CN109597276A - For preventing the blank mask and photomask of electrostatic breakdown - Google Patents
For preventing the blank mask and photomask of electrostatic breakdown Download PDFInfo
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- CN109597276A CN109597276A CN201811140761.1A CN201811140761A CN109597276A CN 109597276 A CN109597276 A CN 109597276A CN 201811140761 A CN201811140761 A CN 201811140761A CN 109597276 A CN109597276 A CN 109597276A
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- film
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- blank mask
- metal
- electrolemma
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
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- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The present invention relates to a kind of for preventing the blank mask and photomask of electrostatic breakdown.Blank mask has at least one layer of metallic compound film to form optical mask pattern on a transparent substrate.Metallic compound film includes: metal film is formed in transparent substrates；And non-electrolemma, it is formed on metal film, non-electrolemma prevents the destruction to pattern caused by the static discharge because of caused by the difference of the charge gathered on the surface between pattern.The electrostatic caused by contacting during photoetching process repeatedly or processing between the metallic compound film figure for making photomask possibly through the resistance component improved in the metallic compound film for forming blank mask in the case where no additional film manufacturing process minimizes to prevent the destruction to transfer pattern, and also can avoid correcting and remanufacturing the cost of photomask.
Description
Technical field
The present invention relates to a kind of for preventing the blank mask and photomask of electrostatic breakdown, and more specifically to one
The blank mask and photomask for preventing electrostatic breakdown are planted, the blank mask and photomask can be handled in photoetching and photomask
Period prevents the destruction to pattern caused by the electrostatic by caused by the metal compound article pattern of formation photomask.
Background technique
Semiconductor integrated circuit (big rule are manufactured by photoetching (a kind of technique for shifting pattern to use photomask)
Mould integrates (large-scale integration；LSI)) device or flat-panel monitor (flat-panel display；FPD)
Device.
Blank mask be usually by compound silica glass system at transparent substrates, wherein formed contain metal material and photoetching
The metal film or metallic compound film of glue film.Photomask have by make blank mask it is thin-film patterning be formed by metal or
Metal compound article pattern.Depending on required optical characteristics, film includes optical screen film, anti-reflective film, phase shift film, half transmitting
Film, reflectance coating etc..Blank mask includes at least one of above film, and by shape needed for being melted into these film figures come
Manufacture the photomask with transfer pattern.
Photomask is to transfer the pattern onto target substrate by contact or non-contact photolithography and form apparatus structure.?
In this case, due to the Reusability of photomask, electrostatic charge gather on the photomask during photoetching process, and if
Charge difference between pattern is more than breakdown voltage, then the pattern on the electrostatic damage photomask generated between pattern.Specifically
It says, pattern is more independent, and the potential difference of adjacent pattern is higher, causes the damage of static discharge bigger.This, which causes to correct, has
The problem of having damaged the photomask of pattern or having abandoned photomask.
In conventional blank mask and photomask, formed on the top or bottom of metal-containing thin film for facilitating charge to move
Dynamic transparent conductive film, to reduce electrostatic accumulation.However, the use of conductive film causes, due to the shape in entire transparent substrates
At conductive film, so the transmission of the light for exposure reduces, and then exposure efficiency is inevitably reduced.In addition, this method
It is required that being used to form the additional technique of transparent conductive film, this causes inevitable because of additional equipment and caused by the process time
Manufacturing cost rises.
Summary of the invention
The present invention provides a kind of for preventing the blank mask and photomask of electrostatic breakdown, the blank mask and photomask
It can prevent from being led by the electrostatic in photoetching by preventing charge from gathering on the surface of the metal compound article pattern of blank mask
The Pattern damage of cause.
The present invention also provides a kind of for preventing the blank mask and photomask of electrostatic breakdown, and the blank mask and light are covered
Mo Keyin does not reduce the transmission of photomask and keeps exposure efficiency, and repairing of being caused of the pattern collapses caused by avoiding by electrostatic
Just with remanufacture photomask unnecessary quality cost.
It is according to the present invention to be used to prevent the blank mask of electrostatic breakdown that there is at least one layer of metallization on a transparent substrate
To form optical mask pattern, metallic compound film includes compound film: metal film is formed in transparent substrates；And non-electrolemma,
It is formed on metal film, the non-electrolemma prevents the electrostatic caused by the difference because of the charge gathered on the surface between pattern
Destruction to pattern caused by electric discharge.
Metallic compound film is made by forming non-electrolemma above and below metal film, or the electrolemma structure by non-
At.
Metallic compound film has 1,000 ohm or the sheet resistance greater than 1,000 ohm.
Metallic compound film has relative to the exposure light with the combined wave length comprising i ray, h ray and g ray
There is 2.5 to 5.0 optical density (OD).
Metallic compound film is by following chromium (chromium；Cr) one of compound is constituted: chromium oxide (CrO), nitridation
Chromium (CrN), chromium carbide (CrC), nitrogen oxidation chromium (CrON), oxidation of coal chromium (CrCO), carbon chromium nitride (CrCN) and the carbonization of nitrogen oxygen
Chromium (CrCON).
Non- electrolemma must contain aerobic (oxygen；O), and oxygen-containing (O) of metallic compound film partially occupies entire film thickness
The 50% of degree.
Non- electrolemma has oxygen (O) for 1 atom % to 90 atom %, nitrogen (nitrogen；N) former for 0 atom % to 90
Sub- % and carbon (carbon；C) the composition for being 0 atom % to 50 atom %.
Metal film is at least one layer of film, includes one of the following or multiple: optical screen film, anti-reflective film, phase shift film, half
Transmission film, hard mask film, reflectance coating and conductive film.
Detailed description of the invention
Fig. 1 is the cross section of the blank mask for preventing electrostatic breakdown of the first exemplary embodiment according to the present invention
Figure.
Fig. 2 is the cross-sectional view of the photomask for preventing electrostatic breakdown manufactured by using the blank mask of Fig. 1.
Fig. 3 is the cross section of the blank mask for preventing electrostatic breakdown of the second exemplary embodiment according to the present invention
Figure.
Fig. 4 is the cross section of the blank mask for preventing electrostatic breakdown of third exemplary embodiment according to the present invention
Figure.
Drawing reference numeral explanation
100,300,400: blank mask；
102: transparent substrates；
104: metal film；
104a, 106a: patterning stacked structure；
106: non-electrolemmas；
108: metallic compound film；
110,120: pattern；
200: photomask.
Specific embodiment
Embodiment according to the present invention for preventing the blank mask of electrostatic breakdown and photomask is for manufacturing plate
The blank mask and photomask of display (FPD) device and semiconductor device, the flat display devices include liquid crystal display
Device (liquid-crystal displays；LCD), plasma display panel (plasma display panels；PDP) and have
Machine light emitting diode (organic light-emitting diodes；) and semiconductor device OLED.For using blank
The exposure technology that mask forms transfer pattern on the photomask refers to common exposure technology.
Fig. 1 is the cross section of the blank mask for preventing electrostatic breakdown of the first exemplary embodiment according to the present invention
Figure.Fig. 2 is the cross-sectional view of the photomask for preventing electrostatic breakdown manufactured by using the blank mask of Fig. 1.
With reference to Fig. 1, blank mask 100 according to the present invention includes transparent substrates 102 and is stacked in transparent substrates 102
At least one layer of metallic compound film 108.
Transparent substrates 102 are that (for example) one side is 300 millimeters or the gular transparent substrate greater than 300 millimeters, and can be with
It is compound silica glass substrate, sodium calcium (soda-lime) glass substrate, alkali-free glass substrate, low-expansion glass substrate etc..
Depending on required optical characteristics, metallic compound film 108 is at least one of the following: optical screen film resists
Reflectance coating, phase shift film, semi-transmissive film, hard mask film, reflectance coating, conductive film and non-electrolemma.By making that there is this structure
Blank mask 100 patterning manufacture the photomask 200 of Fig. 2.
Meanwhile in the exposure technology for manufacturing FPD device and semiconductor device, by following mechanism by photomask
Electrostatic is generated between transfer pattern 110 made of metallic compound in 200 transparent substrates 102 and transfer pattern 120.
Material usually has the particle of forming material, free-moving free electron and (former by particle between particles
Son and molecule) between electric power constraint bound electron.The free electron for promoting electrostatic to generate passes through luminous energy, thermal energy, kinetic energy etc.
It is discharged from particle.Herein, it is released from the least energy as needed for electronics and is known as work function.If two different materials (A and B)
Move close to each other, then due to the work function difference between two materials and there are contact electromotive forces at contact surface.Also
It is to say, if two materials As and B are moved close to each other, electronics can be moved to another surface from a surface.Therefore,
Surface with more high work function has negative electrical charge (-), and has positive charge (+) --- example with the surface of more low work function
Such as, surface A has positive charge (+), and surface B has negative electrical charge (-).
Different materials has different work function values, and depends on material and touch therewith or the class of disconnected material
Type generates positive charge or negative electrical charge.These materials arrange in the table of referred to as triboelectric series (triboelectric series)
Out.Since work function changes with moisture, the impurity presence or absence etc. being adsorbed on material surface, so these materials exist
Position in triboelectric series is not always identical.Phase of the electrification as caused by friction or frictional force by the material in triboelectric series
Position is influenced.If two objects are touched or rubbed together, the material of (+) side on approximating sequence will obtain more
The material of (-) side on positive charge and approximating sequence will obtain more negative electrical charge.Two materials are apart on triboelectric series
It is remoter, more being easy to produce electrostatic and the quantity of electric charge is bigger.
If in the presence of dry type static state electrify: triboelectrification, stripping electrification (detachment electrification),
Flowing electrification, exudation electrification (effusion electrification), collision electrification, destructive electrification etc..Triboelectrification is
It is a kind of separation of charge and by the friction of two objects or by the contact position of the object caused by rubbing be displaced come
The phenomenon that rearranging and generating electrostatic.Stripping electrification is a kind of phenomenon, wherein due to when pulling open the object being bonded together
Separation of charge and generate electrostatic.In stripping electrification, the amount of electrostatic is with the bonding force between contact area, contact surface, stripping
Change from speed etc., separation electrification is usually than generating more electrostatic by friction.Flowing electrification is a kind of when in pipeline or class
Like in object transport fluid when generate electrostatic as.In this case, the movement speed of fluid significantly affects electrostatic generation.It oozes out
Electricity is a kind of by rubbing to generate electrostatic when oozing out when powder, fluid and gas from the opening with small cross-sectional area
Phenomenon.Collision electrification is a kind of production when Rapid contact occurs between particle (such as powder) or between particle and solid or separates
The phenomenon that raw electrostatic.Destructiveness electrification is a kind of due to separation of charge or positive charge when object (such as solid or powder) damages
The phenomenon that generating electrostatic with the imbalance of negative electrical charge.
In general, can reduce for example, by contact surface, dielectric coefficient adjustment, sheet resistance reduces, separating rate adjusts, empty
Gas humidity regulation and a variety of methods of ground connection reduce electrostatic charge.It is surface that contact surface reduction, which allows for static electrification,
Phenomenon and the contact surface by reducing separated solid are come the method that reduces the amount of electrification charge.Dielectric coefficient adjustment be due to
Static state electrification depends on work function so the method for being carefully chosen the material without work function difference between the materials.With low
The material of dielectric coefficient is usually negatively charged, and the material with high-dielectric coefficient is usually positively charged.Sheet resistance reduces
Sheet resistance depending on object is by reducing resistance come the method for the charge as caused by separation non-conducting object that dissipates.Air
Humidity regulation is the method using the sheet resistance changed with the humidity in air.Relatively low humidity typically results in air
High surface resistance.Ground connection is so that the method that the electrostatic being stored on object flow to ground, in this case when object is
With 106Ohm meter or be lower than 106Electrostatic is normally grounded when the conductor of the resistivity of ohm meter.
With reference to Fig. 2, the pattern of various shapes 110 and pattern 120 that photomask 200 has surface area different, and electrostatic is put
Electricity due to the charge gathered on the surface between pattern 110 and pattern 120 difference and occur, cause to 110 He of pattern
The destruction of pattern 120.
In the present invention, the mode as adjustment dielectric coefficient forms the metallic compound film of blank mask by increasing
Resistance component in 108 reduces the amount of electrification charge.In addition, being covered by reducing different size of optical mask pattern 110 and light
The difference of charge between the surface of mould pattern 120 increases breakdown voltage, and then the pattern collapses caused by solving by electrostatic
Problem.
With reference to Fig. 1, metallic compound film 108 includes metal film 104 and non-electrolemma 106.
Herein, depending on required optical characteristics, metal film 104 can be at least one layer of film, in following
It is one or more: optical screen film, anti-reflective film, phase shift film, semi-transmissive film, hard mask film, reflectance coating and conductive film.According to this
The example metal film of invention can be the optical screen film for shielding the exposure light used in photoetching.
Non- electrolemma 106 to by improve resistance component make photomask transfer pattern 110 and transfer pattern 120 it
Between by during photoetching process contact repeatedly or handle caused by electrostatic minimize prevent to transfer pattern 110 and transfer
The destruction of pattern 120.
It is formed by using the sputtering technology of the target made of metal or metallic compound comprising metal film 104 and non-
The metallic compound film 108 of electrolemma 106.Pass through the non-anti-of such as oxygen (O), nitrogen (N) and the carbon (C) that introduce in sputtering technology
Type and the quantity of gas and reaction gas are answered to control the optics, physics and chemical attribute of metallic compound film 108.
Metal film 104 according to the present invention and non-electrolemma 106 can be made of a kind of compound, the compound contain with
One of lower metal is a variety of: aluminium (aluminum；Al), cobalt (cobalt；Co), tungsten (tungsten；W), molybdenum
(molybdenum；Mo), vanadium (vanadium；V), palladium (palladium；Pd), titanium (titanium；Ti), platinum (platinum；
Pt), manganese (manganese；Mn), iron (iron；Fe), nickel (nickel；Ni), cadmium (cadmium；Cd), zirconium (zirconium；
Zr), magnesium (magnesium；Mg), lithium (lithium；Li), selenium (selenium；Se), copper (copper；Cu), yttrium (yttrium；
Y), sulphur (sulfur；S), indium (indium；In), tin (tin；Sn), boron (boron；B), beryllium (beryllium；Be), sodium
(sodium；Na), tantalum (tantalum；Ta), hafnium (hafnium；) and niobium (niobium Hf；Nb), and further containing following
One of light element is a variety of: nitrogen (N), oxygen (O), carbon (C), boron (B) and hydrogen (hydrogen；H) or the metal film and
The non-electrolemma can by addition to one of above metal or it is a variety of other than the also metal silicide containing silicon constitute, or can be by
Also the metal-silicide compound containing the above light element is constituted other than metal silicide.For example, according to the present invention
Metal film 104 and non-electrolemma 106 be made of one of following chromium (Cr) compound: chromium oxide (CrO), chromium nitride
(CrN), chromium carbide (CrC), nitrogen oxidation chromium (CrON), oxidation of coal chromium (CrCO), carbon chromium nitride (CrCN) and nitrogen oxygen chromium carbide
(CrCON)。
For metal film 104 and non-electrolemma 106, nitrogen (N) content and oxygen content, resistance characteristic and light shield are depended on
Attribute is inversely proportional to one another.Therefore, it is necessary to use the different constituents of gas with various or same gas formed metal film 104 (that is,
Optical screen film) He Feiqi electrolemma 106.
As described above, metal film 104 by addition to metal also further containing one of following light element or
A variety of compounds is constituted: nitrogen (N), oxygen (O), carbon (C), boron (B) and hydrogen (H).If metal film 104 is optical screen film, that
The composition of the metal film 104 can be the nitrogen (N) of the oxygen (O) of 0 atom % to 50 atom %, 0 atom % to 50 atom %
And 0 atom % to 50 atom % carbon (C).
Preferably, non-electrolemma 106 is by that must contain aerobic (O) so that electrification minimizes and further contains following light element
One of or a variety of compound constitute: nitrogen (N), carbon (C), boron (B) and hydrogen (H).In this case, non-electrolemma
106 can to have oxygen (O) be 1 atom % to 90 atom %, nitrogen (N) is 0 atom % to 90 atom % and carbon (C) is 0 atom %
To the composition of 50 atom %.
Metal film 104 and non-electrolemma 106 can have following structure in one: with uniform constituent monofilm,
Constituent or the different continuous monofilm of constituent ratio, the multilayer film with same composition object and tool there are two or be greater than two
A layer of multilayer film or continuous film with different constituents.Herein, sputtering technology in the presence of plasma can be passed through
Period changes such as reaction gas, power and the state-variable of pressure to form continuous film.
Depending on required film type, metal film 104 has 50 angstroms to 1,000 angstrom of thickness, and non-electrolemma 106
With 500 angstroms to 2,500 angstroms of thickness.For example, if metal film 104 to be used as to the optical screen film of shielding exposure light, that
The stacked structure of metal film 104 or metal film 104 and non-electrolemma 106 is penetrated comprising i ray, h ray and g relative to having
The optical density (OD) for exposing light and having 2.5 to 5.0 of the combined wave length of line, and there is the thickness for meeting this optical density (OD).
The metal depicted in the stacked structure or Fig. 2 of depicted metal film 104 and non-electrolemma 106 in Fig. 1
The patterning stacked structure 104a of film and the non-electrolemma and patterning stacked structure 106a has 1,000 ohm or higher than 1,
000 ohm of sheet resistance.Therefore, the Pattern damage caused by can making by electrification minimizes.
Fig. 3 is the cross section of the blank mask for preventing electrostatic breakdown of the second exemplary embodiment according to the present invention
Figure.
Blank mask 300 according to this exemplary embodiment may include transparent substrates 102, the shape in transparent substrates 102
At metal film 104 and non-electrolemma 106 being formed above and below the 104 of metal film.
Such as in the foregoing example embodiment of Fig. 1, metal film 104 is by addition to metal also further containing following light
One of element or a variety of compounds are constituted: nitrogen (N), oxygen (O), carbon (C), boron (B) and hydrogen (H).If metal film 104
It is optical screen film, then the composition of the metal film 104 can be the oxygen (O) of 0 atom % to 50 atom %, 0 atom % to 50
Carbon (C) of the nitrogen (N) and 0 atom % of atom % to 50 atom %.Preferably, non-electrolemma 106 by must contain aerobic (O) with
Electrification is set to minimize and further constitute containing one of following light element or a variety of compounds: nitrogen (N), carbon (C), boron
(B) and hydrogen (H).In this case, non-electrolemma 106 can have that oxygen (O) is 1 atom % to 90 atom %, nitrogen (N) is 0
The composition that atom % to 90 atom % and carbon (C) are 0 atom % to 50 atom %.
Depending on required film type, metal film 104 has 50 angstroms to 2,000 angstrom of thickness, and non-electrolemma 106
With 500 angstroms to 3,000 angstroms of thickness.The stacked structure or described of depicted metal film 104 and non-electrolemma 106 in Fig. 1
The patterning stacked structure of metal film and the non-electrolemma has 1,000 ohm or the sheet resistance higher than 1,000 ohm.Cause
This, the Pattern damage caused by can making by electrification minimizes.
Fig. 4 is the cross section of the blank mask for preventing electrostatic breakdown of third exemplary embodiment according to the present invention
Figure.
It is according to the present invention to be used to prevent the blank mask 400 of electrostatic breakdown to may include in transparent substrates 102 with reference to Fig. 4
The non-electrolemma 106 that top is formed.
Preferably, non-electrolemma 106 is by that must contain aerobic (O) so that electrification is minimized and gone back in addition to metal further
It is constituted containing one of following light element or a variety of compounds: nitrogen (N), carbon (C), boron (B) and hydrogen (H).In this feelings
Under condition, it is 1 atom % to 90 atom % that non-electrolemma 106, which can have oxygen (O), nitrogen (N) is 0 atom % to 90 atom % and carbon
(C) composition for being 0 atom % to 50 atom %.
Metal film 104 and non-electrolemma 106 can have following structure in one: with uniform constituent monofilm,
Constituent or the different continuous monofilm of constituent ratio, the multilayer film with same composition object and tool there are two or be greater than two
A layer of multilayer film or continuous film with different constituents.
Depending on required film type, non-electrolemma 106 has 50 angstroms to 4,000 angstrom of thickness.For example, such as
Non- electrolemma 106 is used as the optical screen film pattern of shielding exposure light by fruit, then non-electrolemma 106 is penetrated comprising i relative to having
The optical density (OD) for exposing light and having 2.5 to 5.0 of the combined wave length of line, h ray and g ray, and have and meet this light
Learn the thickness of density.Non- electrolemma 106 has 1,000 ohm or the sheet resistance higher than 1,000 ohm.Therefore, can make by
Pattern damage caused by electricity minimizes.
In foregoing example embodiment of the invention, non-electrolemma 106 must contain aerobic (O).In this case, it wraps
Oxygen-containing (O) of metallic compound film 108 containing either one or two of metal film 104 and non-electrolemma 106 partially occupies gold
Belong to the 50% of the whole thickness of compound film 108.
Metallic compound film 108 comprising either one or two of metal film 104 and non-electrolemma 106 has and has prevented
Electricity enough resistance, for enough light shield attributes of the light source used in photoetching, to the foot of transparent substrates 102 and photoresist
Enough adhesiveness and the high chemoresistance to acid/base used in cleaning process.
In accordance with the present invention, it is possible to form blank mask by improving in the case where no additional film manufacturing process
Between metallic compound film figure of the resistance component to make photomask in metallic compound film by anti-during photoetching process
Multiple connection touching handles generated electrostatic minimum to prevent the destruction to transfer pattern, and also can avoid amendment and remanufacturing
The cost of photomask.
Although describing the present invention using most preferred embodiment, technical scope of the invention is not limited to the model of embodiment
It encloses.To those skilled in the art it is evident that the various changes and modifications to embodiment can be made.It is according to the present invention
Range will be it will also be apparent that this kind of change and modification be also contained in technical scope of the invention.
Claims (18)
1. it is a kind of there is at least one layer of metallic compound film on a transparent substrate with formed optical mask pattern for preventing electrostatic
The blank mask of destruction, the metallic compound film include:
Metal film is formed in the transparent substrates；And
Non- electrolemma, is formed on the metal film, and the non-electrolemma is prevented because of the accumulation on the surface between the pattern
Charge difference caused by destruction caused by static discharge to the pattern.
2. it is according to claim 1 for preventing the blank mask of electrostatic breakdown, it is arrived wherein the metal film has 50 angstroms
2,000 angstroms of thickness and the non-electrolemma have 500 angstroms to 3,000 angstrom of thickness.
3. it is a kind of there is at least one layer of metallic compound film on a transparent substrate with formed optical mask pattern for preventing electrostatic
The blank mask of destruction, the metallic compound film include:
Metal film is formed in the transparent substrates；And
Non- electrolemma, is formed in the top and lower section of the metal film, and the non-electrolemma is prevented because between the pattern
To the destruction of the pattern caused by static discharge caused by the difference of the charge gathered on the surface.
4. it is according to claim 3 for preventing the blank mask of electrostatic breakdown, it is arrived wherein the metal film has 50 angstroms
1,000 angstrom of thickness and the non-electrolemma have 500 angstroms to 2,500 angstroms of thickness.
5. it is a kind of there is at least one layer of metallic compound film on a transparent substrate with formed optical mask pattern for preventing electrostatic
The blank mask of destruction, the metallic compound film include the non-electrolemma formed on the transparent substrate, the non-electrification
Film prevent caused by the static discharge because of caused by the difference of the charge gathered on the surface between the pattern to the figure
The destruction of case.
6. it is according to claim 5 for preventing the blank mask of electrostatic breakdown, wherein the non-electrolemma has 50 angstroms
To 4,000 angstroms of thickness.
7. according to claim 1, for preventing the blank mask of electrostatic breakdown described in any one of 3,5, wherein described in being formed
The non-electrolemma of metallic compound film have following structure in one: with uniform constituent monofilm, constituent
Or there are two or greater than two layers for the different continuous monofilm of constituent ratio, the multilayer film with same composition object and tool
Multilayer film or continuous film with different constituents.
8. it is according to claim 1 or 3 for preventing the blank mask of electrostatic breakdown, wherein forming the metallic compound
The metal film of film have following structure in one: with uniform constituent monofilm, constituent or constituent ratio
Different continuous monofilm, the multilayer film with same composition object and tool there are two or greater than two layers multilayer film or have
The continuous film of different constituents.
9. according to claim 1, for preventing the blank mask of electrostatic breakdown described in any one of 3,5, wherein the metal
Compound film has 1,000 ohm or the sheet resistance greater than 1,000 ohm.
10. according to claim 1, for preventing the blank mask of electrostatic breakdown described in any one of 3,5, wherein the metal
Compound film is relative to the exposure light with the combined wave length for including i ray, h ray and g ray and with 2.5 to 5.0
Optical density (OD).
11. according to claim 1, for preventing the blank mask of electrostatic breakdown described in any one of 3,5, wherein the metal
Compound film by being constituted containing one of following metal or a variety of compounds, the compound include: aluminium, cobalt, tungsten, molybdenum,
Vanadium, palladium, titanium, platinum, manganese, iron, nickel, cadmium, zirconium, magnesium, lithium, selenium, copper, yttrium, sulphur, indium, tin, boron, beryllium, sodium, tantalum, hafnium and niobium, and
Further contain one of following light element or a variety of: nitrogen, oxygen, carbon, boron and hydrogen or the metallic compound film by addition to
One of described above metal or a variety of metal silicides also containing silicon in addition are constituted, or by addition to the metal silicide
The metal-silicide compound also containing light element described above is constituted in addition.
12. according to claim 1, for preventing the blank mask of electrostatic breakdown described in any one of 3,5, wherein the metal
Compound film is made of one of following chromium compound: chromium oxide, chromium nitride, chromium carbide, nitrogen oxidation chromium, oxidation of coal chromium, carbon
Chromium nitride and nitrogen oxygen chromium carbide.
13. according to claim 1, for preventing the blank mask of electrostatic breakdown described in any one of 3,5, wherein described non-
Electrolemma is containing aerobic.
14. it is according to claim 13 for preventing the blank mask of electrostatic breakdown, wherein the metallic compound film
Oxygen-containing part occupies the 50% of entire film thickness.
15. according to claim 13 for preventing the blank mask of electrostatic breakdown, wherein the non-electrolemma by addition to
It is also further constituted containing one of following light element or a variety of compounds other than metal: nitrogen, carbon, boron and hydrogen, and
With oxygen be 1 atom % to 90 atom %, nitrogen be 0 atom % to 90 atom % and carbon be group of the 0 atom % to 50 atom %
At.
16. according to claim 1 or 3 for preventing the blank mask of electrostatic breakdown, wherein the metal film by addition to
It is also further constituted containing one of following light element or a variety of compounds other than metal: nitrogen, carbon, boron and hydrogen, and
With oxygen be 0 atom % to 50 atom %, nitrogen be 0 atom % to 50 atom % and carbon be group of the 0 atom % to 50 atom %
At.
17. it is according to claim 1 or 3 for preventing the blank mask of electrostatic breakdown, wherein the metal film is at least
One tunic, including one of the following or multiple: optical screen film, anti-reflective film, phase shift film, semi-transmissive film, hard mask film and
Conductive film.
18. it is a kind of for preventing the photomask of electrostatic breakdown, including by making the use as described in any one of claim 1,3,5
Pattern is formed by preventing the blank mask of electrostatic breakdown from patterning.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2017-0128471 | 2017-10-01 | ||
| KR20170128471 | 2017-10-01 | ||
| KR10-2017-0177623 | 2017-12-22 | ||
| KR1020170177623A KR20190038981A (en) | 2017-10-01 | 2017-12-22 | Blankmask and Photomask using prevention of the electrostatic destruction |
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| CN109597276A true CN109597276A (en) | 2019-04-09 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1428652A (en) * | 2001-12-26 | 2003-07-09 | 联华电子股份有限公司 | Photomask structure and manufacturing method thereof |
| KR20120087186A (en) * | 2009-12-30 | 2012-08-06 | 인텔 코포레이션 | Phase-shift photomask and patterning method |
| CN103941540A (en) * | 2014-04-11 | 2014-07-23 | 京东方科技集团股份有限公司 | Mask plate |
| CN103955110A (en) * | 2012-10-15 | 2014-07-30 | 表面清洁技术株式会社 | Mask blank and photomask |
| CN105319835A (en) * | 2014-07-30 | 2016-02-10 | 信越化学工业株式会社 | Designing of photomask blank and photomask blank |
| CN106502043A (en) * | 2015-09-03 | 2017-03-15 | 信越化学工业株式会社 | Photo blanks |
-
2018
- 2018-09-28 CN CN201811140761.1A patent/CN109597276A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1428652A (en) * | 2001-12-26 | 2003-07-09 | 联华电子股份有限公司 | Photomask structure and manufacturing method thereof |
| KR20120087186A (en) * | 2009-12-30 | 2012-08-06 | 인텔 코포레이션 | Phase-shift photomask and patterning method |
| CN103955110A (en) * | 2012-10-15 | 2014-07-30 | 表面清洁技术株式会社 | Mask blank and photomask |
| CN103941540A (en) * | 2014-04-11 | 2014-07-23 | 京东方科技集团股份有限公司 | Mask plate |
| CN105319835A (en) * | 2014-07-30 | 2016-02-10 | 信越化学工业株式会社 | Designing of photomask blank and photomask blank |
| CN106502043A (en) * | 2015-09-03 | 2017-03-15 | 信越化学工业株式会社 | Photo blanks |
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