CN109980059A - A kind of electrode has the LED chip structure of opening - Google Patents
A kind of electrode has the LED chip structure of opening Download PDFInfo
- Publication number
- CN109980059A CN109980059A CN201910307212.7A CN201910307212A CN109980059A CN 109980059 A CN109980059 A CN 109980059A CN 201910307212 A CN201910307212 A CN 201910307212A CN 109980059 A CN109980059 A CN 109980059A
- Authority
- CN
- China
- Prior art keywords
- electrode
- opening
- led chip
- chip structure
- epitaxial structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004891 communication Methods 0.000 claims description 2
- 238000003466 welding Methods 0.000 abstract description 28
- 150000001875 compounds Chemical class 0.000 abstract description 17
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 6
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract description 3
- 238000012800 visualization Methods 0.000 abstract description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 16
- 238000010586 diagram Methods 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The present invention provides a kind of LED chip structure of the electrode with opening, electrode including epitaxial structure and on the epitaxial structure, the top of the electrode is arranged close to the epitaxial structure, the bottom of the electrode is arranged far from the epitaxial structure, and the electrode is equipped at least one opening extended from the bottom of the electrode to the top of the electrode.Extra welding compound is adsorbed by the opening set by electrode, to avoid occurring globoid in welding process, therefore semiconductor chip is not in effectively increase the flatness of light-emitting surface because of the phenomenon that offset caused by welding and inclination.Especially on display and visualization product, have many advantages, such as that light emission direction is consistent, colour mixture is uniform.
Description
Technical field
The present invention relates to the LED chip structures that emitting semiconductor technical field more particularly to a kind of electrode have opening.
Background technique
Light emitting diode be widely used in the advantages that its service life length, good luminous performance, energy conservation and environmental protection life lighting,
The fields such as signal lamp, outdoor panchromatic large display screen.Existing light-emitting diode chip for backlight unit is usually made of epitaxial structure and electrode,
Electrode is welded by the welding compounds such as tin cream and external circuit.
However, welding compound is by high temperature when welding when light-emitting diodes pipe size is smaller (such as Mini LED and Micro LED)
It is melted into liquid, the surface tension of light emitting diode is especially big, and extra welding compound easily becomes the globoid of protrusion, to lead
Photoluminescence diode is easy to appear the problems such as offset, inclination.
Summary of the invention
In view of this, it is an object of the present invention to: a kind of LED chip structure of the electrode with opening is provided, so that LED chip
The problems such as being not in offset, inclination in welding.
To achieve the above object, the technical solution adopted by the present invention are as follows:
A kind of electrode has the LED chip structure of opening, and the electrode including epitaxial structure and on the epitaxial structure is described
The top of electrode is arranged close to the epitaxial structure, and the bottom of the electrode is arranged far from the epitaxial structure, and the electrode is set
The opening for thering is at least one to extend from the bottom of the electrode to the top of the electrode.
Preferably, the opening and the side wall of the electrode have distance.
Preferably, the opening includes in round and polygon along the section figure for being parallel to the electrode base direction
It is at least one.
Preferably, the opposite side wall of electrode described in the open communication.
Preferably, the opening includes trapezoidal, triangle, semicircle along the section figure perpendicular to the electrode base direction
At least one of shape and ellipse.
Preferably, the cross-sectional area of the opening is gradually contracted from the bottom of the electrode to the top-direction of the electrode
It is small.
Preferably, the quantity of the opening is two or more, and more than two openings are uniform and are spaced apart.
Preferably, the opening has coarse side wall.
Preferably, one end of the bottom far from the electrode that is open and the top of the electrode have distance.
Preferably, described be open extends to the top of the electrode from the bottom of the electrode.
As can be seen from the above description, electrode of the invention has the LED chip structure of opening, pass through the opening set by electrode
Extra welding compound is adsorbed, to avoid occurring globoid in welding process, therefore semiconductor chip be not in because
The phenomenon that offset caused by welding and inclination, effectively increase the flatness of light-emitting surface.Especially in display and visualization product
On, have many advantages, such as that light emission direction is consistent, colour mixture is uniform.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is the schematic diagram that the electrode of the embodiment of the present invention has the LED chip structure of opening；
Fig. 2-9 is the structural schematic diagram of the electrode of the embodiment of the present invention；
Figure 10 is the schematic diagram that the electrode of the embodiment of the present invention one has the LED chip structure of opening；
Figure 11 is the schematic diagram that the electrode of the embodiment of the present invention two has the LED chip structure of opening；
Figure 12 is the corresponding structural representation of preparation method that the electrode of the embodiment of the present invention four has the LED chip structure of opening
Figure；
Figure 13 is the corresponding structural representation of preparation method that the electrode of the embodiment of the present invention five has the LED chip structure of opening
Figure.
1, epitaxial structure；2, electrode；21, it is open；3, photoresist layer.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
As shown in Figure 1, the embodiment of the present invention provides a kind of LED chip structure of the electrode with opening, including epitaxial structure 1
With the electrode 2 being set on the epitaxial structure 1, the electrode 2 includes the bottom and top being oppositely arranged, and the connection bottom
The side wall in portion and top.
The LED chip structure can be flip chip structure, formal dress chip structure, vertical chip structure or other LED
Chip structure.The electrode 2 is including but not limited to cylindric, cube shape, hemisphere shape.
The top of the electrode 2 is arranged close to the epitaxial structure 1, and the bottom of the electrode 2 is far from the epitaxial structure 1
Setting, wherein the electrode 2 is equipped at least one opening extended from the bottom of the electrode 2 to the top of the electrode 2
21。
Further, the opening 21 has distance with the side wall of the electrode 2, in poroid, is illustrated in figure 2 electrode
Bottom schematic view.On the one hand, extra welding compound is adsorbed into poroid opening 21, so that semiconductor chip welding is smooth,
On the other hand, it is used as stability column after the welding compound solidification in poroid opening 21, effectively prevent semiconductor chip to deviate, so that core
Piece is accurately positioned.Optionally, the opening 21 can be triangle along the section figure for the bottom direction for being parallel to the electrode 2
The polygons such as shape, rectangular, hexagon, or round or other figures with closed area, being illustrated in figure 3 opening is respectively
The electrode base schematic diagram of rectangular, triangle, pentagon and hexagon.The opening 21 can also be the combination of former figures.
Further, the opposite side wall of the 21 connection electrode 2 of opening, it is in the form of slot.As shown in Figure 4.Wherein Fig. 4 is left
Figure is the bottom schematic view of cylindrical electrode 2, and Fig. 4 right figure is the bottom schematic view of cube shape electrode 2.Opening 21 is made into channel-shaped,
Other than it will not generate offset and inclination when semiconductor can be made to weld, also have the advantages that manufacture craft is simple.Optionally, slot
The opening 21 of shape includes trapezoidal, triangle, semicircle and ellipse along the section figure perpendicular to 2 bottom direction of electrode
One of shape or multiple combinations, wherein cross-sectional area of the opening 21 close to 2 top of electrode is less than the opening 21
Cross-sectional area close to 2 bottom of electrode is illustrated in figure 5 the electrode side of opening respectively trapezoidal, triangle and ellipse
Wall schematic diagram.
Further, it is described opening 21 cross-sectional area from the bottom of the electrode 2 to the top-direction of the electrode 2 by
Tapered small, i.e. the side wall of opening 21 is oblique.To increase the contact area of welding compound Yu electrode 2, welding compound is improved
With the mutual grip of electrode 2, and 21 size of opening close to 2 bottom of electrode is larger, and absorption of being more convenient for is set to electrode 2 bottom
Welding compound.
Further, the quantity of the opening 21 is two or more, more than two 21 uniform and intervals point that are open
Cloth, if Fig. 6 left figure show the electrode base schematic diagram equipped with multiple pore-like openings, as Fig. 6 right figure is shown equipped with multiple slots
The electrode sidewall schematic diagram of shaped opening.
By be arranged it is multiple uniformly and the opening 21 that is spaced apart, welding compound can by uniform adsorption, LED chip structure by
Power is uniform, further improves the planarization of LED chip structure welding, and makees jointly after the welding compound solidification in multiple openings 21
For LED chip structure, ensure that LED chip structure will not generate offset to a greater extent.The opening 21 is described in connection
When the opposite side wall of electrode 2 is arranged, multiple openings 21 can be parallel to each other, and be evenly spaced on as shown in 7 left figures, can also hand over
Fork distribution, shown in right figure as shown in Figure 7, for the absorption uniformity for improving welding compound, by electrode 2 after 21 cross-distributions of the opening
It is divided into the identical region of multiple areas.
Further, the opening 21 has coarse side wall.
Coarse side wall setting, the contact surface of welding compound and electrode 2 further increases, to further improve welding compound
Adsorptivity and the stability of welding, especially in small size semiconductor chip using upper, effect is more significant.
Further, it is described opening 21 bottoms far from the electrode 2 one end and the electrode 2 top have away from
From as shown in Figure 8.
Further, the opening 21 extends to the top of the electrode 2 from the bottom of the electrode 2, as shown in Figure 9.
From the foregoing, it is described opening 21 can penetrating electrode 2 be connected to epitaxial structure 1, can also be not through electrode 2.Opening
21 penetrating electrode 2, the structure setting are by a relatively simple in technique.Opening is 21 not through electrode 2, that is, be open 21 bottoms and outer
Prolong structure 1 and is not likely to produce cavity so that welding compound comes into full contact with after entering opening 21 with 21 inner walls of opening with distance, improves
The stability of welding.
As shown in Figure 10, the embodiment of the present invention one are as follows:
A kind of LED chip structure of the electrode with opening, the electrode 2 including epitaxial structure 1 and on the epitaxial structure 1,
The electrode 2 includes the bottom and top being oppositely arranged, and the side wall of the connection bottom and top.The top of the electrode 2
Portion is arranged close to the epitaxial structure 1, and the bottom of the electrode 2 is arranged far from the epitaxial structure 1.
The electrode 2 is equipped with the opening 21 that more than two bottoms from the electrode extend to the top of the electrode,
The opening 21 is rounded poroid, and the opening 21 and the side wall distance of the electrode 2 are arranged, more than two openings 21
Uniformly and it is spaced apart.
In a preferred embodiment, the aperture of above-mentioned opening from the bottom of the electrode to the top-direction of the electrode by
It is tapered small.
As shown in figure 11, the embodiment of the present invention two are as follows:
A kind of LED chip structure of the electrode with opening, the electrode 2 including epitaxial structure 1 and on the epitaxial structure 1,
The electrode 2 includes the bottom and top being oppositely arranged, and the side wall of the connection bottom and top.The top of the electrode 2
Portion is arranged close to the epitaxial structure 1, and the bottom of the electrode 2 is arranged far from the epitaxial structure 1.
The electrode 2 is equipped with the opening that more than two bottoms from the electrode 2 extend to the top of the electrode 2
21, more than two openings 21 are uniform and are spaced apart, 21 trapezoidal channel-shaped of the opening, described in 21 connection of opening
The opposite two side walls of electrode 2, wherein cross-sectional area of the opening 21 close to 2 top of electrode is less than the opening 21
Cross-sectional area close to 2 bottom of electrode.
The embodiment of the present invention three are as follows:
A kind of electrode has the LED chip structure of opening, and the electrode including epitaxial structure and on the epitaxial structure is described
Electrode includes the bottom and top being oppositely arranged, and the side wall of the connection bottom and top.The top of the electrode is close
The epitaxial structure setting, the bottom of the electrode is arranged far from the epitaxial structure.
The electrode is equipped with the opening that more than two bottoms from the electrode extend to the top of the electrode, described
Opening has coarse side wall, and the bottom of the opening and the epitaxial structure have distance.
The present embodiment can also be applied to above-described embodiment one and embodiment two.
In an alternative embodiment, described be open is extended to the top of the electrode by the bottom of the electrode, and described
Epitaxial structure connection.
The embodiment of the present invention four are as follows:
A kind of electrode corresponding to above-described embodiment has the preparation method for the LED chip structure being open, comprising:
Electrode 2 is made by modes such as etchings on epitaxial structure 1；
Photoresist layer 3 is coated in the bottom of the electrode 2；
Mutually independent etching area and non-etched areas are marked off on the photoresist layer 3；
The photoresist layer 3 of the etching area is removed to expose the electrode 2, shown in obtained structure such as Figure 12 (a)；
Then the part exposed after removal photoresist layer to the electrode 2 is etched, and is formed separate from the electrode 2
The opening 21 that one end of the epitaxial structure 1 extends to the electrode 2 close to one end of the epitaxial structure 1, obtained structure
As shown in Figure 12 (b).
The specific setting of the opening can refer to the various embodiments described above, and details are not described herein again.
The embodiment of the present invention five are as follows:
A kind of electrode corresponding to above-described embodiment has the preparation method for the LED chip structure being open, comprising:
Photoresist layer 3 is coated on epitaxial structure 1；
Mutually independent etching area and non-etched areas are marked off on the photoresist layer；
The photoresist layer 3 for removing the etching area exposes the epitaxial structure 1；
In side of the photoresist layer 3 far from the epitaxial structure 1 and the extension exposed after removing photoresist layer
Body structure surface coats one layer of electrode 2, shown in obtained structure such as Figure 13 (a)；
Electrode 2 of the photoresist layer 3 far from 1 side of epitaxial structure, obtained structure such as Figure 13 (b) are removed using gold process is torn
It is shown, and the remaining photoresist layer 3 of removal, one end from the electrode 2 far from the epitaxial structure 1 is obtained to the electrode
2 openings 21 extended close to one end of the epitaxial structure 1, as shown in Figure 13 (c).
The specific setting of the opening can refer to the various embodiments described above, and details are not described herein again.
In above-mentioned preparation method, first passes through photoresist layer and limits electrode zone and open area, be coated with electrode,
In, partial electrode can be directly coated on epitaxial structure, and partial electrode is then coated on photoresist layer, therefore by tearing gold
Degumming process removes extra electrode (electrode layer i.e. on photoresist layer) and the electrode with opening can be obtained in photoresist.
In conclusion the LED chip structure with opening provided by the invention, it is extra to be adsorbed by opening set by electrode
Welding compound, the problems such as chip is not in inclination, offset in welding, it is excellent to have that light-emitting surface is smooth, light emission direction is consistent etc.
Point is applied and can reach wider viewing angle on light-emitting diode display, will not generate polarisation phenomenon, and can be improved display
Colour mixture uniformity.
It should be noted that all the embodiments in this specification are described in a progressive manner, each embodiment weight
Point explanation is the difference from other embodiments, and the same or similar parts between the embodiments can be referred to each other.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (10)
1. the LED chip structure that a kind of electrode has opening, which is characterized in that including epitaxial structure and be set to the epitaxial structure
On electrode, the top of the electrode is arranged close to the epitaxial structure, and the bottom of the electrode is set far from the epitaxial structure
It sets, the electrode is equipped at least one opening extended from the bottom of the electrode to the top of the electrode.
2. electrode according to claim 1 have opening LED chip structure, which is characterized in that it is described opening with it is described
The side wall of electrode has distance.
3. the LED chip structure that electrode according to claim 2 has opening, which is characterized in that the opening is along parallel
Section figure in the electrode base direction includes at least one of round and polygon.
4. the LED chip structure that electrode according to claim 1 has opening, which is characterized in that the open communication institute
State the opposite side wall of electrode.
5. the LED chip structure that electrode according to claim 4 has opening, which is characterized in that the opening is along vertical
Section figure in the electrode base direction includes at least one of trapezoidal, triangle, semicircle and ellipse.
6. electrode according to claim 1 have opening LED chip structure, which is characterized in that the opening it is transversal
Area is gradually reduced from the bottom of the electrode to the top-direction of the electrode.
7. the LED chip structure that electrode according to claim 1 has opening, which is characterized in that the quantity of the opening
For two or more, more than two openings are uniform and are spaced apart.
8. the LED chip structure that electrode according to claim 1 has opening, which is characterized in that the opening has thick
Rough side wall.
9. the LED chip structure that electrode according to claim 1 has opening, which is characterized in that described to be open far from institute
The top of one end and the electrode for stating the bottom of electrode has distance.
10. the LED chip structure that electrode according to claim 1 has opening, which is characterized in that the opening is described in
The bottom of electrode extends to the top of the electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910307212.7A CN109980059A (en) | 2019-04-17 | 2019-04-17 | A kind of electrode has the LED chip structure of opening |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910307212.7A CN109980059A (en) | 2019-04-17 | 2019-04-17 | A kind of electrode has the LED chip structure of opening |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109980059A true CN109980059A (en) | 2019-07-05 |
Family
ID=67085051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910307212.7A Pending CN109980059A (en) | 2019-04-17 | 2019-04-17 | A kind of electrode has the LED chip structure of opening |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109980059A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112909153A (en) * | 2019-12-03 | 2021-06-04 | 深圳市聚飞光电股份有限公司 | Flip LED chip, circuit board and electronic equipment |
| WO2021134488A1 (en) * | 2019-12-31 | 2021-07-08 | 重庆康佳光电技术研究院有限公司 | Light-emitting diode chip, display panel, and electronic device |
| CN113745384A (en) * | 2020-05-29 | 2021-12-03 | 成都辰显光电有限公司 | Semiconductor device, LED chip and transfer method thereof |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001015556A (en) * | 1999-07-02 | 2001-01-19 | Casio Comput Co Ltd | Semiconductor device, its manufacture, and its mounting structure |
| JP2003174195A (en) * | 2001-12-07 | 2003-06-20 | Abel Systems Inc | Light emitting diode |
| JP2007123409A (en) * | 2005-10-26 | 2007-05-17 | Citizen Electronics Co Ltd | Light emitting diode chip |
| US20120056232A1 (en) * | 2010-09-06 | 2012-03-08 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method for manufacturing same |
| CN102915982A (en) * | 2012-11-08 | 2013-02-06 | 南通富士通微电子股份有限公司 | Semiconductor device |
| CN205141015U (en) * | 2015-11-13 | 2016-04-06 | 广州市鸿利光电股份有限公司 | LED inverts support |
| US20170098738A1 (en) * | 2014-07-01 | 2017-04-06 | Xiamen Sanan Optoelectronics Technology Co., Ltd. | Light Emitting Diode |
| US20170133567A1 (en) * | 2015-07-30 | 2017-05-11 | Citizen Electronics Co., Ltd. | Semiconductor device and light-emitting apparatus |
| CN209471993U (en) * | 2019-04-17 | 2019-10-08 | 厦门乾照半导体科技有限公司 | A kind of electrode has the LED chip structure of opening |
-
2019
- 2019-04-17 CN CN201910307212.7A patent/CN109980059A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001015556A (en) * | 1999-07-02 | 2001-01-19 | Casio Comput Co Ltd | Semiconductor device, its manufacture, and its mounting structure |
| JP2003174195A (en) * | 2001-12-07 | 2003-06-20 | Abel Systems Inc | Light emitting diode |
| JP2007123409A (en) * | 2005-10-26 | 2007-05-17 | Citizen Electronics Co Ltd | Light emitting diode chip |
| US20120056232A1 (en) * | 2010-09-06 | 2012-03-08 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method for manufacturing same |
| CN102915982A (en) * | 2012-11-08 | 2013-02-06 | 南通富士通微电子股份有限公司 | Semiconductor device |
| US20170098738A1 (en) * | 2014-07-01 | 2017-04-06 | Xiamen Sanan Optoelectronics Technology Co., Ltd. | Light Emitting Diode |
| US20170133567A1 (en) * | 2015-07-30 | 2017-05-11 | Citizen Electronics Co., Ltd. | Semiconductor device and light-emitting apparatus |
| CN205141015U (en) * | 2015-11-13 | 2016-04-06 | 广州市鸿利光电股份有限公司 | LED inverts support |
| CN209471993U (en) * | 2019-04-17 | 2019-10-08 | 厦门乾照半导体科技有限公司 | A kind of electrode has the LED chip structure of opening |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112909153A (en) * | 2019-12-03 | 2021-06-04 | 深圳市聚飞光电股份有限公司 | Flip LED chip, circuit board and electronic equipment |
| WO2021134488A1 (en) * | 2019-12-31 | 2021-07-08 | 重庆康佳光电技术研究院有限公司 | Light-emitting diode chip, display panel, and electronic device |
| CN113745384A (en) * | 2020-05-29 | 2021-12-03 | 成都辰显光电有限公司 | Semiconductor device, LED chip and transfer method thereof |
| CN113745384B (en) * | 2020-05-29 | 2023-09-22 | 成都辰显光电有限公司 | Semiconductor device, LED chip and transfer method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109980059A (en) | A kind of electrode has the LED chip structure of opening | |
| TWI682436B (en) | Massive transferring method of micro leds and light-emitting panel module using the method | |
| CN104362236B (en) | A kind of LED structure and preparation method thereof | |
| CN104409605B (en) | A kind of high-voltage chip LED structure and preparation method thereof | |
| CN209471993U (en) | A kind of electrode has the LED chip structure of opening | |
| CN104518056A (en) | Preparation method of reverse polarity AlGaInP red light LED (Light-Emitting Diode) chip | |
| CN110634906A (en) | Light-emitting diode display | |
| TWI692887B (en) | Micro-LED chip, display screen and preparation method | |
| CN102185069B (en) | Patterned substrate with multiple annulus structure distribution as well as manufacturing method and application thereof | |
| CN111341897A (en) | LED packaging structure, manufacturing method thereof and LED flash lamp | |
| CN103199165A (en) | Light-emitting diode substrate, processing method thereof and light-emitting diode | |
| JP5335248B2 (en) | Method for adjusting chromaticity of light emitting device | |
| CN103050596A (en) | Light emitting diode provided with patterned substrate | |
| CN204243081U (en) | A kind of high-voltage chip LED structure | |
| CN104419890A (en) | Mask assembly | |
| EP2416359A2 (en) | Warm white light led lamp with high luminance and high color rendering index | |
| CN103378248B (en) | Patterned substrate and light emitting diode structure | |
| CN104362235A (en) | Patterned substrate and manufacturing method thereof | |
| TW201306310A (en) | LED structure and method for manufacturing thereof | |
| CN111341898A (en) | LED packaging structure, manufacturing method thereof and LED flash lamp | |
| CN105322068A (en) | Light emitting diode chip and manufacturing method therefor | |
| CN205789976U (en) | A kind of LED chip | |
| CN204303811U (en) | A kind of LED structure | |
| CN102263174B (en) | Semiconductor light emitting element | |
| CN102255024B (en) | Micronanometer structure for improving quality of GaN epitaxial material and application thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |