CN100505360C - Magnetic multilayer film with linear magnetoresistance effect and its application - Google Patents
Magnetic multilayer film with linear magnetoresistance effect and its application Download PDFInfo
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 131
- 230000000694 effects Effects 0.000 title claims abstract description 89
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 230000005303 antiferromagnetism Effects 0.000 claims abstract description 7
- 239000000696 magnetic material Substances 0.000 claims abstract description 7
- 230000005294 ferromagnetic effect Effects 0.000 claims description 30
- 229910045601 alloy Inorganic materials 0.000 claims description 15
- 239000000956 alloy Substances 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 15
- 229910052697 platinum Inorganic materials 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 239000011572 manganese Substances 0.000 claims description 6
- 229910020598 Co Fe Inorganic materials 0.000 claims description 4
- 229910002519 Co-Fe Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 229910018936 CoPd Inorganic materials 0.000 claims description 2
- 229910018979 CoPt Inorganic materials 0.000 claims description 2
- 229910005335 FePt Inorganic materials 0.000 claims description 2
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 2
- 229910016629 MnBi Inorganic materials 0.000 claims description 2
- 229910017028 MnSi Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910003271 Ni-Fe Inorganic materials 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 2
- 229910002367 SrTiO Inorganic materials 0.000 claims description 2
- 229910007709 ZnTe Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L manganese oxide Inorganic materials [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910001172 neodymium magnet Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- -1 rare earth manganese oxide Chemical class 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims 3
- 239000012528 membrane Substances 0.000 claims 3
- 229910003321 CoFe Inorganic materials 0.000 claims 2
- 229910015136 FeMn Inorganic materials 0.000 claims 1
- 229910019041 PtMn Inorganic materials 0.000 claims 1
- 238000005259 measurement Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 28
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 26
- 230000004044 response Effects 0.000 description 25
- 239000010408 film Substances 0.000 description 15
- 229910052786 argon Inorganic materials 0.000 description 13
- 238000000992 sputter etching Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000004043 responsiveness Effects 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000035945 sensitivity Effects 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 5
- 230000005355 Hall effect Effects 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 238000003672 processing method Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910018516 Al—O Inorganic materials 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910002551 Fe-Mn Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
The invention relates to a magnetic multilayer film with linear magnetic resistance effect, wherein it is self-rotation valve magnetic resistance made from the magnetic material whose magnetic torque is vertical to horizontal plane; it comprises one substrate deposited with buffer layer, the first magnetic layer, non-magnetic metal conductive layer or insulated layer, the second magnetic layer, antiferromagnetism nail layer and cover layer; the magnetic torque of first magnetic layer is upright; the magnetic torque of second magnetic layer is horizontal; the magnetic torque of first magnetic layer is vertical to the second magnetic layer. The inventive magnetic multilayer film can be used in magnetic sensor and magnetic head. And the magnetic sensor can realize measurement on vertical magnetic field, without changing sensor position and direction.
Description
Technical field
The present invention relates to a kind of magnetoresistance effect with linear magnetoresistance effect, and uses thereof.
Background technology
Usually, with giant magnetoresistance (GMR) and tunnelling resistance (TMR) is the computer magnetic head of core, with the various magnetic field sensors that comprise geomagnetic sensor, position transducer, velocity transducer, acceleration transducer etc., all utilize various magnetic effects to carry out work, and all require resistance (or voltage) to be linear response, and require response curve energy zero crossing (externally-applied magnetic field is zero) with the variation of externally-applied magnetic field.
Wherein, the magnetic field sensor of using Hall effect (Hall effect) meets above-mentioned requirements, and because it is cheap, the magnetic field sensor of most of muting sensitivity all adopts this technology on market at present.But in Hall effect, resistance (voltage) is too little with the variation of externally-applied magnetic field, and therefore, this class magnetic field sensor sensitivity is low, and to having relatively high expectations that signal amplifies.The magnetic head of having relatively high expectations for sensitivity all no longer adopts this effect as working foundation.
Anisotropic magneto-resistance effect (AMR) is an another kind of preparation method working foundation simple and with low cost.The anisotropic magneto-resistor is present in the various magnetic thin films, and it can reach maximum 3% magneto-resistor variation.Adopting the whole piece magnetic responsiveness curve of the magnetic field sensor of AMR is not linear change, only zero point both sides be linear basically.Therefore can take to get therebetween that one section method is applied, and the problem that exists by the signal processing system correction in later stage.It is little that but the magneto-resistor of AMR changes, and also sensitive inadequately to magnetic responsiveness, applicable magnetic field range is also narrow.
The third common effect is common giant magnetoresistance effect (GMR).Giant magnetoresistance has magneto-resistor to be changed greatly, the magnetic responsiveness sensitivity, and advantage such as the magnetic field scope of application is wide, still, its whole piece magnetic responsiveness curve of the giant magnetoresistance of common spin valve structure is not linearity yet.Need be the same with the anisotropic magneto-resistance effect, one section part that is linear response of getting wherein is applied, and is revised the problem that is occurred by signal processing system, so higher to the back segment signal processing requirement.
Ideal giant magnetoresistance with linear response and tunnelling resistance are that its magnetic responsiveness curve will present linear change so with two mutual vertical arrangement of carbon electrode magnetic moment up and down in the prior art.Method in common is by adding the method for permanent magnet at carbon electrode two ends, revise its magnetic moment arragement direction by force, making it vertical mutually at present.This method has the magnetic responsiveness curve and is linear change, and it is handled simply behind the signal, the sensitive advantage in magnetic field, but the cost of this method is higher, has only the business computer magnetic head to adopt this method at present.
Summary of the invention
It is low to the objective of the invention is to overcome the magnetic field sensor sensitivity of using Hall effect in the prior art, and to having relatively high expectations that signal amplifies; The magneto-resistor of anisotropic magneto-resistance effect changes little, and also sensitive inadequately to magnetic responsiveness, applicable magnetic field range is also narrow; Common giant magnetoresistance effect is higher to the back segment signal processing requirement; And adopt giant magnetoresistance need realize that two carbon electrodes are vertical mutually by permanent magnetism with tunnelling resistance with linear response, the shortcoming that cost is higher, thereby provide a kind of magnetic field is linear response and the magnetoresistance effect highly sensitive, that cost of manufacture is cheap, and uses thereof.
The objective of the invention is to realize by the following technical solutions:
The invention provides a kind of magnetoresistance effect with linear magnetoresistance effect, it is based on the self-rotary valve electromagnetic resistor spare of magnetic moment perpendicular to the magnetic material of horizontal plane, as shown in Figure 1, comprise: a substrate 1 (hereinafter to be referred as SB), deposited resilient coating 2 (hereinafter to be referred as BL) on it successively, first soft ferromagnetic layer 3 (hereinafter to be referred as FM1), nonmagnetic metal conductive layer (hereinafter to be referred as NM) or insulating barrier 4 (hereinafter to be referred as I), soft two magnetospheres 5 (hereinafter to be referred as FM2), antiferromagnetic pinning layer 6 (hereinafter to be referred as AFM) and cover layer 7 (hereinafter to be referred as TL), be SB/BL/FM1/NM/FM2/AFM/TL or SB/BL/FM1/I/FM2/AFM/TL, the magnetic moment direction of described first soft ferromagnetic layer (FM1) is a vertical direction, the magnetic moment direction of second soft ferromagnetic layer (FM2) is a horizontal direction, and promptly the magnetic moment direction of first soft ferromagnetic layer (FM1) is vertical mutually with the magnetic moment direction of second soft ferromagnetic layer (FM2).
Described substrate is SiO, MgO, Al
2O
3, GaAs, SrTiO
3, LaAlO
3, or Si.
Described resilient coating is Ru, Cr, Cu, Pt, Au, Ag, Fe, Ta, Mo, Zr, Nb, or their mixture; The thickness of described resilient coating is 1～50nm.
Described cover layer is Pt, Ru, Ta or their mixture; Described tectal thickness is 3～10nm.
Described first soft ferromagnetic layer is: Pt
xCo
y, Pt
x(Co
zFe
100-z)
y, Pt
xFe
y, [Pt
mCo
n]
h, [Pt
m(Co
zFe
100-z)
n]
h, or [Pt
mFe
n]
hWherein, 1nm＜x＜50nm, 0.2nm＜y＜5nm, 0.1nm＜m＜2nm, 0.1nm＜n＜2nm, 1＜h＜20,50＜z＜95; Or: the CoPt alloy film, CoAu alloy multilayer film, the MnBi alloy film, FePt alloy multilayer film, CoPd alloy multilayer film etc. has the metal simple-substance or the alloy film of vertical anisotropic;
Described nonmagnetic metal conductive layer is Ru, Cu, Ag, Au, Pt, Cr, Al, Zn, Pd, Zr, Ti, Sc or their mixture;
Described nonmagnetic metal conductive layer thickness is 0.5～10nm;
Described insulating barrier is that oxide is formed, and described oxide comprises: Al
2O
3, AlN, MgO, Ta
2O
5, HfO
2The thickness of described insulating barrier is 0.3～5nm;
Described second soft ferromagnetic layer is ferrimagnet, semimetal magnetic material or magnetic semiconductor material;
Described ferrimagnet comprises: 3d transition group magnetic metals such as Fe, Co, Ni, rare earth metals such as Pr, Nd, Sm, Gd, Te, Dy, ferromagnetic alloies such as Co-Fe, Co-Fe-B, Nd-Fe-B, Ni-Fe, Gd-Y;
Described semimetal magnetic material comprises: Fe
3O
4, CrO
2, La
1-xSr
xMnO
3(0.16＜x＜1.0), La
1-xCa
xMnO
3(0.18＜x＜0.5), or Pr
1-xSr
xMnO
3(0.3＜x＜1.0) and Co
2Heussler alloys such as MnSi;
Described magnetic semiconductor material is Fe, Co, Ni or V; Described magnetic semiconductor material or the ZnO, the TiO that mix for Mn
2, HfO
2Or SnO
2Described magnetic semiconductor material or GaAs, the InAs, GaN or the ZnTe that mix for Mn;
The thickness of described second soft ferromagnetic layer is 1～10nm;
Described pinning layer is antiferromagnetism metal and alloy thereof, or the artificial pinning material of antiferromagnetism, preferred Cr, Ir-Mn, Pt-Mn, Fe-Mn, Cr-Pt, CoO, NiO, Co/Ru/Co, Co-Fe/Ru/Co-Fe, Co/Cu/Co, or antiferromagnetism perovskite rare earth manganese oxide etc.;
The thickness of described pinning layer is 5～20nm;
Described cover layer is Pt, Ru, and Ta or their mixture are formed;
Described tectal thickness is 3～10nm.
The present invention (for example: molecular beam epitaxial method, magnetically controlled sputter method, electron beam evaporation utilizes conventional film preparation means, the pulsed laser deposition method, chemical vapour deposition technique, galvanoplastic, or electrochemical deposition method) preparation above-mentioned magnetoresistance effect with linear magnetoresistance effect on substrate.The structure of the core of the magnetoresistance effect of this structure is FM1/NM/FM2 or FM1/I/FM2.As shown in Figure 2, the magnetoresistance effect of this structure, the magnetic moment direction of first soft ferromagnetic layer (FM1) is a vertical direction, the magnetic moment direction of second soft ferromagnetic layer (FM2) is a horizontal direction.The magnetic moment direction of such first soft ferromagnetic layer (FM1) is vertical mutually with the magnetic moment direction of second soft ferromagnetic layer (FM2).If apply external magnetic field in level or vertical direction, first soft ferromagnetic layer (FM1) is owing to the interaction of its top pinning layer (AFM), and its magnetic moment direction remains unchanged; The magnetic moment direction of second soft ferromagnetic layer (FM2) then departs from vertical direction under the driving of outside magnetic field, as shown in Figure 3, has produced an angle with the magnetic moment direction of first soft ferromagnetic layer (FM1).The power of external magnetic field has determined the size of this angle, thereby the difference of angle can reflect that resistance changes with the power in magnetic field from macroscopic view.After removing external magnetic field, then the magnetic moment direction of second soft ferromagnetic layer (FM2) returns to original vertical direction.
By adjusting the thickness and the shape of second soft ferromagnetic layer (FM2), can control response range and the response direction of the magnetic moment variation of second soft ferromagnetic layer (FM2) to externally-applied magnetic field.
The present invention realizes externally-applied magnetic field is the purpose of linear response by a kind of magnetoresistance effect of new construction, its magnetic responsiveness curve as shown in Figure 4, and is the same with the 4th kind of method of the prior art, is linear change, and, and has very high sensitivity by zero point.The present invention adopts the method that adds permanent magnet to make its carbon electrode vertical mutually, but adopts a kind of simpler method, reaches same purpose, thereby has reduced cost significantly.
Magnetoresistance effect with linear magnetoresistance effect provided by the invention can be used for magnetic field sensor and magnetic head.Normally the above-mentioned magnetoresistance effect that magnetic field is linear response need be carried out little processing, obtain magnetoresistance effect 100 nanometers to tens micron size, that have required given shape, method routinely is assembled into magnetic field sensor or magnetic head then.
Described little processing comprises: conventional uv-exposure, electron beam exposure, focused particle beam etching, argon ion etching and chemical reaction lithographic method.
The shape of magnetoresistance effect has determined that magnetoresistance effect responds the magnetic field which direction applies, shape commonly used comprises: lines (long 30nm～500 μ m, wide 20nm～500 μ m), circular (diameter is 20nm～500 μ m), it is oval that (major axis is 30nm～500 μ m, minor axis is 20nm～500 μ m), (external diameter is 30nm～500 μ m to annulus, internal diameter is 20nm～500 μ m), (the major axis external diameter is 30nm～500 μ m to elliptical ring, the minor axis external diameter is 20nm～500 μ m, the major axis internal diameter is 20nm～500 μ m, and the minor axis internal diameter is 20nm～500 μ m).
The magnetoresistance effect of crossing through little processed that magnetic field is linear response provided by the invention can be used for the magnetoresistance effect of the information gathering part of magnetic field sensor or magnetic head.
Existing magnetic sensor generally all can only the detection level direction changes of magnetic field, if want to survey the changes of magnetic field of vertical direction, then need the substrate of transducer is erected.And the magnetic field sensor that has used magnetoresistance effect provided by the invention has overcome the shortcoming that general transducer can only detection level direction changes of magnetic field, under the prerequisite that does not change sensing station and direction, can realize the measurement in vertical direction magnetic field.It can distinguish detection level, the changes of magnetic field of vertical both direction, and need not to change the position of substrate.For the transducer of needs detection bidimensional or three-dimensional, the present invention will reduce cost greatly.In like manner, used the magnetic head of magnetoresistance effect provided by the invention can effectively reduce manufacturing cost.
Description of drawings
Fig. 1 is the schematic diagram with magnetoresistance effect of linear magnetoresistance effect provided by the invention; Wherein, 1 substrate, 2 resilient coatings, 3 first soft ferromagnetic layers, 4 nonmagnetic metal conductive layer or insulating barriers, 5 second soft ferromagnetic layers, 6 pinning layers, 7 cover layers;
Fig. 2 when not adding magnetic field, the schematic diagram of two magnetospheric magnetic moment direction in the magnetoresistance effect with linear magnetoresistance effect provided by the invention;
Fig. 3 when applying external magnetic field, the schematic diagram of two magnetospheric magnetic moment direction in the magnetoresistance effect with linear magnetoresistance effect provided by the invention;
The magnetoresistance effect that Fig. 4 provides for the embodiment of the invention 1 is to the response curve of externally-applied magnetic field.
Embodiment
Below in conjunction with drawings and Examples the present invention is done explanation in further detail
Utilize the method for magnetron sputtering to prepare magnetoresistance effect.Substrate is Si/SiO
2, magnetic multilayer film structure is: Ru (5nm)/Pt (10nm)/[Co (0.4nm)/Pt (0.6nm)]
5/ Co (0.4nm)/Cu (2nm)/Co (3nm)/IrMn (12nm)/Ru (5nm).Magnetoresistance effect growth conditions: be equipped with end vacuum: 5 * 10
-7Handkerchief; Sputter high purity argon air pressure: 0.07 handkerchief; Sputtering power: 120 watts; The specimen holder speed of rotation: 20rmp; Growth temperature: room temperature; Growth rate: 0.3-1.1 dust/seconds.Growth time: film thickness/growth rate.
Utilize the method for ultraviolet photolithographic and argon ion etching to carry out little processing.Ultraviolet photolithographic condition: photoresist: S9918; Exposure dose: 55mJ/cm
2Time for exposure: 17 seconds; Developer solution: MF319; Developing time: 45 seconds; Stoving time: 60 seconds; Baking temperature: 95 degree.Argon ion etching condition: power: 300 watts; Ar Pressure: 30mTorr.
Graphics shape is a cylindroid, long 8 microns of transverse, long 4 microns of minor axis, high 42 nanometers.Adopt the SiO2 insulation between top electrode and the hearth electrode.SiO2 thickness 50 nanometers.
Utilize magnetoresistance effect that above-mentioned preparation technology obtains to the response curve of externally-applied magnetic field as shown in Figure 4, it has an optionally magnetoresistance effect of magnetic field for what pair of magnetic field was linear response.
Utilize the method for magnetron sputtering to prepare magnetoresistance effect.Substrate is Si/SiO
2, magnetic multilayer film structure is: Ru (5nm)/Pt (10nm)/[Co (0.4nm)/Pt (0.6nm)]
5/ Co (0.4nm)/Cu (2nm)/Co (3nm)/IrMn (12nm)/Ru (5nm).Magnetoresistance effect growth conditions: be equipped with end vacuum: 5 * 10
-7Handkerchief; Sputter high purity argon air pressure: 0.07 handkerchief; Sputtering power: 120 watts; The specimen holder speed of rotation: 20rmp; Growth temperature: room temperature; Growth rate: 0.3-1.1 dust/seconds.Growth time: film thickness/growth rate.
Utilize ultraviolet photolithographic and electron beam exposure to carry out little processing in conjunction with the method for argon ion etching.Ultraviolet photolithographic condition: photoresist: S9918; Exposure dose: 55mJ/cm
2Time for exposure: 17 seconds; Developer solution: MF319; Developing time: 45 seconds; Stoving time: 60 seconds; Baking temperature: 95 degree.Electron beam exposure condition: photoresist: PMMA950; Exposure dose: 120mJ/cm
2Developer solution: MIBK/IPA; Fixing solution: IPA developing time: 40 seconds; Fixing time: 40 seconds; Stoving time: 60 seconds; Baking temperature: 180 degree.Argon ion etching condition: power: 300 watts; Ar Pressure: 30mTorr.
Graphics shape is a cylindroid, long 200 nanometers of transverse, long 100 nanometers of minor axis, high 42 nanometers.Adopt the SiO2 insulation between top electrode and the hearth electrode.SiO2 thickness 50 nanometers.
Utilize above-mentioned preparation technology can obtain having an optionally magnetoresistance effect of magnetic field to what magnetic field was linear response.
Utilize method similarly to Example 1 to prepare magnetoresistance effect.The one-tenth of magnetoresistance effect is respectively in table 1.
Table 1, magnetic field is the composition of the magnetoresistance effect of linear response
Employing micro-processing method similarly to Example 1 can obtain magnetic field is the magnetoresistance effect that magnetic field optionally has definite shape that has of linear response.
Utilize method similarly to Example 1 to prepare magnetoresistance effect.The one-tenth of magnetoresistance effect is respectively in table 2.
Table 2, magnetic field is the composition of the magnetoresistance effect of linear response
Utilization micro-processing method similarly to Example 2 can obtain magnetic field is the magnetoresistance effect that magnetic field optionally has definite shape that has of linear response.
Embodiment 11
Utilize the method for magnetron sputtering to prepare magnetoresistance effect.Substrate is Si/SiO
2, magnetic multilayer film structure is: Ru (5nm)/Pt (10nm)/[Co (0.4nm)/Pt (0.6nm)]
5/ Co (0.4nm)/Al-O (1nm)/Co (3nm)/IrMn (12nm)/Ru (5nm).Magnetoresistance effect growth conditions: be equipped with end vacuum: 5 * 10
-7Handkerchief; Sputter high purity argon air pressure: 0.07 handkerchief; Sputtering power: 120 watts; The specimen holder speed of rotation: 20rmp; Growth temperature: room temperature; Growth rate: 0.3-1.1 dust/seconds.Growth time: film thickness/growth rate.
Utilize the method for ultraviolet photolithographic and argon ion etching to carry out little processing.Ultraviolet photolithographic condition: photoresist: S9918; Exposure dose: 55rmJ/cm
2Time for exposure: 17 seconds; Developer solution: MF319; Developing time: 45 seconds; Stoving time: 60 seconds; Baking temperature: 95 degree.Argon ion etching condition: power: 300 watts; Ar Pressure: 30mTorr.
Graphics shape is a cylindroid, long 8 microns of transverse, long 4 microns of minor axis, high 42 nanometers.Adopt SiO between top electrode and the hearth electrode
2Insulation.SiO
2Thickness 50 nanometers.
Utilize above-mentioned preparation technology can obtain having an optionally magnetoresistance effect of magnetic field to what magnetic field was linear response.
Embodiment 12
Utilize the method for magnetron sputtering to prepare magnetoresistance effect.Substrate is Si/SiO
2, magnetic multilayer film structure is: Ru (5nm)/Pt (10nm)/[Co (0.4nm)/Pt (0.6nm)]
5/ Co (0.4nm)/Al-O (1.3nm)/Co (3nm)/IrMn (12nm)/Ru (5nm).Magnetoresistance effect growth conditions: be equipped with end vacuum: 5 * 10
-7Handkerchief; Sputter high purity argon air pressure: 0.07 handkerchief; Sputtering power: 120 watts; The specimen holder speed of rotation: 20rmp; Growth temperature: room temperature; Growth rate: 0.3-1.1 dust/seconds.Growth time: film thickness/growth rate.
Utilize ultraviolet photolithographic and electron beam exposure to carry out little processing in conjunction with the method for argon ion etching.Ultraviolet photolithographic condition: photoresist: S9918; Exposure dose: 55mJ/cm
2Time for exposure: 17 seconds; Developer solution: MF319; Developing time: 45 seconds; Stoving time: 60 seconds; Baking temperature: 95 degree.Electron beam exposure condition: photoresist: PMMA950; Exposure dose: 120mJ/cm
2Developer solution: MIBK/IPA; Fixing solution: IPA developing time: 40 seconds; Fixing time: 40 seconds; Stoving time: 60 seconds; Baking temperature: 180 degree.Argon ion etching condition: power: 300 watts; Ar Pressure: 30mTorr.
Graphics shape is a cylindroid, long 200 nanometers of transverse, long 100 nanometers of minor axis, high 42 nanometers.Adopt SiO between top electrode and the hearth electrode
2Insulation.SiO
2Thickness 50 nanometers.
Utilize above-mentioned preparation technology can obtain having an optionally magnetoresistance effect of magnetic field to what magnetic field was linear response.
Embodiment 13～16
Utilize method similarly to Example 1 to prepare magnetoresistance effect.The one-tenth of magnetoresistance effect is respectively in table 3.
Table 3, magnetic field is the composition of the magnetoresistance effect of linear response
Utilization micro-processing method similarly to Example 1 can obtain magnetic field is the magnetoresistance effect that magnetic field optionally has definite shape that has of linear response.
Embodiment 17～20
Utilize method similarly to Example 1 to prepare magnetoresistance effect.The one-tenth of magnetoresistance effect is respectively in table 4.
Table 4, magnetic field is the composition of the magnetoresistance effect of linear response
Utilization micro-processing method similarly to Example 2 can obtain magnetic field is the magnetoresistance effect that magnetic field optionally has definite shape that has of linear response.
Claims (11)
1, a kind of magnetoresistance effect with linear magnetoresistance effect, it is based on the self-rotary valve electromagnetic resistor spare of magnetic moment perpendicular to the magnetic material of horizontal plane, comprise: a substrate, resilient coating, first soft ferromagnetic layer, nonmagnetic metal conductive layer or insulating barrier, second soft ferromagnetic layer, antiferromagnetic pinning layer and cover layer have been deposited on it successively, it is characterized in that: the magnetic moment direction of described first soft ferromagnetic layer is a vertical direction, and the magnetic moment direction of second soft ferromagnetic layer is a horizontal direction.
2, the magnetoresistance effect with linear magnetoresistance effect as claimed in claim 1 is characterized in that: described substrate is SiO, MgO, Al
2O
3, GaAs, SrTiO
3, LaAlO
3, or Si;
Described resilient coating is Ru, Cr, Cu, Pt, Au, Ag, Fe, Ta, Mo, Zr, Nb or their mixture; The thickness of described resilient coating is 1～50nm;
Described cover layer is Pt, Ru, Ta or their mixture; Described tectal thickness is 3～10nm.
3, the magnetoresistance effect with linear magnetoresistance effect as claimed in claim 1 is characterized in that: described first soft ferromagnetic layer is: Pt
xCo
y, Pt
x(Co
zFe
100-z)
y, Pt
xFe
y, [Pt
mCo
n]
h, [Pt
m(Co
zFe
100-z)
n]
h, or [Pt
mFe
n]
hWherein, 1nm＜x＜50nm, 0.2nm＜y＜5nm, 0.1nm＜m＜2nm, 0.1nm＜n＜2nm, 1＜h＜20,50＜z＜95; Described first soft ferromagnetic layer or: CoPt alloy film, CoAu alloy multilayer film, MnBi alloy film, FePt alloy multilayer film or CoPd alloy multilayer film.
4, the magnetoresistance effect with linear magnetoresistance effect as claimed in claim 1 is characterized in that: described nonmagnetic metal conductive layer is Ru, Cu, Ag, Au, Pt, Cr, Al, Zn, Pd, Zr, Ti, Sc or their mixture; Described nonmagnetic metal conductive layer thickness is 0.5～10nm.
5, the magnetoresistance effect with linear magnetoresistance effect as claimed in claim 1, it is characterized in that: described insulating barrier is Al
2O
3, AlN, MgO, Ta
2O
5, or HfO
2The thickness of described insulating barrier is 0.3～5nm.
6, the magnetoresistance effect with linear magnetoresistance effect as claimed in claim 1 is characterized in that: described second soft ferromagnetic layer is ferrimagnet, semimetal magnetic material or magnetic semiconductor material; The thickness of described second soft ferromagnetic layer is 1～10nm.
7, the magnetoresistance effect with linear magnetoresistance effect as claimed in claim 6 is characterized in that: described ferrimagnet is Fe, Co, Ni, Pr, Nd, Sm, Gd, Te, Dy, Co-Fe, Co-Fe-B, Nd-Fe-B, Ni-Fe or Gd-Y ferromagnetic alloy;
Described semimetal magnetic material is Fe
3O
4, CrO
2, La
1-xSr
xMnO
3, La
1-xCa
xMnO
3, Pr
1-xSr
xMnO
3, or Co
2MnSi; Wherein, described La
1-xSr
xMnO
3In X be 0.16＜x＜1.0; Described La
1-xCa
xMnO
3In X be 0.18＜x＜0.5; Described Pr
1-xSr
xMnO
3In X be 0.3＜x＜1.0;
Described magnetic semiconductor material is Fe, Co, Ni or V;
Described magnetic semiconductor material or the ZnO, the TiO that mix for Mn
2, HfO
2Or SnO
2
Described magnetic semiconductor material or GaAs, the InAs, GaN or the ZnTe that mix for Mn.
8, the magnetoresistance effect with linear magnetoresistance effect as claimed in claim 1 is characterized in that: described pinning layer is antiferromagnetism metal and alloy thereof, and its thickness is 5～20nm.
9, the magnetoresistance effect with linear magnetoresistance effect as claimed in claim 8 is characterized in that: described pinning layer is the artificial pinning material of antiferromagnetism.
10, the magnetoresistance effect with linear magnetoresistance effect as claimed in claim 1 is characterized in that: described pinning layer is Cr layer, IrMn alloy-layer, PtMn alloy-layer, FeMn alloy-layer, CrPt alloy-layer, CoO layer or NiO layer;
Described pinning layer or be to form three layers of composite membrane by Co layer, Ru layer and Co layer;
Described pinning layer or be three layers of composite membrane forming by CoFe alloy-layer, Ru layer and CoFe alloy-layer;
Described pinning layer or be three layers of composite membrane forming by Co layer, Cu layer and Co layer;
Described pinning layer or be antiferromagnetism perovskite rare earth manganese oxide.
11, the described application of magnetoresistance effect on magnetic field sensor and magnetic head of one of claim 1～10 with linear magnetoresistance effect.
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| CN102082018B (en) * | 2009-11-26 | 2013-10-16 | 中国科学院物理研究所 | Magnetic multilayer film unit, preparation method and magnetic moment overturning method thereof |
| CN102110515B (en) * | 2009-12-29 | 2012-09-05 | 中国科学院物理研究所 | Magnetic multilayer film for organic magnetoresistance device and manufacturing method thereof |
| CN101834053B (en) * | 2010-05-19 | 2012-07-04 | 西南科技大学 | Ferromagnetic/anti-ferromagnetic multilayer film pinning material and preparation method thereof |
| CN102280574B (en) * | 2011-01-07 | 2014-04-16 | 江苏多维科技有限公司 | Thin film magnetoresistance sensing element, combination of multiple sensing elements, and electronic device coupled with combination |
| JP2013115400A (en) * | 2011-12-01 | 2013-06-10 | Sony Corp | Storage element, storage device |
| CN104947057B (en) * | 2015-06-04 | 2017-08-08 | 山西师范大学 | L10FePt Quito tunic wide field linear magnetoresistance sensor and preparation method thereof |
| CN105954692A (en) * | 2016-04-26 | 2016-09-21 | 中国科学院物理研究所 | Magnetic sensor with improved sensitivity and linearity |
| CN106338347A (en) * | 2016-11-02 | 2017-01-18 | 清华大学 | Interdigital electrode material for high temperature surface acoustic wave sensor and the preparation method thereof |
| CN107190242A (en) * | 2017-05-12 | 2017-09-22 | 华侨大学 | A kind of preparation method with a wide range of adjustable coercivity nano thickness rare-earth transition alloy firm |
| JP2019054054A (en) * | 2017-09-13 | 2019-04-04 | 東芝メモリ株式会社 | Magnetic device |
| WO2019111766A1 (en) * | 2017-12-04 | 2019-06-13 | 株式会社村田製作所 | Magnetic sensor |
| CN109166690B (en) * | 2018-08-27 | 2021-05-04 | 电子科技大学 | Anisotropic magneto-resistance based on multilayer exchange bias structure |
| CN110190183B (en) * | 2019-04-24 | 2021-01-01 | 中国科学院金属研究所 | High Fe-doped Fe with abnormal Hall effect1+yPreparation method of Te single crystal film |
| CN110412081B (en) * | 2019-07-16 | 2022-03-08 | 三峡大学 | Method for measuring included angle between magnetic moments of non-collinear antiferromagnetic coupling atoms in Rare Earth (RE) -transition group metal (TM) alloy |
| CN111983530B (en) * | 2020-07-21 | 2023-01-17 | 电子科技大学 | Magnetic insulator-based planar spin valve magneto-resistance sensor and preparation method thereof |
| EP3974857A1 (en) * | 2020-09-25 | 2022-03-30 | Showa Denko K.K. | Magnetic sensor |
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Assignee: Wuxi Nano MEMS, Inc. Assignor: Research Institute of Physics, Chinese Academy of Sciences Contract record no.: 2010320001105 Denomination of invention: Magnetic multilayer film with linear magnetoresistance effect and its application Granted publication date: 20090624 License type: Exclusive License Open date: 20070523 Record date: 20100902 |