CN109708753A - A kind of four-quadrant GaAs sun sensor component and preparation method thereof - Google Patents
A kind of four-quadrant GaAs sun sensor component and preparation method thereof Download PDFInfo
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- CN109708753A CN109708753A CN201910132737.1A CN201910132737A CN109708753A CN 109708753 A CN109708753 A CN 109708753A CN 201910132737 A CN201910132737 A CN 201910132737A CN 109708753 A CN109708753 A CN 109708753A
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- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 237
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract description 73
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000002955 isolation Methods 0.000 claims abstract description 4
- 239000006059 cover glass Substances 0.000 claims description 42
- 239000003292 glue Substances 0.000 claims description 31
- 229910052732 germanium Inorganic materials 0.000 claims description 26
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 26
- 239000004020 conductor Substances 0.000 claims description 15
- 239000006117 anti-reflective coating Substances 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 208000007578 phototoxic dermatitis Diseases 0.000 claims 1
- 238000009738 saturating Methods 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract description 8
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 19
- 238000010586 diagram Methods 0.000 description 16
- 238000005259 measurement Methods 0.000 description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 238000005538 encapsulation Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000005622 photoelectricity Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
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- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
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- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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Abstract
The embodiment of the invention discloses a kind of four-quadrant GaAs sun sensor components and preparation method thereof, four-quadrant unijunction gallium arsenide photoelectric pond is prepared by the method for corrosion isolation, so that sun sensor has wider operating temperature range and excellent resistance to space radiation, it can be used for micro-nano satellite posture control system, have many advantages, such as that small in size, light weight, precision are high.In addition, photocell provided in an embodiment of the present invention, which is fixedly connected by pedestal with printed circuit board, realizes photronic overall package, without separately setting encapsulating structure, to simplify the structure of sun sensor.
Description
Technical field
The present embodiments relate to space technology field more particularly to a kind of four-quadrants for micro-nano satellite posture control system
GaAs sun sensor component and preparation method thereof.
Background technique
Micro-nano satellite has become the most popular research direction of business space industry at present, and micro-nano satellite has light weight, body
The features such as product is small, the lead time is short.And posture control system is the very important subsystem of satellite, sun sensor and star sensor are
Most common attitude control positioning method.But star sensor is with high costs, and quality and volume are relatively large, while power consumption is also higher.Too
Positive sensor is a kind of common photoelectricity attitude control sensor, determines solar vector in celestial body by the orientation of sensitive solar vector
Orientation in coordinate, so that optical attitude of the spacecraft relative to solar azimuth information is obtained, to realize the posture to spacecraft
Control, and the solar array of spacecraft is positioned.
Currently, the composition of sun sensor mainly includes optical head, Sensor section and signal processing.Wherein,
Optical head obtains attitude angle information of the celestial body with respect to the sun using photoelectric converting function in real time, and the usual optical head is realized
The device of photoelectric converting function is silicon based opto-electronics pond.With the development of communication technologies, the attitude measurement accuracy of spacecraft is proposed
Increasingly higher demands, and the silicon based opto-electronics pond measurement accuracy of existing sun sensor is low, operating temperature range is narrow, resistance to sky
Between irradiation behaviour it is poor, be unable to satisfy current micro-nano satellite attitude control requirement.
Summary of the invention
For above-mentioned there are problem, the embodiment of the present invention provides a kind of four-quadrant GaAs sun sensor component and its system
Preparation Method, is able to solve in the prior art that sun sensor measurement accuracy is low, operating temperature range is narrow, resistance to space radiation performance is poor
The technical issues of.
In a first aspect, the embodiment of the invention provides a kind of four-quadrant GaAs sun sensor components, comprising: four-quadrant
Unijunction gallium arsenide cells, cover glass, printed circuit board and pedestal；
The four-quadrant unijunction gallium arsenide cells include sensitive area, and the four-quadrant unijunction gallium arsenide cells further include light
Face and shady face away from the light-receiving surface, the light-receiving surface and the shady face are provided at least one contact conductor；
The cover glass is located at the light-receiving surface side of the four-quadrant unijunction gallium arsenide cells, and the cover glass covers
Cover the light-receiving surface of the four-quadrant unijunction gallium arsenide cells；
The printed circuit board is located at the shady face side of the four-quadrant unijunction gallium arsenide cells, the printed circuit board
It is provided with pad, a contact conductor is corresponding with a pad to be electrically connected, and the printed circuit board is additionally provided with solid
Determine screw hole；
The pedestal is located at the side that the cover glass deviates from the four-quadrant unijunction gallium arsenide cells, and the pedestal
The four-quadrant unijunction gallium arsenide cells are also wrapped up, and are fixedly connected by screw with the fixing threaded hole of the printed circuit board,
The side towards the light-receiving surface of the pedestal is provided with open area, and the open area covers the four-quadrant unijunction arsenic
Change the sensitive area of gallium battery.
Optionally, the four-quadrant unijunction gallium arsenide cells include:
N-shaped germanium substrate；
And the N-shaped germanium substrate is deposited on outside the gallium arsenide epitaxial layer of the light-receiving surface side, the GaAs
Prolonging setting on layer, there are four active area, four active areas are in 2 × 2 array arrangement.
Optionally, the size of the four-quadrant unijunction gallium arsenide cells is 11.5mm × 11.5mm；The ruler of the active area
Very little is 4.75mm × 4.75mm.
Optionally, the four-quadrant unijunction gallium arsenide cells further include:
It is deposited and deviates from the antireflective coating of the N-shaped germanium substrate side in the gallium arsenide epitaxial layer.
Optionally, the light-receiving surface is provided with four first electrode leads, and the shady face is provided with two second electrodes
Lead；
Four first electrode leads are electrically connected with four active area one-to-one correspondence of the light-receiving surface respectively；Two
Shady face corresponding with two of the arbitrary neighborhood active areas is electrically connected second electrode lead described in item respectively.
Optionally, the sun sensor component further include: cover plate glue；
The cover plate glue is between the cover glass and the light-receiving surface of the four-quadrant unijunction gallium arsenide cells；It is described
Cover plate glue has translucency, for pasting the four-quadrant unijunction gallium arsenide cells and the cover glass.
Optionally, the sun sensor component further include: egative film glue；
The egative film glue is between the printed circuit board and the shady face of the four-quadrant unijunction gallium arsenide cells；Institute
Egative film glue is stated for pasting the four-quadrant unijunction gallium arsenide cells and the printed circuit board.
Optionally, electric connector is additionally provided on the printed circuit board；
The electric connector is used for the photoelectricity of the received four-quadrant unijunction gallium arsenide cells of the printed circuit board
Stream output.
Second aspect, the embodiment of the invention also provides a kind of preparation sides of four-quadrant GaAs sun sensor component
Method, comprising:
Form four-quadrant unijunction gallium arsenide cells；The four-quadrant unijunction gallium arsenide cells include sensitive area, the four-quadrant
Limiting unijunction gallium arsenide cells further includes light-receiving surface and the shady face away from the light-receiving surface, and the light-receiving surface and the shady face are equal
At least one contact conductor is set；
Cover glass is pasted in the light-receiving surface of the four-quadrant unijunction gallium arsenide cells, and described in cover glass covering
The light-receiving surface of four-quadrant unijunction gallium arsenide cells；
Printed circuit board is pasted in the shady face of the four-quadrant unijunction gallium arsenide cells；The printed circuit board is provided with
Pad, a contact conductor is corresponding with a pad to be electrically connected；The printed circuit board is additionally provided with fixing threaded hole；
And pedestal is set away from the side of the four-quadrant unijunction gallium arsenide cells in the cover glass, and described
Pedestal also wraps up the four-quadrant unijunction gallium arsenide cells, and the pedestal is passed through to the fixation of screw and the printed circuit board
Screw hole is fixedly connected；The pedestal is provided with open area towards the side with the light-receiving surface, and the open area covers institute
State the sensitive area of four-quadrant unijunction gallium arsenide cells.
Optionally, the formation four-quadrant unijunction gallium arsenide cells, comprising:
One N-shaped germanium substrate is provided；
Gallium arsenide epitaxial layer is deposited close to the side of the light-receiving surface in the N-shaped germanium substrate；
The gallium arsenide epitaxial layer is corroded, four active areas are formed with isolation, four active areas are in 2 × 2
Array arrangement.
Optionally, the formation four-quadrant unijunction gallium arsenide cells, further includes:
Antireflective coating is deposited away from the side of the N-shaped germanium substrate in the gallium arsenide epitaxial layer.
Optionally, cover glass is pasted in the light-receiving surface of the four-quadrant unijunction gallium arsenide cells, comprising:
Pass through cover plate glue cover glass in the light-receiving surface of the four-quadrant unijunction gallium arsenide cells；The cover plate glue tool
There is translucency.
Optionally, printed circuit board is pasted in the shady face of the four-quadrant unijunction gallium arsenide cells, comprising:
Pass through egative film glue printed circuit board in the shady face of the four-quadrant unijunction gallium arsenide cells.
The embodiment of the invention provides a kind of four-quadrant GaAs sun sensor components and preparation method thereof, and the sun is quick
Sensor component has the four-quadrant unijunction gallium arsenide cells for carrying out photoelectric conversion；In the light-receiving surface of four-quadrant unijunction gallium arsenide cells
Side is covered with cover glass, to protect the light-receiving surface of four-quadrant unijunction gallium arsenide cells from corroding；In four-quadrant unijunction arsenic
The shady face side for changing gallium battery is covered with printed circuit board, and the pad of printed circuit board and four-quadrant unijunction GaAs is electric
The contact conductor in pond is electrically connected, so that the electric energy of four-quadrant unijunction gallium arsenide cells conversion is transmitted by printed circuit board；In glass
Glass cover plate is additionally provided with pedestal far from the side of four-quadrant unijunction gallium arsenide cells, and the pedestal is solid by screw and printed circuit board
Fixed connection realizes the encapsulation of four-quadrant unijunction gallium arsenide cells to wrap up four-quadrant unijunction gallium arsenide cells；In pedestal towards four
The side of quadrant unijunction gallium arsenide cells light-receiving surface is provided with open area on pedestal, to expose four-quadrant unijunction GaAs electricity
Pond sensitive area makes four-quadrant unijunction gallium arsenide cells be able to carry out photoelectric conversion.The embodiment of the present invention is able to solve the prior art
The operating temperature range of middle sun sensor component is narrow, resistance to space radiation performance is poor and encapsulating structure is complicated, and it is quick to influence the sun
The technical issues of application and development of sensor component.The embodiment of the present invention in sun sensor component by using four-quadrant list
Junction gallium arsenide battery carries out photoelectric conversion, so that sun sensor component has wider operating temperature range and excellent resistance to sky
Between radiation property, be used for micro-nano satellite posture control system, have many advantages, such as that small in size, light weight, precision are high.In addition, the present invention is implemented
The sun sensor component that example provides is fixedly connected with the encapsulation for realizing sun sensor component, nothing by pedestal with printed circuit board
Encapsulating structure need to be separately set, to simplify the structure of sun sensor component.
Detailed description of the invention
Fig. 1 is a kind of overlooking structure diagram of sun sensor component provided in an embodiment of the present invention；
Fig. 2 is a kind of cross section structure schematic diagram of sun sensor component provided in an embodiment of the present invention；
Fig. 3 is a kind of overlooking structure diagram of four-quadrant unijunction gallium arsenide cells provided in an embodiment of the present invention；
Fig. 4 is a kind of cross section structure schematic diagram of four-quadrant unijunction gallium arsenide cells provided in an embodiment of the present invention；
Fig. 5 is the overlooking structure diagram of another sun sensor component provided in an embodiment of the present invention；
Fig. 6 is the cross section structure schematic diagram of another sun sensor component provided in an embodiment of the present invention；
Fig. 7 is the cross section structure schematic diagram of another four-quadrant unijunction gallium arsenide cells provided in an embodiment of the present invention；
Fig. 8 is the cross section structure schematic diagram of another sun sensor component provided in an embodiment of the present invention；
Fig. 9 is the overlooking structure diagram of another sun sensor component provided in an embodiment of the present invention；
Figure 10 is a kind of flow chart of the preparation method of sun sensor component provided in an embodiment of the present invention.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limiting the invention.It also should be noted that in order to just
Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.
The embodiment of the present invention provides a kind of four-quadrant GaAs sun sensor component, and the four-quadrant GaAs sun is sensitive
Device assembly is able to carry out photoelectric conversion, can be applied to the field for measuring and positioning to equipment, such as can be applied to micro-nano and defend
In star posture control system.Fig. 1 is a kind of overlooking structure diagram of sun sensor component provided in an embodiment of the present invention, and Fig. 2 is
A kind of cross section structure schematic diagram of sun sensor component provided in an embodiment of the present invention.The present invention is implemented combined with Figure 1 and Figure 2,
The four-quadrant GaAs sun sensor component 100 that example provides includes four-quadrant unijunction gallium arsenide cells 10, cover glass 20, print
Circuit board 30 and pedestal 40 processed.
Four-quadrant unijunction gallium arsenide cells 10 include sensitive area 110, the four-quadrant in the embodiment of the present invention combined with Figure 1 and Figure 2,
Limit unijunction gallium arsenide cells 10 further include light-receiving surface 101 and the shady face 102 away from light-receiving surface 101, the light-receiving surface 101 and backlight
Face 102 is provided at least one contact conductor 11；Cover glass 20 is located at the light-receiving surface of four-quadrant unijunction gallium arsenide cells 10
101 sides, and cover glass 20 covers the light-receiving surface 101 of four-quadrant unijunction gallium arsenide cells 10；Printed circuit board 30 is located at four
102 side of shady face of quadrant unijunction gallium arsenide cells 10, printed circuit board 30 are provided with pad 31, an electrical leads 11 with
The corresponding electrical connection of one pad 31, printed circuit board 30 are additionally provided with fixing threaded hole 32；Pedestal 40 is located at cover glass 20 and deviates from
The side of four-quadrant unijunction gallium arsenide cells 10, and pedestal 40 also wraps up four-quadrant unijunction gallium arsenide cells 10, and passes through screw
50 are fixedly connected with the fixing threaded hole 32 of printed circuit board 30, and the side towards light-receiving surface 101 of pedestal 40 is provided with open region
Domain, the open area cover the sensitive area 110 of four-quadrant unijunction gallium arsenide cells 10.
Specifically, four-quadrant unijunction gallium arsenide cells 10 are solar energy in four-quadrant GaAs sun sensor component 100
Battery, is able to carry out photoelectric conversion, and when the sunlight for the light-receiving surface 101 that be incident to four-quadrant unijunction gallium arsenide cells 10 with
When the light-receiving surface 101 of four-quadrant unijunction gallium arsenide cells 10 is angle o, electric current that four-quadrant unijunction gallium arsenide cells 10 can generate
IθAre as follows:
Iθ=I0×cosθ×S
Wherein, I0For sunlight vertical irradiation four-quadrant unijunction gallium arsenide cells 10 light-receiving surface 101 when the unit that generates
Areal electric current, S are the illuminating area of the light-receiving surface 101 of four-quadrant unijunction gallium arsenide cells 10 when sunlight and light-receiving surface are angle o.
For the tool of sensitive area 110 of four-quadrant unijunction gallium arsenide cells 10 there are four quadrant, which can constitute one
(X, Y) coordinate system.When sunlight is incident to the light-receiving surface 101 of four-quadrant unijunction gallium arsenide cells 10 with the angle θ, four-quadrant unijunction
The light-receiving area of four quadrants of gallium arsenide cells 10 is different, has differences, can lead between the electric current for causing four quadrants to generate
The position that the current difference knows the sun is crossed, to realize its measurement and positioning function.Silicon based cells compared with the existing technology, this
The operating temperature range of four-quadrant unijunction gallium arsenide cells 10 is wide in the sun sensor component 100 of embodiment, resistance to space radiation
Function admirable so that sun sensor component 100 can be applied in relatively rugged environment, and is measuring and is positioning application
Upper precision with higher.
Pass through the 101 cover glass cover plate 20 of light-receiving surface in four-quadrant unijunction gallium arsenide cells 10, the cover glass 20 tool
There is translucency, sunlight can expose to the light-receiving surface 101 of four-quadrant unijunction gallium arsenide cells 10 through cover glass 20, so that
Four-quadrant unijunction gallium arsenide cells 10 carry out photoelectric conversion.Meanwhile covering the light-receiving surface 101 of four-quadrant unijunction gallium arsenide cells 10
Cover glass 20 can reduce space ultraviolet light, particle etc. to the shadow of the light-receiving surface 101 of four-quadrant unijunction gallium arsenide cells 10
It rings.
The electric current that 10 photoelectric conversion of four-quadrant unijunction gallium arsenide cells generates requires normally export after conversion,
It is analyzed with the electric current generated to each quadrant of four-quadrant unijunction gallium arsenide cells 10.By the way that four-quadrant unijunction GaAs is electric
The contact conductor 11 in pond 10 and the corresponding electrical connection of the pad 31 of printed circuit board 30, so that four-quadrant unijunction gallium arsenide cells 10 are every
The electric current that one quadrant generates passes through printed circuit board 30 respectively and exports.
In addition, four-quadrant GaAs sun sensor component 100 further includes pedestal 40, which is located at cover glass 20
Away from the side of four-quadrant unijunction gallium arsenide cells 10, and the pedestal 40 passes through the fixing threaded hole of screw 50 and printed circuit board 30
32 are fixedly connected, so that pedestal 40 and 30 knot of printed circuit board for being located at 10 shady face side of four-quadrant unijunction gallium arsenide cells
It closes, four-quadrant unijunction gallium arsenide cells 10 is wrapped up, to form the encapsulation knot of four-quadrant GaAs sun sensor component 100
Structure.Wherein, pedestal 40 is provided with open area towards the side of 10 light-receiving surface of four-quadrant unijunction gallium arsenide cells, the open area
The sensitive area of four-quadrant unijunction gallium arsenide cells 10 can be exposed, so that four-quadrant unijunction gallium arsenide cells 10 can receive the sun
Light carries out photoelectric conversion.Wherein, the installation and fixation of four-quadrant GaAs sun sensor component 100 in practical applications can
It is realized by pedestal 40.
The embodiment of the present invention in four-quadrant GaAs sun sensor component by using four-quadrant unijunction GaAs electricity
Pond carries out photoelectric conversion, and four-quadrant GaAs sun sensor component can be made to have wider operating temperature range and excellent
Resistance to space radiation is used for micro-nano satellite posture control system, has many advantages, such as that small in size, light weight, precision are high.In addition, of the invention
The four-quadrant GaAs sun sensor component that embodiment provides, which is fixedly connected by pedestal with printed circuit board, realizes that the sun is quick
The encapsulation of sensor component, without separately setting encapsulating structure, to simplify the structure of sun sensor component.
Optionally, Fig. 3 is a kind of plan structure signal of four-quadrant unijunction gallium arsenide cells provided in an embodiment of the present invention
Figure, Fig. 4 is a kind of cross section structure schematic diagram of four-quadrant unijunction gallium arsenide cells provided in an embodiment of the present invention.In conjunction with Fig. 1, figure
2, Fig. 3 and Fig. 4, four-quadrant unijunction gallium arsenide cells 10 include N-shaped germanium substrate in four-quadrant GaAs sun sensor component 100
12, and N-shaped germanium substrate 12 is deposited in the gallium arsenide epitaxial layer 13 of 101 side of light-receiving surface, the gallium arsenide epitaxial layer 13
There are four active area 131,132,133 and 134, four active areas 131,132,133 and 134 to arrange in 2 × 2 array for setting
Cloth.
Specifically, N-shaped germanium substrate 12 is attached with the interface of gallium arsenide epitaxial layer 13 in four-quadrant unijunction gallium arsenide cells 10
It is close to form PN junction.Wherein, there are four active areas 131,132,133 and 134 for tool in gallium arsenide epitaxial layer 13, by gallium arsenide epitaxial layer
13 are divided into four parts, constitute four quadrants of coordinate system (X, Y).And the structure that N-shaped germanium substrate 13 is integral, do not divide
Region, therefore the PN junction that is formed about of the interface of N-shaped germanium substrate 12 and gallium arsenide epitaxial layer 13 is the structure of unijunction.Wherein, n
Type germanium substrate is greater than the sum of the area of four active areas 131,132,133 and 134 close to the area of light-receiving surface one side, so that each
The gallium arsenide epitaxial layer 13 of a active area is contacted with N-shaped germanium substrate 12.Illustratively, four-quadrant unijunction gallium arsenide cells are optional
For a rectangular configuration, the size that the long a and width b of the rectangular configuration are constituted is, for example, 11.5mm × 11.5mm；And four active areas
131,132,133 and 134 four identical squares are chosen as, the size of the active area of any one side length L is, for example,
4.75mm×4.75mm。
When the light-receiving surface 101 for thering is sunlight to be irradiated to the angle θ four-quadrant unijunction gallium arsenide cells 10, four active areas
131,132,133 light-receiving area and intensity of illumination difference with 134, so that four active areas 131,132,133 and 134 generate not
Same electric current I1、I2、I3And I4.By the photovoltaic property of solar battery sheet it is found that four of four-quadrant unijunction gallium arsenide cells 10
The electric current I that active area 131,132,133 and 134 generates1、I2、I3And I4Meet cosine characteristic.If active area 131 is coordinate system
The first quartile of (X, Y), active area 132 are second quadrant of coordinate system (X, Y), and active area 133 is the third of coordinate system (X, Y)
Quadrant, active area 134 are the fourth quadrant of coordinate system (X, Y), then have:
I1=I0×cosθ×(L+dx)×(L+dy)
I2=I0×cosθ×(L-dx)×(L+dy)
I3=I0×cosθ×(L-dx)×(L-dy)
I4=I0×cosθ×(L+dx)×(L-dy)
Wherein, 2L is the side length of the sensitive area 110 of four-quadrant unijunction gallium arsenide cells 10, and (dx, dy) is solar facula
Coordinate.In this way, can obtain:
It is produced respectively by four active areas 131,132,133 and 134 of detection four-quadrant unijunction gallium arsenide cells 10 as a result,
Raw electric current I1、I2、I3And I4And when sunlight vertical irradiation four-quadrant unijunction gallium arsenide cells 10, the four-quadrant unijunction arsenic
Change the electric current I that 10 unit area of gallium battery generates0, the hot spot coordinate (dx, dy) of sunlight can be calculated, sunlight is passed through
Hot spot coordinate (dx, dy) can calculate the azimuthal angle beta of angle of incidence of sunlight degree θ and the sun, as follows:
Wherein, H is the vertical range at the open area of pedestal 40 with the light-receiving surface of four-quadrant unijunction gallium arsenide cells 10.
In this way, sun sensor component 100 can since four-quadrant unijunction gallium arsenide cells 10 have high light photoelectric transformation efficiency
To the azimuthal angle beta of angle of incidence of sunlight θ and the sun measurement accuracy with higher and positioning accuracy.
Optionally, Fig. 5 is the overlooking structure diagram of another sun sensor component provided in an embodiment of the present invention, figure
6 be the cross section structure schematic diagram of another sun sensor component provided in an embodiment of the present invention.In conjunction with Fig. 5 and Fig. 6, four-quadrant
The light-receiving surface 101 of unijunction gallium arsenide cells 10 is provided with four first electrode leads 111,112,113 and 114, four-quadrant unijunction
The shady face 102 of gallium arsenide cells 10 is provided with two second electrode leads 115 and 116.Wherein, four first electrode leads
111, it 112,113 and 114 is electrically connected respectively with four active areas 131,132,133 and 134 of light-receiving surface 101 one-to-one correspondence；Two
Shady face 102 corresponding with two active areas of arbitrary neighborhood is electrically connected respectively for bar second electrode lead 115 and 116.
Specifically, photon can make four-quadrant unijunction arsenic when sunlight irradiates four-quadrant unijunction gallium arsenide cells 10
Electronics in gallium battery 10 leaves a hole from valence to conduction band in valence band, produces free electron-hole
It is right, i.e. photo-generated carrier.Since photo-generated carrier is influenced by stronger built in field in PN junction barrier region, so that four-quadrant list
The electronics in the area P enters the area N across PN junction in junction gallium arsenide battery 10, and the hole in the area N passes through PN junction and enters the area P, the potential liter in the area P
The potential of height, the area N reduces, therefore the direction of the electric current I of the output of four-quadrant unijunction gallium arsenide cells 10 is to be referred to by N-shaped germanium substrate 12
To gallium arsenide epitaxial layer 13, it is equivalent to the anode that gallium arsenide epitaxial layer 13 is power supply, N-shaped germanium substrate 12 is the cathode of power supply.
Four first electrode leads are arranged by the light-receiving surface 101 in four-quadrant unijunction gallium arsenide cells 10 in the present embodiment
111,112,113 and 114, and four first electrode leads 111,112,113 and 114 have with four of light-receiving surface 101 respectively
Source region 131,132,133 and 134 corresponds electrical connection, and two second electrode leads 115 and 116 are arranged in shady face 102, and
Shady face 102 corresponding with two active areas of arbitrary neighborhood is electrically connected two second electrode leads 115 and 116 respectively, and
Each contact conductor is corresponded to the pad for being electrically connected to printed circuit board 30 by welding, so that each active area generated
Electric current exports respectively, to realize the azimuthal measurement and positioning to angle of incidence of sunlight and the sun.Wherein, first electrode is drawn
The material of line 111,112,113 and 114 and second electrode lead 115 and 116 is chosen as TiPdAgAu, and first electrode lead
111,112,113 and 114 and the welding manner of second electrode lead 115 and 116 and printed circuit board 30 be chosen as electric resistance welding
It connects.
Optionally, Fig. 7 is that the cross section structure of another four-quadrant unijunction gallium arsenide cells provided in an embodiment of the present invention shows
It is intended to.Such as Fig. 7, four-quadrant unijunction gallium arsenide cells 10 further include being deposited in gallium arsenide epitaxial layer 13 away from N-shaped germanium substrate 12 1
The antireflective coating 14 of side.The antireflective coating 13 can reduce reflection of the four-quadrant unijunction gallium arsenide cells 10 to sunlight, improve
The utilization rate of sunlight, further increases measurement and positioning accuracy.The material of the antireflective coating 14 for example can be Al2O3With
TiO2。
Optionally, Fig. 8 is the cross section structure schematic diagram of another sun sensor component provided in an embodiment of the present invention.Such as
Fig. 8, based on the above technical solution, four-quadrant GaAs sun sensor component 100 further includes cover plate glue 60.The cover plate
Glue 60 is located between cover glass 20 and the light-receiving surface 101 of four-quadrant unijunction gallium arsenide cells 10；The cover plate glue 60 has light transmission
Property, for pasting four-quadrant unijunction gallium arsenide cells 10 and cover glass 20.
Optionally, with continued reference to Fig. 8, based on the above technical solution, four-quadrant GaAs sun sensor component
100 further include egative film glue 70.The egative film glue 70 is located at the shady face of printed circuit board 30 Yu four-quadrant unijunction gallium arsenide cells 10
Between 102；The egative film glue is for pasting four-quadrant unijunction gallium arsenide cells 10 and printed circuit board 30.Wherein, 70, egative film glue
It can be such as a kind of transparent or nontransparent silica gel, which has insulating properties, in order to avoid influence four-quadrant unijunction GaAs
The photoelectric conversion of battery 10.
Optionally, Fig. 9 is the overlooking structure diagram of another sun sensor component provided in an embodiment of the present invention.Such as
Fig. 9 is additionally provided with electric connector 33 based on the above technical solution on printed circuit board 30.The electric connector 33 is used for
The photoelectric current of the received four-quadrant unijunction gallium arsenide cells 10 of printed circuit board 30 is exported, so that corresponding equipment component is to four
Quadrant unijunction gallium arsenide cells 10 generate electric current analyzed, realize four-quadrant GaAs sun sensor component measurement and
Positioning function.
The embodiment of the invention also provides a kind of preparation method of four-quadrant GaAs sun sensor component, the four-quadrants
The preparation method of GaAs sun sensor component can be used in preparing the four-quadrant GaAs sun provided in an embodiment of the present invention
Sensitive device assembly, so that four-quadrant GaAs sun sensor component provided in an embodiment of the present invention has wider operating temperature
Range and excellent resistance to space radiation and simple encapsulating structure.Figure 10 is a kind of sun provided in an embodiment of the present invention
The flow chart of the preparation method of sensitive device assembly.Such as Figure 10, the system of the four-quadrant GaAs sun sensor component of the present embodiment
Preparation Method includes:
S1101, four-quadrant unijunction gallium arsenide cells are formed；The four-quadrant unijunction gallium arsenide cells include sensitive area, institute
Stating four-quadrant unijunction gallium arsenide cells further includes light-receiving surface and the shady face away from the light-receiving surface, the light-receiving surface and the back
Smooth surface is respectively provided at least one contact conductor；
Specifically, the preparation method of four-quadrant unijunction gallium arsenide cells can be chemical vapour deposition technique.For example, by
The gallium arsenide epitaxial layer of p-type is deposited in one N-type substrate, to form unijunction gallium arsenide cells；Again by gallium arsenide epitaxial layer corrode every
From at four active areas, each active area can represent a quadrant of coordinate system (X, Y), to form four-quadrant unijunction GaAs
Battery.
Specific preparation method is optional are as follows: provides a N-shaped germanium substrate；In the N-shaped germanium substrate close to four-quadrant unijunction arsenic
The side of the light-receiving surface of gallium battery deposits gallium arsenide epitaxial layer；The gallium arsenide epitaxial layer is corroded, forms four with isolation
Active area, and four active areas are in 2 × 2 array arrangement.In addition, can also be in gallium arsenide epitaxial layer away from N-shaped germanium substrate
Side is deposited antireflective coating and further increases measurement and positioning accuracy to improve the utilization rate of sunlight.Wherein, in N-shaped germanium base
It bottom can be organic for metal close to the method for the side of the light-receiving surface of four-quadrant unijunction gallium arsenide cells deposition gallium arsenide epitaxial layer
The epitaxial growth of compound chemical gaseous phase deposition (Metal-organic Chemical Vapor Deposition, MOCVD)
Method.
S1102, the light-receiving surface stickup cover glass in the four-quadrant unijunction gallium arsenide cells, and the cover glass covers
Cover the light-receiving surface of the four-quadrant unijunction gallium arsenide cells；
Specifically, the light-receiving surface of formed four-quadrant unijunction gallium arsenide cells can receive sunlight irradiation, photoelectricity is carried out
Conversion.By pasting cover glass in the light-receiving surface side of four-quadrant unijunction gallium arsenide cells, space ultraviolet light, particle etc. are reduced
Influence to the light-receiving surface of four-quadrant unijunction gallium arsenide cells.Wherein, it is pasted in the light-receiving surface of four-quadrant unijunction gallium arsenide cells
The method of cover glass is optional are as follows: pass through cover plate glue cover glass in the light-receiving surface of four-quadrant unijunction gallium arsenide cells, and
The cover plate glue has translucency, so that sunlight can expose to four-quadrant unijunction GaAs electricity through cover glass and egative film glue
Pond, so that four-quadrant unijunction gallium arsenide cells carry out photoelectric converting function.
S1103, the shady face stickup printed circuit board in the four-quadrant unijunction gallium arsenide cells；The printed circuit board
It is provided with pad, a contact conductor is corresponding with a pad to be electrically connected；The printed circuit board is additionally provided with solid
Determine screw hole；
Specifically, the electric current that four-quadrant unijunction gallium arsenide cells photoelectric conversion generates needs the ability after conversion normal
Output.Printed circuit board is pasted by the shady face in four-quadrant unijunction gallium arsenide cells, and by the pad of the printed circuit board
Weld together with the contact conductor of four-quadrant unijunction gallium arsenide cells, form electrical connection, so that four-quadrant unijunction GaAs electricity
The electric current that pond photoelectric conversion generates exports after being converted by printed circuit board.Wherein, in the back of four-quadrant unijunction gallium arsenide cells
The method that smooth surface pastes printed circuit board is optional are as follows: is printed in the shady face of four-quadrant unijunction gallium arsenide cells by egative film glue
Circuit board processed.Wherein, egative film glue can be for example a kind of transparent or nontransparent silica gel.The egative film glue 70 usually has insulation
Property, in order to avoid influence the photoelectric conversion of four-quadrant unijunction gallium arsenide cells.
S1104, pedestal is set away from the side of the four-quadrant unijunction gallium arsenide cells in the cover glass, and described
Pedestal also wraps up the four-quadrant unijunction gallium arsenide cells, and the pedestal is passed through to the fixation of screw and the printed circuit board
Screw hole is fixedly connected；The pedestal is provided with open area towards the side with the light-receiving surface, and the open area covers institute
State the sensitive area of four-quadrant unijunction gallium arsenide cells.
Specifically, pasting cover glass and print respectively in the light-receiving surface and shady face of four-quadrant unijunction gallium arsenide cells respectively
After circuit board processed, by the way that pedestal is arranged away from four-quadrant unijunction gallium arsenide cells side in cover glass, the pedestal is made to wrap up four
Quadrant unijunction gallium arsenide cells.The pedestal is fixedly connected by screw with the fixing threaded hole of printed circuit board, and four-quadrant arsenic is constituted
Change the encapsulating structure of gallium sun sensor component.Meanwhile the side towards four-quadrant unijunction gallium arsenide cells light-receiving surface of pedestal
It is provided with open area, which can expose the sensitive area of four-quadrant unijunction gallium arsenide cells, so that four-quadrant unijunction
Gallium arsenide cells can receive sunlight, carry out photoelectric conversion.In the reality of subsequent four-quadrant GaAs sun sensor component
In, pedestal can be used for installing and fixing four-quadrant GaAs sun sensor component.
The present embodiment by four-quadrant GaAs sun sensor component use four-quadrant unijunction gallium arsenide cells into
Row photoelectric conversion can make four-quadrant GaAs sun sensor component have wider operating temperature range and excellent resistance to sky
Between radiation property, be used for micro-nano satellite posture control system, have many advantages, such as that small in size, light weight, precision are high.In addition, the present invention is implemented
The photocell that example provides, which is fixedly connected by pedestal with printed circuit board, realizes photronic overall package, without separately setting encapsulation knot
Structure, to simplify photronic structure.
Note that the above is only a better embodiment of the present invention and the applied technical principle.It will be appreciated by those skilled in the art that
The invention is not limited to the specific embodiments described herein, be able to carry out for a person skilled in the art it is various it is apparent variation,
It readjusts, be combined with each other and substitutes without departing from protection scope of the present invention.Therefore, although by above embodiments to this
Invention is described in further detail, but the present invention is not limited to the above embodiments only, is not departing from present inventive concept
In the case of, it can also include more other equivalent embodiments, and the scope of the invention is determined by the scope of the appended claims.
Claims (13)
1. a kind of four-quadrant GaAs sun sensor component characterized by comprising four-quadrant unijunction gallium arsenide cells, glass
Glass cover plate, printed circuit board and pedestal；
The four-quadrant unijunction gallium arsenide cells include sensitive area, the four-quadrant unijunction gallium arsenide cells further include light-receiving surface and
Away from the shady face of the light-receiving surface, the light-receiving surface and the shady face are provided at least one contact conductor；
The cover glass is located at the light-receiving surface side of the four-quadrant unijunction gallium arsenide cells, and the cover glass covers institute
State the light-receiving surface of four-quadrant unijunction gallium arsenide cells；
The printed circuit board is located at the shady face side of the four-quadrant unijunction gallium arsenide cells, the printed circuit board setting
There is pad, a contact conductor is corresponding with a pad to be electrically connected, and the printed circuit board is additionally provided with fixed spiral shell
Hole；
The pedestal is located at the side that the cover glass deviates from the four-quadrant unijunction gallium arsenide cells, and the pedestal also wraps
The four-quadrant unijunction gallium arsenide cells are wrapped up in, and are fixedly connected by screw with the fixing threaded hole of the printed circuit board, it is described
The side towards the light-receiving surface of pedestal is provided with open area, and the open area covers the four-quadrant unijunction GaAs
The sensitive area of battery.
2. sun sensor component according to claim 1, which is characterized in that the four-quadrant unijunction gallium arsenide cells packet
It includes:
N-shaped germanium substrate；
And the N-shaped germanium substrate is deposited on close to the gallium arsenide epitaxial layer of the light-receiving surface side, the gallium arsenide epitaxial layer
There are four active area, four active areas are in 2 × 2 array arrangement for upper setting.
3. sun sensor component according to claim 2, which is characterized in that the four-quadrant unijunction gallium arsenide cells
Having a size of 11.5mm × 11.5mm；The size of the active area is 4.75mm × 4.75mm.
4. sun sensor component according to claim 2, which is characterized in that the four-quadrant unijunction gallium arsenide cells are also
Include:
It is deposited and deviates from the antireflective coating of the N-shaped germanium substrate side in the gallium arsenide epitaxial layer.
5. sun sensor component according to claim 2, which is characterized in that the light-receiving surface is provided with four first electricity
Pole lead, the shady face are provided with two second electrode leads；
Four first electrode leads are electrically connected with four active area one-to-one correspondence of the light-receiving surface respectively；Two institutes
Stating second electrode lead, shady face corresponding with two of the arbitrary neighborhood active areas is electrically connected respectively.
6. sun sensor component according to claim 1, which is characterized in that further include: cover plate glue；
The cover plate glue is between the cover glass and the light-receiving surface of the four-quadrant unijunction gallium arsenide cells；The cover plate
Glue has translucency, for pasting the four-quadrant unijunction gallium arsenide cells and the cover glass.
7. sun sensor component according to claim 1, which is characterized in that further include: egative film glue；
The egative film glue is between the printed circuit board and the shady face of the four-quadrant unijunction gallium arsenide cells；The bottom
Piece glue is for pasting the four-quadrant unijunction gallium arsenide cells and the printed circuit board.
8. sun sensor component according to claim 1, which is characterized in that be additionally provided with electricity on the printed circuit board
Connector；
The electric connector is used for the photoelectric current of the received four-quadrant unijunction gallium arsenide cells of the printed circuit board is defeated
Out.
9. a kind of preparation method of four-quadrant GaAs sun sensor component characterized by comprising
Form four-quadrant unijunction gallium arsenide cells；The four-quadrant unijunction gallium arsenide cells include sensitive area, the four-quadrant list
Junction gallium arsenide battery further includes light-receiving surface and the shady face away from the light-receiving surface, and the light-receiving surface and the shady face are respectively provided with
At least one contact conductor；
Cover glass is pasted in the light-receiving surface of the four-quadrant unijunction gallium arsenide cells, and the cover glass covers the four-quadrant
Limit the light-receiving surface of unijunction gallium arsenide cells；
Printed circuit board is pasted in the shady face of the four-quadrant unijunction gallium arsenide cells；The printed circuit board is provided with weldering
Disk, a contact conductor is corresponding with a pad to be electrically connected；The printed circuit board is additionally provided with fixing threaded hole；
And pedestal, and the pedestal are set away from the side of the four-quadrant unijunction gallium arsenide cells in the cover glass
The four-quadrant unijunction gallium arsenide cells are also wrapped up, and the pedestal is passed through to the fixing threaded hole of screw and the printed circuit board
It is fixedly connected；The pedestal is provided with open area, the open area covering described four towards the side with the light-receiving surface
The sensitive area of quadrant unijunction gallium arsenide cells.
10. according to the method described in claim 9, it is characterized in that, the formation four-quadrant unijunction gallium arsenide cells, comprising:
One N-shaped germanium substrate is provided；
Gallium arsenide epitaxial layer is deposited close to the side of the light-receiving surface in the N-shaped germanium substrate；
The gallium arsenide epitaxial layer is corroded, four active areas are formed with isolation, four active areas are in 2 × 2 battle array
Column arrangement.
11. according to the method described in claim 10, it is characterized in that, the formation four-quadrant unijunction gallium arsenide cells, are also wrapped
It includes:
Antireflective coating is deposited away from the side of the N-shaped germanium substrate in the gallium arsenide epitaxial layer.
12. according to the method described in claim 9, it is characterized in that, the four-quadrant unijunction gallium arsenide cells light-receiving surface
Paste cover glass, comprising:
Pass through cover plate glue cover glass in the light-receiving surface of the four-quadrant unijunction gallium arsenide cells；The cover plate glue has saturating
Photosensitiveness.
13. according to the method described in claim 9, it is characterized in that, the four-quadrant unijunction gallium arsenide cells shady face
Paste printed circuit board, comprising:
Pass through egative film glue printed circuit board in the shady face of the four-quadrant unijunction gallium arsenide cells.
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| CN201910132737.1A CN109708753A (en) | 2019-02-22 | 2019-02-22 | A kind of four-quadrant GaAs sun sensor component and preparation method thereof |
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| CN201910132737.1A CN109708753A (en) | 2019-02-22 | 2019-02-22 | A kind of four-quadrant GaAs sun sensor component and preparation method thereof |
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