CN109873005A - Imaging sensor and forming method thereof - Google Patents
Imaging sensor and forming method thereof Download PDFInfo
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- CN109873005A CN109873005A CN201910284845.0A CN201910284845A CN109873005A CN 109873005 A CN109873005 A CN 109873005A CN 201910284845 A CN201910284845 A CN 201910284845A CN 109873005 A CN109873005 A CN 109873005A
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Abstract
A kind of imaging sensor and forming method thereof, method includes: offer semiconductor substrate, and the semiconductor substrate includes opposite the first face and the second face, and the semiconductor substrate includes several firstth areas；Changing luminous material floor is formed on firstth area of semiconductor substrate the second face surface；Filtering structure is formed in the changing luminous material layer and semiconductor substrate the second face surface.The method improves the performance of imaging sensor.
Description
Technical field
The present invention relates to imaging sensor manufacturing fields more particularly to a kind of imaging sensor and forming method thereof.
Background technique
Imaging sensor is a kind of semiconductor devices for converting optical signal into electric signal.Imaging sensor is divided into complementary gold
Belong to oxide (CMOS) imaging sensor and charge-coupled device (CCD) imaging sensor.Cmos image sensor has technique
Simply, easily with other devices are integrated, small in size, light-weight, small power consumption and it is at low cost the advantages that.Currently, cmos image sensor
Have been widely used for static digital camera, DV, medical photographic device and automobile-used photographic device etc..
Cmos image sensor includes (FSI) imaging sensor and back-illuminated type (BSI) imaging sensor front-illuminated.In back-illuminated
In formula imaging sensor, light is from the back surface incident of imaging sensor on light sensitive diode into imaging sensor, thus by light
Electric energy can be converted into.
However, the luminous sensitivity of imaging sensor is not high under half-light, low light environment, so as to cause imaging sensor
Performance is bad.
Summary of the invention
The technical problem to be solved by the present invention is to provide a kind of imaging sensors and forming method thereof, to improve imaging sensor
Performance.
In order to solve the above technical problems, the present invention provides a kind of imaging sensor, comprising: semiconductor substrate, it is described partly to lead
Body substrate includes opposite the first face and the second face, and the semiconductor substrate includes several firstth areas；Positioned at semiconductor substrate
The changing luminous material floor in one area, surface, the second face；Shine layer surface and the second face of semiconductor substrate surface are converted positioned at described
Filtering structure.
Optionally, firstth area includes the first pixel region and the second pixel region；The changing luminous material layer includes position
In the first changing luminous material layer on the first pixel region surface and the second changing luminous material positioned at the second pixel region surface
Layer；The filtering structure includes green color filter and blue color filter layer, and the green color filter is located at the first changing luminous material
Layer surface, the blue color filter layer are located at the second changing luminous material layer surface.
Optionally, the material of the changing luminous material layer includes: down-conversion luminescent material；The down-conversion luminescent material
It include: fluoride, oxide, oxyfluoride, halide or sulfide.
Optionally, the changing luminous material layer with a thickness of 450 angstroms~850 angstroms.
Optionally, the semiconductor substrate further includes third pixel region；The filtering structure further include: be located at the third
The red filter layer on the second face of pixel region surface.
Optionally, further includes: the dielectric layer between the second face of the red filter layer and third pixel region.
Optionally, further includes: the antireflection layer positioned at the second face of semiconductor substrate surface, the antireflection layer are located at conversion and shine
Between the second face of material layer and semiconductor substrate, and the antireflection layer is also located at the red filter layer and semiconductor substrate second
Between face.
Correspondingly, the present invention also provides the forming methods of any one of the above imaging sensor, comprising: provide semiconductor lining
Bottom, the semiconductor substrate include opposite the first face and the second face, and the semiconductor substrate includes several firstth areas；Described
The firstth area of semiconductor substrate the second face surface forms changing luminous material floor；In the changing luminous material layer and semiconductor substrate
Second face surface forms filtering structure.
Optionally, firstth area includes the first pixel region and the second pixel region；The changing luminous material layer includes position
In the first changing luminous material layer on the first pixel region surface and the second changing luminous material positioned at the second pixel region surface
Layer；The filtering structure includes green color filter and blue color filter layer, and the green color filter is located at the first changing luminous material
Layer surface, the blue color filter layer are located at the second changing luminous material layer surface；The forming method of described image sensor includes:
The first changing luminous material layer is formed on semiconductor substrate the first pixel region surface；In the second pixel region of semiconductor substrate surface shape
At the second changing luminous material layer, the first changing luminous material layer and the second changing luminous material layer constitute and convert the material that shines
The bed of material；Green light filter layer is formed in the first changing luminous material layer surface；Blue light is formed in the second changing luminous material layer surface
Filter layer.
Optionally, the semiconductor substrate further includes third pixel region；The filtering structure further include: be located at the third
The red filter layer on the second face of pixel region surface；The forming method of described image sensor further include: it is formed before filtering structure,
Dielectric layer is formed on semiconductor substrate third pixel region the second face surface, the dielectric layer is located at feux rouges filter layer and third pixel
Between the second face of area.
Optionally, the forming method of the dielectric layer includes: second in the firstth area of semiconductor substrate and third pixel region
Face surface forms initial medium layer；Patterned layer is formed in the initial medium layer surface, the patterned layer exposes first
The initial medium floor in area；Using the patterned layer as exposure mask, the initial medium floor in the firstth area of etching removal, in third pixel region table
Face forms dielectric layer, has the first opening between adjacent dielectric.
Optionally, the forming method of the changing luminous material layer include: it is described first opening in and dielectric layer surface
Form initial conversion luminous material layer；The initial conversion luminous material layer is planarized, until exposing dielectric layer surface, is formed
The changing luminous material layer.
Optionally, the technique for forming the initial conversion luminous material layer includes high temperature solid-state method synthetic method, hydrothermal synthesis
Method, sol-gel method, coprecipitation.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that
In the imaging sensor that technical solution of the present invention provides, the material of changing luminous material layer can absorb a height
In the case where energy photon, two or more lower energy photons are inspired.When enter filtering structure incident light in include height
When energy photon, the high-energy photon can be incident to the changing luminous material layer through the filtering structure；The conversion hair
Optical material layer, which absorbs to excite after the high-energy photon, produces multiple lower energy photons, and the wavelength of the lower energy photon is can
In light-exposed wave-length coverage.To sum up, the conversion by the changing luminous material layer to the high-energy photon in incident light, can increase
The lower energy photon number in the firstth area is entered, so as to improve the photoelectric conversion efficiency in the firstth area, to improve image sensing
The sensitivity of device.Moreover, because the wavelength for the lower energy photon that the changing luminous material layer inspires is in visible-range, because
This, can effectively improve the luminous sensitivity of the imaging sensor under half-light or low light environment.
Further, the material of the changing luminous material layer includes down-conversion luminescent material, and the luminous material of lower conversion
Material can spontaneously launch energy photons (blue light or green light) after the excitation by the photon of high-energy (ultraviolet light).
Therefore, after the shorter ultraviolet light-transmissive filter layer of wavelength enters changing luminous material layer, it can increase and enter first
Number of photons in pixel region and the second pixel region improves the first pixel region and the second pixel region photoelectric conversion efficiency, to mention
The high sensitivity of hi-vision sensor.Moreover, because the wavelength of lower energy photon is in visible-range, therefore can effectively improve dark
Imaging sensor luminous sensitivity under light or low light environment.
Detailed description of the invention
Fig. 1 is a kind of the schematic diagram of the section structure of imaging sensor；
Fig. 2 to Fig. 6 is the schematic diagram of the section structure of imaging sensor forming process in one embodiment of the invention；
Fig. 7 to Fig. 8 is the schematic diagram of the section structure of the imaging sensor forming process of another embodiment of the present invention.
Specific embodiment
As described in background, the performance of the imaging sensor of the prior art is poor.
Fig. 1 is a kind of the schematic diagram of the section structure of imaging sensor.
A kind of imaging sensor, with reference to Fig. 1, comprising: semiconductor substrate 100, the semiconductor substrate 100 have opposite
First face and the second face；Photosensitive structure 120 in semiconductor substrate 100,100 first face of semiconductor substrate expose
Photosensitive structure 120；Anti-reflection coating 101 positioned at 100 second face surface of semiconductor substrate；Positioned at 101 surface of anti-reflection coating
Antireflection layer 102；Colony structure positioned at 102 surface of antireflection layer, the Colony structure include grid layer 160, filter layer and thoroughly
Mirror layer 180.
Three pixel units of described image sensor, including green light pixel unit I, blue light pixel list are shown in Fig. 1
First II and feux rouges pixel unit III.
Filter layer in green light pixel unit I is G colour filter 171；Filter layer in blue light pixel unit II
For B colour filter 172；Filter layer in feux rouges pixel unit III is R colour filter 173.Due to only monochromatic light pass through it is described green
Light pixel unit I, blue light pixel unit II and feux rouges pixel unit III then pass through green light pixel unit I, blue light pixel unit
The light of filter layer is limited in II and feux rouges pixel unit III, and generated electron number is less, in dark field, image sensing
The luminous sensitivity of device is lower, poor so as to cause image sensor performance.
In the embodiment of the present invention, positioned at the changing luminous material layer of green light pixel region and blue light pixel region surface, Neng Gouzeng
Add the number of photons in the photosensitive structure for entering green light pixel region and blue light pixel region, photoelectric conversion efficiency is improved, to improve
The sensitivity of imaging sensor, and then improve the performance of imaging sensor.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
" surface " in this specification is not limited to directly contact for describing the relative positional relationship in space.
Fig. 2 to Fig. 6 is the schematic diagram of the section structure of imaging sensor forming process in one embodiment of the invention.
Referring to FIG. 2, providing semiconductor substrate 200, the semiconductor substrate 200 has opposite the first face and second
Face.
The semiconductor substrate 200 includes several firstth areas.
In the present embodiment, firstth area includes the first pixel region A and the second pixel region B, in the semiconductor substrate 200
With photosensitive structure 230, the photosensitive structure 230 is located at the semiconductor substrate of the first pixel region A and the second pixel region B
In 200.
In the present embodiment, the first pixel region A is green light pixel region；The second pixel region B is blue light pixel region.
In the present embodiment, 200 first face of semiconductor substrate exposes photosensitive structure 230.It is described in other embodiments
Photosensitive structure is located in semiconductor substrate, and the substrate 200 is not exposed from the photosensitive structure 230.
In the present embodiment, the semiconductor substrate 200 further includes third pixel region C；The photosensitive structure 230 is also located at
In the semiconductor substrate 200 of three pixel region C.It does not include third pixel region in other embodiments.
In the present embodiment, the third pixel region C is feux rouges pixel region.
The first pixel region A, the second pixel region B and third pixel region C are used to acquire light, and to light collected
Carry out photoelectric conversion.In the present embodiment, several first pixel region A, the second pixel region B and third pixel region C constitute pixel
Array.
It is subsequent also to form dielectric layer on 200 the second face surface third pixel region C of semiconductor substrate in the present embodiment.At it
In its embodiment, the second face third pixel region C surface can not also form dielectric layer.
The forming method of the changing luminous material layer 205 and dielectric layer specifically please refers to Fig. 3 to Fig. 5.
Referring to FIG. 3, forming initial medium layer 202 in 200 second face of semiconductor substrate.
The initial medium floor 202 covers 200 first area of semiconductor substrate and 200 third pixel region C of semiconductor substrate the
Two faces surface.
The initial medium layer 202 provides material layer to be subsequently formed dielectric layer.
The material of the initial medium layer 202 includes: silica, silicon nitride, silicon oxynitride, silicon oxide carbide, carbonitride of silicium
Or carbon silicon oxynitride.
In the present embodiment, the material of the initial medium layer 202 is silica.
The technique for forming the initial medium layer 202 includes: chemical vapor deposition process, physical gas-phase deposition or original
One of sublayer depositing operation is a variety of.
In the present embodiment, formed before initial medium layer 202, further includes: formed on 200 second face surface of semiconductor substrate
Antireflection layer 201, the antireflection layer 201 is used to reduce the reflection of light, to increase the transmission of light.
The material of the antireflection layer 201 includes: silica, silicon nitride, silicon oxynitride.
In the present embodiment, the material of the antireflection layer 201 is silicon nitride.
In other embodiments, additionally it is possible to not form antireflection layer on 200 second face surface of semiconductor substrate.
Referring to FIG. 4, the initial medium floor 202 in the firstth area of etching removal, in 200 third pixel region C of semiconductor substrate the
Two faces surface form dielectric layer 203, have the first opening 204 between the adjacent dielectric 203.
First opening 204 exposes 200 second pixel of 200 first pixel region A of semiconductor substrate and semiconductor substrate
The antireflection layer 201 of area's B surface.
The dielectric layer 203 is used to increase the transmission of light, while stopping as in changing luminous material layer formation process
Only layer.
The forming method of the dielectric layer 203 includes: to form initial medium layer on 200 second face surface of semiconductor substrate
202；Patterned layer (not shown) is formed on 202 surface of initial medium layer, the patterned layer exposes initial Jie in part
Matter layer 202；Using the patterned layer as exposure mask, the initial medium layer 202 of etching removal the first pixel region A and the second pixel region B,
Dielectric layer 203 is formed on the second face surface third pixel region C.
In the present embodiment, the material of the patterned layer is photoresist.It further include described in removal after forming dielectric layer 203
Patterned layer.The technique for removing the patterned layer is cineration technics.
Referring to FIG. 5, being formed and being turned on 200 first area the second face surface of semiconductor substrate after the opening of formation first 204
Change optical material layer 205.
The forming method of the changing luminous material layer 205 include: it is described first opening 204 in and 203 table of dielectric layer
Face forms initial conversion luminous material layer (not shown)；The initial conversion luminous material layer is planarized, until exposing medium
203 surface of layer, form the changing luminous material layer 205.
In the present embodiment, the changing luminous material layer 205 includes: the first conversion positioned at the first surface pixel region A
Luminous material layer and the second changing luminous material layer positioned at the second pixel region surface.
In other embodiments, the changing luminous material layer can also be only located at the first surface pixel region A or only position
In the second pixel region B surface.
The material of changing luminous material layer 205 can inspire two or two in the case where absorbing a high-energy photon
A above lower energy photon.When in the incident light for entering filtering structure including high-energy photon, described in the high-energy photon transmission
Filtering structure can be incident to the changing luminous material layer 205；The changing luminous material layer 205 absorbs the high-energy photon
After can excite and produce multiple lower energy photons, and the wavelength of the lower energy photon is in visible wavelength range.To sum up, pass through
The conversion of high-energy photon in 205 pairs of incident light of the changing luminous material layer, can increase the low energy light for entering the firstth area
Subnumber, so as to improve the photoelectric conversion efficiency in the firstth area, to improve the sensitivity of imaging sensor.Moreover, because
The wavelength for the lower energy photon that the changing luminous material layer 205 inspires is in visible-range, therefore, can effectively improve dark
The luminous sensitivity of imaging sensor under light or low light environment.
In the present embodiment, the material of the changing luminous material layer 205 includes: down-conversion luminescent material.
In other embodiments, the changing luminous material can also be other changing luminous materials.
The down-conversion luminescent material includes: one in fluoride, oxide, oxyfluoride, halide and sulfur compound
Kind or multiple combinations；The fluoride includes LaF3, YF3And NaYF3One of or multiple combinations；The oxide includes
Y2O3:Er3+Or doping Eu3+And Dy3+One of zinc oxide or multiple combinations.
In the present embodiment, the down-conversion luminescent material is oxide, and the oxide is doping Eu3+And Dy3+Oxidation
Zinc.
The changing luminous material layer 205 with a thickness of 450 angstroms~850 angstroms.
The thickness of the changing luminous material layer 205 is less than 450 angstroms, the visible light that changing luminous material layer 205 is excited
The limited amount of son, the effect for improving photoelectric conversion efficiency are limited；The thickness of the changing luminous material layer 205 is greater than 850 angstroms,
The translucency of changing luminous material layer is poor, and photosensitive structure enters light quantity reduction, to influence the performance of imaging sensor.
The technique for forming the initial conversion luminous material layer includes high temperature solid-state method synthetic method, hydrothermal synthesis method, colloidal sol-
Gel method, coprecipitation.
In the present embodiment, the technique of the initial conversion luminous material layer is coprecipitation.
The material of the changing luminous material layer 205 includes down-conversion luminescent material, and the down-conversion luminescent material exists
After excitation by the photon (such as ultraviolet light) of high-energy, it can spontaneously launch energy photons (such as blue light or green
Light).Therefore, after the filtering structure that the shorter ultraviolet light-transmissive of wavelength is subsequently formed enters changing luminous material layer, energy
It is enough to increase the number of photons entered in the first pixel region A and the second pixel region B, make the first pixel region A and the second pixel region B photoelectricity
Transfer efficiency improves, to improve the sensitivity of imaging sensor.Moreover, because the wavelength of lower energy photon is in visible-range
It is interior, therefore the imaging sensor luminous sensitivity under half-light or low light environment can be effectively improved.
Referring to FIG. 6, forming green light filter layer 271 on 205 surface of the first pixel region A changing luminous material layer；Second
205 surface of pixel region B changing luminous material layer forms blue light filter layer 272.
The green light filter layer 271 and blue light filter layer 272 constitute filtering structure.
In the present embodiment, the filtering structure further include: in the feux rouges filter that 203 surface of third pixel region C dielectric layer is formed
Photosphere 273.
Natural light is white light made of the set of multiple color of light, and natural light is after filter layer, only part specific wavelength
Colored light can pass through, to generate specific colored light.
The material of the green light filter layer 271 includes the organic material doped with green pigment.Natural light is filtered by green light
After photosphere 271, only part green light can pass through, to generate green light.
The material of the blue light filter layer 272 includes the organic material doped with blue pigment.Natural light is filtered by blue light
After photosphere 272, only some blue light can pass through, to generate blue light.
The material of the feux rouges filter layer 273 includes the organic material doped with red pigments.Natural light is filtered by feux rouges
After photosphere 273, only part feux rouges can pass through, to generate feux rouges.
In the present embodiment, formed before green light filter layer 271 and blue light filter layer 272, further includes: in first pixel
205 surface of changing luminous material floor of area A and the second pixel region B and 203 surface of third pixel region C dielectric layer form grid
Layer 270, has the second opening between adjacent gate compartment 270, and second opening exposes part the first pixel region A and part the
203 surface of 205 surface of changing luminous material layer and part third pixel region C dielectric layer of two pixel region B.
Green light filter layer 271 is formed in the second opening of the first pixel region A；Second in the second pixel region B opens
Blue light filter layer 272 is formed in mouthful；Feux rouges filter layer 273 is formed in the second opening of third pixel region C.The grid layer
270 tops are flushed with green light filter layer 271 and 272 top surface of blue light filter layer.
After forming green light filter layer 271 and blue light filter layer 272, further includes: filtered in the green light filter layer 271 and blue light
272 surface of photosphere forms lens jacket 280.
In the present embodiment, the lens jacket 280 also covers 273 surface of feux rouges filter layer.
The lens jacket 280 is for changing optical path, so that light enters corresponding filter layer and corresponding along specific optical path
Photosensitive structure.
The material of the lens jacket 280 includes: organic material or glass.
Correspondingly, the present embodiment also provides a kind of imaging sensor formed using the above method, with continued reference to FIG. 6,
It include: semiconductor substrate 200, the semiconductor substrate 200 includes opposite the first face and the second face, the semiconductor substrate
200 include several firstth areas；Changing luminous material floor 205 positioned at 200 first area of semiconductor substrate the second face surface；Positioned at institute
State the filtering structure on 200 second face surface of 205 surface of changing luminous material layer and semiconductor substrate.
Firstth area includes the first pixel region A and the second pixel region B；The changing luminous material layer 205 includes being located at
The first changing luminous material layer on the first surface pixel region A and the second changing luminous material positioned at the second pixel region B surface
Layer；The filtering structure includes green color filter 271 and blue color filter layer 272, and the green color filter 271 is located at the first conversion
Luminescent material layer surface, the blue color filter layer 272 are located at the second changing luminous material layer surface.
The material of the changing luminous material layer 205 includes: down-conversion luminescent material.
The material of the down-conversion luminescent material includes: fluoride, oxide, oxyfluoride, halide and sulfur compound.
The changing luminous material layer with a thickness of 450 angstroms~850 angstroms.
The semiconductor substrate 200 further includes third pixel region C；The filtering structure further include: be located at the third picture
The red filter layer 273 on plain the second face area C surface.
Imaging sensor further include: the dielectric layer between the second face of the red filter layer 273 and third pixel region C
203。
Described image sensor further include: the antireflection layer 201 positioned at 200 second face of semiconductor substrate；The antireflection layer 201
Between 200 second face of changing luminous material layer 205 and semiconductor substrate, and the antireflection layer 201 is also located at the red
Between 200 second face of filter layer 273 and semiconductor substrate.
The semiconductor substrate 200 is no longer described in detail referring to the record of Fig. 2 and previous embodiment.
The green light filter layer 271, the structure of blue light filter layer 272 and feux rouges filter layer 273, material and reference by location figure
6 and previous embodiment record, be no longer described in detail.
Fig. 7 to Fig. 8 is the schematic diagram of the section structure of the imaging sensor forming process of another embodiment of the present invention.
Referring to FIG. 7, providing semiconductor substrate 300, the semiconductor substrate 300 has opposite the first face and second
Face.
The semiconductor substrate 300 includes several firstth areas.
In the present embodiment, firstth area includes the first pixel region A and the second pixel region B, in the semiconductor substrate 300
With photosensitive structure 330, the photosensitive structure 330 is located at the semiconductor substrate of the first pixel region A and the second pixel region B
In 300.
In the present embodiment, the first pixel region A is green light pixel region；The second pixel region B is blue light pixel region.
In the present embodiment, 300 first face of semiconductor substrate exposes photosensitive structure 330.
In the present embodiment, the semiconductor substrate 300 further includes third pixel region C；The photosensitive structure 330 is also located at
In the semiconductor substrate 300 of three pixel region C.
In the present embodiment, the third pixel region C is feux rouges pixel region.
The semiconductor substrate 300 is used to provide Process ba- sis for the formation of the photosensitive structure 330.
There is isolation structure 320,300 first face of semiconductor substrate is sudden and violent in the semiconductor substrate 300 in adjacent pixel area
Expose isolation structure 320.
The isolation structure 320 is for being isolated adjacent pixel unit.
In the present embodiment, the material of the semiconductor substrate 300 is monocrystalline silicon.The semiconductor substrate 300 can also be
Polysilicon or amorphous silicon.The material of the semiconductor substrate 300 can also be the semiconductor materials such as germanium, SiGe, GaAs.Institute
State semiconductor substrate 300 can also be other classes such as silicon substrate, the germanium substrate on insulator or glass substrate on insulator
The substrate of type.
The photosensitive structure 330 is for absorbing light and carrying out photoelectric conversion.
In the present embodiment, the photosensitive structure 330 is light sensitive diode.In other embodiments, the photosensitive structure may be used also
To be the component of other realization photoelectric converting functions such as photosensitive metal-oxide-semiconductor.
In the present embodiment, described image sensor is back side illumination image sensor, further includes: in semiconductor substrate 300
Surface forms interconnection structure 340 on one side；Support plate 350 is provided, support plate 350 is bonded with interconnection structure 340.
The interconnection architecture 340 is for being handled and being transmitted the information of photosensitive structure 330.
The interconnection structure 340 includes plug and multiple layer metal conductor layer, and the material of the metal carbonyl conducting layer is copper.
In the present embodiment, further includes: deep trench isolation structure 360 is formed in the semiconductor substrate 300 in adjacent pixel area,
300 second face of semiconductor substrate exposes deep trench isolation structure 360.
The deep trench isolation structure 360 is used to prevent the electrical cross talk between adjacent pixel unit.
Referring to FIG. 8, forming changing luminous material floor 205 on 300 first area the second face surface of semiconductor substrate；?
The changing luminous material layer 205 and 300 second face surface of semiconductor substrate form filtering structure.
It is formed and is turned in 300 first pixel region A of semiconductor substrate and 300 second the second face surface pixel region B of semiconductor substrate
Change optical material layer 205.
It is described conversion luminescent layer 205 include: positioned at the first surface pixel region A the first changing luminous material layer and be located at
Second changing luminous material layer of the second pixel region B surface.
The filtering structure includes: green color filter 271 and blue color filter layer 272, and the green color filter 271 is located at the
One changing luminous material layer surface, the blue color filter layer 272 are located at the second changing luminous material layer surface.
Dielectric layer 203 is formed on 300 the second face surface third pixel region C of semiconductor substrate.
In the present embodiment, formed before dielectric layer 203 and changing luminous material layer 205, further includes: in semiconductor substrate
200 second faces surface form antireflection layer 201.
Further include: feux rouges filter layer 273 is formed on 203 surface of third pixel region C dielectric layer.
In the present embodiment, formed before green light filter layer 271, blue light filter layer 272 and feux rouges filter layer 273, further includes:
205 surface of changing luminous material layer and third pixel region C dielectric layer in the first pixel region A and the second pixel region B
203 surfaces form grid layer 270.
After forming green light filter layer 271, blue light filter layer 272 and feux rouges filter layer 273, further includes: filtered in the green light
Photosphere 271, blue light filter layer 272 and 273 surface of feux rouges filter layer form lens jacket 280.
The changing luminous material layer 205, dielectric layer 203, antireflection layer 201, grid layer 270, green light filter layer 271, indigo plant
Material, structure and forming method such as Fig. 8 and previous embodiment institute of light filter layer 272 and feux rouges filter layer 273 and lens jacket 280
It states, this will not be repeated here.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (13)
1. a kind of imaging sensor characterized by comprising
Semiconductor substrate, the semiconductor substrate include opposite the first face and the second face, and the semiconductor substrate includes several
Firstth area；
Changing luminous material floor positioned at the firstth area of semiconductor substrate the second face surface；
Positioned at the filtering structure for converting shine layer surface and the second face of semiconductor substrate surface.
2. imaging sensor according to claim 1, which is characterized in that firstth area includes the first pixel region and second
Pixel region；The changing luminous material layer include positioned at the first pixel region surface the first changing luminous material layer and be located at the
The second changing luminous material layer on two pixel region surfaces；The filtering structure includes green color filter and blue color filter layer, described
Green color filter is located at the first changing luminous material layer surface, and the blue color filter layer is located at the second changing luminous material layer table
Face.
3. imaging sensor according to claim 2, which is characterized in that the material of the changing luminous material layer includes:
Down-conversion luminescent material；The down-conversion luminescent material includes: fluoride, oxide, oxyfluoride, halide or sulfide.
4. imaging sensor according to claim 1, which is characterized in that the changing luminous material layer with a thickness of 450
Angstrom~850 angstroms.
5. imaging sensor according to claim 1 or 2, which is characterized in that the semiconductor substrate further includes third picture
Plain area；The filtering structure further include: the red filter layer positioned at second face of third pixel region surface.
6. imaging sensor according to claim 5, which is characterized in that further include: it is located at the red filter layer and the
Dielectric layer between three the second faces of pixel region.
7. imaging sensor according to claim 5, which is characterized in that further include: it is located at the second face of semiconductor substrate table
The antireflection layer in face, the antireflection layer is located between the second face of changing luminous material layer and semiconductor substrate, and the antireflection layer is also
Between the second face of the red filter layer and semiconductor substrate.
8. a kind of forming method of imaging sensor as described in any one of claim 1 to 7 characterized by comprising
Semiconductor substrate is provided, the semiconductor substrate includes opposite the first face and the second face, and the semiconductor substrate includes
Several firstth areas；
Changing luminous material floor is formed on firstth area of semiconductor substrate the second face surface；
Filtering structure is formed in the changing luminous material layer and semiconductor substrate the second face surface.
9. the forming method of imaging sensor according to claim 7, which is characterized in that firstth area includes the first picture
Plain area and the second pixel region；The changing luminous material layer includes the first changing luminous material layer positioned at the first pixel region surface
And the second changing luminous material layer positioned at the second pixel region surface；The filtering structure includes green color filter and blue filter
Photosphere, the green color filter are located at the first changing luminous material layer surface, and the blue color filter layer is located at the second conversion and shines
Material surface；The forming method of described image sensor includes: to form first turn on semiconductor substrate the first pixel region surface
Change optical material layer；The second changing luminous material layer, the first conversion hair are formed on semiconductor substrate the second pixel region surface
Optical material layer and the second changing luminous material layer constitute changing luminous material layer；It is formed in the first changing luminous material layer surface green
Light filter layer；Blue light filter layer is formed on the second conversion layer surface.
10. the forming method of imaging sensor according to claim 8, which is characterized in that the semiconductor substrate is also wrapped
Include third pixel region；The filtering structure further include: the red filter layer positioned at second face of third pixel region surface；It is described
The forming method of imaging sensor further include: formed before filtering structure, on the second face of semiconductor substrate third pixel region surface
Dielectric layer is formed, the dielectric layer is located between the second face of feux rouges filter layer and third pixel region.
11. the forming method of imaging sensor according to claim 10, which is characterized in that the formation side of the dielectric layer
Method includes: to form initial medium floor in the firstth area of semiconductor substrate and the second face surface of third pixel region；In initial Jie
Matter layer surface forms patterned layer, and the patterned layer exposes the initial medium floor in the firstth area；It is to cover with the patterned layer
Film, the initial medium floor in the firstth area of etching removal form dielectric layer on third pixel region surface, have the between adjacent dielectric
One opening.
12. the forming method of imaging sensor according to claim 10, which is characterized in that the changing luminous material layer
Forming method include: first opening in and dielectric layer surface formed initial conversion luminous material layer；It planarizes described initial
Changing luminous material layer forms the changing luminous material layer until exposing dielectric layer surface.
13. the forming method of imaging sensor according to claim 12, which is characterized in that form the initial conversion hair
The technique of optical material layer includes high temperature solid-state method synthetic method, hydrothermal synthesis method, sol-gel method, coprecipitation.
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| CN113130525A (en) * | 2021-03-15 | 2021-07-16 | 常州大学 | Triode image sensor |
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Application publication date: 20190611 |