CN100346490C - A preparation method for slice type thermoelectric converter - Google Patents
A preparation method for slice type thermoelectric converter Download PDFInfo
- Publication number
- CN100346490C CN100346490C CNB2004100254004A CN200410025400A CN100346490C CN 100346490 C CN100346490 C CN 100346490C CN B2004100254004 A CNB2004100254004 A CN B2004100254004A CN 200410025400 A CN200410025400 A CN 200410025400A CN 100346490 C CN100346490 C CN 100346490C
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- type
- rectangular recess
- lower plate
- type joint
- preparation
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 238000006243 chemical reaction Methods 0.000 claims description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 10
- 239000003292 glue Substances 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000012530 fluid Substances 0.000 claims description 3
- 239000000565 sealant Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 238000007373 indentation Methods 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052802 copper Inorganic materials 0.000 abstract description 5
- 239000010949 copper Substances 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 2
- 238000003466 welding Methods 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000004907 flux Effects 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000010257 thawing Methods 0.000 description 1
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- Measuring Temperature Or Quantity Of Heat (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The present invention discloses a method for preparing a sheet type thermoelectric converting device. The device comprises an upper plate, an N-type semiconductor thermoelectric material layer, a P-type semiconductor thermoelectric material layer and a lower plate, which are orderly stacked. N-type nodes and P-type nodes of the semiconductor thermoelectric material layers are alternately arranged at intervals in the longitudinal direction and the transverse direction of the plane surface. A series connection is formed by utilizing the upper plate and the lower plate. The N-type nodes and the P-type nodes of the semiconductor thermoelectric material layers arranged in grooves are solidified and connected by conductive fulmargin by adopting the grooves which are arranged in the upper plate and the lower plate by the preparation method of the present invention. Because the used conductive fulmargin can be resistant to low temperatures and high temperatures between-200 DEG C to 400 DEG C, the connection is firm. The reliable work of the device between-200 DEG C to 400 DEG C in various places can be guaranteed. The defects of welding connection of the prior art by a copper sheet and easy disconnection of a welding point are overcome.
Description
Technical field
The present invention relates to the preparation method of sheet type thermoelectric conversion device, belong to technical field of thermoelectric conversion.
Background technology
Thermoelectric conversion device be a kind of be thermal power transfer the device of electric energy.Be linked to be the closed-loop path with two kinds of different metals or with semi-conductive N type and P type semiconductor thermoelectric material, when the temperature of two joints not simultaneously, the loop will produce electric current, Sai Beier effect that Here it is.Utilize this principle can prepare thermoelectric conversion device.
Traditional sheet type thermoelectric conversion device comprises the upper plate of repeatedly putting successively, N type and P type semiconductor thermoelectric material layer and lower plate, N type joint and P type joint on N type and the P type semiconductor thermoelectric material layer are arranged (as Fig. 4) in the vertical and horizontal alternate intervals on plane, the surface distributed of lower plate be useful on the semi-conductor thermoelectric material layer on N type joint and the rectangle nickel dam (as Fig. 3) that is connected of the end that saves of P type, the surface distributed of upper plate has the other end that saves with N type joint and P type to be connected, and make N type joint and P type on the semi-conductor thermoelectric material layer save the rectangle nickel dam (as Fig. 5) that connects into series circuit, at present, on, lower plate is connected with N type joint and P type joint, what adopt is last, cover copper sheet on the nickel dam of lower plate respectively, at copper sheet surface coverage solder flux, be weldingly connected by solder flux.With the device of this connected mode connection, when temperature surpassed the fusing point of solder flux, the solder flux thawing caused N type joint and P type joint and copper sheet to break away from, and when being lower than-100 ℃ in temperature, is easy to generate the disengaging of N type joint and P type joint and copper sheet owing to the difference of shrinkage.
Summary of the invention
The object of the invention provides a kind of preparation method of sheet type thermoelectric conversion device, to improve high temperature resistant and performance low temperature, makes it the various places of reliability service between-200 ℃～400 ℃.
The method for preparing the sheet type thermoelectric conversion device of the present invention may further comprise the steps:
1) scribes on the surface of lower plate and be used to connect the rectangular recess that N type joint and P type save an end, scribe the rectangular recess that is used to connect the N type joint and the P type joint other end on the surface of upper plate, the rectangular recess of upper and lower plate surface distributed is so that the N type of semi-conductor thermoelectric material layer saves and the formation of P type joint is connected in series;
2) in the rectangular recess of lower plate, inject conductive silver glue, the end that the N type saves and the P type saves of semi-conductor thermoelectric material layer and two lead-in wires of first and last that are connected in series are inserted in the groove, be frozen into one;
3) in the rectangular recess of upper plate, injecting conductive silver glue, with step 2) the N type joint that is frozen into a body component of gained and the other end that the P type saves insert the upper plate groove, is frozen into one;
4) being coated with fluid sealant around the global facility that makes seals.
Above-mentioned conductive silver glue adopts the elargol of ability-200 ℃～400 ℃ of temperature ranges.
The present invention's employing is provided with groove and solidifies the N type joint and the P type that connect the semi-conductor thermoelectric material layer that places groove by conductive silver glue at upper and lower plate and saves, because used conductive silver glue ability-200 ℃～low temperature and high temperature between 400 ℃, thereby be connected firmly, can guarantee the various places reliably working of device between-200 ℃～400 ℃.
Description of drawings
Fig. 1 is the schematic diagram of sheet type thermoelectric conversion device;
Fig. 2 is the D-D profile of Fig. 1;
Fig. 3 is a lower plate surface groove distribution schematic diagram;
Fig. 4 is N type and P type semiconductor thermoelectric material layer distribution schematic diagram;
Fig. 5 is a upper panel surface groove distribution schematic diagram.
Embodiment
The sheet type thermoelectric conversion device of the present invention's preparation as shown in Figure 1, it comprises upper plate 1, N type and P type semiconductor thermoelectric material layer 3 and the lower plate 5 of repeatedly putting successively, the N type joint and the P type joint of semi-conductor thermoelectric material layer are arranged (see figure 4) in the vertical and horizontal alternate intervals on plane, are connected in series by upper plate and lower plate.The preparation method of this sheet type thermoelectric conversion device may further comprise the steps:
1) scribes on the surface of lower plate and be used to connect the rectangular recess 7 that N type joint and P type save an end, scribe the rectangular recess 8 that is used to connect the N type joint and the P type joint other end on the surface of upper plate, the rectangular recess of upper and lower plate surface distributed is so that the N type of semi-conductor thermoelectric material layer saves and the formation of P type joint is connected in series;
2) in the rectangular recess of lower plate, inject conductive silver glue 4, the end that the N type saves and the P type saves of semi-conductor thermoelectric material layer and two lead-in wires 6 of first and last that are connected in series are inserted in the groove, be frozen into one;
3) in the rectangular recess of upper plate, injecting conductive silver glue 2, with step 2) the N type joint that is frozen into a body component of gained and the other end that the P type saves insert the upper plate groove, is frozen into one;
4) being coated with fluid sealant around the global facility that makes seals.
In the diagram instantiation, the rectangular recess that is distributed in the lower plate surface is a square indentations except that the groove that connects lead-in wire 6, all the other are the rectangular recess (see figure 3), the length of rectangular recess is the spacing sum of its double-width and two rectangular recess, and N type joint and P type joint lay respectively at the two ends of rectangular recess.The rectangular recess of upper panel surface is the rectangular recess (see figure 5), and the length of rectangular recess is the spacing sum of its double-width and two rectangular recess, and N type joint and P type joint lay respectively at the two ends of rectangular recess.Spacing between two rectangular recess of above-mentioned upper and lower plate is provided with as required, and generally making the spacing between the rectangular recess is 0.03cm～0.3cm.
Upper plate and lower plate adopt the heat-conducting insulation material that can carry out corrosion processing, make as resistant to elevated temperatures quartz glass.
Claims (5)
1. the preparation method of a sheet type thermoelectric conversion device, this device comprises upper plate (1), N type and P type semiconductor thermoelectric material layer (3) and the lower plate (5) of repeatedly putting successively, the N type joint and the P type joint of semi-conductor thermoelectric material layer are arranged in the vertical and horizontal alternate intervals on plane, it is characterized in that the preparation method may further comprise the steps:
1) scribes on the surface of lower plate and be used to connect the rectangular recess (7) that N type joint and P type save an end, scribe the rectangular recess (8) that is used to connect the N type joint and the P type joint other end on the surface of upper plate, the rectangular recess of upper and lower plate surface distributed is so that the N type of semi-conductor thermoelectric material layer saves and the formation of P type joint is connected in series;
2) in the rectangular recess of lower plate, inject conductive silver glue (4), the end that the N type saves and the P type saves of semi-conductor thermoelectric material layer and two lead-in wires of first and last (6) that are connected in series are inserted in the groove, be frozen into one;
3) in the rectangular recess of upper plate, injecting conductive silver glue (2), with step 2) the N type joint that is frozen into a body component of gained and the other end that the P type saves insert the upper plate groove, is frozen into one;
4) being coated with fluid sealant around the global facility that makes seals;
Above-mentioned conductive silver glue is the elargol of ability-200 ℃～400 ℃ of temperature ranges.
2. the preparation method of sheet type thermoelectric conversion device according to claim 1, the rectangular recess that it is characterized in that being distributed in upper panel surface is a rectangular recess, the length of rectangular recess is the spacing sum of its double-width and two rectangular recess, and N type joint and P type joint lay respectively at the two ends of rectangular recess.
3. the preparation method of sheet type thermoelectric conversion device according to claim 1, it is square indentations that the rectangular recess that it is characterized in that being distributed in the lower plate surface removes the groove that connects lead-in wire, all the other are rectangular recess, the length of rectangular recess is the spacing sum of its double-width and two rectangular recess, and N type joint and P type joint lay respectively at the two ends of rectangular recess.
4. according to the preparation method of claim 2 or 3 described sheet type thermoelectric conversion devices, it is characterized in that the spacing between the rectangular recess is 0.3mm～3mm.
5. according to the preparation method of claim 1 or 2 or 3 described sheet type thermoelectric conversion devices, it is characterized in that upper plate and lower plate are quartz glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100254004A CN100346490C (en) | 2004-06-21 | 2004-06-21 | A preparation method for slice type thermoelectric converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100254004A CN100346490C (en) | 2004-06-21 | 2004-06-21 | A preparation method for slice type thermoelectric converter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1595674A CN1595674A (en) | 2005-03-16 |
| CN100346490C true CN100346490C (en) | 2007-10-31 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100254004A Expired - Fee Related CN100346490C (en) | 2004-06-21 | 2004-06-21 | A preparation method for slice type thermoelectric converter |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104134746B (en) * | 2014-08-08 | 2017-08-22 | 王林 | A kind of semiconductor temperature difference sensing power-generating chip and preparation method thereof |
| CN105006517B (en) * | 2015-06-05 | 2017-12-12 | 金安君 | A kind of multi-cascade thermo-electric device and its preparation method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0951125A (en) * | 1995-08-10 | 1997-02-18 | Sharp Corp | Method for manufacturing thermoelectric conversion device |
| CN1148443A (en) * | 1994-05-16 | 1997-04-23 | 时至准钟表股份有限公司 | Mfr. of thermoelectric power generation unit |
| CN1211342A (en) * | 1995-10-03 | 1999-03-17 | 米尔科公司 | Fabrication of thermoelectric modules and solder for such fabrication |
| CN1286808A (en) * | 1998-03-10 | 2001-03-07 | 爱德华·塞拉斯 | Method and apparatus for manufacturing a plurality of thermocouples and thermoelectric converter obtained thereby |
| JP2002353525A (en) * | 2001-05-24 | 2002-12-06 | Daikin Ind Ltd | Thermoelectric conversion device and manufacturing method therefor |
-
2004
- 2004-06-21 CN CNB2004100254004A patent/CN100346490C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1148443A (en) * | 1994-05-16 | 1997-04-23 | 时至准钟表股份有限公司 | Mfr. of thermoelectric power generation unit |
| JPH0951125A (en) * | 1995-08-10 | 1997-02-18 | Sharp Corp | Method for manufacturing thermoelectric conversion device |
| CN1211342A (en) * | 1995-10-03 | 1999-03-17 | 米尔科公司 | Fabrication of thermoelectric modules and solder for such fabrication |
| CN1286808A (en) * | 1998-03-10 | 2001-03-07 | 爱德华·塞拉斯 | Method and apparatus for manufacturing a plurality of thermocouples and thermoelectric converter obtained thereby |
| JP2002353525A (en) * | 2001-05-24 | 2002-12-06 | Daikin Ind Ltd | Thermoelectric conversion device and manufacturing method therefor |
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| Publication number | Publication date |
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| CN1595674A (en) | 2005-03-16 |
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Granted publication date: 20071031 Termination date: 20100621 |