CN109764972B - Temperature detection module, temperature monitoring circuit and power chip - Google Patents
Temperature detection module, temperature monitoring circuit and power chip Download PDFInfo
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Abstract
The application discloses a temperature detection module, a temperature monitoring circuit and a power chip. The temperature detection module includes: at least two current mirrors in cascade, wherein a first stage current mirror in the at least two current mirrors receives a reference current, and a last stage current mirror provides a driving current which is amplified by a magnification factor with the reference current; and at least one bipolar transistor connected in series, connected with the output end of the last stage current mirror of the at least two current mirrors, and the respective base collector is short-circuited to be connected in the form of a diode, wherein a detection signal is provided at the output end of the last stage current mirror, and the detection signal adopts the base emitter voltage of the at least one bipolar transistor to represent temperature information. The temperature detection module adopts a bipolar transistor as a sensitive element, so that the temperature detection module can be integrated in a chip.
Description
Technical Field
The present invention relates to semiconductor technology, and more particularly, to a temperature detection module, a temperature monitoring circuit, and a power chip.
Background
Fig. 1 shows a schematic block diagram of a power chip according to the prior art. The package body of the power chip 110 encapsulates the driving chips 111 to 113, the high-side switching tube M11 and the low-side switching tube M12 constituting the first bridge arm, the high-side switching tube M21 and the low-side switching tube M22 constituting the second bridge arm, the high-side switching tube M31 and the low-side switching tube M32 constituting the third bridge arm, and the thermistor RT.
The thermistor RT (which is divided into NTC and PTC resistors according to different polarities of temperature coefficients) detects the temperature of the chip so as to realize the function of temperature monitoring. For example, the PTC thermistor is connected to an external pull-up resistor via one pin of the power chip. The power supply voltage VCC is supplied to the pull-up resistor, thereby generating a bias current. The bias current flows through the thermistor PTC to convert the temperature information into a detection signal. The higher the accuracy of the detection signal, the more accurate the temperature monitoring of the power chip.
In order to ensure that the detection signal value is within the allowable fluctuation range, for a power chip packaged with the NTC thermistor, the fluctuation level of the power supply voltage VCC and the precision requirement of the pull-up resistor (when the fluctuation of the power supply voltage VCC is +/-1%, the precision of the pull-up resistor is 1%, and the fluctuation range of the detection signal is about +/-0.4V) are required to be clearly applied.
When a thermistor is used as a temperature sensor, the detection signal is affected by the power supply voltage VCC and the pull-up resistor, and the fluctuation range is large. The detection signal value and the temperature are in nonlinear relation. For the NTC thermistor, when the temperature is gradually reduced and the resistance of the thermistor is increased, at the moment, the detection signal is more and more close to the power supply voltage VCC, the NTC thermistor gradually tends to be saturated, and the nonlinearity is rapidly increased. Because the thermistor resistance and the temperature form a nonlinear relation, the batch dispersion is high, the detectable temperature range is small, and the reliable temperature monitoring of the power chip cannot be realized.
In addition, the thermistor is packaged inside the power chip, which itself requires additional die area, bonding wires, and additional pins for connecting the pull-up resistor, thus resulting in an increase in the size and application cost of the power chip. Inside the power chip, the thermistor is far away from the power device of the power chip due to the limitation of safety distance and the like, and cannot provide accurate chip temperature.
Therefore, it is desirable to replace the thermistor with a new temperature detection module to expand the linear range of the detection signal and improve the accuracy of temperature detection.
Disclosure of Invention
In view of the above, the present invention is directed to a temperature detection module, a temperature monitoring circuit and a power chip, wherein the temperature detection module uses a base emitter voltage VBE of a bipolar transistor to represent temperature information, and uses a compensation resistor to compensate a second-order temperature characteristic of the bipolar transistor, so that a linear range of a detection signal can be enlarged.
According to a first aspect of the present invention, there is provided a temperature detection module comprising: at least two current mirrors in cascade, wherein a first stage current mirror in the at least two current mirrors receives a reference current, and a last stage current mirror provides a driving current which is amplified by a magnification factor with the reference current; and at least one bipolar transistor connected in series, connected with the output end of the last stage current mirror of the at least two current mirrors, and the respective base collector is short-circuited to be connected in the form of a diode, wherein a detection signal is provided at the output end of the last stage current mirror, and the detection signal adopts the base emitter voltage of the at least one bipolar transistor to represent temperature information.
Preferably, the amplification factors of the at least two current mirrors are set according to the second-order temperature characteristic of the detection signal, thereby compensating the second-order temperature characteristic of the detection signal.
Preferably, the method further comprises: and a first resistor and a second resistor are connected in series between a power supply terminal and an input terminal of the first-stage current mirror so as to generate the reference current, wherein the temperature coefficients of the first resistor and the second resistor are opposite to each other so as to obtain a reference current with constant temperature coefficient.
Preferably, the method further comprises: and a third resistor connected in series with the at least one bipolar transistor between the output terminal of the final stage current mirror and ground.
Preferably, the amplification of the at least two current mirrors is set according to the following formula,Wherein Vt represents a detection signal of the temperature detection module, VBE represents a base emitter voltage of the at least one bipolar transistor, VREG represents a supply voltage, VGS represents source drain voltages of transistors in the at least two current mirrors, R10, R11 and R12 represent resistance values of a first resistor, a second resistor and a third resistor, respectively, k represents the number of the at least one bipolar transistor, m×n represents amplification factors of the at least two current mirrors, and wherein the amplification factors of the at least two current mirrors, the resistance values of the first resistor, the second resistor and the third resistor are set to compensate for the second term on the right of the above equation, thereby realizing temperature compensation.
According to a second aspect of the present invention, there is provided a temperature monitoring circuit comprising: the temperature detection module is used for obtaining detection signals; the operational amplifier, the in-phase input end with the reverse phase input end respectively receive the reference signal with the detected signal, the output provides the error signal, wherein, temperature monitoring circuit is according to the error signal produces the monitor signal, temperature detection module includes: at least two current mirrors in cascade, wherein a first stage current mirror in the at least two current mirrors receives a reference current, and a last stage current mirror provides a driving current which is amplified by a magnification factor with the reference current; and at least one bipolar transistor connected in series, connected with the output end of the last stage current mirror of the at least two current mirrors, and the respective base collector is short-circuited to be connected in the form of a diode, wherein a detection signal representing temperature information is provided at the output end of the last stage current mirror, and the detection signal represents temperature information by adopting the base emitter voltage of the at least one bipolar transistor.
Preferably, the amplification factors of the at least two current mirrors are set according to the second-order temperature characteristic of the detection signal, thereby compensating the second-order temperature characteristic of the detection signal.
Preferably, the method further comprises: and a first resistor and a second resistor are connected in series between a power supply terminal and an input terminal of the first-stage current mirror so as to generate the reference current, wherein the temperature coefficients of the first resistor and the second resistor are opposite to each other so as to obtain a reference current with constant temperature coefficient.
Preferably, the method further comprises: and a third resistor connected in series with the at least one bipolar transistor between the output terminal of the final stage current mirror and ground.
Preferably, the amplification factors of the at least two current mirrors are selected according to the following formula,Wherein Vt represents a detection signal of the temperature detection module, VBE represents a base emitter voltage of the at least one bipolar transistor, VREG represents a supply voltage, VGS represents source drain voltages of transistors in the at least two current mirrors, R10, R11 and R12 represent resistance values of a first resistor, a second resistor and a third resistor, respectively, k represents the number of the at least one bipolar transistor, m×n represents amplification factors of the at least two current mirrors, wherein the amplification factors of the at least two current mirrors, the resistance values of the first resistor, the second resistor and the third resistor are set to compensate for the second term on the right of the above equation, thereby realizing temperature compensation.
Preferably, the reference signal received by the operational amplifier is a reference signal obtained by compensating an input offset voltage of the operational amplifier.
Preferably, the monitoring device further comprises a driving module, wherein the driving module is connected with the operational amplifier so as to amplify the error signal into the monitoring signal.
Preferably, the driving module includes: the input end of the push-pull amplifier receives the error signal, and the output end of the push-pull amplifier provides the monitoring signal; and a low-resistance holding module connected between the output terminal and a ground terminal, wherein the low-resistance holding module provides a low-resistance path to ground when a transistor in the push-pull amplifier is saturated on, thereby maintaining a linear output.
Preferably, the low resistance holding module includes at least two resistors of opposite temperature coefficients connected in series between the output terminal and a ground terminal, or a pull-down constant current source.
Preferably, the push-pull amplifier includes: the power amplifier comprises a first amplifying transistor, a fourth resistor, a fifth resistor and a second amplifying transistor which are sequentially connected in series between a power supply end and a ground end, wherein the first amplifying transistor and the second amplifying transistor are respectively bipolar transistors and are of opposite types, an input end of the push-pull amplifier is connected to an intermediate node of the first amplifying transistor and an intermediate node of the second amplifying transistor, and an output end of the push-pull amplifier is connected to an intermediate node of the fourth resistor and the fifth resistor.
Preferably, the method further comprises: a sixth resistor connected between the inverting input terminal of the operational amplifier and the output terminal of the driving module; and a seventh resistor connected between the inverting input terminal of the operational amplifier and the output terminal of the temperature detection module, wherein the sixth resistor and the seventh resistor form a feedback loop of the operational amplifier.
According to a third aspect of the present invention, there is provided a power chip comprising: the high-side switch and the low-side switch tube are connected in series between a power supply end and a grounding end to form a bridge arm, and the middle node of the high-side switch and the low-side switch tube is connected to an output end; and a driving chip connected with the control end of the high-side switching tube and the control end of the low-side switching tube, and respectively providing a first switching control signal and a second switching control signal, wherein a temperature monitoring circuit is integrated in the driving chip, and the temperature monitoring circuit comprises: the temperature detection module is used for obtaining detection signals; the operational amplifier, the in-phase input end with the reverse phase input end respectively receive the reference signal with the detected signal, the output provides the error signal, wherein, temperature monitoring circuit is according to the error signal produces the monitor signal, temperature detection module includes: at least two current mirrors in cascade, wherein a first stage current mirror in the at least two current mirrors receives a reference current, and a last stage current mirror provides a driving current which is amplified by a magnification factor with the reference current; and at least one bipolar transistor connected in series, connected with the output end of the last stage current mirror of the at least two current mirrors, and the respective base collector is short-circuited to be connected in the form of a diode, wherein a detection signal representing temperature information is provided at the output end of the last stage current mirror, and the detection signal represents temperature information by adopting the base emitter voltage of the at least one bipolar transistor.
Preferably, the amplification factors of the at least two current mirrors are set according to the second-order temperature characteristic of the detection signal, thereby compensating the second-order temperature characteristic of the detection signal.
Preferably, the method further comprises: and a first resistor and a second resistor are connected in series between a power supply terminal and an input terminal of the first-stage current mirror so as to generate the reference current, wherein the temperature coefficients of the first resistor and the second resistor are opposite to each other so as to obtain a reference current with constant temperature coefficient.
Preferably, the method further comprises: and a third resistor connected in series with the at least one bipolar transistor between the output terminal of the final stage current mirror and ground.
Preferably, the amplification factors of the at least two current mirrors are selected according to the following formula,Wherein Vt represents a detection signal of the temperature detection module, VBE represents a base emitter voltage of the at least one bipolar transistor, VREG represents a supply voltage, VGS represents source drain voltages of transistors in the at least two current mirrors, R10, R11 and R12 represent resistance values of a first resistor, a second resistor and a third resistor, respectively, k represents the number of the at least one bipolar transistor, m×n represents amplification factors of the at least two current mirrors, wherein the amplification factors of the at least two current mirrors, the resistance values of the first resistor, the second resistor and the third resistor are set to compensate for the second term on the right of the above equation, thereby realizing temperature compensation.
Preferably, the reference signal received by the operational amplifier is a reference signal obtained by compensating an input offset voltage of the operational amplifier.
Preferably, the monitoring device further comprises a driving module, wherein the driving module is connected with the operational amplifier so as to amplify the error signal into the monitoring signal.
Preferably, the driving module includes: the input end of the push-pull amplifier receives the error signal, and the output end of the push-pull amplifier provides the monitoring signal; and a low-resistance holding module connected between the output terminal and a ground terminal, wherein the low-resistance holding module provides a low-resistance path to ground when a transistor in the push-pull amplifier is saturated on, thereby maintaining a linear output.
Preferably, the low resistance holding module includes at least two resistors of opposite temperature coefficients connected in series between the output terminal and a ground terminal, or a pull-down constant current source.
Preferably, the push-pull amplifier includes: the power amplifier comprises a first amplifying transistor, a fourth resistor, a fifth resistor and a second amplifying transistor which are sequentially connected in series between a power supply end and a ground end, wherein the first amplifying transistor and the second amplifying transistor are respectively bipolar transistors and are of opposite types, an input end of the push-pull amplifier is connected to an intermediate node of the first amplifying transistor and an intermediate node of the second amplifying transistor, and an output end of the push-pull amplifier is connected to an intermediate node of the fourth resistor and the fifth resistor.
Preferably, the method further comprises: a sixth resistor connected between the inverting input terminal of the operational amplifier and the output terminal of the driving module; and a seventh resistor connected between the inverting input terminal of the operational amplifier and the output terminal of the temperature detection module, wherein the sixth resistor and the seventh resistor form a feedback loop of the operational amplifier.
In the temperature monitoring circuit of this embodiment, the temperature detection module characterizes the temperature information with the base emitter voltage VBE of the bipolar transistor. Since bipolar transistors are used as sensing elements, the temperature detection module can be integrated in a chip. The modules of the temperature monitoring circuit can be realized by adopting a universal BCD process. The BCD process is a monolithic IC fabrication process that combines bipolar and CMOS processes. Therefore, a temperature monitoring circuit can be integrated inside the driving chip of the power chip, so that a temperature sensitive resistor is omitted. The temperature monitoring circuit integrated inside the chip improves the accuracy of temperature measurement.
In a preferred embodiment, the temperature detection module sets the amplification factor of the current mirror according to the second-order temperature characteristic of the detection signal, thereby compensating the second-order temperature characteristic of the detection signal, and thus expanding the linear range of the high temperature region. The temperature detection module may further include a low-resistance holding module providing a low-resistance path to ground when the transistor in the push-pull amplifier is saturated on, thereby maintaining a linear output of the monitor signal, and thus the linear range of the low temperature region may be enlarged. According to the temperature monitoring module provided by the embodiment of the invention, the linear range is enlarged in the high-low temperature area, so that the detection range of the temperature can be enlarged.
In the existing power chip, the thermistor and the driving chip are independent elements, are connected by adopting bonding wires and are then packaged in the same packaging body. Unlike the prior art, the temperature monitoring module according to the embodiment of the invention is integrated inside the driving chip, so that bonding connection at the packaging stage and additional pins and peripheral elements of the power chip can be omitted.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent from the following description of embodiments of the present invention with reference to the accompanying drawings.
Fig. 1 shows a schematic block diagram of a power chip according to the prior art.
Fig. 2 shows a schematic block diagram of a temperature monitoring circuit according to an embodiment of the invention.
FIG. 3 shows a plot of the detected signal versus temperature for the temperature monitoring circuit of FIG. 1.
Fig. 4 shows a schematic circuit diagram of a temperature detection module of the temperature monitoring circuit of fig. 1.
Fig. 5 shows a schematic circuit diagram of a driving module of the temperature monitoring circuit in fig. 1.
Fig. 6 shows a schematic block diagram of a power chip according to an embodiment of the invention.
Detailed Description
Various embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. The same reference numbers will be used throughout the drawings to refer to the same or like parts. For clarity, the various features of the drawings are not drawn to scale.
The invention will be further described with reference to the drawings and examples.
Fig. 2 shows a schematic block diagram of a temperature monitoring circuit according to an embodiment of the invention.
The temperature monitoring circuit 100 includes a temperature detection module 110, an operational amplifier 120, a driving module 130, and resistors R0 and R1.
The temperature detection module 110 characterizes the temperature information with the base emitter voltage VBE of the bipolar transistor, thereby generating a detection signal Vt. The non-inverting input terminal and the inverting input terminal of the operational amplifier 120 respectively receive the reference signal Vref and the detection signal Vt, and the output terminal provides the error signal Va. The reference signal Vref is an internal reference voltage, and is ideally zero temperature coefficient (within a wide temperature range rather than at a certain temperature point). Since the operational amplifier 120 does not have an output driving capability, the driving module 130 acts as an output buffer stage to amplify the error signal Va into the monitor signal Vtm, thereby improving the driving capability of the port and providing the electrostatic protection characteristic.
The resistors R0 and R1 form a feedback loop, and the resistor types of the two are consistent to meet the principle of matching. Resistor R0 is connected between the inverting input of operational amplifier 120 and the output of driver module 130, and resistor R1 is connected between the inverting input of operational amplifier 120 and the output of temperature sensing module 110. The feedback loop feeds back the monitor signal Vtm to the inverting input of the operational amplifier 120.
In the temperature monitoring circuit 100 of this embodiment, the temperature detection module 110 uses the base emitter voltage VBE of the bipolar transistor to characterize temperature information, and compensates the second-order temperature characteristic, so that the linear range of the detection signal can be enlarged.
Further, each module of the temperature monitoring circuit 100 may be implemented by a general BCD process. The BCD process is a monolithic IC fabrication process that combines bipolar and CMOS processes, and can produce bipolar and MOS field effect transistors on a wafer. Thus, the temperature monitoring circuit 100 and the MCU (microcontroller) may be integrated simultaneously in the power chip.
In the existing power chip, the thermistor and the MCU are independent elements, are connected by adopting bonding wires and are then packaged in the same packaging body. Unlike the prior art, the temperature monitoring module and the MCU according to the embodiment of the invention can be integrated into a single chip, so that the bonding connection in the packaging stage and the additional pins and peripheral elements of the power chip can be omitted.
FIG. 3 shows a plot of the detected signal versus temperature for the temperature monitoring circuit of FIG. 1.
In the temperature monitoring circuit 100 according to the embodiment of the present invention, the temperature detection module 110 obtains the detection signal Vt representing the temperature information, the operational amplifier 120 compares the detection signal Vt with the reference signal Vref to generate the error signal Va, and the driving module 130 amplifies the error signal Va to the monitoring signal Vtm.
The signal relationship of the temperature monitoring circuit 100 can be derived from the following equation:
Wherein Vt represents the detection signal at the inverting input terminal of the operational amplifier, vtm0 represents the initial detection signal obtained by the temperature detection module, vref0 represents the initial reference signal, vos represents the input offset voltage of the operational amplifier 120, R0 represents the value of the resistor R0, and R1 represents the value of the resistor R1.
So that there is a method of producing a light-emitting diode,
Thus, as can be seen from equation 2, the initial detection signal Vtm0 is composed of two parts, namely, the initial reference signal Vref0 at the non-inverting input terminal and the detection signal Vt at the inverting input terminal of the operational amplifier.
In the invention, since a high-precision monitoring signal is required to be obtained, a trimming mode for compensating the input offset voltage Vos is designed, namely, the input offset voltage Vos is equivalent to the reference signal Vref so as to offset the input offset voltage Vos. Thus, the monitoring signal Vtm can be further expressed as:
Wherein Vref represents a reference signal obtained by compensating the input offset voltage Vos in the initial reference signal Vref 0.
If the temperature characteristic of the proportional resistance is ignored, the temperature coefficient k T expression of the monitor signal Vtm can be obtained:
in the temperature monitoring circuit of the embodiment of the invention, the temperature coefficient of the reference signal Vref is designed to be zero temperature characteristic in a wide range, and the detection signal Vt is a negative temperature coefficient, so that voltage output of the monitoring signal Vtm with positive temperature coefficient linearly changing along with temperature is realized. Compared with a packaging thermistor (NTC/PTC) mode, the temperature and voltage characteristics obtained by the embodiment of the invention are obviously improved.
In the low temperature region, vtm is not less than Vref, a current path of the detection signal Vt and the monitor signal Vtm to the reference ground will occur, and if the ground path of the driving module 130 is not properly designed, the monitor signal Vtm will be nonlinear.
Referring to fig. 3, curves Ls1 and Ls2 respectively represent output characteristics of a temperature monitoring circuit of the prior art, and the temperature range of the linear output is small, and the linear output enters a nonlinear region at high and low temperatures. Curve La represents the output characteristic of the temperature monitoring circuit according to an embodiment of the present invention. The linear range of the monitoring signal Vtm is approximately-40-150 ℃, and the output saturation voltage v0 approximately equal to 0 in the low temperature region.
Therefore, the temperature monitoring module according to the embodiment of the invention expands the linear range in both high and low temperature areas.
Fig. 4 shows a schematic circuit diagram of a temperature detection module of the temperature monitoring circuit of fig. 1.
The temperature detection module 110 includes at least two cascaded current mirrors. In the example, the temperature detection module includes NMOS transistors N0 and N1 constituting the first current mirror, and PMOS transistors P0 and P1 constituting the second current mirror. The NMOS transistors N0 and N1 have a width to length ratio of 1: m, PMOS transistors P0 and P1 are 1: n.
The resistors R10 and R11 are resistors with opposite temperature characteristics, and are connected in series with the NMOS transistor N0 between the power supply terminal VREG and the ground terminal GND, so as to generate a reference current Iref with a constant temperature coefficient, thereby realizing temperature compensation. The reference current is coupled through the first current mirror and the second current mirror as a drive current io=n×m×iref.
Further, the PMOS transistor P1, the k bipolar transistors Q10, and the resistor R12 are sequentially connected in series between the power supply terminal VREG and the ground terminal GND. The bipolar transistors Q10 are connected as diodes, respectively, i.e. the base collector is shorted. The voltage drop generated at each bipolar transistor Q10 is the base emitter voltage VBE. This embodiment uses the base emitter voltage VBE of k bipolar transistors Q10 to characterize the temperature information, where k is an integer greater than or equal to 1.
From the above schematic circuit diagram, an expression of the detection signal Vt can be given:
Wherein Vt represents a detection signal obtained by the temperature detection module, VBE represents a base emitter voltage of the bipolar transistor Q10, VREG represents a supply voltage, VGS represents a source drain voltage of the PMOS transistor P1, R10, R11 and R12 respectively represent resistance values of corresponding resistors in the diagram, k represents the number of the bipolar transistors Q10, and m and n respectively represent current amplification factors of the first current mirror and the second current mirror.
According to the foregoing, the resistors R10 and R11 have a certain temperature compensation effect, and the second term on the right of equation 5 is a second-order term of the temperature characteristic, so that the second-order temperature characteristic of VBE can be effectively compensated. Therefore, the size ratios m and n of the NMOS/PMOS transistors and the resistors R10, R11, R12 can be adjusted to achieve linearization of the negative temperature characteristic of the detection signal Vt, i.e
Where C represents the first order temperature coefficient (i.e., constant) of the base emitter voltage VBE of bipolar transistor Q10.
As can be seen from equation 6, the temperature detection module 110 characterizes temperature information with the base emitter voltage VBE of the bipolar transistor and compensates for the second order temperature characteristic, so that the linear range of the detection signal can be widened in the high temperature region.
Fig. 5 shows a schematic circuit diagram of a driving module of the temperature monitoring circuit in fig. 1.
The operational amplifier 120 and the driving module 130 in the temperature monitoring circuit 100 perform signal processing on the detection signal Vt obtained by the temperature detection module 110 to obtain a monitoring signal Vtm.
The driving module 130 includes bipolar transistors Q20 and Q21 of opposite types, and resistors R20 and R21.
The bipolar transistor Q20, the resistors R20 and R21, and the bipolar transistor Q21 are sequentially connected in series between the power supply terminal VCC and the ground terminal GND, thereby constituting the push-pull amplifier 131. The load charge-discharge current of the push-pull amplifier 131 depends on the emitter areas of the bipolar transistors Q0 and Q1. The bases of bipolar transistors Q20 and Q21 are commonly connected to the input to receive error signal Va. The intermediate nodes of resistors R20 and R21 are connected to the output to provide the monitor signal Vtm. The resistors R20 and R21 function to improve the electrostatic protection capability of the output port.
Based on the above equation 6, the temperature system k T of the monitoring signal Vtm, expressed as
Where k represents the number of bipolar transistors Q10 in the temperature detection module 110, and C represents a first order temperature coefficient (i.e., constant) of the base emitter voltage VBE of the bipolar transistor Q10.
As can be seen from equation 7, the temperature detection module 110 in the temperature monitoring circuit 100 characterizes temperature information with the base emitter voltage VBE of the bipolar transistor and compensates for the second-order temperature characteristic, so that the linear range of the detection signal can be expanded in a high temperature region. Therefore, the monitor signal Vtm also expands the linear range of the detection signal accordingly.
In a preferred embodiment, the drive module 130 may include an additional low resistance holding module 132. The low resistance holding block 132 is, for example, two resistors of opposite temperature coefficients connected in series between the output terminal and the ground terminal, or a pull-down constant current source.
In the medium-high temperature region, the error signal Va at the input of the push-pull amplifier 131 is higher than the ground, and the bipolar transistor Q21 is linearly turned on. The monitoring signal Vtm is correlated with the detection signal Vt so that the temperature information is characterized by the detection signal Vt.
In the low temperature region, the error signal Va at the input of the push-pull amplifier 131 is close to ground, and the bipolar transistor Q21 is saturated on. The low-resistance holding block 132 provides a low-resistance path to ground when the transistors in the push-pull amplifier are saturated on, thereby maintaining a linear output of the monitor signal Vtm.
The driving module 130 of the preferred embodiment can also ensure that the monitor signal Vtm continues to maintain a linear variation under the condition that the bipolar transistor in the low temperature region push-pull amplifier 131 is saturated and turned on, so that the problem of nonlinearity of the output of the monitor signal Vtm in the low temperature region can be effectively improved.
Fig. 6 shows a schematic block diagram of a power chip according to an embodiment of the invention. The package body of the power chip 210 encloses the driving chips 211 to 213, the high-side switching tube M21 and the low-side switching tube M12 constituting the first bridge arm, the high-side switching tube M21 and the low-side switching tube M22 constituting the second bridge arm, and the high-side switching tube M31 and the low-side switching tube M32 constituting the third bridge arm.
The driving chip 211 is connected to the control terminal M11 of the high-side switching tube and the control terminal M12 of the low-side switching tube, and provides corresponding switching control signals. The driving chip 212 is connected to the control terminal M21 of the high-side switching tube and the control terminal M22 of the low-side switching tube, and provides corresponding switching control signals. The driving chip 213 is connected to the control terminal M31 of the high-side switching transistor and the control terminal M32 of the low-side switching transistor, and provides corresponding switching control signals, respectively.
Further, the temperature monitoring circuit 100 shown in fig. 2 is integrated in the driving chip 211. Since the package of the power chip 210 encapsulates the driving chips 211 to 213, the high-side switching tube M21 and the low-side switching tube M12 which constitute the first bridge arm, the high-side switching tube M21 and the low-side switching tube M22 which constitute the second bridge arm, and the high-side switching tube M31 and the low-side switching tube M32 which constitute the third bridge arm, when the temperature of the power chip 210 increases, the temperature of the driving chip 211 increases accordingly, and the temperature detection circuit (Temperature Sensor) 110 integrated therein converts the temperature signal into a linear voltage signal VTH.
In an actual product (e.g., a mobile power supply or a charger), the power chip 210 is connected to the Microcontroller (MCU) 220, and directly sends a voltage signal VTH to the MCU, so as to monitor the temperature of the intelligent power module in real time.
It should be noted that in this document relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
Embodiments in accordance with the present invention, as described above, are not intended to be exhaustive or to limit the invention to the precise embodiments disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention and various modifications as are suited to the particular use contemplated. The invention is limited only by the claims and the full scope and equivalents thereof.
Claims (27)
1. A temperature detection module, comprising:
At least two current mirrors in cascade, wherein a first stage current mirror in the at least two current mirrors receives a reference current, and a last stage current mirror provides a driving current which is amplified by a magnification factor with the reference current; and
At least one bipolar transistor connected in series, connected to the output of the last stage current mirror of the at least two current mirrors, and the respective base collectors being shorted to connect in the form of a diode,
The temperature detection module is integrated in the driving chip, and provides a detection signal at the output end of the final-stage current mirror, wherein the detection signal adopts the base emitter voltage of the at least one bipolar transistor to represent temperature information.
2. The temperature detection module of claim 1, wherein the amplification of the at least two current mirrors is set according to a second order temperature characteristic of the detection signal, thereby compensating for the second order temperature characteristic of the detection signal.
3. The temperature detection module of claim 2, further comprising:
a first resistor and a second resistor connected in series between a supply terminal and an input terminal of the first stage current mirror, thereby generating the reference current,
Wherein the temperature coefficients of the first resistor and the second resistor are opposite to obtain a reference current with constant temperature coefficient.
4. The temperature detection module of claim 3, further comprising:
and a third resistor connected in series with the at least one bipolar transistor between the output terminal of the final stage current mirror and ground.
5. The temperature detection module of claim 4, wherein the amplification factors of the at least two current mirrors are set according to the following formula,
Wherein Vt represents a detection signal of the temperature detection module, VBE represents a base emitter voltage of the at least one bipolar transistor, VREG represents a supply voltage, VGS represents source drain voltages of transistors in the at least two current mirrors, R10, R11 and R12 represent resistance values of a first resistor, a second resistor and a third resistor respectively, k represents the number of the at least one bipolar transistor, m represents an amplification factor of the at least two current mirrors,
Wherein the values of the amplification times, the first resistance, the second resistance, and the third resistance of the at least two current mirrors are set to compensate for the second term to the right of the above equation, thereby realizing temperature compensation.
6. A temperature monitoring circuit, comprising:
The temperature detection module is used for obtaining detection signals;
an operational amplifier, the in-phase input terminal and the anti-phase input terminal respectively receive the reference signal and the detection signal, the output terminal provides an error signal,
Wherein the temperature monitoring circuit generates a monitoring signal according to the error signal,
The temperature detection module includes:
At least two current mirrors in cascade, wherein a first stage current mirror in the at least two current mirrors receives a reference current, and a last stage current mirror provides a driving current which is amplified by a magnification factor with the reference current; and
At least one bipolar transistor connected in series, connected to the output of the last stage current mirror of the at least two current mirrors, and the respective base collectors being shorted to connect in the form of a diode,
The temperature detection module is integrated in the driving chip, and provides a detection signal representing temperature information at the output end of the final-stage current mirror, wherein the detection signal adopts the base emitter voltage of the at least one bipolar transistor to represent the temperature information.
7. The temperature monitoring circuit of claim 6, wherein the amplification of the at least two current mirrors is set according to a second order temperature characteristic of the detection signal, thereby compensating for the second order temperature characteristic of the detection signal.
8. The temperature monitoring circuit of claim 7, further comprising:
a first resistor and a second resistor connected in series between a supply terminal and an input terminal of the first stage current mirror, thereby generating the reference current,
Wherein the temperature coefficients of the first resistor and the second resistor are opposite to obtain a reference current with constant temperature coefficient.
9. The temperature monitoring circuit of claim 8, further comprising:
and a third resistor connected in series with the at least one bipolar transistor between the output terminal of the final stage current mirror and ground.
10. The temperature monitoring circuit of claim 9 wherein the amplification factors of the at least two current mirrors are selected according to the formula,
Wherein Vt represents a detection signal of the temperature detection module, VBE represents a base emitter voltage of the at least one bipolar transistor, VREG represents a supply voltage, VGS represents source drain voltages of transistors in the at least two current mirrors, R10, R11 and R12 represent resistance values of a first resistor, a second resistor and a third resistor respectively, k represents the number of the at least one bipolar transistor, m represents an amplification factor of the at least two current mirrors,
Wherein the values of the amplification times, the first resistance, the second resistance, and the third resistance of the at least two current mirrors are set to compensate for the second term to the right of the above equation, thereby realizing that the temperature is compensated.
11. The temperature monitoring circuit of claim 6, wherein the reference signal received by the operational amplifier is a reference signal obtained by compensating for an input offset voltage of the operational amplifier.
12. A temperature monitoring circuit according to any one of claims 6 to 11 further comprising a drive module connected to the operational amplifier to amplify the error signal to the monitoring signal.
13. The temperature monitoring circuit of claim 12, wherein the drive module comprises:
the input end of the push-pull amplifier receives the error signal, and the output end of the push-pull amplifier provides the monitoring signal; and
A low resistance holding module connected between the output terminal and the ground terminal,
Wherein the low-resistance holding module provides a low-resistance path to ground when transistors in the push-pull amplifier are saturated on, thereby maintaining a linear output.
14. The temperature monitoring circuit of claim 13, wherein the low resistance holding module comprises at least two resistors of opposite temperature coefficients connected in series between the output terminal and ground terminal, or a pull-down constant current source.
15. The temperature monitoring circuit of claim 13, wherein the push-pull amplifier comprises:
A first amplifying transistor, a fourth resistor, a fifth resistor and a second amplifying transistor which are sequentially connected in series between a power supply end and a grounding end,
The first amplifying transistor and the second amplifying transistor are bipolar transistors and are of opposite types respectively, the input end of the push-pull amplifier is connected to the intermediate node of the first amplifying transistor and the second amplifying transistor, and the output end of the push-pull amplifier is connected to the intermediate node of the fourth resistor and the fifth resistor.
16. The temperature monitoring circuit of claim 12, further comprising:
a sixth resistor connected between the inverting input terminal of the operational amplifier and the output terminal of the driving module; and
A seventh resistor connected between the inverting input terminal of the operational amplifier and the output terminal of the temperature detection module,
Wherein the sixth resistor and the seventh resistor form a feedback loop of the operational amplifier.
17. A power chip, comprising:
The high-side switch tube and the low-side switch tube are connected in series to form a bridge arm between a power supply end and a grounding end, and the middle node of the high-side switch tube and the low-side switch tube is connected to an output end; and
The driving chip is connected with the control end of the high-side switching tube and the control end of the low-side switching tube and respectively provides a first switching control signal and a second switching control signal,
Wherein, integrate temperature monitoring circuit in the drive chip, temperature monitoring circuit includes:
The temperature detection module is used for obtaining detection signals;
an operational amplifier, the in-phase input terminal and the anti-phase input terminal respectively receive the reference signal and the detection signal, the output terminal provides an error signal,
Wherein the temperature monitoring circuit generates a monitoring signal according to the error signal,
The temperature detection module includes:
At least two current mirrors in cascade, wherein a first stage current mirror in the at least two current mirrors receives a reference current, and a last stage current mirror provides a driving current which is amplified by a magnification factor with the reference current; and
At least one bipolar transistor connected in series, connected to the output of the last stage current mirror of the at least two current mirrors, and the respective base collectors being shorted to connect in the form of a diode,
The temperature detection module is integrated in the driving chip, and provides a detection signal representing temperature information at the output end of the final-stage current mirror, wherein the detection signal adopts the base emitter voltage of the at least one bipolar transistor to represent the temperature information.
18. The power chip of claim 17, wherein the amplification of the at least two current mirrors is set according to a second order temperature characteristic of the detection signal, thereby compensating for the second order temperature characteristic of the detection signal.
19. The power chip of claim 18, further comprising:
a first resistor and a second resistor connected in series between a supply terminal and an input terminal of the first stage current mirror, thereby generating the reference current,
Wherein the temperature coefficients of the first resistor and the second resistor are opposite to obtain a reference current with constant temperature coefficient.
20. The power chip of claim 19, further comprising:
and a third resistor connected in series with the at least one bipolar transistor between the output terminal of the final stage current mirror and ground.
21. The power chip of claim 20, wherein the amplification factors of the at least two current mirrors are selected according to the following formula,
Wherein Vt represents a detection signal of the temperature detection module, VBE represents a base emitter voltage of the at least one bipolar transistor, VREG represents a supply voltage, VGS represents source drain voltages of transistors in the at least two current mirrors, R10, R11 and R12 represent resistance values of a first resistor, a second resistor and a third resistor respectively, k represents the number of the at least one bipolar transistor, m represents an amplification factor of the at least two current mirrors,
Wherein the values of the amplification times, the first resistance, the second resistance, and the third resistance of the at least two current mirrors are set to compensate for the second term to the right of the above equation, thereby realizing that the temperature is compensated.
22. The power chip of claim 17, wherein the reference signal received by the operational amplifier is a reference signal obtained by compensating for an input offset voltage of the operational amplifier.
23. The power chip of any one of claims 17 to 22, further comprising a drive module connected to the operational amplifier to amplify the error signal into the monitor signal.
24. The power chip of claim 23, wherein the drive module comprises:
the input end of the push-pull amplifier receives the error signal, and the output end of the push-pull amplifier provides the monitoring signal; and
A low resistance holding module connected between the output terminal and the ground terminal,
Wherein the low-resistance holding module provides a low-resistance path to ground when transistors in the push-pull amplifier are saturated on, thereby maintaining a linear output.
25. The power chip of claim 24, wherein the low resistance holding module comprises at least two resistors of opposite temperature coefficients connected in series between the output terminal and ground terminal, or a pull-down constant current source.
26. The power chip of claim 24, wherein the push-pull amplifier comprises:
A first amplifying transistor, a fourth resistor, a fifth resistor and a second amplifying transistor which are sequentially connected in series between a power supply end and a grounding end,
The first amplifying transistor and the second amplifying transistor are bipolar transistors and are of opposite types respectively, the input end of the push-pull amplifier is connected to the intermediate node of the first amplifying transistor and the second amplifying transistor, and the output end of the push-pull amplifier is connected to the intermediate node of the fourth resistor and the fifth resistor.
27. The power chip of claim 23, further comprising:
a sixth resistor connected between the inverting input terminal of the operational amplifier and the output terminal of the driving module; and
A seventh resistor connected between the inverting input terminal of the operational amplifier and the output terminal of the temperature detection module,
Wherein the sixth resistor and the seventh resistor form a feedback loop of the operational amplifier.
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| CN110515417A (en) * | 2019-09-18 | 2019-11-29 | 北京智芯微电子科技有限公司 | The realization device of Low Drift Temperature a reference source |
| CN110849493B (en) * | 2019-11-22 | 2021-03-16 | 成都三零嘉微电子有限公司 | Temperature detection circuit |
| CN113465764B (en) * | 2020-03-31 | 2023-01-10 | 圣邦微电子（北京）股份有限公司 | Analog output integrated temperature sensor |
| CN112305281A (en) * | 2020-10-23 | 2021-02-02 | 北京盈拓润达电气科技有限公司 | Fault indicator test system and high-voltage power amplifying circuit thereof |
| CN113063514A (en) * | 2021-02-22 | 2021-07-02 | 深圳阜时科技有限公司 | Temperature detection circuit, fingerprint chip module and electronic equipment |
| CN113140527A (en) * | 2021-04-15 | 2021-07-20 | 哈尔滨工业大学 | Power device capable of accurately monitoring temperature and radio frequency characteristics in real time and packaging method thereof |
| CN114396746A (en) * | 2022-01-25 | 2022-04-26 | 烟台艾睿光电科技有限公司 | Control method and control system for refrigerating machine |
| CN115855289B (en) * | 2023-02-14 | 2023-05-02 | 晶艺半导体有限公司 | Temperature detection module and over-temperature protection circuit |
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