CN109888089A - A method of preparing SOT-MRAM hearth electrode - Google Patents
A method of preparing SOT-MRAM hearth electrode Download PDFInfo
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- CN109888089A CN109888089A CN201910079796.7A CN201910079796A CN109888089A CN 109888089 A CN109888089 A CN 109888089A CN 201910079796 A CN201910079796 A CN 201910079796A CN 109888089 A CN109888089 A CN 109888089A
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- sot
- mram
- hearth electrode
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- electrode according
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- 238000000034 method Methods 0.000 title claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 32
- 230000008878 coupling Effects 0.000 claims abstract description 11
- 238000010168 coupling process Methods 0.000 claims abstract description 11
- 238000005859 coupling reaction Methods 0.000 claims abstract description 11
- 239000000696 magnetic material Substances 0.000 claims abstract description 11
- 239000003302 ferromagnetic material Substances 0.000 claims abstract description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 229910017052 cobalt Inorganic materials 0.000 claims description 6
- 239000010941 cobalt Substances 0.000 claims description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 238000005566 electron beam evaporation Methods 0.000 claims description 2
- 229910021389 graphene Inorganic materials 0.000 claims description 2
- 230000007773 growth pattern Effects 0.000 claims description 2
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 claims description 2
- WFGOJOJMWHVMAP-UHFFFAOYSA-N tungsten(iv) telluride Chemical compound [Te]=[W]=[Te] WFGOJOJMWHVMAP-UHFFFAOYSA-N 0.000 claims description 2
- 238000005240 physical vapour deposition Methods 0.000 claims 1
- 230000005291 magnetic effect Effects 0.000 abstract description 21
- 238000002360 preparation method Methods 0.000 abstract description 10
- 238000005516 engineering process Methods 0.000 abstract description 4
- 230000010354 integration Effects 0.000 abstract description 4
- 238000003860 storage Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 7
- 239000007772 electrode material Substances 0.000 description 6
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 5
- 230000006870 function Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Landscapes
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
Abstract
The present invention discloses a kind of method for preparing SOT-MRAM hearth electrode, and this method is to prepare the hearth electrode of SOT-MRAM by preparing multilayer film rather than growing homogenous material.The multilayer film, the selection of every layer of material are as follows: have one kind of the non-magnetic material of strong SO coupling, or one of non-magnetic material for having weak SO coupling or one of ferromagnetic material.The method of the present invention preparation process is simple, completely compatible with existing magnetic storage technology.On the one hand, by combining different materials the advantages of, the material of high-spin Hall conductivity can be prepared, to overcome the problems, such as that traditional SOT-MRAM hearth electrode resistivity is excessively high, the power consumption of SOT-MRAM is advantageously reduced and improves device integration；On the other hand, the interface between different materials can produce the spin current containing vertical direction component, to be expected to realize the field-free overturning of vertical magnetic tunnel-junction.
Description
Technical field
The present invention relates to a kind of methods for preparing SOT-MRAM hearth electrode, and especially one kind is by preparing multilayer film rather than life
Long homogenous material is come the method for preparing SOT-MRAM hearth electrode.Belong to non-volatile memory technologies field.
Background technique
The mode that magnetic tunnel-junction is overturn using spin(-)orbit square (Spin orbit torque, SOT), theoretically
Have the characteristics that high speed, low-power consumption, and under this mode, magnetic tunnel-junction can carry out erasable infinitely.Thus it is based on this
Magnetic random memory SOT-MRAM be expected to substitution STT-MRAM and become the following mainstream memory.
But the practical application of SOT-MRAM still has several bottlenecks.One bottleneck is for providing the hearth electrode material of SOT
The spin Hall conductivity of material has to be hoisted.Spin Hall conductivity is the product of material spin Hall angle and conductivity, wherein
Spin Hall angle is the efficiency that electric current is converted into spin current, and efficiency is higher, and electric current needed for overturning magnetic tunnel-junction is lower；And conductance
What rate then reflected is the electric conductivity of material, and conductivity is higher, and under certain applied voltage, the length that hearth electrode can be prepared is got over
It is long, so as to integrate more magnetic tunnel-junctions on it.Therefore, for hearth electrode material, high-spin Hall angle and height
Conductivity preferably gets both, and so as to obtain higher spin Hall conductivity, reduces the overturning power consumption of magnetic tunnel-junction and improves
Device integration.For many years, various countries researcher is dedicated to finding the hearth electrode material of high-spin Hall conductivity, but same
In a kind of material, high-spin Hall angle and high conductivity can not often get both.For example, metal tantalum and tungsten, only reach in resistivity
Higher spin Hall angle (respectively~-0.15 and~-0.3) is just showed when to~200 μ Ω cm；And it is exhausted for topology
Edge body, the spin Hall angle reported at present can be more than 1, but its resistivity is up to~1000 μ Ω cm.
Another bottleneck is the decisive overturning for needing additional in-plane magnetic field to realize vertical magnetic tunnel-junction, this demand is tight
The practical application of SOT-MRAM is hindered again.Various countries researcher proposes kinds of schemes to solve the problems, such as this for many years, such as
With the device, ferroelectric material or layer coupling etc. of wedge structure, but these technological means are difficult to and existing magnetic storage skill
Art is compatible.
Summary of the invention
It is high in the SOT-MRAM hearth electrode material spin Hall conductivity and same material mentioned for above-mentioned background
The problem of spin Hall angle and high conductivity can not often get both and externally-applied magnetic field needed to realize SOT decisive overturning.This hair
It is bright to provide a kind of method for preparing SOT-MRAM hearth electrode.This method preparation process is simple, complete with existing magnetic storage technology
It is compatible.On the one hand, by combining different materials the advantages of, the material of high-spin Hall conductivity can be prepared, to overcome tradition
The excessively high problem of SOT-MRAM hearth electrode resistivity advantageously reduces the power consumption of SOT-MRAM and improves device integration；It is another
Aspect, the interface between different materials can produce the spin current containing vertical direction component, to be expected to realize vertical magnetic channel
The field-free overturning of knot.
The present invention is a kind of method for preparing SOT-MRAM hearth electrode, by prepare multilayer film rather than grow homogenous material come
Prepare the hearth electrode of SOT-MRAM.
The multilayer film, the selection of every layer of material are as follows: tantalum, tungsten, platinum, topological insulator, MX2Etc. having strong spin-
One kind of the non-magnetic material of orbit coupling；Or copper, silver, gold, titanium, graphene etc. have the non-magnetic material of weak SO coupling
One of material；Or one of ferromagnetic materials such as cobalt, nickel, iron-nickel alloy.Wherein, MX2It is molecular formula shaped like MX2Have
The two-dimentional non-magnetic material of strong SO coupling, such as molybdenum disulfide, tungsten disulfide, telluride tungsten；
The number of plies of the multilayer film is no less than 2 layers.
The multi-layer film structure, each layer of thickness is between 0 to 40 nanometer, and the thickness of every layer of material is without protecting
It holds consistent.
The growth pattern of the multilayer film is magnetron sputtering, molecular beam epitaxy, atomic layer deposition, electron beam evaporation and object
One of reason/chemical vapor deposition.
The present invention provides a kind of methods for preparing SOT-MRAM hearth electrode, the advantage is that: this method preparation process letter
It is single, it is completely compatible with existing magnetic storage technology.On the one hand, by combining different materials the advantages of, can prepare high-spin Hall electricity
The material of conductance advantageously reduces the function of SOT-MRAM to overcome the problems, such as that traditional SOT-MRAM hearth electrode resistivity is excessively high
It consumes and improves device integration；On the other hand, the interface between different materials can produce the spin current containing vertical direction component,
To be expected to realize the field-free overturning of vertical magnetic tunnel-junction.
Detailed description of the invention
Fig. 1 is the SOT hearth electrode material using this method preparation.Number of plies N meets N not less than 2.
Fig. 2 is a kind of typical case of the method for the present invention.
1 hearth electrode prepared with method of the invention
M1~MX1 to x-th magnetic tunnel-junction (x >=1)
For each technical solution, specific embodiment is not limited to mode described in figure.
Specific embodiment
The present invention provides a kind of method for preparing SOT-MRAM hearth electrode.Referring to attached drawing, reality of the invention is further illustrated
Matter feature.Attached drawing is schematic diagram, the thickness of each functional layer or region that are directed to, and the parameters such as area and volume are not real
Border size.
Detailed exemplary embodiment is disclosed, specific CONSTRUCTED SPECIFICATION and function detail are only the specific realities of description
Apply the purpose of example, therefore, can by it is many it is selectable in the form of implement the present invention, i.e., a kind of SOT-MRAM hearth electrode for preparing
Method.And the present invention is not construed as the example embodiment for being limited only to herein propose, but should cover and fall into this
Invent all changes, equivalent and the refill within the scope of a kind of method for preparing SOT-MRAM hearth electrode.In addition, will not
Detailed description will omit well-known element of the invention, device and sub-circuit, in order to avoid obscure the embodiment of the present invention
Correlative detail.
Fig. 1 is the SOT hearth electrode material using this method preparation.Number of plies N meets N not less than 2.The thickness of every layer of material
It is all not necessarily to be consistent with type.
Embodiment 1:
By 2 tunics of preparation rather than homogenous material is grown to prepare the hearth electrode of SOT-MRAM.2 tunics, under
To the upper specially platinum with a thickness of 2nm and the tungsten with a thickness of 2nm；2 tunic, is successively sunk respectively by way of magnetron sputtering
Product.
Embodiment 2:
By 2 tunics of preparation rather than homogenous material is grown to prepare the hearth electrode of SOT-MRAM.2 tunics, under
To the upper specially topological insulator with a thickness of 20nm and the tungsten with a thickness of 0.4nm；2 tunic, by molecular beam epitaxy or
The mode of magnetron sputtering grows topological insulator, and tungsten is grown by way of magnetron sputtering.
Embodiment 3:
By 2 tunics of preparation rather than homogenous material is grown to prepare the hearth electrode of SOT-MRAM.2 tunics, under
To it is upper be specially thickness: the topological insulator of 40nm and with a thickness of the copper of 1nm；2 tunic, passes through molecular beam epitaxy or magnetic control
The mode of sputtering grows topological insulator, grows metallic copper by way of magnetron sputtering or chemical vapor deposition.
Embodiment 4:
By 3 tunics of preparation rather than homogenous material is grown to prepare the hearth electrode of SOT-MRAM.3 tunics, under
To the upper specially tantalum with a thickness of 3nm, the cobalt with a thickness of 1nm and with a thickness of the titanium of 1nm；3 tunic can successively be splashed by magnetic control
It penetrates, the modes such as molecular beam epitaxy, atomic layer deposition deposit respectively.
Embodiment 5:
By 7 tunics of preparation rather than homogenous material is grown to prepare the hearth electrode of SOT-MRAM.7 tunics, under
To it is upper be specially the tantalum with a thickness of 3nm, the cobalt with a thickness of 1nm, the nickel with a thickness of 1nm, the cobalt with a thickness of 1nm, with a thickness of 1nm's
Nickel, the cobalt with a thickness of 1nm, the gold with a thickness of 1nm；7 tunic can successively be deposited respectively by way of magnetron sputtering.
Fig. 2 is a kind of typical case of this method, i.e., overturns magnetic tunnel-junction with hearth electrode prepared by the method.Magnetic channel
Knot can be vertical or intra-face anisotropy.
Claims (9)
1. a kind of method for preparing SOT-MRAM hearth electrode, it is characterised in that: this method is grown by preparing multilayer film
Homogenous material prepares the hearth electrode of SOT-MRAM.
2. a kind of method for preparing SOT-MRAM hearth electrode according to claim 1, it is characterised in that: the multilayer
Film, the selection of every layer of material are as follows: have one kind of the non-magnetic material of strong SO coupling, or have weak spin-orbit coupling
One of non-magnetic material of conjunction or one of ferromagnetic material.
3. a kind of method for preparing SOT-MRAM hearth electrode according to claim 2, it is characterised in that: described having is strong
The non-magnetic material of SO coupling, including tantalum, tungsten, platinum, topological insulator, MX2；Wherein, MX2It is molecular formula shaped like MX2's
The two-dimentional non-magnetic material for having strong SO coupling.
4. a kind of method for preparing SOT-MRAM hearth electrode according to claim 3, it is characterised in that: the two dimension is non-
Magnetic material, including molybdenum disulfide, tungsten disulfide, telluride tungsten.
5. a kind of method for preparing SOT-MRAM hearth electrode according to claim 2, it is characterised in that: described having is weak
The non-magnetic material of SO coupling, including copper, silver, gold, titanium, graphene.
6. a kind of method for preparing SOT-MRAM hearth electrode according to claim 2, it is characterised in that: the ferromagnetic material
Material, including cobalt, nickel, iron-nickel alloy.
7. a kind of method for preparing SOT-MRAM hearth electrode according to claim 1, it is characterised in that: the multilayer film
The number of plies be no less than 2 layers.
8. a kind of method for preparing SOT-MRAM hearth electrode according to claim 1, it is characterised in that: the multilayer film
Structure, each layer of thickness is between 0 to 40 nanometer, and the thickness of every layer of material is without being consistent.
9. a kind of method for preparing SOT-MRAM hearth electrode according to claim 1, it is characterised in that: the multilayer film
Growth pattern, including magnetron sputtering, molecular beam epitaxy, atomic layer deposition, electron beam evaporation, physical/chemical vapor deposition.
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| CN201910079796.7A CN109888089A (en) | 2019-01-28 | 2019-01-28 | A method of preparing SOT-MRAM hearth electrode |
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| CN201910079796.7A CN109888089A (en) | 2019-01-28 | 2019-01-28 | A method of preparing SOT-MRAM hearth electrode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113361223A (en) * | 2021-06-09 | 2021-09-07 | 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) | Spin electronic process design system for SOT-MRAM related circuit |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170076769A1 (en) * | 2015-09-14 | 2017-03-16 | Kabushiki Kaisha Toshiba | Magnetic memory |
| CN108292702A (en) * | 2015-11-27 | 2018-07-17 | Tdk株式会社 | Magneto-resistance effect element, magnetic memory, magnetization inversion method and spin current magnetization inversion element |
| CN108886061A (en) * | 2017-02-27 | 2018-11-23 | Tdk株式会社 | Spin current magnetizes rotating element, magneto-resistance effect element and magnetic memory |
-
2019
- 2019-01-28 CN CN201910079796.7A patent/CN109888089A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170076769A1 (en) * | 2015-09-14 | 2017-03-16 | Kabushiki Kaisha Toshiba | Magnetic memory |
| CN108292702A (en) * | 2015-11-27 | 2018-07-17 | Tdk株式会社 | Magneto-resistance effect element, magnetic memory, magnetization inversion method and spin current magnetization inversion element |
| CN108886061A (en) * | 2017-02-27 | 2018-11-23 | Tdk株式会社 | Spin current magnetizes rotating element, magneto-resistance effect element and magnetic memory |
Non-Patent Citations (1)
| Title |
|---|
| V.P. AMIN 等: ""Interface-Generated Spin Currents"", 《PHYSICAL REVIEW LETTER》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113361223A (en) * | 2021-06-09 | 2021-09-07 | 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) | Spin electronic process design system for SOT-MRAM related circuit |
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Application publication date: 20190614 |