CN100499156C - Organic electroluminescent display panel - Google Patents
Organic electroluminescent display panel Download PDFInfo
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- CN100499156C CN100499156C CNB2007100878459A CN200710087845A CN100499156C CN 100499156 C CN100499156 C CN 100499156C CN B2007100878459 A CNB2007100878459 A CN B2007100878459A CN 200710087845 A CN200710087845 A CN 200710087845A CN 100499156 C CN100499156 C CN 100499156C
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Abstract
This invention discloses an organic electric excited light emission display panel, the pixel structure of said display panel contains multiple sub-pixel regions including multiple organic light emitting elements connected in series set between the source of the film transistor and Vss voltage source, which has the advantage of low current and high stability and can be used in TFT base plate of the a-Si producing technology.
Description
Technical field
The present invention is about dot structure of a kind of organic electric-excitation luminescent displaying panel and preparation method thereof, refers to dot structure of a kind of light-emitting component that has a plurality of serial connections in inferior pixel region and preparation method thereof especially.
Background technology
Organic electro-luminescent display (organic electroluminescent display), Organic Light Emitting Diode (OLED) display for example, because have that size is frivolous, characteristics such as high-resolution, high-contrast, power saving and active illuminating, have the trend of placing oneself above LCD and becoming thin plane display main product of future generation.
Please refer to Fig. 1 and Fig. 2.Fig. 1 is the structural representation of the single light-emitting component of existing organic electric-excitation luminescent displaying panel, and Fig. 2 is the drive circuit structure schematic diagram of the dot structure of existing organic electric-excitation luminescent displaying panel.As shown in Figure 1, the light-emitting component of existing organic electric-excitation luminescent displaying panel includes substrate 10, and pile up in regular turn on the substrate 10 anode 12 is arranged, hole injection layer 14, hole transmission layer 16, organic luminous layer 18, electron transfer layer 20 and negative electrode 22.Light-emitting component with said elements stack manner is existing framework commonly used, generally is referred to as standard type (normal type) light-emitting component.The standard type light-emitting component has been a mature technology on manufacturing process, has the advantage of high qualification rate and high-reliability.
The dot structure that possesses the standard type light-emitting component in early days has following shortcoming in the actual operation of the a-Si TFT of collocation amorphous silicon (amorphous Si) manufacturing process.As shown in Figure 2, drive circuit structure with dot structure of standard type light-emitting component includes two thin-film transistor T1, T2 and capacitor C, thin-film transistor T1, T2 for example are N type metal-oxide semiconductor transistor (NMOS), wherein the grid of thin-film transistor T1 is connected with scan line, and its source electrode is connected with the grid of data wire with thin-film transistor T2 respectively with drain electrode; The source electrode of thin-film transistor T2 is connected with the Vdd voltage source, and its drain electrode then is connected to the anode 12 of light-emitting component.As shown in Figure 2, if adopt the N type metal-oxide semiconductor transistor of general amorphous silicon manufacturing process made, light-emitting component is between thin-film transistor T2 and Vss voltage source, and this configuration makes light-emitting component have influence on the starting voltage of thin-film transistor T2 because of element voltage rises in running, and causes the variation of thin-film transistor T2 electric current and more unstable.
Afterwards, on the thin-film transistor manufacturing process of collocation drive circuit, the P type metal-oxide semiconductor transistor (PMOS) that changes with low temperature polycrystalline silicon (LTPS) manufacturing process replaced, to reduce the influence that the light-emitting component cross-pressure rises.Yet the cost of LTPS is higher, and the panel uniformity is relatively poor, and the maturity deficiency of large-area substrates development.
In addition, the single dot structure of existing organic electric-excitation luminescent displaying panel only is provided with single light-emitting component, therefore the drive current (I) of light-emitting component is bigger, and big electric current not only makes the driving force of thin-film transistor T2 relatively poor (particularly for the lower amorphous silicon film transistor of electron drift rate), simultaneously big electric current is bigger to the power consumption of thin-film transistor T2, and can produce higher heat energy, and make light-emitting component Yin Gaowen and influence luminescent lifetime.
Summary of the invention
Dot structure that provides a kind of organic electric-excitation luminescent displaying panel and preparation method thereof is provided one of purpose of the present invention.
For achieving the above object, the invention provides a kind of organic electric-excitation luminescent displaying panel, comprise: substrate has a plurality of pixel regions and a plurality of thin film transistor region; A plurality of thin-film transistors are arranged at respectively in each thin film transistor region; A plurality of separators, be arranged in each pixel region and each thin film transistor region in described each pixel region is divided into a plurality of pixel regions and each described pixel region and thin film transistor region is separated, and be used for described each pixel region being divided into a plurality of pixel regions and each described pixel region and thin film transistor region being separated; And a plurality of organic illuminating elements, each organic illuminating element is arranged at respectively each time in the pixel region, and each organic illuminating element includes anode, organic luminous layer and negative electrode, be stacked in regular turn on this substrate, wherein be arranged in same pixel region, this negative electrode of this time pixel region is electrically connected with this anode of adjacent inferior pixel region, the described organic illuminating element that is positioned at same pixel region is connected with series system, and be electrically connected with this thin-film transistor with this negative electrode of the most contiguous another this time pixel region of this thin-film transistor in this same pixel region.
Aforesaid organic electric-excitation luminescent displaying panel, wherein said pixel region include red pixel district, green pixel district and blue pixel district.
Aforesaid organic electric-excitation luminescent displaying panel, wherein each anode has serial connection district, and this negative electrode of this time pixel region contacts with this serial connection district of adjacent inferior pixel region in same pixel region, is electrically connected with this anode of adjacent this time pixel region thus.
Aforesaid organic electric-excitation luminescent displaying panel, it is trapezoidal that wherein the vertical section of each separator is shaped as inversion wide at the top and narrow at the bottom.
Aforesaid organic electric-excitation luminescent displaying panel, wherein each separator has upper surface and inclined side surfaces is connected with this upper surface, and the angle that this upper surface and this inclined side surfaces form is about the 40-90 degree.
Aforesaid organic electric-excitation luminescent displaying panel, wherein each separator has upper surface and inclined side surfaces is connected with this upper surface, and the angle that this upper surface and this inclined side surfaces form is about the 40-70 degree.
Aforesaid organic electric-excitation luminescent displaying panel, wherein each separator covers substantially to this serial connection district of small part.
Aforesaid organic electric-excitation luminescent displaying panel, wherein the width of each separator is about the 5-20 micron.
Aforesaid organic electric-excitation luminescent displaying panel, wherein the width of each separator is about 10 microns.
Aforesaid organic electric-excitation luminescent displaying panel, wherein the height of each separator is about the 1-3 micron.
For achieving the above object, the present invention also provides a kind of dot structure of organic electric-excitation luminescent displaying panel.The dot structure of above-mentioned organic electric-excitation luminescent displaying panel includes: substrate has thin film transistor region, the first light-emitting component district and the second light-emitting component district; Thin-film transistor is arranged in this thin film transistor region of this substrate; First protective layer, be arranged at this substrate on, and this first protective layer has opening, exposes this thin-film transistor of part; The first anode is arranged on this first protective layer in this first light-emitting component district; Second plate is arranged on this first protective layer in this second light-emitting component district; Second protective layer, cover this first anode and this second plate to expose this first anode of part and this second plate to small part, and this first anode that exposes has first luminous zone and is connected in series the district with first, is connected in series the district with second and this second plate that exposes has second luminous zone; Separator is arranged on this second protective layer in this thin film transistor region, this first light-emitting component district and this second light-emitting component district substantially, and this separator is substantially around this first luminous zone and this second luminous zone; Organic luminous layer covers this first luminous zone of this first anode and this second luminous zone of this second plate; First negative electrode is covered on this first protective layer of part of this organic luminous layer of this first luminous zone and this thin film transistor region, and is electrically connected with this thin-film transistor by this opening of this first protective layer; Second negative electrode, be covered in this second luminous zone this organic luminous layer on, and first be connected in series the district and be electrically connected with this; And common negative electrode, be covered in outside this second luminous zone, and second be connected in series district and the electrical connection of Vdd voltage source with this.
The present invention also provides a kind of method of making organic electric-excitation luminescent displaying panel.Said method includes: substrate is provided, and this substrate has a plurality of pixel regions and a plurality of thin-film transistor, and each this thin-film transistor is arranged at respectively in each pixel region; Form first protective layer on this substrate, this first protective layer has an opening corresponding to each thin-film transistor, exposes to each thin-film transistor of small part; In each pixel region, form a plurality of anodes; Form second protective layer on this first protective layer and described anode, this second protective layer partly exposes each anode, to form the luminous zone and to be connected in series the district at each anode; Form a plurality of separators on this second protective layer, each separator is divided into pixel region a plurality of times with each pixel region, and each anode is positioned at its corresponding each time pixel region; Form organic luminous layer on the described anode, and make this organic luminous layer on described anode, form a plurality of organic light emission patterns that are not connected each other, respectively corresponding each anode by described separator; On this organic luminous layer, form cathode layer, and make this cathode layer on described organic light emission pattern, form a plurality of negative electrodes that are not connected each other by described separator, respectively corresponding each organic light emission pattern, and form a plurality of organic illuminating elements, and in each pixel region, this negative electrode of this time pixel region contacts with the serial connection district of adjacent anode, the negative electrode of another this time pixel region contacts with adjacent this thin-film transistor, makes that the described organic illuminating element in each pixel region is connected to this thin-film transistor with series system.
The present invention has the advantage of low current and high stability, also can be applicable to the TFT substrate of a-Si manufacturing process, in the application that reduces cost with large size panel, has great development potentiality.
Below be about detailed description of the present invention and accompanying drawing.Yet appended accompanying drawing is only for reference and aid illustration usefulness, is not to be used for the present invention is limited.
Description of drawings
Fig. 1 is the structural representation of the single light-emitting component of existing organic electric-excitation luminescent displaying panel.
Fig. 2 is the driving circuit structure schematic diagram of the dot structure of existing organic electric-excitation luminescent displaying panel.
Fig. 3 is the driving circuit structure schematic diagram of dot structure of the organic electric-excitation luminescent displaying panel of the preferred embodiment of the present invention.
Fig. 4 to Fig. 9 makes the method schematic diagram of organic electric-excitation luminescent displaying panel itself and dot structure for the preferred embodiment of the present invention.
Wherein, description of reference numerals is as follows:
10 substrates, 12 anodes
14 hole injection layers, 16 hole transmission layers
18 organic luminous layers, 20 electron transfer layers
22 negative electrodes, 30 substrates
32a pixel region of 32 pixel regions
34 thin film transistor regions, 36 thin-film transistors
40 openings, 42 anodes
42a luminous zone 42b is connected in series the district
44 second protective layers, 46 separators
48 organic luminous layer 48a organic light emission patterns
50 cathode layer 50a negative electrodes
52 organic illuminating elements
Embodiment
Please refer to Fig. 3.Fig. 3 is the drive circuit structure schematic diagram of dot structure of the organic electric-excitation luminescent displaying panel of the preferred embodiment of the present invention.As shown in Figure 3, the drive circuit structure of the dot structure of present embodiment includes two thin-film transistor T1, T2 and capacitor C, wherein thin-film transistor T1, T2 for example are nmos tft, wherein the grid of thin-film transistor T1 is connected with scan line, and its source electrode is connected with the grid of data wire with thin-film transistor T2 with drain electrode; The source electrode of thin-film transistor T2 is connected thin-film transistor T2 with a plurality of light-emitting components drain electrode then is connected with the Vss voltage source.The dot structure of present embodiment and existing dot structure difference mainly contain 2 points.At first in the present embodiment, light-emitting component is between the source electrode of Vdd voltage source end and thin-film transistor T2, can reduce the light-emitting component cross-pressure rises to the influence degree of thin-film transistor T2, particularly under the situation of using amorphous silicon film transistor, so configuration can increase the stability of light-emitting component.Secondly not only has single light-emitting component in the dot structure of present embodiment, but be provided with plural at least a plurality of light-emitting components, and connect with series system, and along with the light-emitting component number of series connection the more, the required drive current of single light-emitting component can be littler.For instance, if use the light-emitting component of two series connection, for the drive current I of single light-emitting component, the drive current of each light-emitting component can be reduced to I/2, but the total brightness of dot structure can't reduce, and if the light-emitting component number of series connection is N, then the size of the drive current of each light-emitting component can reduce to I/N, by that analogy.It is less to the power consumption of thin-film transistor T2 to reduce electric current, and can reduce the high temperature that heat energy causes, and then improves the life-span of light-emitting component.
Please refer to Fig. 4 to Fig. 9.Fig. 4 to Fig. 9 makes the method schematic diagram of organic electric-excitation luminescent displaying panel itself and dot structure for the preferred embodiment of the present invention, and wherein Fig. 4 to Fig. 7 is a generalized section with Fig. 9, and Fig. 8 then is the vertical view of dot structure shown in Figure 7.What deserves to be explained is that present embodiment is that example illustrates method of the present invention with amorphous silicon film transistor as the organic LED display panel of switch element, but method of the present invention is not limited thereto, and can be used for making the organic electric-excitation luminescent displaying panel of other type, as (solid phase crystalline, SPC) thin-film transistor of manufacturing process gained is the organic electric-excitation luminescent displaying panel of switch element with low temperature polycrystalline silicon or solid state crystallization.For emphasizing emphasis of the present invention place, only depict single dot structure in the diagram in addition.As shown in Figure 4, at first provide substrate 30, glass substrate for example, substrate 30 include a plurality of pixel regions 32 and a plurality of thin film transistor regions 34.Then produce thin-film transistor 36 on the substrate 30 in each thin film transistor region 34, wherein make the step of thin-film transistor 36 and known, no longer add narration at this by industry.
As shown in Figure 5, on substrate 30, form first protective layer 38 subsequently, and form a plurality of opening 40 respectively corresponding each thin-film transistor 36, and each opening 40 exposes the source electrode 36a of each thin-film transistor 36 at first protective layer 38.As shown in Figure 6, then in each pixel region 32, form a plurality of anodes 42.Present embodiment is that example illustrates method of the present invention with the organic electric-excitation luminescent displaying panel of bottom-emission type (bottom emission type), therefore the material of anode 42 uses transparent conductive material, for example tin indium oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO) or combinations thereof, but method of the present invention also can be used for making the organic electric-excitation luminescent displaying panel of top emission type (top emission type), and the material of anode 42 then can use metal material under this situation.Subsequently; on first protective layer 38 and anode 42, form second protective layer 44; and second protective layer, 44 parts expose the subregion at least of each anode 42; distinguish 42b to form luminous zone 42a at each anode 42 with being connected in series, wherein the position of the serial connection district 42b of each anode 42 is between the luminous zone 42a and the luminous zone 42a of adjacent anode 42 of itself.In addition, second protective layer 44 does not cover the opening 40 of first protective layer 38.
As Fig. 7 and shown in Figure 8, then on second protective layer 44, form a plurality of separators 46, each separator 46 is divided into pixel region 32a a plurality of times with each pixel region 32, and each anode 42 is positioned at its corresponding each time pixel region 32a.Each separator 46 is looked and is had a plurality of circuluses (as shown in Figure 8) by overlooking direction among present embodiment, and the number of the inferior pixel region 32a that the number of circulus is desired to be partitioned into according to each pixel region 32 determines.
As shown in Figure 9, form organic luminous layer 48 subsequently on anode 42, organic luminous layer 48 forms a plurality of organic light emission pattern 48a that are not connected each other on anode 42 by separator 46, and respectively corresponding each anode 42 of each organic light emission pattern 48a.Then, on organic luminous layer 48, form cathode layer 50 again, and equally the setting by separator 46 makes cathode layer 50 form a plurality of negative electrode 50a that are not connected each other on organic light emission pattern 48a, respectively corresponding each organic light emission pattern 48a forms organic illuminating element 52 thus in each time pixel region 32a.It is different luminous organic materials for the difference in red pixel district, green pixel district or blue pixel district that the material of organic luminous layer 48 is looked pixel region 32, for example the material of cathode layer 50 is then owing to the organic electric-excitation luminescent displaying panel of present embodiment is that the bottom-emission type is selected metal material for use, for example lithium, calcium, magnesium, barium or combinations thereof, if desire is made the organic electric-excitation luminescent displaying panel of top emission type, then the material of cathode layer 50 can use transparent conductive material.
The separator 46 of present embodiment is except being divided into each pixel region 32 a plurality of pixel region 32a, when follow-up formation organic luminous layer 48 and cathode layer 50, have more the function of define pattern, make organic luminous layer 48 and cathode layer 50 can directly in each time pixel region 32a, be defined as organic light emission pattern 48a and negative electrode 50a, and need not increase extra metallic shield (metal mask).In addition; negative electrode 50a in each time pixel region 32a can be directly contacts with the serial connection district 42b of the interior anode 42 of adjacent inferior pixel region 32a; then can directly contact with the source electrode 36a of thin-film transistor 36 as for the negative electrode 50a in the inferior pixel region 32a of the most close thin-film transistor 36, make the organic illuminating element 52 that is positioned at each pixel region 32 to be connected to thin-film transistor 36 by series system thus by the opening 40 of first protective layer 38.In addition, be positioned at respect to the negative electrode 50a on the serial connection district 42b of the anode 42 of the opposite side of thin-film transistor 36 and then be electrically connected with the Vdd voltage source.
In order to make each organic illuminating element 52 have good electrical connection effect, the structure setting of the separator of present embodiment has following certain characteristics.At first, it is trapezoidal that the vertical section of separator is shaped as inversion wide at the top and narrow at the bottom, that is each separator has upper surface and inclined side surfaces is connected with this upper surface.In the present embodiment, the angle that upper surface and inclined side surfaces form is about the 40-90 degree, and above-mentioned angle is serving as preferred between the 40-70 degree approximately.In addition, each separator 46 covers substantially to its corresponding serial connection of small part district 32b, and the width of each separator 46 is about the 5-20 micron, and serves as preferred to be about 10 microns, and the height of separator 46 then is about the 1-3 micron.
From the above, each pixel region of the dot structure of organic electric-excitation luminescent displaying panel of the present invention is provided with the organic illuminating element of a plurality of series connection, and therefore organic illuminating element has the advantage of low current and high stability between the source electrode and Vdd voltage source of thin-film transistor.In addition, each anode all has the serial connection district, the collocation separator be arranged so that the manufacturing process that need not change the standard type light-emitting component in method of the present invention, can make organic illuminating element be arranged between the source electrode and Vdd voltage source of thin-film transistor, and connect with series system.Thus, the present invention can be applicable to the TFT substrate of a-Si manufacturing process, in the application that reduces cost with large size panel, has great development potentiality.
The above only is the preferred embodiments of the present invention, and all equivalences of doing according to claims of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (10)
1. organic electric-excitation luminescent displaying panel comprises:
Substrate has a plurality of pixel regions and a plurality of thin film transistor region;
A plurality of thin-film transistors are arranged at respectively in each thin film transistor region;
A plurality of separators are arranged in each pixel region and each thin film transistor region, are used for described each pixel region being divided into a plurality of pixel regions and each described pixel region and thin film transistor region being separated; And
A plurality of organic illuminating elements, each organic illuminating element is arranged at respectively each time in the pixel region, and each organic illuminating element includes anode, organic luminous layer and negative electrode, be stacked in regular turn on this substrate, wherein be arranged in same pixel region, this negative electrode of this time pixel region is electrically connected with this anode of adjacent inferior pixel region, the described organic illuminating element that is positioned at same pixel region is connected with series system, and be electrically connected with this thin-film transistor with this negative electrode of the most contiguous another this time pixel region of this thin-film transistor in this same pixel region.
2. organic electric-excitation luminescent displaying panel as claimed in claim 1, wherein said pixel region include red pixel district, green pixel district and blue pixel district.
3. organic electric-excitation luminescent displaying panel as claimed in claim 1, wherein each anode has the serial connection district, and this negative electrode of this time pixel region contacts with this serial connection district of adjacent inferior pixel region in same pixel region, is electrically connected with this anode of adjacent inferior pixel region thus.
4. organic electric-excitation luminescent displaying panel as claimed in claim 3, it is trapezoidal that wherein the vertical section of each separator is shaped as inversion wide at the top and narrow at the bottom.
5. organic electric-excitation luminescent displaying panel as claimed in claim 4, wherein each separator has upper surface and inclined side surfaces is connected with this upper surface, and the angle that this upper surface and this inclined side surfaces form is the 40-90 degree.
6. organic electric-excitation luminescent displaying panel as claimed in claim 4, wherein each separator has upper surface and inclined side surfaces is connected with this upper surface, and the angle that this upper surface and this inclined side surfaces form is the 40-70 degree.
7. organic electric-excitation luminescent displaying panel as claimed in claim 3, wherein each separator covers substantially to this serial connection district of small part.
8. organic electric-excitation luminescent displaying panel as claimed in claim 1, wherein the width of each separator is the 5-20 micron.
9. organic electric-excitation luminescent displaying panel as claimed in claim 1, wherein the width of each separator is 10 microns.
10. organic electric-excitation luminescent displaying panel as claimed in claim 1, wherein the height of each separator is the 1-3 micron.
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TWI430442B (en) | 2010-10-28 | 2014-03-11 | Au Optronics Corp | Organic light emitting device and manufacturing method thereof |
CN102082165B (en) * | 2010-11-05 | 2013-04-17 | 友达光电股份有限公司 | Organic light-emitting device and method for manufacturing same |
CN102654972B (en) * | 2011-06-21 | 2015-08-12 | 京东方科技集团股份有限公司 | Active matrix organic light-emitting diode (AMOLED) panel and driving circuit thereof and method |
CN109300968B (en) * | 2018-11-22 | 2022-05-20 | 合肥鑫晟光电科技有限公司 | Display substrate, display device and display control method |
CN110047905B (en) * | 2019-05-16 | 2022-08-09 | 京东方科技集团股份有限公司 | Display substrate, display panel and display device |
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