CN100364123C - Method for producing GaN-based illuminator device and its device structure - Google Patents
Method for producing GaN-based illuminator device and its device structure Download PDFInfo
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- CN100364123C CN100364123C CNB2005100116615A CN200510011661A CN100364123C CN 100364123 C CN100364123 C CN 100364123C CN B2005100116615 A CNB2005100116615 A CN B2005100116615A CN 200510011661 A CN200510011661 A CN 200510011661A CN 100364123 C CN100364123 C CN 100364123C
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 239000000463 material Substances 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 17
- 229910052594 sapphire Inorganic materials 0.000 claims description 61
- 239000010980 sapphire Substances 0.000 claims description 61
- 239000011248 coating agent Substances 0.000 claims description 29
- 238000000576 coating method Methods 0.000 claims description 29
- 239000007769 metal material Substances 0.000 claims description 12
- 238000001312 dry etching Methods 0.000 claims description 11
- 238000001039 wet etching Methods 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 238000000407 epitaxy Methods 0.000 claims description 7
- 238000002310 reflectometry Methods 0.000 claims description 7
- 230000000737 periodic effect Effects 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 abstract description 61
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract description 9
- 230000007547 defect Effects 0.000 abstract description 2
- 238000004020 luminiscence type Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 12
- 238000011049 filling Methods 0.000 description 8
- 238000013461 design Methods 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- MUJOIMFVNIBMKC-UHFFFAOYSA-N fludioxonil Chemical compound C=12OC(F)(F)OC2=CC=CC=1C1=CNC=C1C#N MUJOIMFVNIBMKC-UHFFFAOYSA-N 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 230000005713 exacerbation Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
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Abstract
The present invention belongs to the manufacture field of a gallium nitride-based light emitting, device which is characterized in that the heat resistance of the device is effectively reduced by a method that a slotted hole is formed in a substrate material and a part of epitaxial layer or only in the substrate material and a material of which the heat conductivity is higher than the heat conductivity of the substrate material is filled to effectively reduce the heat resistane of the device, and accordingly, all the performance indexes of the device, such as the luminescence efficiency of an LED, etc. The present invention effectively eliminates the defects of low heat conductivity of the substrate material or mismatched thermal expansion coefficients, etc. and a high-performance GaN-based luminescent device can be obtained.
Description
Technical field
The present invention relates to the manufacture method of gallium nitride based light emitting diode (LED), laser diode (LD), purpose is in order to reduce the device thermal resistance, and improves every performance index of device.The invention belongs to the manufacture technology field of gallium nitride base light-emitting device.
Background technology
Luminescent device based on semiconductor material with wide forbidden band is the emphasis of Semiconductor Optic Electronics field and field of electronic devices research and development always.To be that the semiconductor illuminating light source of representative has advantages such as environmental protection, energy-conservation, good weatherability and life-span be long based on the high-power blue-ray LED of III-V group nitride material, will cause a revolution in lighting source market, finally may replace the traditional lighting light source.Simultaneously, based on the short wavelength laser diode (LD) of GaN material because it in the advantage aspect the optical storage, had caused the revolution of optical storage mode already.But with regard to present circumstances, the high great power LED of GaN base LD cost still is difficult to extensively replace traditional lighting in domestic lighting market.Studies show that, comprise the solution that all multifactor impacts such as heat dissipation problem of device under the big injection current the problems referred to above.Particularly for LED, it is very outstanding that the factor of aspects such as luminous efficiency seems.
Because mixing, the p type of III group-III nitride is subject to the solubility that Mg led and the higher activation energy in hole, therefore, for making LED and LD, be difficult to obtain the p type GaN layer of high hole concentration, under big injection current condition, heat is especially easily in p type region generating.This heat certainly will could dissipate on heat sink by total.However, because GaN base luminescent device and electronic device temperature generally are lower than 200 ℃, a little less than the thermal radiation very, so can not rely on thermal radiation to dispel the heat, this just means that the heat radiation approach of GaN base luminescent device mainly is heat conduction and thermal convection.As everyone knows, the III group-III nitride has two basic properties (the document H.Mokoc.Nitride semiconductors and devices.Berlin:Springer that sees reference, 1999): the first, and fusing point is high.The fusing point of AlN is more than the 3000K, and the fusing point of GaN is more than the 2000K, and the fusing point of InN is also more than 1200K; The second, the equilibrium pressure of nitrogen is very high.More than two character determined to be difficult to obtain high-quality, large tracts of land body monocrystalline nitride, so the III group-III nitride can only obtain by heterogeneous epitaxial technology.Up to the present, with sapphire (Sapphire) be growth technology the most ripe (the document S.Nakamura that sees reference, the S.Pearton of substrate, and G.Fasol, The Blue Laser Diode:The Complete Story, Berlin, Springer, 2000).
Sapphire has the advantages such as the easily property obtained of the low and large tracts of land material of price, but it has the disadvantage of two aspects: the first, and extremely low thermal conductivity; The second, lattice constant and thermal coefficient of expansion and GaN material do not match.The former causes the thermal resistance (thermal resistance is defined as the temperature difference of device and surrounding environment and the ratio of corresponding burn-off power) of device to increase, produce serious self-heating effect, therefore the temperature of chip itself is very high under big injection current, not only make the device performance degradation that comprises LED and LD luminous efficiency etc., and make the component failure rate be the index law increase.The latter causes in the GaN epitaxial loayer extra high defect concentration on the one hand, and (dislocation density is generally 10
10More than the cm-2), cause existing among the GaN strong twin shaft compression on the other hand, particularly the difference owing to thermal coefficient of expansion can be introduced extra thermal stress (T.Kozawa in GaN when the variations in temperature of chip itself, T.Kachi, H.Kano, H.Nagase, N.Koide, and K.Manabe, Thermal Stress in GaN EpitaxyLayers Grown on Sapphire Substrates, J.Appl.Phys.1995 77 (9): 4389-4392).Therefore, both all produce destructive influence to the Performance And Reliability of device.
For reducing the thermal resistance of chip under the big injection current, thereby reduce the temperature of chip itself, usually the method that adopts is to utilize face-down bonding technique that the heat sink material of GaN base epitaxial wafer and high heat conductance is welded, reduce the temperature (D.A.Steigerwald of chip itself by the efficient heat conduction of high thermal conductivity material, J.C.Bhat, D.Collins, R.M.Fletcher, M.O.Holcomb, et al, Illumination With Solid State Lighting Technology, IEEE J.Sel.Top.Quant.Electron.2002 8 (2): 310-320).Secondly, it also is the very effective method that reduces the device thermal resistance that Sapphire Substrate and GaN epitaxial loayer are peeled away, the normal technology laser lift-off technique (Laser Lift-off) that adopts: the UV laser beam irradiation GaN and the sapphire interface that utilize high power density, thereby realize GaN and the sapphire (T.Fujii that separates, Y.Gao, R.Sharma, E.L.Hu, S.P.Denbaars, and S.Nakamura, Increase in the ExtractionEfficiency of GaN-based Light-emitting Diodes Via Surface Roughning.Appl.Phys.Lett., 2,004 84 (6): 855-857).
Yet above-mentioned two kinds of methods need expensive equipment on the one hand, have therefore increased the cost of element manufacturing; Increased technical difficulty on the other hand, very unfavorable to the rate of finished products that improves element manufacturing.The present invention proposes novel GaN base luminescent device structure, not only reduced thermal resistance but also improved the every performance index of device of luminous efficiency of comprising LED etc.
Summary of the invention
The present invention is the high thermal resistance problem of the GaN base luminescent device that causes for the utmost point lower thermal conductivity that solves owing to Sapphire Substrate, and improve the every performance index of device comprise LED luminous efficiency etc. and finish, its objective is the manufacturing technology that novel GaN base luminescent device is provided.
Manufacture method of the present invention comprises material epitaxy, etching and preparation contact electrode, it is characterized in that:
By utilizing figure that dry etching or wet etching go out to need substrate etching forming slotted eye, and fill and go up reflectivity height, thermal conductivity far, and improve its luminous efficiency greater than the material of substrate thermal conductivity thermal resistance with effective reduction GaN base luminescent device.
By utilizing dry etching or wet etching substrate etching to be gone out the figure of needs to form slotted eye, then resilient coating corresponding with described slotted eye or resilient coating and the epitaxial loayer that closes on that is positioned on the resilient coating are etched away, fill to go up reflectivity height, thermal conductivity far at last greater than the material of substrate thermal conductivity thermal resistance, and improve its luminous efficiency with effective reduction GaN base luminescent device.
Described slotted eye is distributed in arbitrary position of described substrate, be periodic arrangement or random arrangement, its degree of depth is less than or equal to thickness, the buffer layer thickness of described substrate and is positioned at three sums of an epitaxy layer thickness of closing on the resilient coating, and the degree of depth of each slotted eye is arbitrarily.
Described slotted eye figure in the plane along the size of either direction between 0.1 micron-100,000 microns.
Described slotted eye be shaped as arbitrary shape.
What extension obtained on the tangible Sapphire Substrate of material of making GaN base luminescent device commonly used at present.In the present invention, by adopting means such as wet method or dry etching some zone of Sapphire Substrate or part epitaxial loayer is got rid of to form slotted eye, be filled into the material of thermal conductivity afterwards greater than the sapphire thermal conductivity in these zones, on Sapphire Substrate, form the approach that dispels the heat efficiently, reduce the thermal resistance of device, improved every performance index of device; On the other hand, if adopt the packing material of high reflectance,, can improve the light extraction efficiency of LED device hugely because the distance between GaN material and the reflecting material shortens.The manufacturing technology compatibility of this technology and present GaN base luminescent device does not need complex apparatus and increase complicated manufacture craft, so cost of manufacture has obtained reduction.Experimental result shows, uses the new structure that proposes of the present invention, and it is low to obtain cost of manufacture, and the device thermal resistance is little, the GaN base luminescent device that performance is better.
Description of drawings
Fig. 1 is the sectional drawing of the GaN base LED of the embodiment of the invention 1.
Fig. 2 is the sectional drawing of the GaN base LED of the embodiment of the invention 2.
Fig. 3 is the sectional drawing of GaN base LED in the embodiment of the invention 3.
Fig. 4 is the sectional drawing of GaN base LD in the embodiment of the invention 4.
Fig. 5 is the sectional drawing of GaN base LD in the embodiment of the invention 5.
Fig. 6 is the sectional drawing of GaN base LD in the embodiment of the invention 6.
Embodiment
The present invention realizes according to following technical scheme:
The present invention proves that under big injection current condition, because the thermal conductivity of Sapphire Substrate is extremely low, GaN based light-emitting diode and laser diode junction temperature rise very fast, and causing at short notice, luminous efficiency descends even lost efficacy.
At present, the normal GaN based light-emitting diode epitaxial structure that adopts as shown in Figure 1.Wherein, 1 is sapphire, and as the substrate of epitaxial growth GaN material, 2 is the resilient coating that forms between first contact electrode layer 3 and sapphire 1, and 3 is the first contact electrode layer material, above epitaxial growth In successively
xGa
yAl
1-x-yN/In
uGa
vAl
1-u-vThe GaN Multiple Quantum Well active area 4 and the second contact electrode layer material 5, resilient coating 2, first contact electrode layer 3, active area 4, second contact electrode layer 5 can be generally called epitaxial loayer, and its gross thickness is about 4500nm.In the process of making LED, adopt etching technics that second contact electrode layer 5 and the active area 4 of part epitaxial material are etched away usually earlier, to expose first contact electrode layer 3, the degree of depth of this technology etching very shallow (about 500nm).On first contact electrode layer and second contact electrode layer, make first contact electrode 6 and second contact electrode 7 then respectively, finish the manufacture craft of tube core.Because the thermal conductivity of Sapphire Substrate itself is lower, cause when device is worked under big injection current condition, the temperature of chip rises very big.Add the bigger thermal strain of introducing in epitaxial loayer, severe exacerbation the characteristic of GaN sill, thereby influenced the luminous efficiency and the thermal stability of device.
The present invention further proves, if some zone in Sapphire Substrate 1, resilient coating 2, first contact electrode layer 3 makes slotted eye, and fill therein thermal conductivity greater than the material 8 of sapphire thermal conductivity as aluminium (Al), as the material among Fig. 18, then can eliminate the drawback of Sapphire Substrate 1 lower thermal conductivity, effectively reduce the device thermal resistance, thereby can improve every performance index of device greatly.Particularly,, can improve the light extraction efficiency of LED device hugely because the distance between GaN material and the reflecting material shortens for LED.On the other hand, because this manufacturing technology and present manufacture craft compatibility do not need expensive equipment, so cost of manufacture can remain on lower level.
The method disclosed in the present is applicable to that all are based on the GaN luminescent device on Sapphire Substrate and other lower thermal conductivity substrate substrates and the manufacturing technology of electronic device.
The present invention will be further described below by embodiment
Novel light-emitting diode basic structure based on gallium nitride material disclosed in this invention is as shown in Figure 1: 1 is the Sapphire Substrate electrode, 2 is resilient coating, 3 is first contact electrode layer, 4 is active area, 5 is second contact electrode layer, 6 and 7 are respectively first and second contact electrodes, and 8 is the Al material of filling in sapphire.
By utilizing dry etching or wet etching that Sapphire Substrate 1 is eroded away needed figure, and fill to go up with the 8 reflectivity height of representing, thermal conductivity far metal material Al greater than the sapphire thermal conductivity, thereby effectively reduce the thermal resistance of GaN base LED, acquisition under big electric current injects, luminous even, reliable and stable GaN based light-emitting diode.Experiment showed, the chip design that utilizes this example, compare than the structure that does not form slotted eye on Sapphire Substrate that thermal resistance reduces by three times at least, luminous efficiency doubles, and its stability indicator---and the life-span will be improved at least one the order of magnitude.
New light-emitting diode basic structure based on gallium nitride material disclosed in this invention is as shown in Figure 2: 1 is the Sapphire Substrate electrode, 2 is resilient coating, 3 is first contact electrode layer, 4 is active area, 5 is second contact electrode layer, 6 and 7 are respectively first and second contact electrodes, and 8 is the Al material of filling in sapphire.
At first, partial buffer layer 2 is etched away until exposing first contact electrode layer 3 then by utilizing dry etching or wet etching that Sapphire Substrate 1 is eroded away needed figure.After having made first contact electrode 6, reflectivity height, the thermal conductivity far metal material Al8 greater than the sapphire thermal conductivity will fill be gone up in the Sapphire Substrate, thereby effectively reduce the thermal resistance of GaN base LED, obtain under big electric current injects luminous even, reliable and stable GaN based light-emitting diode.Experiment showed, the chip design that utilizes this example, compare than the structure that does not form slotted eye on Sapphire Substrate that thermal resistance reduces by three times at least, luminous efficiency doubles, and its stability indicator---and the life-span will be improved at least one the order of magnitude.
New light-emitting diode basic structure based on gallium nitride material disclosed in this invention is as shown in Figure 3: 1 is the Sapphire Substrate electrode, 2 is resilient coating, 3 is first contact electrode layer, 4 is active area, 5 is second contact electrode layer, 6 and 7 are respectively first and second contact electrodes, and 8 is the Al material of filling in sapphire.
At first, then the partial buffer layer 2 and first contact electrode layer 3 are eroded the corrosion depth difference of each slotted eye by utilizing dry etching or wet etching that Sapphire Substrate 1 is eroded away needed figure.After having made first contact electrode 6, reflectivity height, the thermal conductivity far metal material Al8 greater than the sapphire thermal conductivity will fill be gone up in the Sapphire Substrate, thereby effectively reduce the thermal resistance of GaN base LED, obtain under big electric current injects luminous even, reliable and stable GaN based light-emitting diode.Experiment showed, the chip design that utilizes this example, compare than the structure that does not form slotted eye on Sapphire Substrate that thermal resistance reduces by three times at least, luminous efficiency doubles, and its stability indicator---and the life-span will be improved at least one the order of magnitude.
New pattern laser diode basic structure based on gallium nitride material disclosed in this invention is as shown in Figure 4: 1 is saphire substrate material, 2 is resilient coating, 3 is first contact electrode layer, 9 is first ducting layer, 4 is active area, and 10 is second ducting layer, and 5 is second contact electrode layer, 6 and 7 are respectively first and second contact electrodes, and 8 is the Al Heat Conduction Material of filling in sapphire.
By utilizing dry etching or wet etching that Sapphire Substrate 1 is eroded away needed figure, and fill and go up with the metal material Al of 8 thermal conductivity far of representing greater than the sapphire thermal conductivity, thereby effectively reduce the thermal resistance of GaN base LED, acquisition under big electric current injects, luminous even, reliable and stable GaN based laser diode.Experiment showed, the chip design that utilizes this example, compare than the structure that does not form slotted eye on Sapphire Substrate that thermal resistance reduces by three times at least, luminous efficiency doubles, and its stability indicator---and the life-span will be improved at least one the order of magnitude.
New pattern laser diode basic structure based on gallium nitride material disclosed in this invention is as shown in Figure 5: 1 is saphire substrate material, 2 is resilient coating, 3 is first contact electrode layer, 9 is first ducting layer, 4 is active area, and 10 is second ducting layer, and 5 is second contact electrode layer, 6 and 7 are respectively first and second electrodes contacts, and 8 is the Al Heat Conduction Material of filling in sapphire.
By utilizing dry etching or wet etching that Sapphire Substrate 1 is eroded away needed figure, partial buffer layer 2 is etched away until exposing first contact electrode layer 3 then.After having made first contact electrode 6, go up with the metal material Al of 8 thermal conductivity far of representing filling in the Sapphire Substrate greater than the sapphire thermal conductivity, thereby effectively reduce the thermal resistance of GaN base LED, obtain under big electric current injects luminous even, reliable and stable GaN based laser diode.Experiment showed, the chip design that utilizes this example, compare than the structure that does not form slotted eye on Sapphire Substrate that thermal resistance reduces by three times at least, luminous efficiency doubles, and its stability indicator---and the life-span will be improved at least one the order of magnitude.
New pattern laser diode basic structure based on gallium nitride material disclosed in this invention is as shown in Figure 6: 1 is saphire substrate material, 2 is resilient coating, 3 is first contact electrode layer, 9 is first ducting layer, 4 is active area, and 10 is second ducting layer, and 5 is second contact electrode layer, 6 and 7 are respectively first and second electrodes contacts, and 8 is the Al Heat Conduction Material of filling in sapphire.
By utilizing dry etching or wet etching that Sapphire Substrate 1 is eroded away needed figure, then partial buffer layer 2 and part first contact electrode layer 3 are etched away, the corrosion depth of each slotted eye is different.After having made first contact electrode 6, go up with the metal material Al of 8 thermal conductivity far of representing filling in the Sapphire Substrate greater than the sapphire thermal conductivity, thereby effectively reduce the thermal resistance of GaN base LED, obtain under big electric current injects luminous even, reliable and stable GaN based laser diode.Experiment showed, the chip design that utilizes this example, compare than the structure that does not form slotted eye on Sapphire Substrate that thermal resistance reduces by three times at least, luminous efficiency doubles, and its stability indicator---and the life-span will be improved at least one the order of magnitude.
Claims (17)
1. GaN base luminescent device manufacture method, comprise material epitaxy, etching, contact electrode making, it is characterized in that: substrate etching is gone out the figure of needs to form slotted eye by utilizing dry etching or wet etching, and fill to go up reflectivity height, thermal conductivity and be in the thermal conductivity of backing material and the material between the 10000W/mK with the thermal resistance of effective reduction GaN base luminescent device, improve its luminous efficiency.
2. GaN base luminescent device manufacture method, comprise material epitaxy, etching, contact electrode making, it is characterized in that: substrate etching is gone out the figure of needs to form slotted eye by utilizing dry etching or wet etching, then resilient coating corresponding with described slotted eye or resilient coating and the epitaxial loayer that closes on that is positioned on the resilient coating are etched away, fill to go up reflectivity height, thermal conductivity at last and be in the thermal conductivity of backing material and the material between the 10000W/mK thermal resistance, and improve its luminous efficiency with effective reduction GaN base luminescent device.
3. according to any one described GaN base luminescent device manufacture method in claim 1 or 2, it is characterized in that: described slotted eye is distributed in arbitrary position of described substrate, be periodic arrangement or random arrangement, its degree of depth is less than or equal to thickness, the buffer layer thickness of described substrate and is positioned at three sums of an epitaxy layer thickness of closing on the resilient coating, and the degree of depth of each slotted eye is arbitrarily.
4. according to any one described GaN base luminescent device manufacture method in claim 1 or 2, it is characterized in that: described slotted eye figure in the plane along the size of either direction between 0.1 micron-100,000 microns.
5. according to any one described GaN base luminescent device manufacture method in claim 1 or 2, it is characterized in that: described slotted eye be shaped as arbitrary shape.
6. GaN based light-emitting diode structure, it is characterized in that: it contains:
Sapphire Substrate (1);
Resilient coating (2) is positioned on the Sapphire Substrate (1), and this resilient coating (2) is made of GaN base or AlN sill;
First contact electrode layer (3) is positioned on the resilient coating;
Active area (4), it is epitaxially grown In
xGa
yAl
1-x-yN/In
uGa
vAl
1-u-vN, i.e. x+y≤1, u+v≤1, x ≠ u, the luminous zone of single quantum well or Multiple Quantum Well is positioned on part first contact electrode layer (3);
Second contact electrode layer (5) is positioned on the active area;
First contact electrode (6) is positioned on first contact electrode layer (3);
Second contact electrode (7) is positioned on first contact electrode layer (5);
Slotted eye is formed in the Sapphire Substrate (1), and in be filled with thermal conductivity and the metal material between the 10000W/mK (8) that thermal conductivity is in backing material.
7. a kind of GaN based light-emitting diode structure according to claim 6 is characterized in that:
Described active area (4) is positioned on first contact electrode layer (3);
Described first contact electrode (6) is arranged in the metal material (8) of resilient coating (2) and described Sapphire Substrate (1)
On the corresponding and position that is communicated with, and link to each other with first contact electrode layer (3).
8. a kind of GaN based light-emitting diode structure according to claim 6 is characterized in that:
Described active area (4) is positioned on first contact electrode layer (3);
Described first contact electrode (6) is positioned at first contact electrode layer (3) and described Sapphire Substrate (1) and resilient coating
On the position of the metal material (2) (8) correspondence and connection.
9. GaN based light-emitting diode structure according to claim 6, it is characterized in that: described slotted eye is distributed in arbitrary position of described substrate, be periodic arrangement or random arrangement, its degree of depth is less than or equal to thickness, the buffer layer thickness of described substrate and is positioned at three sums of an epitaxy layer thickness of closing on the resilient coating, and the degree of depth of each slotted eye is arbitrarily.
10. GaN based light-emitting diode structure according to claim 6 is characterized in that: it is characterized in that: described slotted eye figure in the size of substrate plane upper edge either direction between 0.1 micron-100,000 microns.
11. GaN based light-emitting diode structure according to claim 6 is characterized in that: described slotted eye be shaped as arbitrary shape.
12. a GaN based laser diode structure is characterized in that:
Sapphire Substrate (1);
Resilient coating (2) is positioned on the Sapphire Substrate (1), and this resilient coating (2) is made of GaN base or AlN sill;
First contact electrode layer (3) is positioned on the resilient coating (2);
First ducting layer (9) is positioned on part first contact electrode layer (3);
Active area (4), it is epitaxially grown In
xGa
yAl
1-x-yN/In
uGa
vAl
1-u-vN, i.e. x+y≤1, u+v≤1, x ≠ u, the luminous zone of single quantum well or Multiple Quantum Well is positioned on first ducting layer (9);
Second ducting layer (10) is positioned on the active area (4);
Second contact electrode layer (5) is positioned on second ducting layer (10);
First contact electrode (6) is positioned on first contact electrode layer (3);
Second contact electrode (7) is positioned on first contact electrode layer (5);
Slotted eye is formed in the Sapphire Substrate (1), and in be filled with thermal conductivity and the metal material between the 10000W/mK (8) that thermal conductivity is in backing material.
13. a kind of GaN based laser diode structure according to claim 12 is characterized in that:
Described first ducting layer (9) is positioned on first contact electrode layer (3);
Described first contact electrode (6) is arranged on the corresponding and position that is communicated with of the metal material (8) of resilient coating (2) and described Sapphire Substrate (1), and links to each other with first contact electrode layer (3).
14. a kind of GaN based laser diode structure according to claim 12 is characterized in that:
Described first ducting layer (9) is positioned on first contact electrode layer (3);
Described first contact electrode (6) is arranged on the corresponding and position that is communicated with of the metal material (8) of first contact electrode layer (3) and described Sapphire Substrate (1) and resilient coating (2).
15. GaN based laser diode structure according to claim 12, it is characterized in that: described slotted eye is distributed in arbitrary position of described substrate, be periodic arrangement or random arrangement, its degree of depth is less than or equal to thickness, the buffer layer thickness of described substrate and is positioned at three sums of an epitaxy layer thickness of closing on the resilient coating, and the degree of depth of each slotted eye is arbitrarily.
16. GaN based laser diode structure according to claim 12 is characterized in that: described slotted eye figure in the size of substrate plane upper edge either direction between 0.1 micron-100,000 microns.
17. GaN based laser diode structure according to claim 12 is characterized in that: described slotted eye be shaped as arbitrary shape.
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| US20080061306A1 (en) * | 2006-09-12 | 2008-03-13 | Hong Kong Applied Science and Technology Research Institute Company Limited | Semiconductor light emitting device |
| CN102082222A (en) * | 2009-12-01 | 2011-06-01 | 鸿富锦精密工业（深圳）有限公司 | Light emitting diode chip and manufacture method thereof |
| CN101920184B (en) * | 2010-08-06 | 2012-06-06 | 清华大学 | Photocatalysis biochemical device based on nitride light-emitting diode and preparation method thereof |
| CN112018198A (en) * | 2019-05-31 | 2020-12-01 | 东泰高科装备科技有限公司 | Solar cell substrate structure, solar cell and preparation method thereof |
| CN111129942A (en) * | 2019-12-31 | 2020-05-08 | 长春理工大学 | Device-matched efficient heat-dissipation semiconductor substrate and preparation method thereof |
| CN113823719B (en) * | 2021-08-20 | 2023-09-22 | 华灿光电（浙江）有限公司 | Light emitting diode chip for enhancing side light intensity and manufacturing method thereof |
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| US6015979A (en) * | 1997-08-29 | 2000-01-18 | Kabushiki Kaisha Toshiba | Nitride-based semiconductor element and method for manufacturing the same |
| JP2000331947A (en) * | 1999-03-17 | 2000-11-30 | Mitsubishi Cable Ind Ltd | Semiconductor base material and manufacture thereof |
| CN1571174A (en) * | 2003-07-16 | 2005-01-26 | 璨圆光电股份有限公司 | Method for manufacturing nitride luminous apparatus |
| CN1564331A (en) * | 2004-04-05 | 2005-01-12 | 清华大学 | Method of mfg. GaN-base LED |
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