CN100453444C - Method for preparing nano-imprinting template by utilizing multilayer side wall technology - Google Patents
Method for preparing nano-imprinting template by utilizing multilayer side wall technology Download PDFInfo
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- CN100453444C CN100453444C CNB200510126492XA CN200510126492A CN100453444C CN 100453444 C CN100453444 C CN 100453444C CN B200510126492X A CNB200510126492X A CN B200510126492XA CN 200510126492 A CN200510126492 A CN 200510126492A CN 100453444 C CN100453444 C CN 100453444C
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- side wall
- nano impression
- impression formboard
- wall technology
- utilizing multilayer
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- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000005516 engineering process Methods 0.000 title claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000005498 polishing Methods 0.000 claims abstract description 4
- 239000000126 substance Substances 0.000 claims abstract description 3
- 239000012528 membrane Substances 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 238000000231 atomic layer deposition Methods 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 6
- 238000000227 grinding Methods 0.000 abstract description 2
- 230000008021 deposition Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000012615 high-resolution technique Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a method for preparing a nano-imprinting template by utilizing a multilayer side wall technology, which comprises the following process steps: 1. depositing a structural film on a light-transmitting substrate; 2. depositing another material as a second layer structure film; 3. repeating the steps 1 and 2 according to the line design requirement; 4. polishing the surface of the substrate by adopting methods such as chemical mechanical planarization or grinding and the like to obtain a side wall array consisting of first structural materials and second structural materials alternately; 5. and selectively corroding or etching the side walls of the two structural materials to form the nano-imprinting template.
Description
Technical field
The invention belongs to the micro-nano manufacture field in microelectronics and the nanoelectronics, particularly a kind of preparation of nano impression formboard can be applicable to comprise nanometer forming techniques such as hot padding and ultra-violet curing impression.
Background technology
Nano impression is the nanofabrication technique that rises a kind of this year, compares with traditional optical lithography, has characteristics such as resolution pole height, and compares with high resolution technique such as beamwriter lithographies, then has the efficient height, cost is low, is suitable for advantages such as batch process.The masterplate preparation is a very important link in the nanometer embossing, because the resolution ratio of impression at first depends on the resolution ratio of masterplate.Usually nano impression formboard adopts e-book photoetching and lithographic technique to obtain, and cost is very high.The side wall technology has high resolution ratio, need not photoetching and just can obtain very little characteristic size.At present, the side wall technology does not still have report in the nano impression formboard Applications in Fabrication, does not have relevant patent yet.For example, application number is 03122450.4 patent utilization oxidation polysilicon compressive features size and the lines interval that obtains inferior photoetching with selective etching; Application number is the method that 03148751.3 patent has then been invented a kind of nano impression formboard that hardens; Application number is that 03133077.0 patent then is a kind of little casting nanometer silicon carbide impression formboard.
Summary of the invention
The purpose of this invention is to provide a kind of method of utilizing multilayer side wall technology to prepare nano impression formboard, be particularly suitable for the imprint nano cycle graph, for example optical element such as grating, zone plate.
Step of the present invention is as follows: 1, deposit ground floor structural membrane on graphical substrate; 2, another material of deposit is as second layer structural membrane; 3, according to lines designing requirement repeating step 1 and 2; 4, adopt chemical-mechanical planarization or Ginding process polishing substrate surface, obtain the side wall array of alternately forming with second kind of structural material by first kind; 5, the side wall of selective etching or two kinds of structural materials of etching forms nano impression formboard.
The described method of utilizing multilayer side wall technology to prepare nano impression formboard, wherein said double-layer structure material adopt chemical vapor deposition, evaporation, sputter, molecular beam epitaxy, atomic layer deposition method to obtain.
The described method of utilizing multilayer side wall technology to prepare nano impression formboard, the alternately number of wherein said double-layer structure material and material thickness are by design live width and spacing decision.
The described method of utilizing multilayer side wall technology to prepare nano impression formboard, wherein said selective etching adopts the method for chemical attack, to form the lines and interval in the nano impression formboard.
The preparation method of wherein said nano impression formboard is by several deposit, a planarization and a selective etching, obtains nano impression formboard.
Description of drawings
In order to illustrate further content of the present invention, below in conjunction with drawings and Examples, the present invention is done detailed description, wherein:
Fig. 1-1 is to Fig. 1-the 5th, flow chart of the present invention;
Fig. 2-1 is to Fig. 2-the 5th, the flow chart of the invention process example.
The specific embodiment
1, as Figure 1-1, deposit ground floor structural membrane 102 on graphical substrate 101, ground floor structural membrane 102 are method acquisitions such as employing chemical vapor deposition.
2, shown in Fig. 1-2, deposit second layer structural membrane 103 on ground floor structural membrane 102, second layer structural membrane 103 are method acquisitions such as employing chemical vapor deposition.
3, as Figure 1-3, according to the design alternating deposition double-layer structure film of masterplate live width spacing;
4, shown in Fig. 1-4, the planarization substrate causes surface 104, makes 102,103 side walls form periodic arrangement, and methods such as chemical-mechanical planarization or grinding are adopted in described planarization.
5, shown in Fig. 1-5, selective etching 102,103 side walls form alternately shape lines 105, and groove 106 is finished nano impression formboard and made.
The examples of implementation flow process.
1, shown in Fig. 2-1, silicon oxide deposition film 202 on graphical substrate 201, silicon oxide film 202 are method acquisitions such as employing chemical vapor deposition.
2, shown in Fig. 2-2, deposition silicon nitride film 203 on silicon oxide film 202, and silicon nitride film 203 is method acquisitions such as employing chemical vapor deposition.
3, shown in Fig. 2-3, according to the design alternating deposition double-layer structure film of masterplate live width spacing;
4, shown in Fig. 2-4, adopt the chemical-mechanical planarization polishing substrate to cause surface 204, make 202,203 side walls form periodic arrangement.
5, shown in Fig. 2-5, adopt hydrofluoric acid selective etching 202,203 side walls, form alternately shape lines 205, groove 206 is finished nano impression formboard and is made.
Claims (4)
1, a kind of method of utilizing multilayer side wall technology to prepare nano impression formboard is by several deposit, a planarization and a selective etching, obtains nano impression formboard; It is characterized in that its step is as follows:
Step 1, on graphical substrate deposit ground floor structural membrane;
Step 2, another material of deposit are as second layer structural membrane;
Step 3, according to lines designing requirement repeating step 1 and 2;
Step 4, employing chemical-mechanical planarization or Ginding process polishing substrate surface obtain the side wall array of alternately forming with second kind of structural material by first kind;
The side wall of step 5, selective etching or two kinds of structural materials of etching forms nano impression formboard.
2, the method for utilizing multilayer side wall technology to prepare nano impression formboard according to claim 1 is characterized in that, wherein said double-layer structure material adopts chemical vapor deposition, evaporation, sputter, molecular beam epitaxy or atomic layer deposition method to obtain.
3, the method for utilizing multilayer side wall technology to prepare nano impression formboard according to claim 1 is characterized in that, the alternately number of wherein said double-layer structure material and material thickness are by design live width and spacing decision.
4, the method for utilizing multilayer side wall technology to prepare nano impression formboard according to claim 1 is characterized in that, wherein said selective etching adopts the method for chemical attack, to form the lines and interval in the nano impression formboard.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200510126492XA CN100453444C (en) | 2005-12-14 | 2005-12-14 | Method for preparing nano-imprinting template by utilizing multilayer side wall technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200510126492XA CN100453444C (en) | 2005-12-14 | 2005-12-14 | Method for preparing nano-imprinting template by utilizing multilayer side wall technology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1982202A CN1982202A (en) | 2007-06-20 |
| CN100453444C true CN100453444C (en) | 2009-01-21 |
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| CNB200510126492XA Active CN100453444C (en) | 2005-12-14 | 2005-12-14 | Method for preparing nano-imprinting template by utilizing multilayer side wall technology |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101508419B (en) * | 2009-03-24 | 2011-01-12 | 北京大学 | Processing method for nano-pole forest |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1118936A (en) * | 1994-07-14 | 1996-03-20 | 现代电子产业株式会社 | Method for forming submicroscopic patterns |
| US20030127429A1 (en) * | 2001-12-17 | 2003-07-10 | Masaru Ohgaki | Method for forming fine grooves and stamper and structure with fine grooves |
| CN1453638A (en) * | 2002-04-23 | 2003-11-05 | 惠普公司 | Method for producing sub-photoetching dimensional line and space pattern of pressing & printing nano-photoetching |
| US20040081798A1 (en) * | 2002-10-24 | 2004-04-29 | Heon Lee | Hardened nano-imprinting stamp |
| CN1529349A (en) * | 2003-09-26 | 2004-09-15 | 中国科学院上海微系统与信息技术研究 | Method for maunufacturing nano transistor device with source-drain on autoregistered insulator |
| CN1529342A (en) * | 2003-09-26 | 2004-09-15 | 中国科学院上海微系统与信息技术研究 | Method for preparing oxygen-embedding with nano silicon channel using side-wall technique |
| US20050170292A1 (en) * | 2004-02-04 | 2005-08-04 | Industrial Technology Research Institute | Structure of imprint mold and method for fabricating the same |
-
2005
- 2005-12-14 CN CNB200510126492XA patent/CN100453444C/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1118936A (en) * | 1994-07-14 | 1996-03-20 | 现代电子产业株式会社 | Method for forming submicroscopic patterns |
| US20030127429A1 (en) * | 2001-12-17 | 2003-07-10 | Masaru Ohgaki | Method for forming fine grooves and stamper and structure with fine grooves |
| CN1453638A (en) * | 2002-04-23 | 2003-11-05 | 惠普公司 | Method for producing sub-photoetching dimensional line and space pattern of pressing & printing nano-photoetching |
| US20040081798A1 (en) * | 2002-10-24 | 2004-04-29 | Heon Lee | Hardened nano-imprinting stamp |
| CN1529349A (en) * | 2003-09-26 | 2004-09-15 | 中国科学院上海微系统与信息技术研究 | Method for maunufacturing nano transistor device with source-drain on autoregistered insulator |
| CN1529342A (en) * | 2003-09-26 | 2004-09-15 | 中国科学院上海微系统与信息技术研究 | Method for preparing oxygen-embedding with nano silicon channel using side-wall technique |
| US20050170292A1 (en) * | 2004-02-04 | 2005-08-04 | Industrial Technology Research Institute | Structure of imprint mold and method for fabricating the same |
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| CN1982202A (en) | 2007-06-20 |
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Owner name: INST OF MICROELECTRONICS, C. A. S Effective date: 20130411 Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHA Free format text: FORMER OWNER: INST OF MICROELECTRONICS, C. A. S Effective date: 20130411 |
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Effective date of registration: 20130411 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) Corp. Patentee after: Institute of Microelectronics of the Chinese Academy of Sciences Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |