚度为4000-5000埃。
图2：离心涂覆第一层厚度2-5微米的聚酰亚胺层3a，在反射炉中进行第一次固化，温度范围为120～150℃，时间约2小时，接着温度在170～220℃范围为内，时间2小时。然后，离心涂覆第二层厚度为2～5微米的聚酰亚胺层3b，第二次固化仍是在反射炉中进行，温度范围150～170℃，约2小时，温度范围为170～220℃时也是2小时。聚酰亚胺3a和3b二层完全贴合，形成一均匀的聚酰亚胺层3，总厚度为4～10微米。
图3：在聚酰亚胺层3上用真空阴极溅射法沉积氧化钛层4，厚
度为1000埃。
图4：在氧化钛层4上离心涂覆光敏漆层5，厚度为0.8微米。
图5：该光敏漆层5，通过一金属掩膜，进行紫外曝光，显影后形成10微米宽的凹座6。这些凸座的宽度决定于所要求的线条宽度。按本发明的加工目标，可形成宽度为2微米的线条。
图6：用氢氟酸蚀刻氧化钛金属层4，在氧化钛金属层4处也形成凹座6。
图7：将中间制品沉浸在由生产光敏漆厂家推荐的溶液中，除去光敏漆层5。
图8：在具有高压力（4-8毫巴）和射频13.56兆赫的低密度激发能（2-7瓦/厘米2）的氧气等离子体中对聚酰亚胺进行干蚀刻5-10分钟，借此在聚酰亚胺层3中也同样得到了具有几乎垂直的侧壁面7的凹座6。
图9：在聚酰亚胺层3中所形成的凹座6内，选择性地电化淀积金属。例如，金、银、铜。结果在凹座6内得到了导线8，其厚度为3-7微米，侧壁面9几乎是垂直的。
图10：用氢氟酸溶液除去氧化钛金属层4。
图11：在具有高压力（4-8毫巴）和射频13.56兆赫的低密度激发能（2-7瓦/厘米2），的氧气等离子体中进行干性蚀刻5-10分钟，完全去除聚酰亚胺。在不撤除真空下，吸去氧气等离子体，引入氩气，在低压力（2-4×104毫巴）和高密度的激发能（9-15瓦/厘米2）下，继续干蚀刻5-10分钟，其时三重金属层也完全除去。
整个方法可以制得线段8，其宽变为2-10微米，厚度3-7
微米，其壁面9几乎是垂直的，宽度公差为±0.5微米。能得到这样的结果是由于采用了聚酰亚胺这样的材料来产生凹座6，并对聚酰亚胺进行固化，以及选择了合适的干蚀刻的参数。实际上，使用了聚酰亚胺，特别是特殊的初始固化周期，保证了聚酰亚胺层3的优良的机械强度，而蚀刻的方法和合适的参数的选择。使制得的凹座6能保证其壁7有优良的分辩率。
本发明的制造薄膜线条的方法，其优点是显而易见的。特别是从下面的事实中可以看出，该工艺制造的线条，宽度在2-10微米，厚度3-7微米。其公差仅为0.5微米。跟先有技术相比，得到了明显的改善，线条宽度减小20倍，而宽度的公差减小了10倍。这些线条具有非常好的理论设计价值，可望制造出相互靠得很近的线段。就金属的用量来说，本发明只消耗按精确计算所必须的用量，尤其对金来说，本发明在经济上的节约是非常可观的。此外，因工作时间缩短，从而进一步降低了生产成本。
本领域的技术人员知道，在不脱离本发明范围的情况下，本工艺可有很多改良形式。
Claims (13)
1、一种利用光刻厚的光致抗蚀剂，并继而电化选择生长金属的技术在绝缘基底上制造薄膜线条的方法，其特征在于：
在绝缘基底上敷盖一金属性层；
制备厚光致抗蚀剂：在金属性层上涂覆第一层聚酰亚胺，接着进行第一次固化，再继以涂覆第二层聚酰亚胺，并接着进行第二次固化，该第一和第二层聚酰亚胺固化层形成单一均匀的聚酰亚胺层；
在聚酰亚胺层敷盖一金属层；
在金属层上敷盖一光敏漆层；
使该光敏漆通过使用金属掩膜被紫外光曝光；
使曝光的光敏漆显影，从而在光敏层上得到一些凹座；
蚀刻所述金属层从而在金属层上产生一些凹座；
在第一次特定时间内用氧气等离子体对聚酰亚胺层进行蚀刻；
该蚀刻在聚酰亚胺层上产生壁几乎是垂直的凹座；
在凹座内电化选择沉积金属线条，该金属线条的特点是其壁几乎是垂直的；
去除所述金属层；
在第二次特定时间内用氧气等离子体对聚酰亚胺进行蚀刻；
在该第二次特定的时间之后，用氩气代替氧气在第三次特定的时间是再进行蚀刻。
2、按权利要求1所述的制造薄膜线条的方法，其特征在于所说的氧气等离子体蚀刻要求在高压和低密度激发能下进行。
3、按权利要求2所述的制造薄膜线条的方法，其特征在于所说的氧气等离子体的压力在4到8毫巴之间，激发能的密度在2和7瓦/厘米2之间。
4、按权利要求1所述的制造薄膜线条的方法，其特征在于其中所述的第一次蚀刻时间在5～10分钟之间。
5、按权利要求1所述的制造薄膜线条的方法，其特征在于所说的用氩气进行的第三次蚀刻，在低压力和高密度的激发能下进行。
6、按权利要求5所述的制造薄膜线条的方法，其特征在于氩气的压力在2×10-4至4×10-4毫巴之间，氩气的激发能密度在9至15瓦/厘米2之间。
7、按权利要求1所述的制造薄膜线条的方法，其特征为所说的第三蚀刻时间为5至10分钟。
8、利用权利要求1的方法制造的高厚度薄膜金属线条，其特征在于其侧壁面（9）几乎的垂直的。
9、按权利要求8所述的高厚度薄膜金属线条，其特征在于该侧壁面（9）的宽度公差在于±0.5微米之间。
10、按权利要求8所述的高厚薄膜金属线条，其特征在于该线条的宽度在2至10微米之间，厚度在3至7微米之间。
11、按权利要求8所述的高厚度薄膜金属线条，其特征在于使用的金属是金。
12、按权利要求8所述的高厚度薄膜金属线条，其特征在于使用的金属是银。
13、按权利要求8所述的高厚度薄膜金属线条，其特征在于使用的金属是铜。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT20567/85A IT1184535B (it) | 1985-05-03 | 1985-05-03 | Processo di ricavo di linee in film sottile |
| IT20567A/85 | 1985-05-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN86102448A CN86102448A (zh) | 1986-10-29 |
| CN1006597B true CN1006597B (zh) | 1990-01-24 |
Family
ID=11168906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN86102448A Expired CN1006597B (zh) | 1985-05-03 | 1986-04-19 | 制造薄膜线条的方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4812388A (zh) |
| EP (1) | EP0200237A3 (zh) |
| JP (1) | JPS61255029A (zh) |
| CN (1) | CN1006597B (zh) |
| AU (1) | AU585955B2 (zh) |
| IT (1) | IT1184535B (zh) |
| NO (1) | NO861090L (zh) |
| ZA (1) | ZA862336B (zh) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11501457A (ja) * | 1995-08-09 | 1999-02-02 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 導電体の導体パターンを有する基部を具える装置の製造方法 |
| PT1489906E (pt) * | 2002-03-21 | 2007-08-01 | Basf Ag | Misturas fungicidas. |
| CN110028670A (zh) * | 2019-04-11 | 2019-07-19 | 明士新材料有限公司 | 低介电损耗负性光敏聚酰胺酸酯树脂、树脂组合物、其制备方法及应用 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2428373C2 (de) * | 1974-06-12 | 1982-05-27 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von weichlötbaren Anschlußkontakten auf einer Halbleiteranordnung |
| US4367119A (en) * | 1980-08-18 | 1983-01-04 | International Business Machines Corporation | Planar multi-level metal process with built-in etch stop |
| US4451971A (en) * | 1982-08-02 | 1984-06-05 | Fairchild Camera And Instrument Corporation | Lift-off wafer processing |
| US4555414A (en) * | 1983-04-15 | 1985-11-26 | Polyonics Corporation | Process for producing composite product having patterned metal layer |
| JPS59202636A (ja) * | 1983-05-04 | 1984-11-16 | Hitachi Ltd | 微細パタ−ン形成方法 |
| US4523976A (en) * | 1984-07-02 | 1985-06-18 | Motorola, Inc. | Method for forming semiconductor devices |
| JPS61242044A (ja) * | 1985-04-19 | 1986-10-28 | Matsushita Electronics Corp | 半導体装置の製造方法 |
| US4606998A (en) * | 1985-04-30 | 1986-08-19 | International Business Machines Corporation | Barrierless high-temperature lift-off process |
-
1985
- 1985-05-03 IT IT20567/85A patent/IT1184535B/it active
-
1986
- 1986-03-14 AU AU54852/86A patent/AU585955B2/en not_active Ceased
- 1986-03-17 EP EP86200415A patent/EP0200237A3/en not_active Withdrawn
- 1986-03-20 NO NO861090A patent/NO861090L/no unknown
- 1986-03-27 ZA ZA862336A patent/ZA862336B/xx unknown
- 1986-04-19 CN CN86102448A patent/CN1006597B/zh not_active Expired
- 1986-04-28 JP JP61097067A patent/JPS61255029A/ja active Pending
-
1987
- 1987-09-25 US US07/102,302 patent/US4812388A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| IT1184535B (it) | 1987-10-28 |
| IT8520567A0 (it) | 1985-05-03 |
| JPS61255029A (ja) | 1986-11-12 |
| NO861090L (no) | 1986-11-04 |
| US4812388A (en) | 1989-03-14 |
| AU5485286A (en) | 1986-11-06 |
| ZA862336B (en) | 1986-11-26 |
| EP0200237A3 (en) | 1988-09-07 |
| EP0200237A2 (en) | 1986-11-05 |
| AU585955B2 (en) | 1989-06-29 |
| CN86102448A (zh) | 1986-10-29 |
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