CN109660214A - One kind being applied to the 5th third-generation mobile communication base station Doherty power amplifier - Google Patents
One kind being applied to the 5th third-generation mobile communication base station Doherty power amplifier Download PDFInfo
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- CN109660214A CN109660214A CN201811565758.4A CN201811565758A CN109660214A CN 109660214 A CN109660214 A CN 109660214A CN 201811565758 A CN201811565758 A CN 201811565758A CN 109660214 A CN109660214 A CN 109660214A
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- 238000010295 mobile communication Methods 0.000 title claims abstract description 14
- 230000003321 amplification Effects 0.000 claims abstract description 23
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 23
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- 230000013011 mating Effects 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 238000004891 communication Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000003786 synthesis reaction Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Amplifiers (AREA)
Abstract
One kind being applied to the 5th big device of third-generation mobile communication base station Doherty function, it can be applied to the RF front-end power amplifier that base station uses, the big device of radio frequency Doherty function includes No. four power divider units, main radio-frequency power amplifier unit, peak RF power radiofrequency power amplification unit, output end Power Combiner Unit, signal output end matching unit.No. four power divider units are connect with signal generator, input terminal port Impedance is 50 ohm, two-way power distribution is first carried out to the radiofrequency signal of input, after two-way power distribution, upper signal all the way is being allocated secondary using two two-way power distributing units, such purpose be make all the way radiofrequency signal by continuous power distribution twice four road signals are assigned as by signal all the way.The main radiofrequency power amplification unit includes signal link unit all the way, is connected with the output signal all the way of No. four power divider units, to amplified signal in output to Power Combiner Unit.
Description
Technical field
The present invention relates to base station radio-frequency power amplifications in radio-frequency power amplifier field more particularly to the 5th third-generation mobile communication
Device.
Background technique
Current wireless communication technique comes into the rear 4G epoch, and 4G technical application range is general wide, technology maturation.But with
The rapid development of society, the demand of people further increase, to network speed and network quality also it is further proposed that new requirement.
2017 year end 3GPP establish first the 5th generation communication standard, and further excitation has the national capital deepening investment of research and development strength
The research and development of 5th generation communication system.The realization of 5th generation communication needs adaptable chip and does carrier, and radio-frequency front-end is it in weight
Weight, the high-quality colleges and universities of state's class and scientific research institutions and strong radio frequency producer propose to be applicable to the 5th Dai Tongxin in succession instantly
Framework, it is already possible to solve the problems, such as some, but there are also most of problems effectively to be solved.The communication of 5th generation needs
More high linearity and higher communication efficiency, the communication of the 5th generation have been done in terms of modulation very big with 3G the and 4G communication technology before
It improves, power problems are easier to increase.It is all to be worked in traditional modulation system in a manner of constant enveloped modulation, signal peak-to-average ratio
Smaller, can use nonlinear power amplifier progress power amplification can obtain preferable working efficiency, but the 5th generation is logical
The high peak-to-average power ratio technology that letter technology uses, is easy to make distorted signals, have more in signal output end using nonlinear amplification technology
Signal noise can severe jamming adjacent channel communication, the especially base station power amplifier of base station end proposes design
Harsher requirement.Traditional base station power amplifier into the communication of the 5th generation for that can be such that power consumption becomes more
Greatly, it is therefore desirable to traditional base station end-fire frequency power architecture be improved to adapt to the standard requirement of the 5th generation communication.Traditional
Base station power amplifier can amplify radiofrequency signal using a way RF power framework or 2 way RF power frameworks, imitate
Rate is relatively low, also weaker to the impedance traction of load, and also relatively low in back-off point efficiency, volume is also larger, constrains
It is applied in communication later.
Summary of the invention
The embodiment of the present invention proposes a kind of applied to the 5th third-generation mobile communication base station Doherty function to solve the above-mentioned problems
Big device, to solve high frequency millimeter wave frequency section radio-frequency power amplifier power efficiency, the linearity, some column problems such as harmonics restraint,
It is easily installed and large-scale production.
The embodiment of the invention provides one kind to be applied to the 5th big device of third-generation mobile communication base station Doherty function, can be applied to
The RF front-end power amplifier that base station uses, the big device of radio frequency Doherty function include No. four power divider units, master
Radio-frequency power amplifier unit, peak RF power radiofrequency power amplification unit, output end Power Combiner Unit, signal output
Hold matching unit.No. four power divider units are connect with signal generator, and input terminal port Impedance is 50 ohm, right
The radiofrequency signal of input first carries out two-way power distribution, after two-way power distribution, is using two two-way power distributing units
Upper signal all the way is allocated secondary, such purpose be make all the way radiofrequency signal by continuous power distribution twice by
Signal is assigned as four road signals all the way.The main radiofrequency power amplification unit includes signal link unit all the way, with four Lu Gong
The output signal all the way of rate dispenser unit is connected, to amplified signal in output to Power Combiner Unit.Described
Peak power amplifier includes 3 road signal paths, the input terminal of peak power amplifier and No. four power divider lists
The output end of member is connected, remaining 3 No. four power divider lists after being particularly connected to main power amplifier connection
First output port, carries out power amplification to the peak RF signal of input, is that power closes to amplified signal output port
Generator unit link.The input terminal of the Power Combiner Unit connects the output port and peak work of main power amplification unit
The output port of the output port of rate device unit, Power Combiner Unit connects power match unit loads network.The function
Power combing unit all the way in the connection of rate output matching network unit, carrying out being matched to load to the signal after synthesis makes power
Efficiency maximizes.
Further, the device area of the main Power Amplifier Unit and the peak power device unit is different
The size dimension of sample.The work of the main power amplifier is in AB class operating mode.
Further, the main power amplifier and peak power amplifier use GaAs PHEMT power.
Further, the main Power Amplifier Unit includes input signal matching unit, exports matching unit.Adopt input
Matching is matched with lumped parameter original part, and matched framework is the matching of π type frame structure, and the output matching unit uses T row
The output build-out resistor of main power amplifier list is matched to 50 ohm by distribution structure.
Further, the peak power amplifier unit is made of three tunnel peak power amplifier units, includes peak value
Power amplifier 1, peak power amplifier 2, peak power amplifier 3.Three tunnel peak power amplifier in parallel and four road power
The output signal link connection of distributor.The output of peak power amplifier is also the framework and power combing of parallel link connection
The connection of device unit.The operating point of peak power amplifier 1 is arranged in B class operating mode, and the operating point of peak power amplifier 2 is set
It sets in C class operating mode, the operating point of peak power amplifier 2 is arranged in C class operating mode.
Further, the peak power amplifier unit includes input signal matching unit, exports matching unit.It adopts defeated
Enter matching to be matched with lumped parameter original part, matched framework is the matching of π type frame structure, and the output matching unit uses T row
The output build-out resistor of peak power amplifier list is matched to 50 ohm by mating structure.
Further, the peak power amplifier is that parallel circuit is connect with the connection type of the main power amplifier
Mode, input terminal are connected to the output end of No. four power dividers, and output end parallel link is connected to Power Combiner Unit
Input port.
Further, the power combing unit connects structure by the impedance converter unit of a quarter of four 50 ohm of routings
At the output port output impedance of difference tractive load impedance modulation to radio-frequency power amplifier.
Further, the effect of the main power radio-frequency power amplifier is to play to put to the amplification of small-power input signal
Big effect is not reaching main power signal output packet with before, and all auxiliary power amplifiers are at by state, defeated
Enter during signal enhancing as main power device reaches saturation state, the 1 start-up operation work of peak power amplifier, peak value is put
Big device 2, peak amplifier 3 are in by state.As input signal is further reinforced, amplification input signal may participate in work
Radio-frequency power amplifier have main power amplifier, auxiliary power amplifier 1, auxiliary power amplifier 2, however bearing power is put
Big device 3 is in and cannot work by state.When the sufficiently large energy comparison of the signal swing of input is more, booster amplifier 3
Just start normal work.Each amplifier can be linear amplification input signal.
It is provided by the invention a kind of applied to the 5th big device of third-generation mobile communication base station Doherty function, it is small in size to be convenient for scale
Production is able to satisfy the demand of the 5th third-generation mobile communication, and a wide range of in back-off is able to maintain higher communication efficiency in the process,
There is the preferable linearity.
Detailed description of the invention
The advantages of in order to clearly illustrate the Technical Architecture of the invention implemented, make the embodiment of the present invention, convenience
What feature became will more clearly be described with reference to the drawings.Obvious the embodiment described is a part of example example of the present invention, without
It is whole examples.The embodiment of offer is in order to which the principle of the invention and actual application is explained further, to make ability
Domain device others skilled in the art understand the content of present invention, and all other implementation obtained without creative efforts
Example shall fall within the protection scope of the present invention.
Fig. 1, which is that the present invention is a kind of, is applied to the 5th big device structure chart of third-generation mobile communication base station Doherty function.
Fig. 2, which is that the present invention is a kind of, is applied to the 5th big implement body circuit diagram of third-generation mobile communication base station Doherty function.
Specific embodiment
Hereinafter reference will be made to the drawings carrys out detailed description of the present invention embodiment.The present invention however many different modes can be used
Realize example of the present invention, the other embodiments of the present invention that obtain under the premise of other technologies engineering staff is in no creative work
It shall fall within the protection scope of the present invention.
The present invention is a kind of referring to Fig.1 is applied to the 5th big device structure chart of third-generation mobile communication base station Doherty function.Include four tunnels
Power divider 1, main power amplifier 2, peak power power amplifier 3, peak power power amplifier 4, peak power function
Rate amplifier 5, power combiner 6, load unit 7.The effect of the main power radio-frequency power amplifier 2 is inputted to small-power
Amplification is played the role of in the amplification of signal, is not reaching main power signal output packet with before, all auxiliary power amplifiers are all
It is in by state, as main power device reaches saturation state during input signal enhancing, peak power amplifier 3 is opened
Beginning efforts, peak amplifier 4, peak amplifier 5 are in by state.As input signal is further reinforced, amplification
The radio-frequency power amplifier that input signal may participate in work has main power amplifier, auxiliary power amplifier 3, auxiliary power amplification
Device 4, however bearing power amplifier 5 be in cannot work by state.When the signal swing of input is sufficiently large, energy comparison is more
When, booster amplifier 5 just starts normally to work.Each amplifier can be linear amplification input signal.Four road power
Distributor 1 is allocated to input signal, and the output signal distributed is distributed to power amplification unit, power combiner 6
The output signal of main power amplifier 2, peak power amplifier 3, peak power amplifier 4, peak power amplifier 5 is carried out
Synthesis, load unit 7 play the role of to the signal of synthesizer it is matched, power signal transmissions to antenna end.
Fig. 2 one kind is please referred to applied to the 5th big implement body circuit diagram of third-generation mobile communication base station Doherty radio frequency function.Such as figure
Shown in 2, the base station terminal includes a base station antenna system, and the antenna system is amplified comprising four road Doherty radio-frequency powers
Device, power divider 201 and load 208.Input terminal No. four power divider 201 and the letter of the big device of Doherty radio frequency function
The connection of number generator, for receiving the radiofrequency signal modulated, 201 No. four power dividers are to signal progress even power
The signal distributed, is distributed to main Power Amplifier Unit 202, peak amplifier unit 203, peak amplifier unit by distribution
204, peak amplifier unit 205.By 202 main power radio-frequency units and 203 peak power units in 206 power combing units
Power combing is carried out, the synthesis unit of peak amplifier unit 204 and 206 carries out power signal under the action of synthesis unit 207
Synthesis, peak amplifier unit 205 and synthesis unit 207 power combing again on load unit 208.
The main Power Amplifier Unit 202 of the Doheerty includes 2021 power amplification units and 2022 a quarters 50
Ohm radio frequency matched line unit.The output port of No. four power dividers in 2021 first connections all the way, signal enter in 2021,
Radiofrequency signal is amplified by 2021 effect and is connected in series with 2022 a quarter, 50 Ohm radio frequency matched line unit, is played
Load impedance modulates matched effect, and 2021 are designed using the PHEMT structure of GaAs technology, fully considers output power and face
Long-pending size is matched to most suitable state.2022 can optimize domain structure, and minimizing the area of Unit 2022 can be right
Load generates modulating action.
The main Power Amplifier Unit 203 of the Doheerty includes 2031 power amplification units and 2032 a quarters 50
Ohm radio frequency matched line unit.The output port of No. four power dividers in 2031 first connections all the way, signal enter in 2031,
Radiofrequency signal is amplified by 2031 effect and is connected in series with 2032 a quarter, 50 Ohm radio frequency matched line unit, is played
Load impedance modulates matched effect, and 2031 are designed using the PHEMT structure of GaAs technology, fully considers output power and face
Long-pending size is matched to most suitable state.2032 can optimize domain structure, and minimizing the area of Unit 2032 can be right
Load generates modulating action.
The main Power Amplifier Unit 204 of the Doheerty includes 2041 power amplification units and 2042 a quarters 50
Ohm radio frequency matched line unit.The output port of No. four power dividers in 2041 first connections all the way, signal enter in 2041,
Radiofrequency signal is amplified by 2041 effect and is connected in series with 2042 a quarter, 50 Ohm radio frequency matched line unit, is played
Load impedance modulates matched effect, and 2041 are designed using the PHEMT structure of GaAs technology, fully considers output power and face
Long-pending size is matched to most suitable state.2042 can optimize domain structure, and minimizing the area of Unit 2042 can be right
Load generates modulating action.
The main Power Amplifier Unit 205 of the Doheerty includes 2051 power amplification units and 2052 a quarters 50
Ohm radio frequency matched line unit.The output port of No. four power dividers in 2021 first connections all the way, signal enter in 2051,
Radiofrequency signal is amplified by 2051 effect and is connected in series with 2052 a quarter, 50 Ohm radio frequency matched line unit, is played
Load impedance modulates matched effect, and 2051 are designed using the PHEMT structure of GaAs technology, fully considers output power and face
Long-pending size is matched to most suitable state.2052 can optimize domain structure, and minimizing the area of Unit 2052 can be right
Load generates modulating action.
The composition of 2021 radio-frequency power amplifier includes input matching circuit and output matching circuit, is communicated in 5G low
Under power signal, work in AB class state.The composition of 2031 radio-frequency power amplifier includes input matching circuit and output
Match circuit works in 5G communication under power signal in B class state.The composition of 2041 radio-frequency power amplifier includes
Input matching circuit and output matching circuit work in the case where 5G communicates high power signals in C class state.The 2041 radio frequency function
The composition of rate amplifier includes input matching circuit and output matching circuit, in the case where 5G communicates high power signals, is worked in C class shape
State.
Claims (7)
1. one kind is applied to the 5th big device of third-generation mobile communication base station Doherty function, which is characterized in that the big device of radio frequency Doherty function
It is closed comprising No. four power divider units, main radio-frequency power amplifier unit, peak RF power amplifying unit, output end power
Generator unit, signal output end matching unit are according to claim 1 a kind of to be applied the 5th third-generation mobile communication 28GHz's
GaAs radio-frequency power amplifier, which is characterized in that the input matching network and inter-stage matching network use T-type mating structure.
2. No. four power divider unit according to claim 1, which is characterized in that the power divider cascades two-stage
Two-way power divider.
3. main radio-frequency power amplifier unit according to claim 1, which is characterized in that the main radio-frequency power amplifier
Unit is made of input matching circuit and output matching circuit, and output end cascades 50 ohm characteristic impedance of a quarter matching electricity
Road.
4. peak RF power amplifying unit according to claim 1, which is characterized in that the peak RF power amplification
Unit includes input matching circuit and output matching circuit, and unit output impedance is matched to 50 ohm.
5. peak RF power amplifying unit according to claim 4, which is characterized in that the peak RF power unit
Comprising 3 parallel peak power amplifiers, the working condition of unlatching is not identical.
6. the output end Power Combiner Unit told according to claim 1, which is characterized in that the output end power combiner
Unit individually synthesizes power signal all the way.
7. the signal output end matching unit told according to claim 1, which is characterized in that the signal output end matching unit
Matched load is at maximum power impedance.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111934633A (en) * | 2020-09-27 | 2020-11-13 | 成都嘉纳海威科技有限责任公司 | High-power gain high-back-off efficiency power amplifier |
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CN102594266A (en) * | 2012-03-07 | 2012-07-18 | 武汉正维电子技术有限公司 | Multi-stage multi-channel Doherty amplifier |
CN203039643U (en) * | 2012-12-29 | 2013-07-03 | 福州大学 | Four-stage double-balanced power amplifier |
CN103534935A (en) * | 2013-06-07 | 2014-01-22 | 华为技术有限公司 | Doherty power amplifier circuit, signal processing circuit and a multi-band base station |
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CN206620209U (en) * | 2017-04-18 | 2017-11-07 | 深圳国人通信股份有限公司 | A kind of high-power amplifying device |
US20180152149A1 (en) * | 2016-11-30 | 2018-05-31 | Sumitomo Electric Device Innovations, Inc. | Doherty amplifier |
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CN1623277A (en) * | 2002-01-28 | 2005-06-01 | 克里微波公司 | N-way RF power amplifier circuit with increased back-off capability and power added efficiency |
CN102594266A (en) * | 2012-03-07 | 2012-07-18 | 武汉正维电子技术有限公司 | Multi-stage multi-channel Doherty amplifier |
CN203039643U (en) * | 2012-12-29 | 2013-07-03 | 福州大学 | Four-stage double-balanced power amplifier |
CN103534935A (en) * | 2013-06-07 | 2014-01-22 | 华为技术有限公司 | Doherty power amplifier circuit, signal processing circuit and a multi-band base station |
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CN111934633A (en) * | 2020-09-27 | 2020-11-13 | 成都嘉纳海威科技有限责任公司 | High-power gain high-back-off efficiency power amplifier |
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