CN100371977C - Organic luminous diode display device drived by current mode and picture element structure thereof - Google Patents
Organic luminous diode display device drived by current mode and picture element structure thereof Download PDFInfo
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- CN100371977C CN100371977C CNB2004100950602A CN200410095060A CN100371977C CN 100371977 C CN100371977 C CN 100371977C CN B2004100950602 A CNB2004100950602 A CN B2004100950602A CN 200410095060 A CN200410095060 A CN 200410095060A CN 100371977 C CN100371977 C CN 100371977C
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Abstract
The present invention relates to a display device which comprises a light emitting element, a first scan line, a data line, a first transistor and a current mirror circuit, wherein the first scan line is used for transmitting a first signal to select the light emitting element; the data line is used for transmitting a data current signal to drive the light emitting element; the first transistor is provided with a grid electrode which is coupled to the first scan line, and is used for selecting the light emitting element according to the first signal; the current mirror circuit is used for transmitting a driving current signal to drive the light emitting element according to the data current signal, and the current mirror circuit comprises a second transistor and a third transistor. The second transistor is provided with a grid electrode which is coupled to the data line and one end of a source electrode and a drain electrode of the first transistor, and the second transistor is used for receiving the data current signal. The third transistor is provided with a grid electrode which is coupled to the other end of the source electrode and the drain electrode of the first transistor, and the third transistor is used for transmitting the driving current signal.
Description
Technical field
The invention provides a kind of display panel and dot structure thereof, refer to a kind of organic LED display device and dot structure thereof that drives with current system especially.
Background technology
See also the 1st figure, the 1st figure is existing synoptic diagram with a pixel 10 in the organic LED display device of voltage system driving.Shown in the 1st figure, pixel 10 includes sweep trace (scan line) SL, data line (data line) DL, thin film transistor (TFT) (thin-film transistor, TFT) M1, thin film transistor (TFT) M2, electric capacity reservoir part C and Organic Light Emitting Diode (organic light emittingdiode) OLED, wherein shown in the 1st figure, the grid of thin film transistor (TFT) M1 (gate) is to be connected to sweep trace SL, drain electrode (drain) is connected to data line DL, and source electrode (source) is to be connected to the grid of thin film transistor (TFT) M2 and the end of electric capacity reservoir part C.The drain electrode system of thin film transistor (TFT) M2 is connected to the end of Organic Light Emitting Diode OLED, and its source electrode then is connected to the other end and the voltage source V dd of electric capacity reservoir part C.In addition, the other end of Organic Light Emitting Diode OLED system is connected to another voltage source V ss.
The operating mode of pixel 10 is as described below: at first, gate driver circuit (not being shown in the 1st figure) driven sweep line SL by the outside, and give sweep trace SL one predetermined voltage, this predetermined voltage system transfers to the grid of thin film transistor (TFT) M1 via sweep trace SL, at this, thin film transistor (TFT) M1 system uses as a switch, and therefore, thin film transistor (TFT) M1 just can be unlocked.In addition, therefore the entrained information of voltage of data line DL also is passed to the grid of thin film transistor (TFT) M2 and the end of electric capacity reservoir part C by transistor M1, note that at this entrained information of voltage system of data line DL is set according to the video data (for example GTG value of desire demonstration) of 10 desires demonstrations of pixel by the data drive circuit (not shown) of outside.
Then, because above-mentioned information of voltage system is used for the grid voltage of control TFT M2, therefore thin film transistor (TFT) M2 just can decide the electric current I by thin film transistor (TFT) M2 according to the size of above-mentioned information of voltage, on the other hand, because the luminance brightness that Organic Light Emitting Diode OLED is sent is proportional to the electric current that it flows through, therefore Organic Light Emitting Diode OLED can send corresponding light because of the size of electric current I, so just finishes the driving of pixel 10.
Shown in the 1st figure, electric capacity reservoir part C is used for storing previously mentioned information of voltage, when this information of voltage passes over via thin film transistor (TFT) M1, this information of voltage is except as the grid voltage of thin film transistor (TFT) M2 and the conducting membrane transistor M2, also can influence the stored electric charge of electric capacity reservoir part C simultaneously, so, behind the corresponding above-mentioned information of voltage of current potential that a end that electric capacity reservoir part C and thin film transistor (TFT) M1 connect is kept, gate driver circuit and data drive circuit just can stop to drive pixel 10, continue drive thin film transistors M2 and change into by the stored information of voltage of electric capacity reservoir part C, and therefore electric capacity reservoir part C can keep required electric current I in a schedule time, and owing to utilize electric capacity reservoir part C to come drive thin film transistors M2, the noise of data line DL just can not cause interference to thin film transistor (TFT) M2, therefore the light intensity that Organic Light Emitting Diode OLED is sent is very stable and interference-free, and on behalf of the GTG value of pixel 10, this also stably to export.
Yet, because the error of thin film transistor (TFT) M2 on processing procedure, for example the distance error of the concentration error of doping (doping) or substrate (substrate) and grid all may cause the error of thin film transistor (TFT) M2 critical voltage (threshold voltage), the error of mobility (mobility) also or among the thin film transistor (TFT) M2, such fabrication errors just can directly have influence on the size of electric current I, even so identical information of voltage, drive the electric current I of different pixels and inequality, so just caused the inhomogeneous of brightness between the different pixels.
Summary of the invention
Therefore one of fundamental purpose of the present invention is to provide a kind of organic LED display device and dot structure thereof that drives with current system, to solve the uneven problem of pixel intensity in the prior art.
According to claim of the present invention, it is to disclose a kind of display device.This display device includes: light-emitting component; First sweep trace is used to transmit first signal to choose this light-emitting component; Data line is used for transmitting the data current signal to drive this light-emitting component; The first transistor, its grid are coupled to this first sweep trace, and this first transistor system chooses this light-emitting component with this first signal; And current mirroring circuit, be electrically connected at this light-emitting component, be used for driving this light-emitting component to transmit a driving current signal according to this data current signal, this current mirroring circuit includes: transistor seconds, end one of in the source electrode (source) that its grid (gate) is coupled to this data line and this first transistor and the drain electrode (drain), this transistor seconds system is used to receive this data current signal; And the 3rd transistor, its grid system is coupled to the source electrode of this first transistor and the other end in the drain electrode, and the 3rd crystal piping is used to transmit this driving current signal.
In addition, the present invention discloses a kind of dot structure in addition, comprises: light-emitting component; First sweep trace is used to transmit first signal; Data line is used to transmit the data current signal; The first transistor has grid and is coupled to this first sweep trace; Current mirroring circuit is electrically connected at this light-emitting component, and this current mirroring circuit includes: transistor seconds has grid (gate) and is connected to the source electrode (source) of this data line and this first transistor and the end in the drain electrode (drain); The 3rd transistor has a grid and is coupled to the source electrode of this first transistor and the other end in the drain electrode; Second sweep trace is used to transmit secondary signal; And the 4th transistor, have grid and be coupled to this second sweep trace, and the end system in source electrode and the drain electrode is electrically connected to the drain electrode of this transistor seconds, and the other end in source electrode and the drain electrode is to be electrically connected to this transistor seconds grid and this data line.
And the present invention discloses a kind of dot structure in addition, has light emitting diode and electric capacity reservoir part, comprising: voltage source; The first transistor has grid and is coupled to the one scan line; Transistor seconds has grid and is electrically connected to data line and is coupled to the source electrode of this first transistor and the end in the drain electrode; The 3rd transistor, have grid and be coupled to the source electrode of this first transistor and the other end in the drain electrode, and the end in the source electrode of the 3rd transistor and the drain electrode is coupled to this light emitting diode, and the other end in the 3rd transistorized source electrode and the drain electrode is coupled to this voltage source; The 4th transistor has grid and is coupled to this sweep trace, and the end in the 4th transistorized source electrode and the drain electrode is coupled to this data line; Wherein, the other end in the 4th transistorized source electrode and the drain electrode is coupled to the source electrode of this transistor seconds and the end in the drain electrode, and the grid of this transistor seconds is to be coupled to the 3rd transistorized grid by this first transistor to be used to form current mirroring circuit.
The disclosed pixel of the present invention utilizes the principle of current drives to have better pixel uniformity coefficient compared with existing driven panel pixels, and the GTG brightness that can stably keep desire to show.
Description of drawings
The 1st figure is existing synoptic diagram with the pixel in the organic LED display device of voltage system driving.
The 2nd figure is the synoptic diagram of the present invention with first embodiment of the pixel in the organic LED display device of current system driving.
The 3rd figure is the process flow diagram that drives the pixel shown in the 2nd figure.
The 4th figure is the synoptic diagram of second embodiment of the pixel shown in the 2nd figure.
The 5th figure is the synoptic diagram of the 3rd embodiment of the pixel shown in the 2nd figure.
The 6th figure is the synoptic diagram of the 4th embodiment of the pixel shown in the 2nd figure.
The 7th figure is the synoptic diagram of the 5th embodiment of the pixel shown in the 2nd figure.
The 8th figure is the synoptic diagram of the 6th embodiment of the pixel shown in the 2nd figure.
The 9th figure is the synoptic diagram of the 7th embodiment of the pixel shown in the 2nd figure.
[main element label declaration]
10,20 pixels
Embodiment
See also the 2nd figure, the 2nd figure is the synoptic diagram of the present invention with first embodiment of a pixel 20 in the light emitting display device of current system driving, and wherein, this light-emitting diodes piping is example with the Organic Light Emitting Diode.Shown in the 2nd figure, pixel 20 includes sweep trace SL, data line DL, electric capacity reservoir part C, a plurality of thin film transistor (TFT) T1, T2, T3, T4, and Organic Light Emitting Diode OLED.Note that parts of the same name (sweep trace SL, data line DL, electric capacity reservoir part C and the Organic Light Emitting Diode OLED) cording among the 1st figure and the 2nd figure has identical functions and running, does not give unnecessary details in addition at this.Shown in the 2nd figure, thin film transistor (TFT) T2, T3 are used for constituting a current mirroring circuit (current mirror), it can order about an electric current with a current mirror ratio (mirror ratio) with the electric current that flows through thin film transistor (TFT) T2 and flow through thin film transistor (TFT) T3, thin film transistor (TFT) T1, T4 then are used as two switches and use, in simple terms, when the current mirroring circuit of thin film transistor (TFT) T2, T3 composition comes into operation, its grid need pass through thin film transistor (TFT) T1 mutual conduction, and thin film transistor (TFT) T2 needs to be coupled to data line DL by thin film transistor (TFT) T4.In the present embodiment, the grid of thin film transistor (TFT) T1 is coupled to sweep trace SL, and source electrode then is coupled to the grid of thin film transistor (TFT) T3 and the end of electric capacity reservoir part C, and drain electrode then is coupled to grid and the data line DL of thin film transistor (TFT) T2; The source electrode of thin film transistor (TFT) T3 is coupled to a voltage source V dd, and drain electrode then is coupled to the end of Organic Light Emitting Diode OLED; The source electrode of thin film transistor (TFT) T2 is coupled to voltage source V dd, and drain electrode then is coupled to the source electrode of thin film transistor (TFT) T4; The grid of thin film transistor (TFT) T4 is coupled to sweep trace SL, and drain electrode is coupled to data line DL.In addition, the other end of electric capacity reservoir part C system is connected to voltage source V dd, and the other end of Organic Light Emitting Diode OLED then is connected to another voltage source V ss.
See also the 3rd figure, the 3rd figure is the process flow diagram that drives the pixel 20 shown in the 2nd figure, be to be example with current system driven for emitting lights diode, and light emitting diode is an Organic Light Emitting Diode.The running that drives pixel 20 includes the following step:
Step 100: beginning;
Step 102: sweep trace SL transmission signals to the grid of thin film transistor (TFT) T1, T4 comes conducting membrane transistor T 1, T4;
Step 104: the data current signal I of data line DL
oGrid by thin film transistor (TFT) T4 in thin film transistor (TFT) T2 produces a voltage V
Pixel
Step 106: current mirroring circuit is according to data current signal I
oProduce a current signal I;
Step 108: electric capacity reservoir part C stored voltage V
Pixel
Step 110: current signal I drives Organic Light Emitting Diode OLED and sends corresponding light intensity;
Step 112: sweep trace SL stops to transmit this signal and not conducting membrane transistor T 1, T4;
Step 114: thin film transistor (TFT) T3 utilizes the stored voltage V of capacitor C
PixelProduce current signal I to keep the light intensity of Organic Light Emitting Diode OLED; And
Step 116: pixel drive is finished.
At first, when pixel current write phase (write stage), sweep trace SL transmits a signal to the grid of thin film transistor (TFT) T1, T4 and opens thin film transistor (TFT) T1, T4 (step 102), so thin film transistor (TFT) T4 can be considered a path, therefore, the data current signal I of data line DL
oCan flow through thin film transistor (TFT) T2, and according to data current signal I
o, the grid of thin film transistor (TFT) T2 can produce a corresponding voltage V
Pixel(step 104); Also can be considered a path because of thin film transistor (TFT) T1 again, so voltage V
PixelCan be passed to electric capacity reservoir part C and thin film transistor (TFT) T3.
Then, because the characteristic of current mirroring circuit, current mirroring circuit can be with a current mirror ratio copy data current signal I
oProduce a current signal I (I
o: the ratio of I approximates (W/L)
T2: (W/L)
T3Wherein W/L is the channel width/length ratio) (step 106).In addition, one of electric capacity reservoir part C end can keep previous mentioned voltage V
PixelSo that the pressure reduction at its two ends is Vdd-V
Pixel(step 108), simultaneously, current signal I can pass through Organic Light Emitting Diode OLED, makes Organic Light Emitting Diode OLED send corresponding light intensity (step 110), just finishes in this pixel current write phase.
Afterwards, begin to start a pixel copy data current phase (reproducing stage), at this moment, sweep trace SL stops to transmit this signal to close thin film transistor (TFT) T1, T4 (step 112), therefore thin film transistor (TFT) T1, T4 all are considered as one and open circuit, and are Vdd-V because electric capacity reservoir part C can keep the pressure reduction at its two ends
Pixel, and the path that discharges and recharges of electric capacity reservoir part C disappears along with closing of thin film transistor (TFT) T1, so the grid voltage that electric capacity reservoir part C can keep thin film transistor (TFT) T3 is V
PixelSo thin film transistor (TFT) T3 just can keep the intensity of current signal I, and therefore Organic Light Emitting Diode OLED also can keep its light intensity (step 114).At last, the driver of pixel 20 just can be finished (step 116).
Please note at this, among the 2nd figure, pixel 20 is to adopt 4 P type thin film transistor (TFT)s, but in fact, can also adopt N type thin film transistor (TFT), the spirit that also conforms with the present invention, see also the 4th figure, the 5th figure and the 6th figure, the 4th figure is the synoptic diagram of second embodiment of the pixel 20 shown in the 2nd figure, compared to first embodiment shown in the 2nd figure, among the embodiment in the 4th figure, thin film transistor (TFT) T1 and T4 as switch in the pixel 20 are N type thin film transistor (TFT), owing to known by industry as the N type thin film transistor (TFT) of switch and the operation and the principle of P type thin film transistor (TFT), so do not give unnecessary details in this in addition.
The 5th figure is the synoptic diagram of the 3rd embodiment of the pixel 20 shown in the 2nd figure, and the 6th figure is the synoptic diagram of the 4th embodiment of the pixel 20 shown in the 2nd figure.In the 5th figure, the thin film transistor (TFT) as current mirroring circuit in the pixel 20 changes N type thin film transistor (TFT) into; Its method of operating is as described below:
At first, when aforementioned pixel current write phase, sweep trace SL transmits a signal to the grid of thin film transistor (TFT) T1, T4 and opens thin film transistor (TFT) T1, T4, so thin film transistor (TFT) T4 can be considered a path, therefore, the data current signal I of data line DL
oCan flow through thin film transistor (TFT) T2, and according to data current signal I
o, the grid of thin film transistor (TFT) T2 can produce a corresponding voltage V
PixelAlso can be considered a path because of thin film transistor (TFT) T1 again, so voltage V
PixelCan be passed to electric capacity reservoir part C and thin film transistor (TFT) T3.
Then, because the characteristic of current mirroring circuit, current mirroring circuit can be with a current mirror ratio copy data current signal I
oProduce a current signal I (I
o: the ratio of I approximates (W/L)
T2: (W/L)
T3, wherein W/L is the channel width/length ratio).In addition, the end of electric capacity reservoir part C can keep previous mentioned voltage V
PixelSo that the pressure reduction at its two ends is a fixed value, simultaneously, current signal I can pass through Organic Light Emitting Diode OLED, makes Organic Light Emitting Diode OLED send corresponding light intensity, just finishes in this pixel current write phase.
Afterwards, begin to start aforesaid pixel copy data current phase (reproducing stage), at this moment, sweep trace SL stops to transmit this signal to close thin film transistor (TFT) T1, T4, so thin film transistor (TFT) T1, T4 all is considered as one and opens circuit, because electric capacity reservoir part C can keep the pressure reduction at its two ends, and the path that discharges and recharges of electric capacity reservoir part C disappears along with closing of thin film transistor (TFT) T1, therefore electric capacity reservoir part C can make the grid of thin film transistor (TFT) T3 and the voltage difference of source electrode be maintained at this fixed value, so thin film transistor (TFT) T3 just can be by this fixed value voltage, keep the intensity of current signal I, and therefore Organic Light Emitting Diode OLED also can keep its light intensity.So far the driver of pixel 20 just can be finished.
See also among the 6th figure, in the 6th figure, all thin film transistor (TFT)s are all N type thin film transistor (TFT) in the pixel 20.Compare with the pixel 20 shown in the 5th figure, the pixel 20 of the 6th figure only has only thin film transistor (TFT) T1, the T4 as switch to change N type thin film transistor (TFT) into, owing to known by industry as the N type thin film transistor (TFT) of switch and the operation and the principle of P type thin film transistor (TFT), and all the other operations are all similar with the pixel shown in the 5th figure, knowing this operator should understand, so do not give unnecessary details in this in addition.
In addition, see also the 7th figure, the 7th figure is the synoptic diagram of the 5th embodiment of the pixel 20 shown in the 2nd figure.Shown in the 7th figure, the coupling mode of electric capacity reservoir part C also is not limited between the grid that is coupled to voltage source V dd and thin film transistor (TFT) T3, in present embodiment, electric capacity reservoir part C is coupled between the grid and another voltage source V ss of thin film transistor (TFT) T3, therefore, can to keep the voltage difference between its two ends be V to electric capacity reservoir part C
Pixel-Vss, that is it is V that electric capacity reservoir part C also can reach the grid voltage of keeping thin film transistor (TFT) T3
PixelPurpose.See also the 8th figure, the 8th figure is the synoptic diagram of the 6th embodiment of the pixel 20 shown in the 2nd figure.In the present embodiment, the position of Organic Light Emitting Diode OLED also can be coupled between voltage source V dd and the thin film transistor (TFT) T3, because current signal I system flow to voltage source V ss via thin film transistor (TFT) T3 by voltage source V dd, therefore if Organic Light Emitting Diode OLED is positioned on the current path of voltage source V dd, Vss, then current signal I all can reach the purpose that drives Organic Light Emitting Diode OLED.
See also the 9th figure, the 9th figure is the synoptic diagram of the 7th embodiment of the pixel 20 shown in the 2nd figure.According to shown in first embodiment of the 2nd figure, thin film transistor (TFT) T1, the T4 signal whether conducting system is all transmitted by same sweep trace SL is controlled, yet, on practice, also can use two sweep trace SL1, SL2 to come control TFT T1, T4 respectively, the voltage level V that the back coupling effect (feed-through effect) that is caused with the moment of reducing thin film transistor (TFT) T1, T4 switching state is kept electric capacity reservoir part C one end
PixelInfluence, in other words, as yet not before the conducting, sweep trace SL1 just can transmit signal earlier with conducting membrane transistor T 1 at transistor T 4, and before transistor T 1 was not in nonconducting state as yet, sweep trace SL2 just can transmit signal earlier became nonconducting state to order about thin film transistor (TFT) T4.
Please note at this, the grid of thin film transistor (TFT) T2 in the disclosed pixel 20 of the present invention is connected to data line DL, so, when the pixel current write phase, can rewrite the grid voltage of thin film transistor (TFT) T2 rapidly, that is when sweep trace SL made thin film transistor (TFT) T1, T4 conducting, the grid voltage of thin film transistor (TFT) T2 can be set up the required corresponding voltage V of electric current that flows through T2 rapidly
Pixel, therefore pixel 20 of the present invention can have higher response speed (response speed).
In addition, compared to prior art, pixel disclosed in this invention utilizes the principle of current drives to have better pixel uniformity coefficient compared with existing driven panel pixels, and the GTG brightness that can stably keep desire to show.
The above only is preferred embodiment of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (24)
1. dot structure comprises:
Light-emitting component;
First sweep trace is used to transmit first signal;
Second sweep trace is used to transmit secondary signal;
Data line is used to transmit the data current signal;
The first transistor has grid and is coupled to this first sweep trace;
Current mirroring circuit is electrically connected at this light-emitting component, and this current mirroring circuit includes:
Transistor seconds, have in source electrode that grid is connected to this data line and this first transistor and the drain electrode an end and
The 3rd transistor has grid and is coupled to the source electrode of this first transistor and the other end in the drain electrode; And
The 4th transistor has grid and is coupled to this second sweep trace, and the end in source electrode and the drain electrode is electrically connected to the drain electrode of this transistor seconds, and the other end in source electrode and the drain electrode is electrically connected to this transistor seconds grid and this data line.
2. dot structure according to claim 1, wherein this first transistor and the 4th transistor can be N type thin film transistor (TFT) or P type thin film transistor (TFT).
3. dot structure according to claim 1, wherein this transistor seconds and the 3rd transistor can be N type thin film transistor (TFT) or P type thin film transistor (TFT).
4. dot structure according to claim 1, wherein this light-emitting component is a light emitting diode.
5. dot structure comprises:
Light-emitting component;
First sweep trace is used to transmit first signal;
Data line is used to transmit the data current signal;
The first transistor has grid and is coupled to this first sweep trace;
Current mirroring circuit is electrically connected at this light-emitting component, and this current mirroring circuit includes:
Transistor seconds, have in source electrode that grid is connected to this data line and this first transistor and the drain electrode an end and
The 3rd transistor has grid and be coupled to the source electrode of this first transistor and the other end in the drain electrode, and the end in source electrode and the drain electrode is connected to the source electrode of this transistor seconds and the other end in the drain electrode; And
The 4th transistor, have grid and be coupled to this first sweep trace, and the end in source electrode and the drain electrode is electrically connected to the source electrode of this transistor seconds and the other end in the drain electrode, and the other end in source electrode and the drain electrode is electrically connected to this transistor seconds grid and this data line.
6. dot structure according to claim 5, wherein this first transistor and the 4th transistor can be N type thin film transistor (TFT) or P type thin film transistor (TFT).
7. dot structure according to claim 5, wherein this transistor seconds and the 3rd transistor can be N type thin film transistor (TFT) or P type thin film transistor (TFT).
8. dot structure according to claim 5, wherein this light-emitting component is a light emitting diode.
9. a dot structure has light emitting diode and electric capacity reservoir part, comprising:
Voltage source;
The first transistor has grid and is coupled to sweep trace;
Transistor seconds has grid and is electrically connected to data line and is coupled to the source electrode of this first transistor and the end in the drain electrode;
The 3rd transistor, have grid and be coupled to the source electrode of this first transistor and the other end in the drain electrode, and the 3rd transistorized source electrode is coupled to this light emitting diode with a end in the drain electrode, and the end in the source electrode that the 3rd transistorized source electrode and the other end in the drain electrode are coupled to this voltage source and this transistor seconds and the drain electrode;
The 4th transistor has grid and is coupled to this sweep trace, and the end in the 4th transistorized source electrode and the drain electrode is coupled to this data line;
Wherein, the other end in the 4th transistorized source electrode and the drain electrode is coupled to the source electrode of this transistor seconds and the other end in the drain electrode, and the grid of this transistor seconds is to be coupled to the 3rd transistorized grid by this first transistor to be used to form current mirroring circuit.
10. dot structure according to claim 9, wherein the other end in the source electrode of this transistor seconds and the drain electrode is coupled to this light-emitting component or this voltage source.
11. dot structure according to claim 9, wherein this sweep trace has first sweep trace and second sweep trace.
12. dot structure according to claim 11, wherein the grid of this first transistor is coupled to this first sweep trace.
13. dot structure according to claim 11, wherein the 4th transistorized grid is coupled to this first sweep trace or this second sweep trace.
14. dot structure according to claim 9, wherein this electric capacity reservoir part is coupled between this voltage source and the 3rd transistorized grid or is coupled between the source electrode and the end in the drain electrode of the 3rd transistorized grid and this transistor seconds.
15. dot structure according to claim 9, wherein this first transistor and the 4th transistor can be N type thin film transistor (TFT) or P type thin film transistor (TFT).
16. dot structure according to claim 9, wherein this transistor seconds and the 3rd transistor can be N type thin film transistor (TFT) or P type thin film transistor (TFT).
17. a display device includes:
Light-emitting component;
First sweep trace is used to transmit first signal;
Second sweep trace is used to transmit secondary signal;
Data line is used to transmit the data current signal;
The first transistor has grid and is coupled to this first sweep trace; And
Current mirroring circuit is electrically connected at this light-emitting component, and this current mirroring circuit includes:
Transistor seconds, have in source electrode that grid is connected to this data line and this first transistor and the drain electrode an end and
The 3rd transistor has grid and is coupled to the source electrode of this first transistor and the other end in the drain electrode; And
The 4th transistor, have grid and be coupled to this second sweep trace, and the end in source electrode and the drain electrode is electrically connected to the source electrode of this transistor seconds and the end in the drain electrode, and the other end in source electrode and the drain electrode is electrically connected to this transistor seconds grid and this data line.
18. display device according to claim 17, wherein this first transistor and the 4th transistor can be N type thin film transistor (TFT) or P type thin film transistor (TFT).
19. display device according to claim 17, wherein this transistor seconds and the 3rd transistor can be N type thin film transistor (TFT) or P type thin film transistor (TFT).
20. display device according to claim 17, wherein this light-emitting component is a light emitting diode.
21. a display device includes:
Light-emitting component;
First sweep trace is used to transmit first signal;
Data line is used to transmit the data current signal;
The first transistor has grid and is coupled to this first sweep trace; And
Current mirroring circuit is electrically connected at this light-emitting component, and this current mirroring circuit includes:
Transistor seconds, have in source electrode that grid is connected to this data line and this first transistor and the drain electrode an end and
The 3rd transistor has grid and be coupled to the source electrode of this first transistor and the other end in the drain electrode, and the end in source electrode and the drain electrode is connected to the source electrode of this transistor seconds and the end in the drain electrode; And
The 4th transistor, have grid and be coupled to this first sweep trace, and the end in source electrode and the drain electrode is electrically connected to the source electrode of this transistor seconds and the other end in the drain electrode, and the other end in source electrode and the drain electrode is electrically connected to this transistor seconds grid and this data line.
22. display device according to claim 21, wherein this first transistor and the 4th transistor can be N type thin film transistor (TFT) or P type thin film transistor (TFT).
23. display device according to claim 21, wherein this transistor seconds and the 3rd transistor can be N type thin film transistor (TFT) or P type thin film transistor (TFT).
24. display device according to claim 21, wherein this light-emitting component is a light emitting diode.
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| CNB2004100950602A CN100371977C (en) | 2004-11-23 | 2004-11-23 | Organic luminous diode display device drived by current mode and picture element structure thereof |
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| CNB2004100950602A CN100371977C (en) | 2004-11-23 | 2004-11-23 | Organic luminous diode display device drived by current mode and picture element structure thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030085665A1 (en) * | 2001-11-06 | 2003-05-08 | Yoo Juhn Suk | Apparatus and method of driving electro luminescence panel |
| CN1495699A (en) * | 2002-06-18 | 2004-05-12 | 三星Sdi株式会社 | Image display deivce and driving method |
-
2004
- 2004-11-23 CN CNB2004100950602A patent/CN100371977C/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030085665A1 (en) * | 2001-11-06 | 2003-05-08 | Yoo Juhn Suk | Apparatus and method of driving electro luminescence panel |
| CN1495699A (en) * | 2002-06-18 | 2004-05-12 | 三星Sdi株式会社 | Image display deivce and driving method |
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| CN1609937A (en) | 2005-04-27 |
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