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CN100362624C - Device for controlling D.C. bias on wafer - Google Patents

Device for controlling D.C. bias on wafer Download PDF

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Publication number
CN100362624C
CN100362624C CNB2005101306532A CN200510130653A CN100362624C CN 100362624 C CN100362624 C CN 100362624C CN B2005101306532 A CNB2005101306532 A CN B2005101306532A CN 200510130653 A CN200510130653 A CN 200510130653A CN 100362624 C CN100362624 C CN 100362624C
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radio
power supply
wafer
bias
frequency
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CN1845299A (en
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刘利坚
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Beijing North Microelectronics Co Ltd
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Beijing North Microelectronics Co Ltd
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Abstract

The present invention provides a device for controlling DC bias on a wafer, which relates to the microelectronic technical field and comprises a lower electrode, an electrostatic adsorption electrode, a radio-frequency power supply, a radio-frequency matcher, a DC power supply and a filter, wherein the radio-frequency power supply is connected to the radio-frequency matcher which is directly connected with the lower electrode or is connected with the lower electrode by a radio-frequency capacitor, and the DC power supply is connected with the electrostatic adsorption electrode by the filter; the present invention is also provided with a peak detection circuit and radio-frequency control devices, wherein the peak detection circuit is connected with the lower electrode, and the radio-frequency control devices are respectively connected with the peak detection circuit and the radio-frequency power supply. The device can stably control DC bias on a wafer, and the present invention can also adjust the DC bias on an etched wafer in a radial direction and compensate the etching rate distribution on an original wafer so as to realize an even etching rate.

Description

The device of the Dc bias on a kind of control wafer
Technical field
The present invention relates to microelectronics technology, the device of the Dc bias on particularly a kind of control wafer.
Background technology
Plasma device is widely used in the manufacturing process of making integrated circuit (IC) or MEMS device, and wherein the method and apparatus of the Dc bias on the control wafer is widely used in the technology such as etching.Under low pressure, reacting gas is under the exciting of radio-frequency power, produce ionization and form plasma, the atom, molecule and the free radical isoreactivity particle that contain a large amount of electronics, ion, excitation state in the plasma, these charged active reactive groups to the material surface accelerated motion that is etched, bombard the material surface that is etched under the Dc bias effect on the wafer, with various physics of its generation and chemical reaction and form volatile product, thereby the material surface performance is changed.
In semiconductor machining, the be activated material on plasma etched wafer surface under the acceleration of the Dc bias on the wafer of producing of the process gas that enters the etching apparatus reaction chamber.The size of Dc bias and the directly influence that distributes distribute to the etch rate of wafer surface material and the uniformity of etch rate on the wafer.In addition, the etch rate uniformity on the wafer surface is also relevant with factor such as Temperature Distribution on the distribution of plasma and the wafer.The size of present wafer is increased to 300mm from 100mm.The volume of reaction chamber also increases accordingly, and this makes and wants to provide Temperature Distribution and the Dc bias on the wafer on uniform more plasma distribution, the wafer to distribute difficult more.By suitably adjusting the intake method of jet inlet, the shape of coil or top electrode, factors such as reaction chamber air suction mode, etch rate on the wafer and uniformity can be adjusted into annular shaft symmetrical distribution basically, but how to eliminate the radially difference of the etch rate on the wafer, further improve the etch rate uniformity on the whole silicon wafer, have bigger difficulty.
System shown in Fig. 1~3 is the bottom electrode system structures that great majority adopt in the present semiconductor etching device, and the user comes Dc bias on the control wafer by the power output of setting radio-frequency power supply.There is following problem in this method: (1) user is the Dc bias on the control wafer indirectly, because the energy loss in matching network is indefinite and uncertain, the Dc bias on the wafer can not keep by radio frequency power output of simple setting; (2) because the intake method of jet inlet, the shape of coil or top electrode, reasons such as reaction chamber air suction mode, etch rate uniformity on the wafer presents radial distribution, wish radial distribution by the Dc bias on the lower electrode tracking joint wafer, to compensate original distribution, realize uniform etch rate on the entire wafer, the system shown in Fig. 1~3 does not obviously all possess this function.
Therefore present most etching apparatus all is faced with the uneven problem of etch rate, and this has caused significant limitation to semiconductor fabrication process.
Summary of the invention
An object of the present invention is to provide the device of the Dc bias on a kind of control wafer stably; Another object of the present invention provides the device of the Dc bias on the wafer that can radiai adjustment be etched, and the etch rate on original wafer is distributed to compensate, and realizes uniform etch rate.
The objective of the invention is to realize by the following technical solutions:
The device of the Dc bias on the control wafer of the present invention, comprise bottom electrode (1), radio-frequency power supply, radio frequency adaptation, wherein radio-frequency power supply is connected to radio frequency adaptation, radio frequency adaptation is connected with bottom electrode (1), also be provided with peak detection circuit and radio frequency control apparatus, described peak detection circuit is connected with described bottom electrode, described radio frequency control apparatus is connected with radio-frequency power supply with peak detection circuit respectively, described bottom electrode (1) is two concentric electrodes (11,12), the peak detection circuit that passes through separately is connected with described radio frequency control apparatus respectively, described radio-frequency power supply and radio frequency adaptation are respectively two, two radio-frequency power supplies connect radio frequency control apparatus respectively, wherein radio-frequency power supply one is connected to bottom electrode one (11) by radio frequency adaptation one, and radio-frequency power supply two is connected to bottom electrode two (12) by radio frequency adaptation two.
Also comprise electrode for electrostatic attraction (2), DC power supply and filter, DC power supply is connected with electrode for electrostatic attraction (2) by filter, described electrode for electrostatic attraction is concentric two electrodes (21,22), and described DC power supply is connected with two electrode for electrostatic attraction (21,22) respectively by filter.
Described bottom electrode and electrode for electrostatic attraction are identical electrodes.
Described radio frequency control apparatus is computer or hardware proportional-integral-differential three-mode pid algorithm control module.
The present invention is by the design of peak detection circuit feedback by the Dc bias on the radio frequency control apparatus control wafer, the Dc bias on the control wafer stably, thereby eliminated the influence of reaction environment variation to the Dc bias on the wafer, reduced sheet to sheet (wafer towafer), criticize batch (lot to lot), chamber is to the etch rate difference of chamber (chamber to chamber); And two concentric bottom electrodes or electrode for electrostatic attraction are set in mode, the radial distribution of the Dc bias on can control wafer, original etch rate radial distribution difference on the wafer is compensated, thereby make that the etch rate of each point is more close on wafer surface.Even along with the increase of wafer size, this technical scheme also can etch rate and the uniformity of better controlled from wafer central authorities to the edge.
Description of drawings
Fig. 1 is one of existing bottom electrode system structure;
Fig. 2 is two of an existing bottom electrode system structure;
Fig. 3 is three of an existing bottom electrode system structure;
Fig. 4 is the single bottom electrode control system figure among the present invention;
Fig. 5 is the two bottom electrode control system figure among the present invention;
Fig. 6 be among the present invention two bottom electrode control system figure two.
Embodiment
Following examples are used to illustrate the present invention; but be not used for limiting the scope of the invention; the those of ordinary skill in relevant technologies field; under the situation that does not break away from the spirit and scope of the present invention; can also make various variations and modification; therefore all technical schemes that are equal to also belong to category of the present invention, and scope of patent protection of the present invention should be limited by every claim.
Embodiment 1
With reference to figure 4, be the figure of bottom electrode system that realizes that first purpose of the present invention designs.
The device of the Dc bias on the control wafer comprises bottom electrode 1 and electrode for electrostatic attraction 2, radio-frequency power supply, radio frequency adaptation, DC power supply and filter.Wherein, bottom electrode 1 and electrode for electrostatic attraction 2 are made same electrode.Radio-frequency power supply is connected to radio frequency adaptation, radio frequency adaptation is connected with bottom electrode 1 by radio-frequency capacitor C, DC power supply is connected with electrode for electrostatic attraction 2 by filter, and radio-frequency power supply is applied to bottom electrode 1 by radio frequency adaptation with radio-frequency power, thereby produces Dc bias on wafer.Peak detection circuit and bottom electrode 1, utilize the radio-frequency voltage peak-to-peak value on the peak detection circuit detection bottom electrode, send this value to computer or hardware PID (proportional-integral-differential three-mode) algoritic module, the result who goes out by the algorithm computation in computer or the hardware pid algorithm module adjusts the set point of radio-frequency power supply, thereby carry out FEEDBACK CONTROL, reach the purpose of the Dc bias on the accurate control wafer.Radio frequency adaptation among the present invention also can directly be connected with bottom electrode 1.
Through test determination, Dc bias on the wafer is about 1/2 of radio-frequency voltage peak-to-peak value on the bottom electrode, and in technical process, directly detect Dc bias on the wafer and be unusual difficulty, therefore determine Dc bias on the wafer by the radio-frequency voltage peak-to-peak value on the control bottom electrode.
Embodiment 2
With reference to figure 5, be the figure of bottom electrode system that realizes that second purpose of the present invention designs.
The device of the Dc bias on the control wafer comprises radio-frequency power supply one, radio-frequency power supply two, radio frequency adaptation one, radio frequency adaptation two, radio-frequency capacitor one C1, radio-frequency capacitor two C, DC power supply, filter and two concentric bottom electrode that is electrically insulated from each other and electrode for electrostatic attraction, i.e. bottom electrode 1 and electrode for electrostatic attraction 1, bottom electrode 2 12 and Electrostatic Absorption 2 22.DC power supply is connected with electrode for electrostatic attraction 2 22 with electrode for electrostatic attraction 1 respectively by filter, radio-frequency power supply one and radio-frequency power supply two are applied to bottom electrode 1 and bottom electrode 2 12 by radio frequency adaptation one and radio frequency adaptation two with radio-frequency power respectively, wherein the power output of radio-frequency power supply one and radio-frequency power supply two is adjustable respectively, utilize two peak detection circuits to detect the peak value at the radio-frequency voltage peak on bottom electrode 1 and the bottom electrode 2 12 respectively, send this value to computer or hardware pid algorithm module, the result who goes out by the algorithm computation in computer or the hardware pid algorithm module adjusts the set point of radio-frequency power supply one and radio-frequency power supply two, thereby carry out FEEDBACK CONTROL, reach the purpose of the Dc bias on the accurate control wafer.
Wherein, can directly be connected between radio frequency adaptation one and the bottom electrode 1, also can connect by radio frequency electric capacity one C1; Can directly be connected between radio frequency adaptation two and the bottom electrode 2 12, also can connect by radio frequency electric capacity two C2.
Two radio-frequency power supplies can add that phase-shift controller (such as the VL400 phase-shift controller of ENI company) phase shift (greater than 20 degree) interferes with each other avoiding.Two radio-frequency power supplies also can utilize (CEX) function that excites jointly of radio frequency control apparatus to avoid interfering with each other (such as the Navigator of AE PLC).
Embodiment 3
With reference to figure 6, be the another kind of bottom electrode figure of system that realizes that second purpose of the present invention designs.
Remove bottom electrode and electrode for electrostatic attraction in the present embodiment and be arranged in the surface insulation layer, all the other are identical with embodiment 2, no longer detailed description.
The present invention is applicable to any occasion that needs the Dc bias on the control wafer.

Claims (4)

1. the device of the Dc bias on the control wafer, comprise bottom electrode (1), radio-frequency power supply, radio frequency adaptation, wherein radio-frequency power supply is connected to radio frequency adaptation, radio frequency adaptation is connected with bottom electrode (1), it is characterized in that, also be provided with peak detection circuit and radio frequency control apparatus, described peak detection circuit is connected with described bottom electrode, described radio frequency control apparatus is connected with radio-frequency power supply with peak detection circuit respectively, described bottom electrode (1) is two concentric electrodes (11,12), the peak detection circuit that passes through separately is connected with described radio frequency control apparatus respectively, described radio-frequency power supply and radio frequency adaptation are respectively two, two radio-frequency power supplies connect radio frequency control apparatus respectively, wherein radio-frequency power supply one is connected to bottom electrode one (11) by radio frequency adaptation one, and radio-frequency power supply two is connected to bottom electrode two (12) by radio frequency adaptation two.
2. the device of the Dc bias on the control wafer as claimed in claim 1, it is characterized in that, also comprise electrode for electrostatic attraction (2), DC power supply and filter, DC power supply is connected with electrode for electrostatic attraction (2) by filter, described electrode for electrostatic attraction is concentric two electrodes (21,22), and described DC power supply is connected with two electrode for electrostatic attraction (21,22) respectively by filter.
3. the device of the Dc bias on the control wafer as claimed in claim 2 is characterized in that, described bottom electrode and electrode for electrostatic attraction are identical electrodes.
4. the device of the Dc bias on the control wafer as claimed in claim 1 or 2 is characterized in that, described radio frequency control apparatus is computer or hardware proportional-integral-differential three-mode pid algorithm control module.
CNB2005101306532A 2005-12-16 2005-12-16 Device for controlling D.C. bias on wafer Active CN100362624C (en)

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101470455B (en) * 2007-12-29 2011-06-15 北京北方微电子基地设备工艺研究中心有限责任公司 Direct current auto-bias compensation method and system, semiconductor processing equipment
JP5496568B2 (en) * 2009-08-04 2014-05-21 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
CN106702335B (en) * 2015-11-13 2019-08-23 北京北方华创微电子装备有限公司 Lower electrode and semiconductor processing equipment
CN108364845B (en) * 2018-03-20 2020-05-05 武汉华星光电技术有限公司 Dry etching equipment
CN111698821A (en) * 2019-03-13 2020-09-22 北京北方华创微电子装备有限公司 Susceptor, method of adjusting bias voltage of susceptor, and plasma generating apparatus
CN112345814B (en) * 2020-10-30 2024-07-23 北京北方华创微电子装备有限公司 DC bias voltage detection method, device, jig and lower electrode system

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11209873A (en) * 1998-01-22 1999-08-03 Applied Materials Inc Sputtering device
JP2001085396A (en) * 1999-09-10 2001-03-30 Hitachi Ltd Plasma treatment equipment
US20040226657A1 (en) * 2003-05-16 2004-11-18 Applied Materials, Inc. Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power
US20050031796A1 (en) * 2003-08-07 2005-02-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for controlling spatial distribution of RF power and plasma density
US20050264219A1 (en) * 2004-05-28 2005-12-01 Lam Research Corporation Vacuum plasma processor including control in response to DC bias voltage

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11209873A (en) * 1998-01-22 1999-08-03 Applied Materials Inc Sputtering device
JP2001085396A (en) * 1999-09-10 2001-03-30 Hitachi Ltd Plasma treatment equipment
US20040226657A1 (en) * 2003-05-16 2004-11-18 Applied Materials, Inc. Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power
US20050031796A1 (en) * 2003-08-07 2005-02-10 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for controlling spatial distribution of RF power and plasma density
US20050264219A1 (en) * 2004-05-28 2005-12-01 Lam Research Corporation Vacuum plasma processor including control in response to DC bias voltage

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Address after: 100176 8 Wenchang Avenue, Beijing economic and Technological Development Zone

Patentee after: Beijing North China microelectronics equipment Co Ltd

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Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing

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