CN100439910C - High-polymer resistance type thin film humidity-sensitive element with high water-proofing performance and producing method thereof - Google Patents
High-polymer resistance type thin film humidity-sensitive element with high water-proofing performance and producing method thereof Download PDFInfo
- Publication number
- CN100439910C CN100439910C CNB2006100536917A CN200610053691A CN100439910C CN 100439910 C CN100439910 C CN 100439910C CN B2006100536917 A CNB2006100536917 A CN B2006100536917A CN 200610053691 A CN200610053691 A CN 200610053691A CN 100439910 C CN100439910 C CN 100439910C
- Authority
- CN
- China
- Prior art keywords
- humidity
- interdigital
- wet
- sensitive element
- sensitive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 title abstract description 12
- 238000004078 waterproofing Methods 0.000 title description 9
- 229920000642 polymer Polymers 0.000 title description 4
- 239000011521 glass Substances 0.000 claims abstract description 30
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000010931 gold Substances 0.000 claims abstract description 27
- 229910052737 gold Inorganic materials 0.000 claims abstract description 27
- 239000010408 film Substances 0.000 claims abstract description 25
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 claims abstract description 9
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 claims abstract description 8
- 125000002091 cationic group Chemical group 0.000 claims description 15
- 239000011159 matrix material Substances 0.000 claims description 15
- -1 gamma-aminopropyl-triethoxy-silane quaternary ammonium salt Chemical class 0.000 claims description 13
- 229920000867 polyelectrolyte Polymers 0.000 claims description 12
- 230000031709 bromination Effects 0.000 claims description 7
- 238000005893 bromination reaction Methods 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 5
- 238000004132 cross linking Methods 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000006460 hydrolysis reaction Methods 0.000 claims description 3
- 239000000178 monomer Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 6
- 230000032683 aging Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract 2
- 229910052651 microcline Inorganic materials 0.000 abstract 2
- 239000001273 butane Substances 0.000 abstract 1
- 239000003792 electrolyte Substances 0.000 abstract 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 abstract 1
- 239000002994 raw material Substances 0.000 abstract 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 17
- 238000006243 chemical reaction Methods 0.000 description 12
- 238000002360 preparation method Methods 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- 235000019441 ethanol Nutrition 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000004062 sedimentation Methods 0.000 description 4
- 238000007669 thermal treatment Methods 0.000 description 4
- 238000001291 vacuum drying Methods 0.000 description 4
- 238000010792 warming Methods 0.000 description 4
- 238000003618 dip coating Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical group 0.000 description 2
- 238000007791 dehumidification Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000001953 sensory effect Effects 0.000 description 2
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 2
- 229920005573 silicon-containing polymer Polymers 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 125000005373 siloxane group Chemical group [SiH2](O*)* 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Landscapes
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The invention discloses a kind of high bear the high mark sub-electric resistance of water characteristic a type a quick component with wet thin film and it creation method. It is made up of the gamma-aminopropyl triethoxysilane and the bromnormal butane which the mole ratio is 1: 0.5~2. The characteristic of that wet quick component is to coat the wet film on the microcline glass surface with the 8~16 pairs of the gold interdigital electrode. The feeling wet film was turned by the quarter to hand over with water solution and the heating for two kinds of above raw materials allied from gather to contain captions electrolyte formatively from gather a thing. The making method of that wet quick component is the method that the adoption handles after immersing craft and the heating, making first have feeling the microcline glass fork of the wet film to point gold electrode, then carry on aging processing system. The invention makes a method in brief; the cost is low, being applicable to batch quantity production particularly. The wet quick component made has the breadth degree of humidity quantity distance, the intelligent degree is high, responding to line a degree good, is high to bear water characteristic particularly, can be applied in accurate diagraph and control of process and environment degree of humidity extensively.
Description
Technical field
The present invention relates to polymer resistance type thin film humidity-sensitive element with high of a kind of high water-proofing performance and preparation method thereof.
Background technology
The developing into us and opened up a wide sensor space of the progress of society and technology, humidity sensor is the important chemical sensor of a class.High molecule humidity sensor is to use the wider novel humidity sensor of a class at present, mainly contains capacitor type and resistor-type two big classes.It has a wide range of applications at aspects such as storage, commercial production, process control, environmental monitoring, household electrical appliance, meteorologies.Wherein, macromolecule resistance type humidity sensor, more with its good response characteristic, the hygrometric wide ranges is made simply, is easy to integratedly, and miniaturization is produced in batches, and lower-price characteristic becomes the trend of research and development.But it still exists long-time stability and the dissatisfactory problem of reliability, hinders and has restricted its practical application and further develop.This mainly is that its water tolerance is poor usually because of the resistor-type humidity-sensitive material, and humidity-sensitive film and electrode base materials cohesiveness are bad simultaneously, the event of expanding easily in high humidity environment and come off.
Summary of the invention
The purpose of this invention is to provide polymer resistance type thin film humidity-sensitive element with high of a kind of high water-proofing performance and preparation method thereof.
High water-fast siliceous cationic polyelectrolyte autopolymer resistance type thin film humidity-sensitive element has the devitrified glass sheet matrix, evaporation, photoetching have many to interdigital gold electrode on the microcrystalline glass matrix surface, on interdigital gold electrode, be connected with lead-in wire, be coated with humidity-sensitive film on devitrified glass sheet matrix and interdigital gold electrode surfaces, humidity-sensitive film is siliceous cationic polyelectrolyte autopolymer.It through quaternary ammoniated and hydrolysis reaction, forms cationic monomer gamma-aminopropyl-triethoxy-silane quaternary ammonium salt by gamma-aminopropyl-triethoxy-silane and bromination of n-butane, forms through the heat cross-linking autohemagglutination again.
The step of high water-fast siliceous cationic polyelectrolyte autopolymer resistance type thin film humidity-sensitive element method for making is as follows:
1) with dip coater the interdigital gold electrode of devitrified glass is immersed in the wet-sensitive liquid 1～4 minute, after lifting, take out by the speed of 2～6mm/ second, made humidity-sensitive film in 5～15 hours 80～120 ℃ of thermal treatments; The preparation method of wet-sensitive liquid is: by gamma-aminopropyl-triethoxy-silane and bromination of n-butane, 1: 0.5 in molar ratio～2 add reaction bulbs, and argon atmospher and 40～50 ℃ of following reactions 20～30 hours, carry out quaternary ammoniated; Be warming up to 50～70 ℃ then, add the absolute ethyl alcohol of both gross weights 11～15% again, reaction 1～3 hour is hydrolyzed under acid condition; Use ether sedimentation,, obtain the gamma-aminopropyl-triethoxy-silane quaternary ammonium salt, be made into the ethanolic solution of 30～50% concentration expressed in percentage by weights at last with it through vacuum drying;
2) the interdigital gold electrode of devitrified glass that will have humidity-sensitive film is at 30～40 ℃, and humidity is under 60～90%RH environment, 100～600mv in addition, and the alternating voltage of 1kHz, aging 20～50 hours of energising makes high water-fast silicon-containing polymer resistance type thin film humidity-sensitive element.
Advantage of the present invention is:
1. adopt the interdigital gold electrode of particular design devitrified glass: interdigital is 8～16 pairs, and interdigital width is 20～80 μ m, and interdigital gap is 40～80 μ m, each interdigital length is 2～3mm, and electrode size is 6mm * 5mm * 0.5mm, and it is little to have a volume, low cost, advantage such as easy to use.The kind electrode structure reduces the humidity-sensitive element impedance owing to interdigital thin and close, and sensitivity improves, thereby can measure the humidity under the low wet environment, and sensing range is widened;
2. when the preparation humidity-sensitive film, concentration by control gamma-aminopropyl-triethoxy-silane quaternary amine ethanol solution, and quaternary ammoniated degree, impedance height and the moisture absorption and the dehumidification response speed of scalable humidity-sensitive element, make the humidity-sensitive element that makes have good humidity hysteresis characteristic (～1%RH), the sense of the becoming reconciled response characteristic that wets;
3. in the siliceous autopolymer, change into silanol base (Si-OH) by alkoxy (Si-OR) hydrolysis, the hydrophobicity network that part autohemagglutination becomes to have cross-linked structure, another part can be further with the devitrified glass sheet matrix on hydroxyl (OH) form hydrogen bonded, strengthened the cohesiveness of humidity sensing film and devitrified glass sheet matrix, both synergies make the humidity-sensitive element that makes have high water-proofing performance;
4. under 30～40 ℃ and 60～90%RH humidity environment, element is passed to certain alternating voltage, carry out burin-in process, can make element reach steady state (SS) within a short period of time, have high stability and anti-high humidity environment ability;
5. adopt the humidity-sensitive material of the present invention's design and the humidity-sensitive element of method preparation, be to combine as wet sensory material and with the interdigital gold electrode of the devitrified glass with particular design with siliceous cationic polyelectrolyte autopolymer, constitute the advanced high molecule electric resistance type humidity sensitive element that has the two advantage concurrently, have excellent humidity sensing characteristic.Its hygrometric wide ranges (5～100%RH), highly sensitive, not only anti-high humidity environment ability is strong, and still have good humidity sensing characteristic in the low humidity scope, have little humidity hysteresis and high water-proofing performance especially, and the preparation of humidity-sensitive material and humidity-sensitive element easy row simple for production, the element high conformity, cost is low, is suitable for producing in batches.
Description of drawings
Fig. 1 is the structural representation of humidity-sensitive element of the present invention;
Fig. 2 is the typical response characteristic figure of humidity-sensitive element of the present invention;
Fig. 3 is the typical humidity hysteresis performance plot of humidity-sensitive element of the present invention;
Fig. 4 is the typical water-proofing performance figure of humidity-sensitive element of the present invention.
Embodiment
The principle of the invention is to adopt siliceous cationic polyelectrolyte autopolymer to combine as wet sensory material and with the interdigital gold electrode of the devitrified glass with particular design, constitutes the advanced high molecule electric resistance type humidity sensitive element that has the two advantage concurrently.Provide transportable ion by the quaternary amine in the siliceous cationic polyelectrolyte autopolymer; In the autopolymer, by the siloxane hydrolytic crosslinking, the hydrophobicity network that autohemagglutination becomes to have cross-linked structure, with the dehumidification of its regulation and control humidity-sensitive element, and the water tolerance of raising humidity-sensitive element.Simultaneously, utilize its siloxane group to change into the silanol base, can form hydrogen bonded with the hydroxyl on the devitrified glass sheet matrix, strengthen the cohesiveness of humidity sensing film and devitrified glass sheet matrix, both act synergistically, thereby improve the water tolerance of humidity-sensitive element greatly.Adopt this humidity-sensitive material, be equipped with on the devitrified glass sheet matrix thin and close golden interdigitally again, the humidity-sensitive element impedance is reduced, sensitivity improves.Thereby make the advanced high molecule electric resistance type humidity sensitive element that the humidity sensing characteristic excellence has high water-proofing performance again simultaneously, and easy row simple for production, cost is low.
The silicon-containing polymer resistance type thin film humidity-sensitive element has devitrified glass sheet matrix 1, evaporation, photoetching have many to interdigital gold electrode 2 on the microcrystalline glass matrix surface, on interdigital gold electrode, be connected with lead-in wire 4, be coated with humidity-sensitive film 3 on microcrystalline glass and interdigital gold electrode surfaces, humidity-sensitive film is high water-fast siliceous cationic polyelectrolyte autopolymer.
Evaporation, photoetching have 8～16 pairs of interdigital gold electrodes on the microcrystalline glass matrix surface, and the interdigital width of interdigital gold electrode is 20～80 μ m, and interdigital gap is 40～80 μ m, and each interdigital length is 2～3mm, and electrode size is 6mm * 5mm * 0.5mm.Humidity-sensitive film is siliceous cationic polyelectrolyte autopolymer, and it forms cationic monomer-gamma-aminopropyl-triethoxy-silane quaternary ammonium salt by gamma-aminopropyl-triethoxy-silane and bromination of n-butane, forms through the heat cross-linking autohemagglutination again.Wet-sensitive liquid is the ethanol solution of gamma-aminopropyl-triethoxy-silane quaternary ammonium salt, and concentration expressed in percentage by weight is 30～50%.
Embodiment 1:
1. electrode cleans
With the interdigital gold electrode of devitrified glass through absolute ethyl alcohol and acetone soaking and washing, dry for standby.
2. the preparation of gamma-aminopropyl-triethoxy-silane quaternary ammonium salt
With gamma-aminopropyl-triethoxy-silane and bromination of n-butane, added reaction, and, carry out quaternary ammoniated in 1: 2 in molar ratio argon atmospher and 40 ℃ of following reactions 30 hours; Be warming up to 50 ℃ of reactions 3 hours that under acid condition, are hydrolyzed then; Use ether sedimentation,, obtain the gamma-aminopropyl-triethoxy-silane quaternary ammonium salt through vacuum drying.
3. dip-coating prepares humidity-sensitive film and aftertreatment
Adopt dip coater that the interdigital gold electrode of devitrified glass is immersed in the wet-sensitive liquid (ethanol solution of the gamma-aminopropyl-triethoxy-silane quaternary ammonium salt that 30% weight percent is dense), after 4 minutes, lift, take out and insert in the constant temperature oven with 2mm/ speed second, 80 ℃ of thermal treatments 15 hours, make humidity-sensitive film.
4. burin-in process
With having the humidity-sensitive element of humidity-sensitive film on the interdigital gold electrode of devitrified glass, place climatic chamber, at 40 ℃, under the 60%RH environment, add 600mv, the alternating voltage of 1kHz, aging 20 hours of energising.
Embodiment 2:
1. electrode cleans with embodiment 1
2. the preparation of gamma-aminopropyl-triethoxy-silane quaternary ammonium salt
With gamma-aminopropyl-triethoxy-silane and bromination of n-butane, added reaction, and, carry out quaternary ammoniated in 1: 1 in molar ratio argon atmospher and 45 ℃ of following reactions 25 hours; Be warming up to 60 ℃ of reactions 2 hours that under acid condition, are hydrolyzed then; Use ether sedimentation,, obtain the gamma-aminopropyl-triethoxy-silane quaternary ammonium salt through vacuum drying.
3. dip-coating prepares humidity-sensitive film and aftertreatment
Adopt dip coater that the interdigital gold electrode of devitrified glass is immersed in the wet-sensitive liquid (ethanol solution of the gamma-aminopropyl-triethoxy-silane quaternary ammonium salt that 40% weight percent is dense), after 2 minutes, lift, take out and insert in the constant temperature oven with 4mm/ speed second, 110 ℃ of thermal treatments 8 hours, make humidity-sensitive film.
4. burin-in process
With having the humidity-sensitive element of humidity-sensitive film on the interdigital gold electrode of devitrified glass, at 30 ℃, under the 90%RH environment, add 200mv, the alternating voltage of 1kHz, aging 30 hours of energising.
Its wet quick response characteristic such as Fig. 2, humidity hysteresis characteristic such as Fig. 3, water-proofing performance such as Fig. 4.
Embodiment 3:
1. electrode cleans with embodiment 1
2. the preparation of gamma-aminopropyl-triethoxy-silane quaternary ammonium salt
With gamma-aminopropyl-triethoxy-silane and bromination of n-butane, added reaction, and, carry out quaternary ammoniated in 1: 0.5 in molar ratio argon atmospher and 50 ℃ of following reactions 20 hours; Be warming up to 70 ℃ of reactions 1 hour that under acid condition, are hydrolyzed then; Use ether sedimentation,, obtain the gamma-aminopropyl-triethoxy-silane quaternary ammonium salt through vacuum drying.
3. dip-coating prepares humidity-sensitive film and aftertreatment
Adopt dip coater that the interdigital gold electrode of devitrified glass is immersed in the wet-sensitive liquid (ethanol solution of the gamma-aminopropyl-triethoxy-silane quaternary ammonium salt that 50% weight percent is dense), after 1 minute, lift, take out and insert in the constant temperature oven with 6mm/ speed second, 120 ℃ of thermal treatments 5 hours, make humidity-sensitive film.
3. burin-in process
With having the humidity-sensitive element of humidity-sensitive film on the interdigital gold electrode of devitrified glass, at 30 ℃, under the 80%RH environment, add 100mv, the alternating voltage of 1kHz, aging 50 hours of energising.
Claims (2)
1. one kind high water-fast siliceous cationic polyelectrolyte autopolymer resistance type thin film humidity-sensitive element, it is characterized in that: it has devitrified glass sheet matrix (1), on the microcrystalline glass matrix surface, evaporate, photoetching has many to interdigital gold electrode (2), on interdigital gold electrode, be connected with lead-in wire (4), on devitrified glass sheet matrix and interdigital gold electrode surfaces, be coated with humidity-sensitive film (3), humidity-sensitive film (3) is siliceous cationic polyelectrolyte autopolymer, siliceous cationic polyelectrolyte autopolymer by gamma-aminopropyl-triethoxy-silane and bromination of n-butane through quaternary ammoniated and hydrolysis reaction, form cationic monomer gamma-aminopropyl-triethoxy-silane quaternary ammonium salt, form through the heat cross-linking autohemagglutination again.
2. a kind of high water-fast siliceous cationic polyelectrolyte autopolymer resistance type thin film humidity-sensitive element according to claim 1, it is characterized in that: evaporation, photoetching have 8～16 pairs of interdigital gold electrodes on the described microcrystalline glass matrix surface, the interdigital width of interdigital gold electrode is 20～80 μ m, interdigital gap is 40～80 μ m, each interdigital length is 2～3mm, and electrode size is 6mm * 5mm * 0.5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100536917A CN100439910C (en) | 2006-09-29 | 2006-09-29 | High-polymer resistance type thin film humidity-sensitive element with high water-proofing performance and producing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100536917A CN100439910C (en) | 2006-09-29 | 2006-09-29 | High-polymer resistance type thin film humidity-sensitive element with high water-proofing performance and producing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1932498A CN1932498A (en) | 2007-03-21 |
| CN100439910C true CN100439910C (en) | 2008-12-03 |
Family
ID=37878441
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100536917A Expired - Fee Related CN100439910C (en) | 2006-09-29 | 2006-09-29 | High-polymer resistance type thin film humidity-sensitive element with high water-proofing performance and producing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100439910C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102279212A (en) * | 2011-07-18 | 2011-12-14 | 浙江大学 | Resistive moisture sensor capable of measuring humidity of low-humidity environment and manufacturing method thereof |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101324539B (en) * | 2008-07-22 | 2011-10-26 | 浙江大学 | Polymer compound resistor type humidity sensitive element with nanometer fiber structure and manufacturing method thereof |
| CN106046244B (en) * | 2016-05-30 | 2018-07-24 | 广州海谷电子科技有限公司 | Non-electrolyte family macromolecule wet sensitive resin and preparation method thereof and the electrically conductive ink and moisture sensor prepared based on wet sensitive resin |
| CN109188581A (en) * | 2018-09-04 | 2019-01-11 | 安徽新恒辉反光材料有限公司 | A kind of highlighted vapor-permeable type reflectorized material and preparation method thereof |
| CN109939875B (en) * | 2019-03-11 | 2021-01-05 | 哈尔滨工业大学（深圳） | Surface acoustic wave atomization chip, manufacturing method and device |
| CN113088873B (en) * | 2021-03-15 | 2021-12-21 | 中南大学 | Ethanol steam and gap sensitive element and development method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4681855A (en) * | 1985-08-05 | 1987-07-21 | The United States Of America As Represented By The Secretary Of Commerce | Humidity sensing and measurement employing halogenated organic polymer membranes |
| US5546802A (en) * | 1994-03-31 | 1996-08-20 | Tdk Corporation | Humidity sensor and method for making |
| CN1320817A (en) * | 2000-03-31 | 2001-11-07 | Tdk株式会社 | Moisture sensor and mfg. method thereof |
| CN2606353Y (en) * | 2002-12-19 | 2004-03-10 | 李扬 | Organic high-molecular and inorganic nanometer composite resistance film humidity sensitive element |
| CN1655375A (en) * | 2005-01-18 | 2005-08-17 | 黄德欢 | Siliceous copolymer resistor type thin film humidity sensitive element and method for making same |
| CN2788362Y (en) * | 2005-01-18 | 2006-06-14 | 黄德欢 | Resistance-type film humidity-sensitive element containing silicon copolymer |
| CN201016949Y (en) * | 2006-09-29 | 2008-02-06 | 浙江大学 | Macromolecular resistance type thin film humidity element with strong water resistance |
-
2006
- 2006-09-29 CN CNB2006100536917A patent/CN100439910C/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4681855A (en) * | 1985-08-05 | 1987-07-21 | The United States Of America As Represented By The Secretary Of Commerce | Humidity sensing and measurement employing halogenated organic polymer membranes |
| US5546802A (en) * | 1994-03-31 | 1996-08-20 | Tdk Corporation | Humidity sensor and method for making |
| CN1320817A (en) * | 2000-03-31 | 2001-11-07 | Tdk株式会社 | Moisture sensor and mfg. method thereof |
| CN2606353Y (en) * | 2002-12-19 | 2004-03-10 | 李扬 | Organic high-molecular and inorganic nanometer composite resistance film humidity sensitive element |
| CN1655375A (en) * | 2005-01-18 | 2005-08-17 | 黄德欢 | Siliceous copolymer resistor type thin film humidity sensitive element and method for making same |
| CN2788362Y (en) * | 2005-01-18 | 2006-06-14 | 黄德欢 | Resistance-type film humidity-sensitive element containing silicon copolymer |
| CN201016949Y (en) * | 2006-09-29 | 2008-02-06 | 浙江大学 | Macromolecular resistance type thin film humidity element with strong water resistance |
Non-Patent Citations (6)
| Title |
|---|
| A very sensitive porous silicon based humidity sensor. G. Di Francia等.Sensors and Actuators B,Vol.111-112 . 2005 |
| A very sensitive porous silicon based humidity sensor. G. Di Francia等.Sensors and Actuators B,Vol.111-112. 2005 * |
| 电阻型高分子湿度传感器设计. 郭学全等.佳木斯大学学报（自然科学版），第21卷第3期. 2003 |
| 电阻型高分子湿度传感器设计. 郭学全等.佳木斯大学学报(自然科学版)，第21卷第3期. 2003 * |
| 高分子型湿敏传感结构材料及器件. 杨慕杰等.高分子通报，第3期. 1999 |
| 高分子型湿敏传感结构材料及器件. 杨慕杰等.高分子通报，第3期. 1999 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102279212A (en) * | 2011-07-18 | 2011-12-14 | 浙江大学 | Resistive moisture sensor capable of measuring humidity of low-humidity environment and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1932498A (en) | 2007-03-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100439910C (en) | High-polymer resistance type thin film humidity-sensitive element with high water-proofing performance and producing method thereof | |
| CN100523799C (en) | Polyelectrolyte / intrinsic conducting polymer composite humidity sensor and its production method | |
| Lee et al. | Humidity sensor using epoxy resin containing quaternary ammonium salts | |
| CN1203312C (en) | Capacitance type relative humidity sensor | |
| CN102279212A (en) | Resistive moisture sensor capable of measuring humidity of low-humidity environment and manufacturing method thereof | |
| CN104634833A (en) | MEMS capacitance-type relative humidity sensor and preparation method thereof | |
| CN201016949Y (en) | Macromolecular resistance type thin film humidity element with strong water resistance | |
| CN1215578C (en) | Orgaic polymer-inorganic nano composite resistance type thin film humidity sensitive element and its manufacturing method | |
| Lee et al. | Humidity sensitivity of hybrid polyelectrolytes prepared by the sol-gel process | |
| CN2606353Y (en) | Organic high-molecular and inorganic nanometer composite resistance film humidity sensitive element | |
| CN100385703C (en) | Siliceous copolymer resistor type thin film humidity sensitive element and method for making same | |
| CN1210565C (en) | Miniature humidity sensor | |
| Lv et al. | A highly water-resistive humidity sensor based on silicon-containing polyelectrolytes prepared by one-pot method | |
| US20070039385A1 (en) | Resistive thin film humidity sensitive device based on silicone-containing copolymer and its preparation method | |
| CN1384354A (en) | Compound polymer resistor type film humidity-sensitive element and its making process | |
| CN201096743Y (en) | Focused electrolyte/feature conductive polymer compound resistance film humidity sensitive part | |
| US6247349B1 (en) | Polymer-based humidity sensing elements | |
| CN2788362Y (en) | Resistance-type film humidity-sensitive element containing silicon copolymer | |
| CN2779396Y (en) | Macro-molecule resistor type film dew sensor having interpenetrating networks structure | |
| CN115290709B (en) | Resistive humidity sensor based on cross-linked organic quaternary ammonium salt and preparation method thereof | |
| CN1300575C (en) | High molecular resistance type thin film humidity sensitive element with interpenetrating network structure and fabricating method thereof | |
| CN102749359A (en) | Cationic polyelectrolyte-polypyrrole composite polymer resistive-type humidity-sensitive element and manufacturing method thereof | |
| CN106872536A (en) | A kind of capacitive moisture sensor based on porous humidity-sensitive film and preparation method thereof | |
| CN201096744Y (en) | A polymer graft carbon black compound resistance film humidity sensitive part | |
| KR20190142799A (en) | Humidity Sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081203 Termination date: 20150929 |
|
| EXPY | Termination of patent right or utility model |