CN109979974A - A kind of AMOLED transparence display dot structure - Google Patents
A kind of AMOLED transparence display dot structure Download PDFInfo
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- CN109979974A CN109979974A CN201910193240.0A CN201910193240A CN109979974A CN 109979974 A CN109979974 A CN 109979974A CN 201910193240 A CN201910193240 A CN 201910193240A CN 109979974 A CN109979974 A CN 109979974A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
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Abstract
A kind of AMOLED transparence display dot structure, belongs to field of display technology.The transparence display dot structure, including multiple pixels, each pixel includes the sub-pixel of three different colours, transparent region is arranged in the luminous zone of each sub-pixel, it is characterized in that, the transparent region in the dot structure in adjacent subpixels is located at the different location (top position, middle position or bottom position) of sub-pixel.A kind of AMOLED transparence display dot structure provided by the invention efficiently solves the problems, such as display band by the way that transparent region to be set at the different location in sub-pixel while guaranteeing light transmittance.
Description
Technical field
The present invention relates to field of display technology, and in particular to a kind of AMOLED transparence display dot structure.
Background technique
Transparence display refers to the display that can form transparence display state so that observer sees the image at screen rear, is
A kind of completely new display technology, can be applied in the display devices such as mobile phone, laptop, display case, billboard.Active square
Battle array Organic Light Emitting Diode (AMOLED) have self-luminous, high-luminous-efficiency, low operating voltage, plate thickness is thin, can be fabricated to
The advantages that flexible panel and simple manufacturing process, is often used to production transparent display.Principle of the AMOLED from main light emission are as follows:
Indium tin oxide semiconductor (ITO) electrode and metal electrode made on backboard will have respectively as the anode and cathode of device
On machine semiconductor material and luminescent material vapor deposition to substrate, under certain voltage driving, electrons and holes are respectively from cathode and sun
Pole is injected into electron and hole transport layer, and migrates through electron and hole transport layer to luminescent layer, meets in luminescent layer, is formed
Exciton simultaneously excites light emitting molecule, and visible light is issued by radiative relaxation.
As shown in Figure 1, being common AMOLED transparence display dot structure (b), wherein (a) is one of pixel
Structure, including three sub-pixels of red, green, blue (RGB), each sub-pixel include driving thin film transistor (TFT) 1 (TFT) and luminous zone 2,
Its light transmittance is generally 10%.In order to improve light transmittance, usually increase transparent region 3 in luminous zone, nothing shines in transparent region 3
The light transmittance of dot structure can be promoted to 50% or more by material, only substrate and transparent electrode.However, the transparence display picture
In plain structure, single sub-pixel transparent region is respectively positioned on sub-pixel top position, forms a lateral oolemma (region 3), with
Opaque cross band (region 2) compares, it may appear that bright dark different problem up and down, and then lead to the risk for showing band；And
Human eye is more sensitive under low ash rank, is easier to discovery band.
Summary of the invention
It is an object of the invention to propose a kind of AMOLED transparence display pixel knot for defect existing for background technique
Structure solves the problems, such as to show band in background technique.
To achieve the above object, The technical solution adopted by the invention is as follows:
A kind of AMOLED transparence display dot structure, including multiple pixels, each pixel include the son of three different colours
Transparent region is arranged in the luminous zone of pixel, each sub-pixel, which is characterized in that saturating in adjacent subpixels in the dot structure
Area pellucida domain is located at the different location (top position, middle position or bottom position) of sub-pixel.
Further, in the dot structure, the transparent region in each pixel forms " V " shape, inverted " v " or stairstepping
Deng.
Further, each pixel includes three red sub-pixel, green sub-pixels and blue subpixels sub-pixels；
Successively alternating cyclical arranges to obtain dot structure three sub-pixels.
Further, the width of the transparent region can be of same size with luminous zone, can also be with the width of luminous zone
Degree is different.
Further, the area of the transparent region is the 10%~30% of sub-pixel area.
Further, the transparent region can be rectangle, circle etc..
Further, each sub-pixel includes driving thin film transistor (TFT) (TFT), luminous zone and transparent region；The driving
Thin film transistor (TFT) includes the polysilicon layer set gradually, metal gate layers, source metal drain electrode layer, insulating layer etc.；The luminous zone
Including set gradually semitransparent anode, red/green luminous material layer, metallic cathode；The transparent region includes half
Transparent anode, flatness layer and metallic cathode, without luminous material layer.
Compared with prior art, the invention has the benefit that
A kind of AMOLED transparence display dot structure provided by the invention, by the way that transparent region to be set in sub-pixel
At different location, display band is efficiently solved the problems, such as while guaranteeing light transmittance.
Detailed description of the invention
Fig. 1 is the transparence display dot structure (b) of background technique and the structural schematic diagram of one of pixel (a)；
Wherein, 1 is driving thin film transistor (TFT), and 2 be luminous zone, and 3 be transparent region；
Fig. 2 is the sectional view of luminous zone and transparent region in transparence display dot structure；Wherein, 4 be semitransparent anode, 5
It is metallic cathode for flatness layer, 6,7 be red/green luminous material layer；
Fig. 3 is the structural schematic diagram of the luminous material layer in luminous zone in transparence display dot structure；
Fig. 4 is the set-up mode schematic diagram of transparent region in transparence display dot structure of the present invention；
Fig. 5 is a kind of schematic diagram for AMOLED transparence display dot structure that embodiment 1 provides；
Fig. 6 is a kind of schematic diagram for AMOLED transparence display dot structure that embodiment 2 provides；
Fig. 7 is a kind of schematic diagram for AMOLED transparence display dot structure that embodiment 3 provides.
Specific embodiment
With reference to the accompanying drawings and examples, technical solution of the present invention is described in detail.
As shown in Fig. 2, in transparence display dot structure, the sectional view of luminous zone and transparent region；Wherein, luminous zone is wrapped
The semitransparent anode set gradually, red/green luminous material layer, metallic cathode are included, and transparent region includes translucent
Anode, flatness layer and metallic cathode, without luminous material layer.
As shown in figure 3, in transparence display dot structure, the structural schematic diagram of the luminous material layer in luminous zone；Including
Hole injection layer HIL (Hole Injection Layer), hole transmission layer HTL (the Hole Transport set gradually
Layer), electronic barrier layer EBL (Electron Blocking Layer), luminescent layer EML (Emission Layer), electronics
Transport layer ETL (Electron Transport Layer), electron injecting layer EIL (Electron Injection Layer) etc.
Multi-layer film structure.The luminous material layer is formed by the methods of vapor deposition, transfer or ink-jet.
As shown in figure 4, in transparence display dot structure of the present invention, the set-up mode schematic diagram of transparent region；It is described
The width in area pellucida domain can be with (left figure) of same size of luminous zone, can also be of different size with luminous zone, is embedded in luminous
In area (right figure), the area of the transparent region is the 10%~30% of sub-pixel area.
Embodiment 1
As shown in figure 5, a kind of schematic diagram of the AMOLED transparence display dot structure provided for embodiment 1, (a) is wherein
The structure of one pixel.The AMOLED transparence display dot structure that embodiment 1 provides includes 4 pixels, and each pixel includes red
Transparent region is arranged in the luminous zone of three sub-pixels, green sub-pixels and blue subpixels sub-pixels, each sub-pixel,
In, the transparent region in adjacent subpixels is located at top position and the middle position of sub-pixel.
Driving thin film transistor (TFT) (TFT) therein is located at the bottom section (such as Fig. 5 a) of sub-pixel, including polysilicon layer, gold
Belong to grid layer, source metal drain electrode layer, insulating layer etc., is formed using conventional method.Transparent region therein is located at the top of sub-pixel
Portion position and middle position, including semitransparent anode, flatness layer and metallic cathode, flat layer material are common photoresist, thoroughly
Lightness need to be greater than 90%, and semitransparent anode usually selects ITO or ITO/Ag/ITO material (indium oxide tin silver/indium oxide
Tin), transmitance is greater than 50%；The area of transparent region is the 10%~30% of the sub-pixel gross area, the specific transmission for regarding product
Rate specification determines；Transparent region is not limited solely to rectangle, can also be embedded in luminous zone, as shown in Figure 4.Hair therein
Light area 2 includes semitransparent anode, red/green luminous material layer, metallic cathode, by that will deposit the sun after flatness layer
Semitransparent anode is exposed after being exposed development in pole, then forms luminous organic material on anode and obtain, and semitransparent anode is usual
It selects ITO, ITO/Ag/ITO material (indium oxide tin silver/tin indium oxide), organic light emitting material passes through vapor deposition, transfer or spray
The methods of ink is filled, and is multi-layer film structure, including hole injection layer HIL (the Hole Injection set gradually
Layer), hole transmission layer HTL (Hole Transport Layer), electronic barrier layer EBL (Electron Blocking
Layer), luminescent layer EML (Emission Layer), electron transfer layer ETL (Electron Transport Layer), electronics
The multi-layer film structures such as implanted layer EIL (Electron Injection Layer), as shown in figure 3, luminous material layer directly contacts
Anode layer and cathode layer, cathode layer are usually ITO, and transmitance is greater than 90%, are conducive to the transmission of light, and thickness is according to actually answering
With selection, usually 0.1~0.2 μm.
Embodiment 2
As shown in fig. 6, a kind of schematic diagram of the AMOLED transparence display dot structure provided for embodiment 2, (a) is wherein
The structure of one pixel.The AMOLED transparence display dot structure that embodiment 2 provides includes 4 pixels, and each pixel includes red
Transparent region is arranged in the luminous zone of three sub-pixels, green sub-pixels and blue subpixels sub-pixels, each sub-pixel,
In, the transparent region in adjacent subpixels is located at the top position and bottom position of sub-pixel.
Embodiment 3
As shown in fig. 7, a kind of schematic diagram of the AMOLED transparence display dot structure provided for embodiment 3, (a) is wherein
The structure of one pixel.The AMOLED transparence display dot structure that embodiment 3 provides includes 4 pixels, and each pixel includes red
Transparent region is arranged in the luminous zone of three sub-pixels, green sub-pixels and blue subpixels sub-pixels, each sub-pixel,
In, the stepped distribution of transparent region in each pixel, i.e. transparent region be successively located at top position, middle position and
Bottom position.
The above is only the embodiment of the present invention is described, rather than exhaustion or limit the scope of the invention, this field
The adjustment and modification that technical staff is readily apparent that according to specification disclosure, it is within the scope of the present invention.
Claims (6)
1. a kind of AMOLED transparence display dot structure, including multiple pixels, each pixel includes the sub- picture of three different colours
Transparent region is arranged in the luminous zone of element, each sub-pixel, which is characterized in that transparent in adjacent subpixels in the dot structure
Region is located at the different location of sub-pixel.
2. AMOLED transparence display dot structure according to claim 1, which is characterized in that in the dot structure, often
Transparent region in a pixel forms " V " shape, inverted " v " or stairstepping.
3. AMOLED transparence display dot structure according to claim 1, which is characterized in that each pixel includes red
Three sub-pixels, green sub-pixels and blue subpixels sub-pixels.
4. AMOLED transparence display dot structure according to claim 1, which is characterized in that the area of the transparent region
It is the 10%~30% of sub-pixel area.
5. AMOLED transparence display dot structure according to claim 1, which is characterized in that the transparent region is rectangle
Or it is round.
6. AMOLED transparence display dot structure according to claim 1, which is characterized in that the luminous zone includes successively
The semitransparent anode of setting, red/green luminous material layer, metallic cathode；The transparent region includes translucent sun
Pole, flatness layer and metallic cathode.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910193240.0A CN109979974A (en) | 2019-03-14 | 2019-03-14 | A kind of AMOLED transparence display dot structure |
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| CN201910193240.0A CN109979974A (en) | 2019-03-14 | 2019-03-14 | A kind of AMOLED transparence display dot structure |
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| CN108630730A (en) * | 2017-03-24 | 2018-10-09 | 三星显示有限公司 | Transparent display panel |
| CN109037236A (en) * | 2018-05-10 | 2018-12-18 | 友达光电股份有限公司 | Transparent display panel and method for manufacturing same |
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| CN103488020A (en) * | 2013-08-09 | 2014-01-01 | 京东方科技集团股份有限公司 | Display panel, driving method of display panel and display device with display panel |
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Application publication date: 20190705 |