CN109957786A - A kind of vapor phase growing apparatus making HIT silion cell - Google Patents
A kind of vapor phase growing apparatus making HIT silion cell Download PDFInfo
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- CN109957786A CN109957786A CN201811369234.8A CN201811369234A CN109957786A CN 109957786 A CN109957786 A CN 109957786A CN 201811369234 A CN201811369234 A CN 201811369234A CN 109957786 A CN109957786 A CN 109957786A
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- silicon substrate
- vacuum chamber
- vapor phase
- silion cell
- growing apparatus
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- 239000012808 vapor phase Substances 0.000 title claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 42
- 239000010703 silicon Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 239000007789 gas Substances 0.000 claims description 40
- 230000005684 electric field Effects 0.000 claims description 9
- 238000010992 reflux Methods 0.000 claims description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 7
- 229910000077 silane Inorganic materials 0.000 claims description 6
- 238000005984 hydrogenation reaction Methods 0.000 claims description 4
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010277 boron hydride Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 8
- 239000007788 liquid Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 239000012528 membrane Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 206010054949 Metaplasia Diseases 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000015689 metaplastic ossification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000000518 rheometry Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention discloses a kind of vapor phase growing apparatus for making HIT silion cell, including plasma gas, the vacuum chamber equipped with entrance and exit, radio-frequency power supply, the inlet for being set to vacuum chamber and the gas box for being connected to atmosphere zone and vacuum room area, the electrode assembly, diversion trench, vacuum pump and the silicon substrate that are interlocked and be arranged side by side by several positive and negative electrodes, plasma gas enters gas box by the entrance of vacuum chamber, and gas box is equipped with several through-holes towards the indoor end face of vacuum；Electrode assembly is set to the lower section of gas box, and radio-frequency power supply radio-frequency electrode is electrically connected its positive electrode, and radio-frequency power supply ground electrode is electrically connected its negative electrode；Silicon substrate is set to the lower section of electrode assembly, is erected in above diversion trench；Diversion trench is set to the exit of vacuum chamber, and even in vacuum pump and vacuum chamber.The HIT silion cell of device production through the invention walks dry technique completely, is not related to the processing of chemical liquids, clean hygiene, and be entirely full-automatic production, reduces manpower and material resources, economization process.
Description
Technical field
The present invention relates to silion cell field, in particular to a kind of vapor phase growing apparatus for making HIT silion cell.
Background technique
HIT structure solar battery is a kind of electric using mixed type solar made of crystalline silicon substrates and amorphous silicon membrane
Pond, HIT structure (Heterojunction with intrinsic Thinlayer) is exactly in p-type amorphous silicon hydride and N-shaped hydrogen
Change and increase by one layer of undoped (intrinsic) hydrogenation non crystal silicon film between amorphous silicon and n-type silicon substrate).The conversion of HIT solar battery
Rate height is a kind of low high-efficiency battery, has the advantage being mutually equal to traditional silicon wafer solar battery.But HIT is made at present
The technique of structure solar battery is too complicated, and equipment is again expensive, strongly limits its commercial application value.
Summary of the invention
The main object of the present invention is to propose a kind of vapor phase growing apparatus for making HIT silion cell, it is intended to overcome above ask
Topic.
To achieve the above object, a kind of vapor phase growing apparatus making HIT silion cell proposed by the present invention, including plasma
Gas, radio-frequency power supply, vacuum pump, the vacuum chamber equipped with entrance and exit and it is contained in the indoor gas box of vacuum, by several positive and negative
Electrode assembly, diversion trench, the silicon substrate that electrode interlocks and is arranged side by side, gas box are connected to the entrance of vacuum chamber, and plasma gas is logical
The entrance for crossing vacuum chamber enters gas box, and gas box is equipped with several through-holes towards the indoor end face of vacuum；Electrode assembly is set to gas box
Lower section, positive electrode connect radio-frequency power supply radio-frequency electrode, and negative electrode connects radio-frequency power supply ground electrode；Silicon substrate is set to electrode group
The lower section of part, heavily fortified point are stood on above diversion trench；Diversion trench is set to the exit of vacuum chamber, and is connected in vacuum pump and vacuum chamber.
Preferably, the vacuum chamber is additionally provided with gate, and the gate is set to the same transverse axis position of silicon substrate.
Preferably, the positive and negative electrode of the electrode assembly is made of the conductive metal of laminated structure.
Preferably, the two sides above the diversion trench are respectively equipped with several idler wheels, and the silicon substrate is removable by idler wheel
It is set to above diversion trench dynamicly.
Preferably, the diversion trench includes interconnected diversion chamber and drainage cylinder, and the drainage cylinder is fixed on diversion chamber
Bottom, stretch out vacuum chamber outlet connection vacuum pump；The diversion chamber includes grid lid and reflux space, and the grid lid is solid
Above diversion chamber, reflux space is thus formed below diversion chamber, the reflux space is connected with drainage cylinder.
Preferably, the silicon substrate is to use NF3After plasma progress surface passivating treatment uses hydrogen ion to bombard again
Silicon substrate.
Preferably, spacing≤15cm between the through-hole.
Preferably, the radio-frequency power supply is RF power supply, and the RF power supply applies high frequency between gas box and ionization grid and hands over
Rheology electromagnetic wave forms alternating electric field.
Preferably, further include that screen closes piece, if silicon substrate needs coating single side, screen is closed into the non-plated film that piece covers silicon substrate
Face.
Preferably, the plasma gas is the silane for being mixed with suitable hydrogenation phosphorus or boron hydride, and the silane is being worn
It is ionized the amorphous silicon film for being decomposed into N-type or p-type when crossing the electric field of radio-frequency power supply application, is deposited on silicon substrate surface.
The HIT silion cell of device production through the invention walks dry technique completely, is not related to the processing of chemical liquids, completely defends
It is raw, and be entirely full-automatic production, reduce manpower and material resources, economization process.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
The structure shown according to these attached drawings obtains other attached drawings.
Fig. 1 is the structural schematic diagram of one embodiment of the invention；
The embodiments will be further described with reference to the accompanying drawings for the realization, the function and the advantages of the object of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiment is only a part of the embodiments of the present invention, instead of all the embodiments.Base
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts it is all its
His embodiment, shall fall within the protection scope of the present invention.
It is to be appreciated that if relating to directionality instruction (such as up, down, left, right, before and after ...) in the embodiment of the present invention,
Then directionality instruction be only used for explain under a certain particular pose (as shown in the picture) between each component relative positional relationship,
Motion conditions etc., if the particular pose changes, directionality instruction is also correspondingly changed correspondingly.
In addition, being somebody's turn to do " first ", " second " etc. if relating to the description of " first ", " second " etc. in the embodiment of the present invention
Description be used for description purposes only, be not understood to indicate or imply its relative importance or implicitly indicate indicated skill
The quantity of art feature." first " is defined as a result, the feature of " second " can explicitly or implicitly include at least one spy
Sign.It in addition, the technical solution between each embodiment can be combined with each other, but must be with those of ordinary skill in the art's energy
It is enough realize based on, will be understood that the knot of this technical solution when conflicting or cannot achieve when occurs in the combination of technical solution
Conjunction is not present, also not the present invention claims protection scope within.
As shown in Figure 1, a kind of vapor phase growing apparatus for making HIT silion cell proposed by the present invention, including plasma gas
1, radio-frequency power supply 3, vacuum pump 7, the vacuum chamber 2 equipped with entrance and exit and the gas box 4 being contained in vacuum chamber 2, by it is several just,
Electrode assembly 5, diversion trench 6, the silicon substrate 8 that negative electrode interlocks and is arranged side by side, gas box 4 are connected to the entrance of vacuum chamber 2, plasma
Gas 1 enters gas box 4 by the entrance of vacuum chamber 2, and gas box 4 is equipped with several through-holes 41 towards the end face in vacuum chamber 2；Electrode group
Part 5 is set to the lower section of gas box 4, and positive electrode connects 3 radio-frequency electrode of radio-frequency power supply, and negative electrode connects 3 ground electrode of radio-frequency power supply；
Silicon substrate 8 is set to the lower section of electrode assembly 5, and heavily fortified point stands on 6 top of diversion trench；Diversion trench 6 is set to the exit of vacuum chamber 2, and even
In logical vacuum pump 7 and vacuum chamber 2.
In embodiments of the present invention, plasma gas 1 of the invention is entered in vacuum chamber 2 by one end of gas box 4, due to
The outlet of vacuum chamber 2 is connected with vacuum pump 7, opens vacuum pump 7 and is evacuated, and extracts the through-hole 41 that plasma gas 1 passes through gas box 4,
Plasma gas is injected into plasma gas molecules, the positive electrode of the radio-frequency electrode connection electrode component 4 of radio-frequency power supply 3 is penetrated
The negative electrode of the ground electrode connection electrode component 4 of frequency power 3, energization form ionized region, and it is past that plasma gas molecules pass through electric field
As pumping direction drift is to silicon substrate 8 after multiplex vibration ionization decomposition, or it is adhered to 8 surface of silicon substrate, or by after diversion trench 6
It is extracted out by vacuum pump 7, the plasma gas after decomposition is adhered to 8 surface of silicon substrate and deposits to form noncrystal membrane.Through the invention
Device production HIT silion cell walk dry technique completely, be not related to the processing of chemical liquids, clean hygiene, and be entirely it is complete from
Dynamic metaplasia produces, and reduces manpower and material resources, economization process.
Preferably, the vacuum chamber 2 is additionally provided with gate 21, and the gate 21 is set to the same transverse axis position of silicon substrate
It sets.
In embodiments of the present invention, gate 21 is arranged by vacuum chamber 2, that is, facilitates the replacement of silicon substrate 8, is also convenient for tieing up
It repairs, cleans.
Preferably, the positive and negative electrode of the electrode assembly 4 is made of the conductive metal of laminated structure.
In embodiments of the present invention, positive and negative electrode uses the conductive metal of laminated structure to add the intensity of strong electric field ionization.
Preferably, the diversion trench 6 is respectively equipped with several idler wheels 61, institute in the two sides with the same transverse axis of silicon substrate 8
It states silicon substrate 8 and 6 top of diversion trench is movably disposed in by idler wheel 61.
In embodiments of the present invention, idler wheel 61 is set on diversion trench 6 of the invention, and silicon substrate 8 is removable by idler wheel 61
Ground is set to 6 top of diversion trench, so that silicon substrate 8 passes in and out gate.
Preferably, the diversion trench 6 includes that diversion chamber is fixed in interconnected diversion chamber and drainage cylinder, the drainage cylinder
Bottom, stretch out vacuum chamber outlet connection vacuum pump；The diversion chamber includes grid lid and reflux space, and the grid lid is solid
Above diversion chamber, reflux space is thus formed below diversion chamber, the reflux space is connected with drainage cylinder.
In embodiments of the present invention, further, prevent the imperfect flow of air-flow from causing the inhomogeneities of noncrystal membrane,
Therefore the fixed-grid lid above diversion chamber, plasma gas are uniformly extracted.
Preferably, the silicon substrate 8 is to use NF3After plasma progress surface passivating treatment uses hydrogen ion to bombard again
Silicon substrate.
In embodiments of the present invention, silicon substrate 8 uses NF3Plasma carries out surface passivating treatment and uses hydrogen ion to bombard again
Carry out the deposition of intrinsic silicon thin film afterwards.
Preferably, spacing≤15cm between the through-hole 41.
In embodiments of the present invention, by the setting of the small spacing of through-hole 41, plasma gas 1 is subdivided into plasma gas
Molecule spray is set to the aura area between gas box 4 and electrode assembly 5, and space point is carried out under the ionization of 3 alternating electric field of radio-frequency power supply
Solution.
Preferably, the radio-frequency power supply 3 is RF power supply, and the RF power supply applies high frequency between gas box 4 and electrode assembly 5
Exchange variation electromagnetic wave, forms alternating electric field.
Preferably, further include that screen closes piece, if silicon substrate needs coating single side, screen is closed into the non-plated film that piece covers silicon substrate
Face.
Preferably, the plasma gas 1 is the silane for being mixed with suitable hydrogenation phosphorus or boron hydride, and the silane is being worn
It is ionized the amorphous silicon film for being decomposed into N-type or p-type when crossing the electric field of radio-frequency power supply application, is deposited on 8 surface of silicon substrate.
In embodiments of the present invention, the present invention is by inputting different plasma gas 1, to be formed not on silicon substrate surface
Same noncrystal membrane or Multi-layer amorphous film.
It is merely a preferred embodiment of the present invention, is not intended to limit the scope of the invention described in upper, it is all in this hair
Under bright inventive concept, using equivalent structure transformation made by description of the invention and accompanying drawing content, or directly/be used in indirectly
Other related technical areas are included in scope of patent protection of the invention.
Claims (10)
1. a kind of vapor phase growing apparatus for making HIT silion cell, which is characterized in that including plasma gas, radio-frequency power supply, vacuum
Pump, the vacuum chamber equipped with entrance and exit and be contained in the indoor gas box of vacuum, by several positive and negative electrodes staggeredly and be arranged side by side
Electrode assembly, diversion trench, silicon substrate, gas box is connected to the entrance of vacuum chamber, and plasma gas is entered by the entrance of vacuum chamber
Gas box, gas box are equipped with several through-holes towards the indoor end face of vacuum；Electrode assembly is set to the lower section of gas box, and positive electrode connection is penetrated
Frequency power radio-frequency electrode, negative electrode connect radio-frequency power supply ground electrode；Silicon substrate is set to the lower section of electrode assembly, is erected in water conservancy diversion
Above slot；Diversion trench is set to the exit of vacuum chamber, and is connected in vacuum pump and vacuum chamber.
2. the vapor phase growing apparatus of production HIT silion cell as described in claim 1, which is characterized in that the vacuum chamber is also set
There is gate, the gate is set to the same transverse axis position of silicon substrate.
3. the vapor phase growing apparatus of production HIT silion cell as described in claim 1, which is characterized in that the electrode assembly
Positive and negative electrode is made of the conductive metal of laminated structure.
4. the vapor phase growing apparatus of production HIT silion cell as described in claim 1, which is characterized in that above the diversion trench
Two sides be respectively equipped with several idler wheels, the silicon substrate is movably disposed in above diversion trench by idler wheel.
5. the vapor phase growing apparatus of production HIT silion cell as described in claim 1, which is characterized in that the diversion trench includes
Interconnected diversion chamber and drainage cylinder, the drainage cylinder are fixed on the bottom of diversion chamber, and the outlet connection for stretching out vacuum chamber is true
Sky pump；The diversion chamber includes grid lid and reflux space, and the grid lid is fixed on above diversion chamber, thus under diversion chamber
It is rectangular at reflux space, the reflux space is connected with drainage cylinder.
6. the vapor phase growing apparatus of production HIT silion cell as described in claim 1, which is characterized in that the silicon substrate is to use
NF3Plasma carries out the silicon substrate after surface passivating treatment uses hydrogen ion to bombard again.
7. the vapor phase growing apparatus of production HIT silion cell as claimed in claim 4, which is characterized in that between the through-hole
Spacing≤15cm.
8. the vapor phase growing apparatus of production HIT silion cell as described in claim 1, which is characterized in that the radio-frequency power supply is
RF power supply, the RF power supply apply high-frequency ac between gas box and ionization grid and change electromagnetic wave, form alternating electric field.
9. as described in claim 1 production HIT silion cell vapor phase growing apparatus, which is characterized in that further include screen close piece, if
Silicon substrate needs coating single side, then screen is closed the non-coated surface that piece covers silicon substrate.
10. the vapor phase growing apparatus of production HIT silion cell as described in claim 1, which is characterized in that the plasma gas
For the silane for being mixed with suitable hydrogenation phosphorus or boron hydride, the silane is ionized point when passing through the electric field that radio-frequency power supply applies
Solution is N-type or P-type non-crystalline silicon film, is deposited on silicon substrate surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201811369234.8A CN109957786A (en) | 2018-11-16 | 2018-11-16 | A kind of vapor phase growing apparatus making HIT silion cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811369234.8A CN109957786A (en) | 2018-11-16 | 2018-11-16 | A kind of vapor phase growing apparatus making HIT silion cell |
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| CN109957786A true CN109957786A (en) | 2019-07-02 |
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