CN109742056A - The encapsulating structure and packaging method of antenna - Google Patents
The encapsulating structure and packaging method of antenna Download PDFInfo
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- CN109742056A CN109742056A CN201910120903.6A CN201910120903A CN109742056A CN 109742056 A CN109742056 A CN 109742056A CN 201910120903 A CN201910120903 A CN 201910120903A CN 109742056 A CN109742056 A CN 109742056A
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- wiring layer
- feeder column
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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Abstract
The present invention provides the encapsulating structure and packaging method of a kind of antenna, and encapsulating structure includes re-wiring layer, patterned seed layer, metal feeder column, encapsulated layer, antenna metal layer, antenna circuit chip and metal coupling.Metal feeder column is formed in the patterned seed layer using the method for plating or chemical plating, and between 100 microns~1000 microns, antenna circuit chip is electrically connected radial width by re-wiring layer and metal feeder column and antenna metal layer.The present invention forms antenna metal feeder pillar by the way of plating or chemical plating, can obtain the metal feeder column of major diameter, improves structural strength, reduces process deviation, while can reduce feeder loss, improves the efficiency and performance of antenna.The present invention can obtain the antenna structure layer of multilayered structure, and stacked antenna structure has certain loss, and the present invention can substantially reduce the loss of stacked antenna structure using being relatively large in diameter, lower metal feeder column being lost.
Description
Technical field
The invention belongs to field of semiconductor package, more particularly to the encapsulating structure and packaging method of a kind of antenna.
Background technique
Due to the progress of science and technology, various high-tech electronic products are developed to facilitate people's lives, including each
Kind electronic device, such as: notebook computer, mobile phone, tablet computer (PAD).
With universal and people's demand the increase of these high-tech electronic products, in addition to institute in these high-tech products
Outside the various functions of configuration and application increase considerably, wireless telecommunications are increased especially for the mobile demand of cooperation people
Function.Then, people can be installed on any place or be appointed by these high-tech electronics with wireless communication function
When quarter uses these high-tech electronic products.To significantly increase the flexibility that these high-tech electronic products use
With convenience, therefore, people need not be again limited in a fixed region, break the boundary of use scope, so that
The application of these electronic products veritably facilitates people's lives.
In general, existing antenna structure generally includes dipole antenna (Dipole Antenna), unipole antenna
(Monopole Antenna), plate aerial (Patch Antenna), inverted-F antenna (Planar Inverted-F
Antenna), indentation antenna (Meander Line Antenna), inversed l-shaped antenna (Inverted-L Antenna), follow
Loop antenna (Loop Antenna), helical antenna (Spiral Antenna) and spring antenna (Spring Antenna) etc..
The known practice is that antenna is directly made in the surface of circuit board, and this practice can allow antenna to occupy additional circuit plate face
Product, conformability are poor.The area of circuit board shared by antenna how is reduced, the integration performance and antenna of antenna packages structure are improved
Efficiency is overcome the problems, such as needed for these electronic devices.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of encapsulating structure of antenna and envelopes
Dress method, the efficiency and performance for solving the problems, such as antenna in the prior art are lower.
In order to achieve the above objects and other related objects, the present invention provides a kind of encapsulating structure of antenna, the encapsulation knot
Structure includes: re-wiring layer, and the re-wiring layer includes the first face and the second opposite face；Patterned seed layer, shape
On second face of re-wiring layer described in Cheng Yu；Metal feeder column is formed in the figure using the method for plating or chemical plating
In the seed layer of change, the radial width of the metal feeder column is between 100 microns~1000 microns；Encapsulated layer coats institute
Metal feeder column is stated, and its top surface appears the metal feeder column；Antenna metal layer is formed on the encapsulated layer, the day
Line metal layer is connect with the metal feeder column；Antenna circuit chip, is incorporated into the first face of the re-wiring layer, and passes through
The re-wiring layer and the metal feeder column and the antenna metal layer are electrically connected；And metal coupling, it is formed in
First face of the re-wiring layer, to realize that the electrical of the re-wiring layer is drawn.
Optionally, the material of the seed layer includes one of Ti, TiN, Ta, TaN, the material of the metal feeder column
Including one of Au, Ag, Cu, Al.
It optionally, further include the second antenna structure, second antenna structure includes: patterned second of sublayer, shape
On antenna metal layer described in Cheng Yu；Second metal feeder column is formed in the second seed using the method for plating or chemical plating
It is formed on layer；Second encapsulated layer coats the second metal feeder column, and its top surface appears the second metal feeder column；The
Two antenna metal layers are formed on second encapsulated layer, and the second antenna metal layer and the second metal feeder column connect
It connects.
Optionally, second antenna structure is not less than two, to form the second antenna structure of multiple-level stack.
Optionally, the material of the encapsulated layer includes one of polyimides, silica gel and epoxy resin.
Optionally, the antenna circuit chip includes one or both of driving component and passive component, wherein described
Driving component includes one of electric power management circuit, transmit circuit and reception circuit, and the passive component includes resistance, capacitor
And one of inductance.
Optionally, the metal coupling includes one of tin solder, silver solder and gold-tin eutectic solder.
The present invention also provides a kind of packaging method of antenna, the packaging method comprising steps of 1) provide a support substrate,
In forming separating layer in the support substrate；2) re-wiring layer is formed in Yu Suoshu separating layer, the re-wiring layer includes
The first face and the second opposite face being connect with the separating layer；3) figure is formed on the second face of Yu Suoshu re-wiring layer
The seed layer of change, using the method for plating or chemical plating in formation metal feeder column in the seed layer；4) it is sealed using encapsulated layer
The metal feeder column is filled, the encapsulated layer is thinned, so that the top surface of the metal feeder column is exposed to the encapsulated layer；5) in
Antenna metal layer is formed on the encapsulated layer, the antenna metal layer is connect with the metal feeder column；6) it is based on the separation
Layer removes the re-wiring layer and the support substrate, exposes the first face of the re-wiring layer；7) antenna electric is provided
The antenna circuit chip is engaged in the first face of the re-wiring layer by road chip, so that the antenna circuit chip is logical
It crosses the re-wiring layer and the metal feeder column and the antenna metal layer is electrically connected；And 8) Yu Suoshu cloth again
First face of line layer forms metal coupling, to realize that the electrical of the re-wiring layer is drawn.
Optionally, the support substrate includes glass substrate, metal substrate, semiconductor substrate, polymer substrate and ceramics
One of substrate.
Optionally, the separating layer includes photothermal transformation layer, and step 6) uses photothermal transformation layer described in laser irradiation, so that
The photothermal transformation layer is separated with the encapsulated layer and the support substrate, and then removes the re-wiring layer and the support
Substrate.
Optionally, step 2) makes the re-wiring layer comprising steps of 2-1) first is formed in the separation layer surface
Dielectric layer；The first metal layer 2-2) is formed in the first medium layer surface using sputtering technology, and the metal layer is carried out
Etching forms patterned first metal wiring layer；2-3) second is formed in the patterned first metal line layer surface to be situated between
Matter layer, and the second dielectric layer is performed etching to form the second dielectric layer with graphical through-hole；2-4) Yu Suoshu figure
Change and fill conductive plug in through-hole, second metal layer is then formed in the second medium layer surface using sputtering technology, and right
The metal layer performs etching to form patterned second metal wiring layer.
Optionally, further comprise the steps of: and repeat step 2-3)~step 2-4), there is multilayer lamination structure to be formed
Re-wiring layer.
Optionally, the material of the dielectric layer includes epoxy resin, silica gel, PI, PBO, BCB, silica, phosphorosilicate glass,
The combination of one or more of fluorine-containing glass, the material of the metal wiring layer include copper, aluminium, nickel, gold, silver, in titanium
One or more combination.
Optionally, the material of the seed layer includes one of Ti, TiN, Ta, TaN, the material of the metal feeder column
Including one of Au, Ag, Cu, Al.
Optionally, step 4) includes compression forming, transfer modling using the method that encapsulated layer encapsulates the metal feeder column
One of molding, fluid-tight molding, vacuum lamination and spin coating, the material of the encapsulated layer includes polyimides, silica gel and ring
One of oxygen resin.
Optionally, the metal coupling includes one of tin solder, silver solder and gold-tin eutectic solder.
Optionally, the antenna circuit chip includes one or both of driving component and passive component, wherein described
Driving component includes one of electric power management circuit, transmit circuit and reception circuit, and the passive component includes resistance, capacitor
And one of inductance.
Optionally, further include the steps that forming the second antenna structure between step 5) and step 6), comprising: a) in the day
Patterned second of sublayer is formed on line metal layer, is formed using the method for plating or chemical plating in second of sublayer
Second metal feeder column；B) the second metal feeder column is encapsulated using the second encapsulated layer, second encapsulated layer is thinned, so that
The top surface of the second metal feeder column is exposed to second encapsulated layer；C) the second antenna is formed on the second encapsulated layer of Yu Suoshu
Metal layer, the second antenna metal layer are connect with the second metal feeder column.
Optionally, it further comprises the steps of: and repeats step a)~step c) not less than twice, to form the of multiple-level stack
Two antenna structures.
Optionally, the radial width of the metal feeder column is between 100 microns~1000 microns.
As described above, the encapsulating structure and packaging method of antenna of the invention, have the advantages that
Antenna packages structure of the invention forms antenna metal feeder pillar by the way of plating or chemical plating, can obtain
The metal feeder column of major diameter improves the structural strength of metal feeder column, reduces process deviation, while can reduce feeder line damage
Consumption, improves the efficiency and performance of antenna.The present invention can obtain the antenna structure layer of multilayered structure, and stacked antenna structure has one
Fixed loss, and the present invention can substantially reduce the damage of stacked antenna structure using being relatively large in diameter, lower metal feeder column being lost
Consumption.
The present invention can obtain the metal feeder column of major diameter compared to routing (Wire Bonding) technique, and use
The mode of plating or chemical plating, can reduce manufacturing process difficulty, to reduce cost of manufacture, improve the producing efficiency of antenna.
The present invention uses fan-out package method encapsulating antenna structure, encapsulation volume can be effectively reduced, so that the envelope of antenna
Assembling structure integrated level with higher and better encapsulation performance, are with a wide range of applications in field of semiconductor package.
Detailed description of the invention
Fig. 1~Figure 17 is shown as the structural schematic diagram that each step of packaging method of antenna of the invention is presented, wherein figure
17 are shown as the structural schematic diagram of the encapsulating structure of antenna of the invention.
Component label instructions
101 support substrates
102 separating layers
201 first medium layers
202 first metal wiring layers
203 second dielectric layer
204 second metal wiring layers
301 seed layers
302 metal feeder columns
303 encapsulated layers
304 antenna metal layers
305 second of sublayer
306 second metal feeder columns
307 second encapsulated layers
308 second antenna metal layers
401 antenna circuit chips
501 metal couplings
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Please refer to Fig. 1~Figure 17.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, only shown in diagram then with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout kenel may also be increasingly complex.
As shown in Fig. 1~Figure 17, the present embodiment provides a kind of packaging method of antenna, the packaging method includes:
As shown in Figure 1, carrying out step 1) first, a support substrate 101 is provided, is formed and is divided in Yu Suoshu support substrate 101
Absciss layer 102.
As an example, the support substrate 101 include glass substrate, metal substrate, semiconductor substrate, polymer substrate and
One of ceramic substrate.In the present embodiment, it is glass substrate, the glass substrate cost that the support substrate 101, which is selected,
It is lower, it is easy to be formed on its surface separating layer 102, and the difficulty of subsequent stripping technology can be reduced.
As an example, the separating layer 102 includes photothermal transformation layer (LTHC), the support is formed in by spin coating proceeding
After in substrate 101, its curing molding is made by curing process.Photothermal transformation layer (LTHC) performance is stablized, and surface is more smooth, favorably
In the production of subsequent re-wiring layer, also, in subsequent stripping technology, the difficulty of removing is lower.
As shown in Fig. 2~Fig. 5, step 2) is then carried out, forms re-wiring layer in Yu Suoshu separating layer 102, it is described heavy
New route layer includes the first face connecting with the separating layer 102 and the second opposite face.
Step 2) make the re-wiring layer comprising steps of
As shown in Fig. 2, carrying out step 2-1), using chemical vapor deposition process or physical gas-phase deposition in described point
102 surface of absciss layer formed first medium layer 201, the material of the first medium layer 201 include epoxy resin, silica gel, PI, PBO,
BCB, silica, phosphorosilicate glass, the combination of one or more of fluorine-containing glass.
Preferably, the material selection of the first medium layer 201 is PI (polyimides), to further decrease technology difficulty
And process costs.
As shown in figure 3, carrying out step 2-2), the first gold medal is formed in 201 surface of first medium layer using sputtering technology
Belong to layer, and the metal layer is performed etching to form patterned first metal wiring layer 202.First metal wiring layer
202 material includes the combination of one or more of copper, aluminium, nickel, gold, silver, titanium.
As shown in figure 4, carrying out step 2-3), using chemical vapor deposition process or physical gas-phase deposition in the figure
202 surface of the first metal wiring layer of shape forms second dielectric layer 203, and performs etching shape to the second dielectric layer 203
At the second dielectric layer 203 with graphical through-hole.The material of the second dielectric layer 203 include epoxy resin, silica gel, PI,
PBO, BCB, silica, phosphorosilicate glass, the combination of one or more of fluorine-containing glass.
Preferably, the material selection of the second dielectric layer 203 is PI (polyimides), to further decrease technology difficulty
And process costs.
As shown in figure 4, carrying out step 2-4), in filling conductive plug in the graphical through-hole, then using sputtering work
Skill forms second metal layer in 203 surface of second dielectric layer, and performs etching to the metal layer and to form patterned the
Two metal wiring layers 204.The material of second metal wiring layer 204 includes one of copper, aluminium, nickel, gold, silver, titanium or two
Kind combination of the above.
Then, as shown in figure 5, above-mentioned steps 2-3 can be repeated)~step 2-4), there is multiple-level stack to be formed
The re-wiring layer of structure, to realize different wiring functions.
As shown in Fig. 6~Fig. 7, step 3) is then carried out, is formed on the second face of Yu Suoshu re-wiring layer patterned
Seed layer 301, using the method for plating or chemical plating in formation metal feeder column 302 in the seed layer 301, the metal feedback
Terminal 302 is electrically connected with the re-wiring layer.
The radial width of the metal feeder column 302 is between 100 microns~1000 microns, for example, the metal is presented
The radial width of terminal 302 can be 200 microns, 500 microns, 800 microns etc., and the present invention is by the way of plating or chemical plating
Antenna metal feeder pillar 302 is formed, the metal feeder column 302 of major diameter can be obtained, the structure for improving metal feeder column 302 is strong
Degree reduces process deviation, while can reduce feeder loss, improves the efficiency and performance of antenna.
The material of the seed layer 301 includes one of Ti, TiN, Ta, TaN, the material of the metal feeder column 302
Including one of Au, Ag, Cu, Al.For example, the seed layer 301 can be Ti, the metal feeder column 302 can be selected
For Cu, the seed layer 301 can effectively improve the plating of metal feeder column 302 or the efficiency of chemical plating and performance, while can
Effectively reinforce the bond strength of metal feeder column 302 and the re-wiring layer.
As shown in Fig. 8~Fig. 9, step 4) is then carried out, the metal feeder column 302 is encapsulated using encapsulated layer 303, is thinned
The encapsulated layer 303, so that the top surface of the metal feeder column 302 is exposed to the encapsulated layer 303.
As an example, using the method that encapsulated layer 303 encapsulates the antenna structure include compression forming, transfer modling at
One of type, fluid-tight molding, vacuum lamination and spin coating, the material of the encapsulated layer 303 include polyimides, silica gel and ring
One of oxygen resin.
As shown in Figure 10, step 5) is then carried out, Yu Suoshu dielectric layer surface forms antenna metal layer 304, the antenna
Metal layer 304 is connect with the metal feeder column 302.
Then, as shown in Figure 11~Figure 14, further include the steps that forming the second antenna structure, comprising:
As shown in figure 11, step a) is carried out, forms patterned second of sublayer 305 on Yu Suoshu antenna metal layer 304,
Using the method for plating or chemical plating in forming the second metal feeder column 306 in second of sublayer 305；
As shown in figure 12, step b) is carried out, the second metal feeder column 306 is encapsulated using the second encapsulated layer 307, is thinned
Second encapsulated layer 307, so that the top surface of the second metal feeder column 306 is exposed to second encapsulated layer 307；
As shown in figure 13, step c) is carried out, forms the second antenna metal layer 308 on the second encapsulated layer of Yu Suoshu 307, it is described
Second antenna metal layer 308 is connect with the second metal feeder column 306.
Finally, as shown in figure 14, step a)~step c) can also be repeated, to form the second antenna of multiple-level stack
Structure, for example, the duplicate number is not less than twice.
The present invention can obtain the antenna structure layer of multilayered structure, and stacked antenna structure has certain loss, and this hair
Bright use is relatively large in diameter, lower metal feeder column 302 is lost, and can substantially reduce the loss of stacked antenna structure.
As shown in figure 15, step 6) is then carried out, the encapsulated layer 303 and the branch are removed based on the separating layer 102
The first face of the re-wiring layer is exposed at support group bottom 101.
Specifically, the separating layer 102 includes photothermal transformation layer, uses photothermal transformation layer described in laser irradiation herein, with
Separate the photothermal transformation layer with the encapsulated layer 303 and the support substrate 101, so remove the re-wiring layer and
The support substrate 101.
As shown in figure 16, step 7) is then carried out, an antenna circuit chip 401 is provided, by the antenna circuit chip 401
It is engaged in the first face of the re-wiring layer, so that the antenna circuit chip 401 passes through the re-wiring layer and institute
It states metal feeder column 302 and the antenna metal layer 304 is electrically connected.For example, can be incited somebody to action by welding procedure or plant ball technique
The antenna circuit chip 401 is engaged in the first face of the re-wiring layer, so that the antenna circuit chip 401 and institute
State re-wiring layer electric connection.
For example, the antenna circuit chip 401 includes one or both of driving component and passive component, wherein described
Driving component includes one of electric power management circuit, transmit circuit and reception circuit, and the passive component includes resistance, capacitor
And one of inductance.
As shown in figure 17, step 8) is finally carried out, the first face of Yu Suoshu re-wiring layer forms metal coupling 501, with
Realize that the electrical of the re-wiring layer is drawn.
As shown in figure 17, the present invention provides a kind of encapsulating structure of antenna, and the encapsulating structure includes: re-wiring layer,
The re-wiring layer includes the first face and the second opposite face；Patterned seed layer 301, is formed in the rewiring
On second face of layer；Metal feeder column 302 is formed in the patterned seed layer 301 using the method for plating or chemical plating
On, the radial width of the metal feeder column 302 is between 100 microns~1000 microns；Encapsulated layer 303 coats the gold
Belong to feeder pillar 302, and its top surface appears the metal feeder column 302；Antenna metal layer 304 is formed in the encapsulated layer 303
On, the antenna metal layer 304 is connect with the metal feeder column 302；Antenna circuit chip 401 is incorporated into the cloth again
First face of line layer, and electrically by the re-wiring layer and the metal feeder column 302 and the antenna metal layer 304
Connection；And metal coupling 501, it is formed in the first face of the re-wiring layer, to realize the electrical property of the re-wiring layer
It draws.
The material of the seed layer 301 includes one of Ti, TiN, Ta, TaN, the material of the metal feeder column 302
Including one of Au, Ag, Cu, Al.
The encapsulating structure of the antenna further includes the second antenna structure, and second antenna structure includes: patterned
Two seed layers 305 are formed on the antenna metal layer 304；Second metal feeder column 306, using plating or the side of chemical plating
Method is formed in second of sublayer 305 and is formed；Second encapsulated layer 307 coats the second metal feeder column 306, and its
Top surface appears the second metal feeder column 306；Second antenna metal layer 308 is formed on second encapsulated layer 307, institute
The second antenna metal layer 308 is stated to connect with the second metal feeder column 306.In the present embodiment, second antenna structure
Not less than two, to form the second antenna structure of multiple-level stack.
The material of the encapsulated layer 303 includes one of polyimides, silica gel and epoxy resin.
The antenna circuit chip 401 includes one or both of driving component and passive component, wherein the active
Component includes one of electric power management circuit, transmit circuit and reception circuit, and the passive component includes resistance, capacitor and electricity
One of sense.
The metal coupling 501 includes one of tin solder, silver solder and gold-tin eutectic solder.
As described above, the encapsulating structure and packaging method of antenna of the invention, have the advantages that
Antenna packages structure of the invention forms antenna metal feeder pillar 302 by the way of plating or chemical plating, can be with
The metal feeder column 302 of major diameter is obtained, the structural strength of metal feeder column 302 is improved, reduces process deviation, while can subtract
Small feeder loss improves the efficiency and performance of antenna.The present invention can obtain the antenna structure layer of multilayered structure, stacked antenna knot
Structure has certain loss, and the present invention can substantially reduce multilayer using being relatively large in diameter, lower metal feeder column 302 being lost
The loss of antenna structure.
The present invention can obtain the metal feeder column 302 of major diameter, and adopt compared to routing (Wire Bonding) technique
With plating or the mode of chemical plating, manufacturing process difficulty can be reduced, to reduce cost of manufacture, improves the production effect of antenna
Rate.
The present invention uses fan-out package method encapsulating antenna structure, encapsulation volume can be effectively reduced, so that the envelope of antenna
Assembling structure integrated level with higher and better encapsulation performance, are with a wide range of applications in field of semiconductor package.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (20)
1. a kind of encapsulating structure of antenna, which is characterized in that the encapsulating structure includes:
Re-wiring layer, the re-wiring layer include the first face and the second opposite face；
Patterned seed layer is formed on the second face of the re-wiring layer；
Metal feeder column is formed in the patterned seed layer, the metal feeder using the method for plating or chemical plating
The radial width of column is between 100 microns~1000 microns；
Encapsulated layer coats the metal feeder column, and its top surface appears the metal feeder column；
Antenna metal layer is formed on the encapsulated layer, and the antenna metal layer is connect with the metal feeder column；
Antenna circuit chip is incorporated into the first face of the re-wiring layer, and passes through the re-wiring layer and the gold
Belong to feeder pillar and the antenna metal layer is electrically connected；And
Metal coupling is formed in the first face of the re-wiring layer, to realize that the electrical of the re-wiring layer is drawn.
2. the encapsulating structure of antenna according to claim 1, it is characterised in that: the material of the seed layer include Ti,
The material of one of TiN, Ta, TaN, the metal feeder column include one of Au, Ag, Cu, Al.
3. the encapsulating structure of antenna according to claim 1, which is characterized in that it further include the second antenna structure, described
Two antenna structures include:
Patterned second of sublayer is formed on the antenna metal layer；
Second metal feeder column is formed in second of sublayer using the method for plating or chemical plating and is formed；
Second encapsulated layer coats the second metal feeder column, and its top surface appears the second metal feeder column；
Second antenna metal layer is formed on second encapsulated layer, and the second antenna metal layer and second metal are presented
Terminal connection.
4. the encapsulating structure of antenna according to claim 3, it is characterised in that: second antenna structure is not less than two
It is a, to form the second antenna structure of multiple-level stack.
5. the encapsulating structure of antenna according to claim 1, it is characterised in that: the material of the encapsulated layer includes polyamides Asia
One of amine, silica gel and epoxy resin.
6. the encapsulating structure of antenna described in claim 1, it is characterised in that: the antenna circuit chip include driving component and
One or both of passive component, wherein the driving component includes electric power management circuit, transmit circuit and receives in circuit
One kind, the passive component includes one of resistance, capacitor and inductance.
7. the encapsulating structure of antenna according to claim 1, it is characterised in that: the metal coupling includes tin solder, silver
One of solder and gold-tin eutectic solder.
8. a kind of packaging method of antenna, which is characterized in that the packaging method comprising steps of
1) support substrate is provided, forms separating layer in Yu Suoshu support substrate；
2) re-wiring layer is formed in Yu Suoshu separating layer, the re-wiring layer includes the first face connecting with the separating layer
And the second opposite face；
3) patterned seed layer is formed on the second face of Yu Suoshu re-wiring layer, using the method for plating or chemical plating in institute
State formation metal feeder column in seed layer；
4) the metal feeder column is encapsulated using encapsulated layer, the encapsulated layer is thinned, so that the top surface of the metal feeder column is revealed
For the encapsulated layer；
5) antenna metal layer is formed on Yu Suoshu encapsulated layer, the antenna metal layer is connect with the metal feeder column；
6) re-wiring layer and the support substrate are removed based on the separating layer, exposes the first of the re-wiring layer
Face；
7) an antenna circuit chip is provided, the antenna circuit chip is engaged in the first face of the re-wiring layer, so that
The antenna circuit chip is electrically connected by the re-wiring layer and the metal feeder column and the antenna metal layer；
And
8) the first face of Yu Suoshu re-wiring layer forms metal coupling, to realize that the electrical of the re-wiring layer is drawn.
9. the packaging method of antenna according to claim 8, it is characterised in that: the support substrate include glass substrate,
One of metal substrate, semiconductor substrate, polymer substrate and ceramic substrate.
10. the packaging method of antenna according to claim 8, it is characterised in that: the separating layer includes photothermal transformation layer,
Step 6) is using photothermal transformation layer described in laser irradiation, so that the photothermal transformation layer and the encapsulated layer and the support substrate
Separation, and then remove the re-wiring layer and the support substrate.
11. the packaging method of antenna according to claim 8, it is characterised in that: step 2) makes the re-wiring layer
Comprising steps of
2-1) first medium layer is formed in the separation layer surface；
The first metal layer 2-2) is formed in the first medium layer surface using sputtering technology, and the metal layer is performed etching
Form patterned first metal wiring layer；
Second dielectric layer 2-3) is formed in the patterned first metal line layer surface, and the second dielectric layer is carried out
Etching forms the second dielectric layer with graphical through-hole；
2-4) in filling conductive plug in the graphical through-hole, then using sputtering technology in the second medium layer surface shape
It performs etching to form patterned second metal wiring layer at second metal layer, and to the metal layer.
12. the packaging method of antenna according to claim 11, it is characterised in that: further comprise the steps of: and repeat step
2-3)~step 2-4), to form the re-wiring layer with multilayer lamination structure.
13. the packaging method of antenna according to claim 11, it is characterised in that: the material of the dielectric layer includes epoxy
Resin, silica gel, PI, PBO, BCB, silica, phosphorosilicate glass, the combination of one or more of fluorine-containing glass, the metal
The material of wiring layer includes the combination of one or more of copper, aluminium, nickel, gold, silver, titanium.
14. the packaging method of antenna according to claim 8, it is characterised in that: the material of the seed layer include Ti,
The material of one of TiN, Ta, TaN, the metal feeder column include one of Au, Ag, Cu, Al.
15. the packaging method of antenna according to claim 8, it is characterised in that: step 4) is using described in encapsulated layer encapsulation
The method of metal feeder column includes one of compression forming, Transfer molding, fluid-tight molding, vacuum lamination and spin coating, institute
The material for stating encapsulated layer includes one of polyimides, silica gel and epoxy resin.
16. the packaging method of antenna according to claim 8, it is characterised in that: the metal coupling includes tin solder, silver
One of solder and gold-tin eutectic solder.
17. the packaging method of antenna according to claim 8, it is characterised in that: the antenna circuit chip includes actively
One or both of component and passive component, wherein the driving component includes electric power management circuit, transmit circuit and reception
One of circuit, the passive component include one of resistance, capacitor and inductance.
18. the packaging method of antenna according to claim 8, it is characterised in that: further include between step 5) and step 6)
The step of forming the second antenna structure, comprising:
A) patterned second of sublayer is formed on Yu Suoshu antenna metal layer, using the method for plating or chemical plating in described the
The second metal feeder column is formed in two seed layers；
B) the second metal feeder column is encapsulated using the second encapsulated layer, second encapsulated layer is thinned, so that second gold medal
The top surface for belonging to feeder pillar is exposed to second encapsulated layer；
C) the second antenna metal layer is formed on the second encapsulated layer of Yu Suoshu, the second antenna metal layer and second metal are presented
Terminal connection.
19. the packaging method of antenna according to claim 18, it is characterised in that: further comprise the steps of: and repeat step
A)~step c) is not less than twice, to form the second antenna structure of multiple-level stack.
20. the packaging method of antenna according to claim 8, it is characterised in that: the radial width of the metal feeder column
Between 100 microns~1000 microns.
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| CN201910120903.6A CN109742056A (en) | 2019-02-18 | 2019-02-18 | The encapsulating structure and packaging method of antenna |
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