CN100425405C - Freezing nanometer abrasive polishing pad and its prepn. method - Google Patents
Freezing nanometer abrasive polishing pad and its prepn. method Download PDFInfo
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- CN100425405C CN100425405C CNB2006100411127A CN200610041112A CN100425405C CN 100425405 C CN100425405 C CN 100425405C CN B2006100411127 A CNB2006100411127 A CN B2006100411127A CN 200610041112 A CN200610041112 A CN 200610041112A CN 100425405 C CN100425405 C CN 100425405C
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- 238000005498 polishing Methods 0.000 title claims abstract description 70
- 238000007710 freezing Methods 0.000 title claims abstract description 31
- 230000008014 freezing Effects 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title description 11
- 239000007788 liquid Substances 0.000 claims abstract description 19
- 239000003082 abrasive agent Substances 0.000 claims abstract description 16
- 239000000654 additive Substances 0.000 claims description 13
- 230000000996 additive effect Effects 0.000 claims description 11
- 239000003109 Disodium ethylene diamine tetraacetate Substances 0.000 claims description 9
- ZGTMUACCHSMWAC-UHFFFAOYSA-L EDTA disodium salt (anhydrous) Chemical compound [Na+].[Na+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O ZGTMUACCHSMWAC-UHFFFAOYSA-L 0.000 claims description 9
- 150000004985 diamines Chemical class 0.000 claims description 9
- 235000019301 disodium ethylene diamine tetraacetate Nutrition 0.000 claims description 9
- 229920002134 Carboxymethyl cellulose Polymers 0.000 claims description 7
- 239000002202 Polyethylene glycol Substances 0.000 claims description 7
- 229920001223 polyethylene glycol Polymers 0.000 claims description 7
- 239000006185 dispersion Substances 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- 239000000725 suspension Substances 0.000 claims description 5
- 239000001768 carboxy methyl cellulose Substances 0.000 claims description 4
- 235000010948 carboxy methyl cellulose Nutrition 0.000 claims description 4
- 239000008112 carboxymethyl-cellulose Substances 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 238000013019 agitation Methods 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 15
- 239000007779 soft material Substances 0.000 abstract description 2
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 239000002105 nanoparticle Substances 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000002002 slurry Substances 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 238000000227 grinding Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000002270 dispersing agent Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 2
- 229910001651 emery Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000010808 liquid waste Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002113 nanodiamond Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
A frozen polishing pad made of abrasive nanoparticles suitable for thermosensitive material and soft material features that the liquid is used as adhesive to adhere the abrasive material together by freezing, so forming a polishing pad.
Description
Technical field
The present invention relates to a kind of nanometer abrasive polishing pad and preparation method thereof, specifically a kind ofly utilize liquid, the nanometer abrasive bonding is formed polishing pad by freezing as binding agent.
Background technology
As everyone knows, traditional CMP (chemical mechanical polishing method) system is made up of the work holder of a rotation, the workbench and polishing fluid (slurry) the feed system three parts of carrying polishing pad.During polishing, the workpiece of rotation is pressed on the polishing pad that rotates with workbench with certain pressure, and flow between workpiece and polishing pad by the polishing fluid that sub-micron or nanometer abrasive and chemical liquids are formed, and at surface of the work generation chemical reaction, the chemical reactant that surface of the work forms is removed by the mechanical friction effect of abrasive particle.Owing to selecting the free abrasive softer or suitable with workpiece hardness than workpiece for use, in the alternation procedure of chemical membrane and mechanical film forming, from surface of the work removal layer of material as thin as a wafer, the realization ultra-precision surface is processed by chemical and mechanical acting in conjunction.Although this traditional CMP technology is used widely in ultra-precision surface processing, but also show certain shortcoming in actual applications: (1) traditional CMP is based on trisome (free abrasive, polishing pad and silicon chip) abrasion mechanism, technological parameter is many, process is unstable, be difficult for realizing control automatically, production efficiency is low.(2) because polishing pad is to have certain flexible organic fabric, the selectivity of during polishing material being removed is not high, causes producing excessive polishing (Over polishing), saucerization (Dishing), nitride etch defectives such as (Nitride erosion).(3) a part of free abrasive in polishing back can be embedded in thin layer surface, not easy cleaning.And the paste composition complexity, the removing of polished surface residual slurry is a difficult problem of cleaning behind the CMP.(4) owing to abrasive particle skewness between polishing pad and workpiece, the material removing rate of workpiece each several part is inconsistent, influences surface flatness.Particularly to large-size workpiece, this influence is more outstanding.(5) in the polishing process, polishing pad produces plastic deformation and becomes smooth gradually, or the pad interface micropore surface ability that makes it hold slurry and get rid of scrap takes place to stop up reduces, and causes material removing rate to descend in time.Need finishing constantly and wetting polishing pad to recover its surface roughness and porous.The uneven wear of polishing pad makes the polishing process instability to be difficult to carry out parameter optimization in addition.(6) cost of consumptive materials such as CMP slurry, polishing pad, conditioner discs accounts for about 70% of CMP totle drilling cost, and the cost of polishing slurries just accounts for 60%～80% of consumptive material.(7) polishing slurries management and slug are handled also quite trouble.
In sum, along with more and more higher to the requirement of the efficient of cmp planarizationization, cost, uniformity, reliability, technology controlling and process ability etc.When utilizing polishing pad to carry out fine finishining, it is strong to be badly in need of a kind of adaptability, easily manufactured at present, and grinding heat is little, and free abrasive among the polishing pad replacement traditional C MP of employing concretion abrasive and polishing pad are for using.
Summary of the invention
The purpose of this invention is to provide a kind of freezing nanometer abrasive polishing pad and preparation method thereof, to adapt to the accurately machined demand of present CMP.
Technical scheme of the present invention is:
A kind of freezing nanometer abrasive polishing pad, it is characterized in that mainly by nanometer abrasive, additive and freezing after play cementation liquid form, wherein abrasive material accounts for 10%～70% of polishing pad gross weight, and additive accounts for 5%～9% of gross weight, the liquid of surplus for finally build-uping ice.
Described additive or by polyhydroxy diamines, the alkylol APEO, disodium EDTA and carboxymethyl cellulose are formed, or by polyhydroxy diamines, the alkylol APEO, disodium EDTA and polyethylene glycol are formed, their proportion relation is: polyhydroxy diamines accounts for 2%～3% of whole polishing pad weight, the alkylol APEO accounts for 2%～3% of whole polishing pad weight, disodium EDTA accounts for 0.5%～1% of whole polishing pad weight, and carboxymethyl cellulose or polyethylene glycol account for 0.5%～2% of whole polishing pad weight.
Described nanometer abrasive is Al
2O
3, SiC, Cr
2O
3, SiO
2, CeO
2With one or more the combination in the bortz powder.
The described liquid that finally build-ups ice is water.
The preparation method of a kind of freezing nanometer abrasive polishing pad of above-mentioned freezing emery wheel is characterized in that may further comprise the steps:
A, at first that proportioning is good nanometer abrasive, additive and liquid agitation are even, obtain abrasive material and are in the liquid state of dispersion, suspension or colloidal state and treat freezing raw material and it is inserted in the mould;
B, then above-mentioned mould is put into freezing equipment, carry out to the condition of subzero 70 degree freezingly subzero 1, treat to treat that freezing raw material is frozen into solid fully and promptly gets the freezing nanometer abrasive polishing pad identical with die shape in the mould.
Beneficial effect of the present invention:
1, makes simply, be shaped easily, can manufacture different shape.
2, be suitable for the abrasive particle shaping of various materials and granularity.
3, the grinding heat that produces in the process is very little, helps preventing to be ground the generation of parts thermal stress, and easy to use, can guarantee that emery wheel can not melt voluntarily because of environment temperature by install methods such as cooling device, filling liquid nitrogen additional at the bistrique position.
4, adhesion strength can satisfy instructions for use fully.Its hardness and intensity are quite big after liquid build-ups ice, and have both guaranteed the intensity that abrasive particle combines with ice, and ice itself also can participate in certain cutting.Become its hardness of ice of piece and the intensity can be with the steel plate avulsion, it be exactly best proof that the Titanic seagoing vessel is destroyed in marine floating ice.
5, can realize the self-lubricating grinding, can not add lubricant in the process, help environmental protection, adapt to the developing direction of current green manufacturing.
6, the manufacturing for the ultrathin crystal material provides effective machining tool.
7, the high-precision surface processing for flexible material and nonmetallic materials part provides brand-new machining tool, will cause the change of materials processing mode, helps opening up the new purposes of this class material.
8, easy to use, but now-making-now-using.
9, operating process is simple, can realize grinding tool from dressing, do not have to change and trimming polished pad and clear up the shut-down problem that polishing slurries brought, do not have the maintenance and the handling problem of polishing fluid.
10, can work under high speed, rotating speed can be got to hundreds of to be changeed, and helps improving working (machining) efficiency, has overcome traditional excessive shortcoming of the too high abrasive material of CMP rotating speed.
11, owing to adopt concretion abrasive polishing pad, do not have free abrasive, therefore can think based on two body abrasion mechanisms.
12, has superior planarization capability, can rapidly remove the oxide-film of ledge, and the oxide-film at low-lying place is not influenced by mechanism, and is strong to the selective removal ability of convex-concave surface material, and the surface topography height can reach 200: 1 with the ratio of leveling film thickness.
13, in the chip multilayer wiring, make direct high-density plasma (HDP) shallow trench isolation become possibility, no longer need reactive ion etching (RIE) process from (STI) polishing.
14, can reach very little interior heterogeneity (WIW-UN) of wafer and the interior heterogeneity (WID-NU) of chip.
15, has polishing automatic stop function (Self-stopping).Since very insensitive to crossing throwing, minimum saucerization and corrosion only produced, be equivalent to the polishing behavior and stop automatically.
16, abrasive material utilization rate height reduces the pollution of contaminant particles to polished surface effectively, and finished surface cleans easily, and liquid waste processing is simple, can effectively reduce cost.
17, state-variable is few, and process is stable, has repeatability, realizes automation control easily.
18, can realize computer-controlled chemical reaction each/or medicine reaction.
19, according to the difference of additive, its invention also can be used for making non-CMP grinding grinding tool, can be used for the final polishing of industries such as crystal, glass.
Description of drawings
The mould structure schematic diagram of Fig. 1 freezing nanometer abrasive polishing pad of the present invention.
Fig. 2 is the schematic diagram of freezing nanometer abrasive polishing pad of the present invention.
The specific embodiment
The present invention is further illustrated below in conjunction with drawings and Examples.
As shown in Figure 1, 2.
Embodiment one.
A kind of ultra-thin materials polishing is with the freezing polishing pad of CMP, by the nanometer SiO of 500 grams
2(or nano Ce O
2) 440 water (or concentration is 45 hydrous ethanol) of the additives (it is by polyhydroxy diamines 25 gram alkylol APEOs 20 grams, disodium EDTA 10 grams, carboxymethyl cellulose (CMC) or polyethylene glycol (dispersant) 15 grams) of abrasive material, 70 grams and surplus forms, earlier the three is mixed before using and make it to form the colloidal mixture that abrasive material is in dispersion, suspension, be pressed into again in the polishing pad mould, put into low-temperature test chamber freezing 45 minutes together with mould then, and under 40 degrees below zero, be incubated 15 minutes.Should carry out the demoulding earlier during use, fast it is installed in the use of can starting shooting on the unit head that has cooling device or liquid nitrogen then, adopt this polishing pad processing monocrystalline silicon piece can make surface roughness value reach Ra=2.01nm, improve nearly 14 times than traditional CMP efficient.
Embodiment two.
A kind of ultra-soft material polishing is with the freezing polishing pad of CMP, by the nano Ce O of 100 grams
2(or nanometer SiO
2) additives (it is by polyhydroxy diamines 20 gram, alkylol APEO 20 grams, disodium EDTA 10 grams, carboxymethyl cellulose (CMC) or polyethylene glycol (dispersant) 10 grams) of abrasive material, 60 grams are formed by the ratio of setting and 850 water (or concentration is 32 hydrous ethanol) of surplus is formed, earlier the three is mixed before using and make it to form the colloidal mixture that abrasive material is in dispersion, suspension, be pressed into again in the polishing pad mould, put into low-temperature test chamber freezing 50 minutes together with mould then, and under subzero 30 degree, be incubated 60 minutes.Should carry out the demoulding earlier during use, fast it is installed in the use of can starting shooting on the unit head that has cooling device or liquid nitrogen then.Adopt this polishing pad processing 1mm aluminium sheet can make surface roughness value reach Ra=3.03nm, improve nearly 10 times than traditional CMP efficient.
Embodiment three.
A kind of superhard material polishing freezing polishing pad of CMP, Nano diamond abrasive material (or nanometer Al2O3 abrasive material by 700 grams, the nano SiC abrasive material, nanometer Cr2O3 abrasive material), (it is by polyhydroxy diamines 30 grams for the additive of 80 grams, alkylol APEO 25 grams, disodium EDTA 10 grams, the liquid (or concentration is 90 hydrous ethanol) of carboxymethyl cellulose (CMC) or polyethylene glycol (dispersant) 15 grams and 230 is formed, earlier the three is mixed before using and make it to form abrasive material and be in dispersion, the colloidal mixture of suspension, be pressed into again in the polishing pad mould, put into low-temperature test chamber freezing 35 minutes together with mould then, and under subzero 70 degree, be incubated 30 minutes.Should carry out the demoulding earlier during use, fast it is installed in the use of can starting shooting on the unit head that has cooling device or liquid nitrogen then.Adopt this polishing pad processing CVD diamond thick-film can make surface roughness value reach Ra=4.05nm, improve nearly 12 times than traditional CMP efficient.
Embodiment four.
Present embodiment and embodiment one to three are basic identical, and institute's difference is that the additive that added does not contain the composition with processed object chemically reactive.
Claims (5)
1, a kind of freezing nanometer abrasive polishing pad, it is characterized in that mainly by nanometer abrasive, additive and freezing after play cementation liquid form, wherein abrasive material accounts for 10%～70% of polishing pad gross weight, and additive accounts for 5%～9% of gross weight, the liquid of surplus for finally build-uping ice.
2, freezing nanometer abrasive polishing pad according to claim 1, it is characterized in that described additive or by polyhydroxy diamines, the alkylol APEO, disodium EDTA and carboxymethyl cellulose are formed, or by polyhydroxy diamines, the alkylol APEO, disodium EDTA and polyethylene glycol are formed, their proportion relation is: polyhydroxy diamines accounts for 2%～3% of whole polishing pad weight, the alkylol APEO accounts for 2%～3% of whole polishing pad weight, disodium EDTA accounts for 0.5%～1% of whole polishing pad weight, and carboxymethyl cellulose or polyethylene glycol account for 0.5%～2% of whole polishing pad weight.
3, freezing nanometer abrasive polishing pad according to claim 1 is characterized in that described nanometer abrasive is Al
2O
3, SiC, Cr
2O
3, SiO
2, CeO
2With one or more the combination in the bortz powder.
4, freezing nanometer abrasive polishing pad according to claim 1 is characterized in that the described liquid that finally build-ups ice is water.
5, the preparation method of the described freezing nanometer abrasive polishing pad of a kind of claim 1 is characterized in that may further comprise the steps:
A, at first that proportioning is good nanometer abrasive, additive and liquid agitation are even, obtain abrasive material and are in the liquid state of dispersion, suspension or colloidal state and treat freezing raw material and it is inserted in the mould;
B, then above-mentioned mould is put into freezing equipment, carry out to the condition of subzero 70 degree freezingly subzero 1, treat to treat that freezing raw material is frozen into solid fully and promptly gets the freezing nanometer abrasive polishing pad identical with die shape in the mould.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100411127A CN100425405C (en) | 2006-08-03 | 2006-08-03 | Freezing nanometer abrasive polishing pad and its prepn. method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100411127A CN100425405C (en) | 2006-08-03 | 2006-08-03 | Freezing nanometer abrasive polishing pad and its prepn. method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1903510A CN1903510A (en) | 2007-01-31 |
| CN100425405C true CN100425405C (en) | 2008-10-15 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101774160A (en) * | 2010-03-01 | 2010-07-14 | 南京航空航天大学 | Grainofice-type concretion abrasive polishing pad as well as rapid preparation method and device |
| CN102335888A (en) * | 2010-10-11 | 2012-02-01 | 南京航空航天大学 | Slotting-type freezing and solidifying grinding material polishing pad and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101774160A (en) * | 2010-03-01 | 2010-07-14 | 南京航空航天大学 | Grainofice-type concretion abrasive polishing pad as well as rapid preparation method and device |
| CN102335888A (en) * | 2010-10-11 | 2012-02-01 | 南京航空航天大学 | Slotting-type freezing and solidifying grinding material polishing pad and preparation method thereof |
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|---|---|
| CN1903510A (en) | 2007-01-31 |
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