CN100356594C - Method for improving ohmic contact alloy of gallium nitrate based semiconductor LED - Google Patents
Method for improving ohmic contact alloy of gallium nitrate based semiconductor LED Download PDFInfo
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- CN100356594C CN100356594C CNB2004100773379A CN200410077337A CN100356594C CN 100356594 C CN100356594 C CN 100356594C CN B2004100773379 A CNB2004100773379 A CN B2004100773379A CN 200410077337 A CN200410077337 A CN 200410077337A CN 100356594 C CN100356594 C CN 100356594C
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Abstract
The present invention relates to a method for improving the ohmic contact alloy of a gallium nitrate based semiconductor LED, which comprises the following steps: step 1, the surface of an epitaxial wafer of a prepared Ni/ Au transparent electrode is treated; step 2, the temperature of an annealing furnace is constantly set at temperature of 545 to 555 DEG C in a flowing pure nitrogen environment, and the epitaxial wafer is alloyed for 10 to 15 minutes; step 3, the epitaxial wafer is taken out to be cooled and is kept for 10 minutes after the temperature of the epitaxial wafer reaches indoor temperature; step 4, the epitaxial wafer is secondarily alloyed after the epitaxial wafer is cooled, under an oxygen-containing flow, the temperature of the annealing furnace is constantly set at temperature of 545 to 555 DEG C, the epitaxial wafer is alloyed for 5 to 20 minutes, and the epitaxial wafer is taken out to be cooled. The epitaxial wafer is orderly alloyed in the pure nitrogen environment and under the oxygen-containing flow by two times by the method for improving the ohmic contact alloy of the gallium nitrate based semiconductor LED of the present invention, so the present invention guarantees high luminous efficiency, small contact resistance, long service life and good antistatic and refractory ability of LED.
Description
Technical field
The present invention relates to optoelectronic areas, relate in particular to a kind of alloy method of improving the gallium nitrate based semiconductor LED ohmic contact.
Background technology
Gallium nitride (GaN) sill has excellent chemistry and physical stability, can realize the emission of blue light and purple light, has broad application prospects at optoelectronic areas.At present, the research of GaN base semiconductor LED (LED) has obtained many achievements and has phased out into industrialization production.But no matter be that research or industrialization production all face some difficult problems, well behaved LED needs good Ohmic contact, and a key of making the GaN base LED chip is to obtain good P type ohmic contact.Activate difficulty because P type Mg mixes, its activation energy is 170meV, and the metal material of alternative in addition big work function is very limited, is the comparison difficulty so make Ohm contact electrode technology on P type GaN.Present ubiquitous P type Ohmic electrode is Ni/Au, and that is because its good light transmittance energy and electric property.Surface treatment before the deposit and the alloy after the deposit are the means of the reduction contact resistance used always.
Alloy method commonly used at present mainly contains two kinds: the one, and the following 550 ℃ of left and right sides alloys of nitrogen atmosphere are about 10 minutes; The 2nd, the following 550 ℃ of left and right sides alloys of nitrogen oxygen atmosphere atmosphere are about 10 minutes.Usually, the life-span of the led chip that method one is produced is long, but luminous efficiency is low, and specific contact resistivity is big; The led chip luminous efficiency height that method two is produced, specific contact resistivity is little, but life-span and antistatic, all decline to some extent of heat-resisting ability by the method for alloy under the oxygen atmosphere, can reduce to 4 * 10 with the specific contact resistivity of Au/Ni/P-GaN
-6Ω/cm
2
Summary of the invention
The technical problem to be solved in the present invention is, at the above-mentioned defective of prior art, provides a kind of alloy method of improving the gallium nitrate based semiconductor LED ohmic contact.
The technical solution adopted for the present invention to solve the technical problems is: construct a kind of alloy method of improving the gallium nitrate based semiconductor LED ohmic contact, it is characterized in that, comprise the steps:
A) epitaxial wafer that will carry out the Ni/Au transparency electrode carries out surface treatment;
B) in the pure nitrogen gas environment that flows, with the temperature constant of annealing furnace at 550 ± 5 ℃, alloy 10～15 minutes;
C) take out epitaxial wafer and cool off, after the temperature of epitaxial wafer reaches room temperature, kept 10 minutes;
D) after the cooling, under oxygen flow, the temperature constant of annealing furnace at 550 ± 5 ℃, is carried out alloy 5-20 minute second time, take out and cool off.
The alloy method of improving the gallium nitrate based semiconductor LED ohmic contact of the present invention, in steps d, the concrete composition of oxygen flow is oxygen and nitrogen, oxygen nitrogen ratio 3: 7.
The alloy method of improving the gallium nitrate based semiconductor LED ohmic contact of the present invention, in step c, whole cooling step required time is 20～60 minutes.
The alloy method of improving the gallium nitrate based semiconductor LED ohmic contact of the present invention, in steps d, carrying out for the second time, the time of alloy is 5 minutes.
The alloy method of improving the gallium nitrate based semiconductor LED ohmic contact of the present invention, in steps d, carrying out for the second time, the time of alloy is 10 minutes.
The alloy method of improving the gallium nitrate based semiconductor LED ohmic contact of the present invention, in steps d, carrying out for the second time, the time of alloy is 15 minutes.
The alloy method of improving the gallium nitrate based semiconductor LED ohmic contact of the present invention, in steps d, carrying out for the second time, the time of alloy is 20 minutes.
The alloy method of improving the gallium nitrate based semiconductor LED ohmic contact of the present invention, in steps d, carrying out for the second time, the time of alloy is 8 minutes.
The invention has the beneficial effects as follows, because the alloy method of improving the gallium nitrate based semiconductor LED ohmic contact of the present invention has successively been carried out twice alloy in the environment of purity nitrogen and under oxygen flow.When guaranteeing that lumination of light emitting diode efficient height, specific contact resistivity are little, can also guarantee that the life-span of light-emitting diode is long, antistatic heat-resisting ability is good.
Embodiment
A kind of preferred enforcement of the step of the alloy method of improving the gallium nitrate based semiconductor LED ohmic contact of the present invention is as follows:
A) epitaxial wafer that will carry out the Ni/Au transparency electrode carries out surface treatment;
B) in the pure nitrogen gas environment that flows, with the temperature constant of annealing furnace at 550 ± 5 ℃, alloy 10～15 minutes;
C) take out epitaxial wafer and cool off, after the temperature of epitaxial wafer reaches room temperature, kept 10 minutes; Whole cooling step required time is 20-60 minute.Thereby firmly the alloy effect of step b) makes that the life-span of LED is longer.
D) after the cooling, under oxygen flow, the temperature constant of annealing furnace at 550 ± 5 ℃, is carried out alloy 5 minutes second time, take out and cool off; The concrete composition of oxygen flow is oxygen and nitrogen, oxygen nitrogen ratio 3: 7.
Second kind of execution mode of the present invention be, in steps d, carries out for the second time that the time of alloy can also be 10 minutes, and other steps are identical with embodiment's 1.
The third execution mode of the present invention is, in steps d, carries out for the second time that the time of alloy is 15 minutes, and other steps are identical with embodiment's 1.
The 4th kind of execution mode of the present invention be, in steps d, carries out for the second time that the time of alloy is 20 minutes, and other steps are identical with embodiment's 1.
The 5th kind of execution mode of the present invention be, in steps d, carries out for the second time that the time of alloy is 8 minutes, and other steps are identical with embodiment's 1.
Claims (8)
1, a kind of alloy method of improving the gallium nitrate based semiconductor LED ohmic contact is characterized in that, comprises the steps:
A) epitaxial wafer that will carry out the Ni/Au transparency electrode carries out surface treatment;
B) in the pure nitrogen gas environment that flows, with the temperature constant of annealing furnace at 550 ± 5 ℃, alloy 10～15 minutes;
C) take out epitaxial wafer and cool off, after the temperature of epitaxial wafer reaches room temperature, kept 10 minutes;
D) after the cooling, under oxygen flow, the temperature constant of annealing furnace at 550 ± 5 ℃, is carried out alloy 5-20 minute second time, take out and cool off.
2, the alloy method of improving the gallium nitrate based semiconductor LED ohmic contact according to claim 1 is characterized in that, in step d), the concrete composition of oxygen flow is oxygen and nitrogen, oxygen nitrogen ratio 3: 7.
3, the alloy method of improving the gallium nitrate based semiconductor LED ohmic contact according to claim 1 is characterized in that, in step c), whole cooling step required time is 20-60 minute.
According to any one described alloy method of improving the gallium nitrate based semiconductor LED ohmic contact among the claim 1-3, it is characterized in that 4, in the step d), carrying out for the second time, the time of alloy is 5 minutes.
According to any one described alloy method of improving the gallium nitrate based semiconductor LED ohmic contact among the claim 1-3, it is characterized in that 5, in the step d), carrying out for the second time, the time of alloy is 10 minutes.
According to any one described alloy method of improving the gallium nitrate based semiconductor LED ohmic contact among the claim 1-3, it is characterized in that 6, in the step d), carrying out for the second time, the time of alloy is 15 minutes.
According to any one described alloy method of improving the gallium nitrate based semiconductor LED ohmic contact among the claim 1-3, it is characterized in that 7, in the step d), carrying out for the second time, the time of alloy is 20 minutes.
According to any one described alloy method of improving the gallium nitrate based semiconductor LED ohmic contact among the claim 1-3, it is characterized in that 8, in the step d), carrying out for the second time, the time of alloy is 8 minutes.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100773379A CN100356594C (en) | 2004-12-08 | 2004-12-08 | Method for improving ohmic contact alloy of gallium nitrate based semiconductor LED |
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| CNB2004100773379A CN100356594C (en) | 2004-12-08 | 2004-12-08 | Method for improving ohmic contact alloy of gallium nitrate based semiconductor LED |
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| CN1787235A CN1787235A (en) | 2006-06-14 |
| CN100356594C true CN100356594C (en) | 2007-12-19 |
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| CNB2004100773379A Expired - Fee Related CN100356594C (en) | 2004-12-08 | 2004-12-08 | Method for improving ohmic contact alloy of gallium nitrate based semiconductor LED |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009026749A1 (en) * | 2007-08-31 | 2009-03-05 | Lattice Power (Jiangxi) Corporation | Method for fabricating a low-resistivity ohmic contact to a p-type iii-v nitride semiconductor material at low temperature |
| CN101369599B (en) * | 2008-07-11 | 2011-02-16 | 北京大学 | Ohm contact of gallium nitride base device and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09106959A (en) * | 1995-10-13 | 1997-04-22 | Shin Etsu Handotai Co Ltd | Ohmic electrode of compound semiconductor and formation thereof |
| JPH10242074A (en) * | 1997-02-21 | 1998-09-11 | Hewlett Packard Co <Hp> | Manufacturing method of nitride semiconductor element |
| US6008539A (en) * | 1995-06-16 | 1999-12-28 | Toyoda Gosei Co., Ltd. | Electrodes for p-type group III nitride compound semiconductors |
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2004
- 2004-12-08 CN CNB2004100773379A patent/CN100356594C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6008539A (en) * | 1995-06-16 | 1999-12-28 | Toyoda Gosei Co., Ltd. | Electrodes for p-type group III nitride compound semiconductors |
| JPH09106959A (en) * | 1995-10-13 | 1997-04-22 | Shin Etsu Handotai Co Ltd | Ohmic electrode of compound semiconductor and formation thereof |
| JPH10242074A (en) * | 1997-02-21 | 1998-09-11 | Hewlett Packard Co <Hp> | Manufacturing method of nitride semiconductor element |
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Owner name: SHENYANG FANGDA SEMICONDUCTOR LIGHTING CO., LTD. Free format text: FORMER OWNER: SHENZHEN FANGDA GUOKE PHOTOELECTRIC TECHNOLOGY CO., LTD. Effective date: 20110908 |
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Effective date of registration: 20110908 Address after: 110168 Shenyang Hunnan New District Wende Street No. 6 Patentee after: Shenzhen Fangda Guoke Optoelectronic Technology Co., Ltd. Address before: 518055 Guangdong city of Shenzhen province Nanshan District Xili, Longjing Fangda Patentee before: Shenzhen Fangda Guoke Optical Electronic Technology Co., Ltd. |
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