CN100592468C - Substrate processing apparatus - Google Patents

Abstract

A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, a resist cover film processing block, a resist cover film removal block, a cleaning/drying processing block, and an interface block. An exposure device is arranged adjacent to the interface block in the substrate processing apparatus. The exposure device subjects a substrate to exposure processing by means of an immersion method. In the edge cleaning unit in the cleaning/drying processing block, a blush abuts against an end of the rotating substrate, so that the edge of the substrate before the exposure processing is cleaned. At this time, the position where the substrate is cleaned is corrected.

Description

Substrate board treatment

Technical field

The present invention relates to a kind of substrate board treatment that substrate is handled.

Background technology

For semiconductor substrate, base plate for liquid crystal display device, plasma display are carried out all processing with substrate, disk with various substrates such as substrate, optomagnetic base-board for plate, base board for optical mask with substrate, CD, and use substrate board treatment.

In such substrate board treatment, generally a substrate is carried out a plurality of different processing continuously.The substrate board treatment that TOHKEMY 2003-324139 communique is put down in writing is made of with treatment region, development treatment district and interface area with treatment region, etchant resist protractor district, antireflection film.Separate independently to dispose adjacent to the mode of interface area with substrate board treatment, as the exposure device of external device (ED).

In above-mentioned substrate board treatment, the substrate of moving into from the protractor district, after antireflection film has carried out the formation of antireflection film and etchant resist in treatment region with treatment region and etchant resist coating is handled, via interface area by conveyance to exposure device.In exposure device, the etchant resist on the substrate is carried out after the exposure-processed, substrate via interface area by conveyance to the development treatment district.By in the development treatment district, the etchant resist on the substrate being carried out after development treatment forms corrosion-resisting pattern, substrate by conveyance to the protractor district.

In recent years, be accompanied by the densification of device and highly integrated, the miniaturization of corrosion-resisting pattern becomes important problem.In general exposure device in the past, on substrate, carry out exposure-processed via the projecting lens reduced projection by pattern with graticule., in such exposure device in the past, because the live width of exposing patterns depends on the wavelength of the light source of exposure device, so the miniaturization of corrosion-resisting pattern is restricted.

Therefore, as the exposure method of the further miniaturization of exposing patterns having been proposed immersion method (for example, with reference to international the 99/49504th trumpeter's volume that discloses).In the world disclosed projection aligner in the 99/49504th trumpeter's volume, being full of between projection optical system and substrate had liquid, thereby can make the exposure light short wavelengthization at substrate surface.Thus, can make the further miniaturization of exposing patterns.

; the above-mentioned world discloses in the projection aligner in the 99/49504th trumpeter's volume, owing under substrate and liquid state of contact, carry out exposure-processed, and therefore; when being attached with polluter on the exposure-processed prebasal plate, this polluter can be blended in the liquid.

Handle though before exposure-processed, substrate is implemented various film forming,, in the process that this film forming is handled, the end of polluting substrate sometimes.Like this, when under the contaminated state in the end of substrate substrate being carried out exposure-processed, the lens of exposure device are contaminated, and the bad and shape defect of size of exposing patterns might take place.

Summary of the invention

The object of the present invention is to provide a kind of pollution that can prevent in the exposure device that the pollution by the end of substrate causes.

(1) substrate board treatment of the present invention disposes adjacent to exposure device, has: handling part, and it is handled substrate; The junction, it is provided with adjacent to an end of handling part, be used between handling part and exposure device, carrying out the handing-over of substrate, in handling part and the junction at least one comprises first processing unit, the end of this first processing unit cleaning base plate before carrying out exposure-processed by exposure device; First processing unit has: base plate keeping device, and it remains approximate horizontal with substrate; Rotary drive mechanism, it makes the substrate that is kept by base plate keeping device is that the center is rotated with the axle vertical with this substrate; Cleaning device, it cleans the end of the substrate that is rotated by rotary drive mechanism; Position correcting apparatus, it revises the cleaning positions that substrate is cleaned by cleaning device.

This substrate board treatment disposes adjacent to exposure device.In this substrate board treatment, by handling part substrate is carried out predetermined process, by the junction that the end adjacent to handling part is provided with, between handling part and exposure device, carry out the handing-over of substrate.

Before exposure device carries out exposure-processed, by the end of the first processing unit cleaning base plate.In first processing unit, clean by cleaning device by the end of the substrate of rotary drive mechanism rotation.At this moment, the cleaning positions of the substrate that is cleaned by cleaning device is revised by position correcting apparatus.Thereby, the end of cleaning base plate equably.Thus, can prevent to produce and clean irregularly, can positively remove attached to the polluter on the end of substrate in the end of substrate.

Consequently, the pollution in the exposure device that the pollution because of the end of substrate causes can be prevented, the generation of the bad and shape defect of the size of exposing patterns can be prevented.

In addition, under the situation that is formed with organic membrane on the substrate, in exposure-processed, the composition of the organic membrane on the substrate might stripping or is separated out.Therefore, by the end of cleaning base plate, thus in exposure-processed, the stripping or separate out first processing unit in advance of organic membrane stripping from substrate or the composition of separating out, and rinse out leachable or precipitate.Therefore, when exposure-processed, can prevent the composition stripping of the organic membrane on the substrate or separate out.Thus, prevent that exposure device is contaminated, consequently, can prevent the generation of the bad and shape defect of the size of exposing patterns.

(2) position correcting apparatus can be revised the position of substrate, makes that the center that is maintained at the substrate on the base plate keeping device is consistent with the pivot of the substrate that is driven rotation by rotary drive mechanism.

At this moment, in first processing unit, revise the position of substrate, make that the center of the substrate that kept by base plate keeping device approximate horizontal ground is consistent with the pivot of the substrate that is rotated by rotary drive mechanism by position correcting apparatus.

Therefore thus, prevent the relative pivot off-centre in center of substrate when the end of cleaning base plate, the end of cleaning base plate equably.Therefore, can prevent to produce and clean irregularly, can positively remove attached to the polluter on the end of substrate in the end of substrate.

In addition, consistent by the center that makes substrate with pivot, and can adjust the cleaning zone of the end of the substrate that cleans by cleaning device accurately.Thereby, can have and select and various zones in the end of cleaning base plate correctly.Therefore, can prevent from the part of the substrate that should not clean is carried out unnecessary cleaning.

And then, owing to the spin stabilization of substrate when the end of cleaning base plate, therefore prevented that the cleaning fluid that is used to clean from dispersing to irregular direction.Thereby the cleaning fluid that has prevented to disperse is once more attached on the substrate surface and pollute substrate.

(3) position correcting apparatus can comprise by revising a plurality of abutting member of the position of substrate with the peripheral end butt of substrate.

At this moment, the peripheral end of abutting member and substrate connects, and promotes substrate on general horizontal direction, thereby revises the position of substrate.Thus, even under the situation that is formed with organic membrane on the substrate, abutting member can not brought damage to the organic membrane on the substrate yet, can positively revise the position of substrate.

(4) a plurality of abutting member can be configured in pivot with substrate and are on the position of symmetry of benchmark, and move with the speed that equates mutually towards the pivot of substrate.

At this moment, a plurality of abutting member move with the speed that equates mutually and promote substrate towards the pivot of substrate, make that the center of substrate is consistent with the pivot of substrate.Thus, can revise the position of substrate rapidly and positively with simple structure.

(5) a plurality of abutting member, can be relatively to drive the pivot of substrate of rotation and the oblique upper mode of extending obliquely and being configured laterally by rotary drive mechanism, position correcting apparatus also comprises and keeps a plurality of abutting member and make the lowering or hoisting gear that above-mentioned a plurality of abutting member can lifting, lowering or hoisting gear rises a plurality of abutting member, so that the peripheral end butt of a plurality of abutting member and substrate.

At this moment, when lift component rises a plurality of abutting member, the peripheral end butt of the some and substrate of a plurality of abutting member.Under this state, when lowering or hoisting gear further rises a plurality of abutting member, because the pivot of the substrate that a plurality of butts are rotated by rotary drive mechanism relatively oblique upper laterally extends obliquely, so the abutting member of the peripheral end of butt substrate is slided, and move in the horizontal direction towards the pivot of the substrate that is rotated by rotary drive mechanism.

Thereby a plurality of abutting member are connected to the peripheral end of substrate, and the center of substrate is consistent with the pivot of the substrate that is rotated by rotary drive mechanism.Like this, can revise the position of substrate rapidly and positively with simple structure.

(6) position correcting apparatus can comprise supporting member, and the back side of this support member support substrate is by moving the position of revising substrate on general horizontal direction.

At this moment, under the state of the back side of substrate, move the position of revising substrate in general horizontal direction by making supporting member by support member support.Thereby even under the situation that is formed with organic membrane on the substrate, supporting member can not bring damage to the organic membrane on the substrate yet, can positively revise the position of substrate.

(7) substrate board treatment can also have substrate position detector and control device, and wherein, the substrate position detector detects the position of the relative base plate keeping device of substrate, and control device comes the control position correcting device based on the output signal of substrate position detector.

At this moment, correctly discern the position of the relative base plate keeping device of substrate by control device.In addition, based on this, control device control position correcting device, thus correctly revise the position of substrate.

(8) position correcting apparatus can comprise: the end detector, and it detects the end position of the substrate that is rotated by rotary drive mechanism; Cleaning device travel mechanism, it is based on the end position by the detected substrate of end detector, in the mode of the relative position at the center that keeps cleaning positions and substrate cleaning device is moved.

At this moment, detect the end position of the substrate that rotates by rotary drive mechanism by the end detector.Based on the end position of detected substrate, come mobile cleaning device by cleaning device travel mechanism in the mode of the relative position at the center that keeps cleaning device and substrate.

Thus, when the end of substrate is cleaned, even under the situation that the pivot of the center of substrate and the substrate that is rotated by rotary drive mechanism departs from, because the relative position at the center of cleaning device and substrate is being held, so the also end of cleaning base plate equably.Therefore, can prevent to produce and clean irregularly, can positively remove attached to the polluter on the end of substrate in the end of substrate.

In addition, can adjust the cleaning zone of the end of the substrate that cleans by cleaning device accurately.Thereby, can have and select and various zones in the end of cleaning base plate correctly.Therefore, can prevent from the part of the substrate that should not clean is carried out unnecessary cleaning.

(9) position correcting apparatus can comprise: the end detector, and it detects the end position of the substrate that is rotated by rotary drive mechanism; Holding device travel mechanism, it is based on the end position by the detected substrate of end detector, in the mode of the relative position at the center that keeps cleaning positions and substrate base plate keeping device is moved.

At this moment, detect the end position of the substrate that rotates by rotary drive mechanism by the end detector.Based on the end position of detected substrate, come the moving substrate holding device by holding device travel mechanism in the mode of the relative position at the center that keeps cleaning device and substrate.

Thus, when the end of substrate is cleaned, even under the situation that the pivot of the center of substrate and the substrate that is rotated by rotary drive mechanism departs from, because the relative position at the center of cleaning device and substrate is being held, so the also end of cleaning base plate equably.Therefore, can prevent to produce and clean irregularly, can positively remove attached to the polluter on the end of substrate in the end of substrate.

In addition, can adjust the cleaning zone of the end of the substrate that cleans by cleaning device accurately.Thereby, can be selectively and various zones in the end of cleaning base plate correctly.Therefore, can prevent from the part of the substrate that should not clean is carried out unnecessary cleaning.

(10) substrate board treatment also has the portion of moving into, and this is moved into portion and moves into substrate to first processing unit, and position correcting apparatus comprises: move into position detector, it detects by the position of moving into the move into portion of portion when first processing unit is moved into substrate; Position regulator, it adjusts the position of the portion of moving into based on by moving into the detected position of position detector.

At this moment, by the portion that moves into when first processing unit is moved into substrate, by moving into the position that position detector detects the portion of moving into,, move into the position of portion by position regulator adjustment based on detected position.Thereby, revise by the position of the substrate of mounting on base plate keeping device.Therefore, even under the situation that is formed with organic membrane on the substrate, abutting member can not brought damage to the organic membrane on the substrate yet, can positively revise the position of substrate.

(11) junction is included in the carrying device of conveyance substrate between handling part and the exposure device, carrying device comprises first and second maintaining part that keeps substrate, during substrate before the conveyance exposure-processed, keep substrate by first maintaining part, during substrate after the conveyance exposure-processed, keep substrate by second maintaining part.

At this moment, though when exposure-processed liquid attached to substrate on because second maintaining part is used to the conveyance of the substrate after the exposure-processed, first maintaining part is used to the conveyance of the substrate before the exposure-processed, so can prevent that liquid is attached on first maintaining part.Thereby, can prevent on the substrate before liquid is attached to exposure-processed.Thus, can prevent positively that dust etc. in the environmental gas is attached on the substrate before the exposure-processed.

(12) second maintaining parts can be set at the below of first maintaining part.At this moment, even liquid falls from second maintaining part with by the substrate of its maintenance, liquid can be on attached to first maintaining part and the substrate by its maintenance yet.Thus, can prevent positively that dust etc. is attached on the substrate before the exposure-processed.

(13) handling part also comprises second processing unit, and this second processing unit forms the photosensitive film that is made of photosensitive material on substrate.

At this moment,, after forming the photosensitive film that constitutes by photosensitive material on the substrate, the end of substrate is cleaned by second processing unit by first processing unit.Thereby, in exposure-processed,, and rinse out leachable or precipitate from the stripping or separate out first processing unit in advance of photosensitive film stripping or the composition of separating out.Therefore, can prevent when exposure-processed the composition stripping of photosensitive film or separate out.Thus, prevent that exposure device is contaminated.Consequently, can prevent the generation of the bad and shape defect of the size of exposing patterns.

(14) handling part also comprises the 3rd processing unit, and the 3rd processing unit forms the diaphragm of protection photosensitive film.

At this moment, owing on photosensitive film, be formed with diaphragm, so even carry out exposure-processed under substrate and liquid state of contact in exposure device, the composition stripping that also can prevent photosensitive film is in liquid.Thus, can positively prevent the pollution that exposure device is interior.

(15) handling part comprises that also manages the unit everywhere, and this is managed the unit everywhere remove diaphragm after exposure-processed.

At this moment, can positively remove formed diaphragm on photosensitive film.

(16) handling part can also comprise the 5th processing unit, and the 5th processing unit formed antireflection film on substrate before forming photosensitive film by second processing unit.

At this moment, owing on substrate, be formed with antireflection film, so the standing wave and the halation that take place can reduce exposure-processed the time.

(17) handling part also comprises the 6th processing unit, and the 6th processing unit carries out development treatment to substrate.

At this moment, in the 6th processing unit, carry out the development treatment of substrate.

The cleaning device of (18) first processing units can comprise second fluid nozzle, and this second fluid nozzle is ejected into the fluid-mixing of liquid and gas the end of substrate.

At this moment, in first processing unit, by the end of second fluid nozzle cleaning base plate.Like this, under the situation of the end of using the second fluid nozzle cleaning base plate, the fluid-mixing of gas and liquid is ejected into the end of substrate, thereby cleans this end.Thus, can access very high cleaning performance.

In addition, being ejected into the end of substrate by the fluid-mixing with gas and liquid, is to clean this end in non-contacting mode, therefore, and the damage of the end of substrate in the time of can preventing to clean.And then, by ejection pressure and the gas in the fluid-mixing and the ratio of liquid of control fluid-mixing, the also cleaning condition of the end of control basal plate easily.

And then, owing to, uniform fluid-mixing can be ejected into the end of substrate, so can not clean irregular by second fluid nozzle.

The cleaning device of (19) first processing units can comprise ultrasonic nozzle, and this ultrasonic nozzle applies ultrasonic wave to liquid and this liquid is ejected into the end of substrate.

At this moment, in first processing unit, come the end of cleaning base plate by ultrasonic nozzle.Like this, using ultrasonic nozzle substrate to be carried out under the situation of end clean, to applying by the liquid in the ultrasonic nozzle and the corresponding high frequency output of high-frequency electrical flow valuve.Thus, the liquid that is in the ultrasonic vibration state is ejected into the end of substrate, and cleans this end.At this moment, can be according to the kind and the cleaning condition of substrate, electric variable control is applied in the high frequency output to liquid.

(20) substrate board treatment of the present invention adjacent to by immersion method the exposure device that substrate carries out exposure-processed being disposed, has: handling part, and it is handled substrate; The junction, it is provided with adjacent to an end of handling part, is used for carrying out between handling part and exposure device the handing-over of substrate, and the junction comprises the end cleaning unit, this end cleaning unit uses the end of cleaning brush cleaning base plate before carrying out exposure-processed by exposure device.

This substrate board treatment disposes adjacent to exposure device.In this substrate board treatment, by handling part substrate is carried out predetermined process, by the junction that the end adjacent to handling part is provided with, between handling part and exposure device, carry out the handing-over of substrate.

Before exposure device carries out exposure-processed, come the end of cleaning base plate by the end cleaning unit that is set at the junction.Thus, can remove attached to the polluter on the end of substrate.Thereby, can before exposure-processed, the end of substrate be remained on the state of abundant cleaning.

Consequently, the pollution in the exposure device that the pollution because of the end of substrate causes can be prevented, the generation of the bad and shape defect of the size of exposing patterns can be prevented.

And then under the situation that is formed with organic membrane on the substrate, in exposure-processed, the composition of the organic membrane on the substrate might stripping or is separated out.Therefore, by the end of cleaning base plate, the stripping or separate out first processing unit in advance of organic membrane stripping in exposure-processed from substrate or the composition of separating out, and rinse out leachable or precipitate.Therefore, can prevent when exposure-processed the composition stripping of the organic membrane on the substrate or separate out.Thus, prevent that exposure device is contaminated.Consequently, can prevent the generation of the bad and shape defect of the size of exposing patterns.

Description of drawings

Fig. 1 is the schematic vertical view of the substrate board treatment of one embodiment of the present invention.

Fig. 2 is the end view from the substrate board treatment of+observed Fig. 1 of directions X.

Fig. 3 is the end view from the substrate board treatment of-observed Fig. 1 of directions X.

Fig. 4 is the figure that is used to illustrate the structure of end cleaning unit.

Fig. 5 is the generalized schematic that is used to illustrate the end of substrate.

Fig. 6 is used for the figure that the detailed content to the shape of leading arm and action describes.

Fig. 7 is the figure of structure of end cleaning device that is used for the end cleaning unit of key diagram 4.

Fig. 8 is the figure that is used to illustrate other structure example of end cleaning unit.

Fig. 9 is that expression is by the flow chart of local control to an example of the control of end cleaning unit.

Figure 10 is the figure that is used to illustrate the another structure example of end cleaning unit.

Figure 11 is used for illustrating 4 supporting pins of end cleaning unit of Figure 10 and the figure that handles the lifting action of cup.

Figure 12 is used for illustrating 4 supporting pins of end cleaning unit of Figure 10 and the figure that handles the lifting action of cup.

Figure 13 is the figure that is used to illustrate the another structure example of end cleaning unit.

Figure 14 is the figure that is used to illustrate the another structure example of end cleaning unit.

Figure 15 is the figure that is used to illustrate the another structure example of end cleaning unit.

Figure 16 is the figure of action that is used to illustrate the hand of the Figure 15 when the end cleaning unit is moved into substrate.

Figure 17 is the figure that is used to illustrate the another structure example of end cleaning unit.

Figure 18 is the sectional arrangement drawing of an example of the internal structure of the expression second fluid nozzle that is used for the end clean.

Figure 19 is other routine sectional arrangement drawings of internal structure that expression is used for the second fluid nozzle of end clean.

Figure 20 is the figure that is used to illustrate the another structure example of end cleaning unit.

Figure 21 is the figure that is used to illustrate the structure of washing/drying processing unit.

Figure 22 is the figure that is used to illustrate the action of washing/drying processing unit.

Figure 23 is used for the specification interface structure of transport mechanism and the figure of action.

Figure 24 is expression dried other routine schematic diagrames with nozzle.

Figure 25 is expression dried other routine schematic diagrames with nozzle.

Figure 26 is the figure that is used to illustrate the drying method of the substrate the when dried of having used Figure 25 is used nozzle.

Figure 27 is expression dried other routine schematic diagrames with nozzle.

Figure 28 is other routine schematic diagrames of expression washing/drying processing unit.

Figure 29 is the figure of the drying method of the substrate when being used to illustrate the washing/drying processing unit that has used Figure 28.

Figure 30 is the end view of the substrate board treatment when being arranged on the end cleaning unit on the interface area of Fig. 1.

Embodiment

Below, at the substrate board treatment of one embodiment of the present invention, use accompanying drawing to describe.In the following description, so-called substrate refers to semiconductor substrate, base plate for liquid crystal display device, plasma display substrate, photomask glass substrate, CD substrate, disk substrate, optomagnetic base-board for plate, base board for optical mask etc., and substrate contains silicon (Si).

In addition, in following accompanying drawing,, indicate the arrow of the orthogonal directions X of expression, Y direction, Z direction for clear and definite position relation.Directions X and Y direction are vertical mutually in horizontal plane, and the Z direction is equivalent to vertical.In addition, on all directions, the direction of arrow points is made as+direction, and the direction that it is opposite is made as-direction.In addition, will be that the direction of rotation at center is made as the θ direction with the Z direction.

(1) structure of substrate board treatment

Below, the substrate board treatment at one embodiment of the present invention describes with reference to accompanying drawing.

Fig. 1 is the schematic vertical view of the substrate board treatment of one embodiment of the present invention.

As shown in Figure 1, substrate board treatment 500 comprises: protractor district 9, antireflection film are removed district 14, washing/drying treatment region 15 and interface area 16 with treatment region 11, development treatment district 12, epiphragma against corrosion with treatment region 13, epiphragma against corrosion with treatment region 10, etchant resist.In substrate board treatment 500, be arranged side by side these districts by said sequence.

In addition, dispose exposure device 17 in the mode adjacent with the interface area 16 of substrate board treatment 500.In exposure device 17, substrate W is carried out exposure-processed by immersion method.

Protractor district 9 comprises master controller (control part) 90, a plurality of conveyer mounting table 92 and the protractor manipulator IR of the action in each district of control.On protractor manipulator IR, upper and lower settings is useful on hand IRH1, the IRH2 of handing-over substrate W.

Antireflection film comprises that with treatment region 10 antireflection film heat treatment portion 100,101, antireflection film are with applying the handling part 30 and the second central robot CR2.Antireflection film is provided with heat treatment portion 100,101 subtends ground across the second central robot CR1 and antireflection film with coating handling part 30.At the second central robot CR2, upper and lower settings is useful on hand CRH1, the CRH2 of handing-over substrate W.

Use between the treatment region 10 in protractor district 9 and antireflection film, be provided with the partition walls 20 that isolation environment gas is used.In this partition walls 20, closely be provided with the PASS1 of substrate-placing portion, PASS2 up and down, the PASS1 of this substrate-placing portion, PASS2 are used for carrying out the handing-over of substrate W between protractor district 9 and antireflection film are with treatment region 10.The PASS1 of substrate-placing portion of upside is being used from 9 conveyances of protractor district to antireflection film substrate W during with treatment region 10, and the PASS2 of substrate-placing portion of downside is being used from antireflection film with treatment region 10 conveyances substrate W during to protractor district 9.

In addition, on the PASS of substrate-placing portion 1, PASS2, be provided with the transducer (not shown) that detects the optical profile type that has or not substrate W.Thus, can carry out on the PASS1 of substrate-placing portion, PASS2 the judgement whether mounting has substrate W.In addition, on the PASS1 of substrate-placing portion, PASS2, be provided with a plurality of supporting pins that are fixed and are provided with.In addition, the transducer of above-mentioned optical profile type and supporting pin are set on the substrate-placing PASS3～PASS16 of portion described later similarly.

Etchant resist comprises that with treatment region 11 etchant resist heat treatment portion 110,111, etchant resist are with applying handling part 40 and the 3rd central robot CR3.Etchant resist is provided with heat treatment portion 110,111 subtends ground across the 3rd central robot CR3 and etchant resist with coating handling part 40.At the 3rd central robot CR3, upper and lower settings is useful on hand CRH3, the CRH4 of handing-over substrate W.

Use between the treatment region 11 with treatment region 10 and etchant resist at antireflection film, be provided with the partition walls 21 that isolation environment gas is used.In this partition walls 21, closely be provided with the PASS3 of substrate-placing portion, PASS4 up and down, the PASS3 of this substrate-placing portion, PASS4 are used for carrying out between with treatment region 11 with treatment region 10 and etchant resist at antireflection film the handing-over of substrate W.The PASS3 of substrate-placing portion of upside is being used to etchant resist substrate W during with treatment region 11 with treatment region 10 conveyances from antireflection film, and the PASS4 of substrate-placing portion of downside is being used to antireflection film substrate W during with treatment region 10 with treatment region 11 conveyances from etchant resist.

Development treatment district 12 comprises develops with heat treatment portion 120,121, development treatment portion 50 and the 4th central robot CR4.Development treatment portion 50 across the 4th central robot CR4 and the setting of developing with using heat treatment portion 120,121 subtends.At the 4th central robot CR4, upper and lower settings is useful on hand CRH5, the CRH6 of handing-over substrate W.

Between etchant resist is with treatment region 11 and development treatment district 12, be provided with the partition walls 22 that isolation environment gas is used.In this partition walls 22, closely be provided with the PASS5 of substrate-placing portion, PASS6 up and down, the PASS5 of this substrate-placing portion, PASS6 are used for carrying out the handing-over of substrate W between etchant resist is with treatment region 11 and development treatment district 12.The PASS5 of substrate-placing portion of upside is being used from etchant resist with treatment region 11 conveyances substrate W during to development treatment district 12, and the PASS6 of substrate-placing portion of downside is being used from 12 conveyances of development treatment district to etchant resist substrate W during with treatment region 11.

Epiphragma against corrosion comprises that with treatment region 13 epiphragma against corrosion heat treatment portion 130,131, epiphragma against corrosion are with applying handling part 60 and the 5th central robot CR5.Epiphragma against corrosion is provided with heat treatment portion 130,131 subtends ground across the 5th central robot CR5 and epiphragma against corrosion with coating handling part 60.At the 5th central robot CR5, upper and lower settings is useful on hand CRH7, the CRH8 of handing-over substrate W.

Use between the treatment region 13 in development treatment district 12 and epiphragma against corrosion, be provided with the partition walls 23 that isolation environment gas is used.In this partition walls 23, closely be provided with up and down and be used for the PASS7 of substrate-placing portion, PASS8, the PASS7 of this substrate-placing portion, PASS8 carry out the handing-over of substrate W between development treatment district 12 and epiphragma against corrosion are with treatment region 13.The PASS7 of substrate-placing portion of upside is being used from 12 conveyances of development treatment district to epiphragma against corrosion substrate W during with treatment region 13, and the PASS8 of substrate-placing portion of downside is being used from epiphragma against corrosion with treatment region 13 conveyances substrate W during to development treatment district 12.

Epiphragma against corrosion is removed district 14 and is comprised that epiphragma against corrosion removes with handling part 70a, 70b and the 6th central robot CR6.Epiphragma against corrosion is removed with handling part 70a, 70b and is provided with across the 6th central robot CR6 subtend ground.At the 6th central robot CR6, upper and lower settings is useful on hand CRH9, the CRH10 of handing-over substrate W.

Remove with treatment region 13 and epiphragma against corrosion between the district 14 at epiphragma against corrosion, be provided with the partition walls 24 that isolation environment gas is used.In this partition walls 24, closely be provided with the PASS9 of substrate-placing portion, PASS10 up and down, the PASS9 of this substrate-placing portion, PASS10 are used for removing the handing-over of carrying out substrate W between the district 14 with treatment region 13 and epiphragma against corrosion at epiphragma against corrosion.The PASS9 of substrate-placing portion of upside was used in that substrate W is removed the district with treatment region 13 conveyances to epiphragma against corrosion from epiphragma against corrosion in 14 o'clock, and the PASS10 of substrate-placing portion of downside is used during with treatment region 13 to epiphragma against corrosion in that substrate W is removed district's 14 conveyances from epiphragma against corrosion.

Washing/drying treatment region 15 comprises exposure back oven dry heat treatment portion 150,151, washing/drying handling part 80 and the 7th central robot CR7.The oven dry of exposure back is adjacent with interface area 16 with heat treatment portion 151, as hereinafter described, has the PASS13 of substrate-placing portion, PASS14.Washing/drying handling part 80 is provided with heat treatment portion 150,151 subtends ground with the oven dry of exposure back across the 7th central robot CR7.At the 7th central robot CR7, upper and lower settings is useful on hand CRH11, the CRH12 of handing-over substrate W.

Epiphragma against corrosion is removed between district 14 and the washing/drying treatment region 15 and is provided with the partition walls 25 that isolation environment gas is used.In this partition walls 25, closely be provided with the PASS11 of substrate-placing portion, PASS12 up and down, the PASS11 of this substrate-placing portion, PASS12 are used for removing the handing-over of carrying out substrate W between district 14 and the washing/drying treatment region 15 at epiphragma against corrosion.The PASS11 of substrate-placing portion of upside is being used during to washing/drying treatment region 15 in that substrate W is removed district's 14 conveyances from epiphragma against corrosion, and the PASS12 of substrate-placing portion of downside was used substrate W being removed the district from 15 conveyances of washing/drying treatment region to epiphragma against corrosion in 14 o'clock.

Interface area 16 comprises the 8th center manipulator CR8, carries buffering reservoir SBF, interface transport mechanism IFR and the EEW of edge exposure portion.In addition, the downside at the EEW of edge exposure portion is provided with the described substrate-placing PASS15 of portion in back, PASS16 and returns buffering reservoir RBF.At the 8th center manipulator CR8, upper and lower settings be used to join hand CRH13, the CRH14 of substrate W, interface with transport mechanism IFR upper and lower settings be used to join hand H1, the H2 of substrate W.

Fig. 2 is the end view of the substrate board treatment 500 from+observed Fig. 1 of directions X.

With the antireflection film of treatment region 10 coating handling part 30 (with reference to Fig. 1), dispose to stacked on top of one another 3 coating element BARC at antireflection film.Each coating element BAC has with flat-hand position absorption and keeps substrate W and make the rotary chuck 31 of its rotation and supply with the supply nozzle 32 of the coating liquid of antireflection film to being maintained at substrate W on the rotary chuck 31.

With the etchant resist of treatment region 11 coating handling part 40 (with reference to Fig. 1), dispose to stacked on top of one another 3 coating element RES at etchant resist.Each coating element RES has with flat-hand position absorption and keeps substrate W and make the rotary chuck 41 of its rotation and supply with the supply nozzle 42 of the coating liquid of etchant resist to being maintained at substrate W on the rotary chuck 41.

Development treatment portion 50 (with reference to Fig. 1) in development treatment district 12 disposes to stacked on top of one another 5 development treatment cells D EV.Each development treatment cells D EV has with flat-hand position absorption and keeps substrate W and make the rotary chuck 51 of its rotation and supply with the supply nozzle 52 of developer solution to being maintained at substrate W on the rotary chuck 51.

With the epiphragma against corrosion of treatment region 13 coating handling part 60 (with reference to Fig. 1), dispose to stacked on top of one another 3 coating element COV at epiphragma against corrosion.Each coating element COV has with flat-hand position absorption and keeps substrate W and make the rotary chuck 61 of its rotation and supply with the supply nozzle 62 of the coating liquid of epiphragma against corrosion to being maintained at substrate W on the rotary chuck 61.As the coating liquid of epiphragma against corrosion, can use and the low material (with the reactive low material of resist and water) of affinity of resist and water.For example, fluororesin.Coating element COV by making substrate W rotation time coating liquid coating on substrate W, forms epiphragma against corrosion thus on the resist film that is formed on the substrate W.

Remove the epiphragma against corrosion in district 14 at epiphragma against corrosion and remove on the usefulness handling part 70b (with reference to Fig. 1), dispose to stacked on top of one another 3 and remove unit R EM.Respectively removing unit R EM has with flat-hand position absorption and keeps substrate W and make the rotary chuck 71 of its rotation and supply with the supply nozzle 72 of stripper (for example fluororesin) to being maintained at substrate W on the rotary chuck 71.Remove unit R EM, the time on substrate W, apply stripper, remove the epiphragma against corrosion that is formed on the substrate W by making substrate W rotation.

In addition, the method for removing of removing the epiphragma against corrosion among the unit R EM is not limited to above-mentioned example.For example, can remove epiphragma against corrosion by on substrate W, supplying with stripper when above substrate W, gap nozzle being moved.

On the washing/drying handling part 80 (with reference to Fig. 1) of washing/drying treatment region 15, stack gradually and dispose 1 end cleaning unit EC and two washing/drying processing unit SD.Detailed content about end cleaning unit EC and washing/drying processing unit SD is narrated in the back.

At interface area 16, dispose to stacked on top of one another two EEW of edge exposure portion, the PASS15 of substrate-placing portion, PASS16 and return buffer part RBF, dispose the 8th central robot CR8 (with reference to Fig. 1) and interface transport mechanism IFR simultaneously.Each EEW of edge exposure portion has with flat-hand position absorption maintenance substrate W and makes the rotary chuck 98 of its rotation and the light illuminator 99 that exposure is maintained at the periphery of the substrate W on the rotary chuck 98.

Fig. 3 is the end view of the substrate board treatment 500 from-observed Fig. 1 of directions X.

In the antireflection film heat treatment portion 100 of antireflection film with treatment region 10, laminated configuration has two heating unit (heating plate) HP and two cooling units (coldplate) CP, with heat treatment portion 101, dispose to stacked on top of one another two heating unit HP and two cooling unit CP at antireflection film.In addition, in antireflection film heat treatment portion 100,101, dispose the local control LC of the temperature of control cooling unit CP and heating unit HP respectively at topmost.

In the etchant resist heat treatment portion 110 of etchant resist with treatment region 11, dispose to stacked on top of one another two heating unit HP and two cooling unit CP, with heat treatment portion 111, dispose to stacked on top of one another two heating unit HP and two cooling unit CP at etchant resist.In addition, in etchant resist heat treatment portion 110,111, dispose the local control LC of the temperature of control cooling unit CP and heating unit HP respectively at topmost.

Development heat treatment portion 120 in development treatment district 12 disposes to stacked on top of one another two heating unit HP and two cooling unit CP, developing with heat treatment portion 121, disposes to stacked on top of one another two heating unit HP and two cooling unit CP.In addition, developing, dispose the local control LC of the temperature of control cooling unit CP and heating unit HP respectively at topmost with heat treatment portion 120,121.

In the against corrosion epiphragma heat treatment portion 130 of epiphragma against corrosion with treatment region 13, dispose to stacked on top of one another two heating unit HP and two cooling unit CP, with heat treatment portion 131, dispose to stacked on top of one another two heating unit HP and two cooling unit CP at epiphragma against corrosion.In addition, in epiphragma against corrosion heat treatment portion 130,131, dispose the local control LC of the temperature of control cooling unit CP and heating unit HP respectively at topmost.

Epiphragma against corrosion is removed district's epiphragma against corrosion of 14 and is removed and use handling part 70a, disposes to stacked on top of one another 3 and removes unit R EM.

Oven dry heat treatment portion 150 after the exposure of washing/drying treatment region 15, dispose to stacked on top of one another two heating unit HP and two cooling unit CP, after exposure oven dry with heat treatment portion 151 stacked on top of one another dispose two heating unit HP, two cooling unit CP and the PASS13 of substrate-placing portion, PASS14.In addition, after exposure, dry, dispose the local control LC of the temperature of control cooling unit CP and heating unit HP respectively at topmost with heat treatment portion 150,151.

In addition, end cleaning unit EC, coating element BARC, RES, COV, washing/drying processing unit SD, remove unit R EM, development treatment cells D VE, heating unit HP and cooling unit CP number can be corresponding to the processing speed in each district and suitably change.

(2) action of substrate board treatment

Below, with reference to Fig. 1～Fig. 3 the action of the substrate board treatment 500 of present embodiment is described.

On the conveyer mounting table 92 in protractor district 9, move into many multistage conveyer C that hold of substrate W.Protractor manipulator IR uses the hand IRH1 of upside to take out the untreated substrate W that is accommodated in the conveyer C.Then, edge ± θ direction rotation was moved when protractor manipulator IR edge ± directions X moved, thus with untreated substrate W mounting to the PASS1 of substrate-placing portion.

In the present embodiment, adopt FOUP (front opening unified pod: front open type unified standard case) as conveyer C, but be not limited in this, (StandardMechanical Inter Face: SMIF) box maybe will hold substrate W and expose externally airborne OC (open cassette: open box) etc. to the open air also can to use SMIF.

Further, at protractor manipulator IR, second～the 8th central robot CR2～CR8 and interface transport mechanism IFR, the straight ejector half carrying manipulator that makes its relative substrate W linear slide respectively and carry out the advance and retreat action of hand, but be not limited in this, also can use by making joint action carry out the multi-joint type carrying manipulator of the advance and retreat action of hand point-blank.

By the substrate W of mounting to the PASS1 of substrate-placing portion, the second central robot CR2 with treatment region 10 accepts by antireflection film.The second central robot CR2 moves into antireflection film with applying handling part 30 with this substrate W.Antireflection film with coating handling part 30 in, the standing wave and the halation that take place when reducing exposure-processed applys the formation antireflection film by coating element BARC on substrate W.

Then, the second central robot CR2 uses coating handling part 30 to take out the substrate W that the coating processing finish from antireflection film, and this substrate W is moved into antireflection film heat treatment portion 100,101.

Then, the second central robot CR2 takes out the substrate W that heat treatments finish from antireflection film with heat treatment portion 100,101, and with this substrate W mounting to the PASS3 of substrate-placing portion.

By the substrate W of mounting to the PASS3 of substrate-placing portion, the 3rd central robot CR3 with treatment region 11 accepts by etchant resist.The 3rd central robot CR3 moves into etchant resist with applying handling part 40 with this substrate W.This etchant resist with coating handling part 40 in, come to be formed with that coating forms etchant resist on the substrate W of antireflection film in coating by coating element RES.

Next, the 3rd central robot CR3 uses coating handling part 40 to take out the substrate W that the coating processing finish from etchant resist, and this substrate W is moved into etchant resist heat treatment portion 110,111.Then, the 3rd central robot CR3 takes out the substrate W that heat treatment finishes from etchant resist with heat treatment portion 110,111, and this substrate W is positioned on the PASS5 of substrate-placing portion.

By the substrate W of mounting to the PASS5 of substrate-placing portion, accept by the 4th central robot CR4 in development treatment district 12.The 4th central robot CR4 with this substrate W mounting to the PASS7 of substrate-placing portion.

By the substrate W of mounting to the PASS7 of substrate-placing portion, the 5th central robot CR5 with treatment region 13 accepts by epiphragma against corrosion.The 5th central robot CR5 moves into epiphragma against corrosion with applying handling part 60 with this substrate W., apply on etchant resist by coating element COV as described above and form epiphragma against corrosion with applying in the handling part 60 at this epiphragma against corrosion.

Then, the 5th central robot CR5 uses coating handling part 60 to take out the substrate W that the coating processing finish from epiphragma against corrosion, and this substrate W is moved into epiphragma against corrosion heat treatment portion 130,131.Then, the 5th central robot CR5 takes out substrate W after the heat treatments from epiphragma against corrosion with heat treatment portion 130,131, and with this substrate W mounting to the PASS9 of substrate-placing portion.

By the substrate W of mounting to the PASS9 of substrate-placing portion, the 6th central robot CR6 that is removed district 14 by epiphragma against corrosion accepts.The 6th central robot CR6 with this substrate W mounting to the PASS11 of substrate-placing portion.

By the substrate W of mounting to the PASS11 of substrate-placing portion, accept by the 7th central robot CR7 of washing/drying treatment region 15.

At this, in the present embodiment, before carrying out exposure-processed, substrate W is implemented end described later clean by exposure device 17.The 7th central robot CR7 moves into the substrate W that receives the end cleaning unit EC of washing/drying handling part 80.The substrate W that is moved in the cleaning unit EC of end is implemented the end clean.

Then, the 7th central robot CR7 takes out the substrate W that the end clean finishes from end cleaning unit EC, and this substrate W is positioned on the PASS13 of substrate-placing portion.

By the substrate W of mounting to the PASS13 of substrate-placing portion, accept by the 8th central robot CR8 of interface area 16.The 8th central robot CR8 moves into the EEW of edge exposure portion with this substrate W.In the EEW of this edge exposure portion, the circumference of substrate W is implemented exposure-processed.

Then, the 8th central robot CR8 takes out the substrate W that the edge exposure processing finishes from the EEW of edge exposure portion, and with this substrate W mounting to the PASS15 of substrate-placing portion.

Moved into portion 17a (with reference to Fig. 1) by interface with the substrate that transport mechanism IFR moves into exposure device 17 to the substrate W on the PASS15 of substrate-placing portion by mounting.

In addition, can not accept at exposure device 17 under the situation of substrate W, substrate W temporarily is received keeping in carrying buffering reservoir SBF.

To after the substrate W enforcement exposure-processed, interface takes out substrate W with transport mechanism IFR from the exposure device 17b (with reference to Fig. 1) of exposure device 17, and moves into the washing/drying handling part 80 of washing/drying treatment region 15 in exposure device 17.In the washing/drying processing unit SD of washing/drying handling part 80, the substrate W after the exposure-processed is cleaned and dried.Detailed content is narrated in the back.

In washing/drying handling part 80, the substrate W after the exposure-processed implemented cleaning and dried after, interface takes out substrate W with transport mechanism IFR from washing/drying handling part 80, and mounting is to the PASS16 of substrate-placing portion.The narration in detail in the back of the action of transport mechanism IFR of interface in the interface area 16.

In addition, barrier waits and temporarily can not clean in washing/drying handling part 80 and during dried for some reason, the substrate W after the exposure-processed temporarily can be held keeping and return buffering reservoir RBF at interface area 16.

By the substrate W of mounting to the PASS16 of substrate-placing portion, accept by the 8th central robot CR8 of interface area 16.The 8th central robot CR8 moves into this substrate W after the exposure of washing/drying treatment region 15 oven dry with heat treatment portion 151.Oven dry is used in the heat treatment portion 151 after exposure, oven dry (PEB) after substrate W is exposed.Then, the 8th central robot CR8 takes out substrate W from the back oven dry of exposing with heat treatment portion 151, and with this substrate W mounting to the PASS14 of substrate-placing portion.

In addition, in the present embodiment, with the heat treatment portion 151 back oven dry that exposes, still, dry after also can exposing with heat treatment portion 150 by the oven dry of exposure back by exposure back oven dry.

Accepted by the 7th central robot CR7 of washing/drying treatment region 15 by the substrate W of mounting to the PASS14 of substrate-placing portion.The 7th central robot CR7 arrives the PASS12 of substrate-placing portion with this substrate W mounting.

By the substrate W of mounting to the DASS12 of substrate-placing portion, the 6th central robot CR6 that is removed district 14 by epiphragma against corrosion accepts.The 6th central robot CR6 moves into epiphragma against corrosion with this substrate W and removes to remove with handling part 70a or epiphragma against corrosion and use handling part 70b.In epiphragma against corrosion is removed with handling part 70a, 70b, remove epiphragma against corrosion on the substrate W by removing unit R EM.

Then, the 6th central robot CR6 removes to remove with handling part 70b with handling part 70a or epiphragma against corrosion from epiphragma against corrosion and takes out the substrate W that processing finishes, and with this substrate W mounting to the PASS10 of substrate-placing portion.

By the substrate W of mounting to the PASS10 of substrate-placing portion, the 5th central robot CR5 with treatment region 13 accepts by epiphragma against corrosion.The 5th central robot CR5 with this substrate W mounting to the PASS8 of substrate-placing portion.

By the substrate W of mounting to the PASS8 of substrate-placing portion, accept by the 4th central robot CR4 in development treatment district 12.The 4th central robot CR4 moves into development treatment portion 50 with this substrate W.In development treatment portion 50, EV carries out development treatment to substrate W by the development treatment cells D.

Then, the 4th central robot CR4 takes out the substrate W that development treatment finishes from development treatment portion 50, and this substrate W is moved into development heat treatment portion 120,121.

Then, the 4th central robot CR4 takes out substrate W after the heat treatments from developing with heat treatment portion 120,121, and with this substrate W mounting to the PASS6 of substrate-placing portion.

By the substrate W of mounting to the PASS6 of substrate-placing portion, the 3rd central robot CR3 with treatment region 11 accepts by etchant resist.The 3rd central robot CR3 with this substrate W mounting to the PASS4 of substrate-placing portion.

By the substrate W of mounting to the PASS4 of substrate-placing portion, the second central robot CR2 with treatment region 10 accepts by antireflection film.The second central robot CR2 with this substrate W mounting to the PASS2 of substrate-placing portion.

By the substrate W of mounting to the PASS2 of substrate-placing portion, the protractor manipulator IR by protractor district 9 is housed in the conveyer C.

(3) about the end cleaning unit

At this,, use accompanying drawing at length to describe at above-mentioned end cleaning unit EC.In addition, the below action of each structural element of Shuo Ming end cleaning unit EC is by master controller (control part) 91 controls of Fig. 1.

(3-a) structure of end cleaning unit

Fig. 4 is the figure that is used to illustrate the structure of end cleaning unit EC.As shown in Figure 4, end cleaning unit EC has rotary chuck 201, and when this rotary chuck 201 was used for level and keeps substrate W, making substrate W was that the center is rotated with the rotating shaft of the vertical at the center by substrate W.

Rotary chuck 201 is fixed on the upper end of the rotating shaft 203 that rotates by chuck rotary drive mechanism 204.In addition, on rotary chuck 201, be formed with air-breathing path (not shown), and by under the state that substrate W is positioned on the rotary chuck 201, carrying out exhaust in to air-breathing path, and with the lower surface vacuum suction of substrate W on rotary chuck 201, thereby substrate W can be kept with flat-hand position.

In addition, the 7th central robot CR7 shown in Figure 1 is with the central part of the substrate W mode mounting substrate W consistent with the axle center of rotary chuck 201.But, under the low situation of the operation precision of the 7th central robot CR7, mounting substrate W under the inconsistent state in axle center of the central part of substrate W and rotary chuck 201 sometimes.When keeping substrate W by rotary chuck 201 in this state, because substrate W is rotated under eccentric state when the clean of the end of substrate W described later, so can not the end R of substrate W be cleaned equably.Therefore, in the present embodiment, before the clean of the end of substrate W, revise the position of substrate W.Detailed content is narrated in the back.

On the side of rotary chuck 201 and the top in the cleaning unit EC of end, be provided with end cleaning device travel mechanism 230.The bar-shaped supporting member 220 that extends downwards is installed in end cleaning device travel mechanism 230.Supporting member 220 moves at above-below direction and horizontal direction by end cleaning device travel mechanism 230.

In the bottom of supporting member 220, the end cleaning device 210 with general cylindrical shape shape is installed in the mode of extending in the horizontal direction.Thus, end cleaning device 210 moves by end cleaning device travel mechanism 230 with supporting member 220.

Thus, the end R of an end of end cleaning device 210 and substrate W relative to.In the following description, with end cleaning device 210 relative with end R substrate W to an end be made as the front.

Here, at the definition of the above-mentioned end R of substrate W, describe with reference to following accompanying drawing.

Fig. 5 is the generalized schematic that is used to illustrate the end R of substrate W.As shown in Figure 5, on substrate W, be formed with above-mentioned antireflection film, etchant resist (all not having diagram) and epiphragma against corrosion.

Substrate W has end face, if roughly illustrate this end face, then as shown in Figure 5.This end face is commonly called inclined-plane (ベ ベ Le) portion.In addition, will be formed with epiphragma against corrosion substrate W face from the end to the inside to being commonly referred to circumference apart from the zone till the d.In the present embodiment, above-mentioned inclined plane part and circumference are generically and collectively referred to as end R.In addition, above-mentioned for example is 2～3mm apart from d.In addition, end R also can not comprise circumference.At this moment, cleaning unit EC in end only cleans the inclined plane part of substrate W.

Usually, mostly epiphragma against corrosion is in the mode of the above-mentioned circumference of covered substrate W not and forms.That is, one or two that are formed on the antireflection film of the circumference on the substrate W and etchant resist are in the state that exposes.

Turn back to Fig. 4, end cleaning device 210 when substrate W is carried out the end clean, is moved near the position the end R of the substrate W on the rotary chuck 201 by end cleaning device travel mechanism 230, and during the end clean is carried out at the end, standby above leading arm 252 described later.

End cleaning device 210 portion within it has space (purge chamber 211 described later).Be connected with cleaning solution supplying pipe 241 and blast pipe 244 at end cleaning device 210.Cleaning solution supplying pipe 241 is connected with not shown cleaning feed system by valve 242.By opening valve 242, cleaning fluid is fed into the inner space of end cleaning device 210 by cleaning solution supplying pipe 241.

In addition, blast pipe 244 is connected with exhaust portion 245.The environmental gas that exhaust portion 245 attracts the inner space of end cleaning device 210 carries out exhaust by blast pipe 244.Detailed content about end cleaning device 210 is narrated in the back.

Arranged outside at rotary chuck 201 has 1 pair of leading arm 251,252.The substrate W that leading arm 251,252 is kept by rotary chuck 201 with clamping and mutually relatively to mode dispose.

Leading arm 251,252 is being supported by the supporting member 253,254 that extends downwards.Supporting member 253,254 moves in the horizontal direction by arm travel mechanism 255,256.Be accompanied by moving of supporting member 253,254, leading arm 251,252 is moving near the direction of substrate W or away from the direction of substrate W respectively.In addition, leading arm 251,252 is called position of readiness from the peripheral part position farthest of substrate W.

At this, the shape of leading arm 251,252 and the detailed content of action are described with reference to Fig. 6.The vertical view of representing to have leading arm 251,252 and substrate W at Fig. 6.

Shown in Fig. 6 (a)～Fig. 6 (c), leading arm 251 has the semicircular cylinder shape, and its inboard face 251a is with along the mode of the circular arc of substrate W and form.Leading arm 252 has the shape identical with leading arm 251, and inboard face 252a is to form along the mode of the circular arc of substrate W.Leading arm 251,252 is center and symmetrical mode disposes with the axle center P 1 of rotary chuck 201.In addition, the axle center P1 of rotary chuck 201 is identical with the axle center of rotating shaft 203 (Fig. 4).

Then, the action at leading arm 251,252 describes.

At first, shown in Fig. 6 (a), be under the state of the axle center of rotary chuck 201 P1 position of readiness farthest, by the 7th central robot CR7 substrate W is moved in the cleaning unit EC of end, and mounting be to rotary chuck 201 at leading arm 251,252.

Then, shown in Fig. 6 (b), leading arm 251,252 moves to the axle center of rotary chuck 201 P1 with the speed that equates mutually.At this moment, under the situation that the axle center P1 of the relative rotary chuck 201 of the central part W1 of substrate W departs from, by at least one the promotion substrate W in the leading arm 251,252.Thus, with the center of substrate W near the mode (with reference to the arrow M1 of Fig. 6 (b)) of the axle center P1 of rotary chuck 201 moving substrate W.

Then, shown in Fig. 6 (c), when leading arm 251,252 when the axle center of rotary chuck 201 P1 moves, substrate W is in the state that is directed to arm 251,252 clampings, the center W1 of substrate W is consistent with the axle center P1 of rotary chuck 201.

Like this, revise the position of substrate W, make that the center W1 of substrate W is consistent with the axle center P1 of rotary chuck 201 by leading arm 251,252.

In addition, the action of above-mentioned leading arm 251,252 is carried out under the state of standby above the leading arm 252 at end cleaning device 210 shown in Figure 4.

Then, the detailed content to end cleaning device 210 describes.Fig. 7 is the figure of structure of end cleaning device 210 that is used for the end cleaning unit EC of key diagram 4.At Fig. 7 (a) sectional arrangement drawing of end cleaning device 210 is shown, the front view of end cleaning device 210 is shown at Fig. 7 (b).

Shown in Fig. 7 (a), be formed with purge chamber 211 in the inside of the housing 210a of the general cylindrical shape shape of end cleaning device 210.

Shown in Fig. 7 (a) and Fig. 7 (b),, be formed with the opening 212 that makes purge chamber 211 and external communications in the face side of housing 210a.Opening 212 has circular-arc upper surface and lower surface, so that from central portion to two side, width enlarges gradually up and down.When substrate W is carried out the end clean, insert the end R that is adsorbed the substrate W that remains on the rotary chuck 201 at opening 212.

In purge chamber 211, dispose cleaning brush 213 with general cylindrical shape shape in the mode of extending in vertical.Cleaning brush 213 is installed on the rotating shaft 214 that vertical is extended.The upper end of rotating shaft 214 and lower end rotatably are installed on the swivel bearing of the top that is formed at purge chamber 211 and bottom.Thus, cleaning brush 213 rotatably is cleaned chamber 211 and rotating shaft 214 supports.

When substrate W was carried out the end clean, the end R of the substrate W of rotation contacted with cleaning brush 213.Thus, the end R of substrate W is cleaned brush 213 cleanings.

At this, in the cleaning unit EC of the end of Fig. 4, the rotating shaft 214 that cleaning brush 213 is installed is to dispose with the mode of rotating shaft 203 almost parallels of fixing rotary chuck 201.Thus, cleaning brush 213 is to be rotated under the state of contact reliably at the end R with the substrate W that rotates.

Connecting above-mentioned cleaning solution supplying pipe 241 and blast pipe 244 on the top of end cleaning device 210.

Cleaning solution supplying pipe 241 cleaning solution supplying path 241a, the 241b interior with being formed at housing 210a is connected.Shown in Fig. 7 (a), cleaning solution supplying path 241a extends to the upper inside surface of purge chamber 211 always from the outside of housing 210a.In addition, cleaning solution supplying path 241b extends to the lower inner surface of purge chamber 211 always from the outside of housing 210a.The part of cleaning solution supplying path 241b only is shown at Fig. 7 (a).

By such formation, when substrate W is carried out the end clean, be fed into cleaning fluid injection of the end R towards the substrate W that in purge chamber 211, contacts of end cleaning device 210 from above-below direction with cleaning brush 213.Thus, the end R of cleaning base plate W effectively.

The hole portion on the top of blast pipe 244 by being arranged on housing 210a is inserted in the purge chamber 211.Thus, as mentioned above, the environmental gas in the purge chamber 211 is attracted by the exhaust portion 245 of Fig. 4, comes exhaust by blast pipe 244.

Like this, in purge chamber 211, because its internal environment gas is by exhaust portion 245 discharges, so the droplet of cleaning fluid that evaporates and cleaning fluid can be discharged from effectively.

As mentioned above, as supplying to end cleaning device 210 and, can adopt any of the liquid that is used for immersion method in the mixed liquor of resist solvent, fluorine class soup, ammonia and hydrogen peroxide of regulation and the exposure device to the cleaning fluid that the end of substrate W R sprays.

In addition, as cleaning fluid, also can use any in the mixed liquor of for example pure water, the liquid that in pure water, has dissolved complex compound (material after the ionization) or pure water, carbonated water, hydrogeneous water, electrolytic ionic water, HFE (hydrogen fluorine ether), fluoric acid, sulfuric acid and sulfuric acid and hydrogen peroxide.

(3-b) other structure example of end cleaning unit

End cleaning unit EC can have following structure.Fig. 8 is the figure that is used to illustrate other structure example of end cleaning unit EC.Fig. 8 (a) is the end view of other structure example of expression end cleaning unit EC, and Fig. 8 (b) is the vertical view of a part of the end cleaning unit EC of Fig. 8 (a).About the end cleaning unit EC of Fig. 8, the point different with the end cleaning unit EC of Fig. 4 is described.

Shown in Fig. 8 (a) and Fig. 8 (b),, be provided with the correction pin 261 more than 3 that extends along vertical in the side of rotating shaft 203 and rotary chuck 201.In the present embodiment, be provided with 3 and revise pin 261.Revise pin 261 axle center P1 and be the center and dispose at interval with equal angles roughly with rotary chuck 201.In addition, 3 correction pins 261 can be whole mobile at above-below direction and horizontal direction by pin drive unit 262.

In addition, in the outside of revising pin 261 and near, be provided with 4 eccentricity sensors 263 by the end R of the substrate W of mounting to the rotary chuck 201.4 eccentricity sensors 263 are the center with the axle center P1 of rotary chuck 201 and dispose at interval with mutual equal angles.

Eccentricity sensor 263 detects the position of the breach of the offset of axle center P1 of the relative rotary chuck 201 of substrate W and substrate W, provides eccentric signal EI and gap position signal NP to the local control 250 of the action of control end cleaning unit EC.At this, the breach of substrate W is meant in order to judge the breach that forms at the end of substrate W R towards waiting of substrate W easily.In addition, as eccentricity sensor 263, can use for example CCD (charge coupled device) linear transducer.

In addition, the feed system and the gas extraction system of end cleaning device 210, supporting member 220, end cleaning device travel mechanism 230, cleaning fluid have the same 26S Proteasome Structure and Function of end cleaning unit EC with Fig. 4.

In the cleaning unit EC of the end of Fig. 8, when detecting the offset of substrate W, revise the position of substrate W by revising pin 261 by eccentricity sensor 263.

At this,, describe at the correction of the position of the substrate W among the end cleaning unit EC of Fig. 8 with reference to Fig. 9.Fig. 9 is the flow chart of the example controlled by 250 pairs of ends of local control cleaning unit EC of expression.

As shown in Figure 9, local control 250 is moved substrate W in the cleaning unit EC of end (step S1) to by the 7th central robot CR7.The substrate W that is moved in the cleaning unit EC of end is kept by rotary chuck 201.Then, local control 250 makes rotating shaft 203 begin rotation by utilizing chuck rotary drive mechanism 204, thereby makes the substrate W that is maintained on the rotary chuck 201 begin rotation (step S2).

Then, local control 250 is based on the eccentric signal EI that is provided from eccentricity sensor 263, and whether the offset in the axle center of judgement substrate W relative rotation axi 203 is greater than threshold value (step S3).

At step S3, the offset in the axle center of substrate W relative rotation axi 203 is threshold value when following, and local control 250 carries out end clean (step S4) by end cleaning device 210 (Fig. 4) to substrate W.About the end clean of the substrate W among the step S4, identical with the end clean of substrate W among the end cleaning unit EC of Fig. 4.

Then, local control 250 is taken out of substrate W (step S5) by the 7th central robot CR7 from end cleaning unit EC, turns back to the processing of step S1.

In step S3, at the offset in the axle center of substrate W relative rotation axi 203 during greater than threshold value, by utilizing chuck rotary drive mechanism 204 axle 203 the rotation of stopping the rotation, thereby when stopping the rotation of substrate W (step S6), remove the maintenance of 201 couples of substrate W of rotary chuck.

Then, local control 250 calculates the position correction condition (step S7) of substrate W based on eccentric signal EI and gap position signal NP.At this, the position correction condition of substrate W is the mobile condition that is used to make the center W1 (Fig. 6) of the substrate W substrate W consistent with the axis P1 (Fig. 6) of rotary chuck 201, comprises moving direction and the displacement of substrate W.

Then, based on the result of calculation of the position correction condition of the substrate W among the step S6, local control 250 utilizes revises the position (step S8) that pin 261 is revised substrate W.Particularly, revise pin 261 for 3 and move up integratedly, substrate W is being carried out supported at three point.Then, revise pin 261 and move in the horizontal direction, make that the center W1 (Fig. 6) of substrate W is consistent with the axle center P1 (Fig. 6) of rotary chuck 201.Then, move down substrate W is positioned on the rotary chuck 201 by revising pin 261, thereby keep substrate W by rotary chuck 201.Thus, revise the position of substrate W.Then, turn back to the processing of step S2.

In addition, in step S8, also can replace the position of revising pin 261 and revising substrate W by the 7th central robot CR.At this moment, do not revise pin 261 and pin drive unit 262 owing to do not need to be provided with, so miniaturization and the lightweight of end cleaning unit EC become possibility.

In addition, in example shown in Figure 8, in the cleaning unit EC of end, be provided with 4 eccentricity sensors 263, but the quantity of eccentricity sensor 263 also can be according to the size of substrate W etc. and suitably change.

In addition, in example shown in Figure 8, under the state that substrate W has been rotated, detect the offset of substrate W, but also can under the state that substrate W has been stopped the rotation, detect the offset of substrate W.But, the quantity of the eccentricity sensor 263 in being set at end cleaning unit EC for example is under 1 or two s' the situation, when detecting under the state that substrate W has been stopped the rotation, the direction because of substrate W off-centre can not detect correct offset sometimes.Therefore, preferred, the quantity of the eccentricity sensor 263 in being set at end cleaning unit EC for example is under 1 or two s' the situation, under the state that substrate W has been rotated, detects the offset of substrate W.

(3-c) the another structure example of end cleaning unit EC

End cleaning unit EC can also have following structure.Figure 10 is the figure that is used to illustrate the another structure example of end cleaning unit EC.Figure 10 (a) is the end view of another structure example of expression end cleaning unit EC, and Figure 10 (b) is the vertical view of a part of the end cleaning unit EC of Figure 10 (a).About the end cleaning unit EC of Figure 10, the point different with the end cleaning unit EC of Fig. 4 is described.

Shown in Figure 10 (a) and Figure 10 (b), the supporting pin 217P more than 3 with mutually roughly equal angles dispose at interval so that surround rotation rotating shaft 203 and rotary chuck 201.In this example, be provided with 4 supporting pin 271P.

These 4 supporting pin 271P, bottom is separately kept by circular pin retaining member 271, and is that square neck is oblique laterally and obliquely at the center with rotating shaft 203.In addition, the diameter of the border circular areas that the bottom of 4 supporting pin 271P surrounds is smaller or equal to the diameter of substrate W, and the diameter of the border circular areas that the upper end of 4 supporting pin 271P surrounds is greater than the diameter of substrate W.

Pin retaining member 271 is installed on the lifting shaft 272.Pin drive unit 273 makes lifting shaft 272 carry out lifting action by local control 250 controls.Thus, 4 supporting pin 271P rise and descend with pin retaining member 271.

With surround 4 supporting pin 271P and pin retaining member 271 around mode be provided with the processing cup 282 that is used to prevent the roughly tubular that the cleaning fluid from substrate W disperses laterally.

Handling cup 282 is installed on the lifting shaft 283 of glass drive unit 284.Cup drive unit 284 makes lifting shaft 283 carry out lifting action by local control 250 controls.

Thus, handle cup 282 the discharge opeing of the end R that surrounds the substrate W that keeps by rotary chuck 201 reclaim the position and, rotary chuck 201 below position of readiness between rise and descend.

When substrate W was carried out the end clean, when processing cup 282 rose to discharge opeing recovery position, end cleaning device 210 moved to the inboard of handling cup 282, and shown in Figure 10 (b), the end R of cleaning brush 213 and substrate W connects.

Under this state,, wander the below along the inner surface of handling cup 282 from the cleaning fluid that substrate W disperses by the end R of end cleaning device 210 cleaning base plate W.The cleaning fluid of having wandered is discharged to the outside by the drainage system on the bottom surface that is formed at end cleaning unit EC 285.

Lifting action and effect thereof at 4 supporting pin 271P and processing cup 282 are described in detail.Figure 11 and Figure 12 are used for illustrating the 4 supporting pin 271P of end cleaning unit EC of Figure 10 and the figure that handles the lifting action of cup 282.

Shown in Figure 11 (a), when end cleaning unit EC moves into substrate W, earlier with substrate W mounting to rotary chuck 201.At this moment, 4 supporting pin 271P and handle the position of readiness that cup 282 all is in rotary chuck 201 belows.

Shown in Figure 11 (b), when substrate W by mounting to rotary chuck 201 time, when pin supporting member 271 rises (arrow P N1), handle cup 282 also rise (arrow P N2).

At this, as mentioned above, 4 supporting pin 271P are that square neck is oblique laterally and obliquely at the center with rotating shaft 203.In addition, the diameter of the border circular areas of 4 supporting pin 271P encirclements enlarges from bottom to up gradually.

Thus, under the center of substrate W W1 (Fig. 6) situation consistent with the axle center P1 (Fig. 6) of rotary chuck 201, when 4 supporting pin 271P rose, the end R of substrate W almost abutted to 4 supporting pin 271P simultaneously.And substrate W is lifted by 4 supporting pin 271P.

On the other hand, under the inconsistent situation of axle center P1 (Fig. 6) of the center W1 (Fig. 6) of substrate W and rotary chuck 201, when 4 supporting pin 271P rose, at first, the end R of substrate W abutted to any 1～3 supporting pin 271P among 4 supporting pin 271P.

At this moment, follow the rising of supporting pin 271P, with the end R of the substrate W of supporting pin 271P butt when supporting pin 271P slides, move in the horizontal direction towards rotating shaft 203.

Further rise by 4 supporting pin 271P, thus the end R butt of 4 supporting pin 271P and substrate W, and the center W1 of substrate W is consistent with the axle center P1 of rotary chuck 201.And substrate W is lifted by 4 supporting pin 271P.

Then, shown in Figure 11 (c), 4 supporting pin 271P declines (arrow P N3).Thus, shown in Figure 12 (d), 4 supporting pin 271P turn back to position of readiness, the center of substrate W W1 consistent with the axle center P1 of rotary chuck 201 state under, substrate W by mounting to rotary chuck 201.Under this state, substrate W is rotated chuck 201 absorption and keeps.Then, the end cleaning device 210 of Figure 10 moves to be handled in the cup 282, and substrate W is carried out the end clean.

When the end of substrate W clean finishes, shown in Figure 12 (e), handle cup 282 and descend (arrow P N5) 4 supporting pin 271P risings (arrow P N4).Thus, lift substrate W.

Substrate W by 4 supporting pin 271P lift by the hand CRH11 acceptance of Fig. 1, is taken out of the outside of end cleaning unit EC.At last, shown in Figure 12 (f), 4 supporting pin 271P drop to position of readiness (arrow P N6).

As mentioned above, in this routine end cleaning unit EC, carry out lifting action, and can and easily revise the position of substrate W with simple structure by 4 supporting pin 271P.Thus, can be correctly, reliably substrate W is carried out the end clean.

(3-d) the another structure example of end cleaning unit

End cleaning unit EC can also have following structure.Figure 13 is the figure that is used to illustrate the another structure example of end cleaning unit EC.Figure 13 (a) is the end view of another structure example of expression end cleaning unit EC, and Figure 13 (b) is the vertical view of a part of the end cleaning unit EC of Figure 13 (a).About the end cleaning unit EC of Figure 13, the point different with the end cleaning unit EC of Fig. 4 is described.

Shown in Figure 13 (a) and Figure 13 (b), above rotary chuck 201, near the end R of the substrate W that keeps by rotary chuck 201, dispose video camera 290.Video camera 290 for example is a ccd video camera, takes the end R of the substrate W that is kept by rotary chuck 201 from the top.The image that is obtained by video camera 290 offers local control 250 as electric signal.

Chuck rotary drive mechanism 204 comprises motor and encoder.Local control 250 detects the anglec of rotation of (0 degree) from the reference position of the rotating shaft 203 that driven by the motor rotation based on the output signal of encoder.

Shown in Figure 13 (b), when substrate W is carried out the end clean, video camera 290 and end cleaning device 210 across the axle center of rotary chuck 201 P1 and relative to.

Under the center of the substrate W W1 situation consistent with the axle center P1 of rotary chuck 201, the end R of substrate W follows the rotation of substrate W and invariant position on the horizontal line at the center of the cleaning brush 213 of axle center P1 that connects rotary chuck 201 and end cleaning device 210.

On the other hand, under the inconsistent situation of the axle center P1 of the center of substrate W W1 and rotary chuck 201, the end R of substrate W follows the rotation of substrate W and displacement on the horizontal line at the center of the cleaning brush 213 of axle center P1 that connects rotary chuck 201 and end cleaning device 210.At this moment, the addendum modification of end R changes according to the anglec of rotation of rotary chuck 201.

In the following description, the horizontal line at center that connects the cleaning brush 213 of the axle center P1 of rotary chuck 201 and end cleaning device 210 is called eccentricity detecting line EL.

Local control 250 is based on the image that is provided by video camera 290, detects the relation of the anglec of rotation of the addendum modification of end R of the substrate W on eccentricity detecting line EL and rotary chuck 201.

Further, local control 250 moves end cleaning device 210 based on the relation of the anglec of rotation of the addendum modification of end R and rotary chuck 201 by end cleaning device travel mechanism 230 on eccentricity detecting line EL.

Particularly, local control 250 is by making substrate W rotation, based on the image that is provided by video camera 290, detect from the relation of the addendum modification of the anglec of rotation of the benchmark angle of rotary chuck 201 and the end R on eccentricity detecting line EL, and store this relation.

Local control 250, based in the rotary course of substrate W, the anglec of rotation and the addendum modification of storage move end cleaning device 210 in real time on eccentricity detecting line EL, so that the relative position (with reference to the arrow of Figure 13 (b)) at the center of the pivot of maintenance substrate W and cleaning brush 213.

Thus, though the axle center of rotary chuck 201 P1 be positioned under the inconsistent situation of center W1 of the substrate W on the rotary chuck 201, also can keep necessarily at the entire circumference of substrate W contact condition with the cleaning brush 213 of end R and end cleaning device 210.Consequently, can evenly and correctly carry out the end clean in the entire circumference of substrate W to substrate W.

(3-e) the another structure example of end cleaning unit

End cleaning unit EC can also have following structure.Figure 14 is the figure that is used to illustrate the another structure example of end cleaning unit EC.Figure 14 (a) is the end view of another structure example of expression end cleaning unit EC, and Figure 14 (b) is the vertical view of a part of the end cleaning unit EC of Figure 14 (a).About the end cleaning unit EC of Figure 14, the point different with the end cleaning unit EC of Figure 13 is described.

At this, rotary chuck 201, rotating shaft 203 and the chuck rotary drive mechanism 204 that constitutes this routine end cleaning unit EC is called substrate rotating mechanism 209.At this routine end cleaning unit EC, be provided with the rotating mechanism mobile device 291 that substrate rotating mechanism 209 and eccentricity detecting line EL are moved abreast.

Local control 250 makes substrate W rotation under the state that substrate rotating mechanism 209 is fixed.Thus, based on the image that provides from video camera 290, detect from the relation of the addendum modification of the anglec of rotation of the benchmark angle of rotary chuck 201 and the end R on eccentricity detecting line EL, and store this relation.

Local control 250, based in the rotary course of substrate W, the anglec of rotation and the addendum modification of storage, substrate rotating mechanism 209 is moved in real time, so that the relative position (distance) (with reference to the arrow of Figure 14 (b)) at the center of the pivot of maintenance substrate W and cleaning brush 213 on eccentricity detecting line EL.

Thus, can be in the entire circumference of substrate W, the contact condition of the cleaning brush 213 of end R and end cleaning device 210 is kept certain.Consequently, can evenly and correctly carry out the end clean in the entire circumference of substrate W to substrate W.

(3-f) the another structure example of end cleaning unit

End cleaning unit EC can also have following structure.Figure 15 is the figure that is used to illustrate the another structure example of end cleaning unit EC.About the end cleaning unit EC of Figure 15, the point different with the end cleaning unit EC of Fig. 4 is described.

As shown in figure 15, in this routine end cleaning unit EC, in treatment chamber CH, dispose rotary chuck 201, rotating shaft 203, chuck rotary drive mechanism 204, end cleaning device 210 and end cleaning device travel mechanism 230.

In addition, the end cleaning unit EC of the configuration of these structural portion in treatment chamber CH and Fig. 4 is identical.In addition, different with the end cleaning unit EC of Fig. 4, at this routine end cleaning unit EC leading arm 251,252 is not set.

Be formed with in the side of treatment chamber CH and be used for peristome ECO from end cleaning unit EC to end cleaning unit EC that move into substrate W and take out of substrate W from.In the side of peristome ECO, be provided with gate SH that can open and close peristome ECO and the gate driving device SHM that drives this gate.

Open peristome ECO by gate SH, thereby can carry out moving into substrate W and in the cleaning unit EC of end, taking out of substrate W to the outside from the outside to end cleaning unit EC.The hand CRH11 that the 7th central robot CR7 by Fig. 1 has that moves into and take out of of substrate W carries out.

And then, be provided with the light-projecting portion 276a of photoelectric sensor 276 on the top of the peristome ECO of the side of treatment chamber CH.Be provided with the light accepting part 276b of photoelectric sensor 276 in the place of the regulation of the upper surface of hand CRH11.Light-projecting portion 276a is for example along the vertical projection light towards the bottom surface of treatment chamber CH.

The light-projecting portion 276a of photoelectric sensor 276 and light accepting part 276b are connected with local control 250.Local control 250 when end cleaning unit EC moves into substrate W, makes the light projection from light-projecting portion 276a.

Light accepting part 276b offers local control 250 in the light time that receives from light-projecting portion 276a with the signal (hereinafter referred to as being subjected to light signal) that has received this incident of light.

In the action of each structural portion of local control 250 in control end cleaning unit EC, the also action of the 7th central robot CR7 of control chart 1.Action about by the hand CRH11 of local control 250 control describes based on Figure 16.

Figure 16 is the figure of action that is used to illustrate the hand CRH11 of the Figure 15 when end cleaning unit EC moves into substrate W.In addition, in Figure 16, represent the part (the light-projecting portion 276a of Figure 15 and rotary chuck 201) of the structure of hand CRH11 and end cleaning unit EC with vertical view.

In Figure 16 (a), as shown by arrows, the substrate W that is kept by hand CRH11 is moved in the cleaning unit EC of end.The position relation of hand CRH11 and rotary chuck 201 is set in advance.

But the position of hand CRH11 can be from predefined position deviation sometimes.Thus, shown in Figure 16 (b), moved into the substrate W of end cleaning unit EC, under the state that the center of substrate W W1 departs from from the axle center P1 of rotary chuck 201, by mounting to rotary chuck 201.

At this moment, do not accepted from the light of light-projecting portion 276a projection by light accepting part 276b.Therefore, do not provide to local control 250 and be subjected to light signal from light accepting part 276b.

Therefore, shown in Figure 16 (c), local control 250 moves hand CRH11 in horizontal plane, be subjected to light signal up to providing from light accepting part 276b.When providing when being subjected to light signal, local control 250 stops to move of hand CRH11, and makes substrate W mounting to rotary chuck 201.

Thus, the axle center P1 of rotary chuck 201 is consistent with the center W1 of substrate W.Thereby, when substrate W is carried out the end clean, can be in the entire circumference of substrate W, the contact condition of the cleaning brush 213 of end R and end cleaning device 210 is kept certain.Consequently, can evenly and correctly carry out the end clean in the entire circumference of substrate W to substrate W.

In addition, be used to make center W1 the be subjected to optical sensor 276 consistent of substrate W also can be arranged on the end cleaning unit EC of Fig. 4, Fig. 8, Figure 10, Figure 13 and Figure 14 with the axle center P1 of rotary chuck 201.

At this moment, control the action of hand CRH11 by local control 250, thereby can prevent the off-centre of substrate W more fully.

(3-g) the another structure example of end cleaning unit

End cleaning unit EC can also have following structure.Figure 17 is the figure that is used to illustrate the another structure example of end cleaning unit EC.About the end cleaning unit EC of Figure 17, the point different with the end cleaning unit EC of Fig. 4 is described.

As shown in figure 17, the arranged outside at rotary chuck 201 has motor 301.Connecting rotation axis 302 at motor 301.In addition, connecting arm 303 in the mode of extending in the horizontal direction, be provided with second fluid nozzle 310 at the front end of arm 303 at rotation axis 302.The fluid-mixing that these second fluid nozzle 310 ejections are made of gas and liquid.Detailed content is narrated in the back.

In addition, at the leading section of arm 303, the surface of the substrate W that second fluid nozzle 310 is kept by rotary chuck 201 relatively is mounted in the mode that tilts.

When beginning that substrate W carried out the end clean, making rotation axis 302 rotations by motor 301 when, arm 303 rotates.Thus, second fluid nozzle 310 moves to the top of the end R of the substrate W that is kept by rotary chuck 201.Consequently, the end R of the 310a of ejection portion of the fluid-mixing of second fluid nozzle 310 and substrate W relative to.

Mode with the inside by motor 301, rotation axis 302 and arm 303 is provided with cleaning solution supplying pipe 331.Cleaning solution supplying pipe 331, the one end is connected with second fluid nozzle 310, and its other end is connected with not shown cleaning solution supplying system via valve 332.By opening valve 332, thereby cleaning fluid is fed into second fluid nozzle 310 by cleaning solution supplying pipe 331.In addition, in this example, as cleaning fluid, for example adopt pure water, but, also can replace pure water, and adopt mixed liquor any of the liquid, fluoric acid, sulfuric acid and the sulfuric acid that are used for immersion method in the mixed liquor of resist solvent, fluorine class soup, ammonia and hydrogen peroxide of regulation and the exposure device 17 and hydrogen peroxide.

In addition, be connected with an end of cleaning solution supplying pipe 331 and gas supply pipe 341 at second fluid nozzle 310.The other end of gas supply pipe 341 is connected with not shown gas supply system via valve 342.By opening valve 342, thereby gas is fed into second fluid nozzle 310.In addition, in this example, adopt nitrogen gas (N as the gas that is fed into second fluid nozzle 310 ₂), still, also can replace nitrogen gas (N ₂) and adopt other inert gases such as argon gas or helium atmosphere.

When substrate W was carried out the end clean, cleaning fluid and gas were fed into second fluid nozzle 310.Thus, fluid-mixing is ejected on the end R of rotating substrate W from second fluid nozzle 310.Thereby, the end R of cleaning base plate W well.

And then, in the present embodiment, in the cleaning unit EC of end, be provided with and have the structure identical and the second fluid nozzle 310b of function with above-mentioned second fluid nozzle 310.This second fluid nozzle 310b with relative with the back side of the substrate W that keeps by rotary chuck 201 to and relatively the mode that tilts of the back side of substrate W install.In addition, second fluid nozzle 310b has the 310c of ejection portion of ejection fluid-mixing, and is installed on the not shown arm.

Like this, by with relative with the surface of substrate W and the back side to mode second fluid nozzle 310,310b are set, thereby the end R of cleaning base plate W reliably.In addition, each feed system of the cleaning fluid of second fluid nozzle 310b and gas is because identical with second fluid nozzle 310, the Therefore, omited explanation.

In addition, similarly be provided with leading arm 251,252, supporting member 253,254 and arm travel mechanism 255,256 at the end of the end of Figure 17 cleaning unit EC and Fig. 4 cleaning unit EC.They have structure and the function identical with the end cleaning unit EC of Fig. 4.Thereby by mounting to rotary chuck 201 time, the position of substrate W is revised by leading arm 251,252 at substrate W.

In addition, also can replace leading arm 251,252, supporting member 253,254 and arm travel mechanism 255,256 and be provided with correction pin 261, pin drive unit 262 and the eccentricity sensor 263 of Fig. 8, also can be provided with 4 supporting pin 271P, pin retaining member 271 and the pin drive unit 273 of Figure 10.Also can be provided with the video camera 290 of Figure 13, also can be provided with video camera 290 and the rotating mechanism mobile device 291 of Figure 14.

And then, also can replace leading arm 251,252, supporting member 253,254 and arm travel mechanism 255,256, and, be provided with light accepting part 276b at hand CRH11 at the light-projecting portion 276a that the end of Figure 17 cleaning unit EC is provided with Figure 15.

One example of the internal structure of second fluid nozzle 310 then, is described.In addition, the internal structure of second fluid nozzle 310b is because identical with the internal structure of second fluid nozzle 310, the Therefore, omited explanation.

Figure 18 is the sectional arrangement drawing of an example of the internal structure of the expression second fluid nozzle 310 that is used for the end clean.

Second fluid nozzle 310 shown in Figure 180 is called as external mix type.The second fluid nozzle 310 of external mix type shown in Figure 180 is made of inside subject portion 311 and outer body portion 312.Inside subject portion 311 is made of for example quartz etc., and outer body portion 312 is made of the fluororesin of for example PTFE (polytetrafluoroethylene) etc.

Central shaft along inside subject portion 311 is formed with pure water introduction part 311b.The cleaning solution supplying pipe 331 of Figure 17 is installed on pure water introduction part 311b.Thus, the pure water of being supplied with from cleaning solution supplying pipe 331 is directed to the pure water introduction part 311b.

Be formed with the pure water ejiction opening 311a that is communicated with pure water introduction part 311b in the lower end of inside subject portion 311.Inside subject portion 311 is inserted in the outer body portion 312.In addition, the upper end of inside subject portion 311 and outer body portion 312 is bonded with each other, and the lower end is not engaged.

Between inside subject portion 311 and outer body portion 312, be formed with gas cylindraceous by the 312b of portion.Externally the lower end of main part 312 is formed with the gas vent 312a that is connected by the 312b of portion with gas.Externally on the perisporium of main part 312, the gas supply pipe 341 of Figure 17 to be installed with the mode that gas is communicated with by the 312b of portion.Thus, the nitrogen gas (N that supplies with from gas supply pipe 341 ₂) be directed to gas by the 312b of portion.

Gas is by the 312b of portion, and near gas vent 312a, its diameter is more little downwards.Consequently, nitrogen gas (N ₂) flow velocity be accelerated, spray from gas vent 312a.

In this second fluid nozzle 310, from the pure water and the nitrogen gas (N that sprays from gas vent 312a of pure water ejiction opening 311a ejection ₂) near the lower end of second fluid nozzle 310 external mix, and generate the vaporific fluid-mixing N of the fine liquid drops that contains pure water.

As mentioned above, when substrate W is carried out the end clean, by vaporific fluid-mixing N being ejected into the end R of substrate W, the end R of substrate W is cleaned.

In addition, in the cleaning unit EC of the end of Figure 17, can replace the second fluid nozzle 310 of Figure 18 and adopt the second fluid nozzle 310 that generates the internal mix type of fluid-mixing N in the inside of nozzle body.Other examples to the internal structure of second fluid nozzle 310 describe.

Figure 19 is other routine sectional arrangement drawings that expression is used for the internal structure of the second fluid nozzle 310 that the end clean uses.Second fluid nozzle 310 shown in Figure 19 is called as internal mix type.

The second fluid nozzle 310 of internal mix type shown in Figure 19 is made of gas introduction tube 333 and main part 334.Main part 334 is made of for example quartz, and gas introduction tube 333 is made of for example PTFE.

Be formed with the gas introduction part 333a that is communicated to the lower end from the upper end at gas introduction tube 333.The gas supply pipe 341 of Figure 17 is installed in the upper end of gas introduction tube 333 in addition.Thus, the nitrogen gas of supplying with from gas supply pipe 341 is imported into gas introduction part 333a.

Main part 334 is made of diameter big top tube 334a, tapered portion 334b and the little bottom tube 334c of diameter.

In top tube 334a and tapered portion 334b, form mixing chamber 334d, in the tube 334c of bottom, form the direct current 334e of portion.Lower end at bottom tube 334c forms the fluid-mixing ejiction opening 334f that is connected with the 334e of direct current portion.

At the top of main part 334 tube 334a, the cleaning solution supplying pipe 331 of Figure 17 is installed in the mode that is connected with mixing chamber 334d.Thus, the pure water of supplying with from cleaning solution supplying pipe 331 is imported into mixing chamber 334d.The bottom of gas introduction tube 333 is inserted in the mixing chamber 334d of top tube 334a of main part 334.

In the second fluid nozzle 310 of the internal mix type of Figure 19, as the nitrogen gas (N that supplies with pressurized from gas introduction part 333a ₂) and when cleaning solution supplying pipe 331 is supplied with pure water, nitrogen gas (N in mixing chamber 334d ₂) and pure water mixed, thereby generate the vaporific fluid-mixing N of the fine liquid drops contain pure water.

The fluid-mixing N that generates in mixing chamber 334d is accelerated by the 334e of direct current portion along tapered portion 334b.The fluid-mixing N that is accelerated is ejected into the end R of substrate W from fluid-mixing ejiction opening 334f.Thereby, the end R of substrate W is cleaned.

(3-h) the another structure example of end cleaning unit

End cleaning unit EC can also have following structure.Figure 20 is the figure that is used to illustrate the another structure example of end cleaning unit EC.About the end cleaning unit EC of Figure 20, the point different with the end cleaning unit EC of Figure 17 is described.

As shown in figure 20, in this routine end cleaning unit EC, be provided with ultrasonic nozzle 410 at the front end of arm 303 and replace second fluid nozzle 310.

In addition, in this example, ultrasonic nozzle 410 is installed in the leading section of arm 303 in the mode of the surface tilt of the substrate W that relatively kept by rotary chuck 201.

Be connected with cleaning solution supplying pipe 331 at ultrasonic nozzle 410.Thus and the example of Figure 17 same, by opening valve 332, thereby cleaning fluid is fed into ultrasonic nozzle 410 by cleaning solution supplying pipe 331.In addition, in this example, use pure water as cleaning fluid.

In ultrasonic nozzle 410, be built-in with dither 411.This dither 411 and high frequency generating apparatus 420 are electrically connected.

When substrate W was carried out the end clean, pure water sprayed to the end of substrate W R from ultrasonic nozzle 410.Here, at pure water when ultrasonic nozzle 410 is ejected, from high frequency generating apparatus 420 to dither 411 supply high frequency electric currents.

Thereby dither 411 carries out ultrasonic vibration, to applying by the pure water in the ultrasonic nozzle 410 and the corresponding high frequency output of the value of high-frequency current.Consequently, the pure water that is in the ultrasonic vibration state is ejected into the end R of substrate W, thus the end R of cleaning base plate W.

In addition, in this example, also in the cleaning unit EC of end, be provided with and have the structure identical and the ultrasonic nozzle 410a of function with above-mentioned ultrasonic nozzle 410.This ultrasonic nozzle 410a with relative with the back side of the substrate W that keeps by rotary chuck 201 to and the mode that tilts of the back side of substrate W and being mounted relatively.In addition, be built-in with the sub-411a of dither in the inside of ultrasonic nozzle 410a, ultrasonic nozzle 410a is installed in not shown arm.

Like this, by with relative with the surface of substrate W and the back side to mode ultrasonic nozzle 410,410a are set, thereby the end R of cleaning base plate W reliably.In addition, each feed system of the cleaning fluid of ultrasonic nozzle 410a and high-frequency current is because identical with ultrasonic nozzle 410, the Therefore, omited explanation.

In addition, in the cleaning unit EC of the end of Figure 20, similarly be provided with leading arm 251,252, supporting member 253,254 and arm travel mechanism 255,256 with the end cleaning unit EC of Fig. 4.They have structure and the function identical with the end cleaning unit EC of Fig. 4.Thereby by mounting to rotary chuck 201 time, the position of substrate W is corrected by leading arm 251,252 at substrate W.

In addition, also can replace leading arm 251,252, supporting member 253,254 and arm travel mechanism 255,256 and be provided with correction pin 261, pin drive unit 262 and the eccentricity sensor 263 of Fig. 8, also can be provided with 4 supporting pin 271P, pin retaining member 271 and the pin drive unit 273 of Figure 10.Can also be provided with the video camera 290 of Figure 13, also can be provided with video camera 290 and the rotating mechanism mobile device 291 of Figure 14.

And then, also can replace leading arm 251,252, supporting member 253,254 and arm travel mechanism 255,256, the light-projecting portion 276a in that the end of Figure 17 cleaning unit EC is provided with Figure 15 is provided with light accepting part 276b at hand CRH11.

(4) about the washing/drying processing unit

Then, at washing/drying processing unit SD, use accompanying drawing to describe.

(4-a) structure of washing/drying processing unit

Structure to washing/drying processing unit SD describes.Figure 21 is the figure that is used to illustrate the structure of washing/drying processing unit SD.

As shown in figure 21, washing/drying processing unit SD has rotary chuck 621, and when this rotary chuck 621 was used for flatly keeping substrate W, making substrate W was that the center is rotated with the rotating shaft of the vertical at the center by substrate W.

Rotary chuck 621 is fixed on the upper end of the rotating shaft 625 that rotates by chuck rotary drive mechanism 636.In addition, on rotary chuck 621, be formed with air-breathing path (not shown), and by under the state that substrate W is positioned on the rotary chuck 621, carrying out exhaust in to air-breathing path, and with the lower surface vacuum suction of substrate W on rotary chuck 621, thereby substrate W can be kept with flat-hand position.

Arranged outside at rotary chuck 621 has first motor 660.Be connected with first rotation axis 661 at first motor 660.In addition, first arm 662 is connected on first rotation axis 661 in the mode of extending in the horizontal direction, is provided with clean with nozzle 650 at the front end of first arm 662.

When making 661 rotations of first rotation axis by first motor 660, first arm 662 also rotates, and makes clean move to the top of the substrate W that is kept by rotary chuck 621 with nozzle 650.

Be provided with clean with supply pipe 663 in the mode of the inside by first motor 660, first rotation axis 661 and first arm 662.Clean with supply pipe 663 via valve Va and valve Vb and be connected on cleaning solution supplying source R1 and the flushing liquor supply source R2.By controlling the Push And Release of this valve Va, Vb, can supply to clean with the selection of the treatment fluid of supply pipe 663 and the adjustment of quantity delivered.In the structure of Figure 21,, can by opening valve Vb, flushing liquor can be supplied to clean supply pipe 663 with cleaning solution supplying to clean supply pipe 663 by opening valve Va.

Cleaning fluid or flushing liquor are fed into clean nozzle 650 with supply pipe 663 from cleaning solution supplying source R1 or flushing liquor supply source R2 by clean.Thus, can supply with cleaning fluid or flushing liquor to the surface of substrate W.As cleaning fluid, can use for example pure water, the liquid that in pure water, has dissolved complex compound (material after the ionization) or fluorine class soup etc.As flushing liquor, can use any among for example pure water, carbonated water, hydrogeneous water and electrolytic ionic water, the HFE (hydrogen fluorine ether).

Arranged outside at rotary chuck 621 has second motor 671.Second motor 671 is connected with second rotation axis 672.In addition, second arm 673 is connected in second rotation axis 672 in the mode of extending in the horizontal direction, is provided with dried with nozzle 670 at the front end of second arm 673.

When making 672 rotations of second rotation axis, second arm 673 is rotated, and dried is moved to the top of the substrate W that is kept by rotary chuck 621 with nozzle 670 by second motor 671.

Be provided with dried with supply pipe 674 in the mode of the inside by second motor 671, second rotation axis 672 and second arm 673.Dried is connected to inert gas supply source R3 with supply pipe 674 via valve Vc.By controlling the Push And Release of this valve Vc, supply to the quantity delivered of dried with the inert gas of supply pipe 674 thereby can adjust.

Inert gas is fed into dried nozzle 670 with supply pipe 674 from inert gas supply source R3 by dried.Thus, can supply with inert gas to the surface of substrate W.As inert gas, can use for example nitrogen gas (N ₂).

When cleaning fluid or flushing liquor are supplied with in the surface of substrate W, clean is positioned at the top of substrate with nozzle 650, and when inert gas is supplied with on the surface of substrate W, clean is kept out of the way the position of stipulating with nozzle 650.

In addition, when cleaning fluid or flushing liquor are supplied with in the surface of substrate W, dried is kept out of the way the position of stipulating with nozzle 670, and when inert gas is supplied with on the surface of substrate W, dried is positioned at the top of substrate W with nozzle 670.

In the substrate W that rotary chuck 621 is kept is housed inside processing cup 623.In the inboard of handling cup 623, be provided with the spaced walls 633 of tubular.In addition, be formed with the discharge opeing space 631 that is used for discharging at the used treatment fluid of the processing of substrate W (cleaning fluid or flushing liquor) in the mode on every side of surrounding rotary chuck 621.Further, handling the recovery liquid space 632 that is formed with the used treatment fluid of processing that is used for being recovered in substrate W between cup 623 and the spaced walls 633 in the mode of surrounding discharge opeing space 631.

Be connected with the discharging tube 634 that is used for to discharge opeing processing unit (not shown) boot process liquid in discharge opeing space 631, and be connected with the recovery tube 635 that is used for to recycling and processing device (not shown) boot process liquid at recovery liquid space 632.

Handle cup 623 above be provided with the protector 624 that is used to prevent that the treatment fluid from substrate W from dispersing laterally.This protector 624 forms relative rotation axi 625 rotational symmetric shapes.Inner surface in protector 624 upper ends is formed with the discharge opeing guiding groove 641 of cross section for " く " word shape in the form of a ring.

In addition, the inner surface in the bottom of protector 624 is formed with the recovery liquid guide portion 642 that the inclined plane that tilted by below laterally constitutes.Near the upper end of reclaiming liquid guide portion 642, be formed with the spaced walls holding tank 643 that is used to hold the spaced walls 633 of handling cup 623.

Be provided with the protector lift drive mechanism (not shown) that constitutes by ball screw framework etc. at this protector 624.The protector lift drive mechanism make protector 624 the peripheral end that reclaims liquid guide portion 642 and the substrate W that is kept by rotary chuck 621 relative to the recovery position and the peripheral end of discharge opeing guiding groove 641 and the substrate W that kept by rotary chuck 621 relatively to the discharge opeing position between move up and down.When protector 624 was positioned at recovery position (position of protector as shown in figure 21), the treatment fluid that disperses laterally from substrate W was directed to the recovery liquid space 632 by reclaiming liquid guide portion 642, and is recovered by recovery tube 635.On the other hand, when protector 624 was positioned at the discharge opeing position, the treatment fluid that disperses laterally from substrate W was directed to the discharge opeing space 631 by discharge opeing guiding groove 641, and is discharged from by discharging tube 634.By above structure, carry out the discharge and the recovery of treatment fluid.

(4-b) action of washing/drying processing unit

Below, the processing action of washing/drying processing unit SD with said structure is described.In addition, the below action of each inscape of Shuo Ming washing/drying processing unit SD is controlled by the master controller (control part) 91 of Fig. 1.

At first, when moving into substrate W, when protector 624 descends, the interface of Fig. 1 with transport mechanism IFR with substrate W mounting to rotary chuck 621.The substrate W of mounting to the rotary chuck 621 is adsorbed maintenance by rotary chuck 621.

Then, when protector 624 moved to above-mentioned discharge opeing position, clean moved to the central part top of substrate W with nozzle 650.Then, rotating shaft 625 is rotated, and along with this rotation, the substrate W that is maintained on the rotary chuck 621 also rotates.Then, cleaning fluid is sprayed onto the upper surface of substrate W with nozzle 650 from clean.Thus, carry out cleaning to substrate W.

In addition, in washing/drying handling part 80a, when carrying out this cleaning, the composition stripping of the epiphragma against corrosion on the substrate W is in cleaning fluid.In addition, in cleaning, go up the supply cleaning fluid to substrate W when making substrate W rotation to substrate W.

At this moment, owing to there is centrifugal force, so the cleaning fluid on the substrate W always moves and disperses to the circumference of substrate W.Thereby, can prevent that the composition of the against corrosion epiphragma of stripping in the cleaning fluid from remaining on the substrate W.In addition, for example, also can be by on substrate W, filling with pure water and keeping certain hour to make the composition stripping of above-mentioned epiphragma against corrosion.Also have, the supply of the cleaning fluid on substrate W also can be undertaken by flexibility ejection (ソ Off ト ス プ レ one) mode of having used second fluid nozzle.

Through after the stipulated time, stop to supply with cleaning fluid, and spray flushing liquors with nozzle 650 from clean.Thus, rinse out cleaning fluid on the substrate W.

After passing through the stipulated time again, the rotary speed of rotating shaft 625 reduces.Thus, the amount of the flushing liquor that is got rid of by the rotation of substrate W reduces, and shown in Figure 22 (a), is formed with the liquid layer L of flushing liquor on the whole surface of substrate W.In addition, the rotation of rotating shaft 625 is stopped and on the whole surface of substrate W, forming liquid layer L.

Then, stop to supply with flushing liquor, when clean was kept out of the way the position of regulation with nozzle 650, dried moved to the central part top of substrate W with nozzle 670.Then, spray inert gases from dried with nozzle 670.Thus, shown in Figure 22 (b), the flushing liquor of the central part of substrate W moves to the circumference of substrate W, thereby becomes the state that only has liquid layer L at the circumference of substrate W.

Then, when the rotating speed of rotating shaft 625 (with reference to Figure 21) rose, like that, dried slowly moved with nozzle 670 direction circumference top from the central part of substrate W shown in Figure 22 (c).Thus, in the time of to the liquid layer L effect on the substrate W very big centrifugal force, can therefore can remove the liquid layer L on the substrate W reliably to the whole jet surface inert gas of substrate W.Its result can make substrate W drying reliably.

Then, stop to supply with inert gas, and make dried nozzle 670 keep out of the way the position of regulation, rotating shaft 625 stopped the rotation.Then, protector 624 is descended, the interface of Fig. 1 is taken out of substrate W with transport mechanism IFR from washing/drying processing unit SD simultaneously.Thus, the processing that finishes in washing/drying processing unit SD is moved.In addition, clean and dried in the position of protector 624, preferably suitably change according to the needs of the recovery of treatment fluid or discharge.

In addition, in the above-described embodiment, adopted such structure: shared cleaning fluid is handled with nozzle 650 in the supply of the supply of cleaning fluid and flushing liquor, so that any all can be handled with nozzle 650 supplies from cleaning fluid in cleaning fluid and the flushing liquor, separate nozzle and the flushing liquor supply structure of nozzle that cleaning solution supplying is used respectively but also can adopt.

In addition, when supplying with flushing liquor, also can never illustrated anti-flushing supply with pure water to the back side of substrate W, so that flushing liquor does not spread to the back side of substrate W with nozzle.

In addition, as the cleaning fluid of cleaning base plate W and use under the situation of pure water, do not need to carry out the supply of flushing liquor.

In addition, in the above-described embodiment, come substrate W is implemented dried, still, also can come substrate W is implemented dried by other drying means such as drying under reduced pressure method, air knife drying means by the Rotary drying method.

In addition, in the above-described embodiment, under the state of the liquid layer L that is formed with flushing liquor, supply with inert gas from dried with nozzle 670, but in the situation of the liquid layer L that does not form flushing liquor or do not use under the situation of flushing liquor, make substrate W rotation and in case after the liquid layer of cleaning fluid got rid of, immediately from dried with nozzle 670 supply inert gases and substrate W bone dry also can.

(5) about the interface transport mechanism of interface area

Describe with transport mechanism IFR at interface.Figure 23 is used for the specification interface formation of transport mechanism IFR and the figure of action.

At first, docking port describes with the formation of transport mechanism IFR.As shown in figure 23, interface screws togather with helical axis 182 with the movable table 181 of transport mechanism IFR.Helical axis 182 is rotatably supported by brace table 183 in the mode of extending at directions X.End at helical axis 182 is provided with motor M2, by this motor M2 rotating screw axle 182, moves horizontally movable table 181 on ± directions X.

In addition, in movable table 181, rotatable and hand support platform 184 is arranged in ± liftable the mounting of Z direction in ± θ direction.Hand support platform 184 is connected via the motor M3 in rotating shaft 185 and the movable table 181, rotates hand support platform 184 by this motor M3.At hand support platform 184, can advance and retreat is arranged with two hand H1, H2 that keep substrate W with flat-hand position on the ground.

Then, docking port describes with the action of transport mechanism IFR.Interface is controlled by the master controller (control part) 91 of Fig. 1 with the action of transport mechanism IFR.

At first, interface transport mechanism IFR, when the position of Figure 23 A made 184 rotations of hand support platform, edge+Z direction rose, and makes the hand H1 of upside enter the PASS15 of substrate-placing portion.In the PASS15 of substrate-placing portion, when hand H1 accepted substrate W, interface made hand H1 retreat from the PASS15 of substrate-placing portion with transport mechanism IFR, and hand support platform 184 edge-Z directions are descended.

Then, interface moves with transport mechanism IFR edge-directions X, and at position B, when making 184 rotations of hand support platform, the substrate that makes hand H1 enter exposure device 17 is moved into the 17a of portion (with reference to Fig. 1).After substrate W moved into substrate and move into the 17a of portion, interface made hand H1 move into the 17a of portion from substrate with transport mechanism IFR and retreats.

Then, the interface substrate that makes the hand H2 of downside enter exposure device 17 with transport mechanism IFR is moved into the 17b of portion (with reference to Fig. 1).Move among the 17b of portion at substrate, during substrate W after hand H2 accepts exposure-processed, interface makes hand H2 take out of the 17b of portion from substrate with transport mechanism IFR and retreats.

Then, interface moves with transport mechanism IFR edge+directions X, when position A makes 184 rotations of hand support platform, makes hand H2 enter into washing/drying processing unit SD, and substrate W is moved into washing/drying processing unit SD.Thus, come the substrate W after the exposure-processed is cleaned and dried by washing/drying processing unit SD.

Then, interface makes the hand H1 of upside enter into washing/drying processing unit SD with transport mechanism IFR, from washing/drying processing unit SD accept to clean and dried after substrate W.Interface with transport mechanism IFR with this substrate W mounting to the PASS16 of substrate-placing portion.

In addition, as mentioned above, can not accept at exposure device 17 under the situation of substrate W, substrate W temporarily is received keeping in carrying buffering reservoir SBF.In addition, in washing/drying processing unit SD, temporarily can not clean and the situation of dried under, the substrate W after the exposure-processed is temporarily held the return buffer store portion RBF of keeping at interface area 16.

In the present embodiment, carry out from the PASS15 of substrate-placing portion to the conveyance of exposure device 17, from the conveyance of exposure device 17 with transport mechanism IFR by 1 interface, but also can use a plurality of interfaces to carry out the conveyance of substrate W with transport mechanism IFR to washing/drying processing unit SD.

(6) effect in the present embodiment

(6-a) effect of end clean

In the above-described embodiment, the end cleaning unit EC of washing/drying handling part 80 before substrate W is carried out the end clean, revises the position of substrate W, makes that the center W1 of substrate W is consistent with the axle center P1 of rotary chuck 201.Thereby, when substrate W is carried out the end clean, can prevent the off-centre of substrate W relative rotation axi 203, equably the end R of cleaning base plate W.Therefore, can prevent from produce to clean irregular, can positively go out attached to the polluter on the R of end at the end of substrate W R.

In addition, by preventing the off-centre of substrate W, and can adjust accurately by the cleaning zone of end clean to end R.Thus, can have select and correctly clean only contain the inclined plane part (with reference to Fig. 5) of end R or contain the inclined plane part of end R and the end R of the substrate W such as zone of circumference in various zones.Therefore, can prevent to carry out unnecessary clean to being formed at the part that organic membrane on the substrate W etc. should not carry out clean.

In addition, owing to the spin stabilization of substrate W when substrate W is carried out end portion treatment, therefore can prevent that cleaning fluid from disperseing towards periphery.Thus, can prevent that the cleaning fluid that disperses is once more attached on the surface of substrate W and pollute substrate W.

These results are, can prevent the pollution in the exposure device 17 that the pollution because of the end R of substrate W causes, can prevent the generation of the bad and shape defect of the size of exposing patterns.

In addition, when being in that the antireflection film that forms the circumference on the substrate W and in the etchant resist one or two are not covered by epiphragma against corrosion and during the state that exposes, undertaken in the exposure-processed process by immersion method, the composition of one or two in antireflection film and the etchant resist might stripping or is separated out.Therefore, the zone of containing the circumference of this exposed portions serve by cleaning, in the composition that carries out one or two strippings from antireflection film and etchant resist in the exposure-processed process by immersion method or separate out stripping or separate out in the cleaning unit EC of end in advance, rinse out leachable or precipitate.Therefore, can prevent one or two strippings in when exposure-processed antireflection film and the etchant resist or precipitate in the immersion liquid liquid.Thus, can prevent that exposure device 17 (lens of exposure device 17) is contaminated.Its result can prevent the generation of the bad and shape defect of the size of exposing patterns.

In addition, might stripping when exposure-processed or precipitate into composition in the immersion liquid liquid and be not limited to the composition that comprised in above-mentioned antireflection film and the etchant resist, also there are substrate board treatment 500 outer external device (ED)s to be formed at the composition that semiconductor film, metal film, dielectric film or organic membrane etc. on the substrate W are comprised by being set at present embodiment.Also can make the stripping or separate out in the cleaning unit EC of end in advance of composition that these films comprise.

In addition, like this,, preferably adopt at exposure device 17 employed immersion liquid liquid as cleaning fluid for the stripping in advance or separate out in the cleaning unit EC of the end of substrate W of the composition that makes the film on the substrate W.As the example of immersion liquid liquid, the mixed liquor that can list pure water, have the glycerol of high index of refraction, the particulate (for example aluminium oxide) of high index of refraction and pure water is mixed and the liquid of organic class etc.

In addition, as other examples of immersion liquid liquid, can list any in the mixed liquor of the liquid, carbonated water, hydrogeneous water, electrolytic ionic water, HFE (hydrogen fluorine ether), fluoric acid, sulfuric acid and sulfuric acid and the hydrogen peroxide that in pure water, have dissolved complex compound (material after the ionization).

(6-b) used the effect of the end clean of cleaning brush

When in the cleaning unit EC of end, carrying out the end clean, because cleaning brush 213 directly contacts with the end R of substrate W, so the polluter of the end R of substrate W is peeled off by 213 couples of substrate W of cleaning brush.Thus, can more positively remove securely attached to the polluter on the R of end.

(6-c) used the effect of the end clean of second fluid nozzle

When using 310 couples of substrate W of second fluid nozzle to carry out the end clean in the cleaning unit EC of end, the fluid-mixing N of gas and liquid is ejected into the end R of substrate W, and the end R of cleaning base plate W.Like this, wash effect by adopting fluid-mixing N can access high definition.

In addition, be ejected into the end R of substrate W by fluid-mixing N with gas and liquid, thereby with the end R of noncontact mode cleaning base plate W, the damage of the end R of the substrate W in the time of therefore can preventing to clean.And then, by ejection pressure and the gas among the fluid-mixing N and the ratio of liquid of control fluid-mixing N, the also cleaning condition of the end R of control basal plate W easily.

In addition, utilize second fluid nozzle 310, uniform fluid-mixing N can be ejected into the end R of substrate W, therefore can not clean irregular.

(6-d) used the effect of the end clean of ultrasonic nozzle

When in the cleaning unit EC of end, using 410 couples of substrate W of ultrasonic nozzle to carry out the end clean, to applying by the pure water in the ultrasonic nozzle 410 and the corresponding high frequency output of the value of high-frequency current volume.

Thus, the pure water that is in the ultrasonic vibration state is ejected into the end R of substrate W, thus the end R of cleaning base plate W.At this moment, can control the high frequency output that is applied in to pure water changeably according to kind and the cleaning condition incoming call of substrate W.

(6-e) effect of the clean of the substrate after the exposure-processed

After 17 couples of substrate W of exposure device carry out exposure-processed, carry out clean at 80 couples of substrate W of washing/drying handling part of washing/drying treatment region 15.At this moment, adhered to the dust in the environmental gas etc., also can remove this attachment even when exposure-processed, adhered on the substrate W of liquid.Thus, can prevent the pollution of substrate W.

In addition, in washing/drying handling part 80, carry out the dried of the substrate W after the exposure-processed.Thus, prevent from when exposure-processed, to fall in the substrate board treatment 500 attached to the liquid on the substrate W.Consequently, the unusual of electrical system that can prevent substrate board treatment 500 waits action bad.

In addition, by carrying out the dried of the substrate W after the exposure-processed, can prevent dust etc. in the environmental gas, thereby can prevent the pollution of substrate W attached on the substrate W after the exposure-processed.

In addition and since the substrate W that can prevent to be attached with liquid substrate board treatment 500 in by conveyance, thereby attached to the liquid on the substrate W substrate board treatment 500 interior environmental gas are exerted an influence can prevent exposure-processed the time.Thus, can easily adjust temperature and humidity in the substrate board treatment 500.

In addition, since can prevent exposure-processed the time attached to the liquid on the substrate W attached on protractor IR and second～the 8th central robot CR2～CR8, so can prevent on the substrate W before liquid is attached to exposure-processed.Thus, owing to can prevent dust etc. in the environmental gas attached on the substrate W before the exposure-processed, thus can prevent that substrate W is contaminated.Consequently, when the resolution in the time can preventing exposure-processed can worsen, can positively prevent the pollution in the exposure device 17.The result can prevent positively that the processing of substrate W is bad.

In addition, the structure that is used to carry out the dried of the substrate W after the exposure-processed is not limited to the example of the substrate board treatment 500 of Fig. 1.Be substituted in epiphragma against corrosion and remove between district 14 and the interface area 16 washing/drying treatment region 15 is set, and washing/drying handling part 80 is set in interface area 16, carry out the dried of the substrate W after the exposure-processed.

(6-f) effect of the dried of the substrate after the exposure-processed

In washing/drying processing unit SD, when making substrate W rotation, spray inert gas to circumference from the central part of substrate W, carry out the dried of substrate W.At this moment, owing to can positively remove cleaning fluid and flushing liquor on the substrate W, thereby can prevent positively that dust etc. in the environmental gas is attached on the substrate W after cleaning.Thus, the pollution of substrate W can be positively prevented, dry water spots can be prevented from the surface of substrate W, to produce simultaneously.

(6-g) effect of washing/drying treatment region

The substrate board treatment 500 of present embodiment is owing to having the structure of having appended washing/drying treatment region 15 on existing substrate board treatment, so can prevent that the processing of substrate W is bad with low cost.

(6-h) about the effect of interface with the hand of transport mechanism

In interface area 16, when from the substrate W of the PASS15 of substrate-placing portion before the substrate of exposure device 17 is moved into the 17a of portion conveyance exposure-processed, and during from the substrate W of washing/drying processing unit SD after the PASS16 of substrate-placing portion conveyance cleaning and dried, use the hand H1 of interface with transport mechanism IFR, and when taking out of the substrate W of the 17b of portion after washing/drying processing unit SD conveyance exposure-processed from the substrate of exposure device 17, use the hand H2 of interface with transport mechanism IFR.

That is, in the conveyance of the substrate W that is not attached with liquid, use hand H1, and in the conveyance of the substrate W that is attached with liquid, use hand H2.

At this moment, owing to can prevent when exposure-processed attached to the liquid on the substrate W, so can prevent on the substrate W before liquid is attached to exposure-processed attached on the hand H1.In addition, because hand H2 is arranged on the below of hand H1, so, can prevent that also liquid is attached on hand H1 and the substrate W by its maintenance even liquid falls from hand H2 and by the substrate W of its maintenance.Thus, can prevent reliably on the substrate W before liquid is attached to exposure-processed.Consequently, can prevent the pollution of the substrate W that exposure-processed is preceding reliably.

(6-i) effect of removing processing of epiphragma against corrosion

In development treatment district 12, substrate W is carried out before the development treatment, remove the processing of removing of carrying out epiphragma against corrosion in the district 14 at epiphragma against corrosion.At this moment, owing to can before development treatment, remove epiphragma against corrosion reliably, thus can carry out development treatment reliably.

(6-j) effect of washing/drying processing unit

As mentioned above, in washing/drying processing unit SD, when making substrate W rotation, spray inert gas to circumference, carry out the dried of substrate W, therefore, can positively remove cleaning fluid and flushing liquor from the central part of substrate W.

Thus, can positively prevent from washing/drying handling part 80 during the 50 conveyance substrate W of development treatment portion, composition against corrosion or epiphragma composition against corrosion stripping are in cleaning fluid or flushing liquor residual on substrate W.Thus, can positively prevent the distortion of the exposing patterns that forms on the etchant resist.The reduction of the live width precision in the time of consequently, can positively preventing development treatment.

(6-k) about the effect of the hand of manipulator

Second～the 6th central robot CR2～CR6 and protractor manipulator IR in the conveyance of the substrate W before exposure-processed, use the hand of upside, in the conveyance of the substrate W after the exposure-processed, use the hand of downside.Thus, can positively prevent on the substrate W before liquid is attached to exposure-processed.

(7) other execution mode and effect thereof

(7-a) about other examples of the washer jet that is used for the end clean

In the above-described embodiment, when carrying out the end clean of substrate W, used cleaning solution supplying path 241a, 241b, second fluid nozzle 310,310b and ultrasonic nozzle 410,410a, but be not limited in this.Also can use the washer jet of ejection portion with the little needle-like of diameter.At this moment, the little end R in the zone of cleaning base plate W accurately.

(7-b) about other configuration example

In the above-described embodiment, epiphragma against corrosion is removed district 14 and is comprised two epiphragmas against corrosion and remove with handling part 70a, 70b, but, remove district 14 at epiphragma against corrosion, also can replace two epiphragmas against corrosion and remove and comprise the heat treatment portion that substrate W is heat-treated with one among handling part 70a, the 70b.At this moment, owing to can heat-treat a plurality of substrate W efficiently, therefore can improve production capacity.

(7-c) other examples of washing/drying processing unit

In washing/drying processing unit SD shown in Figure 21, be provided with clean respectively separately with nozzle 650 and dried nozzle 670, still, as shown in figure 24, clean nozzle 650 and dried nozzle 670 can be set integratedly also.At this moment, since need be the time to the clean of substrate W or during dried independent respectively mobile clean with nozzle 650 and dried with nozzle 670, so driving mechanism is oversimplified.

In addition, also can replace dried shown in Figure 21 nozzle 670, and use dried nozzle 770 as shown in figure 25.

The dried of Figure 25 has the branched pipe 771,772 that extends to oblique below from the side when extend the vertical below with nozzle 770.Be formed with gas vent 770a, 770b, the 770c that sprays inert gas in dried with the lower end of nozzle 770 and the lower end of branched pipe 771,772.Shown in the arrow of Figure 25, like that, spray inert gas to the vertical below and tiltedly respectively from each ejiction opening 770a, 770b, 770c.That is, with in the nozzle 770, the mode that enlarges with spray regime downwards sprays inert gas in dried.

Here, when using dried with nozzle 770, washing/drying processing unit SD comes substrate W is carried out dried by following illustrated action.

Figure 26 is the figure that is used to illustrate the drying method of the substrate W when having used dried with nozzle 770.

At first, by in method illustrated in fig. 22, after the surface of substrate W formed liquid layer L, shown in Figure 26 (a), dried moved to the central part top of substrate W with nozzle 770.Then, spray inert gases from dried with nozzle 770.Thus, shown in Figure 26 (b), the flushing liquor of the central part of substrate W moves to the circumference of substrate W, and becomes the state that only has liquid layer L at the circumference of substrate W.In addition, at this moment, make dried use nozzle 770, positively move so that be present in the flushing liquor of the central part of substrate W in advance near the surface of substrate W.

Then, when the rotating speed of rotating shaft 625 (with reference to Figure 21) rose, shown in Figure 26 (c), dried was moved upward with nozzle 770.Thus, in the time of to the very big centrifugal force of the liquid layer L effect on the substrate W, the injected expanded range that inert gas is arranged on substrate W.Its result can remove the liquid layer L on substrate W reliably.In addition, make 672 oscilaltions of second rotation axis by the rotation axis elevating mechanism (not shown) on second rotation axis 672 that is set at Figure 21, thereby dried is moved up and down with nozzle 770.

In addition, also can replace dried nozzle 770, and use dried nozzle 870 as shown in figure 27.Dried among Figure 27 has the ejiction opening 870a that diameter downwards enlarges gradually with nozzle 870.Shown in the arrow of Figure 27, spray inert gas to vertical lower and tiltedly from this ejiction opening 870a.Just, though dried with nozzle 870, also the dried with Figure 25 is identical with nozzle 770, sprays inert gas in the mode of the expanded range of spraying downwards.Thereby, using dried with under the situation of nozzle 870, also can be by coming substrate W is carried out dried with the identical method of the situation of nozzle 770 with using dried.

In addition, also can replace washing/drying processing unit SD shown in Figure 21, and use washing/drying processing unit SDa as shown in figure 28.

The difference of washing/drying processing unit SDa shown in Figure 28 and washing/drying processing unit SD shown in Figure 21 is following some.

In the washing/drying processing unit SDa of Figure 28, above rotary chuck 621, be provided with the discoideus baffle board 682 that has opening at central part.From being provided with bolster 689 to vertical below near the front end of arm 688, and baffle board 682 is installed in the lower end of this bolster 689 so that its with by upper surface of the substrate W of rotary chuck 621 maintenances relative to.

The slotting gas feed path 690 that is connected with the opening of baffle board 682 that is connected with in the inside of bolster 689.Supply with for example nitrogen gas at gas feed path 690.

Be connected with baffle board lift drive mechanism 697 and baffle board rotary drive mechanism 698 at arm 688.Baffle board lift drive mechanism 697 makes baffle board 682 near the position of the upper surface of the substrate W that is kept by rotary chuck 621 with move up and down between the position away from rotary chuck 621 upward.

In the washing/drying processing unit SDa of Figure 28, when substrate W is carried out dried, as shown in figure 29,,, supply with inert gas from gas feed path 690 to the gap between substrate W and the baffle board 682 in that baffle board 682 is close under the state of substrate W.At this moment, owing to can supply with inert gas efficiently to circumference, therefore can remove the liquid layer L on the substrate W reliably from the central part of substrate W.

(7-d) other configuration examples of end cleaning unit EC

In the above-described embodiment, end cleaning unit EC is configured in the washing/drying treatment region 15, and still, end cleaning unit EC also can be configured in interface area 16 as shown in Figure 1.

Figure 30 is the end view of the substrate board treatment 500 when end cleaning unit EC is arranged on the interface area 16 of Fig. 1.

As shown in figure 30, in this example, washing/drying handling part 80 (with reference to Fig. 1) stacked on top of one another of washing/drying treatment region 15 dispose 3 washing/drying processing unit SD.

Stack gradually at interface area 16 and to dispose 1 EEW of edge exposure portion, 1 end cleaning unit EC, the PASS15 of substrate-placing portion, PASS16 and to return buffering reservoir RBF, simultaneously, dispose the 8th central robot CR8 (with reference to Fig. 1) and interface transport mechanism IFR.

At this moment, also same with above-mentioned true mode, can before carrying out exposure-processed, positively remove attached to the polluter on the end R of substrate W by exposure device 17.Thus, the pollution in the exposure device 17 that the pollution because of the end R of substrate W causes can be prevented, the generation of the bad and shape defect of the size of exposing patterns can be prevented.

Special owing to before carrying out exposure-processed, can positively remove attached to the polluter on the end R of substrate W by exposure device 17, thereby before exposure-processed, the end R of substrate W can be remained on very clean state.

Except that above-mentioned, end cleaning unit EC also can be configured in antireflection film shown in Figure 1 with in the treatment region 10, perhaps also the clean district, end that comprises end cleaning unit EC can be arranged on protractor district 9 shown in Figure 1 and antireflection film with between the treatment region 10.

At this moment, by coating element BARC before coating on the substrate W forms antireflection film, promptly substrate W is carried out before other handle, carry out the end clean of substrate W by end cleaning unit EC.Thus, the polluter that can prevent the end R of substrate W is transferred to first～the 8th central robot CR1～CR8 of being used for conveyance substrate W between each district and interface hand CRH1～14, H1, the H2 with transport mechanism IFR.

Thus, can remove with treatment region 13, epiphragma against corrosion with treatment region 11, development treatment district 12, epiphragma against corrosion with treatment region 10, etchant resist in district 14, the washing/drying treatment region 15, under the state of cleaning, substrate W be handled at antireflection film.

In addition, owing to cleanly keep the end R of substrate W, can prevent fully that the processing of the substrate W that the pollution because of the end R of substrate W causes is bad.

In addition, in the above-described embodiment, end cleaning unit EC in the washing/drying handling part 80 of washing/drying treatment region 15 carries out the end clean of substrate W, but, be not limited in this, (for example, epiphragma against corrosion with the epiphragma against corrosion of treatment region 13 with the coating element COV in the coating handling part 60) carries out also can in the place outside the washing/drying handling part 80.At this moment, the conveyance operation of the end cleaning unit EC after can being cut to epiphragma against corrosion and forming can improve production capacity.

(8) corresponding relation of each inscape in the technical scheme and the each several part in the execution mode

Below, the corresponding example of the each several part in each inscape in the technical scheme and the execution mode is described, still, the present invention is not limited to following example.

In the above-described embodiment, antireflection film with treatment region 10, etchant resist with treatment region 11, development treatment district 12, epiphragma against corrosion removes district 14 with treatment region 13, epiphragma against corrosion and washing/drying treatment region 15 is equivalent to handling part; Interface area 16 is equivalent to the junction.

In addition, rotary chuck 201 is equivalent to base plate keeping device, and chuck rotary drive mechanism 204 is equivalent to rotary drive mechanism.

In addition, the end cleaning unit EC of washing/drying handling part 80 is equivalent to first processing unit, epiphragma against corrosion is equivalent to second processing unit with the coating element RES of coating handling part 40, epiphragma against corrosion is equivalent to the 3rd processing unit with the coating element COV of coating handling part 60, the unit R EM that removes that epiphragma against corrosion is removed with handling part 70a, 70b is equivalent to and manages the unit everywhere, antireflection film is equivalent to the 5th processing unit with the coating element BARC of coating handling part 30, and the development treatment cells D EV of development treatment portion 50 is equivalent to the 6th processing unit.

In addition, substrate rotating mechanism 209, end cleaning device travel mechanism 230, local control 250, leading arm 251,252, supporting member 253,254, arm travel mechanism 255,256, revise pin 261, pin drive unit 262 and rotating mechanism mobile device 291 are equivalent to position correcting apparatus, leading arm 251,252 and supporting pin 271P be equivalent to abutting member, revise pin 261 and be equivalent to supporting member, eccentricity sensor 263 is equivalent to the substrate position detector, local control 250 is equivalent to control device, interface is equivalent to carrying device with transport mechanism IFR, hand H1, H2 is equivalent to first and second maintaining part respectively.

Further, pin drive unit 273 is equivalent to lowering or hoisting gear, video camera 290 is equivalent to the end detector, end cleaning device travel mechanism 230 is equivalent to cleaning device travel mechanism, rotating mechanism mobile device 291 is equivalent to holding device travel mechanism, photoelectric sensor 276 is equivalent to move into position detector, and hand CHR11 is equivalent to move into position detector, and local control 250 is equivalent to position regulator.

In addition, as each inscape of technical scheme, also can use other various key elements of the structure put down in writing in the scheme of possessing skills or function.

Claims (9)

1. a substrate board treatment adjacent to by immersion method the exposure device that substrate carries out exposure-processed being disposed, is characterized in that, has:

Handling part, it is handled substrate;

The junction, it is provided with adjacent to an end of above-mentioned handling part, is used for carrying out between above-mentioned handling part and above-mentioned exposure device the handing-over of substrate,

Above-mentioned junction comprises the end cleaning unit, and this end cleaning unit uses the end of cleaning brush cleaning base plate before carrying out exposure-processed by above-mentioned exposure device.

2. substrate board treatment as claimed in claim 1 is characterized in that,

Above-mentioned junction is included in the carrying device of conveyance substrate between above-mentioned handling part and the above-mentioned exposure device,

Above-mentioned carrying device comprises first and second maintaining part that keeps substrate,

During substrate before the above-mentioned exposure-processed of conveyance, keep substrate by above-mentioned first maintaining part,

During substrate after the above-mentioned exposure-processed of conveyance, keep substrate by above-mentioned second maintaining part.

3. substrate board treatment as claimed in claim 2 is characterized in that above-mentioned second maintaining part is set at the below of above-mentioned first maintaining part.

4. substrate board treatment as claimed in claim 1 is characterized in that,

Above-mentioned handling part also comprises second processing unit, and this second processing unit forms the photosensitive film that is made of photosensitive material on substrate.

5. substrate board treatment as claimed in claim 4 is characterized in that,

Above-mentioned handling part also comprises the 3rd processing unit, and the 3rd processing unit forms the diaphragm of the above-mentioned photosensitive film of protection.

6. substrate board treatment as claimed in claim 5 is characterized in that,

Above-mentioned handling part comprises that also manages the unit everywhere, and this is managed the unit everywhere remove said protection film after above-mentioned exposure-processed.

7. substrate board treatment as claimed in claim 4 is characterized in that,

Above-mentioned handling part also comprises the 5th processing unit, and the 5th processing unit formed antireflection film on substrate before forming above-mentioned photosensitive film by above-mentioned second processing unit.

8. substrate board treatment as claimed in claim 1 is characterized in that,

Above-mentioned handling part also comprises the 6th processing unit, and the 6th processing unit carries out development treatment to substrate.

9. substrate board treatment as claimed in claim 1 is characterized in that,

Above-mentioned end cleaning unit has:

Base plate keeping device, it remains level with substrate,

Rotary drive mechanism, it makes the substrate that is kept by the aforesaid substrate holding device is that the center is rotated with the axle vertical with this substrate,

Cleaning device, it cleans the end of the substrate that is rotated by above-mentioned rotary drive mechanism,

Position correcting apparatus, it revises the cleaning positions that substrate is cleaned by above-mentioned cleaning device;

Above-mentioned cleaning device comprises the cleaning brush that can be set up contiguously with the end of aforesaid substrate.

Images