CN100461540C - Contact tip structure for microelectronic interconnection elements - Google Patents

Abstract

Contact end structures are prepared on a sacrificial substrate to facilitate the later connection to an interconnection element. The interconnection element includes a composite interconnection element, a monomer interconnection element, a tungsten needle of a probe card, a contact male tab of a diaphragm probe and similar elements. The spatial relationship between the end structures can be defined in high precision according to a lithographic printing mode. The metallurgy of the end structures has no relationship with the metallurgy of the interconnection elements which are connected through brazing, plating or similar methods. The contact end structures can be easily formed into topology (small, precise, salient and non-plane) contact structures, such as sectional sprayed shape. Thus, the contact end structures can be better electrically connected to terminals of electronic elements in a clamped type. The application describes the slender contact end structures which play a role of elastic contact elements when used. Therefore, the contact end structures are not required to be connected to the elastic contact elements. Generally speaking, the invention aims at manufacturing (pre-preparing) more precise contact end structures (ends) and connecting the contact end structures to more imprecise interconnection elements to improve the overall capacity of the finally formed interconnection elements with ends.

Description

The contact tip structure that is used for microelectronic interconnection elements

The application is that denomination of invention is dividing an application of " contact tip structure and the manufacture method thereof that are used for microelectronic interconnection elements ", application number are 97190558.4, the applying date is on May 15th, 1997 China's application.

Technical field

The present invention relates to be used for interconnection (contact) element of microelectronic applications, especially relate to such contact element, promptly they are elasticity (elastic force) contact elements, are adapted at realizing between the electronic component that pressure connects.

Quoting mutually of related application

Present patent application is the part continuation application that has unsettled U.S. Patent application 08/452255 (calling " female (application) case " in the following text) and its corresponding PCT number of patent application PCT/US95/14909, U.S. Patent application 08/452255 is application on May 26 nineteen ninety-five, PCT number of patent application PCT/US95/14909 accepts November 13 nineteen ninety-five, U.S. Patent application 08/452255 and PCT number of patent application PCT/US95/14909 are the part continuation applications that has unsettled U.S. Patent application 08/340144 and its corresponding PCT number of patent application PCT/US94/13373, U.S. Patent application 08/340144 is application on November 15th, 1994, PCT number of patent application PCT/US94/13373 is application on November 16th, 1994, U.S. Patent application 08/340144 and PCT number of patent application PCT/US94/13373 are the part continuation applications that has unsettled U.S. Patent application 08/152812, U.S. Patent application 08/152812 is that to accept on November 16th, 1993 (be United States Patent (USP) 5476211 now, authorize December 19 nineteen ninety-five), all these applications are hereby incorporated by reference.

Present patent application still is the part continuation application of the U.S. Patent application in the following total trial:

08/526246, accept (PCT/US95/14843, accept November 13 nineteen ninety-five) September 21 nineteen ninety-five;

08/554902, accept (PCT/US95/14844, accept November 13 nineteen ninety-five) November 9 nineteen ninety-five;

08/558332, accept (PCT/US95/14885, accept November 15 nineteen ninety-five) November 15 nineteen ninety-five;

Accepted (PCT/US96/08328, on May 28th, 1996 accepted) on February 15th, 08/602179,1996;

Accepted (PCT/US96/08117, on May 24th, 1996 accepted) on February 21st, 60/012027,1996;

Accepted (PCT/US96/08274, on May 28th, 1996 accepted) on March 5th, 60/012878,1996;

Accepted (PCT/US96/08276, on May 28th, 1996 accepted) on March 11st, 60/013247,1996; With

Accepted (PCT/US96/08107, on May 24th, 1996 accepted) on May 17th, 60/005189,1996,

All these applications (except listed temporary patent application) are the part continuation applications of aforementioned female case, and all these applications are hereby incorporated by reference.

Present patent application also is the part continuation application of the U.S. Patent application in the following total trial:

On June 27th, 60/020869,1996 accepted;

On August 22nd, 60/024405,1996 accepted;

On August 26th, 60/024555,1996 accepted;

On November 13rd, 60/030697,1996 accepted;

On December 31st, 60/034053,1996 accepted; With

On February 18th, 08/802504,1997 accepted, and this application is hereby incorporated by reference by Eldridge, Grube, Khandros and Mathieu application.

Background technology

Generally speaking, the interconnection between the electronic component can be divided into two primary categories: " more permanent " and " segregative ".

" more permanent " is in case an example that connects is to be welded to connect. and two electronic components are welded to each other, and just must adopt sealing-off technology in order to separate these two elements. and such as the wire bonding between the lead (perhaps the inner of lead frame finger joint) of a semiconductor chip and a semiconductor package casing is another example that " more permanent " is connected.

The rigidity pin that the example that " segregative " connects is an electronic component is incorporated in the elastic socket element of another electronic component.

Another kind of segregative connection is that such interconnection element is realized, that is, interconnection element this as flexible or elastic force, perhaps be installed among the elasticity media or on.An example of this elastic contact element is the tungsten pin of probe card (probe card) element.This elastic contact element is used for normally realizing temporary transient crimping that between the terminal of the element of its installation and another element another element is for example semiconductor detected element (DUT).The problem relevant with the tungsten pin comprises that being difficult to grind its termination makes it have suitable shape, and they can not be worked lastingly, and they need frequent reprocessing.

Usually, for realizing contacting, need certain minimum contact force with the reliable pressure of electronic component (for example terminal on the electronic component).For example, for guaranteeing that realization is electrically connected with the reliable compression joint type of a terminal of an electronic component, and described electronic component may be subjected to the pollution of the film on its terminal surfaces or have corrosion or oxidation product in its surface, contact (load) power that may need about 15 grams (comprise little, connect (contravention) head by each and measure) so to 2 grams or littler and greatly to 150 grams or bigger.

Except forming and keep the suitable minimum contact force, another key factor is shape (comprising surface texture) and the metallurgical mode that is used to realize with the end of the elastic contact element of the crimping of terminals of electronic components.Get back to example as the tungsten pin of probe member, along with the diameter of these tungsten pins becomes more and more littler, the metallurgy of contact end obviously is subjected to the restriction of the metallurgy of interconnection element (being the tungsten pin), thereby makes the corresponding difficulty more that becomes of required form of controlling or forming its contact end.

Under specific circumstances, contact element itself is not have flexiblely, but is supported by elastomeric element. lamina membranacea probe (membrane probe) is the example of this situation, and wherein an elasticity lamina membranacea is provided with a plurality of micro-boss.Moreover, made the required technical limitations of this interconnection element shape of contact portion of this interconnection element and the design alternative of metallurgy.

An example of elongated elastic contact element is disclosed in female case (PCT/US95/14909), this mother's case has been described the preparation as the resilient contact structure (flexible member) of " compound " interconnection element, that is: a freestanding line bar (wire stem) (elongated member) is installed on a terminal of an electronic component, the line bar is carried out shaping, the line of cut bar makes it to become freestanding, and brush freestanding line bar, so that the final freestanding flexible member that forms has required elasticity.Be coated with on the adjacently situated surfaces that brush material also extends to the terminal that the line bar will install continuously, be firmly-fixed to terminal with the combined interconnecting component that will finally form.Though these elongated composite elastic interconnection elements will have benefited from the present invention, the invention is not restricted to this.

Summary of the invention

An object of the present invention is to provide a kind of improved technology, this technology is used to make interconnection element, in particular for the interconnection microelectronic element.

Another object of the present invention is that the resilient contact structure (interconnection element) that is fit to realize with terminals of electronic components crimping will be provided.

A further object of the present invention is that a kind of technology will be provided, and this technology is used for the contact tip structure of pre-preparation is connected to existing contact element.

Another purpose of the present invention is that the contact tip structure that can prepare independently will be provided, and described independent preparation is meant the influence that is not subjected to the interconnection element that will connect.

According to the present invention, contact tip structure on sacrificial substrate, is connected to other (existing) interconnection element by pre-preparation subsequently, and sacrificial substrate is removed (separating with " belt end " interconnection element of final formation) then.

According to electric contact structure of the present invention, comprising: a plurality of interconnection elements, they are to be provided with mutually with first spacing; A plurality of contact tip structures, they are fixed to corresponding interconnection element by bound fraction, these contact tip structures are to be provided with mutually with second spacing, second gap ratio, first spacing is more tight, wherein, be fixed to corresponding interconnection element and with before sacrificial substrate is separated, described a plurality of contact tip structures are forming on the sacrificial substrate and are being on the precalculated position of sacrificial substrate at a plurality of contact tip structures.

The present invention also provides a kind of contact tip structure, is suitable for being connected to the end of elongated interconnection element, and it comprises: a plurality of contact tip structures, and they are prepared on the sacrificial substrate and are in precalculated position on this sacrificial substrate; Wherein, in use, after this contact tip structure was connected to corresponding a plurality of elongated interconnection elements that are pre-existing in, sacrificial substrate was separated with this contact tip structure.

The invention still further relates to a kind of cantilever type end structure, be suitable for being connected to the termination of pillar, it comprises: a plurality of cantilever type end structures with the raised structures that partly extends from inner termination, wherein said a plurality of cantilever type end structure is forming on the precalculated position of a sacrificial substrate and is residing on this sacrificial substrate, wherein, in use, after its external end head part part was bonded to the end that is pre-existing in pillar, this sacrificial substrate was separated with the cantilever type end structure at the cantilever type end structure.

Described interconnection element can be elongated, can not be elongated perhaps, and can be or be not flexible (elastic force) contact element.Described interconnection element can be " compound " or " monomer ", and comprises the tungsten pin of probe card and the boss element of lamina membranacea probe.

According to a feature of the present invention, contact tip structure is fixed to interconnection element by brazing or by plating. and perhaps, contact tip structure can adopt conductive adhesive (for example filling the epoxy resin of silver) or similar material to be connected to interconnection element.

According to a feature of the present invention, the various metallurgical methods and the topological structure (topology) (contact structures) that are used for contact tip structure have been described here.

According to an aspect of the present invention, adopt conventional semiconductor processing technology (for example photoetching, deposit), comprise Micrometer-Nanometer Processing Technology and " machinery " technology, can easily a plurality of contact tip structures be prepared on the sacrificial substrate according to the very high degree of precision tolerance, make them have predetermined spatial relationship each other. as long as contact tip structure is kept and is on the sacrificial substrate, these tolerances and spatial relationship just keep well.With after interconnection element is connected, these tolerances will be kept by interconnection element at contact tip structure.

Generally speaking, the present invention makes the formation of electric contact structure become easy by a plurality of contact tip structures with more accurate mutual alignment relation being connected to corresponding a plurality of interconnection element that can be provided with by the correlation of rough (inaccuracy).Preferred version is, each contact tip structure has a topological contact structures part on its body portion, this contact structures part concerns setting with respect to the topological contact structures with other with more accurate, so the body portion of end structure does not need accurate location each other. adopt conventional semiconductor fabrication process to comprise Micrometer-Nanometer Processing Technology, by etching sacrificial substrate with the contact tip structure of pre-preparation on it, can easily form these topological contact structures with high positional precision, they can take pyramid, truncated pyramid and analogous shape.

According to a feature of the present invention, described various sacrificial substrate here and be used for the method that the end structure with pre-preparation separates with its residing sacrificial substrate.

For example, sacrificial substrate can be a silicon wafer, and its adopts Micrometer-Nanometer Processing Technology to handle and has recess it comprises structure (feature), and contact tip structure wherein of the present invention prepares by one or more conductive metal layers are deposited in recess and the structure.

The present invention allows the pre-preparation contact tip structure, and these contact tip structures have surface texture (roughness and shape; Geometry, topological structure) and metallurgical mode, and its size be not subjected to the material relevant and the restriction of condition with making the interconnection element that will connect.For the people that these contact tip structures need be connected to its interconnection element, prefabricated sacrificial substrate that has a plurality of contact tip structures is suitable for itself as a finished product sale on it.

A key character of the present invention is, can easily on a sacrificial substrate, prepare a plurality of contact tip structures with the very high degree of precision tolerance, for example, by adopting known semiconductor fabrication process such as mask, lithographic printing and deposit to control its size and spacing.

According to an aspect of the present invention, can prepare so elongated contact tip structure, promptly they itself are suitable for playing the effect of elastic contact element, and do not need to be connected to existing interconnection element.

These elongated contact tip structures that play the elastic contact element effect can be planar shaped, and be connected to a lip-deep conductive pillar of an electronic component at its pedestal end, so just reserve a space between the surface of elongated contact tip structure and electronic component, the contact jaw of elongated contact tip structure can be at this space bias internal.

These elongated contact tip structures that play the elastic contact element effect can also be three-dimensional, and promptly its pedestal end is offset from its center body portion in one direction, and its contact jaw is offset from its center body portion on an opposite direction.

Elongated contact tip structure of the present invention can have the orientation (for example L-R-L-R) of alternate, thereby forms ratio in the big spacing in its contact jaw place between its pedestal end.

Elongated contact tip structure of the present invention can have the length (for example weak point-length-weak point-length) of alternate, thereby forms ratio in the big spacing in its contact jaw place between its pedestal end.

The invention discloses such technical characterictic: be in contact with it between the end the tapered convergent of the width of elongated contact tip structure and/or thickness at its pedestal end.

The invention discloses the technology that is used for revising (adjustment) power, the elongated contact tip structure of described power produces in response to the contact force that is applied to its contact jaw.

The invention provides a kind of technology, this technology is used for making ' accurately ' (extremely uniformly and can reproduce with high tolerance) contact tip structure, and they ' are connected ' to than ' coarse ' interconnection element.Because some restrictions relevant with making interconnection element usually need be taked certain trading off between the overall space uniformity of termination geometry and metallurgical mode and interconnection element.And if they can not be reprocessed, they just must be replaced.The present invention makes the termination have the accurate uniformity that photoetching process reaches by the influence of the correlated condition of the interconnection element that termination metallurgy, geometry and topological structure is not subjected to will be connected, has solved this restricted problem.

By means of the following description, other purpose of the present invention, feature and advantage will become clear.

Description of drawings

Now the preferred embodiments of the present invention are discussed in detail, the example of these embodiment is showed in the accompanying drawing.Though the present invention will be described by means of these preferred embodiments, should be appreciated that this does not really want the spirit and scope of the present invention are confined to these certain embodiments.

For describe clear for the purpose of, here in the end view of Zhan Shiing, usually be that to have only the part of end view be to illustrate with profile, and other parts may illustrate with the perspective view form.

For describe clear for the purpose of, here among the figure of Zhan Shiing, the size of particular element usually is (not the drawing in proportion with respect to other element among the figure) of amplification.

Figure 1A is the partial, exploded perspective view of a generality embodiment of the present invention, and it illustrates contact tip structure (102) and the interconnection element that will be connected (106) according to pre-preparation of the present invention.

Figure 1B is a side cutaway view, and it illustrates, and according to the present invention, the contact tip structure of Figure 1A (102) is connected to the interconnection element (106) of Figure 1A by brazing.

Fig. 1 C is a side cutaway view, and wherein local it illustrates with perspective representation, and according to the present invention, the contact tip structure of Figure 1A (102) is connected to the interconnection element (106) of Figure 1A by plating.

Fig. 1 D is a side cutaway view, and it illustrates, and according to the present invention, after sacrificial substrate (104) was removed, the contact tip structure of Figure 1A (102) was connected to the interconnection element (106) of Figure 1A by brazing (suitable with Figure 1B).

Fig. 2 A is a profile, and it illustrates the technology that is used to prepare the contact tip structure of interconnection element according to of the present invention.

Fig. 2 B is a profile, and it illustrates according to the further step in the technology of Fig. 2 A of the present invention.

Fig. 2 C is the local end view of representing with profile, and it illustrates, and according to the present invention, the contact tip structure of Fig. 2 B (220) is connected to existing interconnection element (252).

Fig. 2 D is the local end view of representing with profile, and it illustrates according to next (at last) step of the present invention, wherein: after sacrificial substrate (202) removal, the interconnection element (252) of Fig. 2 C is connected with the contact tip structure (220) of Fig. 2 B.

Fig. 3 A is a side cutaway view according to an embodiment of the invention, and contact tip structure wherein of the present invention is fixed to a kind of elongated interconnection element.

Fig. 3 B is a side cutaway view according to another embodiment of the invention, and contact tip structure wherein of the present invention is fixed to a kind of elongated interconnection element.

Fig. 3 C is a side cutaway view according to still a further embodiment, and contact tip structure wherein of the present invention is fixed to a kind of interconnection element.

Fig. 4 A is a side cutaway view, and it illustrates the technology that is used to prepare the contact tip structure of multilayer according to of the present invention.

Fig. 4 B is a side cutaway view, and it illustrates the technology and the technology of separating sacrificial substrate that is used for going up in a sacrificial substrate (424) contact tip structure of formation (440) according to of the present invention.

Fig. 5 A is a perspective view, and it illustrates according to the present invention the first step of a plurality of contact tip structures of preparation on a sacrificial substrate.

Fig. 5 B is that it illustrates according to the present invention another step of preparation contact tip structure on a sacrificial substrate along the side cutaway view of the line 5B-5B intercepting that runs through Fig. 5 A.

Fig. 5 C is a side cutaway view, and it illustrates according to the present invention a step again of preparation contact tip structure on a sacrificial substrate.

Fig. 5 D is a side cutaway view, and it illustrates according to the present invention a contact tip structure that has been prepared on the sacrificial substrate.

Fig. 5 E is a perspective view, and it illustrates according to the present invention a contact tip structure that has been connected to an interconnection element.

Fig. 5 F is a side cutaway view, and it illustrates according to the present invention a contact tip structure that has been connected to another interconnection element.

Fig. 6 A is a perspective view, and it illustrates the technology that preparation according to the present invention is used to make a sacrificial substrate of contact tip structure.

Fig. 6 B is a perspective view, and it illustrates a contact tip structure (620) that is connected to an end of an interconnection element (being represented by dotted lines) according to of the present invention.

Fig. 7 A-7C is a profile, and they illustrate the processing step of making elongated contact tip structure according to of the present invention on a sacrificial substrate.

Fig. 7 D is a perspective view, and it illustrates according to the present invention an elongated contact tip structure that forms on a sacrificial substrate.

Fig. 7 E is a perspective view, and it illustrates a plurality of elongated contact tip structure that forms according to the present invention on a sacrificial substrate.

Fig. 7 F is a side cutaway view, and it illustrates the technology that is used for elongated contact tip structure (720) is mounted to an electronic component (734) according to of the present invention.

Fig. 8 is a perspective view according to an embodiment of the invention, and it illustrates the preparation method of a plurality of elongated contact tip structures of the length with alternate.

Fig. 9 A is a profile, and it illustrates a kind of elongated contact tip structure that is suitable for use as resilient interconnection elements (elastic contact element) according to of the present invention.

Fig. 9 B is the plane graph according to elastic contact element of the present invention shown in Fig. 9 A.

Fig. 9 C is the profile according to another embodiment of elastic contact element of the present invention.

Fig. 9 D is the amplification profile of the part of the elastic contact element shown in Fig. 9 C.

Fig. 9 E is the profile of an embodiment again according to elastic contact element of the present invention.

Figure 10 A-10D is a side cutaway view, and they illustrate the technology that is used to revise the mechanical property of elongated contact tip structure (elastic contact element) according to of the present invention.

Figure 11 A and 11B are the perspective views according to the elastic contact element of variation of the present invention.

Embodiment

The present invention is in order to prepare contact tip structure and subsequently they to be connected to existing interconnection element generally speaking, to obtain one or more following benefits:

(a) contact tip structure of the present invention can easily form different surface textures, roughness and shape (geometry, topological structure), this termination that is suitable for the interconnection element that will connect especially is the terminal metallurgy of contacting electronic element the most at last, and irrelevant with the surface texture of the interconnection element that will be connected, the feasible best crimping that all can realize the special terminal of " belt end " interconnection element and electronic component for different application;

(b) contact tip structure of the present invention can easily adopt the preparation of any suitable metallurgy, described metallurgy comprise the metallurgy with the interconnection element that will be connected that have nothing to do fully with dissimilar metallurgy; With

(c) contact tip structure of the present invention can be easily according to split-hair tolerance preparation, this be with respect to a plurality of contact tip structures flatness (planarity) and for the spacing between each of a plurality of contact tip structures, be not subjected to the influence of the tolerance limits relevant in fact with the interconnection element that will connect; With

(d) contact tip structure of the present invention can easily be prepared into and have important size (for example diameter), and the corresponding size (for example cross section diameter) of this size and the interconnection element that will be connected is irrelevant and greater than this corresponding size.

Existing interconnection element will have benefited from contact tip structure of the present invention such as elongated and/or flexible interconnection element and be connected on it.

" generality " embodiment

Figure 1A illustrates a recapitulative embodiment 100 of the present invention, wherein, a plurality of (shown in the figure wherein four) contact tip structure 102 is according to following described mode, pre-preparation is on a support (sacrifice) substrate 104. corresponding a plurality of (showing wherein four) interconnection element 106 (end and the termination of only having drawn these elongated interconnection elements) also is shown among the figure, they prepare its free end 106a is connected to contact tip structure 102 (otherwise perhaps). and the free end 106a of elongated interconnection element 106 is remote (ends) with respect to the other end (not shown) of elongated interconnection element 106, the latter is normally extended from a surface of electronic component (not shown), and described element is such as semiconductor device, MULTILAYER SUBSTRATE, semiconductor package casing etc.

Support (sacrifice) substrate 104 that has the contact tip structure 102 of pre-preparation on it be with the preparation separately in advance of elongated interconnection element 106 diverse technologies.

Figure 1B shows the next step that contact tip structure 102 is connected to elongated interconnection element 106 by copper (firmly) weldering with the form of end view. and angle welding 108. contact tip structures 102 of the last formation of having drawn among the figure still are on the sacrificial substrate 104 according to predetermined mutual spatial relationship. and Figure 1B is also as adopting conductive adhesive (for example filling the epoxy resin of silver) or similar material to be connected to the schematic diagram of the contact tip structure 102 of elongated interconnection element.

Fig. 1 C shows the next step that contact tip structure 102 is connected to the another kind of mode of elongated interconnection element 106 with the form of end view, this connected mode is to adopt metal material 110, nickel for example, at least the end of the junction of brushing contact tip structure 102 and adjacent elongated interconnection element 106, though such as passing through plating. do not illustrate especially, but should be appreciated that being coated with brush material can extend along the whole length of (covering) elongated interconnection element 106.

Fig. 1 D shows a step after the step shown in Figure 1B or Fig. 1 C with the form of end view, wherein, after contact tip structure 102 is connected to elongated interconnection element 106, supporting (sacrifice) substrate 104 is removed. and the technology that is used to remove sacrificial substrate will be described below. and " belt end " interconnection element 106 that there is shown last formation is (as employed term here, " belt end " interconnection element is an interconnection element that contact tip structure of a separation has been connected on it), be connected with a contact tip structure 1012 on it with the described mode brazing of reference Figure 1B (108).

In this manner, contact tip structure 102 can have (more accurate) different with interconnection element 106 and allow spacing, can have the metallurgy different with interconnection element 106, and can have a kind of topological structure (will be described below), this topological structure is that method for distinguishing can't obtain for interconnection element 106.

The material that is used for contact tip structure (102) and sacrificial substrate (104), and be used for pre-preparation contact tip structure (102) and be used for after contact tip structure (102) is connected to interconnection element (106), removing the appropriate technology of sacrificial substrate, will be described in greater detail below.

A kind of exemplary integrated approach and last " belt end " interconnection element that forms

As described above, (on sacrificial substrate) prepares contact tip structure in advance, and subsequently contact tip structure is connected to the interconnection element that separates preparation with contact tip structure, brought many advantages.

Fig. 2 A-2D shows a kind of technology, be used for preparing in advance contact tip structure on sacrificial substrate, contact tip structure is connected to exemplary elongated interconnection element and removes sacrificial substrate, these figure are generally corresponding to Fig. 8 A-8E of above-mentioned PCT/US95/14844.

Fig. 2 A illustrates a kind of technology 200, be used on a sacrificial substrate 202, preparing contact tip structure. in this example, silicon substrate (wafer) 202 with top surface (as what seen among the figure) is as sacrificial substrate. and 204 deposits of one deck titanium film are (for example, by sputter) to the top surface of silicon substrate 202, and be fit to have about 250 (1

=0.1nm=10 ^-10M) thickness. layer of aluminum film 206 deposits (for example, by sputter) and are fit to have about 20000 on titanium film 204

Thickness.Titanium film 204 is elective and plays the effect of the tack coat of aluminium film 206.One deck copper film 208 deposits (for example, by sputter) and are fit to have about 5000 on aluminium film 206

Thickness.

One deck mask material 210 (for example photoresist) is deposited on the copper film 208, and thickness with about 2 mils (mil). mask layer 210 can be handled by any suitable method, thereby form a plurality of (showing wherein three) hole (opening) 212, these holes are passed photoresist layer 210 and are for example extended to following copper film 208., each hole 212 can have the diameter of 6 mils, and these holes 212 can be arranged according to the spacing (center-center) of 10 mils. in this case, sacrificial substrate 202 has been ready for a plurality of contact tip structures of preparation, contact tip structure preparation " defining by planography way " position on the sacrificial substrate 202 in hole 212. and exemplary contact tip structure can form in the following manner:

214 deposits of one deck nickel film (for example, pass through plating) in hole 212 on the copper film 208, and be fit to have the thickness of about 1.0-1.5 mil. before deposit nickel film, can be chosen in the thin noble metal film (not shown) of deposit one deck on the copper film 208, rhodium film for example. next step, one deck gold film 216 deposits (for example, passing through plating) are on nickel film 214. and the sandwich construction of nickel and gold (and selectable rhodium) will be as the contact tip structure (220, shown in Fig. 2 B) of pre-preparation.

Below, shown in Fig. 2 B, photoresist 210 is removed (adopting any suitable solvent), stay the end structure 220 of a plurality of pre-preparation, these end structures 220 are positioned on the copper film 208. then, the expose portion of copper film 208 (promptly not being touched the part that end structure 220 covers) stands a fast etching process to be handled, and exposes aluminium film 206 thus.Understanding as knowing, is useful in the aluminium step afterwards, because for most of soft solderings and hard solder material, aluminium is non-wettable (non-wettable) basically.

What be worth proposition is, be preferably in the same process step that is used for preparing actual contact tip structure 220, it is (not shown to make the photoresist composition form additional hole, with 212 similar), can prepare " temporary transient " contact tip structure 222. these temporary transient contact tip structures 222 in these additional holes will be used for making above-mentioned plating step (214 according to a kind of mode known and that understand, 216) homogenizing, this is to realize by the abrupt change gradient (unevenness) that reduces to show along the surface of wanting plating. this structure (222) is commonly called " flow restriction (robbers) " in the plating technical field.

In such a way, just successfully pre-preparation is on a sacrificial substrate 202 for a plurality of contact tip structures 220, and wait is connected to corresponding a plurality of interconnection element subsequently.As the part of pre-preparation contact tip structure technology (perhaps, be right after before contact tip structure is connected to the step of interconnection element), the top surface (as seeing among the figure) that can be chosen in end structure 220 is gone up deposit tin (soft) soldering paste or copper (firmly) soldering paste (" bond material ") 224.(not need on the top surface of temporary transient end structure 222 this soldering paste of deposit).This can realize in any suitable manner, for example adopts stainless steel cloth or openworking template or the automatic dispensing by soldering paste, just as known in the art.A kind of typical soldering paste (bond material) 224 comprises gold-ashbury metal (in a kind of paste matrix), and it is for example dome shape of 1 mil (spherical shape).

Contact tip structure 220 has been ready to be connected to the end (termination) of (for example, being brazed to) interconnection element now, and described interconnection element for example is the combined interconnecting component of (but being not limited to) above-mentioned female case (PCT/US95/14909).

In the time of on being produced and being positioned a sacrificial substrate (202), contact tip structure (220) itself constitutes a kind of product, and as below will describing in detail, can be connected to various existing interconnection elements subsequently.

The sacrificial substrate that has contact tip structure on it will be supported on the termination (free end) of exemplary elongated interconnection element 252 now, interconnection element 252 extends from an exemplary substrate 254, this substrate can be an electronic component. shown in Fig. 2 C, contact tip structure 220 is (for the purpose of demonstration is clear, two contact tip structures only are shown in the schematic diagram of Fig. 2 D) the inverse bonding technology that adopts standard is (for example, separation prism) aims at the termination (end) of interconnection element 252, and this assembly refluxes bond material 224 by a brazing stove (not shown), make the contact tip structure 220 of pre-preparation for good and all be connected to the end of (for example, being brazed to) interconnection element 232 thus.

In solder reflow process, the aluminium film (206) of non-wettable exposure prevents that scolder (being the pltine scolder) from from flowing between the contact tip structure 220, that is, preventing to form solder bridging between adjacent contact tip structure.

Except this anti-wetting function of aluminium film 206, aluminium film 206 also is used to provide a separating mechanism. adopt suitable etchant, aluminium preferentially (with respect to other material of this assembly) is etched, so silicon sacrificial substrate 202 is " the absolute separation " simply, obtain a substrate or an electronic component 254 at last with " belt end " interconnection element 252, each interconnection element 252 has the end structure 220 of a pre-preparation, shown in Fig. 2 D.(note: bond material 224 has refluxed in the end of interconnection element 252 and has formed " angle welding " 225).

In last step of this technology, remaining copper (208) is etched, (exposure is used for the terminal (not shown) that compression joint type reliably is electrically connected to the other electron component (not shown) for perhaps rhodium, contact tip structure 220 as previously discussed) to stay the nickel that band exposes.

Within the scope of the invention, can save brazing (soldering) cream (224), the substitute is, before being mounted to contact tip structure (220) on it, the plating eutectic replaces rete than the gold of (eutectic ratio) with tin on interconnection element (252). according to similar mode, with before interconnection element (252) is connected, can contact tip structure (220) go up plating meltable in conjunction with rete.

Because that a plurality of contact tip structures (220) are convenient to make coplane and make homogeneous thickness, therefore, " belt end " interconnection element (Fig. 2 D) that obtains at last will have the termination of coplane (that is the surface of the exposure of contact tip structure) in fact.

The electronic component (for example 254) that interconnection element (for example 252) is installed on it can be the element (for example space variable device (space transformer) element) and the like of ASIC (application-specific integrated circuit (ASIC)), microprocessor, probe card device.

Example

Within the scope of the invention, technology disclosed herein can be used for the contact tip structure of pre-preparation (for example is connected to, be brazed to) interconnection element and like, and described interconnection element or flexible or stiff, or longilineal or be not longilineal, or combined interconnecting component (such as disclosed among female case PCT/US95/14909) or monomer-type interconnection element.The interconnection element that contact tip structure connects can be mounted to (extending certainly) substrate, for example an electronic component is (such as the space variable device of (but being not limited to) probe card device, disclosed among for example above-mentioned PCT/US95/14844), perhaps can be a plurality of interconnection elements, these interconnection elements are not to be mounted to a substrate, but keep mutual predetermined spatial relationship by certain other means.

Fig. 3 A, 3B and 3C illustrate several exemplary application, and wherein the contact tip structure of pre-preparation of the present invention (for example 220) is connected to dissimilar " having " (independent preparation) interconnection element.In these figure, for show clear for the purpose of, saved brazing (demonstration of weld seam).

Example 1

Not that an example that is mounted to a plurality of elongated interconnection elements of a substrate by its end is IBM (tm) Cobra (tm) probe, illustrate as (imitation) among Fig. 3 A, this probe has a plurality of (showing wherein four) elongated interconnection element 302, these interconnection elements extend between the fixing planar structure 304 and 306 of two rigidity basically in parallel to each other, two opposed ends of each interconnection element 302 pass corresponding in the fixing planar structure of two rigidity, so that between a terminal (not shown) of a terminal (not shown) of an electronic component (not shown) and another electronic component (not shown), realize crimping. Fig. 3 A comes down to a principle schematic, rather than mechanical assembly drawing. elongated interconnection element 302 can be crooked, and plays the effect of crooked fine strain of millet generally.

The contact tip structure of pre-preparation, the end structure 220 shown in Fig. 2 B of front for example, can be easily connected to (brazing or plating mode for example by discussing above, not shown) an end (not shown) or the two ends (as shown in FIG.) of interconnection element 302, as as shown in Fig. 3 A, after this, sacrificial substrate (for example 202) is removed (not shown). for example, if end structure 220 only is connected to an end of interconnection element, they preferably are connected to a common ends (for example, the top of from then on seeing among the figure) of interconnection element.

This depicts significant advantage of the present invention. and metallurgy, size and the topological structure of contact tip structure (220) is irrelevant fully with the physical characteristic of the elongated interconnection element (302) that will be connected, and to be assembled to an incidental any process technology limit of use equipment irrelevant with a plurality of this interconnection elements.

The present invention has overcome and the relevant problem of Cobra type interconnection element, and Cobra type interconnection element needs meticulous termination shaping to realize its Expected Results.

Example 2

Fig. 3 B illustrates in a plurality of contact tip structures 220, these contact tip structures are connected to (brazing or the plating mode by discussing previously for example, not shown) end of an elongated tungsten pin 312, tungsten pin 312 is typical elements of existing probe card (not shown).

This depicts a significant advantage of the present invention with exemplary approach.Usually, it is difficult that the existing probe card tungsten pin of the termination shape with requirement is provided, especially the size along with these pins more and more littler (diameter that for example, has 1 mil).By the contact tip structure (220) of pre-preparation being connected to the end of tungsten pin (312), these problems can be avoided, made things convenient for thus more and more littler (for example, at diametrically) the use of tungsten pin, provide (at diametrically, perhaps " footprint ") than the big contact surface of tungsten pin (being the surface of contact tip structure) simultaneously.The present invention has also overcome the shape of the termination (end) of for example controlling the tungsten pin and the difficulty of exact position.

The present invention has overcome and the relevant various problems of tungsten pin probe member, comprises that grinding its termination makes it have the suitable shape and the difficult problem in life-span.

Under the situation of specific interconnection element, for contact tip structure is connected on it, may need to prepare the surface of interconnection element, for example by suitable shikishima plating process, make the surface of interconnection element be easy to accept brazing (or plating). for example, before being connected to contact tip structure (for example 220) on it, adopt the tungsten pin (for example 312) of plating probe card plug connectors such as gold, nickel, nickel-palladium.

Example 3

The interconnection element that contact tip structure will connect usually is elongated, and may be have intrinsic flexible, as described in two examples in front. still, within the scope of the invention, the contact tip structure interconnection element that will connect can be neither elongated neither having be intrinsic flexible.

Fig. 3 C shows the part of the lamina membranacea probe of known type of the prior art, wherein a plurality of (illustrating wherein two) inelastic boss interconnection element (contact boss) 322 is positioned on the surface of a flexible diaphragm 324. just as shown in FIG., contact tip structure of the present invention, for example end structure 220, be connected to (for example brazing or the plating by discussing previously is not shown) interconnection element 322.For the purpose of this argumentation, circular boss 322 is regarded as (from then on surrounding and watching and seeing it is its top edge) at its top to have " termination " or " end ".

The ability that contact tip structure (220) is connected to the interconnection element of this lamina membranacea probe allows to adopt diverse technology and metallurgy when preparation contact tip structure and boss contact head itself.

The present invention has overcome the relevant problem of hemisphere contact boss with this lamina membranacea probe that can not be reprocessed usually.

As what below will discuss in more detail, the present invention also allows to realize a kind of in fact unconfined required surface texture in the pressure contact surface of the interconnection element of belt end.

The metallurgy of contact tip structure

The various metallurgies (metal formulations) that are used for contact tip structure of the present invention are described in front. within the scope of the invention, can adopt the metallurgy of the last application of any " belt end " interconnection element that is suitable for forming.

Shown in Fig. 4 A, (for example preferred) contact tip structure that is used for a practicality of an interconnection element can be formed among the sacrificial substrate (or on) in the following manner, wherein adopts the thin aluminium (paper tinsel) of one deck as sacrificial substrate 400:

● for aluminium foil 400 provides an interim backing 402, plastic sheet for example is to strengthen the structural intergrity (this backing layer 402 can also play the effect of plating dividing plate/mask) of aluminium foil;

● adopt one deck thin (about 3 mils) photoresist film 404 or similar material that composition is carried out on the surface (being seen as top surface from figure) of aluminium foil 400, (or formation) opening is reserved in the position (with among Fig. 2 A 212 suitable) that forms contact tip structure in hope;

● in the opening of photoresist 404, (about 100 microinch (μ ") that deposit on aluminium foil 400 (for example passing through plating) one deck is thin) hard gold film 406;

● (about 5-10 μ ") copper film (" striking flash plate film (strike) ") 408 that deposit (for example passing through plating) one deck is very thin on hard gold film (be to be understood that; this copper (striking flash plate) film be some arbitrarily optionally, and be mainly used in the later plating of the golden film 406 of auxiliary hard formerly);

● (about 2 mils) nickel film 410 that deposit (for example passing through plating) one deck is thicker on copper (striking flash plate) film; And

● (about 100 μ ") soft golden film 412 that deposit on the nickel film (for example passing through plating) one deck is thin.

This has just finally formed the contact tip structure 420 (with 220 suitable) of a multilayer, and it can be easily connected to an end of an interconnection element (not shown).One of having as its main rete of contact tip structure 420 is used for the hard gold surface (406) of contact (for example being crimped to) electronic component (not shown), nickel film (410) and soft golden film (412) that is bonded to (can be connected to) interconnection element easily that provides intensity.

Be used to form the material (for example 214,216 of contact tip structure about deposit in the opening of the mask material on sacrificial substrate; 406,408,410,412), should be pointed out that thereon coating of sacrificial substrate itself (for example 400) or one or more deposit (for example 206,208) plays the effect that opening is electrically connected mutually, is convenient to adopt electroplating technology thus.

Separate sacrificial substrate

As previously described, one " simple " (being not have active device on it) silicon wafer can be used as sacrificial substrate, can prepare contact tip structure of the present invention thereon. a kind of exemplary metallurgy is described in front, wherein adopted a kind of suitable selective chemical etch process, contact tip structure has been separated with sacrificial substrate.

Within the scope of the invention, except chemical etchant,, can also adopt a kind of suitable metallurgy that combines with heat (processing) for separating sacrificial substrate. for example, shown in Fig. 4 B:

Step 1.The position (shown in the figure in a plurality of positions one) that has the topological structure of contact tip structure in hope is located, and 424 etchings of silicon (sacrifice) substrate are formed recess 422 (one or more, shown in the figure one).As what discuss below, the etching of silicon can be a self limiting.

Step 2.Coating forms the mask layer 426 (for example photoresist) of a composition on the surface of silicon (sacrifice) substrate 424.Opening 428 in the mask layer is located at the position that will prepare contact tip structure.

Step 3.In the opening 428 of mask layer 426, thin material of deposit on substrate (such as by sputter) (will know it is non-wettable material) layer 430, for example tungsten (perhaps titanium-tungsten) layer.

Step 4.In the opening 428 of mask layer 426, the thin layer 432 of a nonwetting material of deposit (such as by sputter) on thin tungsten layer, but the thin layer of the lead of plating (or indium) for example.

Step 5.According to foregoing mode (for example with reference to Fig. 4 A), in the opening of mask, preparation has the contact tip structure 440 (with 220,420 suitable) of one or more retes.

Step 6.According to foregoing mode, make contact tip structure 440 backflows (adopting heating) be soldered to the interconnection element (not shown).In solder reflow process, plumbous (material 432) will melt and glomeration, because tungsten (430) is non-wettable for plumbous (432). and this will cause contact tip structure 440 to separate with sacrificial substrate 424.

As elective scheme, can on layer 432, apply the non-wettable material of the second layer (for example tungsten).Described material will become the part of the contact tip structure of last formation, unless it is removed (for example by etching). in some cases, lead will be not can glomeration (for example, lead is easy to wetting nickel), may need to be provided with additional layer in this case, for example plumbous, be tungsten then, be plumbous again, to guarantee suitably separating of contact tip structure and sacrificial substrate.

As elective scheme, can go up the another kind of material of coating at the non-wettable material of the second layer (for example tungsten), said another kind of material (for example plumbous, indium) will be when being heated glomeration. lip-deep any remaining lead of the contact tip structure of Xing Chenging can easily be removed at last, perhaps can stay original position. in addition, can be between ground floor (for example rhodium) with the contact tip structure 1420 of glomerate second layer material and preparation, deposit one deck " stops " material.This " stopping " material can be tungsten, silicon nitride, molybdenum or similar material.

Termination topological structure (surface placement's structure)

In above main contents, discussed contact tip structure with a flat contact surface (for example 102,220,420).Use for many pressure contacts, the contact tip of a sphere or very little surface area is preferred, this contact tip presses the terminal of the nominal plane surface of an electronic component. and in other application, the surface of contact tip structure will preferably have the boss of pyramid, truncated pyramid, conical, wedge shape or analogous shape.

Fig. 5 A shows the first step of a kind of technology 500 that is used to form elongated contact tip structure, this contact tip structure has the contact structures of pyramid or truncated pyramid, it is formed on the sacrificial substrate 502, this substrate is a silicon wafer. one deck mask material 504, photoresist for example, be coated on the surface of silicon substrate 502, and be patterned into and have a plurality of (showing wherein two) opening 506, these openings extend to the surface of silicon substrate 502. and opening 506 preferably is square, the about 1-4 mil of size, for example the length of side is 2.5 mils.But opening can be rectangle or can have other geometry.

Next step, shown in Fig. 5 B, silicon substrate 502 is etched and form the recess 508 of a plurality of (showing one of them) pyramid of as much in silicon.This etching of silicon will have the tendency of self limiting, because being 54.74 ° the crystal face of edge (100) silicon, etching carries out. in other words, recess will extend certain degree of depth, and this degree of depth is that the characteristic by the size of opening (506) and silicon substrate (502) limits (decision).For example, square aperture for the length of side 2.5 mils, the degree of depth of recess will approximately be 2 mils. last, these recesses 508 will become that contact structures are integrally formed in will be on the final contact tip structure that forms on the silicon substrate. and this is a photoetching process preferably, so that the size of opening (506) and structure (recess) (508) and spacing will be very accurate, be accurate to tolerance and be micron (10 ^-6M) magnitude.

Next step, shown in Fig. 5 C, mask material 504 is removed, new mask layer 514 of coating on the surface of silicon substrate 502 (with 504 suitable), photoresist for example, and it is patterned into have a plurality of (showing one of them) opening 516 (with 506 suitable), these openings 516 extend to the surface of silicon substrate 502.Opening 516 ratio opens 506 are big, and aim at mutually.(each opening 516 is positioned at recess 508 tops).An exemplary opening 516 is rectangles, and suitable dimensions is about 7 mils (on the page orientation of diagrammatic sketch) * 8-30 mil (perpendicular to the page orientation of diagrammatic sketch).At last, these recessed openings 516 will be filled by electric conducting material, these electric conducting materials form will be on sacrificial substrate 502 matrix of the contact tip structure of pre-preparation.This preferably also is a photoetching process, but that the size of these openings 516 and spacing needn't resemble formerly the opening 506 is accurate, generally is acceptable up to the tolerance of 1 mil (0.001 inch) magnitude.

Subsequent, shown in Fig. 5 C, the contact tip structure 520 of a plurality of (showing one of them) multilayer is (with 220,420 is suitable) be formed in the opening 516, each has a pyramid-shaped structures 530. that extends from its surface in this example, and sandwich construction is to form by following suitable method:

● at first, just as has been describ, separating mechanism 522 of deposit (coating) (for example, a multilayer mechanism of lead/tungsten/lead composition);

● after this, rhodium or tungsten film 524 (perhaps ruthenium, iridium, hard nickel or cobalt or its alloy or tungsten carbide), for example 0.1-1.0 mil thick that deposit one deck is thin;

● then, the film 526 of the nickel that deposit one deck is thicker, cobalt or its alloy;

● last, the soft golden film 528 of being convenient to brazing that deposit one deck is thin.

In such a way, (formation) a plurality of elongated contact tip structures 520, each have pyramid contact structures 530. of protruding from its surface just the contact structures of this protrusion be used for carrying out actual contacting with a terminal (not shown) of an electronic component (not shown).

As Fig. 5 D, shown in 5E and the 5F, the contact structures 530 along the line 524 of pyramid are by suitably polishing (grinding), this will make the structure of pyramid become the structure of truncated pyramid. this less butt end shape (for example the length of side is the square of a few tenths of mil), rather than real most advanced and sophisticated head shapes, for the terminal (not shown) with the electronic component (not shown) forms reliable crimping, to be enough " sharp-pointed ", and be crimped to the process of a large amount of electronic components for (for example several thousand times) that repeat, such as what in the detection (for example silicon device wafer) of the interconnection element of belt end of the present invention is used, will experience, (this butt end shape) will be more wear-resisting than the shape of real point.

Another advantage of the tip of polishing contact structures 530 is, the second layer in the sandwich construction can come out, to contact with a terminal (not shown) of an electronic component (not shown). for example, this one deck can be the material with excellent electrical characteristics, for example rhodium.Perhaps, it can be the material with excellent antiwear characteristic, for example titanium-tungsten.

Fig. 5 E illustrates elongated contact tip structure 520 of the present invention, this contact tip structure is connected to an end of an elongated interconnection element 540 (with 302 suitable). and Fig. 5 F illustrates elongated contact tip structure 520 of the present invention, this contact tip structure is connected to a contact boss 322 (suitable with Fig. 3 C) of a lamina membranacea probe 324. and in these exemplary application, the contact tip structure 520 with topological contact structures 530 of protrusion provides:

● different metallurgies;

● the topological art of different contact (termination) (topological structure);

● the PT positional tolerance of strict control; With

● pitch extension to a certain degree (pitch spreading), if necessary.

About effective pitch extension, can find out from Fig. 5 F that contact tip structure can be arranged like this: the spacing between the contact structures 530 can be greater than (as shown in the figure) or less than the spacing of (not shown) contact ball 322.

Usually, in use, " belt end " interconnection element is mounted to first electronic component, and the tip of pyramid (seeing it is the top in Fig. 5 E and 5F) part is electrically connected with a terminal (not shown) of the second electronic component (not shown).

As mentioned above, contact tip structure by having topological contact structures (for example 530) on the pre-preparation one surface (for example 530), can realize high positional precision for the crimping that will form, and in the body portion of contact tip structure or the interconnection element that will connect, do not need similar precision. and with analogy procedure, golf course of (in your brains) imagination. a cup (hole) accurately is positioned on the greenery patches. and racer stands in (local arbitrarily) somewhere on the greenery patches. and this is accurately positioned and cup that have a split hair size (being a few tenths of inch) is similar to topological contact structures (for example 530). be similar to the body portion of contact tip structure (for example 520) around the greenery patches that cup extends to big range of tolerable variance (being several feet or several yards).The racer who stands in (promptly arbitrarily local) somewhere on the greenery patches is similar to the interconnection element that contact tip structure will connect (for example 540), (racer's pin is the termination of interconnection element).In other words, this topological contact structures provide high precision for the termination of the interconnection element of location that can be very rough. therefore, as can be seen, by making a plurality of roughly each of contact tip structures of location have contact structures, these contact structures are accurately located with respect to the topological contact structures on other contact tip structure in these a plurality of contact tip structures, can realize and accurately being located by connecting of terminals of electronic components.

A kind of termination topological structure of variation

Fig. 6 A and 6B show an embodiment of the contact tip structure that has topological contact structures. in this example, sacrificial substrate 602 has with the surface of mask layer 604. these sacrificial substrate of a plurality of (one of them is shown) opening 606 (in this example, sacrificial substrate is an aluminium) be used for the preparation of contact tip by " preparation ", this " preparation " be by firmly with the instrument of the tip surface of (from then on figure sees it is to stretch into page orientation) compressing substrate downwards, last one or more (comprising three or more) four (as shown in the figure) lacunas (recess) 608 preferably that in the surface of sacrificial substrate 602, form.

In the processing step of subsequently preparation contact tip structure (having described) as the front, these recesses 608 itself are one or more (showing four) " lacuna " contact structures 618 with " mirror image conversion ", these contact structures 618 from the contact tip structure 620 of last formation (with 102,220,420 is suitable) main part protrude. as known to, the chair of three legs is more reliable than the chair of four legs.Therefore, though as if having just in time, three projections (618) will be best, but in fact can be sure of, if have four projections of preferably arranging 618 by even interval (seeming four square angles), when contact tip structure 620 presses the terminal (not shown) of a corresponding plane surface of an electronic component (not shown), " waving (rock) " (promptly two along diagonal on the opposed structure 618) before and after contact tip structure 620 will be allowed to, thereby thrusting oxide skin(coating) and similar layer on the terminal, between " belt end " interconnection element and terminal, realize that reliable compression joint type is electrically connected thus. this is desirable for the realization crimping in specific application.

Another kind of termination metallurgy

The desirability and the multiple termination metallurgy of preparation multilayer end structure discussed in the front.

Within the scope of the invention, the termination metallurgy is as follows: since a silicon sacrificial substrate:

Step 1.At first deposit layer of aluminum film;

Step 2.Follow deposit one deck chromium film;

Step 3.Deposit one deck copper film then; With

Step 4.Last deposit one deck gold film.

The contact tip structure of Xing Chenging will have an aluminium contact surface (step 1) and a gold surface (step 4) at last, so that brazing (or similar fashion connection) is to an interconnection element. in order to realize the crimping with the LCD panel, preferably adopt the inserted connection of external means (for example spring clip), the aluminium contact surface is desirable, and the electronic component that said external means is used to keep to have interconnection element and above-mentioned end structure are connected with the LCD panel.

For ease of understanding the multilayer contact tip structure of this or any other embodiment described herein intuitively, can be with reference to Fig. 2 A and 4A.

Elongated contact tip structure

How sacrificial substrate described above can be used for:

(a) pre-preparation contact tip structure, attaching (connection) was to the termination (end) of elongated interconnection element (such as (but being not limited to) combined interconnecting component) and the interconnection element (such as the boss element of lamina membranacea probe) of other type after described contact tip structure was used for; With

(b) pre-preparation contact tip structure can directly prepare interconnection element on described contact tip structure, so that be mounted to terminals of electronic components as " belt end " interconnection element later on.

The effect how contact tip structure itself can play interconnection element will be described below, and do not need to be connected to other existing interconnection element. as to be described in detail below, these contact tip structure integral body that can play the effect of elastic contact element itself are elongated, and will still be called as " contact tip structure ".

Fig. 7 A-7F illustrates and a kind ofly is used to prepare contact tip structure and it is mounted to the technology 700 of terminals of electronic components, this contact tip structure is elongated, and will play the effect of cantilever (the cantilever type beam of plating) elastic contact element in use. this technology can be suitable for well the most at last that elastic contact element is mounted to such electronic component, for example the space variable device substrate and the like of semiconductor device, probe card device.

Fig. 7 A illustrates a sacrificial substrate 702, silicon wafer for example, etching forms a plurality of (showing one of them) groove 704. grooves 704 representative any surface textures ' moulding ' on one surface, and it is used for the contact tip structure that (formation) will prepare on sacrificial substrate 702. and (suitable) with foregoing topological contact structures. the layout of groove 704 (spacing and arrangement mode) can derive from the pad layout of a semiconductor chip (die) (not shown) and (duplicate; I.e. " mirror image conversion "), this semiconductor chip final (in use) will be touched (for example being detected).For example, groove 704 can be single layout towards the center of sacrificial substrate. such as, many memory chip preparations have row's center bonding pads.

Fig. 7 B illustrates: on the surface of sacrificial substrate 702, comprise in the groove 704, deposit a hard " draft (field) " layer (surface layer) 706.If this herbaceous layer be by the material that is unsuitable for plating for example tungsten silicide, tungsten or diamond constitute, can be chosen in deposit another (for example) on this herbaceous layer 706 but the material layer 708 of plating.(as will know understanding from following argumentation, if layer 706 is difficult to remove, it can be by selectively deposited (for example by a mask composition) coating, avoiding this removal).

In by the next step shown in Fig. 7 C, coating one deck mask material 710, photoresist for example, to define a plurality of openings of the cantilever end header structure that is used for preparing plating. the opening of mask layer 710 extends to groove 704 tops. then, can select thicker (for example 1-3 mil) elasticity (spring) alloy material (for example nickel and alloy thereof) 712 of deposit (for example passing through plating) one deck, be not easy at this elastic alloy under the situation of combination, soldering or brazing, deposit one deck is suitable for the material 714 of brazing or soldering on elastic alloy material layer 712.Elastic alloy material 712 can be by any suitable method deposit, for example plating, sputter or CVD (chemical vapor deposition).

Next step, shown in Fig. 7 D and 7E, along the part below the mask material 710 of being positioned at of layer (706 and 708), mask material 710 is stripped from (removal), the result is that a plurality of (showing one of them) elongated contact tip structure 720 has prepared on sacrificial substrate 702.Each elongated contact tip structure 720 has an inner end portion 722 (being sitting at corresponding groove 704 tops), an outer end portion 724 and a mid portion 726, and mid portion 726 is between inner end portion 722 and the outer end portion 724.

As what in Fig. 7 E, be clear that, cantilever end header structure 720 can be staggered (pressing L-R-L-R is orientated), so, aim at (corresponding to the row's center bonding pads on semiconductor device for example) although their inner end portion 722 all is a row, their outer end portion 724 is mutual inverted orientation.In such a way, the spacing between the outer end portion 724 of contact tip structure 720 is bigger than the spacing between the inner end portion 722.

Another feature of cantilever end header structure 720 of the present invention is, mid portion 726 can be taper, promptly as in Fig. 7 E, being clear that, from the narrowest on interior (contact) end parts 722 broaden gradually to outside the widest part on (pedestal) end parts 724. be mounted to a terminal of an electronic component rigidly when outer end portion 724, for example during the pad of the space variable device of probe card device or semiconductor device, this inner end portion 722 that is characterized as provides controlled predetermined offset.Usually, skew will be confined to or near interior (contact) end place of contact tip structure.

Fig. 7 F illustrates, cantilever end header structure 720 according to technology 700 preparation of Fig. 7 A-7E is mounted to rigidity " pillar " 730, pillar 730 extends (for example stand alone type is extended) from the respective terminal (showing a plurality of terminals) 732 of an electronic component 734. usually, the function of pillar 730 only is in the surface of element 734 contact tip structure 720 to be raised at the z direction of principal axis, so be contact jaw 722 slot millings, so that it carries out crimping hour offset (from then on seeing it is downward on the figure) at a terminal (not shown) with an electronic component (not shown).Within the scope of the invention, pillar (730) itself can be flexible, and in this case, according to the requirement of application-specific (use), elongated contact tip structure (720) can be flexible or can not be flexible also.

As shown in the figure, the elongated contact tip structure 720 of pre-preparation is mounted to the end (shown in the figure is the top) of pillar 730 by their outer (pedestal) end parts 724, and installation method can be any suitable method, for example brazing or soldering.Here, another advantage of the outer end portion of wide part as cantilever end header structure 720 is tangible, the big outer end portion of elongated contact tip structure provides bigger surface area for carrying out this soldering or brazing, this illustrates by welding line structure 736, and the possibility that outer (pedestal) end of elongated contact tip structure is fixedly attached to pillar is provided thus.

Within the scope of the invention, pillar 730 can be any freestanding interconnection element, include, but is not limited to combined interconnecting component, and particularly comprise the contact boss (in this case, electronic component 734 will be a probe lamina membranacea) of probe lamina membranacea and the tungsten pin of conventional probe card.

As what in Fig. 7 F, be clear that, the contact jaw part (722) of elongated contact tip structure (720) has the structure 740 of a projection, in use, the terminal (not shown) of the structure of this projection and electronic component (not shown) produces actual crimping. and the shape and size of this structure 740 are to be controlled by the shape and size of groove 704 (referring to Fig. 7 A).

In any cantilever beam structure, optimal way is, an end of cantilever is " fixing ", and the other end is " movably ".In such a way, moment of flexure is to calculate easily.Therefore, obviously, pillar (730) is rigidity as far as possible preferably.Be connected at elongated contact tip structure (720) under the situation of a contact boss on the lamina membranacea probe, big elasticity and/or biddability will itself be provided by lamina membranacea (734). in specific application, requiring pillar (730) is " combined interconnecting component " (with reference to aforementioned PCT/US95/14909), the overall offset that this will help the contact jaw of elongated contact tip structure to produce with crimping.

Realize pitch extension by contact tip structure

In the example in front (referring to Fig. 7 E), contact tip structure (720) layout is to have orientation (L-R-L-R) alternately, so their interior (contact) end is first spacing, and their outer (pedestal) end is second spacing, second spacing is greater than first spacing. and make its length by the preparation contact tip structure, can realize a kind of " pitch extension " effect with alternate.

Fig. 8 shows the another kind of technology 800 (this with can by the opposite or other mode of pitch extension of the space variable device realization that contact tip structure is installed) that realizes pitch extension by contact tip structure.

In this example 800, a plurality of (showing wherein five) elongated contact tip structure 820a...820e (is referred to as " 820 ", suitable with 720) be formed on the sacrificial substrate 802 (suitable) with 702. each contact tip structure 820 has (to contact) in one holds 822 (822a...822e) and outer (pedestal) end 824 (824a...824e). in this drawing as can be seen, inner 822 along a line aligning that is denoted as " R ", and contact tip structure 820 all is provided with (orientation is extended) and (sees it is to the right from this figure) on identical direction.

According to the present invention, elongated contact tip structure 820 has different length each other, and by for example length-weak point-length-weak point-rectangular formula arrangement of mode alternately, so their outer (pedestal) end 824a...824e has the big spacing of interior (contact) end 822a...822e than them.

In use, elongated contact tip structure 820 can easily be mounted to a terminals of electronic components by their pedestal end 824, and mounting means can be foregoing any suitable manner.

Another kind of elongated contact tip structure

How the front can adopt conventional semiconductor fabrication process (comprising microfabrication) if having been described, mask for example, etching and plating, the elongated cantilever type contact tip structure of preparation on sacrificial substrate (for example 720,820), and the elongated cantilever type contact tip structure that how can make final formation has " projection " structure (for example 740) of on-plane surface (protruding) from the plane. in other words, understand as knowing, the shape of the final elongated cantilever type contact tip structure that forms can be easily at whole three (x, y, z) controlled on the axis direction.

Fig. 9 A-9E illustrates other embodiment of elongated cantilever type contact tip structure, and these figure are corresponding to Figure 1A-1E of the U.S. Provisional Patent Application 60/034053 of accepting on December 31st, 1.

Fig. 9 A and 9B illustrate a kind of elongated contact tip structure (elastic contact element) 900, this element is suitable for being mounted to an electronic component as independent structures, and described electronic component comprises the space variable device among (but being not limited to) aforementioned PCT/US95/14844.

Structure 900 is elongated, and it has two ends 902 and 904, and the total longitudinal length between two ends is " L ".As an example, length " L " is in 10-1000 mil scope, for example 40-500 mil or 40-250 mil, be preferably the 60-100 mil. as what from following argumentation, can be expressly understood, in use, " effectively " length of this structure is " L1 ", and it is less than " L ", and this effective length is that structure 900 can be in response to the length of applied force bending.

End 902 is one " pedestals ", and contact element 900 will be mounted to an electronic component (not shown) herein.End 904 is " free end " (terminations), it will with another electronic component (for example a measured device is not shown) crimping.

The total height of structure 900 is " H ".For example, highly " H " in 4-40 mil scope, 5-12 mil preferably.(1 mil=0.001 inch)

As what be clear that from Fig. 9 A, structure 900 is " steps ".Base part 902 is on first height, and termination 904 is on another (second) height, and a centre (center) part 906 is on the 3rd height, and the 3rd height is between first and second height.Therefore, structure 900 has two " displacement (standoff) " highly, and they are denoted as " d1 " and " d2 " in the drawings.In other words, elastic contact element 900 has two " steps ", and a step is to make progress to center matrix part 906 from contact jaw 904, and another step is upwards to pedestal end 902 from center body portion 906.

In use, as between contact jaw 904 and the core 906 " vertical " (as from Fig. 9 A, seeing) distance displacement height " d1 " function as follows: when this structure when being offset with the terminal (not shown) crimping of an electronic component (not shown), the surface collision of anti-structure here and electronic component (not shown).

In use, as between pedestal end 902 and the core 906 " vertical " (as from Fig. 9 A, seeing) distance displacement height " d2 " function as follows: allow this beam (formula structure) crooked, and do not contact the surface of the substrate (comprising an electronic component) that these elongated contact structures will install by required overtravel.

As an example, displacement height " d1 " and " d2 " is of a size of:

● " d1 " is domestic at 3-15 mil model, preferably is about 7 ± 1 mils;

● " d2 " preferably is about 7 ± 1 mils in 0-15 mil scope.At " d2 " is under the situation of 0 mil, and this structure will be flat (step shown in not having) between core 906 and base part 902.

As what be clear that in Fig. 9 B, this structure 900 can be provided with different " integrated structure " 910 at its pedestal end 902 places.This integrated structure can be a tab or can select a binding post, and adopting this integrated structure is to be convenient in assembling process probe structure is brazed to a substrate (for example a space variable device or a semiconductor device).Perhaps, element that structure 900 will be installed or substrate can be provided with a binding post (pillar, with 730 suitable) or similar portions, and base part 902 is mounted to this binding post or similar portions.

In use, structure 900 will play the cantilever beam action, and preferably has at least one cone angle, and this angle is denoted as " α " in Fig. 9 B.For example, structure 900 is the 3-20 mil at the width " w1 " at its pedestal end 902 places, be preferably the 8-12 mil, and the width " w2 " of structure 900 at its termination end 904 places is the 1-10 mil, is preferably the 2-8 mil, and cone angle " α " is preferably the 2-6 degree.(taper) structure 900 narrows down from its pedestal 902 to its termination 904, allow when its pedestal 902 is fixed (can not move) and apply a power on its termination 904 the controlled bending of implementation structure 900 and uniform stress distribution (for concentrated) more.Adopt known photoetching technique, the width of this structure (being cone angle " α " therefore) is to control easily.

The termination end 904 of structure 900 preferably is provided with a topological structure 908, for example has the geometry of pyramid, with the crimping of auxiliary enforcement with a terminal of an electronic component (not shown).

Shown in Fig. 9 A and 9B, elastic contact element 900 is three-dimensional, and it extends at x, y and z direction of principal axis.Its length " L " is along the y axle, and its width (" w1 " and " w2 ") is along the x axle, and its thickness (" t1 " and " t2 ") and height (" H ") are along the z axle.When this elastic contact element 900 was mounted to an electronic component, it will so be installed, that is, the length of this elastic contact element and width are parallel to the surface of electronic component, and its height is perpendicular to the surface of electronic component.

Fig. 9 C illustrates a kind of resilient contact structure 950, and it is all identical with structure 900 among Fig. 9 A and the 9B aspect most of.This structure is elongated, has a pedestal end 952 (with 902 suitable) and contact jaw 954 (with 904 suitable) and one and is positioned at topological structure 958 on the contact jaw 954 (with 908 suitable).The main difference that demonstrates among Fig. 9 C is that structure 950 can have axial second cone angle of z " β ".

For example, as what be clear that in Fig. 9 C, structure 950 is the 1-10 mil at the thickness " t1 " at its pedestal end 952 places, be preferably the 2-5 mil, and the thickness " t2 " of structure 950 at its contact jaw 954 places is the 1-10 mil, is preferably the 1-5 mil, and cone angle " β " is preferably the 2-6 degree.

Angle " β " (Fig. 9 C) can adopt the various method formation that control thickness distributes that are used for. and for example, be to form, can in plating bath, add a suitable plating shielding by plating as fruit structure 950.As fruit structure 950 is not that plating forms, and can adopt suitable processes well known to control the spatial distribution of the thickness of structure of final formation.For example, the abrasion of sandblasting is handled or edm (EDM) to structure 950.

Therefore, can form so elongated contact structures, it has from its pedestal end (902,952) to its contact jaw (904,954) compound (two) tapering. it can have a cone angle " α ", this angle will be parallel to the substrate that these elongated contact structures will install or the x-y plane of element. and it can have a cone angle " β ", on behalf of this thickness of structure (z direction of principal axis), this angle narrow down. and two taperings are represented this structure (900,950) cross section is from its big pedestal end (902,950) diminish gradually to its little contact jaw (904,954).

Within the scope of the invention, structure can not be taper at Width, in this case, cone angle " α " will be 0. within the scope of the invention, cone angle " α " also can be greater than the 2-6 degree, for example greatly to 30 degree. within the scope of the invention, structure can not be taper at thickness direction, in this case, cone angle " β " will be 0. within the scope of the invention, and cone angle " β " also can be greater than the 2-6 degree, for example greatly to 30 degree. within the scope of the invention, structure can be taper at thickness direction only, and is not taper at Width; Be taper only perhaps, and be not taper at thickness direction at Width.

Contact structures 900 and 950 are metals fully mainly and preferably, and it can resemble and form (being prepared into) sandwich construction as described in the front.

Fig. 9 D is the enlarged diagram (this figure can be applicable to the contact jaw of other contact structures that show here with being equal to) of the contact jaw 954 of contact structures 950.In this enlarged diagram, can see, contact portion 954 is obvious projection in the end of elastic contact element (from then on seeing among the figure) surface from then on correspondingly, the distance of protruding " d3 " is the 0.25-5 mil, preferred 3 mils, and its suitable geometry is pyramid, wedge shape, hemisphere or analogous shape.

The total height of the elastic contact element of Xing Chenging " H " is the thickness sum of " d1 ", " d2 " (with " d3 ") and center matrix part at last.

An exemplary elastic contact element has so far been described, this contact element is suitable for realizing two connections between the electronic component, typical case is that its pedestal end is mounted to one of two electronic components, and another crimping in its contact jaw and two electronic components, this contact element have following size (unit is a mil, other have regulation except):

Size Scope Preferred value

L 10-1000 60-100

H 4-40 5-12

d1 3-15 7±1

d2 0-15 7±1

d3 0.25-5 3

w1 3-20 8-12

w2 1-10 2-8

t1 1-10 2-5

t2 1-10 1-5

α 0-30° 2-6°

β 0-30° 2-6°

Can clearly draw following total relation thus:

" L " is " H " 5 times approximately at least;

" d1 " is the sub-fraction of " H ", for example between the 1/5-1/2 of size " H ";

" w2 " approximately is half of size " w1 ", and is the sub-fraction of " H ", for example between the 1/10-1/2 of size " H ";

" t2 " approximately is half of size " t1 ".

Fig. 9 E illustrates the embodiment of a conversion of the present invention, wherein discrete contact tip structure 972 (with 220 suitable) can be connected to elongated contact tip structure 970 (with 900,950 is suitable) contact jaw 974, to replace the whole bossed contact structures (908 that form, 958) contact jaw. this provides contact tip structure 968 to have the possibility of the metallurgy different with elongated contact tip structure (elastic contact element) 970. for example, the suitable purpose of the metallurgy of elastic contact element 970 is that its mechanical property (for example elasticity) and its total ability are conductions, and the suitable purpose of metallurgy that is mounted to the contact tip structure 972 of contact element 970 is to realize that with a terminal (not shown) of an electronic component (not shown) that will contact good electrical connection and (if necessary) can have good antiwear characteristic.

Material and technology

The suitable material that is used for one or more retes of contact tip structure described herein includes, but is not limited to:

Nickel with and alloy;

Copper, cobalt, iron and their alloy;

Gold (especially hard gold) and silver, they all present excellent current capacity and excellent contact resistance characteristic;

Platinum family element;

Noble metal;

Half expensive (semi-noble) metal and their alloy, especially palladium family element and their alloy; With

Tungsten, molybdenum and other refractory metal and their alloy.

Under the situation that the mode that need connect with soft soldering finishes preparation technology, also can adopt tin, lead, bismuth, indium and their alloy.

The appropriate process that is used for these materials of deposit (for example being deposited to the opening of a mask layer of a sacrificial substrate) includes, but is not limited to: the various technologies that comprise deposition materials from the aqueous solution; The electrolysis plating; Electroless plating; Chemical vapor deposition (CVD); Physical vapor deposition (PVD); The disintegrate of inducing by the liquid or solid parent causes the technology of deposition of materials; And similar technology, all these technology that are used for deposition materials are known generally speaking. plating is the preferred technology of a kind of routine.

Revise (homogenizing) " K "

(all other parameters for example material are identical with the cross section) a plurality of elongated contact tip structures with different length will present different resistant property to the contact force that applies at its freedom (contact) end. and usually, the elastic constant " K " that hope is mounted to all elongated contact tip structures of a given electronic component is consistent.

Figure 10 A-10D illustrates and is mounted to electronic component (1010 respectively, 1030,1050,1070) elongated contact tip structure (1000,1020,1040,1060) and the resistant property " K " that is used for a plurality of inconsistent elongated contact tip structures be modified to consistent technology, these figure are corresponding to Fig. 7 A-7D of the U.S. Provisional Patent Application 60/034053 of accepting on December 31st, 1.

Elongated contact tip structure (1000,1020,1040,1060) be similar to previously described arbitrary elongated contact tip structure, and have a pedestal end (1002,1022,1042,1062) and an end portion (1004,1024,1044,1064), pedestal end and end portion are respectively in the opposite direction from a center matrix part (1006,1026,1046,1066) skew. respective elongated contact tip structure 900 and 950 is suitable among they and Fig. 9 A and the 9C.

Figure 10 A illustrates the first kind of technology that is used to revise elastic constant.In this example, an elastic contact element 1000 (suitable with previously described arbitrary elongated contact tip structure) is mounted to a terminal of an electronic component 1010 by its pedestal end 1002.A groove 1012 is formed in the surface of electronic component 1010, and below the contact jaw 1004 of resilient contact structure 1000, along body portion 1006, pedestal end 1002 towards elastic contact element 1000 extends to a position (point) " P ", this position (point) " P " is located at the fixed range place that is scheduled to apart from contact jaw 1004,60 mils for example. when a power is applied to contact jaw 1004 downwards, elastic contact element 1000 is with bending (skew), locate the edge (being the surface of element 1010) of contact trench 1012 at point " P " up to body portion 1006, at this moment, have only the outermost portion (from point " P " to the end 804) of elastic contact element 1000 to allow further to be offset. the outermost portion of elastic contact element has the control length " L1 " of one ' effectively ', for any amount of elastic contact element (1000), as long as they have the total length " L " greater than " L1 ", just can easily form same case (effective length).In such a way, between the elastic contact element of all lengths (main points " P " fall into the somewhere in the center matrix part of elastic contact element), can be so that to reaction (" the K ") unanimity of the contact force that applies.

Figure 10 B illustrates the another kind of technology that is used to revise elastic constant.In this example, elastic contact element 1020 is mounted to an electronic component 1030 (with 1010 suitable) by its pedestal end 1022.Structure 1032 (with 1012 suitable) is formed on the surface of electronic component 1030, its position is in the pedestal end 1022 of elastic contact element 1020, between the center matrix part 1026 of the surface of electronic component 1030 and elastic contact element 1020 (and 1006 suitable), and along body portion 1026 (with 1006 suitable), extend to a position (point) " P " towards the contact jaw 1024 of elastic contact element 1020 (with 1004 suitable), this position (point) " P " is located at the fixed range place that is scheduled to apart from contact jaw 1024, for example aforesaid preset distance (with reference to Figure 10 A). structure 1032 is suitably for the pearl of any hard material, for example glass or the ceramic ring cut in advance, it is set on the surface of electronic component 1030.When a power is applied to contact jaw 1024 downwards, have only the outermost portion (from point " P " to end 1024) of elastic contact element 1020 to allow skew. as embodiment (1000) in front, in such a way, can make in the elastic contact element of all lengths reaction unanimity to the contact force that applies.

Figure 10 C illustrates another technology that is used to revise elastic constant. and in this example, an elastic contact element 1040 (suitable with 1020 to 1000) is mounted to 1050. encapsulating structures 1052 of an electronic component by its pedestal end 1042 and is formed on the surface of electronic component 1050 in the mode similar to the structure 1032 of the embodiment of front.But, in this case, structure 1052 is sealed the pedestal end 1042 of resilient contact structure 1040 fully, and along body portion 1046, extend to a position (point) " P " towards contact jaw 1044, this position (point) " P " is located at the fixed range place that is scheduled to apart from contact jaw 1044, the preset distance of for example aforementioned (with reference to Figure 10 B).The outermost portion of elastic contact element 1040 has the length " L1 " of one ' effectively '.In the embodiment of front, when a power is applied to contact jaw 1044 downwards, have only the outermost portion (from point " P " to the end 1044) of elastic contact element 1044 to allow skew.In the embodiment of front, can make in the elastic contact element of all lengths reaction unanimity to the contact force that applies.

Figure 10 D illustrates another technology that is used to revise elastic constant.In this example, an elastic contact element 1060 (with 1000,1020,1040 is suitable) is mounted to an electronic component 1080 (with 1050 suitable) by its pedestal end 1062.In this example, body portion 1066 locates to be formed with " bending part " 1072 at a position (point) " P ", and this position (point) " P " is located at the fixed range place that is scheduled to apart from contact jaw 1064, the preset distance of for example aforementioned (with reference to Fig. 8 C).Therefore the outermost portion of elastic contact element 1060 has the length " L1 " of one ' effectively '.In embodiment in front, when a power is applied to contact jaw 1064 downwards, have only the outermost portion (from point " P " to the end 1064) of elastic contact element 1060 to allow skew.(can select the size and dimension of bending part 1072 like this: before the surface of bending part 1072 contact elements 1070, whole contact structures 1060 are offset a little, and after this, 1060 the outermost portion of only having elastic component will continue skew.) in the embodiment of front, can make in the elastic contact element of all lengths reaction unanimity to the contact force that applies.

Within the scope of the invention, for making elastic constant unanimity in the have different total lengths contact element of (" L "), can adopt other technology. for example,, can make their width and/or cone angle " α " different mutually for realizing this desired result.

Three-dimensional elongated contact tip structure

Multiple elongated contact tip structure has been described in the front, these structures are suitable for directly being mounted to or being formed on the terminals of electronic components, and can extend from electronic component " three-dimensional ", so as its contact jaw be positioned can with another terminals of electronic components crimping.

Figure 11 A and 11B illustrate another embodiment of elongated contact tip structure, and this structure is suitable for itself playing the effect of elastic contact element. and Fig. 8 A and the 8B of the U.S. Provisional Patent Application 60/034053 that Figure 11 A and 11B and on December 31st, 1 accept are suitable.

Figure 11 A illustrates a kind of elastic contact element 1100, it is prepared from according to previously described technology, difference wherein (significant difference) is, the center matrix part 1106 of contact element (with 906 suitable) is not straight, though it still can be in (for example x-y plane) in the plane, as shown in the figure, it is along x direction of principal axis " dislocation " crosscut simultaneously y axle, in this case, pedestal end 1012 (suitable with 902) will have with contact jaw 1104 (with 904 suitable) or be arranged on the different x coordinate of contact structures 1108 on the contact jaw 1104 (with 908 suitable).

Figure 11 B illustrates another kind of elastic contact element 1150, it in many aspects to Figure 11 A in elastic contact element 1100 be similar, its difference is, the step between core 1156 and contact jaw part 1154 (and 1104 suitable), between center matrix part 1156 (and 1106 suitable) and base part 1152 (and 1102 suitable), also has the axial step of z.Shown elastic contact element 1150 is provided with contact structures 1158 (with 1108 suitable) on its contact jaw 1154.

Though in the explanation of accompanying drawing and front, the present invention has been done detailed displaying and description; but it is illustrative rather than restrictive that these figure and explanation should be considered to be; should be understood to; only be preferred embodiment have been done to show and describe that hope is protected and enter all conversion in the spiritual scope of the present invention and revise also.Undoubtedly, for the those of ordinary skill of the maximally related technical field of the present invention, will produce many other " variations " on above-mentioned " theme " basis, this variation also belongs within the scope of the present invention disclosed herein.

For example, final elongated contact tip structure and the elastic contact element that forms can be by heat treatment, to strengthen their mechanical property, this heat treatment can be carried out when they are on the sacrificial substrate, also can carry out after they are mounted to another substrate or an electronic component.In addition, follow contact tip structure to be connected to interconnection element or elastic contact element is mounted to any heat that (for example being brazed to) element produces and can be utilized valuably, with the material of " heat treatment " interconnection element or the material of elastic contact element respectively.

Claims (15)

1. electric contact structure comprises:

A plurality of interconnection elements, they are to be provided with mutually with first spacing;

A plurality of contact tip structures, they are fixed to corresponding interconnection element by bound fraction, and these contact tip structures are to be provided with mutually with second spacing, and second gap ratio, first spacing is more tight,

Wherein, be fixed to corresponding interconnection element and with before sacrificial substrate is separated, described a plurality of contact tip structures are forming on the sacrificial substrate and are being on the precalculated position of sacrificial substrate at a plurality of contact tip structures.

2. according to the electric contact structure of claim 1, wherein: each contact tip structure comprises body portion and have a topological contact structures part on its body portion.

3. according to the electric contact structure of claim 2, wherein: these topology contact structures partly are pyramid.

4. according to the electric contact structure of claim 2, wherein: these topology contact structures partly are truncated pyramid.

5. according to the electric contact structure of claim 2, wherein: these topology contact structures partly are one or more lacuna shapes.

6. according to the electric contact structure of claim 1, wherein: this bound fraction is the brazing bound fraction.

7. according to the electric contact structure of claim 1, wherein: this bound fraction is the plating bound fraction.

8. according to the electric contact structure of claim 1, wherein: this bound fraction is a conductive adhesive.

9. contact tip structure is suitable for being connected to the end of elongated interconnection element, and it comprises:

A plurality of contact tip structures, they are prepared on the sacrificial substrate and are in precalculated position on this sacrificial substrate;

Wherein, in use, after this contact tip structure was connected to corresponding a plurality of elongated interconnection elements that are pre-existing in, sacrificial substrate was separated with this contact tip structure.

10. cantilever type end structure is suitable for being connected to the termination of pillar, and it comprises:

A plurality of cantilever type end structures with the raised structures that partly extends from inner termination, wherein said a plurality of cantilever type end structures are forming on the precalculated position of a sacrificial substrate and are residing on this sacrificial substrate,

Wherein, in use, after its external end head part part was bonded to the end that is pre-existing in pillar, this sacrificial substrate was separated with the cantilever type end structure at the cantilever type end structure.

11. according to the cantilever type end structure of claim 10, wherein:

This cantilever type end structure is a multi-layer metal structure,

This sacrificial substrate comprises a kind of material of selecting from the material group of being made of aluminium, copper and silicon.

12. according to the cantilever type end structure of claim 11, wherein: this sacrificial substrate is a silicon wafer.

13. according to the cantilever type end structure of claim 11, wherein: this sacrificial substrate is an aluminium.

14. according to the cantilever type end structure of claim 10, wherein: this cantilever type end structure is one or more layers material of selecting from the material group of being made up of following material:

Nickel with and alloy;

Copper, cobalt, iron and their alloy;

Golden and silver-colored;

Platinum family element;

Noble metal;

Semi-precious metal and their alloy, especially palladium family element and their alloy;

Tungsten, molybdenum and other refractory metal and their alloy; With

Tin, lead, bismuth, indium and their alloy.

15. according to the cantilever type end structure of claim 10, wherein:

Each raised structures has a topological structure on one surface; And

This surface with topological structure is the surface of carrying out crimping in use with terminals of electronic components.

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