CN109786532A - A kind of GaN base light emitting epitaxial wafer and preparation method thereof - Google Patents
A kind of GaN base light emitting epitaxial wafer and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a kind of GaN base light emitting epitaxial wafers and preparation method thereof, belong to GaN base light emitting field.GaN buffer layer, layer of undoped gan, n-type doping GaN layer, defect barrier layer, multiple quantum well layer, electronic barrier layer, p-type GaN layer and the p-type contact layer that the LED epitaxial slice includes: substrate, is sequentially deposited over the substrate, the defect barrier layer includes AlN sublayer and n-type doping AlGaN sublayer, and the AlN sublayer is between the n-type doping GaN layer and the N-type AlGaN sublayer.
Description
Technical field
The present invention relates to GaN base light emitting field, in particular to a kind of GaN base light emitting epitaxial wafer and its system
Preparation Method.
Background technique
GaN (gallium nitride) base LED (Light Emitting Diode, light emitting diode), also known as GaN base LED chip, one
As include epitaxial wafer and extension on piece preparation electrode.Epitaxial wafer generally includes: substrate and the GaN grown on substrate
Base epitaxial layer.GaN base epitaxial layer includes the buffer layer of stacked above one another, layer of undoped gan, N-type GaN layer, N-type AlGaN layer, MQW
(Multiple Quantum Well, multiple quantum wells) layer, electronic barrier layer, p-type GaN layer and contact layer.When there is electric current injection
When GaN base LED, the hole of the p type island regions such as the electronics of the N-type regions such as N-type GaN layer and p-type GaN layer enters MQW active area and compound,
Issue visible light.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems: due to substrate (carbonization
Silicon, sapphire, silicon wafer etc.) and GaN between there are the difference of lattice constant, during growing GaN base epitaxial layer on substrate
Meeting cumulative stress and defect, for example, the threading defect densities of N-type AlGaN layer are higher, stress release during the deposition process leads to position
The leak channel that wrong generation upwardly extends, this will affect the crystal growth quality of bottom and quantum well region, influences carrier transport
And quantum efficiency.
Summary of the invention
The embodiment of the invention provides a kind of GaN base light emitting epitaxial wafers and preparation method thereof, can effectively block
Bottom leak channel promotes the crystal growth quality of bottom and quantum well region.The technical solution is as follows:
In a first aspect, providing a kind of GaN base light emitting epitaxial wafer, the LED epitaxial slice includes: lining
Bottom, the GaN buffer layer being sequentially deposited over the substrate, layer of undoped gan, n-type doping GaN layer, defect barrier layer, Multiple-quantum
Well layer, electronic barrier layer, p-type GaN layer and p-type contact layer, the defect barrier layer include AlN sublayer and n-type doping
AlGaN sublayer, the AlN sublayer is between the n-type doping GaN layer and the N-type AlGaN sublayer.
Optionally, the AlN sublayer with a thickness of 50~150nm, the n-type doping AlGaN sublayer with a thickness of 50~
100nm。
Optionally, the molar concentration of Al is less than or equal to 0.2 in the n-type doping AlGaN sublayer.
Optionally, the n-type doping of the n-type doping AlGaN sublayer is Si doping, and Si doping concentration is 1.5*1018cm-3
~3*1018cm-3。
Second aspect provides a kind of preparation method of GaN base light emitting epitaxial wafer, which comprises
Substrate is provided；
It is sequentially deposited GaN buffer layer, layer of undoped gan, n-type doping GaN layer, defect barrier layer, more over the substrate
Quantum well layer, electronic barrier layer, p-type GaN layer and p-type contact layer, the defect barrier layer include AlN sublayer and n-type doping
AlGaN sublayer, the AlN sublayer is between the n-type doping GaN layer and the N-type AlGaN sublayer.
Optionally, the AlN sublayer with a thickness of 50~150nm, the n-type doping AlGaN sublayer with a thickness of 50~
100nm。
Optionally, the molar concentration of Al is less than or equal to 0.2 in the n-type doping AlGaN sublayer.
Optionally, the n-type doping of the n-type doping AlGaN sublayer is Si doping, and Si doping concentration is 1.5*1018cm-3
~3*1018cm-3。
Optionally, the growth temperature of the AlN sublayer is 1000~1300 DEG C, the growth of the n-type doping AlGaN sublayer
Temperature is 800~1100 DEG C.
Optionally, the growth pressure of the AlN sublayer and the n-type doping AlGaN sublayer is 300~500Torr.
Technical solution provided in an embodiment of the present invention has the benefit that by defect barrier layer include AlN sublayer
With n-type doping AlGaN sublayer, AlN sublayer is located between n-type doping GaN layer and N-type AlGaN sublayer, compared to traditional N-type
AlGaN defect barrier layer is adulterated, one layer of AlN is increased, since AlN can increase the mobility of AlGaN sub-layer surface Al atom, makes
The doping of Al is more uniform in AlGaN sublayer, so that the crystal growth quality of this layer improves, it is thereby possible to reduce defect barrier layer
Defect concentration blocks bottom leak channel, this will effectively improve the length of the crystal quality and well region gallium nitride on defect barrier layer
Crystalloid amount then promotes the antistatic effect and quantum well region Carrier recombination efficiency of light emitting diode, promotes the luminous effect of device
Rate.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 and Fig. 2 is a kind of process of the preparation method of GaN base light emitting epitaxial wafer provided in an embodiment of the present invention
Figure；
Fig. 3 is a kind of structural schematic diagram of GaN base light emitting epitaxial wafer provided in an embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Fig. 1 shows a kind of preparation method of GaN base light emitting epitaxial wafer provided in an embodiment of the present invention.Referring to figure
1, this method process includes the following steps.
Step 101 provides substrate.
Step 102 is sequentially deposited GaN buffer layer, layer of undoped gan, n-type doping GaN layer, defect blocking on substrate
Layer, multiple quantum well layer, electronic barrier layer, p-type GaN layer and p-type contact layer.
Wherein, defect barrier layer includes AlN sublayer and n-type doping AlGaN sublayer, and AlN sublayer is located at n-type doping GaN layer
Between N-type AlGaN sublayer.
The embodiment of the present invention includes AlN sublayer and n-type doping AlGaN sublayer by defect barrier layer, and AlN sublayer is located at N
Between type doped gan layer and N-type AlGaN sublayer, compared to traditional n-type doping AlGaN defect barrier layer, one layer is increased
AlN keeps the doping of Al in AlGaN sublayer more uniform, makes since AlN can increase the mobility of AlGaN sub-layer surface Al atom
The crystal growth quality for obtaining this layer improves, it is thereby possible to reduce the defect concentration on defect barrier layer, blocks bottom leak channel, this will
The crystal quality on defect barrier layer and the crystal growth quality of well region gallium nitride are effectively improved, it is quiet then to promote resisting for light emitting diode
Electric energy power and quantum well region Carrier recombination efficiency promote device light emitting efficiency.
Fig. 2 shows a kind of preparation methods of GaN base light emitting epitaxial wafer provided in an embodiment of the present invention.Referring to figure
2, this method process includes the following steps.
Step 201 provides substrate, and substrate is placed into MOCVD (Metal-organic Chemical Vapor
Deposition, metallo-organic compound chemical gaseous phase deposition) equipment reaction chamber in.
Illustratively, substrate can be PSS (Patterned Sapphire Substrate, graphic sapphire lining
Bottom).PSS is in Sapphire Substrate (Al2O3) on grow dry etching exposure mask, exposure mask is carved into figure with the photoetching process of standard
Shape etches sapphire using ICP (Inductively Coupled Plasma reacts coupled plasma) lithographic technique, and
It is formed after removing exposure mask.The growth GaN material on PSS makes longitudinal extension of GaN material become horizontal extension.It on the one hand can be with
The dislocation density of GaN epitaxy material is effectively reduced, to reduce the non-radiative recombination of active area, reduces reverse leakage current, improves
The service life of LED；The light that another aspect active area issues changes total reflection light through GaN and Sapphire Substrate interface Multiple Scattering
The angle of emergence, the probability that the light of flip LED is emitted from Sapphire Substrate is increased, to improve the extraction efficiency of light.
Specifically, substrate is placed on the substrate pallet in the reaction chamber of MOCVD device, and substrate pallet is added
Heat and driving substrate pallet rotation.Illustratively, substrate pallet can be graphite pallet.When substrate pallet rotates, substrate will be with
The rotation of substrate pallet.
In the present embodiment, the GaN base epitaxial layer in MOCVD method growth substrates will be passed through.It, can in MOCVD method
Using using high pure nitrogen or hydrogen, as carrier gas, ammonia is as nitrogen source, trimethyl gallium or triethyl-gallium as gallium source, trimethyl
Indium is as indium source, and for trimethyl aluminium as silicon source, N type dopant selects silane, and P-type dopant selects two luxuriant magnesium.It needs to illustrate
It is that the temperature and pressure controlled in following growth courses actually refers to the temperature and pressure in the reaction chamber of MOCVD device.
Step 202 handles substrate.
Wherein, handle to substrate is to clean substrate surface.Illustratively, include: to the processing mode of substrate
It in hydrogen atmosphere in reaction chamber and maintains the temperature between 1000 DEG C -1200 DEG C, anneals 8 minutes；Nitrogen is carried out after anneal
Change processing.
Step 203 deposits GaN buffer layer on substrate.
Step 203 may include: that the temperature of reaction chamber is dropped to 400 DEG C -600 DEG C, keep growth pressure in 400Torr
To the low temperature GaN buffer buffer layers between 600Torr, growing 15 to 35nm thickness.
Step 204 makes annealing treatment GaN buffer layer.
Wherein, annealing temperature is at 1000 DEG C~1200 DEG C, and pressure range is 400Torr~600Torr, and the time was at 5 minutes
~10 minutes.
Step 205 deposits layer of undoped gan on GaN buffer layer.
Illustratively, the growth temperature of layer of undoped gan is 1000 DEG C -1100 DEG C, and growth thickness is 1 to 5 micron, growth
Pressure is 100Torr to 500Torr.
Step 206, the deposited n-type doped gan layer in layer of undoped gan.
Illustratively, for the thickness of n-type doping GaN layer between 1~5 micron, growth temperature is raw at 1000 DEG C~1200 DEG C
Long pressure is in 100Torr between 500Torr, and Si doping concentration is 1 × 1018cm-3~1 × 1019cm-3Between.
Step 207 deposits defect barrier layer in n-type doping GaN layer.
Wherein, defect barrier layer includes AlN sublayer and n-type doping AlGaN sublayer, and AlN sublayer is located at n-type doping GaN layer
Between N-type AlGaN sublayer.Based on this, this step 207 includes the following steps.
The first step, the depositing Al N sublayer in n-type doping GaN layer.
Illustratively, the growth temperature of AlN sublayer is 1000~1300 DEG C, and growth pressure is 300~500Torr, AlN
Layer with a thickness of 50~150nm.
Second step, deposited n-type adulterates AlGaN sublayer in AlN sublayer.
Illustratively, the growth temperature of n-type doping AlGaN sublayer is lower than the growth temperature of AlN sublayer, n-type doping AlGaN
The growth temperature of sublayer is 800~1100 DEG C, and the growth pressure of n-type doping AlGaN sublayer is 300~500Torr, n-type doping
AlGaN sublayer with a thickness of 50~100nm.
High growth temperature is used by AlN sublayer, and the growth temperature of n-type doping AlGaN sublayer is slightly less than the life of AlN sublayer
Long temperature, since AlN layer when temperature is higher before AlGaN sublayer can further increase AlGaN layer surface A l atom
Mobility keeps the doping of Al in AlGaN layer more uniform, so that the crystal growth quality of this layer, which improves, reduces defect concentration.
Illustratively, the molar concentration of Al is less than or equal to 0.2 in n-type doping AlGaN sublayer.Preferably, n-type doping
The molar concentration of Al is 0.1~0.2 in AlGaN sublayer.By n-type doping AlGaN sublayer have lower Al constituent content, one
Aspect can be realized the suitable electronic blocking effect of intensity, and on the other hand can be avoided doping excessively causes device voltage to increase.
Illustratively, the n-type doping of n-type doping AlGaN sublayer is Si doping, and Si doping concentration is 1.5*1018cm-3~
3*1018cm-3。
Illustratively, Si doping concentration is lower than Si doping concentration in n-type doping GaN layer in n-type doping AlGaN sublayer.It is logical
N-type doping AlGaN sublayer is crossed with lower Si doping concentration, it is low that Si mixes concentration, reduces impurity doping in epitaxial wafer, avoided
Degree increases impurity doping and increases defect concentration.
It is described below when the thickness of AlN sublayer and n-type doping AlGaN sublayer is fixed, the growth temperature of AlN sublayer
The crystal of degree, AlGaN sublayer Al molar concentration and AlGaN sublayer Si concentration three variation to LED chip made of epitaxial wafer
The influence of quality (yield) and light emission luminance.Table 1 is shown when AlN sublayer is with a thickness of 20-50nm and n-type doping AlGaN
When layer is with a thickness of 50-150nm, growth temperature, AlGaN sublayer Al molar concentration and the AlGaN sublayer Si concentration of AlN sublayer
Three changes the influence to crystal quality (yield) and light emission luminance of LED chip made of epitaxial wafer.As it can be seen from table 1
When AlN sublayer is with a thickness of 20-50nm and n-type doping ALGaN molecular layers thick is 50-150nm, AlN sublayer temperature takes 800-
1000 DEG C, molar concentration≤0.2 sublayer Al AlGaN and AlGaN sublayer Si concentration take 0.5E18cm-3~1.5E18cm-3, this
When, the brightness of LED chip is maximum, reach 197.6mw, and LED chip yield reaches 98.5%.
Table 1
Table 2 is shown when AlN sublayer is with a thickness of 50-150nm and n-type doping AlGaN molecular layers thick is 50-150nm,
Epitaxial wafer is made in growth temperature, AlGaN sublayer Al molar concentration and the AlGaN sublayer Si concentration three variation of AlN sublayer
LED chip crystal quality (yield) and light emission luminance influence.From table 2 it can be seen that when AlN sublayer is with a thickness of 50-
When 150nm and n-type doping ALGaN molecular layers thick are 50-150nm, AlN sublayer temperature takes 1000-1300 DEG C, AlGaN sublayer Al
Molar concentration≤0.2 and AlGaN sublayer Si concentration take 1.5E18cm-3~3E18cm-3, at this moment, the brightness of LED chip is most
Greatly, reach 198.2mw, and LED chip yield reaches 99.2%.
Table 2
Table 3 is shown when AlN sublayer with a thickness of 150-200nm and n-type doping AlGaN molecular layers thick is 50-150nm
When, growth temperature, AlGaN sublayer Al molar concentration and the AlGaN sublayer Si concentration three of AlN sublayer change to epitaxial wafer
The influence of crystal quality (yield) and light emission luminance of manufactured LED chip.From table 3 it can be seen that when AlN sublayer with a thickness of
When 50-150nm and n-type doping ALGaN molecular layers thick are 50-150nm, AlN sublayer temperature takes 800-1000 DEG C, AlGaN sublayer
Molar concentration≤0.2 Al and AlGaN sublayer Si concentration take 1.5E18cm-3~3E18cm-3, at this moment, the brightness of LED chip is most
Greatly, reach 197.1mw, and LED chip yield reaches 94.7%.
Table 3
Step 208 deposits multiple quantum well layer on defect barrier layer.
Wherein, multiple quantum well layer is the In in 5 to 15 periodsaGa1-aN (0 < a < 0.5) Quantum Well and GaN quantum build alternating
The superlattice structure of growth.The thickness of Quantum Well is in 3nm or so, and the range of growth temperature is between 720 DEG C -829 DEG C, pressure limit
Between 100Torr and 500Torr: the thickness that quantum is built is in 9nm between 20nm, and growth temperature is at 850 DEG C -959 DEG C, growth pressure
Power is between 100Torr to 500Torr.
Step 209 grows electronic barrier layer on multiple quantum well layer.
Illustratively, electronic barrier layer is p-type AlbGa1-bN (0.1 <b < 0.5) electronic barrier layer, growth temperature is at 850 DEG C
Between 1080 DEG C, growth pressure is between 200Torr and 500Torr, and growth thickness is in 50nm between 150nm.
Step 210 deposits p-type GaN layer on electronic barrier layer.
Illustratively, the growth temperature of p-type GaN layer be 850 DEG C~1080 DEG C, growth pressure be 100torr~
300torr, the thickness of p-type GaN layer can be 100nm~800nm.
Step 211 deposits p-type contact layer in p-type GaN layer.
Illustratively, p-type contact layer is GaN or InGaN layer, with a thickness of 5nm between 300nm, growth temperature area
Between be 850 DEG C~1050 DEG C, growth pressure section be 100Torr~300Torr.
Illustratively, after the growth of p-type contact layer, the reaction cavity temperature of MOCVD device is reduced, in nitrogen atmosphere
Middle annealing, annealing temperature section are 650 DEG C~850 DEG C, make annealing treatment 5 to 15 minutes, are down to room temperature, it is raw to complete extension
It is long.
The embodiment of the present invention includes AlN sublayer and n-type doping AlGaN sublayer by defect barrier layer, and AlN sublayer is located at N
Between type doped gan layer and N-type AlGaN sublayer, compared to traditional n-type doping AlGaN defect barrier layer, one layer is increased
AlN keeps the doping of Al in AlGaN sublayer more uniform, makes since AlN can increase the mobility of AlGaN sub-layer surface Al atom
The crystal growth quality for obtaining this layer improves, it is thereby possible to reduce the defect concentration on defect barrier layer, blocks bottom leak channel, this will
The crystal quality on defect barrier layer and the crystal growth quality of well region gallium nitride are effectively improved, it is quiet then to promote resisting for light emitting diode
Electric energy power and quantum well region Carrier recombination efficiency promote device light emitting efficiency.
Fig. 3 shows a kind of GaN base light emitting epitaxial wafer provided in an embodiment of the present invention.Illustratively, the extension
Piece can by Fig. 1 or Fig. 2 shows method be prepared.Referring to Fig. 3, the LED epitaxial slice include: substrate 1 and
The GaN buffer layer 2 that is sequentially deposited on substrate 1, layer of undoped gan 3, n-type doping GaN layer 4, defect barrier layer 5, multiple quantum wells
Layer 6, electronic barrier layer 7, p-type GaN layer 8 and p-type contact layer 9.Wherein, defect barrier layer 5 includes AlN sublayer 51 and n-type doping
AlGaN sublayer 52.AlN sublayer 51 is located between n-type doping GaN layer 4 and N-type AlGaN sublayer 52.
Include AlN sublayer and n-type doping AlGaN sublayer by defect barrier layer, AlN sublayer be located at n-type doping GaN layer with
Between N-type AlGaN sublayer, compared to traditional n-type doping AlGaN defect barrier layer, one layer of AlN is increased, since AlN can increase
The mobility for adding AlGaN sub-layer surface Al atom, keeps the doping of Al in AlGaN sublayer more uniform, so that the long crystalloid of this layer
Quantitative change is good, it is thereby possible to reduce the defect concentration on defect barrier layer, blocks bottom leak channel, this will effectively improve defect resistance
The crystal quality of barrier and the crystal growth quality of well region gallium nitride then promote the antistatic effect and Quantum Well of light emitting diode
Area's Carrier recombination efficiency promotes device light emitting efficiency.
Illustratively, substrate 1 is Sapphire Substrate.
Illustratively, GaN buffer layer 2 is low temperature GaN buffer, with a thickness of 15~35nm.
Illustratively, layer of undoped gan 3 with a thickness of 1~5 μm.
Illustratively, the thickness of n-type doping GaN layer 4 can be 1~5 μm, and Si, Si doping are adulterated in n-type doping GaN layer 4
Concentration is 1018cm-3-1019cm-3Between.
Illustratively, in defect barrier layer 5, AlN sublayer 51 with a thickness of 50~150nm, n-type doping AlGaN sublayer 52
With a thickness of 50~100nm.That is, defect barrier layer 5 with a thickness of 100~250nm.
Illustratively, the molar concentration of Al is less than or equal to 0.2 in n-type doping AlGaN sublayer 52.
Illustratively, the n-type doping of n-type doping AlGaN sublayer 52 is Si doping, and Si doping concentration is 1.5*1018cm-3
~3*1018cm-3。
Illustratively, multiple quantum well layer 6 can be the In in 5 to 15 periodsaGa1-aN (0 < a < 0.5) Quantum Well and GaN amount
Son builds the superlattice structure of alternating growth, InaGa1-aN Quantum Well with a thickness of 3nm or so, GaN quantum build with a thickness of 9~
20nm；Electronic barrier layer 7 is AlbGa1-bN (0.1 <b < 0.5) electronic barrier layer, with a thickness of 50~150nm；P-type GaN layer 8
Thickness can be 100~800nm；P-type contact layer 9 can be GaN or InGaN layer, and thickness can be 5~300nm.
Illustratively, in the LED epitaxial slice, GaN buffer layer 2 with a thickness of 15nm, the thickness of layer of undoped gan 3
Degree is 1 μm, n-type doping GaN layer 4 with a thickness of 1 μm, Si doping concentration is 10 in n-type doping GaN layer 418cm-3, AlN sublayer 51
With a thickness of 50nm, n-type doping AlGaN sublayer 52 with a thickness of 50nm, the molar concentration of Al in n-type doping AlGaN sublayer 52
It is 0.2, Si doping concentration is 1.5*10 in n-type doping AlGaN sublayer 5218cm-3, InaGa1-aN Quantum Well with a thickness of 3nm,
GaN quantum build with a thickness of 10nm, electronic barrier layer 7 with a thickness of 50nm, p-type GaN layer 8 with a thickness of 100nm, p-type contact
Layer 9 with a thickness of 100nm.
Illustratively, in the LED epitaxial slice, GaN buffer layer 2 with a thickness of 20nm, the thickness of layer of undoped gan 3
Degree is 1 μm, n-type doping GaN layer 4 with a thickness of 2 μm, Si doping concentration is 10 in n-type doping GaN layer 418cm-3, AlN sublayer 51
With a thickness of 60nm, n-type doping AlGaN sublayer 52 with a thickness of 50nm, the molar concentration of Al in n-type doping AlGaN sublayer 52
It is 0.2, Si doping concentration is 1.5*10 in n-type doping AlGaN sublayer 5218cm-3, InaGa1-aN Quantum Well with a thickness of 3nm,
GaN quantum build with a thickness of 11nm, electronic barrier layer 7 with a thickness of 60nm, p-type GaN layer 8 with a thickness of 150nm, p-type contact
Layer 9 with a thickness of 100nm.
Illustratively, in the LED epitaxial slice, GaN buffer layer 2 with a thickness of 25nm, the thickness of layer of undoped gan 3
Degree is 2 μm, n-type doping GaN layer 4 with a thickness of 3 μm, Si doping concentration is 0.5*10 in n-type doping GaN layer 419cm-3, AlN
Layer 51 with a thickness of 70nm, n-type doping AlGaN sublayer 52 with a thickness of 60nm, mole of Al in n-type doping AlGaN sublayer 52
Concentration is 0.2, and Si doping concentration is 1.5*10 in n-type doping AlGaN sublayer 5218cm-3, InaGa1-aN Quantum Well with a thickness of
3nm, GaN quantum build with a thickness of 10nm, electronic barrier layer 7 with a thickness of 70nm, p-type GaN layer 8 with a thickness of 200nm, p-type
Contact layer 9 with a thickness of 150nm.
Illustratively, in the LED epitaxial slice, GaN buffer layer 2 with a thickness of 30nm, the thickness of layer of undoped gan 3
Degree is 2 μm, n-type doping GaN layer 4 with a thickness of 4 μm, Si doping concentration is 0.5*10 in n-type doping GaN layer 419cm-3, AlN
Layer 51 with a thickness of 80nm, n-type doping AlGaN sublayer 52 with a thickness of 60nm, mole of Al in n-type doping AlGaN sublayer 52
Concentration is 0.2, and Si doping concentration is 2*10 in n-type doping AlGaN sublayer 5218cm-3, InaGa1-aN Quantum Well with a thickness of 3nm,
GaN quantum build with a thickness of 12nm, electronic barrier layer 7 with a thickness of 80nm, p-type GaN layer 8 with a thickness of 300nm, p-type contact
Layer 9 with a thickness of 150nm.
Illustratively, in the LED epitaxial slice, GaN buffer layer 2 with a thickness of 35nm, the thickness of layer of undoped gan 3
Degree is 3 μm, n-type doping GaN layer 4 with a thickness of 5 μm, Si doping concentration is 0.5*10 in n-type doping GaN layer 419cm-3, AlN
Layer 51 with a thickness of 90nm, n-type doping AlGaN sublayer 52 with a thickness of 70nm, mole of Al in n-type doping AlGaN sublayer 52
Concentration is 0.2, and Si doping concentration is 2*10 in n-type doping AlGaN sublayer 5218cm-3, InaGa1-aN Quantum Well with a thickness of 3nm,
GaN quantum build with a thickness of 13nm, electronic barrier layer 7 with a thickness of 90nm, p-type GaN layer 8 with a thickness of 400nm, p-type contact
Layer 9 with a thickness of 150nm.
Illustratively, in the LED epitaxial slice, GaN buffer layer 2 with a thickness of 15nm, the thickness of layer of undoped gan 3
Degree is 3 μm, n-type doping GaN layer 4 with a thickness of 1 μm, Si doping concentration is 0.5*10 in n-type doping GaN layer 419cm-3, AlN
Layer 51 with a thickness of 100nm, n-type doping AlGaN sublayer 52 with a thickness of 70nm, mole of Al in n-type doping AlGaN sublayer 52
Concentration is 0.1, and Si doping concentration is 2*10 in n-type doping AlGaN sublayer 5218cm-3, InaGa1-aN Quantum Well with a thickness of 3nm,
GaN quantum build with a thickness of 14nm, electronic barrier layer 7 with a thickness of 100nm, p-type GaN layer 8 with a thickness of 500nm, p-type contact
Layer 9 with a thickness of 200nm.
Illustratively, in the LED epitaxial slice, GaN buffer layer 2 with a thickness of 20nm, the thickness of layer of undoped gan 3
Degree is 4 μm, n-type doping GaN layer 4 with a thickness of 2 μm, Si doping concentration is 10 in n-type doping GaN layer 419cm-3, AlN sublayer 51
With a thickness of 110nm, n-type doping AlGaN sublayer 52 with a thickness of 80nm, the molar concentration of Al in n-type doping AlGaN sublayer 52
It is 0.1, Si doping concentration is 1.5*10 in n-type doping AlGaN sublayer 5218cm-3, InaGa1-aN Quantum Well with a thickness of 3nm,
GaN quantum build with a thickness of 15nm, electronic barrier layer 7 with a thickness of 110nm, p-type GaN layer 8 with a thickness of 600nm, p-type contact
Layer 9 with a thickness of 200nm.
Illustratively, in the LED epitaxial slice, GaN buffer layer 2 with a thickness of 25nm, the thickness of layer of undoped gan 3
Degree is 4 μm, n-type doping GaN layer 4 with a thickness of 3 μm, Si doping concentration is 10 in n-type doping GaN layer 419cm-3, AlN sublayer 51
With a thickness of 120nm, n-type doping AlGaN sublayer 52 with a thickness of 90nm, the molar concentration of Al in n-type doping AlGaN sublayer 52
It is 0.1, Si doping concentration is 2*10 in n-type doping AlGaN sublayer 5218cm-3, InaGa1-aN Quantum Well with a thickness of 3nm, GaN
Quantum build with a thickness of 16nm, electronic barrier layer 7 with a thickness of 120nm, p-type GaN layer 8 with a thickness of 700nm, p-type contact layer 9
With a thickness of 250nm.
Illustratively, in the LED epitaxial slice, GaN buffer layer 2 with a thickness of 30nm, the thickness of layer of undoped gan 3
Degree is 5 μm, n-type doping GaN layer 4 with a thickness of 4 μm, Si doping concentration is 10 in n-type doping GaN layer 419cm-3, AlN sublayer 51
With a thickness of 130nm, n-type doping AlGaN sublayer 52 with a thickness of 90nm, the molar concentration of Al in n-type doping AlGaN sublayer 52
It is 0.1, Si doping concentration is 3*10 in n-type doping AlGaN sublayer 5218cm-3, InaGa1-aN Quantum Well with a thickness of 3nm, GaN
Quantum build with a thickness of 17nm, electronic barrier layer 7 with a thickness of 130nm, p-type GaN layer 8 with a thickness of 800nm, p-type contact layer 9
With a thickness of 300nm.
Illustratively, in the LED epitaxial slice, GaN buffer layer 2 with a thickness of 35nm, the thickness of layer of undoped gan 3
Degree is 5 μm, n-type doping GaN layer 4 with a thickness of 5 μm, Si doping concentration is 10 in n-type doping GaN layer 418cm-3, AlN sublayer 51
With a thickness of 140nm, n-type doping AlGaN sublayer 52 with a thickness of 100nm, Al's is mole dense in n-type doping AlGaN sublayer 52
Degree is 0.1, and Si doping concentration is 3*10 in n-type doping AlGaN sublayer 5218cm-3, InaGa1-aN Quantum Well with a thickness of 3nm,
GaN quantum build with a thickness of 18nm, electronic barrier layer 7 with a thickness of 140nm, p-type GaN layer 8 with a thickness of 100nm, p-type contact
Layer 9 with a thickness of 300nm.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of GaN base light emitting epitaxial wafer, which is characterized in that the LED epitaxial slice includes: substrate, in institute
State the GaN buffer layer being sequentially deposited on substrate, layer of undoped gan, n-type doping GaN layer, defect barrier layer, multiple quantum well layer, electricity
Sub- barrier layer, p-type GaN layer and p-type contact layer, the defect barrier layer include AlN sublayer and n-type doping AlGaN sublayer,
The AlN sublayer is between the n-type doping GaN layer and the N-type AlGaN sublayer.
2. epitaxial wafer according to claim 1, which is characterized in that the AlN sublayer with a thickness of 50~150nm, the N
Type adulterate AlGaN sublayer with a thickness of 50~100nm.
3. epitaxial wafer according to claim 1, which is characterized in that the molar concentration of Al in the n-type doping AlGaN sublayer
Less than or equal to 0.2.
4. epitaxial wafer according to claim 3, which is characterized in that the n-type doping of the n-type doping AlGaN sublayer is Si
Doping, Si doping concentration are 1.5*1018cm-3~3*1018cm-3。
5. a kind of preparation method of GaN base light emitting epitaxial wafer, which is characterized in that the described method includes:
Substrate is provided；
It is sequentially deposited GaN buffer layer, layer of undoped gan, n-type doping GaN layer, defect barrier layer, Multiple-quantum over the substrate
Well layer, electronic barrier layer, p-type GaN layer and p-type contact layer, the defect barrier layer include AlN sublayer and n-type doping
AlGaN sublayer, the AlN sublayer is between the n-type doping GaN layer and the N-type AlGaN sublayer.
6. according to the method described in claim 5, it is characterized in that, the AlN sublayer with a thickness of 50~150nm, the N-type
Adulterate AlGaN sublayer with a thickness of 50~100nm.
7. according to the method described in claim 5, it is characterized in that, the molar concentration of Al is small in the n-type doping AlGaN sublayer
In or equal to 0.2.
8. the method according to the description of claim 7 is characterized in that the n-type doping of the n-type doping AlGaN sublayer is mixed for Si
Miscellaneous, Si doping concentration is 1.5*1018cm-3~3*1018cm-3。
9. according to the method described in claim 5, it is characterized in that, the growth temperature of the AlN sublayer be 1000~1300 DEG C,
The growth temperature of the n-type doping AlGaN sublayer is 800~1100 DEG C.
10. according to the method described in claim 9, it is characterized in that, the AlN sublayer and the n-type doping AlGaN sublayer
Growth pressure is 300~500Torr.
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| CN116130569A (en) * | 2023-04-17 | 2023-05-16 | 江西兆驰半导体有限公司 | High-efficiency light-emitting diode and preparation method thereof |
| CN116344684A (en) * | 2023-05-29 | 2023-06-27 | 江西兆驰半导体有限公司 | Light-emitting diode preparation method and diode |
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| CN103367581A (en) * | 2013-07-26 | 2013-10-23 | 东南大学 | Light emitting diode with electronic barrier layer structure |
| CN108091736A (en) * | 2017-10-20 | 2018-05-29 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and manufacturing method thereof |
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| CN103367581A (en) * | 2013-07-26 | 2013-10-23 | 东南大学 | Light emitting diode with electronic barrier layer structure |
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| CN116130569A (en) * | 2023-04-17 | 2023-05-16 | 江西兆驰半导体有限公司 | High-efficiency light-emitting diode and preparation method thereof |
| CN116344684A (en) * | 2023-05-29 | 2023-06-27 | 江西兆驰半导体有限公司 | Light-emitting diode preparation method and diode |
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