CN109786535B - Deep ultraviolet light-emitting device - Google Patents
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- CN109786535B CN109786535B CN201811543827.1A CN201811543827A CN109786535B CN 109786535 B CN109786535 B CN 109786535B CN 201811543827 A CN201811543827 A CN 201811543827A CN 109786535 B CN109786535 B CN 109786535B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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Abstract
The invention belongs to the technical field of special illumination, and particularly relates to a deep ultraviolet light-emitting device. A deep ultraviolet light-emitting device comprises a substrate, a deep ultraviolet LED chip and a lens; the surface of the substrate is provided with a groove and a clamping groove positioned around the top end of the groove, the deep ultraviolet LED chip is fixed in the groove through a first metal mixture, and the deep ultraviolet LED chip is electrically connected with the bottom surface of the groove through a gold thread; the lens covers the groove, and the peripheral edge of the lens is fixed in the clamping groove through a second metal mixture. The deep ultraviolet light-emitting device can effectively improve the light extraction efficiency of the device and can also prolong the service life of the device.
Description
Technical Field
The invention belongs to the technical field of special illumination, and particularly relates to a deep ultraviolet light-emitting device.
Background
A Light Emitting Diode (LED) is one of semiconductor diodes that can convert electrical energy into Light energy. Ultraviolet LEDs generally refer to LEDs having a central wavelength of light emission of 400nm or less (e.g., 10 to 400nm), but may be referred to as near-ultraviolet LEDs when the light emission wavelength is more than 380nm, and as deep-ultraviolet LEDs when the light emission wavelength is less than 300 nm. Since the ultraviolet LED has a high sterilizing effect with short wavelength light, it is often used for sterilization, deodorization, and other purposes of refrigerators, home appliances, and the like.
The current deep ultraviolet LED is prepared by packaging a deep ultraviolet LED chip, but the following problems are mainly existed: the extraction efficiency of ultraviolet light is low; the energy in the wavelength range is high, and the requirements on the packaging air tightness and packaging materials are high; the ultraviolet energy is higher, the heat is big, and the requirement on heat dispersion is high.
In particular, in the aspect of packaging, organic packaging and inorganic packaging are mostly adopted in the prior art, and because organic colloid is not resistant to UV (Ultraviolet) irradiation, the organic colloid is easy to yellow and is difficult to apply in the field of deep Ultraviolet LED packaging; the inorganic packaging technology is adopted, the high-temperature calcination matching packaging mode is adopted, the defect of adopting organic glue is avoided, the calcination condition is not easy to control, and high temperature can cause certain influence on LED packaging raw materials, so that the packaging and extracting efficiency is not high. In addition, because deep ultraviolet LED wavelength is short, and the energy is higher, long-time the use can cause the gold thread fracture, causes the dead lamp phenomenon (the condition that LED screen lamp pearl is not bright promptly).
Therefore, the prior art is in need of improvement.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, provides a deep ultraviolet light-emitting device and aims to solve the technical problem that the light extraction efficiency of the existing deep ultraviolet LED is not high.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a deep ultraviolet light-emitting device, which comprises a substrate, a deep ultraviolet LED chip and a lens, wherein the substrate is provided with a plurality of LED chips; the surface of the substrate is provided with a groove and a clamping groove positioned around the top end of the groove, the deep ultraviolet LED chip is fixed in the groove through a first metal mixture, and the deep ultraviolet LED chip is electrically connected with the bottom surface of the groove through a gold thread; the lens covers the groove, and the peripheral edge of the lens is fixed in the clamping groove through a second metal mixture.
The deep ultraviolet light-emitting device provided by the invention can be a surface-mounted light-emitting diode, a deep ultraviolet LED chip is fixed in a groove through a first metal mixture, the edge of a lens is fixed in a clamping groove through a second metal mixture, and the lens covers the top end of the groove; therefore, the first metal mixture is located between the ultraviolet LED chip and the groove, the second metal mixture is located between the lens and the clamping groove, the two metal mixtures are used as intermediates, the ultraviolet LED chip and the lens can be effectively welded and fixed respectively, seamless matching sealing of the lens and the surface of the substrate is achieved, accordingly, the sealing performance of the device is improved, yellowing of the packaging material is prevented, and further the light extraction efficiency and the stability of the device are improved; meanwhile, in the closed groove, the deep ultraviolet LED chip is electrically connected with the bottom surface of the groove through a gold thread, so that the stability is good, and the service life of the device can be prolonged.
Drawings
Fig. 1 is a schematic cross-sectional view of a deep ultraviolet light-emitting device according to embodiment 1 of the present invention;
fig. 2 is a schematic cross-sectional view of a deep ultraviolet light-emitting device in embodiment 2 of the present invention;
FIG. 3 is a schematic view of the connection of gold wire ball bonding process of the present invention;
FIG. 4 is a partially enlarged view of the structure of the slot of the present invention;
FIG. 5 is a partial enlarged view of the lens structure of the present invention;
wherein, in the figures, the respective reference numerals:
116-deep ultraviolet LED chip; 115-a substrate; 114-a groove; 113-gold ball bonding process connection; 112-gold wire; 111-a lens; 110-card slot; 121-first gold ball; 120-second gold ball;
226 a first quartz glass layer; 225-a third quartz glass layer; 224 a second quartz glass layer; 223-a second metal mixture; 222-a second light reflecting layer.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
Furthermore, the terms "first", "second", "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", "third" may explicitly or implicitly include one or more of the features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
The embodiment of the invention provides a deep ultraviolet light-emitting device, which comprises a substrate, a deep ultraviolet LED chip and a lens; the surface of the substrate is provided with a groove and a clamping groove positioned around the top end of the groove, the deep ultraviolet LED chip is fixed in the groove through a first metal mixture, and the deep ultraviolet LED chip is electrically connected with the bottom surface of the groove through a gold thread; the lens covers the groove, and the peripheral edge of the lens is fixed in the clamping groove through a second metal mixture.
The deep ultraviolet light-emitting device provided by the embodiment of the invention can be a patch type light-emitting diode, wherein a deep ultraviolet LED chip is fixed in a groove through a first metal mixture, the edge of a lens is fixed in a clamping groove through a second metal mixture, and the lens covers the top end of the groove; therefore, the first metal mixture is located between the ultraviolet LED chip and the groove, the second metal mixture is located between the lens and the clamping groove, the two metal mixtures are used as intermediates, the ultraviolet LED chip and the lens can be effectively welded and fixed respectively, seamless matching sealing of the lens and the surface of the substrate is achieved, accordingly, the sealing performance of the device is improved, yellowing of the packaging material is prevented, and further the light extraction efficiency and the stability of the device are improved; meanwhile, in the closed groove, the deep ultraviolet LED chip is electrically connected with the bottom surface of the groove through a gold thread, so that the stability is good, and the service life of the device can be prolonged.
Further, in the deep ultraviolet light emitting device of the embodiment of the present invention, the substrate is a ceramic substrate, preferably, the ceramic substrate is a boron nitride-doped aluminum nitride gold-clad substrate; in one embodiment of the invention, the doping content of boron nitride in the ceramic substrate is between 0.5 and 3 percent, the doping content is too low, the heat-conducting property is not obviously improved, the doping content is too high, the thermal expansion coefficient mismatch is large, and the stability of the substrate is poor. Further, the lens is a quartz glass lens, and for the specific shape of the lens, the lens is a square lens or a hemispherical lens.
Further, in the deep ultraviolet light emitting device of the embodiment of the invention, the wavelength of the deep ultraviolet LED chip is between 250 and 300 nm.
Further, in the deep ultraviolet light emitting device according to the embodiment of the present invention, the deep ultraviolet LED chip is connected (113) to the bottom surface of the groove by a gold wire ball bonding process of the gold wire, specifically, the bottom surface of the groove is provided with a first gold ball, a second metal is provided at a terminal of the gold wire close to the bottom surface of the groove, another terminal of the gold wire is connected to the deep ultraviolet LED chip, the first gold ball and the second gold ball are connected to each other, so that the deep ultraviolet LED chip is connected to the bottom surface of the groove by the gold wire, and the first gold ball, the second gold ball and the gold wire are made of gold. As shown in fig. 3, a detailed connection diagram of the gold wire ball bonding process connection (113) in fig. 1 or fig. 2 is shown, that is, the gold wire and the gold ball at the bottom of the groove are arranged in a hamburger type structure, the operation process includes arranging a first gold ball 121 on the surface of the bottom of the groove, connecting the gold wire 112 with the first gold ball 121, then arranging a second gold ball 120 on the upper portion of the connection of the gold wire 112, and connecting the first gold ball 121 and the second gold ball 120 to form the hamburger type structure.
Further, in the deep ultraviolet light emitting device of the embodiment of the present invention, the first metal mixture is a Se-doped Ag-Cu-Sn metal mixture. Specifically, the doping content of Se is 0.5% -1%, the content of Sn is 90% -95%, the content of Ag is 2% -4%, and the content of Cu is 1% -2%, wherein the total weight of the first metal mixture is 100%. The oxidation resistance of Se is strong, a small amount of Se is doped, the oxidation resistance in the device can be improved, the Ag-Cu-Sn metal mixture is preferably a submicron metal mixture, and the Se-doped submicron (1-10 microns) Ag-Cu-Sn metal mixture is used as a solid crystal material, so that the contact surface void ratio can be reduced, the thermal resistance can be further reduced, and the welding strength can be improved. Preferably, the second metal mixture is a Fe-Ni-Co metal mixture, wherein the content of Fe is 40%, the content of Ni is 30%, and the content of Co is 30%, based on 100% by weight of the second metal mixture. The thermal expansion coefficient of the second metal mixture is positioned between the quartz glass and the substrate, and the second metal mixture can be used as an intermediate to effectively weld the substrate metal and the quartz glass lens, so that the sealing property of the device is improved; in the embodiment of the invention, the lens is fixed in the clamping groove by the second metal mixture through a laser welding process, namely, the quartz glass lens and the substrate metal are sealed in a matched manner by adopting a laser rapid heating and cooling mode, and the laser rapid heating and cooling mode is adopted, so that the time cost is saved, the local welding of the clamping groove can be realized, the performance of other packaging materials is not influenced, and the sealing welding with high light extraction efficiency can be realized.
Preferably, in the laser welding process, a Nd-YAG laser (with the wavelength of 1.06um) is adopted for welding in local heating, the laser welding power is 5000-6000W, and the power density is 104-106W/cm2The heating time of welding is 10-20s, inert argon gas is adopted for protection in the welding process, the laser welding process is local heating, elements are not easy to generate heat damage, a heat affected zone is small, non-contact heating is adopted, the melting bandwidth is wide, no auxiliary tool is needed, the repeated operation can be realized, and the stability is good.
Further, in the deep ultraviolet light emitting device according to the embodiment of the present invention, a cavity of the groove is filled with helium gas. Because the deep ultraviolet LED has a short wavelength and is easy to react with oxygen in the air, in the preferred embodiment of the invention, the helium is filled in the groove, so that the ultraviolet rays are prevented from being oxidized, and the heat conductivity coefficient of the helium is high, so that the heat conductivity of the device can be effectively improved.
Further, as shown in fig. 4, the lens 111 is disposed in the card slot 110, and the second metal mixture 223 is filled between the lens 111 and the gap of the card slot 110 on the substrate. Preferably, the bottom of the lens 111 is provided with an extension part around, and the thickness of the extension part is between 5/6 and 9/10 of the height in the slot 110. The bottom surface of the card slot 110 is provided with a second reflective layer 222, so that the light extraction efficiency of ultraviolet light can be further improved. Further, in the deep ultraviolet light emitting device according to the embodiment of the invention, the bottom surface and the side wall of the groove are provided with the first reflective layer, so that ultraviolet light can be directed to the lens as much as possible.
Further, in the deep ultraviolet light emitting device according to the embodiment of the present invention, the lens includes a first quartz glass layer, a second quartz glass layer, and a third quartz glass layer sequentially disposed along a light emitting direction, and refractive indexes of the first quartz glass layer, the second quartz glass layer, and the third quartz glass layer sequentially increase. In order to further improve the light extraction efficiency of deep ultraviolet light, the lens in the embodiment of the present invention includes three quartz glass layers, the inner and outer transparent layers may be transparent layers, the thicknesses of the inner and outer transparent layers may be 1 to 5mm (i.e., a first quartz glass layer) and 0.5 to 1mm (i.e., a third quartz glass layer), respectively, a structural schematic diagram of the three quartz glass layers is shown in fig. 5, the lens includes a first quartz glass layer 226, a second quartz glass layer 224, and a third quartz glass layer 225, refractive indexes of the three quartz glass layers are sequentially increased, the three quartz glass layers are made of quartz glass, thermal expansion coefficients are similar, and only the material compositions are different. Through the lens consisting of the three quartz glass layers, the extraction efficiency of the deep ultraviolet light is obviously improved.
The invention is described in further detail with reference to a part of the test results, which are described in detail below with reference to specific examples.
Example 1
A deep ultraviolet light-emitting diode is shown in figure 1, and comprises a ceramic substrate (115), a first metal mixture, a second metal mixture, a deep ultraviolet LED chip (116), gold wires (112) and a quartz glass lens (111); the surface of the ceramic substrate (115) is provided with a groove (114) and a clamping groove (110) positioned around the top end of the groove (114).
The ceramic substrate (115) is an aluminum nitride gold-clad substrate, 2.5% of boron nitride is doped in the aluminum nitride, and a groove structure is arranged on the substrate; the deep ultraviolet LED chip (116) is fixed on the bottom of a groove (114) of a ceramic substrate through a first metal mixture Sn-Ag-Cu mixture (wherein the Se doping content is 0.8%, the Sn content is 94%, the Ag content is 3.5%, and the Cu content is 1.7%), and is electrically connected with the bottom of the groove through a gold wire (112), wherein a gold wire ball welding process connection (113) is arranged at the connection position of the gold wire and the bottom of the groove (as shown in figure 3, a first gold ball 121 and a second gold ball 120 are connected with each other to form a hamburger type structure); the quartz glass lens (111) is fixed in the clamping groove (110) through a second metal mixture Fe-Ni-Co metal mixture (wherein the weight percentages of Fe, Ni and Co are respectively 40%, 30% and 30%); in addition, helium is filled in the groove; the quartz glass lens (111) is a square lens, and three layers of quartz glass materials with different refractive indexes are arranged along the light emitting direction of the lens. The performance parameters of the uv led are shown in table 1.
Example 2
A deep ultraviolet light-emitting diode is shown in figure 2, and comprises a ceramic substrate (115), a first metal mixture, a second metal mixture, a deep ultraviolet LED chip (116), gold wires (112) and a quartz glass lens (111); the surface of the ceramic substrate (115) is provided with a groove (114) and a clamping groove (110) positioned around the top end of the groove (114).
The ceramic substrate (115) is an aluminum nitride gold-clad substrate, 2.5% of boron nitride is doped in the aluminum nitride, and a groove structure is arranged on the substrate; the deep ultraviolet LED chip (116) is fixed on the bottom of a groove (114) of a ceramic substrate through a first metal mixture Sn-Ag-Cu mixture (wherein the Se doping content is 0.8%, the Sn content is 94%, the Ag content is 3.5%, and the Cu content is 1.7%), and is electrically connected with the bottom of the groove through a gold wire (112), wherein a gold wire ball welding process connection (113) is arranged at the connection position of the gold wire and the bottom of the groove (as shown in figure 3, a first gold ball 121 and a second gold ball 120 are connected with each other to form a hamburger type structure); the quartz glass lens (111) is fixed in the clamping groove through a second metal mixture Fe-Ni-Co metal mixture (wherein the weight percentages of Fe, Ni and Co are respectively 40%, 30% and 30%) in a laser rapid heating and cooling mode; helium is filled in the groove; the quartz glass lens (111) is a spherical lens, and three layers of quartz glass materials with different refractive indexes are arranged along the light emitting direction of the lens. The performance parameters of the uv led are shown in table 1.
Example 3
A deep ultraviolet light-emitting diode is shown in figure 2, and comprises a ceramic substrate (115), a first metal mixture, a second metal mixture, a deep ultraviolet LED chip (116), gold wires (112) and a quartz glass lens (111); the surface of the ceramic substrate (115) is provided with a groove (114) and a clamping groove (110) positioned around the top end of the groove (114).
The ceramic substrate (115) is an aluminum nitride gold-clad substrate, 2.5% of boron nitride is doped in the aluminum nitride, and a groove structure is arranged on the substrate; the deep ultraviolet LED chip is fixed on the bottom surface of a groove (114) of the ceramic substrate through a first metal mixture Sn-Ag-Cu mixture (Sn accounts for 94% by weight, Ag accounts for 3.5% by weight, Cu accounts for 2.5% by weight and is not doped with Se), and is electrically connected through a gold wire, wherein a gold ball is arranged at the joint of the gold wire and the substrate; the quartz glass lens (111) is filled in the clamping groove (110) through a second metal mixture Fe-Ni-Co metal mixture (wherein the weight percentages of Fe, Ni and Co are respectively 40%, 30% and 30%), and the quartz glass lens is fixed in the clamping groove through laser rapid heating and cooling; helium is filled in the groove; the quartz lens is a spherical lens, and three layers of materials with different refractive indexes are arranged on the lens along the light emitting direction. The performance parameters of the uv led are shown in table 1.
Example 4
A deep ultraviolet light-emitting diode is shown in figure 2, and comprises a ceramic substrate (115), a first metal mixture, a second metal mixture, a deep ultraviolet LED chip (116), gold wires (112) and a quartz glass lens (111); the surface of the ceramic substrate (115) is provided with a groove (114) and a clamping groove (110) positioned around the top end of the groove (114).
The ceramic substrate (115) is an aluminum nitride gold-clad substrate, 2.5% of boron nitride is doped in the aluminum nitride, and a groove structure is arranged on the substrate; the deep ultraviolet LED chip is fixed on the bottom surface of a groove (114) of the ceramic substrate through a first metal mixture Sn-Ag-Cu mixture (wherein the Se doping content is 0.8%, the Sn accounts for 94%, the Ag accounts for 3.5%, and the Cu accounts for 1.7%), and is electrically connected through a gold wire, wherein a gold ball is arranged at the connection position of the gold wire and the substrate; the quartz glass lens (111) is filled in the clamping groove (110) through a second metal mixture Fe-Ni-Co metal mixture (wherein the weight percentages of Fe, Ni and Co are respectively 40%, 30% and 30%), and the quartz glass lens is fixed in the clamping groove in a high-temperature furnace heating and cooling mode; in addition, helium is filled in the groove; the quartz lens is a spherical lens, and three layers of materials with different refractive indexes are arranged on the lens. The performance parameters of the uv led are shown in table 1.
Comparative example
A deep ultraviolet light-emitting diode comprises a ceramic substrate (115), a first metal mixture, organic silica gel, a deep ultraviolet LED chip (116), gold wires (112) and a quartz glass lens (111); the surface of the ceramic substrate (115) is provided with a groove (114) and a clamping groove (110) positioned around the top end of the groove (114).
The ceramic substrate (115) is an aluminum nitride gold-clad substrate, 2.5% of boron nitride is doped in the aluminum nitride, and a groove structure is arranged on the surface of the ceramic substrate (115); the deep ultraviolet LED chip (116) is fixed on the bottom surface of a groove (114) of the ceramic substrate through a first metal mixture Sn-Ag-Cu mixture (wherein Sn accounts for 94% by weight, Ag accounts for 3.5% by weight, and Cu accounts for 2.5% by weight), and is electrically connected through a gold wire, and a gold ball is arranged at the connection position of the gold wire and the groove of the substrate; the quartz glass lens (111) is filled and fixed in the clamping groove (110) through organic silica gel; in addition, the inside of the groove (114) is filled with helium gas; the quartz glass lens is a spherical lens (111). The performance parameters of the uv led are shown in table 1.
Analysis of performance parameters
The performance parameters of the deep ultraviolet light emitting diodes of the above examples and comparative examples are shown in the following table.
TABLE 1
| Name (R) | Relative light extraction efficiency (%) | Reliability of |
| Example 1 | 128 | Superior food |
| Example 2 | 130 | Superior food |
| Example 3 | 129 | Good wine |
| Example 4 | 100 | Good wine |
| Comparative example | 95 | Difference (D) |
Note: the reliability test mainly adopts appearance detection and photoelectric performance detection after aging for 1000 hours under the conditions of 85 ℃ of temperature and 85% of relative humidity for comparison, and the reliability is divided into three grades of excellent, good and poor according to the comparison result.
As can be seen from the data of the examples and the comparative examples in table 1, the deep ultraviolet light emitting diode of the embodiment of the present invention is connected by the hamburger type gold wire ball bonding process, so that the reliability of the device is better, and the laser rapid heating and cooling sealing method using the inorganic Fe-Co-Ni metal mixture has significant advantages over the relative light extraction efficiency and reliability of the organic glue sealing device; compared with the traditional method of heating and cooling by using a high-temperature furnace, the method of local laser sealing has obvious advantages in light extraction efficiency and reliability.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (8)
1. A deep ultraviolet light-emitting device is characterized in that the deep ultraviolet light-emitting device is a surface mount type deep ultraviolet light-emitting device and comprises a substrate, a deep ultraviolet LED chip and a lens; the surface of the substrate is provided with a groove and a clamping groove positioned around the top end of the groove, the deep ultraviolet LED chip is fixed in the groove through a first metal mixture, and the deep ultraviolet LED chip is electrically connected with the bottom surface of the groove through a gold thread; the lens covers the groove, and the peripheral edge of the lens is fixed in the clamping groove through a second metal mixture; wherein,
the first metal mixture is a Se-doped Ag-Cu-Sn metal mixture, wherein the Se doping content is 0.5% -1%, the Sn content is 90% -95%, the Ag content is 2% -4%, and the Cu content is 1% -2% based on the total weight of the first metal mixture as 100%; the second metal mixture is Fe-Ni-Co metal mixture, and the total weight of the second metal mixture is 100%, wherein the content of Fe is 40%, the content of Ni is 30%, and the content of Co is 30%.
2. The deep ultraviolet light emitting device of claim 1, wherein the deep ultraviolet LED chip wavelength is between 250-300 nm.
3. The deep ultraviolet light emitting device of claim 1, wherein the deep ultraviolet LED chip is connected to the bottom surface of the groove by gold wire ball bonding process of the gold wire.
4. The deep ultraviolet light emitting device of claim 1, wherein the second metal compound secures the lens within the pocket by a laser welding process.
5. The deep ultraviolet light emitting device of claim 1, wherein the substrate is a boron nitride doped aluminum nitride gold-clad substrate; and/or
The lens is a quartz glass lens; and/or
The lens is a square lens or a hemispherical lens.
6. The deep ultraviolet light emitting device of claim 1, wherein a cavity of the groove is filled with helium gas.
7. The deep ultraviolet light emitting device of any one of claims 1 to 6, wherein the lens comprises a first quartz glass layer, a second quartz glass layer and a third quartz glass layer arranged in sequence along the light emitting direction, and the refractive index of the first quartz glass layer, the refractive index of the second quartz glass layer and the refractive index of the third quartz glass layer are increased in sequence.
8. The deep ultraviolet light emitting apparatus of any one of claims 1 to 6, wherein bottom surfaces and side walls of the grooves are provided with a first reflective layer; and/or
And a second reflecting layer is arranged on the bottom surface of the clamping groove.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811543827.1A CN109786535B (en) | 2018-12-17 | 2018-12-17 | Deep ultraviolet light-emitting device |
| PCT/CN2019/084591 WO2020015425A1 (en) | 2018-12-17 | 2019-04-26 | Deep ultraviolet light-emitting apparatus |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811543827.1A CN109786535B (en) | 2018-12-17 | 2018-12-17 | Deep ultraviolet light-emitting device |
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| CN109786535A CN109786535A (en) | 2019-05-21 |
| CN109786535B true CN109786535B (en) | 2020-06-26 |
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| CN112038463A (en) * | 2019-06-04 | 2020-12-04 | 佛山市国星光电股份有限公司 | Ultraviolet LED device and preparation method thereof |
| CN110707199B (en) * | 2019-10-16 | 2024-03-26 | 五邑大学 | Deep ultraviolet LED device and packaging method thereof |
| CN111720797B (en) * | 2020-07-27 | 2023-11-17 | 桂林海威科技股份有限公司 | Lens for secondary light distribution and patch welding method thereof |
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| CN102339929A (en) * | 2010-07-29 | 2012-02-01 | 富士迈半导体精密工业（上海）有限公司 | Method for manufacturing LED (Light-Emitting Diode) light-emitting component |
| KR101850432B1 (en) * | 2011-07-11 | 2018-04-19 | 엘지이노텍 주식회사 | Light emitting moudule |
| CN103137833A (en) * | 2013-03-15 | 2013-06-05 | 深圳市瑞丰光电子股份有限公司 | Method and structure of light emitting diode (LED) packaging |
| CN204011471U (en) * | 2014-07-17 | 2014-12-10 | 陕西光电科技有限公司 | A kind of deep ultraviolet LED device encapsulation structure |
| CN105428472A (en) * | 2015-11-18 | 2016-03-23 | 佛山市南海区联合广东新光源产业创新中心 | Manufacturing method for ultraviolet LED device |
| CN106784243B (en) * | 2016-12-27 | 2019-07-19 | 广东晶科电子股份有限公司 | A kind of deep ultraviolet LED packaging and preparation method thereof |
| CN107833946A (en) * | 2017-11-28 | 2018-03-23 | 西安科锐盛创新科技有限公司 | A kind of LED encapsulation method |
| CN207781640U (en) * | 2018-01-26 | 2018-08-28 | 深圳市源磊科技有限公司 | A kind of ultraviolet LED encapsulating structure and ultraviolet LED lamp |
| CN108123023A (en) * | 2018-01-30 | 2018-06-05 | 易美芯光（北京）科技有限公司 | A kind of deep ultraviolet LED encapsulation structure and preparation method thereof |
| CN108417702B (en) * | 2018-02-01 | 2020-02-04 | 浙江大明光电科技有限公司 | Deep ultraviolet LED packaging structure with heat dissipation function |
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| WO2020015425A1 (en) | 2020-01-23 |
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