CN100428404C - Enclosed infrared heating device for semiconductor wafer - Google Patents

Abstract

A closed infrared heating device for semiconductor wafers, comprising an infrared generating chamber inside a housing with a sealed cover plate, a transmission window sealed by transmission glass is provided on one side of the housing, and two ends of the chamber are respectively installed in lamps. There are at least two heating lamp tubes on the tube row seat and the lamp tube seat. The other side of the lamp tube is equipped with a reflector plate. Each lamp tube seat is installed on the cover plate through an insulating column and connected with the power supply seat. The sub-water inlet and sub-return port at both ends of the cooling water channel are respectively connected with the corresponding return water port and water inlet of the water diversion row. The cooling water channel in the water diversion row is connected with the cooling water channel in the cover plate. There is cooling water in the shell The channel communicates with the cooling water channel in the cover plate, and there are air inlets and air outlets on both sides of the shell. The device of the invention is suitable for the radiation heating of the moving chip or the fixed chip of the semiconductor equipment. It is non-polluting, can work in a vacuum environment, and can be used for heating materials such as silicon chips with high cleanliness requirements.

Description

Enclosed infrared heating device for semiconductor wafer

technical field

The present invention is semiconductor material processing equipment, and further refers to a closed infrared heating device for heating semiconductor wafers.

Background technique

Wafer heating on the semiconductor process line generally adopts non-contact radiation heating. In traditional heating devices, the heating lamp directly faces the wafer for heating. The lamp is not cooled. Due to poor heat dissipation, the temperature of the lamp holder and the surface of the lamp The rise is very high, causing high-temperature volatiles to affect the cleanliness of the system. The high temperature on the surface of the lamp tube softens the glass bulb of the lamp tube, which affects the life of the lamp tube, and the heating efficiency is not high. As the cleanliness requirements of semiconductor manufacturing process lines are getting higher and higher, wafer heating requires non-polluting heating methods and heating devices with high thermal efficiency.

Contents of the invention

The technical problem to be solved by the present invention is to propose a closed infrared heating device for semiconductor wafers in view of the defects in the prior art, which has no pollution, can work in a vacuum environment, and can be used for heating cleanliness requirements For materials such as very high silicon wafers, the object to be heated can be a moving object or a fixed object.

The technical solution of the present invention is that the closed infrared heating device of the semiconductor wafer includes a housing with a sealing cover, and the inside of the housing is an infrared generating cavity. The structural feature is that the housing opposite to the sealing cover is The side is provided with a transmission window sealed by transmission glass. Corresponding to the transmission window, there are at least two heating lamp tubes with two ends respectively installed on the lamp tube seat and the lamp tube seat in the infrared generating cavity, and the The other side of the heating lamp tube opposite to the transmission window is equipped with a reflector, and each lamp tube seat corresponding to the number of heating lamp tubes is installed on the cover plate through an insulating column, and its electrodes are connected with the insulating power supply seat installed on the cover plate. The sub-water inlets and sub-return ports at both ends of the cooling water channel in each lamp holder are respectively communicated with the corresponding return water ports and water inlets of the water-distribution row through corresponding water pipes, and the water-distribution row with the water inlet and return port The cooling water channel in the housing is connected to the cooling water channel in the cover plate through its total return port and the main water inlet to form a water cooling circuit. There are also multiple cooling water channels in the housing that are the same as the cooling water channels in the cover plate In communication, there are at least one air inlet and air outlet on the corresponding two sides of the casing.

The present invention is further described below.

Referring to Fig. 1 and Fig. 2, the device of the present invention includes a housing 18 with a sealing cover 6, and the inside of the housing 18 is an infrared generating cavity 19, and its structural feature is that the housing 18 opposite to the sealing cover 6 is a The side is provided with a transmission window 20 sealed by the transmission glass 14, and corresponding to the transmission window 20, the infrared generating chamber 19 is provided with at least two heating tubes installed on the lamp tube row seat 11 and the lamp tube seat 16 respectively. The lamp tube 8, the other side of the heating lamp tube 8 opposite to the transmission window 20 is equipped with a reflector 7, and each lamp tube holder 16 corresponding to the number of the heating lamp tube 8 is installed on the cover plate 6 through the insulating column 1 and its The electrodes are connected with the insulating power supply seat 5 mounted on the cover plate 6, see Fig. 1, 2, 4, 5, the sub-water inlet 21 and the sub-return water port 22 at both ends of the cooling water channel in each lamp holder 16 respectively pass through The corresponding water pipe 4 communicates with the corresponding water return port 23 and the water inlet 24 of the water distribution row 17, and the cooling water channel in the water distribution row 17 provided with the water inlet 24 and the water return port 23 passes through its total return water port 25 and the total water inlet. The water port 26 is connected to the cooling water channel in the cover plate 6 to form a water cooling circuit. There are also multiple cooling water channels 3 in the housing 18 (see FIG. 1 ) communicating with the cooling water channel in the cover plate 6 , there are at least one air inlet 2 and an air outlet 12 on the corresponding two sides of the casing 18 respectively. Referring to FIG. 1 , a cooling water jacket 9 may also be provided between the reflection plate 7 and the cover plate 6 , and a cooling water channel may be provided in the lamp tube seat 11 .

The technical principle and working process of the present invention are (referring to Fig. 1), the power supply supplies power to the heating lamp tube 8 through the insulating power supply seat 5, and the lamp tube just produces high-power infrared radiation, and the infrared rays pass through the lamp with good light transmittance and heat resistance. The transmissive glass 14 heats the wafer 10, and the emitting plate 7 can reflect as much infrared rays as possible back to heat the wafer 10, effectively improving the heating efficiency of the device; the cooling water jacket 9 with a good cooling effect can effectively reduce the reflective plate 7 and the temperature of the cavity; the lamp tube row seat 11, each lamp tube seat 16 and the housing 18, and the cover plate 6 are cooled by water, and the cavity is ventilated and cooled by compressed air through the air inlet 2 and the air outlet 12 so that all The surface of the lamp tube is sufficiently dissipated, and the cooling effect of the whole device is good.

As can be seen from the above, the present invention is a closed infrared heating device for semiconductor wafers, which is suitable for radiation heating of moving wafers or fixed wafers (such as silicon wafers) of semiconductor equipment, and the vacuum degree of the heating object can be better than 1 × 10 Above ^-4 Pa, the heating temperature can be in the range of 400°C-800°C, the heating power is between 5KW-25KW, and the size of the heating wafer is 100-205mm; it is non-polluting, can work in a vacuum environment, and can be used for heating and cleaning Materials such as silicon wafers with high requirements.

Description of drawings

Fig. 1 is a schematic diagram of a longitudinal sectional structure of an embodiment of the present invention;

Fig. 2 is A-A to sectional structure in Fig. 1;

Fig. 3 is the partial structure of B-B direction cross-section among Fig. 2;

Fig. 4 is a kind of embodiment cross-sectional structure schematic diagram of water-distributing row 17;

Fig. 5 is a structural front view of an embodiment of the lamp holder 16;

In said attached drawings:

1-Insulation column, 2-Air inlet, 3-Cooling water channel,

4-water pipe, 5-insulated power supply seat, 6-cover plate,

7-reflector, 8-heating lamp, 9-cooling water jacket,

10-chip, 11-lamp tube seat, 12-air outlet,

13-sealing ring, 14-transmissive glass, 15-press plate,

16-Lamp holder, 17-Water divider, 18-Shell,

19-infrared generation cavity, 20-transmission window, 21-point water inlet,

22-point return port, 23-return port, 24-water inlet,

25-total water return port, 26-total water inlet.

Detailed ways

According to the accompanying drawings and the device of the present invention with the above-mentioned structure, there are five heating lamp tubes 8, five corresponding lamp tube holders 16, the device heating power is 25KW, and the heating temperature is the highest 800°C; the transmission glass 14 shown in Fig. 1 is made of high-purity Quartz glass, a high-temperature-resistant sealing ring 13 is installed between it and the housing 18, and is fixed with a pressing plate 15. The reflecting plate 7 is made of brass plate, and the reflecting surface is plated with gold; Vacuum isolated power supply.

Claims (5)

1, a kind of enclosed infrared heating device of semiconductor wafer, the housing (18) that comprises with closure plate (6), housing (18) inside is infrared ray generation cavity (19), it is characterized in that, housing (18) one sides that described seal cover board (6) is relative are provided with the transmission window (20) by transmissive glass (14) sealing, be provided with at least two that two ends are installed in respectively on fluorescent tube row seat (11) and the tube face (16) corresponding to described transmission window (20) in the described infrared ray generation cavity (19) and heat fluorescent tubes (8), heating fluorescent tube (8) opposite side relative with described transmission window (20) is equipped with reflecting plate (7), each tube face (16) corresponding with heating fluorescent tube (8) quantity is installed in the insulation Power Block (5) that cover plate (6) is gone up and its electrode is contained in together on the cover plate (6) through insulated column (1) and links to each other, the branch water inlet (21) at the cooling-water duct two ends in the described tube face (16) and branch water return outlet (22) are respectively by corresponding water return outlet (23) and water inlet (24) connection of corresponding water pipe (4) with branch water row (17), the cooling-water duct that is provided with among the branch water row (17) of described water inlet (24) and water return outlet (23) is connected with cooling-water duct in the cover plate (6) and forms water cooling labyrinth through its total water return outlet (25) and total water inlet (26), also there is the described cooling-water duct in the same cover plate of multichannel cooling-water duct (3) (6) to be communicated with in the described housing (18), at least one air inlet (2) and air outlet (12) arranged respectively in the corresponding both sides of housing (18).

2, according to the enclosed infrared heating device of the described semiconductor wafer of claim 1, between reflecting plate (7) and cover plate (6), be provided with cooling jacket (9).

3, according to the enclosed infrared heating device of the described semiconductor wafer of claim 1, in fluorescent tube row's seat (11), cooling-water duct is set.

4, according to the enclosed infrared heating device of the described semiconductor wafer of claim 1, described transmissive glass (14) adopts pure quartz glass.

5, according to the enclosed infrared heating device of the described semiconductor wafer of claim 1, described reflecting plate (7) is made of brass sheet, and reflecting surface is gold-plated.

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