CN100405468C - Magnetic memory medium and its mfg method - Google Patents
Magnetic memory medium and its mfg method Download PDFInfo
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- CN100405468C CN100405468C CNB031359787A CN03135978A CN100405468C CN 100405468 C CN100405468 C CN 100405468C CN B031359787 A CNB031359787 A CN B031359787A CN 03135978 A CN03135978 A CN 03135978A CN 100405468 C CN100405468 C CN 100405468C
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Abstract
The present invention relates to a magnetic memory medium and the manufacturing method thereof. The magnetic memory medium is composed of a carbon nanometer pipe array and a magnetic material deposited in the micropores of carbon nanometer pipes arranged in an array. The magnetic material presents a columnar body limited by the shape of the carbon nanometer pipe array; therefore, the columnar body has higher vertical anisotropic magnetism and has higher coercive force in the vertical direction, and ultra paramagnetic phenomenon can not occur influenced by temperature variation. The magnetic memory medium of the present invention has higher recording density reaching 6.45*10<13> bit/in<2> and greatly enhance the demand of information for memory density.
Description
[technical field]
The present invention relates to a kind of magnetic storage medium and manufacture method thereof, more specifically, the present invention relates to a kind of high density magnetic storage medium and manufacture method thereof.
[background technology]
Development along with Information technology, requirement to information storage density grows with each passing day, and on limited area, improve its memory capacity, key is to improve the recording density of dielectric material, and classic method is the size that reduces dielectric material, and the numbers of particles that every order information is occupied reaches hundreds of, yet employing the method, the particle size of dielectric material is more little, and it is unstable that its performance then becomes, and produces super-paramagnetic phenomena.And the high density magnetic media material requires medium to have than high magnetic intensity and coercive force.
Be to improve the information storage density of magnetic media material, must searching increase the interior coercive force of medium simultaneously and reduce the method for medium grain size.The making of small size magnetic particle uses methods such as photoetching or self assembly to realize usually.Can expect at present deep UV (ultraviolet light) (DUV) photoetching technique lateral dimension extended to and be about 50 nanometers, but this kind expansion is unreliable and expensive.When size during less than 50 nanometers, can use X-ray lithography technology and EUV lithography technology, but both all need huge fund inputs, present practical difficulty is bigger.
The description of 40～70 nano particle self-assembling methods of being made by latices or other polymkeric substance sees that Micheletto etc. is published in Langmuir 11 3333-3336 (1995), A Simple Method for theProduction of a Two-Dimensional is in Ordered Array of Small Latex Particles one literary composition.5～10 nano-scale semiconductor particles are arranged in order the description of formation and seen that Murray etc. is published in Science 270,1335-1338 (1995) is in Self-Organization of CdSe Nanocrystallites intoThree-Dimensional Quantum Dot Superlattices one literary composition.
The a notification number of IBM Corporation is CN1110797C, and the day for announcing is that the Chinese patent on June 4th, 2003 discloses a kind of dielectric material that is formed by nanometer particle chemistry self-assembling method.This dielectric material is made of all basic nanoscale magnetic particle layer uniformly in diameter that is arranged in substrate surface and interval, described particle has the diameter that is no more than 50 nanometers and includes magnetic material, this magnetic material from the metallic compound, bianry alloy and the ternary alloy three-partalloy that comprise Elements C o, Fe, Ni, Mn, Sm, Nd, Pr, Pt and Gd and these elements, and except that Fe, also comprise the ferriferous oxide of at least a element the aforementioned elements and barium ferrite or strontium ferrite.The area bit density of this dielectric material is 100Gbit/in
2, even near 1000Gbit/in
2
Yet, the magnetic particle of this dielectric material is that the utilization self-assembling method is prepared from, if magnetic particle even particle size tool is uncertain and further reduce the magnetic particle size and can produce super-paramagnetic phenomena, thereby limit the further raising of the storage surface density of this dielectric material.
For the magnetic particle even particle size that solves magnetic medium material in the prior art uncertain, and further reduce the magnetic particle size and can produce super-paramagnetic phenomena, thereby limit the problem of the storage density of this dielectric material, the invention provides the magnetic medium material that a kind of magnetic material form is arranged high-sequential, had higher density.
[summary of the invention]
The object of the present invention is to provide a kind of form of magnetic material to arrange high-sequential, magnetic medium material with higher storage density.
Another object of the present invention is to provide a kind of form of magnetic material to arrange high-sequential, have the magnetic medium preparation methods of higher storage density.
For realizing purpose of the present invention, the invention provides a kind of magnetic storage medium, comprising: a matrix, this matrix has evenly distributed microwell array; One magnetic material, this magnetic material is deposited in the microwell array of matrix, wherein, this matrix is a carbon nano pipe array, the diameter of this carbon nano-tube is 1～5 nanometer, the spacing of adjacent two carbon nano-tube is 2～10 nanometers, and the degree of depth of micropore is 2.5～7.5 nanometers, and this magnetic material is CoCrXYZ, wherein X is tantalum (Ta), niobium (Nb) or zirconium (Zr), Y is platinum (Pt), palladium (Pd) or gold (Au), Z is boron (B), phosphorus (P), nitrogen (N) or oxygen (O), the atomicity number percent of Co is 60～90%, the atomicity number percent of Cr is 5～20%, the atomicity number percent of X is 2～5%, and the atomicity number percent of Y is 5～15%, and the atomicity number percent of Z is 1～15%.
The present invention also provides a kind of method for preparing above-mentioned magnetic storage medium, and it may further comprise the steps:
One carbon nano pipe array is provided, and this matrix has evenly distributed carbon nano-tube microwell array, and the diameter of this carbon nano-tube is 1～5 nanometer, and the spacing of adjacent two carbon nano-tube is 2～10 nanometers, and the degree of depth of micropore is 2.5～7.5 nanometers;
Deposition magnetic material CoCrXYZ in the carbon nano-tube micropore, wherein X is tantalum (Ta), niobium (Nb) or zirconium (Zr), Y is platinum (Pt), palladium (Pd) or gold (Au), Z is boron (B), phosphorus (P), nitrogen (N) or oxygen (O), the atomicity number percent of Co is 60～90%, and the atomicity number percent of Cr is 5～20%, and the atomicity number percent of X is 2～5%, the atomicity number percent of Y is 5～15%, and the atomicity number percent of Z is 1～15%.
Compared with prior art, the magnetic material CoCrXYZ of magnetic storage medium of the present invention is because the restriction of carbon nano pipe array, it arranges high-sequential, has higher vertical incorgruous magnetic, at the higher coercive force of vertical direction tool, thereby the super paramagnetic phenomenon of appearance that can not be acted upon by temperature changes, the memory density of magnetic storage medium material of the present invention is about 6.45 * 10
13Bit/in
2, compare with the memory density of the thin magnetic film that obtains with prior art, greatly improve the recording density of magnetic-based storage media.
[description of drawings]
Fig. 1 is the synoptic diagram that deposits magnetic material in the carbon nano pipe array of magnetic storage medium of the present invention.
Fig. 2 is the vertical view of magnetic storage medium shown in Figure 1.
[embodiment]
See also Fig. 1 and Fig. 2, the selected magnetic storage medium 10 of the present invention comprises: a matrix, and this matrix has evenly distributed microwell array; One magnetic material, this magnetic material is deposited in the microwell array of matrix, wherein, this matrix is a carbon nano pipe array 12,, this magnetic material is CoCrXYZ, wherein X is tantalum (Ta), niobium (Nb) or zirconium (Zr), Y is platinum (Pt), palladium (Pd) or gold (Au), and Z is boron (B), phosphorus (P), nitrogen (N) or oxygen (O).The formation of this carbon nano pipe array 12 can under catalyst action, through the chemical reaction of certain hour, form carbon nano pipe array 12 by carbon-source gas such as feeding methane in reaction chamber.The diameter of this carbon nano-tube is consistent to be 1～5 nanometer, is preferably tight distribution between 1～3 carbon nano tube, and spacing is 2～10 nanometers, and better spacing is that the degree of depth of each carbon nano-tube of this carbon nano pipe array 12 of 2～5 nanometers is 2.5～7.5 nanometers.Carbon nano pipe array 12 is column, is evenly distributed and arranges in order, and is separate between the carbon nano-tube, so interlaced phenomenon can not take place because of the inclination of micropore.The formation method of this carbon nano pipe array comprises: thermal chemical vapor deposition method, electricity slurry strengthen chemical vapour deposition technique.
After carbon nano pipe array 12 forms, magnetic material CoCrXYZ is deposited in the micropore of carbon nano-tube of arrayed, wherein X is tantalum (Ta), niobium (Nb) or zirconium (Zr), Y is platinum (Pt), palladium (Pd) or gold (Au), Z is boron (B), phosphorus (P), nitrogen (N) or oxygen (O), the atomicity number percent of Co is 60～90%, the atomicity number percent of Cr is 5～20%, the atomicity number percent of X is 2～5%, the atomicity number percent of Y is 5～15%, the atomicity number percent of Z is 1～15%, in the present invention, at first magnetic material CoCrXYZ is made film, then carbon nano pipe array 12 is placed its right opposite, with argon gas electricity slurry bombardment CoCrXYZ film target, CoCrXYZ will be deposited in the carbon nano-tube micropore again.The deposition process of this magnetic material CoCrXYZ also can adopt sputtering method, ion beam depositing method (ion-beam deposition), thermojet method, physical vaporous deposition, nano print method or ionic-implantation.
After the CoCrXYZ deposition is finished,, remove the CoCrXYZ that makes carbon nano pipe array 12 surface portions with hydrofluoric acid clean carbon nano pipe array 12 surfaces.The CoCrXYZ that amass in carbon nano-tube in Shen is subjected to the shape restriction of carbon nano-tube to form a column 14.The diameter of column 14 only is 1～5 nanometer because of being subjected to the restriction of carbon nano-tube diameter, so this column 14 has higher vertical incorgruous magnetic, at the higher coercive force of vertical direction tool, 8000～20, between 000 Qe, thereby the super paramagnetic phenomenon of appearance that can not be acted upon by temperature changes.
Magnetic-based storage media material of the present invention, its column 14 preferred diameters are 1～3 nanometer, and the spacing preferred distance is 2～5 nanometers, and the information density of being remembered is if with 1 magnetic particle/bit representation, remember density and be about 6.45 * 10
13Bit/in
2, with the memory density 10 of the thin magnetic film that obtains with prior art
9～10
10Bit/in
2Compare, greatly improve the recording density of magnetic-based storage media.
Claims (10)
1. magnetic storage medium comprises: a matrix, and this matrix has evenly distributed microwell array; One magnetic material, this magnetic material is deposited in the microwell array of matrix, it is characterized in that, this matrix is a carbon nano pipe array, this magnetic material is CoCrXYZ, wherein X is tantalum (Ta), niobium (Nb) or zirconium (Zr), and Y is platinum (Pt), palladium (Pd) or gold (Au), and Z is boron (B), phosphorus (P), nitrogen (N) or oxygen (O).
2. magnetic storage medium as claimed in claim 1, the atomicity number percent that it is characterized in that Co among this magnetic material CoCrXYZ is 60～90%, the atomicity number percent of Cr is 5～20%, the atomicity number percent of X is 2～5%, the atomicity number percent of Y is 5～15%, and the atomicity number percent of Z is 1～15%.
3. magnetic storage medium as claimed in claim 1, the degree of depth that it is characterized in that this micropore is 2.5～7.5 nanometers.
4. magnetic storage medium as claimed in claim 1, the diameter that it is characterized in that this carbon nano-tube is 1～5 nanometer.
5. magnetic storage medium as claimed in claim 1 is characterized in that distance is 2～10 nanometers between this carbon nano-tube.
6. method for preparing magnetic storage medium, it may further comprise the steps:
One carbon nano-tube matrix is provided, and this matrix has evenly distributed carbon nano-tube microwell array;
Deposition magnetic material CoCrXYZ in the carbon nano-tube micropore, wherein X is tantalum (Ta), niobium (Nb) or zirconium (Zr), and Y is platinum (Pt), palladium (Pd) or gold (Au), and Z is boron (B), phosphorus (P), nitrogen (N) or oxygen (O).
7. the method for preparing magnetic storage medium as claimed in claim 6, the diameter that it is characterized in that this carbon nano-tube is 1～5 nanometer, and the spacing of adjacent two carbon nano-tube is 2～10 nanometers, and the degree of depth of micropore is 2.5～7.5 nanometers.
8. the method for preparing magnetic storage medium as claimed in claim 6, the atomicity number percent that it is characterized in that Co among this magnetic material CoCrXYZ is 60～90%, the atomicity number percent of Cr is 5～20%, the atomicity number percent of X is 2～5%, the atomicity number percent of Y is 5～15%, and the atomicity number percent of Z is 1～15%.
9. the method for preparing magnetic storage medium as claimed in claim 6 is characterized in that the method that deposits magnetic material CoCrXYZ comprises: sputtering method, ion beam depositing method, thermojet method, physical vaporous deposition, nano print method or ionic-implantation.
10. the method for preparing magnetic storage medium as claimed in claim 6 is characterized in that the preparation method of carbon nano pipe array comprises: thermal chemical vapor deposition method, the electricity slurry strengthens chemical vapour deposition technique.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB031359787A CN100405468C (en) | 2003-09-26 | 2003-09-26 | Magnetic memory medium and its mfg method |
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|---|---|---|---|
| CNB031359787A CN100405468C (en) | 2003-09-26 | 2003-09-26 | Magnetic memory medium and its mfg method |
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| CN1601613A CN1601613A (en) | 2005-03-30 |
| CN100405468C true CN100405468C (en) | 2008-07-23 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100412951C (en) * | 2005-05-13 | 2008-08-20 | 鸿富锦精密工业（深圳）有限公司 | Magnetic recording medium and making method thereof |
| CN100426383C (en) * | 2005-09-02 | 2008-10-15 | 鸿富锦精密工业（深圳）有限公司 | Magnetic recording medium and method for manufacturing same |
| KR100914931B1 (en) * | 2006-12-08 | 2009-08-31 | 삼성전자주식회사 | Magnetic recording medium and method of fabricating the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07278764A (en) * | 1994-04-15 | 1995-10-24 | Hitachi Metals Ltd | Nano-crystal alloy and its production and magnetic core using the same |
| JPH0867911A (en) * | 1994-08-30 | 1996-03-12 | Hitachi Metals Ltd | Method for heat-treating nano-crystalline magnetic alloy |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07278764A (en) * | 1994-04-15 | 1995-10-24 | Hitachi Metals Ltd | Nano-crystal alloy and its production and magnetic core using the same |
| JPH0867911A (en) * | 1994-08-30 | 1996-03-12 | Hitachi Metals Ltd | Method for heat-treating nano-crystalline magnetic alloy |
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| CN1601613A (en) | 2005-03-30 |
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