CN109786499A - Semiconductor, X-ray detector and display device - Google Patents
Semiconductor, X-ray detector and display device Download PDFInfo
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- CN109786499A CN109786499A CN201910031218.6A CN201910031218A CN109786499A CN 109786499 A CN109786499 A CN 109786499A CN 201910031218 A CN201910031218 A CN 201910031218A CN 109786499 A CN109786499 A CN 109786499A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 74
- 238000006243 chemical reaction Methods 0.000 claims abstract description 66
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 34
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000002245 particle Substances 0.000 claims abstract description 24
- 239000010410 layer Substances 0.000 claims description 110
- 239000010409 thin film Substances 0.000 claims description 46
- 239000010408 film Substances 0.000 claims description 14
- 239000011241 protective layer Substances 0.000 claims description 13
- 238000003384 imaging method Methods 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 claims description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 8
- 239000011148 porous material Substances 0.000 abstract description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000005622 photoelectricity Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910002616 GeOx Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910020750 SixGey Inorganic materials 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 229910005823 GeOy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 210000003205 muscle Anatomy 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention provides a semiconductor, an X-ray detector and a display device, wherein the semiconductor comprises: the photoelectric conversion layer has a uniform porous structure, and germanium particles are filled in pores of the photoelectric conversion layer; and the transparent conductive film is positioned on the light incident side of the photoelectric conversion layer. According to the invention, germanium particles are filled in the uniform porous structure and are used as the light conversion layer of the semiconductor, so that the semiconductor can stably absorb long light waves and convert longer wavelength light wave information, and the limitation that the semiconductor can only convert short wave light optical signals into electric signals is broken through.
Description
Technical field
The present invention relates to detector field, in particular to a kind of semiconductor, X-ray detector and display equipment.
Background technique
X-ray detector is widely used in Medical Instruments, e.g., carries out Chest X-rays imaging using X-ray；In the prior art
In, the photoelectric converting function of X-ray detector is mainly completed by amorphous silicon photodiodes, and X-ray is (main at present through scintillator
It is converted into visible light for CsI), then will be seen that light is converted into electric signal and by thin film transistor (TFT) through amorphous silicon photodiodes
(Thin film transistor, abbreviation TFT) exports electric signal.
Since the structure of amorphous silicon is not sufficiently stable, the shorter light of main absorbing wavelength, such as blue-green, and can not absorb
The light of more long wavelength, such as feux rouges-green light, using show amorphous silicon as the photodiode of light conversion layer can not Wavelength-converting it is longer
Light-wave information, therefore the function limitation of X-ray detector.
Summary of the invention
The main object of the present invention is to provide a kind of semiconductor, it is intended to which solving amorphous silicon photodiodes can not absorbing wavelength
The problem of longer light wave.
To achieve the above object, the present invention proposes that a kind of semiconductor, the semiconductor include: photoelectric conversion layer, the light
Electric conversion layer has uniform porous structure, and germanium particle is filled in hole；Transparent conductive film is located at the photoelectric conversion layer
Incident side.
Optionally, the germanium particle is nanometer germanium.
Optionally, the porous structure is by germanium oxide, germanium nitride, the oxide comprising germanium and silicon and comprising germanium and silicon
One of nitride or a variety of formation.
Optionally, the semiconductor further includes P doped layer and N doped layer；The P doped layer is located at the photoelectric conversion layer
Incident side and between the transparent conductive film and the photoelectric conversion layer, the N doped layer is located at the photoelectricity turn
Change the light emission side of layer.
Optionally, the semiconductor further includes dielectric, and the P doped layer and N doped layer are wrapped in the insulation and are situated between
In matter, so that P doped layer and N doped layer insulate.
The present invention also proposes a kind of X-ray detector, including semiconductor described in any of the above embodiments, the X-ray detection
Device further include: scintillator, positioned at the X-ray detector incident side and X-ray is converted into visible light, the semiconductor pair
The visible light carries out photoelectric conversion；Thin film transistor (TFT), the thin film transistor (TFT) are connect with the semi-conductor electricity；Shading piece, position
It is between the scintillator and thin film transistor (TFT) and corresponding with the position of the thin film transistor active layer, it is described active to block
The incident light of layer.
Optionally, the semiconductor and shading piece are arranged side by side between scintillator and the thin film transistor (TFT).
Optionally, the semiconductor and the shading piece are stacked vertically between the scintillator and thin film transistor (TFT), and
The semiconductor is located at the incident side of the shading piece.
Optionally, the X-ray detector further include: protective layer, the protective layer be filled in the thin film transistor (TFT) with
The shading piece, photosensitive layer and thin film transistor (TFT) are isolated with external environment in gap between the scintillator.
The present invention also proposes a kind of display equipment, including X-ray detector described in any of the above embodiments, the display equipment
It further include imaging device, the imaging device is electrically connected with the thin film transistor (TFT).
Technical solution of the present invention is by being changed to the photoelectric conversion layer for playing photoelectric conversion in semiconductor filled with germanium
The porous structure of particle, and transparent conductive film is set in the incident side of photoelectric conversion layer, relative to silicon, germanium is to can absorb wave
Long longer light wave, germanium is particles filled in uniform porous structure, and the light conversion layer as semiconductor, so that semiconductor energy
It is enough steadily to absorb long light wave, can the longer light-wave information of Wavelength-converting, the light of short wavelength light can only be believed by breaching semiconductor
Number it is converted into the limitation of electric signal.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
The structure shown according to these attached drawings obtains other attached drawings.
Fig. 1 is a kind of structural schematic diagram of one embodiment of semiconductor of the present invention；
Fig. 2 is the structural schematic diagram of an embodiment of X-ray detector of the present invention；
Fig. 3 is another example structure schematic diagram of X-ray detector of the present invention.
Drawing reference numeral explanation:
| Label | Title | Label | Title |
| 10 | Scintillator | 62 | N doped layer |
| 20 | Protective layer | 70 | Active layer |
| 30 | Shading piece | 80 | Semiconductor |
| 40 | Transparent conductive film | 90 | Signal reader |
| 50 | Drain electrode | 91 | GeOy |
| 60 | Photoelectric conversion layer | 92 | Germanium particle |
| 61 | P doped layer |
The embodiments will be further described with reference to the accompanying drawings for the realization, the function and the advantages of the object of the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiment is only a part of the embodiments of the present invention, instead of all the embodiments.Base
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts it is all its
His embodiment, shall fall within the protection scope of the present invention.
It is to be appreciated that the directional instruction (such as up, down, left, right, before and after ...) of institute is only used in the embodiment of the present invention
In explaining in relative positional relationship, the motion conditions etc. under a certain particular pose (as shown in the picture) between each component, if should
When particular pose changes, then directionality instruction also correspondingly changes correspondingly.
In addition, the description for being related to " first ", " second " etc. in the present invention is used for description purposes only, and should not be understood as referring to
Show or imply its relative importance or implicitly indicates the quantity of indicated technical characteristic." first ", " are defined as a result,
Two " feature can explicitly or implicitly include at least one of the features.In addition, the technical solution between each embodiment can
It to be combined with each other, but must be based on can be realized by those of ordinary skill in the art, when the combination of technical solution occurs
Conflicting or cannot achieve when, will be understood that the combination of this technical solution is not present, also not the present invention claims protection model
Within enclosing.
Please with reference to Fig. 1-3, the invention proposes a kind of semiconductor 80, the semiconductor 80 includes: photoelectric conversion layer
60, there is uniform porous structure, and germanium particle 92 is filled in hole；Transparent conductive film 40 is located at the photoelectric conversion layer
60 incident side.
In the present embodiment, photoelectric conversion layer 60 is formed by the even porous structure filled with germanium particle 92, described uniform
Porous structure by GeOx、GeNx、SixGeyOzOr SixGeyNzOne of or a variety of formation, Fig. 3 be germanium particle 92 be filled in
GeOxIn 91 pore structures formed.In the even porous structure film forming filled with germanium particle 92, pass through different interfacial activities
Agent carrys out the size of control hole, thus the size for the germanium particle 92 that control is filled in hole；Due to fixed-size germanium particle 92
The light that specific wavelength can be absorbed, enables steadily light of the absorbing wavelength in particular range of photoelectric conversion layer 60, and uniform
Pore structure to fill germanium particle 92 in the inner uniform in size, therefore to the Vapor recovery unit of optical wavelength, photoelectric conversion is also more
Add sensitive.
Wherein, transparent conductive film 40 is electrically connected with photoelectric conversion layer 60, and transparent conductive film 40 is for applying voltage, light
Photoelectric conversion layer 60 is injected from transparent conductive film 40, optical signal is converted the electrical signal to by photoelectric conversion layer 60.
Compared to silicon, germanium to can the longer light wave of absorbing wavelength, and, germanium itself is higher than silicon to the sensibility of light, has
Germanium particle 92 is filled in uniform porous structure, and the photoelectric conversion as semiconductor 80 by more efficient photoelectric conversion performance
Layer 60, enables semiconductor 80 steadily to absorb long light wave, compared to the semiconductor using amorphous silicon as photoelectric conversion layer 60
80, can the longer light-wave information of Wavelength-converting, do not limited by short wavelength light, e.g., feux rouges-green light, and using amorphous silicon as light
Mainly conversion is in the light wave in blue-green to the semiconductor 80 of electric conversion layer 60.Also, germanium particle 92 is filled in uniformly
Porous structure, and as the photoelectric conversion layer of semiconductor 80 60, there is higher photoelectric conversion performance, it can be quickly by optical signal
It is converted into electric signal, is reacted more sensitive.
Therefore, when the present embodiment being applied to X-ray detector, X-ray detector has more sensitive photoelectric conversion
Performance, and photoelectric conversion efficiency is also superior to the X-ray detector for carrying out photoelectric conversion using amorphous silicon diode, and not by short
The limitation of the glistening light of waves, application are more extensive.
As one embodiment, the germanium particle 92 is nanometer germanium.The size of germanium particle 92 determines by the size in hole, Kong Yue
Greatly, the germanium particle 92 being filled in hole is bigger, and the light wave of absorption is longer.Uniform pore structure to fill germanium particle in the inner
92 is uniform in size, therefore to the Vapor recovery unit of optical wavelength, photoelectric conversion is also sensitiveer.
The semiconductor 80 further includes P doped layer 61 and N doped layer 62；The P doped layer 61 is located at the photoelectric conversion
The incident side of layer 60 and between the transparent conductive film 40 and the photoelectric conversion layer 60, the N doped layer 62 is located at
The light emission side of the photoelectric conversion layer 60.The semiconductor 80 further includes dielectric, the P doped layer 61 and N doped layer 62
It is wrapped in the dielectric, so that P doped layer 61 and N doped layer 62 insulate.
When semiconductor 80 is connect with signal reader 90,62 shape of P doped layer 61, photoelectric conversion layer 60 and N doped layer
At structure its effect be similar to capacitor, prevent 60 photoelectric effect of photoelectric conversion layer generate electric signal be lost so that the electricity
Signal can farthest flow to signal reader 90.In the present embodiment, the signal reader 90 is that film is brilliant
The electric signal of reading is sent to external picture reproducer by the array substrate of body pipe (not indicating in figure) composition, array substrate, is completed
The output of electric signal.
P doped layer 61 and N doped layer 62 are powered during manufacture in order to prevent, and production is caused to fail, described partly to lead
Body 80 further includes the dielectric for wrapping the P doped layer 61 and N doped layer 62, so that the P doped layer 61 and N doped layer 62
Insulation.
The present invention also proposes that a kind of X-ray detector, including semiconductor 80 any one of as described above, the X-ray are visited
Survey device further include scintillator 10, positioned at the X-ray detector incident side and X-ray is converted into visible light, it is described partly to lead
Body 80 carries out photoelectric conversion to the visible light；Thin film transistor (TFT), the thin film transistor (TFT) are electrically connected with the semiconductor 80；It hides
Light part 30, it is between the scintillator 10 and thin film transistor (TFT) and corresponding with the position of the thin film transistor active layer 70,
To block the incident light of the active layer 70.
In the present embodiment, the main ingredient of scintillator 10 is CsI, and X-ray enters flashing from the incident side of scintillator 10
Body 10 is converted to visible light by scintillator 10, and for semiconductor 80 after the visible light exposure, photoelectric conversion layer 60 generates photoelectricity effect
It answers, converts optical signals to electric signal, since semiconductor 80 is electrically connected with the drain electrode 50 of thin film transistor (TFT), the electric signal is through thin
Film transistor output, realizes the photoelectric converting function of X-ray detector.Due to having one can believe light in thin film transistor (TFT)
It number is converted into the active layer 70 of electric signal, if there is visible light to enter thin film transistor (TFT), will lead to the electricity transmitted in thin film transistor (TFT)
Signal changes, and therefore, visible light enters thin film transistor (TFT) in order to prevent, and the incident side of thin film transistor (TFT) is provided with shading
Part 30, shading piece 30 block the light of directive thin film transistor active layer 70, so that thin film transistor (TFT) is only transmitted from photoelectricity
The electric signal of conversion layer 60 completes the signal-obtaining function to semiconductor 80.
There are two types of the position tools of semiconductor 80 is arranged form, the first are as follows: the semiconductor 80 hangs down with the shading piece 30
It is directly stacked between the scintillator 10 and thin film transistor (TFT), and the semiconductor 80 is located at the incident side of the shading piece 30；
Second are as follows: semiconductor 80 and shading piece 30 are arranged side by side between scintillator 10 and the thin film transistor (TFT).
As shown in Fig. 2, when semiconductor 80 is between scintillator 10 and shading piece 30, semiconductor 80 and thin film transistor (TFT)
It is electrically connected between drain electrode 50 by conducting wire, the electric signal that photoelectric conversion layer 60 generates is read by thin film transistor (TFT).This set
Form enables semiconductor 80 to receive radiation of visible light in large area, is not limited by thin film transistor (TFT), has very high light
Photoelectric transformation efficiency.When X-ray detector is applied to display equipment, semiconductor 80 is between scintillator 10 and shading piece 30
Setting form can reduce the exposure intensity of irradiation time or reduction X-ray of the patient under X-ray, due to X-ray detector
With very high photoelectric conversion efficiency, same imaging effect can achieve, therefore reduce influence of the X-ray to patient.
As shown in figure 3, second of setting form of semiconductor 80: that is, semiconductor 80 and shading piece 30 are arranged side by side in sudden strain of a muscle
Between bright body 10 and the thin film transistor (TFT)；At this point, photoelectric conversion layer 60 penetrate the insulating protective layer of thin film transistor (TFT) with it is described
The drain electrode 50 of thin film transistor (TFT) is electrically connected, and since photoelectric conversion layer 60 is directly contacted with the drain electrode 50 of thin film transistor (TFT), photoelectricity turns
The electric signal for changing the generation of 60 photoelectric effect of layer directly can enter thin film transistor (TFT) from drain electrode 50, and therefore, photoelectric conversion layer 60 can
To be separately provided, P doped layer 61 and N doped layer 62 are not needed.In actual production, the production of P doped layer 61 and N doped layer 62
Process is complicated, and expensive, semiconductor 80 and shading piece 30 are arranged side by side between scintillator 10 and the thin film transistor (TFT)
Form can directly save P doped layer 61 and N doped layer 62, greatly reduce the production cost of X-ray detector, simplify work
Skill process.
In the above two setting form of semiconductor 80, photoelectric conversion layer 60 can not need P doped layer 61 and N is adulterated
Layer 62, it is independent to form semiconductor 80 with transparent conductive film 40；It can also include P doped layer 61 and the common shape of N doped layer 62
At semiconductor 80, photoelectric conversion is carried out to the visible light from scintillator 10.In actual production, P doped layer 61 and N doped layer
62 production process is complicated, expensive, and the form for directly saving P doped layer 61 and N doped layer 62 greatly reduces X-ray spy
The production cost for surveying device, simplifies process flow.
The semiconductor 80 formed using the even porous structure filled with germanium particle 92 is as the semiconductor of photoelectric conversion layer
80 have more sensitive photoelectric conversion performance, and photoelectric conversion efficiency is higher, and therefore, the present embodiment is visited applied to X-ray
When surveying device, X-ray detector has more sensitive photoelectric conversion performance, and photoelectric conversion efficiency is also superior to utilization amorphous silicon two
The X-ray detector of pole pipe progress photoelectric conversion.
Optionally, the X-ray detector further include: protective layer 20, the protective layer 20 are filled in the signal-obtaining
Gap between device 90 and the scintillator 10, by the shading piece 30, photosensitive layer 80 and signal reader 90 and the external world
It is environmentally isolated.
Electric signal is lost in order to prevent, and each element of X-ray detector needs strictly to completely cut off with external environment, therefore,
The X-ray detector further includes protective layer 20, and the protective layer 20 is filled in the signal reader 90 and the flashing
The shading piece 30, photosensitive layer 80 and array substrate are isolated with external environment in gap between body 10.
In one embodiment, the protective layer 20 and the insulating layer can be same substance, such as SiNx, can also be difference
Substance, if insulating layer is SiNx, and protective layer 20 is SiOx, insulating layer is provided separately with protective layer 20 at this time.
It should be understood that include the semiconductor 80 of photoelectric conversion layer 60, P doped layer 61 and N doped layer 62, it also can be with screening
Light part 30 is arranged side by side between scintillator 10 and thin film transistor (TFT), at this point, semiconductor 80 and thin film transistor (TFT) pass through conducting wire electricity
Connection.
Since the semiconductor 80 of the X-ray detector has the photoelectric conversion layer 60 comprising germanium particle 92, the X-ray
Detector can be used for the longer lightwave signal of Wavelength-converting, compared to the X for realizing photoelectric converting function with amorphous silicon semiconductor
Ray detector can have the function that the optical signal of long wave is converted to electric signal.
The present invention also proposes a kind of display equipment, which includes aforementioned X-ray detector and imaging device, described
X-ray detector is electrically connected with imaging device, and X-ray detector forms shadow because of the imaged device of electric signal that photoelectric effect generates
Picture.
In the present embodiment, due to playing the semiconductor of photoelectric converting function in X-ray detector with sensitive and efficient
Photoelectric conversion performance, and it is able to achieve the function that the optical signal of long wave is converted to electric signal, therefore, in same imaging effect
Under, the exposure intensity or irradiation time of X-ray can be reduced, reduces the influence to patient, and the limitation of short wavelength light can be broken through.
The foregoing is merely alternative embodiments of the invention, are not intended to limit the scope of the invention, all at this
Under the design of invention, using equivalent structure transformation made by description of the invention and accompanying drawing content, or directly/it is used in it indirectly
He is included in scope of patent protection of the invention relevant technical field.
Claims (10)
1. a kind of semiconductor, which is characterized in that the semiconductor includes:
Photoelectric conversion layer, the photoelectric conversion layer have uniform porous structure, and germanium particle is filled in hole；
Transparent conductive film, positioned at the incident side of the photoelectric conversion layer.
2. semiconductor according to claim 1, which is characterized in that the germanium particle is nanometer germanium.
3. semiconductor according to claim 1, which is characterized in that the porous structure by germanium oxide, germanium nitride, include germanium
One of nitride with the oxide of silicon and comprising germanium and silicon or a variety of formation.
4. semiconductor according to claim 1, which is characterized in that the semiconductor further includes P doped layer and N doped layer；
The P doped layer be located at the incident side of the photoelectric conversion layer and in the transparent conductive film and the photoelectric conversion layer it
Between, the N doped layer is located at the light emission side of the photoelectric conversion layer.
5. semiconductor according to claim 4, which is characterized in that the semiconductor further includes dielectric, the P doping
Layer is wrapped in the dielectric with N doped layer, so that P doped layer and N doped layer insulate.
6. a kind of X-ray detector, which is characterized in that including semiconductor as described in any one in claim 1-5, the X is penetrated
Line detector further include: scintillator, positioned at the X-ray detector incident side and X-ray is converted into visible light, described half
Conductor carries out photoelectric conversion to the visible light；
Thin film transistor (TFT), the thin film transistor (TFT) are connect with the semi-conductor electricity；
Shading piece, it is between the scintillator and thin film transistor (TFT) and corresponding with the position of the thin film transistor active layer,
To block the incident light of the active layer.
7. X-ray detector according to claim 6, which is characterized in that the semiconductor and shading piece be arranged side by side in
Between scintillator and the thin film transistor (TFT).
8. X-ray detector according to claim 6, which is characterized in that the semiconductor and the shading piece vertical stacks
It is laminated between the scintillator and thin film transistor (TFT), and the semiconductor is located at the incident side of the shading piece.
9. X-ray detector according to claim 6, which is characterized in that the X-ray detector further include: protective layer,
The protective layer is filled in the gap between the thin film transistor (TFT) and the scintillator, by the shading piece, photosensitive layer and
Thin film transistor (TFT) is isolated with external environment.
10. a kind of display equipment, which is characterized in that described including X-ray detector as claim in any one of claims 6-9
Show that equipment further includes imaging device, the imaging device is electrically connected with the thin film transistor (TFT).
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| CN201910031218.6A CN109786499A (en) | 2019-01-11 | 2019-01-11 | Semiconductor, X-ray detector and display device |
| PCT/CN2019/129311 WO2020143485A1 (en) | 2019-01-11 | 2019-12-27 | Semiconductor, x-ray detector and display device |
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| CN201910031218.6A CN109786499A (en) | 2019-01-11 | 2019-01-11 | Semiconductor, X-ray detector and display device |
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| WO2020143485A1 (en) * | 2019-01-11 | 2020-07-16 | 惠科股份有限公司 | Semiconductor, x-ray detector and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2020143485A1 (en) * | 2019-01-11 | 2020-07-16 | 惠科股份有限公司 | Semiconductor, x-ray detector and display device |
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