CN109659068B - Low-temperature curing type back silver paste for all-aluminum back surface field crystalline silicon solar cell - Google Patents
Low-temperature curing type back silver paste for all-aluminum back surface field crystalline silicon solar cell Download PDFInfo
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 105
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 72
- 239000004332 silver Substances 0.000 title claims abstract description 72
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 45
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 37
- 238000013035 low temperature curing Methods 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 30
- 238000001723 curing Methods 0.000 claims abstract description 25
- 230000008569 process Effects 0.000 claims abstract description 22
- 238000002360 preparation method Methods 0.000 claims abstract description 13
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 10
- 239000003085 diluting agent Substances 0.000 claims abstract description 10
- 230000009974 thixotropic effect Effects 0.000 claims abstract description 10
- 239000003822 epoxy resin Substances 0.000 claims abstract description 8
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 8
- 239000012752 auxiliary agent Substances 0.000 claims abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 14
- 239000011521 glass Substances 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 238000005245 sintering Methods 0.000 claims description 11
- 238000001035 drying Methods 0.000 claims description 10
- 239000004841 bisphenol A epoxy resin Substances 0.000 claims description 8
- 239000011362 coarse particle Substances 0.000 claims description 8
- 238000001914 filtration Methods 0.000 claims description 8
- 238000000227 grinding Methods 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- 238000005303 weighing Methods 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910021485 fumed silica Inorganic materials 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- FQYUMYWMJTYZTK-UHFFFAOYSA-N Phenyl glycidyl ether Chemical compound C1OC1COC1=CC=CC=C1 FQYUMYWMJTYZTK-UHFFFAOYSA-N 0.000 claims description 5
- 239000004359 castor oil Substances 0.000 claims description 5
- 235000019438 castor oil Nutrition 0.000 claims description 5
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 5
- HPILSDOMLLYBQF-UHFFFAOYSA-N 2-[1-(oxiran-2-ylmethoxy)butoxymethyl]oxirane Chemical compound C1OC1COC(CCC)OCC1CO1 HPILSDOMLLYBQF-UHFFFAOYSA-N 0.000 claims description 4
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 claims description 4
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 claims description 4
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 claims description 4
- 239000004952 Polyamide Substances 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 4
- 229920002647 polyamide Polymers 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- HHRACYLRBOUBKM-UHFFFAOYSA-N 2-[(4-tert-butylphenoxy)methyl]oxirane Chemical compound C1=CC(C(C)(C)C)=CC=C1OCC1OC1 HHRACYLRBOUBKM-UHFFFAOYSA-N 0.000 claims description 3
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 229930003836 cresol Natural products 0.000 claims description 3
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- 230000008014 freezing Effects 0.000 claims description 2
- 238000007710 freezing Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 17
- 238000003466 welding Methods 0.000 abstract description 14
- 239000002002 slurry Substances 0.000 abstract description 10
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 abstract description 4
- 239000002245 particle Substances 0.000 description 13
- 238000012360 testing method Methods 0.000 description 13
- 239000000843 powder Substances 0.000 description 8
- 238000004806 packaging method and process Methods 0.000 description 6
- 238000003912 environmental pollution Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000003981 vehicle Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Sustainable Development (AREA)
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- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
Abstract
The invention relates to a low-temperature curing type back silver paste for an all-aluminum back surface field crystalline silicon solar cell, which consists of the following components in parts by weight: 10-20 parts of spherical silver powder; 50-60 parts of flake silver powder; 14-30 parts of bisphenol A type epoxy resin; 5-9.6 parts of reactive diluent; 0.77-1.18 parts of curing agent dicyandiamide; 0.02-0.04 part of curing accelerator; 0.2-0.5 part of thixotropic auxiliary agent. The invention also discloses a preparation method of the silver paste and a process for manufacturing the crystalline silicon solar cell by using the silver paste. Compared with the battery prepared by the traditional slurry and the preparation process, the back silver paste and the crystalline silicon solar cell prepared by the preparation process have the advantages that the photoelectric conversion efficiency is improved by 0.4 percent in absolute value, and the welding adhesion force completely meets the current use requirement on the welding adhesion force of the cell.
Description
Technical Field
The invention relates to the field of conductive silver paste for solar cells, in particular to low-temperature curing type back silver paste for all-aluminum back surface field crystalline silicon solar cells, a preparation method and application thereof.
Background
With the excessive exploitation and consumption of fossil energy such as petroleum, coal, natural gas and the like, the energy crisis and the greenhouse effect environmental pollution become more and more serious, and people are forced to seek replaceable novel clean energy. The sun will become an effective provider of clean human energy for a long time in the future. Solar power generation directly converts solar radiation into electric energy, and is the most direct mode of the least solar energy conversion links and the most direct utilization in all clean energy.
The main solar cell at present is a crystalline silicon solar cell, and from the viewpoint of technical maturity, photoelectric conversion efficiency and raw material sources, the key development object of the photovoltaic solar cell will still be a silicon solar cell for a long time in the future. How to further improve the photoelectric conversion efficiency of the crystalline silicon solar cell is one of the continuously pursued targets in the industry.
The aluminum Back Surface Field (BSF) is a typical back surface passivation structure commonly adopted by modern crystalline silicon solar cells, through development of many years, the production process of the aluminum back surface field gradually tends to be mature and stable, and various researches on the aluminum back surface field are deepened, which indicate that the aluminum back surface field is still widely used for the crystalline silicon solar cells for a long time in the future and have great contribution to improving the conversion efficiency of the cells.
Therefore, the traditional preparation process flow of the crystalline silicon solar cell is that a raw material bare silicon wafer is subjected to cleaning and texturing, diffusion is carried out to prepare a PN junction, then a PSG phosphorosilicate glass layer is etched to remove, a blue membrane is prepared by PECVD (plasma enhanced chemical vapor deposition) plating and reverse film plating, a back silver paste is printed by a screen printing process to prepare a back silver electrode, a back aluminum paste is printed after drying to prepare an aluminum back surface field, a front silver paste is printed after drying to prepare a front silver electrode, and then the cell is formed by drying and short-time high-temperature co-sintering.
In order to meet the technical process, the back silver paste mainly comprises a conductive functional phase, high-temperature inorganic bonding phase glass powder, a printing auxiliary agent organic carrier and other auxiliary agents. Wherein the organic vehicle decomposes at elevated temperatures after printing and is not present in the final back silver electrode. The glass powder can well wet the surface of the silicon wafer and can simultaneously permeate the interior of the silicon wafer to form good adhesive force and other performance requirements due to the requirement of meeting the requirements of low melting point and good fluidity during high-temperature sintering, so that the most used glass powder in the industry at present is lead-based glass powder which can meet a series of performance requirements, but has higher lead-containing ratio, greater environmental pollution and no environmental protection requirement. With the increasing popularity of solar cells, the use of lead-containing solar cell conductive silver paste will be limited and will gradually be eliminated. Although many lead-free glass systems have been developed to address this current situation, the photoelectric conversion performance of the battery is sacrificed to some extent, and other heavy metals are not used in the preparation process of the glass powder, which still causes considerable environmental pollution. Therefore, if the preparation process and the structure of the existing crystalline silicon solar cell can be fundamentally changed, the use of glass powder is avoided, the current situation can be thoroughly changed, and the problem of environmental pollution is solved.
On the other hand, for a conventional battery structure using common back silver paste, due to the fact that the back aluminum paste is low in compactness and the back silver paste cannot be effectively attached to the back aluminum paste, the back silver paste is directly printed on a silicon substrate, an aluminum back field does not exist in a back silver electrode area, an invalid area is formed, the collection rate of a battery on minority carriers is reduced, the open-circuit voltage of the battery is reduced, the short-circuit current is reduced, and finally the photoelectric conversion efficiency of the battery is reduced. Therefore, if the structure can be changed, the compactness of the aluminum back surface field is improved, the back surface silver electrode can be well attached to the aluminum back surface field, so that a BSF layer is formed in the back surface silver area, the open-circuit voltage and the short-circuit current of the prepared solar cell can be improved, and the photoelectric conversion efficiency of the cell is effectively improved.
Disclosure of Invention
The invention aims to provide a low-temperature curing type back silver paste for an all-aluminum back surface field crystalline silicon solar cell, which does not use inorganic high-temperature binder glass powder, so that the back silver paste is lead-free, cadmium-free and thallium-free, and a cell prepared by using the back silver paste has excellent performance and high photoelectric conversion efficiency.
The invention realizes the purpose through the following technical scheme: the low-temperature curing type back silver paste for the all-aluminum back surface field crystalline silicon solar cell comprises the following components in parts by weight:
10-20 parts of spherical silver powder;
50-60 parts of flake silver powder;
14-30 parts of bisphenol A type epoxy resin;
5-9.6 parts of reactive diluent;
0.77-1.18 parts of curing agent dicyandiamide;
0.02-0.04 part of curing accelerator;
0.2-0.5 part of thixotropic auxiliary agent.
Further, the surface of the spherical silver powder is coated with a surface treating agent, the purity of the spherical silver powder is more than 99.90%, and the D50 of the spherical silver powder is 0.8-2.0 μm; the purity of the flake silver powder is more than 99.90%, and the D50 of the flake silver powder is 2.0-4.0 μm.
Further, the bisphenol A epoxy resin is one or two of E51 type epoxy resin and E44 type epoxy resin.
Further, the reactive diluent is one or a mixture of more of butanediol diglycidyl ether, phenyl glycidyl ether, cresol glycidyl ether and p-tert-butylphenyl glycidyl ether.
Further, the curing accelerator is one or a mixture of 2-methylimidazole, 2-ethyl-4-methylimidazole and 2-phenylimidazole.
Furthermore, the thixotropic auxiliary agent is one or a mixture of more of fumed silica, polyamide wax and hydrogenated castor oil.
A preparation method of low-temperature curing type back silver paste for an all-aluminum back surface field crystalline silicon solar cell comprises the following steps: accurately weighing the materials in parts by weight according to the formula in a container, uniformly mixing in a planetary high-speed stirrer with rotation and revolution functions, grinding and dispersing on a three-roller grinder until the fineness is below 15 mu m, the appearance is fine, uniform and free of coarse particles, further filtering by using a 200-mesh screen to obtain the low-temperature curing type back silver paste for the all-aluminum back field crystalline silicon solar cell, and freezing and storing at the temperature of-5 ℃.
A method for preparing a solar cell piece by using a low-temperature curing type silver paste for an all-aluminum back surface field crystalline silicon solar cell comprises the following steps: firstly, according to the preparation process flow of the traditional crystalline silicon solar cell, a raw material bare silicon wafer is subjected to front cleaning and texturing, then diffusion is carried out to prepare a PN junction, then a PSG phosphorosilicate glass layer is removed through etching, a blue membrane is prepared through PECVD (plasma enhanced chemical vapor deposition) plating and anti-reflection film plating, a back surface aluminum paste is firstly printed through a screen printing process in a full-plate mode, a front surface silver paste is printed after drying, then drying is carried out, short-time high-temperature fast sintering and co-sintering are carried out according to a cell sintering process, an aluminum back surface field and a front surface silver electrode are prepared, then the low-temperature curing type silver paste for the full-aluminum back surface field crystalline silicon solar cell is printed, and the low-temperature curing type silver paste is cured in.
Compared with the prior art, the low-temperature curing type back silver paste for the all-aluminum back surface field crystalline silicon solar cell has the beneficial effects that:
1) the back silver paste for the crystalline silicon solar cell obtained according to the formula does not contain harmful elements such as lead and cadmium because glass powder is not used, and completely meets the requirement of environmental protection;
2) the product of the invention adopts the mixed powder of spherical silver powder and flake silver powder as a conductive material, and takes the flake silver powder as a main part and the spherical silver powder as an auxiliary part, so that an electrode film is more uniform and compact, and the network contact of a conductive phase is more perfect, thereby effectively improving the conductivity and adhesive force of a silver electrode;
3) according to the cell prepared by the invention, the back silver electrode is arranged on the back aluminum layer, and the BSF layer is formed in the back silver area, so that the open-circuit voltage and the short-circuit current of the prepared solar cell are improved, and the photoelectric conversion efficiency of the cell is effectively improved.
Detailed Description
The following are specific embodiments of the present invention, which are provided to further describe the present invention so that advantages and features of the present invention may be more readily understood by those skilled in the art, and the present invention is not thus limited to the described embodiments of the present invention.
Example 1
Weighing 10 parts of spherical silver powder with the particle size D50 of 0.8 mu m, 60 parts of flake silver powder with the particle size D50 of 4.0 mu m, 5120 parts of bisphenol A epoxy resin E, 8.3 parts of butanediol diglycidyl ether serving as an active diluent, 1.18 parts of dicyandiamide serving as a curing agent, 0.02 part of 2-methylimidazole serving as a curing accelerator and 0.5 part of fumed silica serving as a thixotropic aid in parts by mass, sequentially putting the materials into a planetary stirrer with rotation and revolution functions, uniformly mixing, transferring the uniformly mixed materials to a three-roll grinder, grinding and dispersing according to a certain process to obtain a slurry which is fine, uniform and free of coarse particles, and testing the slurry with the fineness of less than 10 mu m and the viscosity of 46 Pa.S. Further filtering with 200 mesh screen, packaging, and storing at-5 deg.C.
On a crystalline silicon solar cell production line, firstly, according to the production process flow of the traditional solar cell, a standard raw material single crystal bare silicon wafer with the size of 156mm x 156mm and the thickness of 180 mu m is cleaned and felted, then, a PN junction is prepared by diffusion, then, a PSG phosphorosilicate glass layer is removed by etching, after a blue diaphragm is prepared by PECVD (plasma enhanced chemical vapor deposition) plating and reflection reducing film, firstly, a back aluminum paste is printed by a screen printing process in a full-page mode, a front silver paste is printed after drying, then, drying is carried out, and sintering is carried out at high temperature and fast speed according to the short time of a cell sintering process to prepare and form an aluminum back field and a front silver electrode, then, the paste is printed, then, the back silver electrode is prepared and formed by curing in an oven at the temperature of 150 ℃ for 30min, and then.
The welding adhesion test is carried out on the monocrystalline silicon solar cell piece according to the following method: the prepared cell piece is horizontally placed, the back silver electrode faces upwards, the photovoltaic special tin-coated copper welding strip processed by the soldering flux is horizontally laid above the back silver electrode and is tightly attached to the center of the back silver electrode in parallel, and one end of the photovoltaic special tin-coated copper welding strip exceeds the edge of the silicon chip. Pressing by using an electric soldering iron welding tip preheated to 350 ℃ and slowly sliding over the welding strip, reversely bending the welding strip beyond the edge of the silicon wafer by 180 degrees, fixing the silicon wafer in a clamp by using a horizontal battery piece tension tester, fixing the welding strip at the folded end on a clamp head of the tester, and performing 180-degree reverse tearing test at a constant speed of 100 mm/min.
Each group of the above tests 3 battery pieces, and the test results are averaged. The weld adhesion was measured to be 3.8N/mm.
Example 2
Weighing 20 parts of spherical silver powder with the particle size D50 of 2.0 mu m, 60 parts of flake silver powder with the particle size D50 of 2.8 mu m, 5114 parts of bisphenol A epoxy resin E, 5 parts of phenyl glycidyl ether serving as an active diluent, 0.77 part of dicyandiamide serving as a curing agent, 0.03 part of 2-ethyl-4-methylimidazole serving as a curing accelerator and 0.2 part of polyamide wax serving as a thixotropic aid in parts by mass, sequentially putting the materials into a planetary stirrer with rotation and revolution functions, uniformly mixing, transferring the uniformly mixed materials to a three-roll grinder, grinding and dispersing according to a certain process to obtain slurry with fine, uniform and no coarse particles, wherein the fineness is less than 12 mu m, and the viscosity is 34Pa.S through testing. Further filtering with 200 mesh screen, packaging, and storing at-5 deg.C.
According to the process flow of the embodiment 1, the baking curing temperature of the back silver paste is 200 ℃, the time is 10min, and after the battery piece is manufactured, the average photoelectric conversion efficiency is 20.72% through testing.
The prepared battery piece was tested for weld adhesion according to the procedure described in example 1, and the weld adhesion was found to be 4.5N/mm.
Example 3
Weighing 15 parts of commercially available spherical silver powder with the particle size D50 of 1.2 mu m, 50 parts of flake silver powder with the particle size D50 of 3.2 mu m, 4425 parts of bisphenol A epoxy resin E, 8.5 parts of active diluent cresol glycidyl ether, 1.16 parts of curing agent dicyandiamide, 0.04 part of curing accelerator 2-phenylimidazole and 0.3 part of thixotropic additive hydrogenated castor oil in parts by mass, sequentially putting the materials into a planetary stirrer with rotation and revolution functions, uniformly mixing, transferring the uniformly mixed materials to a three-roll grinder, grinding and dispersing according to a certain process to obtain a slurry with fine, smooth and uniform appearance and no coarse particles, and testing the slurry with the fineness of less than 8 mu m and the viscosity of 49 Pa.S. Further filtering with 200 mesh screen, packaging, and storing at-5 deg.C.
According to the process flow of the embodiment 1, the baking curing temperature of the back silver paste is 175 ℃, the time is 20min, and after the battery piece is manufactured, the average photoelectric conversion efficiency is 20.65% through testing.
The prepared battery piece was tested for weld adhesion according to the procedure described in example 1, and the weld adhesion was found to be 3.9N/mm.
Example 4
Weighing 10 parts of spherical silver powder with the particle size D50 of 1.5 mu m, 50 parts of flake silver powder with the particle size D50 of 3.6 mu m, 5130 parts of bisphenol A epoxy resin E, 8.7 parts of p-tert-butylphenyl glycidyl ether serving as an active diluent, 0.87 part of dicyandiamide serving as a curing agent, 0.03 part of 2-methylimidazole serving as a curing accelerator, 0.2 part of fumed silica serving as a thixotropic additive and 0.2 part of hydrogenated castor oil in parts by mass, sequentially putting the materials into a planetary stirrer with autorotation and revolution functions, uniformly mixing, transferring the uniformly mixed materials to a three-roll grinder, grinding and dispersing according to a certain process to obtain a slurry with fine, uniform and coarse particles, wherein the fineness is less than 8 mu m through testing, and the viscosity is 32 Pa.S. Further filtering with 200 mesh screen, packaging, and storing at-5 deg.C.
According to the process flow of the embodiment 1, the baking curing temperature of the back silver paste is 160 ℃, the time is 25min, and after the battery piece is manufactured, the average photoelectric conversion efficiency is 20.75% through testing.
The prepared cell was tested for weld adhesion according to the procedure described in example 1, and the weld adhesion was found to be 4.7N/mm.
Example 5
Weighing 20 parts of spherical silver powder with the particle size D50 of 1.8 mu m, 55 parts of flake silver powder with the particle size D50 of 2.5 mu m, 5110 parts of bisphenol A epoxy resin E, 448 parts of E, 5.6 parts of phenyl glycidyl ether serving as an active diluent, 1.07 parts of dicyandiamide serving as a curing agent, 0.03 part of 2-ethyl-4-methylimidazole serving as a curing accelerator, 0.1 part of fumed silica serving as a thixotropic aid and 0.2 part of polyamide wax in parts by mass, sequentially putting the materials into a planetary stirrer with rotation and revolution functions, uniformly mixing, transferring the uniformly mixed materials to a three-roll grinder, grinding and dispersing according to a certain process to obtain slurry with fine and uniform appearance and without coarse particles, and testing the slurry with the fineness of less than 10 mu m and the viscosity of 53 Pa.S. Further filtering with 200 mesh screen, packaging, and storing at-5 deg.C.
According to the process flow of the embodiment 1, the baking curing temperature of the back silver paste is 180 ℃, the time is 15min, and after the battery piece is manufactured, the average photoelectric conversion efficiency is 20.73 percent.
The prepared battery piece was tested for weld adhesion according to the procedure described in example 1, and the weld adhesion was found to be 4.4N/mm.
Example 6
Weighing 15 parts of commercially available spherical silver powder with the particle size D50 of 1.0 mu m, 55 parts of flake silver powder with the particle size D50 of 2.0 mu m, 5110 parts of bisphenol A epoxy resin E, 449 parts of E, 4.6 parts of butanediol diglycidyl ether serving as an active diluent, 5 parts of phenyl glycidyl ether, 0.96 part of dicyandiamide serving as a commercially available curing agent, 0.04 part of 2-phenylimidazole serving as a curing accelerator, 0.2 part of fumed silica serving as a thixotropic aid and 0.2 part of hydrogenated castor oil according to parts by mass, sequentially putting the above materials into a planetary stirrer with rotation and revolution functions, uniformly mixing, transferring the uniformly mixed materials to a three-roll grinder, grinding and dispersing according to a certain process to obtain slurry with fine and uniform appearance and no coarse particles, and testing the fineness of less than 8 mu m and the viscosity of 38 Pa.S. Further filtering with 200 mesh screen, packaging, and storing at-5 deg.C.
According to the process flow of the embodiment 1, the baking curing temperature of the back silver paste is 175 ℃, the time is 20min, and after the battery piece is manufactured, the average photoelectric conversion efficiency is 20.68 percent.
The prepared battery piece was tested for weld adhesion according to the procedure described in example 1, and the weld adhesion was found to be 4.6N/mm.
Comparative example 1
Taking the back silver paste for the conventional crystalline silicon solar cell normally used by a commercial production line, and manufacturing the solar cell by adopting the traditional crystalline silicon solar cell preparation process, wherein the photoelectric conversion efficiency is measured to be 20.33%, and the welding adhesion tension is measured to be 4.2N/mm.
Comparative example 2
Taking the back silver paste for the conventional crystalline silicon solar cell normally used by a commercial production line, and adopting the traditional crystalline silicon solar cell preparation process, wherein the difference is that the back aluminum paste is printed on a full plate firstly, the back silver paste is printed on the back aluminum paste after drying, and the solar cell is manufactured, the photoelectric conversion efficiency is measured to be 20.58%, and the welding adhesion tension is measured to be 0.2N/mm.
Compared with the results of the comparative example, the low-temperature curing type back silver paste is innovatively adopted to replace the traditional high-temperature sintering type back silver paste, and the back silver paste is arranged on the back aluminum layer, so that the BSF layer is formed in the back silver area, the open-circuit voltage and the short-circuit current of the prepared battery are improved, and the final efficiency is improved by an absolute value of about 0.4%. And because the thermosetting epoxy resin with stronger bonding performance is adopted, in the baking and curing process, part of the epoxy resin firstly permeates into the aluminum powder particles with loose structure and no mechanical strength on the back aluminum back surface field, and then is cured to form the epoxy resin-aluminum powder layer with compact structure, so that firm interface contact is formed with the cured back silver electrode, the back silver electrode can be stably attached to the aluminum back surface field, the defect that the traditional back silver paste cannot be attached to the back aluminum back surface field in the traditional process is effectively avoided, the welding adhesion of the finally prepared back silver electrode can be comparable to the welding adhesion of the back silver electrode prepared by the traditional high-temperature sintered back silver paste, and the use requirement of the current battery piece on the welding adhesion is completely met.
The above embodiments are merely illustrative of the technical ideas and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (8)
1. The low-temperature curing type back silver paste for the all-aluminum back surface field crystalline silicon solar cell is characterized by comprising the following components in parts by weight:
2. the low-temperature curing type back silver paste for the all-aluminum back surface field crystalline silicon solar cell according to claim 1, is characterized in that: the surface of the spherical silver powder is coated with a surface treating agent, the purity of the spherical silver powder is more than 99.90%, and the D50 of the spherical silver powder is 0.8-2.0 μm; the purity of the flake silver powder is more than 99.90%, and the D50 of the flake silver powder is 2.0-4.0 μm.
3. The low-temperature curing type back silver paste for the all-aluminum back surface field crystalline silicon solar cell according to claim 1, is characterized in that: the bisphenol A epoxy resin is one or two of E51 type epoxy resin and E44 type epoxy resin.
4. The low-temperature curing type back silver paste for the all-aluminum back surface field crystalline silicon solar cell according to claim 1, is characterized in that: the reactive diluent is one or a mixture of more of butanediol diglycidyl ether, phenyl glycidyl ether, cresol glycidyl ether and p-tert-butylphenyl glycidyl ether.
5. The low-temperature curing type back silver paste for the all-aluminum back surface field crystalline silicon solar cell according to claim 1, is characterized in that: the curing accelerator is one or a mixture of 2-methylimidazole, 2-ethyl-4-methylimidazole and 2-phenylimidazole.
6. The low-temperature curing type back silver paste for the all-aluminum back surface field crystalline silicon solar cell according to claim 1, is characterized in that: the thixotropic auxiliary agent is one or a mixture of more of fumed silica, polyamide wax and hydrogenated castor oil.
7. The preparation method of the low-temperature curing type back silver paste for the all-aluminum back surface field crystalline silicon solar cell as set forth in any one of claims 1 to 6, is characterized by comprising the following steps: accurately weighing the materials in parts by weight according to the formula in a container, uniformly mixing in a planetary high-speed stirrer with rotation and revolution functions, grinding and dispersing on a three-roller grinder until the fineness is below 15 mu m, the appearance is fine, uniform and free of coarse particles, further filtering by using a 200-mesh screen to obtain the low-temperature curing type back silver paste for the all-aluminum back field crystalline silicon solar cell, and freezing and storing at the temperature of-5 ℃.
8. A method for preparing a solar cell piece by using the low-temperature curing type back silver paste for the all-aluminum back surface field crystalline silicon solar cell as defined in any one of claims 1 to 6, is characterized by comprising the following steps: firstly, according to the preparation process flow of the traditional crystalline silicon solar cell, a raw material bare silicon wafer is subjected to front cleaning and texturing, then diffusion is carried out to prepare a PN junction, then a PSG phosphorosilicate glass layer is removed through etching, a blue membrane is prepared through PECVD (plasma enhanced chemical vapor deposition) plating and anti-reflection film plating, the back side aluminum paste is printed through a screen printing process in a full-plate mode, the front side silver paste is printed after drying, then drying is carried out, short-time high-temperature fast sintering and co-sintering are carried out according to the cell sintering process, an aluminum back surface field and a front side silver electrode are prepared, then the low-temperature curing type silver paste for the full-aluminum back surface field crystalline silicon solar cell is printed, and the low-temperature curing type silver paste is cured in.
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| CN111341483A (en) * | 2019-12-31 | 2020-06-26 | 上海匡宇科技股份有限公司 | Heterojunction solar cell conductive silver paste and low-temperature curing method thereof |
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| JP5458862B2 (en) * | 2009-12-17 | 2014-04-02 | 住友金属鉱山株式会社 | Heat-curable silver paste and conductor film formed using the same |
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