CN100399546C - Manufacturing method of quickflashing memory device - Google Patents
Manufacturing method of quickflashing memory device Download PDFInfo
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- CN100399546C CN100399546C CNB2005100819216A CN200510081921A CN100399546C CN 100399546 C CN100399546 C CN 100399546C CN B2005100819216 A CNB2005100819216 A CN B2005100819216A CN 200510081921 A CN200510081921 A CN 200510081921A CN 100399546 C CN100399546 C CN 100399546C
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- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 39
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 37
- 229920005591 polysilicon Polymers 0.000 claims abstract description 37
- 150000002500 ions Chemical class 0.000 claims abstract description 32
- 230000003647 oxidation Effects 0.000 claims abstract description 32
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 32
- 238000007667 floating Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims abstract 5
- 239000011229 interlayer Substances 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 40
- 150000004767 nitrides Chemical class 0.000 claims description 14
- 238000004140 cleaning Methods 0.000 claims description 12
- 238000005516 engineering process Methods 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- KHYBPSFKEHXSLX-UHFFFAOYSA-N iminotitanium Chemical compound [Ti]=N KHYBPSFKEHXSLX-UHFFFAOYSA-N 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910001000 nickel titanium Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 2
- 238000000231 atomic layer deposition Methods 0.000 claims 1
- 229930002839 ionone Natural products 0.000 claims 1
- 150000002499 ionone derivatives Chemical class 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 6
- 238000006731 degradation reaction Methods 0.000 abstract description 6
- 239000012535 impurity Substances 0.000 abstract description 6
- 238000007789 sealing Methods 0.000 description 9
- 230000001351 cycling effect Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 3
- 229910021342 tungsten silicide Inorganic materials 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- GOLXNESZZPUPJE-UHFFFAOYSA-N spiromesifen Chemical compound CC1=CC(C)=CC(C)=C1C(C(O1)=O)=C(OC(=O)CC(C)(C)C)C11CCCC1 GOLXNESZZPUPJE-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- -1 tungsten nitride Chemical class 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
One flash memory manufacturing process is disclosed, which includes the following steps: forming stacked grid layer with a stacked tunnel dielectric film, a floating grid pattern of polysilicon fim, an interlayer dielectric film, a control grid pattern of polysilicon fim and a metal film in one area of the semiconductor substrate; implanting impurity ions into the semiconductor substrate beside the stacked grid layer; and forming one catastrophic oxidation resisting film covering the whole stacked grid layer. The flash memory has improved endurance characteristic and no degradation in antijamming characteristic.
Description
Technical field
The present invention relates to a kind of in order to make the method for flash memory devices, and more specifically, the present invention relates to the method for the manufacturing flash memory devices of a kind of cycling durable power (Cycling endurance) characteristic of wherein having improved flash memory devices (meaning is promptly deleted/write (E/W) cycle characteristics).
Background technology
Even having, the flash memory devices of semiconductor storage when removing power supply, is stored in the performance that the information in the memory cell is not also lost.Therefore, flash memory devices has been widely used in the computer used storage card and analog thereof.
As the unit cell of flash memory devices, it is extensively known having a memory cell of structure of wherein piling up the conducting film of the conducting film of floating grid and control grid in a sequential manner.Polysilicon is widely used as the conducting film of floating grid and the conducting film of control grid.More particular words it, polysilicon film and tungsten silicide (WSi
x) dual structure usually as control grid conducting film.
Yet along with the integrated level (integration level) of flash memory devices increases, the problem of existence is: the resistance in polysilicon film structure and the tungsten silicide film structure becomes high.
Therefore, proposed a kind of metal gate structure, in this metal gate structure, the reaction barrier layer that forms such as tungsten nitride film (WN) replaces tungsten silicide film (WSi
x), and on this tungsten nitride film, form metal electrode film such as tungsten (W) film.
Polysilicon film, reaction barrier layer and metal electrode film by the polysilicon film that on semi-conductive substrate, sequentially piles up tunnel dielectric film, floating grid, interlevel dielectric film, control grid, and, make flash memory devices with this metal gate structure subsequently by this polysilicon film of this polysilicon film, this interlevel dielectric film and floating grid of this metal electrode film of photoetching process composition, this reaction barrier layer, control grid.
When this metal gates of composition, produce etch damage.For alleviating these etch damages, carry out selective oxidation processes, and comprising that forming the sealing nitride film on the whole surface of this metal gates makes that this metal electrode film is not oxidized.
The film formed reason of sealing nitride is as described below.If in thermal process subsequently (meaning promptly contains the Technology for Heating Processing of oxide material), in the metal electrode film, produce abnormal oxidation, then cause a problem owing to having polluted apparatus cavity.In addition, the cross section of the metal electrode film that exposes to the open air is owing to oxidation reduces, thereby causes the increase of resistance.Therefore signal transmission delay time is owing to the resistance of the word line of unit increases.The quality degradation that this causes comprehensive reduction of reading speed and therefore makes product.Therefore, for preventing these problems, form the sealing nitride film.
Then, for forming source/drain junctions, carry out on semi-conductive substrate and inject (knot) technology, meaning promptly is used as metal gates the impure ion injection technology of mask.Carry out subsequently and be used to activate the Technology for Heating Processing of the foreign ion that is injected to form this source/drain junctions.
Fig. 1 one shows the chart of the cycling durable force characteristic of the foreign ion dosage depend on the source/drain junctions that is used for existing flash memory cell.
Carry out the result as seen from the E/W of Fig. 1 100K circulation, along with circulation increases, the threshold voltage of generation unit changes suddenly, and meaning has promptly seriously reduced the circulation time limit (Cycling window).
From the viewpoint of the characteristic of flash memory cell, it should have the endurance characteristic that can bear the 100K circulation.From Fig. 1 as seen, can not in the unit of making by existing technology, reach the endurance characteristic.
Simultaneously, can improve the E/W cycle characteristics by the amount that increases unit knot implantation dosage.Yet this is very ineffective.In addition, if being used for the dosage of the foreign ion of source/drain junctions increases, then the problem of Cun Zaiing is: leakage current is because the drain electrode of gate induced reduces (gate-induced drain lowering, GIDL) effect and increasing, and therefore make the program disturb performance degradation.In view of the above, can not arbitrarily increase the foreign ion dosage that is used for source/drain junctions to improve the endurance characteristic.
The reason that the endurance characteristic reduces in the existing flash memory cell can comprise two kinds of main types.
The first, intrinsic tensile stress influences the parallel diffusion of silicon face with foreign ion arsenic (As), phosphorus (P) or the boron (B) of forbidding source/drain junctions in the sealing nitride film.Because the overlapping insufficient event cell current between source/drain junctions and the grid reduces, therefore expectation increases threshold voltage.
This can be able to the improved fact by the increase of unit knot implantation dosage from the E/W cycle characteristics and find out indirectly from Fig. 1.
The second, there is the problem that seals the intrinsic material of nitride film itself.Usually, the nitride film that is injected serves as the capture source.Therefore expection produces many trapped charge.
Yet, consider the cycle characteristics of sealing nitride film do not have significant difference aspect the endurance characteristic between nitride film and the oxidation film from the viewpoint of non-injection metal gates.Therefore, under this situation, there is not remarkable effect.Therefore need not inject the sealing nitride film.
Summary of the invention
Therefore, the present invention addresses the above problem, and discloses and a kind ofly wherein can improve the endurance characteristic and do not make the method for the manufacturing flash memory devices of program disturb characteristic degradation.
For realizing this purpose, the invention provides a kind of method of making flash memory devices, it may further comprise the steps: form one and pile up grid on a zone of semi-conductive substrate, in this piled grids, pile up polysilicon film pattern, and the metal film of polysilicon film pattern, interlevel dielectric film, the control grid of tunnel dielectric film, floating grid; This Semiconductor substrate is injected with foreign ion by place, both sides at this piled grids; And comprising formation one anti-abnormal oxidation film on the whole surface of this piled grids.
Can form piled grids by following steps: the polysilicon film, and the metal film that on Semiconductor substrate, in turn pile up polysilicon film, interlevel dielectric film, the control grid of tunnel dielectric film, floating grid; And optionally this metal film of etching, control grid this polysilicon film, interlevel dielectric film, and this polysilicon film of floating grid make them remain on this zone.
This method can further be included in the step that forms a rigid screened film on this metal film.
Preferably form this metal film by piling up a reaction barrier layer and a metal electrode film.
Among preferred use Wn, TaN, TiN and the MoN one forms this reaction barrier layer.
Among preferred use W, Co, Ti, Mo, Ru-Ta, Ni-Ti and the Ta-Pt one forms this metal electrode film.
This method can further may further comprise the steps: after forming piled grids, come partly to go up in the side direction of the polysilicon film pattern of the polysilicon film pattern of floating grid and control grid by the selective oxidation processes in order to the oxidation of forbidding metal film and form the monoxide film.
Foreign ion can adopt one in phosphorus (P) and the arsenic (As).
Foreign ion can adopt boron (B).
When implanting impurity ion, ion implantation energy is preferably 10 to 50KeV, and ion implantation dosage is preferably 5E12 to 5E13[ions/cm
2].
When implanting impurity ion, inclination angle (tilt angle) is preferably 0 to 10 degree.
This method can further be included in the step that implanting impurity ion is carried out cleaning afterwards.
In cleaning, can use and contain H
2SO
4, H
2O
2And NH
4The cleaning solution of OH.
Can use sealing nitride film or ALD oxidation film to form anti-abnormal oxidation film.
The ALD oxidation film is preferably the SiO that forms by the ALD method
2Film.
Can use one among SiN and the SiON to form the sealing nitride film.
The thickness of anti-abnormal oxidation film is preferably 50 to 300 dusts.
This method can further be included in and form the step of carrying out the Technology for Heating Processing that is used to activate the foreign ion that is injected after the anti-abnormal oxidation film.
Description of drawings
Fig. 1 is the chart that the cycling durable force characteristic of the foreign ion dosage that has flash memory cell now is depended in a displaying;
Fig. 2 A to 2B is the cross-sectional view of explanation in order to the processing step in the exemplary methods of making flash memory devices; And
Fig. 3 is the chart of a displaying according to the cycling durable force characteristic of exemplary flash memory devices of the present invention.
Description of reference numerals
10 Semiconductor substrate
11 tunnel dielectric films
12 polysilicon film pattern
13 interlevel dielectric films
14 polysilicon film pattern
15 metal films
16 rigid screened films
17 anti-abnormal oxidation films
18 source/drain junctions
Embodiment
Each embodiment is described with reference to the accompanying drawings.Those skilled in the art will understand, and can revise the disclosed embodiments in every way and category of the present invention is not limited by the examples.
Fig. 2 A to 2B is the cross-sectional view of explanation in order to the processing step in the exemplary methods of making flash memory devices.
On Semiconductor substrate 10, sequentially form the polysilicon film, interlevel dielectric film 13 of tunnel dielectric film 11, floating grid, polysilicon film, metal film 15 and the rigid screened film 16 of control grid.Metal film 15 can preferably adopt the stacked film of reaction barrier layer and metal electrode film.
Can use one among (for example) WN, TaN, TiN and the MoN to form the reaction barrier layer.Can use one among W, Co, Ti, Mo, Ru-Ta, Ni-Ti, TiN and the Ta-Pt to form the metal electrode film.
Shown in Fig. 2 A, polysilicon film, interlevel dielectric film 13 by the rigid screened film 16 of photoetching process etching sequentially, metal film 15, control grid, and the polysilicon film of floating grid, thereby form piled grids with stacked film, this stacked film is made up of polysilicon film pattern 14, metal film 15 and the rigid screened film 16 of the polysilicon film pattern 12 of the floating grid on the zone that is positioned at Semiconductor substrate 10, interlevel dielectric film 13, control grid, and wherein tunnel dielectric film 11 is formed in this zone of Semiconductor substrate 10.
Though be not showed in the accompanying drawing, can by execution be used to forbid metal film 15 oxidation selective oxidation processes and partly go up in the side direction of the polysilicon film pattern 14 of the polysilicon film pattern 12 of floating grid and control grid and to form silicon oxide film (SiO
2), to alleviate the etch damage when forming piled grids.
Subsequently, photoresist is coated on the whole surface.By exposure and developing process and after exposing the unit area to the open air, implanting impurity ion is to form the unit knot.
About foreign ion, phosphorus (P) or arsenic (As) can be used as n type source, and can be with boron (B) as p type source.
When implanting impurity ion, ion implantation energy be 10 to 50KeV and the dosage that injects of ion be 5E12 to 5E13[ions/cm
2].In addition, when injecting ion, the inclination angle is 0 to 10 degree.
Remove photoresist subsequently and carry out cleaning.
Only use in the cleaning solution that in cleaning, uses and contain H
2SO
4, H
2O
2And NH
4The cleaning solution of OH.More particular words it, do not comprise the cleaning solution that is used to remove oxidation film in this cleaning solution, so that in selective oxidation processes, do not remove the silicon oxide film (SiO on the side direction part of polysilicon film pattern 14 of the polysilicon film pattern 12 that is formed at floating grid and control grid such as buffer oxide etch agent (BOE) or HF
2).
After this, shown in Fig. 2 B, for preventing the abnormal oxidation of metal film 15 in containing the Technology for Heating Processing of oxide material subsequently, form anti-abnormal oxidation film 17 on the whole surface of piled grids comprising.
Can use such as the sealing nitride film of SiN or SiON or the silicon oxide film (SiO that deposits by ald (ALD) method
2) form anti-abnormal oxidation film 17.Anti-abnormal oxidation film 17 can form the thickness of 50 to 300 dusts.
After this, activate the foreign ion that is injected and make its diffusion, thereby form source/drain junctions 18 by Technology for Heating Processing.
Finish manufacturing by this according to flash memory devices of the present invention.
Fig. 3 is the chart of a displaying E/W cycle characteristics, and meaning is the chart of the endurance characteristic of exemplary flash memory devices.
From Fig. 3 as seen, along with E/W 100K circulation is proceeded, compare with existing flash memory devices shown in Figure 1, threshold voltage changes significantly and reduces.
After the source/drain junctions ion implantation technology, form anti-abnormal oxidation film.This anti-abnormal oxidation film can prevent from wherein to forbid the phenomenon of the parallel diffusion of foreign ion.Therefore can guarantee fully overlapping between grid and the source/drain junctions.Therefore, can prevent the problem that threshold voltage increases owing to the overlapping deficiency between grid and the source/drain junctions.This can solve the problem that makes cycling durable force characteristic degradation that is caused by the threshold voltage increase.
Next, even can under the situation that need not increase foreign ion dosage, solve endurance characteristic degradation problem.Therefore needn't reduce interference characteristic to improve the endurance characteristic.
Though carried out previous description referring to preferred embodiment, should be appreciated that those skilled in the art can change the present invention and revise under the situation of spirit that does not depart from the present invention and claims and category.
The application requires in the rights and interests of the 2005-20227 korean patent application of submission on March 10th, 2005 its disclosed full text to be done with reference to quoting at this.
Claims (18)
1. method that is used to make a flash memory devices may further comprise the steps:
On a zone of semi-conductive substrate, form one and pile up grid, in this piled grids, pile up polysilicon film pattern, an and metal film that polysilicon film pattern, an interlayer dielectric film, that a tunnel dielectric film, is used for a floating grid are used for a control grid;
One foreign ion is infused in this Semiconductor substrate at both sides places of this piled grids; And
Comprising formation one anti-abnormal oxidation film on the whole surface of this piled grids.
2. the method for claim 1, wherein by on this Semiconductor substrate, sequentially pile up this tunnel dielectric film, this is used for polysilicon film, this interlevel dielectric film, this polysilicon film that is used for this control grid, and this metal film of this floating grid, and optionally this metal film of etching, this polysilicon film, this interlevel dielectric film and this polysilicon film that is used for this floating grid that is used for this control grid make them remain in described zone, form this piled grids.
3. method as claimed in claim 2 further is included in the step that forms a rigid screened film on this metal film.
4. the method for claim 1 wherein forms this metal film by piling up a reaction barrier layer and a metal electrode film.
5. method as claimed in claim 4 wherein uses one among WN, TaN, TiN and the MoN to form this reaction barrier layer.
6. method as claimed in claim 4 one of wherein uses among W, Co, Ti, Mo, Ru-Ta, Ni-Ti and the Ta-Pt person to form this metal electrode film.
7. the method for claim 1, further be included in and form after this piled grids, by a selective oxidation processes in order to the oxidation of forbidding this metal film, and be used for the polysilicon film pattern of this floating grid and the side direction of this polysilicon film pattern that is used for this control grid partly goes up the step that forms the monoxide film in this.
8. the method for claim 1, wherein this foreign ion one of adopts in phosphorus and the arsenic person.
9. the method for claim 1, wherein this foreign ion adopts boron.
10. the method for claim 1, wherein when injecting this foreign ion, ion implantation energy is 10 to 50KeV, and ion implantation dosage is every square centimeter in 5E12 to a 5E13 ion.
11. the method for claim 1, wherein when injecting this foreign ion, an inclination angle is 0 to 10 degree.
12. the method for claim 1 further is included in and injects the step that this foreign ion is carried out a cleaning afterwards.
13. method as claimed in claim 12 wherein in this cleaning, uses one to contain H
2SO
4, H
2O
2And NH
4The cleaning solution of OH.
14. the method for claim 1 wherein uses a nitride film that is used to seal or an ald oxidation film to form this anti-abnormal oxidation film.
15. method as claimed in claim 14, wherein this ald oxidation film is a SiO by Atomic layer deposition method formation
2Film.
16. method as claimed in claim 14 one of is wherein used among SiN and the SiON to form the nitride film that this is used to seal.
17. the method for claim 1, wherein a thickness of this anti-abnormal oxidation film is 50 to 300 dusts.
18. the method for claim 1 further is included in to form and carries out a step of Technology for Heating Processing that is used to activate the foreign ion of this injection after this anti-abnormal oxidation film.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050020227A KR100635201B1 (en) | 2005-03-10 | 2005-03-10 | Method for fabricating flash memory device |
| KR20227/05 | 2005-03-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1832145A CN1832145A (en) | 2006-09-13 |
| CN100399546C true CN100399546C (en) | 2008-07-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100819216A Expired - Fee Related CN100399546C (en) | 2005-03-10 | 2005-07-06 | Manufacturing method of quickflashing memory device |
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| Country | Link |
|---|---|
| JP (1) | JP2006253622A (en) |
| KR (1) | KR100635201B1 (en) |
| CN (1) | CN100399546C (en) |
| TW (1) | TWI306647B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100953050B1 (en) * | 2007-10-10 | 2010-04-14 | 주식회사 하이닉스반도체 | Nonvolatile memory device and method of manufacturing the same |
| CN101635278B (en) * | 2008-07-22 | 2011-11-30 | 中芯国际集成电路制造(上海)有限公司 | Ion doping method for memory cell in DRAM |
| KR102031174B1 (en) | 2012-11-16 | 2019-10-11 | 삼성전자주식회사 | Semiconductor device and method of manufacturing the same and apparatus for processing a substrate |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1170959A (en) * | 1996-06-29 | 1998-01-21 | 现代电子产业株式会社 | Method of forming floating gate in flash memory device |
| CN1239827A (en) * | 1998-06-24 | 1999-12-29 | 世大积体电路股份有限公司 | Manufacture of flash memory unit |
| US6153906A (en) * | 1998-12-08 | 2000-11-28 | United Microelectronics Corp. | Flash memory |
| US6288419B1 (en) * | 1999-07-09 | 2001-09-11 | Micron Technology, Inc. | Low resistance gate flash memory |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000311992A (en) * | 1999-04-26 | 2000-11-07 | Toshiba Corp | Nonvolatile semiconductor memory device and manufacture thereof |
| JP4819215B2 (en) * | 2000-07-24 | 2011-11-24 | ルネサスエレクトロニクス株式会社 | Nonvolatile semiconductor memory device and manufacturing method thereof |
| US7049187B2 (en) * | 2001-03-12 | 2006-05-23 | Renesas Technology Corp. | Manufacturing method of polymetal gate electrode |
| KR100414562B1 (en) * | 2001-06-29 | 2004-01-07 | 주식회사 하이닉스반도체 | Method of manufacturing a nonvolatile memory cell |
| JP4540899B2 (en) * | 2001-09-13 | 2010-09-08 | パナソニック株式会社 | Manufacturing method of semiconductor device |
-
2005
- 2005-03-10 KR KR1020050020227A patent/KR100635201B1/en not_active IP Right Cessation
- 2005-06-03 JP JP2005164503A patent/JP2006253622A/en active Pending
- 2005-06-21 TW TW094120676A patent/TWI306647B/en not_active IP Right Cessation
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1170959A (en) * | 1996-06-29 | 1998-01-21 | 现代电子产业株式会社 | Method of forming floating gate in flash memory device |
| CN1239827A (en) * | 1998-06-24 | 1999-12-29 | 世大积体电路股份有限公司 | Manufacture of flash memory unit |
| US6153906A (en) * | 1998-12-08 | 2000-11-28 | United Microelectronics Corp. | Flash memory |
| US6288419B1 (en) * | 1999-07-09 | 2001-09-11 | Micron Technology, Inc. | Low resistance gate flash memory |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI306647B (en) | 2009-02-21 |
| KR20060099171A (en) | 2006-09-19 |
| CN1832145A (en) | 2006-09-13 |
| KR100635201B1 (en) | 2006-10-16 |
| JP2006253622A (en) | 2006-09-21 |
| TW200633143A (en) | 2006-09-16 |
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