CN100489151C - Target material with multilayer metal film - Google Patents
Target material with multilayer metal film Download PDFInfo
- Publication number
- CN100489151C CN100489151C CNB2006100967208A CN200610096720A CN100489151C CN 100489151 C CN100489151 C CN 100489151C CN B2006100967208 A CNB2006100967208 A CN B2006100967208A CN 200610096720 A CN200610096720 A CN 200610096720A CN 100489151 C CN100489151 C CN 100489151C
- Authority
- CN
- China
- Prior art keywords
- layer
- target
- metal film
- metal
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The present invention discloses one kind of target material with multilayer metal film, and the target material includes one non-metal substrate and three metal film layers in the thickness of 0.05-10 microns, with the middle metal film layer containing low smelting point metal(s) selected from Bi, Sn, Pb, Tl, Po and Se not less than 10 wt%. The target material with ceramic or glass substrate and three coated metal film layers has excellent adhesion between the metal layers and the substrate, and is especially suitable for use in magnetically controlled sputtering vacuum coating.
Description
Technical field
The present invention relates to the target that a kind of vacuum plating is used, being specifically related to a kind of is base material with ceramic-like or category of glass nonmetallic compound block, is used for the target of magnetic control sputtering vacuum coating.
Background technology
Vacuum coating technology is to utilize physics, chemical means to apply the film of one or more layers property at solid surface, thereby make solid surface have the high-performance that wear-resistant, high temperature resistant, corrosion-resistant, anti-oxidant, radioprotective, conduction, magnetic conduction, insulation or decoration etc. are better than solid material itself, reach the effect of improving the quality of products, prolonging product life, save energy and the remarkable technical economic benefit of acquisition.Therefore vacuum coating technology is described as one of important technology of tool development prospect, and has shown tempting market outlook in the development of hi-tech industrialization.Various vacuum coating technologies, especially vacuum vapor plating, magnetic control sputtering vacuum coating The Application of Technology begin the round Realization industrialization since the seventies in 20th century.
As low, the fireballing film formation method of a kind of cost, magnetron sputtering technique has obtained to use widely.In sputter procedure, target will stand the bombardment of charged ion, can produce a large amount of heat, thereby needs cooling.In the prior art, usually nonmetal target is bonded on the metal backing as solder flux by low melting point metal such as indium, tin etc., metal backing is cooled off by cooling water recirculation system, and absorbing and to take away heat, target then can be in the condition of high temperature of hundreds of ℃ in coating process.When target was pottery or glass, because target is different with the thermal expansivity of metal backing, target can be because of the metallized improper not prison welding problem that causes, come off from metal backing, caused the interruption or the failure of plated film production thus.Therefore, the material of plated film (target material) is restricted, and makes the pottery that in magnetron sputtering technique application is new or the effort of glass material be restricted, and is difficult to realize suitability for industrialized production.
People are conceived to study new target metallization and solve Welding Problems, but at present, the result of these researchs still can not solve the Welding Problems of different sorts pottery or glass target.
Summary of the invention
The object of the invention provides a kind of target of multilayer metal film, and it can be combined with metal backing when magnetron sputtering preferably, difficultly comes off, problem such as crackle, is applicable to the preparation of various potteries or category of glass nonmetallic compound film.
For achieving the above object, the technical solution used in the present invention is: a kind of target of multilayer metal film, comprise the substrate layer that non-metallic material constitute, dorsal part at described substrate layer is provided with the three-layer thin-film layer, the thickness range of every layer film layer is respectively 0.05～10 micron, wherein, contain the LMP metal that is no less than 10% weight ratio in the middle layer, described LMP metal is selected from one or more in bismuth, tin, lead, thallium, polonium, the selenium.
In the technique scheme, described substrate layer material is a kind of in pottery or the glass.
Further technical scheme, in the described thin film layer, the nexine material that joins with substrate layer is selected from one or more the alloy in metallic zinc, copper, lead, the silver; Cladding material is selected from one or more the alloy in argent, zinc, copper, the gold.
Described three-layer thin-film layer forms by vacuum plating mode or ion plating mode.In the vacuum plating mode is example, usually, in the preparation, at first cleans the surface of pottery or glass baseplate, with it as object to be coated; The material of nexine is and pottery or glass associativity soft metal or its alloy preferably, with the vacuum plating on substrate layer of this material; Then intermediate layer film is selected LMP metal or alloy for use, is coated on above the nexine with vacuum coating method; Last outer membrane, select for use with as the good metal or alloy of the metal mutual solubility of solder flux, be coated on above the middle layer with the method for vacuum plating.Promptly obtain required metallized target.During use, adopt indium or tin as solder flux, be heated be fused into pulpous state after brush on metal backing, get final product the metal outer of above-mentioned target is bonding.
Optimized technical scheme is that the thickness of described every layer film layer is between 0.5～2 micron.
Because the technique scheme utilization, the present invention compared with prior art has following advantage:
1. the present invention has been coated with three-layered metal film on pottery or glass baseplate layer, because the metal or alloy of LMP is adopted in the middle layer, fusing point is below 300 ℃, when therefore target was in the condition of high temperature in the coating process, fusion can take place in this layer, because coating as thin as a wafer, adsorptive power to base material is very big, simultaneously, the middle layer of molten can discharge the thermal stresses that causes because of huge temperature head between high temperature base material and the refrigerative metal backing, avoids base material to come off from metal backing.Thereby target of the present invention can adopt various potteries or glass baseplate, makes it to be suitable for adopting magnetron sputtering technique to realize vacuum plating.
2. the present invention is owing to adopt the triple-layer coating structure, and nexine can adopt and pottery or the good soft metal of glass associativity, guarantees the bonding properties of rete and base material; Skin can employing and solder flux metal mutual solubility preferred metal such as indium, tin, thereby guarantees the excellent bonds of target and metal backing.
Description of drawings
Accompanying drawing 1 is the structural representation of the embodiment of the invention one.
Wherein: 1, substrate layer; 2, nexine; 3, middle layer; 4, skin.
Embodiment
Below in conjunction with drawings and Examples the present invention is further described:
Embodiment one: shown in accompanying drawing 1, a kind of target of multilayer metal film comprises the substrate layer 1 that adopts stupalith to make, and is provided with the three-layer thin-film layer at the dorsal part of described substrate layer 1, and wherein, nexine 2 materials that join with substrate layer are zinc, and thickness is 5 microns; The material in middle layer 3 is the LMP bismuth metal, and thickness is 4 microns; Outer 4 material is a silver, and thickness is 5 microns, and described three-layer thin-film layer constitutes by the vacuum plating mode.
In the present embodiment, the zinc of nexine can combine preferably with stupalith, can guarantee combining of coating and base material; Outer field silver is good with the indium mutual solubility of using as solder flux, can guarantee combining of target and backboard metal in use, prevents to come off; The molten point of the bismuth in middle layer is 271 ℃, in use, working temperature about 300 ℃ can make bismuth dissolve, thereby can discharge the stress between ceramic base material layer and the metal backing, avoid target to crack or come off, simultaneously, the very thin thickness of bismuth layer can make target be adsorbed on the metal backing effectively.
Embodiment two: a kind of target of multilayer metal film, comprise the substrate layer that adopts glass material to make, dorsal part at described substrate layer is provided with the three-layer thin-film layer, wherein, the nexine material that joins with substrate layer is selected from a kind of in zinc, copper, lead, the silver, thickness is 1 micron, the material in middle layer is the LMP metal, thickness is 1.5 microns, described LMP metal is selected from a kind of in bismuth, tin, lead, thallium, polonium, the selenium, cladding material is selected from a kind of in silver, zinc, copper, the gold, and thickness is 1 micron, and described three-layer thin-film layer constitutes by the vacuum plating mode.
Embodiment three: a kind of target of multilayer metal film, comprise the substrate layer that adopts stupalith to become, dorsal part at described substrate layer is provided with the three-layer thin-film layer, and wherein, the nexine material that joins with substrate layer is the zinc lead alloy, thickness is 10 microns, the material in middle layer is a terne metal, and thickness is 8 microns, and cladding material is silver-colored zinc alloy, thickness is 10 microns, and described three-layer thin-film layer constitutes by the vacuum plating mode.
Embodiment four: a kind of target of multilayer metal film, comprise the substrate layer that adopts glass material to become, dorsal part at described substrate layer is provided with the three-layer thin-film layer, wherein, the nexine material that joins with substrate layer is a zinc, copper, plumbous, the alloy that in the silver two or three constitutes, thickness is 0.2 micron, the material in middle layer is a bismuth, tin, plumbous, thallium, polonium, the alloy that in the selenium two or three constitutes, thickness is 0.1 micron, cladding material is a silver, zinc, copper, the alloy that in the gold two or three constitutes, thickness is 0.1 micron, and described three-layer thin-film layer constitutes by the vacuum plating mode.
Embodiment five: a kind of target of multilayer metal film, comprise the substrate layer that adopts stupalith to become, dorsal part at described substrate layer is provided with the three-layer thin-film layer, and wherein, the nexine material that joins with substrate layer is the alloy that contains the zinc of 80% weight, thickness is 2 microns, the material in middle layer is the alloy that contains the selenium of 80% weight, and thickness is 3 microns, and cladding material is a copper, thickness is 1 micron, and described three-layer thin-film layer constitutes by the vacuum plating mode.
Claims (4)
1. the target of a multilayer metal film, comprise the substrate layer [1] that non-metallic material constitute, it is characterized in that: the dorsal part at described substrate layer [1] is provided with the three-layer thin-film layer, the thickness range of every layer film layer is respectively 0.05～10 micron, wherein, contain the LMP metal that is no less than 10% weight ratio in the middle layer [3], described LMP metal is selected from one or more in bismuth, tin, lead, thallium, polonium, the selenium; In the described thin film layer, nexine [2] material that joins with substrate layer [1] is selected from one or more the alloy in metallic zinc, copper, lead, the silver; Outer [4] material is selected from one or more the alloy in argent, zinc, copper, the gold.
2. the target of multilayer metal film according to claim 1 is characterized in that: described substrate layer material is a kind of in ceramic-like or the category of glass nonmetallic compound.
3. the target of multilayer metal film according to claim 1 and 2, it is characterized in that: described three-layer thin-film layer forms by vacuum plating mode or ion plating mode.
4. the target of multilayer metal film according to claim 1, it is characterized in that: the thickness of described every layer film layer is between 0.5～2 micron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100967208A CN100489151C (en) | 2006-10-11 | 2006-10-11 | Target material with multilayer metal film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100967208A CN100489151C (en) | 2006-10-11 | 2006-10-11 | Target material with multilayer metal film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1932071A CN1932071A (en) | 2007-03-21 |
| CN100489151C true CN100489151C (en) | 2009-05-20 |
Family
ID=37878099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100967208A Expired - Fee Related CN100489151C (en) | 2006-10-11 | 2006-10-11 | Target material with multilayer metal film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100489151C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI410510B (en) * | 2010-09-15 | 2013-10-01 | Univ Nat Cheng Kung | Target precursor structure |
| TWI413704B (en) * | 2010-09-15 | 2013-11-01 | Univ Nat Cheng Kung | Process for producing target |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110305354B (en) * | 2019-07-08 | 2021-10-01 | 凯盛科技股份有限公司蚌埠华益分公司 | Coating method for forming colorful film by using PET film and application of coating method in glass cover plate |
-
2006
- 2006-10-11 CN CNB2006100967208A patent/CN100489151C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI410510B (en) * | 2010-09-15 | 2013-10-01 | Univ Nat Cheng Kung | Target precursor structure |
| TWI413704B (en) * | 2010-09-15 | 2013-11-01 | Univ Nat Cheng Kung | Process for producing target |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1932071A (en) | 2007-03-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5672536B2 (en) | Cylindrical sputtering target and manufacturing method thereof | |
| US5593082A (en) | Methods of bonding targets to backing plate members using solder pastes and target/backing plate assemblies bonded thereby | |
| CN101648303A (en) | Welding method of target materials and back plates | |
| CN101543923B (en) | Method for welding target material and back board | |
| CN108715992A (en) | A kind of integrated circuit ceramic circuit plate surface copper-graphite alkene composite coating and preparation method thereof | |
| JP5799154B2 (en) | Sputtering target and manufacturing method thereof | |
| CN105906222A (en) | Tempered vacuum glass | |
| CN101543924A (en) | Method for welding target material and back board | |
| CN102809769A (en) | Solar energy reflector and preparation method thereof | |
| CN100489151C (en) | Target material with multilayer metal film | |
| KR20100008345A (en) | Sputter target assembly having a low-temperature high-strength bond | |
| JP5672537B2 (en) | Cylindrical sputtering target and manufacturing method thereof | |
| CN102409300B (en) | Oxide ceramic sputtering target and preparation method thereof and used brazing alloy | |
| CN203708628U (en) | Ceramic-copper composite substrate with high thermal conductivity | |
| CN102409299A (en) | Oxide ceramic sputtering target, preparation method thereof and brazing alloy used by oxide ceramic sputtering target | |
| CN110937911A (en) | Target assembly forming method | |
| US8448842B1 (en) | Advanced copper bonding (ACB) with ceramic substrate technology | |
| CN108754437A (en) | Sputtering target | |
| CN102814585B (en) | Method for welding target and rear plate | |
| CN103031524B (en) | Method for realizing metallization of back of indium tin oxide (ITO) target material by ion deposition | |
| US20110240115A1 (en) | Doped buffer layer | |
| CN207678068U (en) | A kind of ultra-high conducting heat type ceramic substrate | |
| KR100867756B1 (en) | Method for manufacturing substrate of ceramics pcb using high rate and high density magnetron sputtering way | |
| CN110246769B (en) | Eutectic bonding method based on in-situ metallization of cation conductive metal and glass surface | |
| WO2021036544A1 (en) | Magnesium-antimony-based thermoelectric element, preparation method therefor and use thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: CHANGSHU SUZHOU UNIVERSITY LOW CARBON APPLICATION Free format text: FORMER OWNER: SUZHOU UNIVERSITY Effective date: 20130627 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 215006 SUZHOU, JIANGSU PROVINCE TO: 215200 SUZHOU, JIANGSU PROVINCE |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20130627 Address after: 215200. 1, 68 southeast Avenue, Southeast Economic Development Zone, Jiangsu, Changshu Patentee after: Changshu Suda Applied Low Carbon Technology Research Institute Co., Ltd. Address before: Ten Azusa Street Canglang District of Suzhou City, Jiangsu Province, No. 1 215006 Patentee before: Soochow University |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090520 Termination date: 20161011 |