CN109634013A - 显示面板 - Google Patents
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- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
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- 229910004205 SiNX Inorganic materials 0.000 description 3
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- 229910045601 alloy Inorganic materials 0.000 description 3
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- 238000000151 deposition Methods 0.000 description 3
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- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
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- WABPQHHGFIMREM-FTXFMUIASA-N lead-202 Chemical compound [202Pb] WABPQHHGFIMREM-FTXFMUIASA-N 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
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- 229910052719 titanium Inorganic materials 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13454—Drivers integrated on the active matrix substrate
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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Abstract
本发明公开了一种显示面板，其特征在于：所述显示面板包括：一透光基板，所述透光基板上具有一半导体膜层结构，所述半导体膜层结构形成一主动显示区；多个数据线，设置于所述透光基板上的所述主动显示区上；多个扫描线，设置于所述透光基板上的所述主动显示区上，幷且所述多个扫描线垂直于所述多个数据线；及多个引线，电性连接对应的所述多个扫描线，幷且所述多个引线平行于所述多个数据线。
Description
技术领域
本发明涉及显示技术领域，特别是涉及一种显示面板。
背景技术
随着液晶面板技术的不断更新，小尺寸面板，特别是4-7寸的手机面板，正逐渐朝着超窄边框乃至无边框化发展，传统显示面板技术通过压缩阵列基板行驱动(Gate DriverOn Array,GOA)电路尺寸、缩小应用触控与显示驱动集成芯片(Touch and Display DriverIntegration，TDDI)的IC芯片以及缩小走线间的距离等方式来达成缩小边框，目前边框的宽度已经接近了0.7mm至0.8mm，然而为了保证GOA有效工作、面板的信赖性测试及各种信号线之间相互隔断，边框(特别是侧向边框)的压缩已经接近了极限。
故，有必要提供一种窄边框显示面板，以解决现有技术所存在的问题。
发明内容
本发明的目的在于提供一种显示面板，不但可以进一步的缩小侧向边框的宽度，还可以与现行制程工艺相容，进而降低后续沿生的改造成本或生产成本。
为达成本发明的前述目的，本发明提供一种显示面板，所述显示面板包括：
一透光基板，所述透光基板上具有一半导体膜层结构，所述半导体膜层结构形成一阵列基板行驱动区(GOA)、一主动显示区(AA)及一集成电路区(IC)，所述阵列基板行驱动区与所述集成电路区相对，幷且所述主动显示区位于所述阵列基板行驱动区及所述集成电路区之间；
多个数据线，设置于所述透光基板上的所述主动显示区上；
多个扫描线，设置于所述透光基板上的所述主动显示区上，幷且所述多个扫描线垂直于所述多个数据线；及
多个引线，电性连接对应的所述多个扫描线与所述阵列基板行驱动区，幷且所述多个引线平行于所述多个数据线。
根据本发明一实施例，至少一个所述多个引线设置于相邻的两个所述数据线之间。
根据本发明一实施例，所述显示面板还包括一绝缘层及一上透明导电层，所述绝缘层设置于所述多个引线上，所述上透明导电层设置于所述绝缘层上幷且电性连接所述数据线。
根据本发明一实施例，所述多个引线及所述透明导电层是由一透明导电材料所制成。
根据本发明一实施例，多个引线的其中之一不与所述多个数据线之一重合。
本发明还提供一种显示面板，所述显示面板包括：
一透光基板，所述透光基板上具有一半导体膜层结构，所述半导体膜层结构形成一主动显示区；
多个数据线，设置于所述透光基板上的所述主动显示区上；
多个扫描线，设置于所述透光基板上的所述主动显示区上，幷且所述多个扫描线垂直于所述多个数据线；及
多个引线，电性连接对应的所述多个扫描线，幷且所述多个引线平行于所述多个数据线。
根据本发明一实施例，所述半导体膜层结构包括：一第一金属层、一层间绝缘层、一第二金属层及一平坦化层，所述层间绝缘层设置于所述第一金属层与所述第二金属层之间，所述平坦化层设置于所述第二金属层上，且所述平坦化层具有多个导电孔。
根据本发明一实施例，所述多个扫描线是所述第一金属层经图案化制程所形成，所述多个数据线是所述第二金属层经图案化制程所形成，所述多个引线通过所述多个导电孔电性连接对应的所述多个扫描线。
根据本发明一实施例，所述多个引线是由一透明导电材料所制成。
根据本发明一实施例，至少一个所述多个引线设置于相邻的两个所述数据线之间，幷且多个引线的其中之一不与所述多个数据线之一重合。
本发明的有益效果为：利用图形化的透明导电材料作为引线，传递扫描线的信号，透明导电的引线不需要额外绕至边框，进而实现缩小显示面板的侧向边框。而且与现行的制程工艺高度相容，不需要增加额外的光罩及相关的光刻工艺步骤，可以降低后续沿生的改造成本或生产成本。此外，引线不与数据线重合还可以有效地降低寄生电容。
附图说明
为让本发明的上述内容能更明显易懂，下文特举优选实施例，并配合所附图式，作详细说明如下：
图1是本发明一实施例的一种显示面板的配置示意图。
图2是图1实施例的局部放大视图。
图3是图2实施例A-A线段的截面图。
具体实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。再者，本发明所提到的方向用语，例如上、下、顶、底、前、后、左、右、内、外、侧面、周围、中央、水平、横向、垂直、纵向、轴向、径向、最上层或最下层等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
请参照图1及图2，图1是本发明一实施例的一种显示面板的配置示意图。图2是图1实施例的局部放大视图。本实施例提供了一种显示面板100，所述显示面板100包括：一透光基板110、多个扫描线161、162、163、多个数据线181、182、183及多个引线201、202、203。
所述透光基板110上具有一半导体膜层结构，所述半导体膜层结构形成一阵列基板行驱动区(GOA)10、一主动显示区(AA)20及一集成电路区(IC)30，所述阵列基板行驱动区10与所述集成电路区30相对，幷且所述主动显示区20位于所述阵列基板行驱动区10及所述集成电路区30之间。依图1实施例的方向来说明，所述阵列基板行驱动区10与所述集成电路区30隔着所述主动显示区20上下相对。所述透光基板110可以是玻璃基板或是由其它透光材料所制程的基板。
所述多个数据线181、182、183设置于所述透光基板110上的所述主动显示区20上。所述多个扫描线161、162、163设置于所述透光基板110上的所述主动显示区20上，幷且所述多个扫描线161、162、163垂直于所述多个数据线181、182、183。所述多个引线201、202、203电性连接对应的所述多个扫描线161、162、163与所述阵列基板行驱动区10，幷且所述多个引线平行201、202、203于所述多个数据线181、182、183。如图2所示，所述引线201、202、203分别设置于相邻的两个所述数据线181、182、183之间。
请参照图3，所述透光基板110上的所述半导体膜层结构依序包括：一遮光层120、一缓冲层130、一半导体层140、一栅极绝缘层150、一第一金属层160、一层间绝缘层170、一第二金属层180、一平坦化层190、一下透明导电层200、一绝缘层210及一上透明导电层220。
所述遮光层120设置于所述透光基板110上，遮光层120可以由金属材料所制成，例如Mo、Al、Cu、Ti或其合金。所述缓冲层130可以通过沈积技术设置于所述透光基板110及所述遮光层120上。所述缓冲层130可以是SiOx、SiNx单层薄膜或叠层结构薄膜。所述半导体层140可以通过沈积技术形成于所述缓冲层130上。所述半导体层140可以通过图形化制程来定义有源区。所述半导体层140的材料可以是多晶硅或其他适合的材料。所述栅极绝缘层150通过沈积技术设置于所述半导体层140上。所述栅极绝缘层150可以是SiOx、SiNx薄膜或叠层结构薄膜。
所述第一金属层160设置于所述栅极绝缘层150上，幷且所述第一金属层160经图案化制程形成所述多个扫描线161、162、163。所述第一金属层160的材料可以包含Mo、A1、Cu或者其合金。所述层间绝缘层170设置于所述第一金属层160上，所述层间绝缘层170可以是SiOx、SiNx薄膜或叠层结构薄膜。所述第二金属层180设置于所述层间绝缘层170上，所述第二金属层180经图案化制程形成所述多个数据线181、182、183。所述第二金属层180的材料可以包含Mo、A1、Cu或者其合金。
所述平坦化层190设置于所述第二金属层180及所述层间绝缘层170上。所述平坦化层190具有多个导电孔192、194。
所述下透明导电层200设置在所述平坦化层190上，幷且所述下透明导电层200经图案化制程形成所述多个引线201、202、203。如图3所示，所述引线202通过所述导电孔192电性连接对应的所述扫描线162。此外，所述引线202不与所述数据线182重合。所述下透明导电层200是由一透明导电材料所制成，例如氧化铟锡(ITO)或是其他具有类似特性的透明导电材料。
所述绝缘层210设置于所述下透明导电层200的所述多个引线201、202、203上，所述上透明导电层220设置于所述绝缘层210上幷且电性连接所述数据线181、182、183。如图3所示，所述上透明导电层220通过所述导电孔194电性连接所述多个数据线的其中一个。所述绝缘层210也可以包括一钝化层。所述上透明导电层220是由一透明导电材料所制成，例如氧化铟锡(ITO)或是其他具有类似特性的透明导电材料。
本文中所述半导体膜层结构可以透过图案化制程形成，例如光刻技术搭配蚀刻技术，或相似可以应用在半导体产业中的技术。而半导体膜层结构可以通过气相沉积、蒸镀、溅镀等技术形成膜层。
依图1实施例的方向来说明，利用图案化后的所述下透明导电层200所形成所述多个引线201、202、203作为所述多个扫描线161、162、163连接到所述所述阵列基板行驱动区10的走线；再加上所述多个引线201、202、203与所述多个数据线181、182、183平行，藉此将所述阵列基板行驱动区10及所述集成电路区30配置在所述主动显示区20上方及下方。如此一来，可以大幅地降低所述显示面板100侧向边框(左右边框)的宽度，实现极窄边框的显示面板。
本发明的有益效果为：利用图形化的透明导电材料作为引线，传递扫描线的信号，透明导电的引线不需要额外绕至边框，进而实现缩小显示面板的侧向边框。而且与现行的制程工艺高度相容，不需要增加额外的光罩及相关的光刻工艺步骤，可以降低后续沿生的改造成本或生产成本。此外，引线不与数据线重合还可以有效地降低寄生电容。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例幷非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。
Claims (10)
1.一种显示面板，其特征在于：所述显示面板包括：
一透光基板，所述透光基板上具有一半导体膜层结构，所述半导体膜层结构形成一阵列基板行驱动区、一主动显示区及一集成电路区，所述阵列基板行驱动区与所述集成电路区相对，幷且所述主动显示区位于所述阵列基板行驱动区及所述集成电路区之间；
多个数据线，设置于所述透光基板上的所述主动显示区上；
多个扫描线，设置于所述透光基板上的所述主动显示区上，幷且所述多个扫描线垂直于所述多个数据线；及
多个引线，电性连接对应的所述多个扫描线与所述阵列基板行驱动区，幷且所述多个引线平行于所述多个数据线。
2.如权利要求1所述的显示面板，其特征在于：至少一个所述多个引线设置于相邻的两个所述数据线之间。
3.如权利要求1所述的显示面板，还包括一绝缘层及一上透明导电层，所述绝缘层设置于所述多个引线上，所述上透明导电层设置于所述绝缘层上幷且电性连接所述数据线。
4.如权利要求1所述的显示面板，其特征在于：所述多个引线及所述透明导电层是由一透明导电材料所制成。
5.如权利要求1所述的显示面板，其特征在于：多个引线的其中之一不与所述多个数据线之一重合。
6.一种显示面板，其特征在于：所述显示面板包括：
一透光基板，所述透光基板上具有一半导体膜层结构，所述半导体膜层结构形成一主动显示区；
多个数据线，设置于所述透光基板上的所述主动显示区上；
多个扫描线，设置于所述透光基板上的所述主动显示区上，幷且所述多个扫描线垂直于所述多个数据线；及
多个引线，电性连接对应的所述多个扫描线，幷且所述多个引线平行于所述多个数据线。
7.如权利要求6所述的显示面板，其特征在于：所述半导体膜层结构包括：一第一金属层、一层间绝缘层、一第二金属层及一平坦化层，所述层间绝缘层设置于所述第一金属层与所述第二金属层之间，所述平坦化层设置于所述第二金属层上，且所述平坦化层具有多个导电孔。
8.如权利要求7所述的显示面板，其特征在于：所述多个扫描线是所述第一金属层经图案化制程所形成，所述多个数据线是所述第二金属层经图案化制程所形成，所述多个引线通过所述多个导电孔电性连接对应的所述多个扫描线。
9.如权利要求8所述的显示面板，其特征在于：所述多个引线是由一透明导电材料所制成。
10.如权利要求9所述的显示面板，其特征在于：至少一个所述多个引线设置于相邻的两个所述数据线之间，幷且多个引线的其中之一不与所述多个数据线之一重合。
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| WO2020155469A1 (zh) * | 2019-01-30 | 2020-08-06 | 武汉华星光电半导体显示技术有限公司 | 显示面板及其制作方法 |
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