CN109735814B - Cooling assembly of magnetron sputtering reaction chamber and magnetron sputtering equipment thereof - Google Patents
Cooling assembly of magnetron sputtering reaction chamber and magnetron sputtering equipment thereof Download PDFInfo
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- CN109735814B CN109735814B CN201910062064.7A CN201910062064A CN109735814B CN 109735814 B CN109735814 B CN 109735814B CN 201910062064 A CN201910062064 A CN 201910062064A CN 109735814 B CN109735814 B CN 109735814B
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- 238000001816 cooling Methods 0.000 title claims abstract description 46
- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 33
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 49
- 239000000498 cooling water Substances 0.000 claims abstract description 21
- 238000004891 communication Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 16
- 230000008569 process Effects 0.000 abstract description 14
- 239000000758 substrate Substances 0.000 abstract description 12
- 238000007789 sealing Methods 0.000 abstract description 8
- 238000004140 cleaning Methods 0.000 abstract description 7
- 238000012546 transfer Methods 0.000 abstract description 5
- 238000012545 processing Methods 0.000 abstract description 4
- 230000001965 increasing effect Effects 0.000 description 9
- 239000002184 metal Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 239000013077 target material Substances 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910021645 metal ion Inorganic materials 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003723 Smelting Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000027455 binding Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
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- Physical Vapour Deposition (AREA)
Abstract
The embodiment of the invention discloses a cooling component of a magnetron sputtering reaction chamber and magnetron sputtering equipment thereof, wherein the component comprises: an adapter; the adapter is configured to shield the bottom and sidewalls of the liner for securing the liner within the reaction chamber; the side wall of the adapter and the side wall of the lining are provided with preset gaps, the bottom of the adapter is contacted with the bottom of the lining, and the adapter is provided with a cooling water channel for cooling the side wall and the bottom of the lining. The cooling component and the magnetron sputtering equipment thereof can increase the thermal contact area and the heat transfer efficiency of the adapter and the side wall of the lining; the temperature of the reaction area of the process is stabilized by cooling the side wall and the bottom surface of the lining, so that the influence of the temperature rise of the reaction area on the substrate and the film is avoided; the water channel processing steps and difficulty are reduced, and the cleaning difficulty is reduced; the sealing ring is not required to seal the waterway, so that the risk of water leakage can be reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a cooling assembly of a magnetron sputtering reaction chamber and magnetron sputtering equipment thereof.
Background
Physical vapor deposition (Physical Vapor Deposition, PVD) techniques are widely used in the semiconductor field, which employ Sputtering (Sputtering) deposition techniques, in which inert gases such as argon are introduced between a substrate and a target, the inert gases are ionized by a high voltage to generate a plasma, the generated plasma bombards the target by enhancing the ability of electrons to be bound by a magnetic field, and atoms or ions of the target are deposited on the substrate to form a thin film. The existing magnetron sputtering equipment is shown in fig. 1, the equipment is provided with a reaction chamber 1, a target material 2 is arranged in the reaction chamber 1, an insulating material 3 is arranged above the target material 2 for realizing the insulation of the target material, and water cooling can be added between the material and the target material 2 for cooling the target material. During the sputtering process, a power supply applies bias voltage to the target 2, so that the target 2 becomes negative pressure relative to a grounded cavity, inert gas is introduced in a vacuum environment to discharge the target to ionize the target into plasma, and the negative bias voltage can attract positively charged plasma to the target 2.
When the energy of the plasma is high enough and the target 2 is bombarded under the action of a magnetic field formed by the rotating magnetron 4, metal atoms or metal ions can escape from the surface of the target and are deposited on the wafer 6 through diffusion, the reference numeral 5 is a base for bearing the substrate 6, but even though the magnetron 4 has the binding action on the metal atoms, a large amount of metal atoms and metal ions can still be deposited on the inner wall of the reaction chamber 1 and pollute the substrate and the reaction chamber 1 after falling, in view of the difficulty in cleaning the reaction chamber, a lining (Shield) 9, a Cover ring (Cover ring) 8 and a deposition ring (Dep-ring) 7 are arranged for shielding the metal atoms and the metal ions polluting the reaction chamber, the metal films of the inner liner (Shield) 9, the Cover ring (Cover ring) 8 and the deposition ring (Dep-ring) 7 are prevented from falling off by increasing the surface roughness, regular cleaning, sand blasting and meltallizing are needed, the inner liner (Shield) 9, the Cover ring (8) and the deposition ring (Dep-ring) 7 are fixed on the reaction chamber 1 by using the adapter10, and in the magnetron sputtering process, huge heat is carried by escaping metal ions and atoms, so that the temperature of the inner wall of the reaction chamber 1 is increased, and especially the temperature of the inner liner (Shield) 9, the Cover ring (8) and the deposition ring (Dep-ring) 7 exceeds the temperature range of the process reaction, the process is not facilitated, and a series of problems such as substandard film stress, whisker defects and the like appear. At present, the inner liner 9 and the like are subjected to cooling and other treatments by adopting various modes, but the problems of limited cooling capacity, low heat conduction rate, low efficiency, high cost, high processing difficulty and the like exist, and the quality of the film is affected.
Disclosure of Invention
In view of the above, the embodiment of the invention provides a cooling assembly of a magnetron sputtering reaction chamber and a magnetron sputtering device thereof.
According to an aspect of an embodiment of the present invention, there is provided a cooling assembly of a magnetron sputtering reaction chamber, including: an adapter; the adapter is configured to shield the bottom and sidewalls of the liner for securing the liner within the reaction chamber; the side wall of the adapter and the side wall of the lining are provided with preset gaps, the bottom of the adapter is in contact with the bottom of the lining, and the adapter is provided with a cooling water channel for cooling the side wall and the bottom of the lining.
Optionally, the cooling water channel is provided inside a side wall of the adapter and inside a bottom of the adapter.
Optionally, the adapter is a cylindrical structure with two open ends; the inner side of the side wall of the adapter is in clearance fit with the outer wall of the liner; the bottom of the adapter is provided with a support portion, and the bottom of the liner is in contact with the support portion.
Optionally, the cooling water channel includes: a first waterway and a second waterway; the first water channel is arranged inside the side wall of the adapter, the second water channel is arranged inside the supporting part, and the first water channel is communicated with the second water channel.
Optionally, the first waterway includes: a water outlet channel and a water return channel; the water outlet of the water outlet channel and the water return opening of the water return channel are arranged on the outer side of the side wall of the adapter.
Optionally, the water outlet channel and the water return channel are inclined channels inclined towards the top of the adapter, and the water outlet channel and the water return channel are respectively communicated with the second channel.
Optionally, the cooling water channel includes: a third waterway; the third water channel is arranged inside the side wall of the adapter and is used for communicating the water outlet channel with the second water channel and communicating the backwater channel with the second water channel.
Optionally, the second water channel is an annular water channel arranged inside the supporting part; joints are arranged at the water outlet of the water outlet channel and the water return opening of the water return channel.
Optionally, the first waterway further includes a portion surrounding a sidewall of the adapter, the portion surrounding the sidewall of the adapter in communication with the effluent waterway and the return waterway, respectively.
According to another aspect of an embodiment of the present invention, there is provided a magnetron sputtering apparatus including: a cooling assembly for a magnetron sputtering reaction chamber as described above.
According to the cooling component of the magnetron sputtering reaction chamber and the magnetron sputtering equipment thereof, the adapter is arranged to shield the bottom and the side wall of the lining, so that the bottom surface of the lining is attached to the adapter, and the thermal contact area can be increased; a preset gap is arranged between the side wall of the adapter and the side wall of the lining, so that the heat transfer efficiency of the adapter and the side wall of the lining is improved; the temperature of the reaction area of the process is stabilized by cooling the side wall and the bottom surface of the lining, so that the heat conduction of the lining around the substrate is effectively increased, the temperature rise phenomenon of the substrate caused by magnetron sputtering is reduced, the influence of the temperature rise of the reaction area on the substrate and the film is avoided, the release of impurities of the lining due to high temperature is effectively avoided, and the product quality is improved; the cooling water channel is arranged in the adapter, so that the processing steps and the difficulty are reduced, the cleaning difficulty is reduced, and the disassembly and assembly difficulty caused by adding the waterway process assembly is reduced; simple structure, cooling efficiency is high, need not the sealing washer to the sealing of water route, has reduced the risk of leaking.
Additional aspects and advantages of embodiments of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
For a clearer description of embodiments of the invention or of solutions in the prior art, the following description of the drawings which are required to be used in the embodiments or in the prior art will be given in brief, it being obvious that the drawings in the following description are only some embodiments of the invention, and that, without inventive faculty, other drawings can be obtained from them to those skilled in the art:
FIG. 1 is a schematic diagram of a magnetron sputtering apparatus of the prior art;
FIG. 2 is a schematic diagram of a cooling assembly of a magnetron sputtering reaction chamber according to the present invention;
FIG. 3 is a schematic view of an adapter of a cooling assembly of a magnetron sputtering reaction chamber according to the present invention;
FIG. 4 is a schematic view of a cooling water channel of a cooling assembly of a magnetron sputtering reaction chamber according to the present invention;
FIG. 5 is a schematic view of another cooling water channel of a cooling assembly of a magnetron sputtering reaction chamber according to the present invention.
Detailed Description
The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention. The technical scheme of the present invention is described in various aspects below with reference to the drawings and the embodiments.
Hereinafter, for convenience of description, the terms "left", "right", "upper", "lower" and "upper" are used in accordance with the left, right, upper and lower directions of the drawings themselves. The following "first", "second", etc. are used merely to describe differences and are not otherwise specifically meant.
As shown in fig. 2 to 5, the present invention provides a cooling assembly of a magnetron sputtering reaction chamber, including an adapter 20. The adapter 20 is configured to conceal the bottom and sidewalls of the liner 19 and to receive the liner 19 therein for securing the liner 19 within the reaction chamber, the adapter 20 being fixedly coupled to the liner 19, including threaded connections, etc., such as screws used to secure the liner 19 to the adapter 20. Both the adapter 20 and the liner 19 are metal.
The adapter 20 may have a variety of configurations and the cooling water passage may be provided in a variety of ways. A cooling water channel is provided at the side wall of the adapter 20 and the bottom of the adapter 20, with a preset gap between the side wall of the adapter 20 and the side wall of the liner 19. Considering the problems of thermal expansion at high temperature and deformation of the liner 19, in order to ensure the accuracy of the liner 19, a small gap 204 may be provided between the liner 19 and the upper surface of the adapter 20, for example, the gap may be 0.05-0.2mm, thereby leaving an adjustment margin for expansion or contraction deformation after temperature change. The bottom of the adapter 20 is in contact with the bottom of the liner 19. The adapter 20 may cool the side walls, bottom of the liner 19. The cooling water passage may be provided in various manners, for example, a cooling water passage may be provided in the inside of the side wall of the adapter 20 and the inside of the bottom of the adapter 20.
In one embodiment, the adapter 20 is a cylindrical structure with two open ends, and the inner side of the side wall 212 of the adapter 20 is in clearance fit with the outer wall of the liner 19, and the smaller the clearance, the better the liner 19 can be smoothly loaded into the adapter 20. The bottom of the adapter 20 is provided with a support 205, and the bottom of the liner 19 is in contact with the support 205. The supporting portion 205 is annular, and the thickness of the supporting portion 205 is not too large to facilitate heat transfer, and the inner diameter of the supporting portion 205 is not smaller than the inner diameter of the liner 19 to facilitate lifting of the substrate. After the liner 19 is put into the adapter 20, the liner is supported in the vertical direction by the support portion 205, and is positioned with the outer wall of the liner 19 by the side wall 212 of the adapter 20, so that the liner and the liner are coaxially arranged.
The support portion 205 of the adapter 20 is added to support the liner 19, and the bottom surface of the liner 19 closely fits the support portion 205 by the action of gravity. A water channel is added to the support 205, and the temperature of the bottom surface of the liner 19 is lowered by thermal contact heat transfer. The side wall 212 of the adapter 20 is a clearance fit with the side wall of the liner 19, which gap meets the installation conditions. The side wall 212 of the adapter 20 is provided with a cooling water channel, so that the heat conduction efficiency of the adapter 20 and the side wall of the liner 19 is increased, and the side wall of the liner 19 is cooled. The temperature of the process reaction zone is stabilized by cooling the side walls and bottom surface of liner 19.
In one embodiment, the structure of the adapter 20 is divided into two parts, i.e., the inside of the reaction chamber and the outside of the reaction chamber, and the structure of the adapter 20 outside the reaction chamber may be square chamfer structure. The cooling water channel 202 includes: first waterway 207,207', second waterway 208. A first waterway 207,207' is provided inside the side wall 212 of the adapter for the inflow and return of water.
The second water channel 208 may be disposed inside the support portion 205 (not shown), or may be disposed at a position near the support portion 205 at the bottom of the side wall 212 of the adapter, as shown in fig. 2 and 3, to cool the bottom of the liner 19 by heat conduction of the support portion 205, and the first water channels 207,207' and the second water channel 208 are communicated. The first water channels 207,207 'may be a water outlet channel 207 and a water return channel 207', respectively, both of the water outlet channel and the water return mouth of the water return channel being arranged outside the side wall 212 of the adapter 20. The joints 213 are arranged at the water outlet of the water outlet channel and the water return opening of the water return channel, and the joints 213 can be connected and sealed by adopting a welding connection mode and the like and arranging sealing rings.
The cooling water channel 202 may also include a third water channel 209, the third water channel 209 being disposed inside a sidewall 212 of the adapter, the third water channel 209 being configured to communicate with the effluent water channel 207 and the second water channel 208, and communicate with the return water channel 207' and the second water channel 208. The second waterway 208 may be an annular waterway provided inside the supporting portion 205.
A third water channel 209 may be provided on the annular second water channel 208 to connect the first water channels 207,207', or the third water channel 209 may not be provided, and may be directly connected to the second water channel 208 through the first water channels 207, 207'. The water outlet channel 207 and the water return channel 207 'may be inclined channels inclined to the top of the adaptor, i.e., the water outlet channel 207 and the water return channel 207' are inclined upward from left to right with respect to the horizontal form shown in fig. 3, thereby increasing the cooling effect of the channels on the upper side of the closed area. The water outlet channel and the water return channel are respectively communicated with the second water channel 208.
The second water channel 208 may be formed by various methods, for example, a groove-shaped annular water channel may be formed on the support portion 205, and the groove-shaped annular water channel may be sealed by welding with the welding block 214 to form the annular second water channel 208. The welding mode is stable and reliable, and water leakage can not occur.
The first waterway 207,207 'may further include a portion (not shown) surrounding a sidewall of the adapter 20, the portion surrounding the sidewall of the adapter 20 communicating with the outlet waterway 207 and the return waterway 207', respectively. By adding portions around the side walls of the adapter 20, the cooling effect is increased. The arrangement of the cooling water channel 202 in the adapter 20 is not limited to the above embodiment, and may be different according to the requirement of the cooling portion, and will not be described herein.
In one embodiment, the present invention provides a magnetron sputtering apparatus comprising a cooling assembly of the magnetron sputtering reaction chamber of any of the embodiments above. A seal ring 210 is provided between the lower mounting surface of the adapter 20 and the mounting surface of the reaction chamber 11, and between the upper mounting surface of the adapter 20 and the mounting surface of the insulating block 211. A cover plate 18 is provided on the liner 19. The two sealing rings 210 respectively seal the upper surface of the adapter 20 with the insulating block 211 and the lower surface of the adapter 20 with the reaction chamber 11, thereby sealing the process components.
In the cooling assembly of the magnetron sputtering reaction chamber and the magnetron sputtering device thereof in the embodiment, the adapter is arranged to shield the bottom and the side wall of the liner, and preferably, a supporting part is added at the bottom of the adapter which does not need cleaning and is used for supporting the liner, so that the bottom surface of the liner is attached to the adapter, and the thermal contact area can be increased; a preset gap is arranged between the side wall of the adapter and the side wall of the lining, so that the heat transfer efficiency of the adapter and the side wall of the lining is improved; the temperature of the reaction area of the process is stabilized by cooling the side wall and the bottom surface of the lining, so that the heat conduction of the lining around the substrate is effectively increased, the temperature rise phenomenon of the substrate caused by magnetron sputtering is reduced, the influence of the temperature rise of the reaction area on the substrate and the film is avoided, the release of impurities of the lining due to high temperature is effectively avoided, and the product quality is improved; the cooling water channel is arranged in the adapter, so that the processing steps and the difficulty are reduced, the cleaning difficulty is reduced, the process problem caused by the non-ideal cleaning sand blasting and smelting ejection effect caused by protecting the water channel is avoided, and the disassembly and assembly difficulty caused by adding the water channel process component is also reduced; simple structure, cooling efficiency is high, need not the sealing washer to the sealing of water route, has reduced the risk of leaking.
Any of the above-described embodiments of the present invention disclosed herein, unless otherwise stated, if they disclose a numerical range, then the disclosed numerical range is the preferred numerical range, as will be appreciated by those of skill in the art: the preferred numerical ranges are merely those of the many possible numerical values where technical effects are more pronounced or representative. Since the numerical values are more and cannot be exhausted, only a part of the numerical values are disclosed to illustrate the technical scheme of the invention, and the numerical values listed above should not limit the protection scope of the invention.
Meanwhile, if the above invention discloses or relates to parts or structural members fixedly connected with each other, the fixed connection may be understood as follows unless otherwise stated: detachably fixed connection (e.g. using bolts or screws) can also be understood as: the non-detachable fixed connection (e.g. riveting, welding), of course, the mutual fixed connection may also be replaced by an integral structure (e.g. integrally formed using a casting process) (except for obviously being unable to use an integral forming process).
In addition, terms used in any of the above-described aspects of the present disclosure to express positional relationship or shape have meanings including a state or shape similar to, similar to or approaching thereto unless otherwise stated. Any part provided by the invention can be assembled by a plurality of independent components, or can be manufactured by an integral forming process.
The above embodiments are only for illustrating the technical solution of the present invention and not for limiting the same; while the invention has been described in detail with reference to the preferred embodiments, those skilled in the art will appreciate that: modifications may be made to the specific embodiments of the present invention or equivalents may be substituted for part of the technical features thereof; without departing from the spirit of the invention, it is intended to cover the scope of the invention as claimed.
The description of the present invention has been presented for purposes of illustration and description, and is not intended to be exhaustive or limited to the invention in the form disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, and to enable others of ordinary skill in the art to understand the invention for various embodiments with various modifications as are suited to the particular use contemplated.
Claims (10)
1. A cooling assembly for a magnetron sputtering reaction chamber, comprising:
an adapter; the adapter is configured to shield the bottom and sidewalls of the liner for securing the liner within the reaction chamber; a preset gap is reserved between the side wall of the adapter and the side wall of the lining, the bottom of the adapter is in contact with the bottom of the lining, and the adapter is provided with a cooling water channel for cooling the side wall and the bottom of the lining;
the adapter is a cylindrical structure with two open ends, a supporting part for supporting the bottom of the lining is arranged at the bottom of the adapter, and one end, far away from the supporting part, of the adapter is used for being fixedly connected with the reaction chamber.
2. The cooling assembly of claim 1, wherein the cooling assembly comprises a cooling assembly,
the cooling water channel is provided inside a side wall of the adapter and inside a bottom of the adapter.
3. A cooling assembly according to claim 2, wherein,
the inner side of the side wall of the adapter is in clearance fit with the outer wall of the liner.
4. A cooling assembly according to claim 3, wherein,
the cooling water channel comprises: a first waterway and a second waterway; the first water channel is arranged inside the side wall of the adapter, the second water channel is arranged inside the supporting part, and the first water channel is communicated with the second water channel.
5. The cooling assembly of claim 4, wherein the cooling assembly comprises a cooling assembly,
the first waterway includes: a water outlet channel and a water return channel; the water outlet of the water outlet channel and the water return opening of the water return channel are arranged on the outer side of the side wall of the adapter.
6. A cooling assembly according to claim 5, wherein,
the water outlet channel and the water return channel are inclined channels inclined towards the top of the adapter, and are respectively communicated with the second channel.
7. A cooling assembly according to claim 5, wherein,
the cooling water channel comprises: a third waterway; the third water channel is arranged inside the side wall of the adapter and is used for communicating the water outlet channel with the second water channel and communicating the backwater channel with the second water channel.
8. A cooling assembly according to claim 5, wherein,
the second water channel is an annular water channel arranged in the supporting part; joints are arranged at the water outlet of the water outlet channel and the water return opening of the water return channel.
9. A cooling assembly according to claim 5, wherein,
the first waterway further includes a portion surrounding a sidewall of the adapter, the portion surrounding the sidewall of the adapter in communication with the effluent waterway and the return waterway, respectively.
10. A magnetron sputtering apparatus, characterized by comprising:
a cooling assembly for a magnetron sputtering reaction chamber according to any of claims 1 to 9.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910062064.7A CN109735814B (en) | 2019-01-23 | 2019-01-23 | Cooling assembly of magnetron sputtering reaction chamber and magnetron sputtering equipment thereof |
| TW109101255A TWI765213B (en) | 2019-01-23 | 2020-01-14 | Lined cooling components, reaction chambers and semiconductor processing equipment |
| JP2021542550A JP2022518518A (en) | 2019-01-23 | 2020-01-15 | Shielded cooling assembly, reaction chamber, and semiconductor processing equipment |
| KR1020217023726A KR102641209B1 (en) | 2019-01-23 | 2020-01-15 | Lining cooling assemblies, reaction chambers and semiconductor processing devices |
| PCT/CN2020/072184 WO2020151542A1 (en) | 2019-01-23 | 2020-01-15 | Liner cooling assembly, reaction chamber, and semiconductor processing apparatus |
| US17/384,240 US20210351016A1 (en) | 2019-01-23 | 2021-07-23 | Shield cooling assembly, reaction chamber and semiconductor processing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910062064.7A CN109735814B (en) | 2019-01-23 | 2019-01-23 | Cooling assembly of magnetron sputtering reaction chamber and magnetron sputtering equipment thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109735814A CN109735814A (en) | 2019-05-10 |
| CN109735814B true CN109735814B (en) | 2023-12-22 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201910062064.7A Active CN109735814B (en) | 2019-01-23 | 2019-01-23 | Cooling assembly of magnetron sputtering reaction chamber and magnetron sputtering equipment thereof |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI765213B (en) * | 2019-01-23 | 2022-05-21 | 大陸商北京北方華創微電子裝備有限公司 | Lined cooling components, reaction chambers and semiconductor processing equipment |
| CN112981349B (en) * | 2021-02-19 | 2022-12-06 | 上海悦匠实业有限公司 | Low-temperature deep hole bias sputtering device |
| CN115181947A (en) * | 2022-06-21 | 2022-10-14 | 无锡尚积半导体科技有限公司 | Shielding piece cooling adapter in magnetron sputtering equipment and magnetron sputtering equipment |
| CN114875362A (en) * | 2022-07-11 | 2022-08-09 | 上海陛通半导体能源科技股份有限公司 | Physical vapor deposition equipment for accelerating cooling of cavity |
| CN117051367B (en) * | 2023-08-18 | 2024-05-31 | 上海陛通半导体能源科技股份有限公司 | Magnetron sputtering equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002356771A (en) * | 2001-03-30 | 2002-12-13 | Anelva Corp | Sputtering device |
| CN102586737A (en) * | 2012-03-09 | 2012-07-18 | 上海先进半导体制造股份有限公司 | Physical vapor deposition method of aluminum-copper film |
| CN209890728U (en) * | 2019-01-23 | 2020-01-03 | 北京北方华创微电子装备有限公司 | Cooling assembly of magnetron sputtering reaction chamber and magnetron sputtering equipment thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7981262B2 (en) * | 2007-01-29 | 2011-07-19 | Applied Materials, Inc. | Process kit for substrate processing chamber |
| WO2018094024A1 (en) * | 2016-11-19 | 2018-05-24 | Applied Materials, Inc. | Process kit having a floating shadow ring |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002356771A (en) * | 2001-03-30 | 2002-12-13 | Anelva Corp | Sputtering device |
| CN102586737A (en) * | 2012-03-09 | 2012-07-18 | 上海先进半导体制造股份有限公司 | Physical vapor deposition method of aluminum-copper film |
| CN209890728U (en) * | 2019-01-23 | 2020-01-03 | 北京北方华创微电子装备有限公司 | Cooling assembly of magnetron sputtering reaction chamber and magnetron sputtering equipment thereof |
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