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CN109637808B - Novel capacitor and device - Google Patents

Novel capacitor and device Download PDF

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Publication number
CN109637808B
CN109637808B CN201910027582.5A CN201910027582A CN109637808B CN 109637808 B CN109637808 B CN 109637808B CN 201910027582 A CN201910027582 A CN 201910027582A CN 109637808 B CN109637808 B CN 109637808B
Authority
CN
China
Prior art keywords
capacitor
hole structure
polar
dielectric layer
polar plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910027582.5A
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Chinese (zh)
Other versions
CN109637808A (en
Inventor
张海涛
赖之安
王克强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Corebest Microelectronics Wuxi Co ltd
Original Assignee
Corebest Microelectronics Wuxi Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority to CN201910027582.5A priority Critical patent/CN109637808B/en
Publication of CN109637808A publication Critical patent/CN109637808A/en
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Publication of CN109637808B publication Critical patent/CN109637808B/en
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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G2/00Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
    • H01G2/22Electrostatic or magnetic shielding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G2/00Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
    • H01G2/10Housing; Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G2/00Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
    • H01G2/20Arrangements for preventing discharge from edges of electrodes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)

Abstract

The invention discloses a novel capacitor and a novel capacitor device, which relate to the technical field of circuit design and devices and comprise two layers of polar plates, a dielectric layer arranged between the two layers of polar plates and a through hole structure connected with one of the polar plates, wherein the through hole structure is arranged at the edge part of the connected polar plate and surrounds a shielding dielectric layer and the other polar plate; the through holes added on the edge of the polar plate are connected with one polar plate, the dielectric layer is surrounded in the middle, and the edge of the battery is limited and controlled, so that the electromagnetic field shielding of the capacitor is better, certain performances of the capacitor device such as consistency, anti-interference performance and the like are improved, the Q value of the capacitor is improved, the insertion loss is reduced, and the efficiency of the whole circuit is improved.

Description

Novel capacitor and device
Technical Field
The invention relates to the technical field of circuit design and devices, in particular to a novel capacitor and a novel device.
Background
The capacitor is used as a basic electronic component and widely applied to modern circuit systems, including the fields of integrated circuits/MEMS/PCB and the like. The structural design of the capacitor has direct correlation to the performance of the capacitor, and is an important factor for determining the performance parameter of the capacitor.
As shown in fig. 1 and 2, the conventional capacitor design has an edge effect at the edge region of the plate, and the electric field at the edge region is directly connected with the outside due to no restriction and shielding.
Disclosure of Invention
The invention provides a novel capacitor and a novel capacitor device aiming at the problems of the background technology, and the through holes are added around the capacitor electrode plates to provide better constraint and shielding for the electric field of a capacitor medium area and improve the performance of the capacitor.
In order to achieve the above purpose, the invention provides a novel capacitor, which comprises two layers of polar plates, a dielectric layer arranged between the two layers of polar plates and a through hole structure connected with one of the polar plates, wherein the through hole structure is arranged at the edge part of the connected polar plates and surrounds the shielding dielectric layer and the other polar plate.
Preferably, the through hole structure adopts a 3/4 surrounding type through hole structure.
Preferably, the through hole structure comprises a plurality of through holes distributed at the edge of the polar plate.
Preferably, all or part of the via hole is communicated with the connected polar plate.
Preferably, the plate may be a layer structure in an integrated circuit, a package or a layer structure in a PCB.
The invention also provides an electronic device comprising the novel capacitor.
The invention provides a novel capacitor and a novel capacitor device, wherein a through hole added at the edge of a polar plate is connected with the polar plate, a dielectric layer is surrounded in the middle, and the edge of a battery is limited and controlled, so that the electromagnetic field shielding of the capacitor is better, certain performances of a capacitor device such as consistency, anti-interference performance and the like are improved, the Q value of the capacitor is improved, the insertion loss is reduced, and the efficiency of an overall circuit is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to the structures shown in these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a front view of a conventional capacitor;
FIG. 2 is a bottom view of a conventional capacitor;
FIG. 3 is a front view of the novel capacitor in the first preferred embodiment of the present invention;
FIG. 4 is a bottom view of the novel capacitor in the first preferred embodiment of the present invention;
FIG. 5 is a schematic diagram of an electronic device according to a second preferred embodiment of the present invention;
description of the reference numerals:
m1 is an M1 layer polar plate; m2 is an M2 layer polar plate; d1 is a dielectric layer; k1 is a through hole structure;
the achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, if directional indications (such as up, down, left, right, front, and rear … …) are included in the embodiments of the present invention, the directional indications are merely used to explain the relative positional relationship, movement conditions, etc. between the components in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indications are correspondingly changed.
In addition, if there is a description of "first", "second", etc. in the embodiments of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not within the scope of protection claimed in the present invention.
The invention provides a novel capacitor;
in a first preferred embodiment of the present invention, as shown in fig. 3 and 4, the first preferred embodiment of the present invention comprises two layers of polar plates M1 and M2, a dielectric layer D1 disposed between the two layers of polar plates, and a through hole structure K1 connected to one of the layers of polar plates, wherein the through hole structure K1 is disposed at an edge portion of the polar plate M1 to surround the shielding dielectric layer D1 and the polar plate M2; the through hole structure K1 comprises a plurality of through holes distributed at the edge of the polar plate;
in the first preferred embodiment of the present invention, the via structure K1 is a 3/4-surrounding via structure; the via hole can be communicated with the M1 layer polar plate or partially communicated with the M1 layer polar plate, and can be adjusted.
It should be noted that, in this embodiment, the plate M1 is taken as an example for illustration, and of course, the through hole structure K1 may be disposed on the plate M2 to surround the shielding dielectric layer D1 and the plate M1;
the polar plate can be a layer structure in an integrated circuit, a package or a layer structure in a PCB (printed circuit board), and any other space coupling structure;
the invention also provides an electronic device, as shown in fig. 5, comprising the novel capacitor, wherein the novel capacitor is different from the traditional capacitor structure in that the edge area is not treated, and the novel capacitor is provided with a through hole connected with an M1 or M2 layer and is connected with a capacitor plate through the M1 or M2 layer.
The invention surrounds and shields the dielectric medium between the capacitor plates of the D1 layer through the plurality of through holes between the two layers, overcomes the defect that the edge of the areas is not restrained or shielded in the traditional capacitor design, can realize better control of the capacitor characteristics, and comprises the steps of improving the Q value of the capacitor, reducing the insertion loss and the like.
The foregoing description is only of the preferred embodiments of the present invention and is not intended to limit the scope of the invention, and all equivalent structural changes made by the description of the present invention and the accompanying drawings or direct/indirect application in other related technical fields are included in the scope of the invention.

Claims (2)

1. The novel capacitor is characterized by comprising two layers of capacitor plates, a dielectric layer arranged between the two layers of capacitor plates and a through hole structure for connecting one layer of capacitor plates, wherein the through hole structure is arranged at the edge part of the connected capacitor plates and surrounds the shielding dielectric layer and the other layer of capacitor plates, the through hole structure adopts a 3/4 surrounding type through hole structure, the through hole structure comprises a plurality of through holes distributed at the edge of the capacitor plates, and all or part of the through holes are communicated with the connected capacitor plates.
2. An electronic device comprising the novel capacitor of claim 1.
CN201910027582.5A 2019-01-11 2019-01-11 Novel capacitor and device Active CN109637808B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910027582.5A CN109637808B (en) 2019-01-11 2019-01-11 Novel capacitor and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910027582.5A CN109637808B (en) 2019-01-11 2019-01-11 Novel capacitor and device

Publications (2)

Publication Number Publication Date
CN109637808A CN109637808A (en) 2019-04-16
CN109637808B true CN109637808B (en) 2024-02-23

Family

ID=66060665

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910027582.5A Active CN109637808B (en) 2019-01-11 2019-01-11 Novel capacitor and device

Country Status (1)

Country Link
CN (1) CN109637808B (en)

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2012485A (en) * 1978-01-11 1979-07-25 Licentia Gmbh Improvements in electrical capacitors
JPS57206016A (en) * 1981-06-12 1982-12-17 Tdk Electronics Co Ltd Chip type composite through condenser
US5583359A (en) * 1995-03-03 1996-12-10 Northern Telecom Limited Capacitor structure for an integrated circuit
US5907471A (en) * 1997-12-29 1999-05-25 Motorola, Inc. Energy storage device with electromagnetic interference shield
TW564444B (en) * 2002-10-25 2003-12-01 Ind Tech Res Inst Capacitor shielding structure
JP2004071658A (en) * 2002-08-01 2004-03-04 Nec Corp Electronic equipment equipped with chip component and its manufacturing method
US6903918B1 (en) * 2004-04-20 2005-06-07 Texas Instruments Incorporated Shielded planar capacitor
CN102116817A (en) * 2009-12-31 2011-07-06 德律科技股份有限公司 Electrical connection defect detection device
JP2013026160A (en) * 2011-07-25 2013-02-04 Alps Electric Co Ltd Socket for electronic component
CN103943610A (en) * 2014-04-16 2014-07-23 华为技术有限公司 Electronic component packaging structure and electronic device
CN104378912A (en) * 2014-12-05 2015-02-25 浪潮集团有限公司 Design method of PCB (printed circuit board) controllable impedance through holes
RU2600731C1 (en) * 2015-09-30 2016-10-27 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" Electromagnetic interference suppression filter
CN206340453U (en) * 2016-12-12 2017-07-18 石家庄麦特达电子科技有限公司 Two-in-one electric capacity
CN107633128A (en) * 2017-09-15 2018-01-26 北京华大九天软件有限公司 The layout and Wiring method of MOM capacitor, MOM capacitor array and MOM capacitor array
CN209357620U (en) * 2019-01-11 2019-09-06 广西芯百特微电子有限公司 A kind of novel capacitor and device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
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US20030234415A1 (en) * 2002-06-24 2003-12-25 Hwey-Ching Chien Scalable three-dimensional fringe capacitor with stacked via
US20050145405A1 (en) * 2004-01-02 2005-07-07 Chen Chia P. Electric member having shielding device
US7154734B2 (en) * 2004-09-20 2006-12-26 Lsi Logic Corporation Fully shielded capacitor cell structure
KR100640065B1 (en) * 2005-03-02 2006-10-31 삼성전자주식회사 MIM capacitor comprising ground shield layer
US7456459B2 (en) * 2005-10-21 2008-11-25 Georgia Tech Research Corporation Design of low inductance embedded capacitor layer connections
US7687836B2 (en) * 2007-05-24 2010-03-30 Micron Technology, Inc. Capacitance noise shielding plane for imager sensor devices
DE102012210033B4 (en) * 2012-06-14 2023-02-02 Robert Bosch Gmbh Component with via and method of manufacture
US20140049872A1 (en) * 2012-08-16 2014-02-20 Himax Technologies Limited Metal-oxide-metal capacitor able to reduce area of capacitor arrays

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2012485A (en) * 1978-01-11 1979-07-25 Licentia Gmbh Improvements in electrical capacitors
JPS57206016A (en) * 1981-06-12 1982-12-17 Tdk Electronics Co Ltd Chip type composite through condenser
US5583359A (en) * 1995-03-03 1996-12-10 Northern Telecom Limited Capacitor structure for an integrated circuit
US5907471A (en) * 1997-12-29 1999-05-25 Motorola, Inc. Energy storage device with electromagnetic interference shield
JP2004071658A (en) * 2002-08-01 2004-03-04 Nec Corp Electronic equipment equipped with chip component and its manufacturing method
TW564444B (en) * 2002-10-25 2003-12-01 Ind Tech Res Inst Capacitor shielding structure
US6903918B1 (en) * 2004-04-20 2005-06-07 Texas Instruments Incorporated Shielded planar capacitor
CN102116817A (en) * 2009-12-31 2011-07-06 德律科技股份有限公司 Electrical connection defect detection device
JP2013026160A (en) * 2011-07-25 2013-02-04 Alps Electric Co Ltd Socket for electronic component
CN103943610A (en) * 2014-04-16 2014-07-23 华为技术有限公司 Electronic component packaging structure and electronic device
CN104378912A (en) * 2014-12-05 2015-02-25 浪潮集团有限公司 Design method of PCB (printed circuit board) controllable impedance through holes
RU2600731C1 (en) * 2015-09-30 2016-10-27 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" Electromagnetic interference suppression filter
CN206340453U (en) * 2016-12-12 2017-07-18 石家庄麦特达电子科技有限公司 Two-in-one electric capacity
CN107633128A (en) * 2017-09-15 2018-01-26 北京华大九天软件有限公司 The layout and Wiring method of MOM capacitor, MOM capacitor array and MOM capacitor array
CN209357620U (en) * 2019-01-11 2019-09-06 广西芯百特微电子有限公司 A kind of novel capacitor and device

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Address after: No. 6, Huaqing Innovation Park, Huishan District, Wuxi City, Jiangsu Province, 214000

Applicant after: Corebest Microelectronics (Wuxi) Co.,Ltd.

Address before: The annex of Yuegui Building, the junction of the two provinces and districts, Wuzhou City, Wuzhou City, Guangxi Zhuang Autonomous Region, 543000

Applicant before: GUANGXI XINBAITE MICROELECTRONICS Co.,Ltd.

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