CN109596570A - A kind of biochemical sensitive system based on Si-based photodetectors - Google Patents
A kind of biochemical sensitive system based on Si-based photodetectors Download PDFInfo
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- 239000000700 radioactive tracer Substances 0.000 claims abstract description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 50
- 239000010703 silicon Substances 0.000 claims abstract description 50
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 31
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 31
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 31
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 31
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 31
- 230000005540 biological transmission Effects 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims description 38
- 239000002184 metal Substances 0.000 claims description 38
- 238000005247 gettering Methods 0.000 claims description 15
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 230000005693 optoelectronics Effects 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims 2
- 238000009738 saturating Methods 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000008054 signal transmission Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 31
- 238000005530 etching Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 17
- 238000001259 photo etching Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 11
- 230000008859 change Effects 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 239000010949 copper Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- -1 boron ion Chemical class 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005265 energy consumption Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000026676 system process Effects 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 208000014674 injury Diseases 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000036541 health Effects 0.000 description 1
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- 239000007769 metal material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/41—Refractivity; Phase-affecting properties, e.g. optical path length
- G01N21/45—Refractivity; Phase-affecting properties, e.g. optical path length using interferometric methods; using Schlieren methods
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Abstract
The biochemical sensitive system based on Si-based photodetectors that the present invention relates to a kind of, belongs to semiconductor light signal transmission technology field.The biochemical sensitive system based on Si-based photodetectors, the substrate of SOI wafer including light source, from bottom to up, the buried oxide layer of SOI wafer, silicon layer and SiO2Top covering, the silicon layer includes input waveguide, sensing element, transmission waveguide, tracer member, output waveguide and detector, light source output end is connected by input waveguide with sensing element input terminal, sensing element output end is connected by transmission waveguide with tracer member input terminal, tracer member output end is connected by output waveguide with detector, and input waveguide, sensing element, transmission waveguide, tracer member, output waveguide and detector outer layer are equipped with SiO2Top covering.This system passes through silicon photon biochemical system and Si-based photodetectors is arranged, and can effectively solve the problems, such as that biochemical sensitive system device complexity and spectrometer are expensive.
Description
Technical field
The biochemical sensitive system based on Si-based photodetectors that the present invention relates to a kind of, belongs to semiconductor optical signal transmission skill
Art field.
Background technique
Currently, biochemical sensitive system mainly uses optical surface Plasmon Resonance, the technology is using the side coupled
Formula realizes biochemical molecular information sensing in dielectric surface excitation plasma wave using incident light.Based on the preparation of this working principle
Sensor-based system have high sensitivity, response it is fast, without advantages such as labels, but present technological level, the instrument of this method preparation
Device constructs relative complex, higher cost, not Portable belt.Based on the optics biochemical system of optical element effective refractive index variation, to having
The high sensitivity of variations in refractive index is imitated, device size is small, and response is fast, can mutually be equal to traditional surface plasma resonance technology
Beauty, and the device is easy to carry, it is easy to operate, there is unique advantage in practical application, however, the system is also faced with key
Problem is the wavelength that optical element transmits after needing to measure effective refractive index variation, in present applications ' the tail must be taken, usually using spectrometer
The method of scanning wavelength, although this method is simple, spectrometer is sufficiently expensive, will increase the system preparation cost, serious to hinder
It is widely applied.And Si-based photodetectors are the devices based on silicon photonic waveguide, are able to reflect light wave intensity, are contained by increasing
The tracer member of tuning system, the wavelength after just can be measured variation, instead of spectrometer.In recent years, silicon photon photoelectricity integrates wave
Device sustainable development, technique and cmos device process compatible are led, can be integrated with existing integrated circuit, silicon based opto-electronics
The preparation condition of detector tends to be mature, and silicon materials have high refractive index contrast, device size on common insulating layer
Up to Nano grade, it is able to achieve the mass production of low cost.
Summary of the invention
For the above-mentioned problems of the prior art and deficiency, the present invention provides a kind of life based on Si-based photodetectors
Change sensor-based system.This system passes through silicon photon biochemical system and Si-based photodetectors is arranged, and can effectively solve biochemical sensitive
The problem of system device complexity and spectrometer valuableness, the invention is realized by the following technical scheme.
A kind of biochemical sensitive system based on Si-based photodetectors, SOI wafer including light source 100, from bottom to up
Buried oxide layer 17, silicon layer and the SiO of substrate 18, SOI wafer2Top covering 16, the silicon layer include input waveguide 101, sensing element
110, transmission waveguide 102, tracer member 120, output waveguide 103 and detector 130,100 output end of light source pass through incoming wave
It leads 101 to be connected with 110 input terminal of sensing element, 110 output end of sensing element is defeated by transmission waveguide 102 and tracer member 120
Enter end to be connected, 120 output end of tracer member is connected by output waveguide 103 with detector 130, input waveguide 101, sensing element
110, transmission waveguide 102, tracer member 120, output waveguide 103 and 130 outer layer of detector are equipped with SiO2Top covering 16.
The input waveguide 101, transmission waveguide 102 and its cross section of output waveguide 103 are bar shaped or ridge structure.
The sensing element 110 includes 2 × 2MMI coupler I 1,2 × 2MMI coupler, II 2 two 2 × 2MMI couplers
With no top covering Bragg waveguide grating I 3, without top covering Bragg waveguide grating II 4 two without top covering Bragg waveguide light
Grid, 2 × 2MMI coupler, I 1 output end upper port connect 2 × 2MMI coupler II by no top covering Bragg waveguide grating I 3
2 input terminal upper ports, 2 × 2MMI coupler, I 1 output end lower port by no top covering Bragg waveguide grating II 4 connection 2 ×
II 2 input terminal lower port of 2MMI coupler.In order to realize super low energy consumption, lower temperature limiting, the case where technical conditions allow
The bottom of waveguide optical grating can be emptied down.2 × 2MMI coupler I 1,2 × 2MMI coupler II 2 are generally using symmetrical interference mould
Formula.No top covering Bragg waveguide grating I 3 and without top covering Bragg waveguide grating II 4 imitate refractive index with top covering refractive index
Change and change, the variation of effective refractive index leads to the variation of reflection wavelength, the quilt being applied in above Bragg waveguide grating
The top covering that object is equivalent to Bragg waveguide grating is surveyed, measured object can be identified by different reflection wavelengths.Sensing element
110, for connecting sample, identify measured object, the light wave that light source 100 issues enters 2 × 2MMI coupler I by input waveguide 101
1, from the output port of the coupler enter no top covering Bragg waveguide grating I 3 later and without top covering Bragg waveguide light
Grid II 4 meet no top covering Bragg waveguide grating I 3 and the light wave without II 4 Bragg condition of top covering Bragg waveguide grating
It is reflected off go back to the multiple-mode interfence area of 2 × 2MMI coupler I 1, and is exported from the input terminal lower port of the coupler, transmission is passed through
Waveguide 102 is coupled into tracer member 120.
The tracer member 120 includes 2 × 2MMI coupler III 5,2 × 2MMI coupler, IV 6 two 2 × 2MMI couplings
Device, II 8 two Bragg waveguide grating I 7, Bragg waveguide grating Bragg waveguide gratings, and tuning system 9；2×2MMI
III 5 output end upper port of coupler by Bragg waveguide grating I 7 connect 2 × 2MMI coupler, IV 6 input terminal upper port, 2 ×
III 5 output end lower port of 2MMI coupler connects 2 × 2MMI coupler, IV 6 input terminal lower end by Bragg waveguide grating II 8
Mouthful, Bragg waveguide grating I 7, Bragg waveguide grating II 8 are equipped with the tuning system 9 of adjustable current or voltage；Tracer member
2 × 2MMI coupler III 5,2 in 2 × 2MMI coupler I 1,2 × 2MMI coupler II 2 in part 120 and sensing element 110 ×
IV 6 structure of 2MMI coupler is identical, and 2 × 2MMI coupler cross section is bar shaped or ridge, the Bradley lattice wave in tracer member 120
Without top covering Bragg waveguide grating I 3, without top covering cloth in guide grating I 7, Bragg waveguide grating II 8 and sensing element 110
Glug waveguide optical grating II 4 has top covering in addition to Bragg waveguide grating I 7, the Bragg waveguide grating II 8 in tracer member 120
Outer other structures are all the same.Back wave of the tracer member 120 for Bragg waveguide grating in conjunction measuring sensing element 110
Long, the light wave that transmission waveguide 102 inputs enters Bragg waveguide grating I 7 and Bragg waveguide by 2 × 2MMI coupler III 5
Grating II 8, the light wave for meeting its Bragg condition are reflected off go back to the multiple-mode interfence area of 2 × 2MMI coupler III 5, and from the coupling
The input terminal lower port of clutch exports, and is coupled into detector 130 by output waveguide 103.
The tuning system 9 is the heater for connecting driving voltage or electric current.
The top covering of Bragg waveguide grating I 7, Bragg waveguide grating II 8 in the tracer member 120 is SiO2On
Covering 17.
The detector 130 is Si-based photodetectors A；Si-based photodetectors A is based on silicon photon slab waveguide 19, packet
Include P++ doped region 10, P+ doped region 11, Intrinsic Gettering area 12, N++ doped region 13, metal electrode 15 and fairlead, silicon based opto-electronics
Silicon photon slab waveguide 19 in detector A is prepared by the silicon layer in SOI wafer buried oxide layer 17, and P+ doped region 11 is located at silicon
19 top center of photon slab waveguide, two sides are P++ doped region 10 and are connected, and Intrinsic Gettering area 12 is being located at P+ doped region 11 just
Top, top center are N++ doped region 13, and 15 one end of metal electrode is connected by fairlead with P++ doped region 10, separately
15 one end of outer two metal electrodes passes through fairlead respectively and is connected with N++ doped region 13, three equal positions of 15 other end of metal electrode
In fairlead upper end and penetrate SiO2Top covering 16.
The detector 130 is Si-based photodetectors B；Si-based photodetectors B is based on silicon photon slab waveguide 19, packet
Include P++ doped region 10, P+ doped region 11, Intrinsic Gettering area 12, N++ doped region 13, N+ doped region 14, metal electrode 15 and lead
Hole, the silicon photon slab waveguide 19 in photodetector are prepared by the silicon layer in SOI wafer buried oxide layer 17, Intrinsic Gettering area
12 are located at 19 top center of silicon photon slab waveguide, and two sides are connected with P+ doped region 11 and N+ doped region 14 respectively, P+ doped region
11 other sides are connected with P++ doped region 10, and 14 other side of N+ doped region is connected with N++ doped region 13, one of metal electrode
15 one end are connected by fairlead with P++ doped region 10, another 15 one end of metal electrode passes through fairlead and N++ doped region 13
It is connected, two 15 other ends of metal electrode are respectively positioned on fairlead upper end and penetrate SiO2Top covering 16.
Above-mentioned P++ doped region 10 and N++ doped region 13 are formed by the overweight doping of III group ion and V race ion respectively, described
P+ doped region 11 and N+ doped region 14 is formed by III group ion and the ion heavy doping of V race respectively.12 material of Intrinsic Gettering area is Ge
Material, different Si-based photodetectors Ge material thickness are different.15 material of metal electrode is metal, such as W, Cu, Al, fairlead
Above P++ doped region 10 and N++ doped region 13, it is used for deposited metal material, prepares electrode.
On 2 × 2MMI coupler III 5 in 2 × 2MMI coupler I 1 and tracer member 120 in the sensing element 110
Tuning system 9 equipped with thermo-optic effect.In order to which the reflection wavelength of offset can be imaged on 2 × 2MMI coupler, I 1 input terminal lower end
At mouthful, and in order to ensure the bragg wavelength after adjusting can be imaged at 2 × 2MMI coupler, III 5 input terminal lower port, 2
× 2MMI coupler I 1 and 2 × 2MMI coupler, III 5 top increase the tuning system based on thermo-optic effect or electrooptic effect, adjust
Light field output position.Increase tuning system at two at this, can farthest guarantee the feasibility of the system.
Based on the working principle of the biochemical sensitive system of Si-based photodetectors are as follows:
Before testing, 9 driving voltage of tuning system in tracer member 120 or electric current and Bragg waveguide grating back wave are established
Linked database between long variable quantity.Sensing element 110 is placed in measured object, due to its effective change in refraction, supreme packet
The wavelength X of layer Bragg waveguide grating I 3 and the reflection without top covering Bragg waveguide grating II 41With cloth in tracer member 120
The wavelength X that glug waveguide optical grating I 7 and Bragg waveguide grating II 8 reflect is no longer identical, and the photoelectric current of detector 130 becomes smaller, and adjusts
The driving voltage or electric current of tuning system 9 are saved, observes the curent change of detector 130 until the electric current is maximum, at this time supreme packet
Layer Bragg waveguide grating I 3 and without top covering Bragg waveguide grating II 4 and Bragg waveguide grating I 7 and Bragg waveguide
The reflection wavelength of grating II 8 is identical again, can obtain I 7 He of Bragg waveguide grating under the driving voltage or electric current by database
Variable quantity the △ λ, original wavelength λ of II 8 reflection wavelength of Bragg waveguide grating be it is known, by after the variation that can be calculated
Wavelength, i.e., without top covering Bragg waveguide grating I 3 and the wavelength X reflected without top covering Bragg waveguide grating II 41, the wavelength
It can reflect the refractive index of measured object, identify measured object.
The biochemical sensitive system process process flow diagram based on Si-based photodetectors is as shown in Figure 8:
Using SOI wafer, it is based on semiconductor CMOS manufacture craft, main integrated process flow is as follows.
Step 1: as shown in Fig. 8-1, device is based on SOI wafer.It is formed by photoetching, exposure and Si light engraving etching technique
The preliminary structure of Bragg waveguide grating, 2 × 2MMI coupler is prepared using secondary photoetching, exposure and Si etching technics
Complete Bragg waveguide grating, complete 2 × 2MMI coupler, as shown in Fig. 8-2.Using the above identical Twi-lithography,
Exposure and Si etching technics, also available bar shaped silicon photonic waveguide is (input silicon photonic waveguide, defeated in identical SOI wafer
Out silicon photonic waveguide, prepare the slab waveguides of Si-based photodetectors) and ridge waveguide (transmission silicon photonic waveguide).
Step 2: the step prepares the structure in Si base Ge detector in addition to metal electrode.One layer is deposited in Si waveguide
screen SiO2Protective layer, the protective layer used injury in the ion pair silicon waveguide surface for preventing injection.Subsequent progress photoetching,
Exposure forms P++ doping figure.Using III group ion implanting, the doping of P++ is completed, as shown in Fig. 8-3.P++ doping is completed
Afterwards, it removes photoresist cleaning, forms P+ doping figure followed by photoetching, exposure, it is complete using the lower III group ion implanting of concentration
Show at the doping of P+, such as Fig. 8-4.It removes photoresist cleaning, then carries out photoetching, exposure forms Ge figure, using epitaxy technology, growth one
The Ge material for determining thickness, as shown in Fig. 8-5.It removes photoresist cleaning, subsequent photoetching is exposed on Ge and forms N++ doping figure, using V
Race's ion implanting completes the doping in the area N++.As shown in Fig. 8-6
Step 3: PECVD deposition method is used, in the SiO of one thickness of silicon photonic waveguide disposed thereon (usual 1.1 microns of thickness)2
Covering passes through reversed SiO2Etching and polishing obtain smooth upper surface.
Step 4: the step prepares the metal electrode of Si base Ge detector.Pass through photoetching, exposure and SiO2Etching technics exists
Making fairlead above Si base Ge detector, etch-stop adulterates the upper surface Si in P++/N++, the deposited metal tungsten layer on chip,
As shown in Fig. 8-7.Later in SiO2The SiO of a redeposited thickness (usual 2.5 microns of thickness) above covering2Covering, by reversed
SiO2Etching and polishing obtain smooth upper surface, pass through photoetching, exposure and SiO2Etching technics makes fairlead, and etch-stop exists
On tungsten, the deposited metal copper on chip, as Fig. 8-8 shows.
Step 5: the step mainly prepares tuning system.Pass through photoetching, exposure and SiO2Etching technics is in tracer member
Tuning system figure is formed above Bragg waveguide grating, depositing TiN metal completes tuning system and prepares and deposit one layer of SiO2
Covering prepares Cu metal electrode using identical photoetching, exposure, etching and depositing operation in tuning system.As Fig. 8-9 institute
Show.
Step 6: the SiO of deposition one thickness (usual 300 nanometers of thickness)2Covering is by the method for dry etching, on metallic copper
Aluminium electrode is prepared, as seen in figs. 8-10.And carry out cleaning of removing photoresist.
Step 7: the top covering of this step removal tracer member Bragg waveguide grating.To two Bradleys of tracer member
Dry etching is carried out above lattice wave guide grating, etch-stop forms a window in the upper surface waveguide Si, carried out later with hydrofluoric acid wet
Etching, the SiO that will be deposited at waveguide optical grating etching2It removes, as illustrated in figs. 8-11.
The beneficial effects of the present invention are:
The present invention is efficiently modified to current biochemical sensitive system, based on the sensitive of Bragg waveguide grating refractive index variation
High feature is spent, is measured by Si-based photodetectors and tracer member since sensing element Bragg waveguide grating top covering is rolled over
Wavelength change caused by the variation of rate is penetrated, in the case where guaranteeing accuracy rate, the complexity of equipment is greatlied simplify, avoids making
With expensive spectrometer.All techniques are completely compatible with current CMOS technology in the present invention, can be realized the big rule of this system
Modulus produces, and has widely application prospect in fields such as medical diagnosis, health care, environmental monitorings.
Detailed description of the invention
Fig. 1 is the biochemical sensitive system connection schematic diagram the present invention is based on Si-based photodetectors；
Fig. 2 is the sensing element schematic diagram of top etch of the present invention；
Fig. 3 is the tracer member schematic diagram of top etch of the present invention；
Fig. 4 is the sensing element schematic diagram of side etching of the present invention；
Fig. 5 is the tracer member schematic diagram of side etching of the present invention；
Fig. 6 is Si-based photodetectors A schematic cross-section of the present invention；
Fig. 7 is Si-based photodetectors B-section schematic diagram of the present invention；
Fig. 8 is the biochemical sensitive system process process flow of the Si-based photodetectors of Si-based photodetectors A composition of the present invention
Figure；
Fig. 9 is the biochemical sensitive system process process flow of the Si-based photodetectors of Si-based photodetectors B composition of the present invention
Figure.
In figure: 1-2 × 2MMI coupler I, 2-2 × 2MMI coupler II, 3- is without top covering Bragg waveguide grating I, 4-
Without top covering Bragg waveguide grating II, 5-2 × 2MMI coupler III, 6-2 × 2MMI coupler IV, 7- Bragg waveguide grating
I, 8- Bragg waveguide grating II, 9- tune system, 10-P++ doped region, 11-P+ doped region, 12- Intrinsic Gettering area, 13-N++
Doped region, 14-N+ doped region, 15- metal electrode, 16-SiO2Top covering, the buried oxide layer of 17-SOI chip, 18-SOI chip
Substrate, the silicon photon slab waveguide in 19- photodetector；100- light source, 101- input waveguide, 110- sensing element, 102-
Transmission waveguide, 120- tracer member, 103- output waveguide, 130- detector.
Specific embodiment
With reference to the accompanying drawings and detailed description, the invention will be further described.
Embodiment 1
As shown in Fig. 1 to 3 and 6, should biochemical sensitive system based on Si-based photodetectors, including light source 100, from bottom to up
The substrate 18 of SOI wafer, SOI wafer buried oxide layer 17, silicon layer and SiO2Top covering 16, the silicon layer include input waveguide
101, sensing element 110, transmission waveguide 102, tracer member 120, output waveguide 103 and detector 130, light source 100 export
End is connected by input waveguide 101 with 110 input terminal of sensing element, and 110 output end of sensing element passes through transmission waveguide 102 and shows
120 input terminal of track element is connected, and 120 output end of tracer member is connected by output waveguide 103 with detector 130, input waveguide
101, sensing element 110, transmission waveguide 102, tracer member 120, output waveguide 103 and 130 outer layer of detector are equipped with SiO2
Top covering 16.
The input waveguide 101 and its cross section of output waveguide 103 are strip structure, duct height 220nm, and width is
500nm, its cross section of transmission waveguide 102 are ridge structure, width 500nm, the interior high 220nm of ridge, a height of 90nm of ectoloph.
The sensing element 110 includes 2 × 2MMI coupler I 1,2 × 2MMI coupler, II 2 two 2 × 2MMI couplers
With no top covering Bragg waveguide grating I 3, without top covering Bragg waveguide grating II 4 two without top covering Bragg waveguide light
Grid, 2 × 2MMI coupler, I 1 output end upper port connect 2 × 2MMI coupler II by no top covering Bragg waveguide grating I 3
2 input terminal upper ports, 2 × 2MMI coupler, I 1 output end lower port by no top covering Bragg waveguide grating II 4 connection 2 ×
II 2 input terminal lower port of 2MMI coupler.In order to realize super low energy consumption, lower temperature limiting, the case where technical conditions allow
The bottom of waveguide optical grating can be emptied down.2 × 2MMI coupler I 1,2 × 2MMI coupler II 2 are generally using symmetrical interference mould
Formula.No top covering Bragg waveguide grating I 3 and without top covering Bragg waveguide grating II 4 imitate refractive index with top covering refractive index
Change and change, the variation of effective refractive index leads to the variation of reflection wavelength, the quilt being applied in above Bragg waveguide grating
The top covering that object is equivalent to Bragg waveguide grating is surveyed, measured object can be identified by different reflection wavelengths.Sensing element
110, for connecting sample, identify measured object, the light wave that light source 100 issues enters 2 × 2MMI coupler I by input waveguide 101
1, from the output port of the coupler enter no top covering Bragg waveguide grating I 3 later and without top covering Bragg waveguide light
Grid II 4 meet no top covering Bragg waveguide grating I 3 and the light wave without II 4 Bragg condition of top covering Bragg waveguide grating
It is reflected off go back to the multiple-mode interfence area of 2 × 2MMI coupler I 1, and is exported from the input terminal lower port of the coupler, transmission is passed through
Waveguide 102 is coupled into tracer member 120.
The tracer member 120 includes 2 × 2MMI coupler III 5,2 × 2MMI coupler, IV 6 two 2 × 2MMI couplings
Device, II 8 two Bragg waveguide grating I 7, Bragg waveguide grating Bragg waveguide gratings, and tuning system 9；2×2MMI
III 5 output end upper port of coupler by Bragg waveguide grating I 7 connect 2 × 2MMI coupler, IV 6 input terminal upper port, 2 ×
III 5 output end lower port of 2MMI coupler connects 2 × 2MMI coupler, IV 6 input terminal lower end by Bragg waveguide grating II 8
Mouthful, Bragg waveguide grating I 7, Bragg waveguide grating II 8 are equipped with the tuning system 9 of adjustable current or voltage；Tracer member
2 × 2MMI coupler III 5,2 in 2 × 2MMI coupler I 1,2 × 2MMI coupler II 2 in part 120 and sensing element 110 ×
IV 6 structure of 2MMI coupler is identical, and 2 × 2MMI coupler cross section is strip structure, and the multiple-mode interfence head of district is 18.5 μm, and width is
4 μm, the input terminal two-port and right side output end two-port width in left side are 0.8 μm, and interval is 0.5 μm between two-port,
Under 1.55 μm of TE mould, it is able to achieve lowest loss, Bragg waveguide grating I 7, Bragg waveguide light in tracer member 120
Without top covering Bragg waveguide grating I 3, without top covering Bragg waveguide grating II 4 in addition to showing in grid II 8 and sensing element 110
Bragg waveguide grating I 7, Bragg waveguide grating II 8 in track element 120 have the outer other structures of top covering all the same, waveguide
Grating length is 200 μm, and width is 0.45 μm, and apodization model is longitudinal cosine type, and etched area is located at the top of slab waveguide.Tracer member
120 reflection wavelength for Bragg waveguide grating in conjunction measuring sensing element 110, the light wave that transmission waveguide 102 inputs are logical
It crosses 2 × 2MMI coupler III 5 and enters Bragg waveguide grating I 7 and Bragg waveguide grating II 8, meet its Bragg condition
Light wave is reflected off go back to the multiple-mode interfence area of 2 × 2MMI coupler III 5, and exports from the input terminal lower port of the coupler, leads to
It crosses output waveguide 103 and is coupled into detector 130.The tuning system 9 is the heater for connecting driving voltage.
The top covering of Bragg waveguide grating I 7, Bragg waveguide grating II 8 in the tracer member 120 is SiO2On
Covering 17.
The detector 130 is Si-based photodetectors A, and length is 25 μm；Si-based photodetectors A is based on silicon photon item
Shape waveguide 19, including P++ doped region 10, P+ doped region 11, Intrinsic Gettering area 12, N++ doped region 13, metal electrode 15 and lead
Hole, the silicon photon slab waveguide 19 in Si-based photodetectors A are prepared by the silicon layer in SOI wafer buried oxide layer 17, and P+ mixes
Miscellaneous area 11 is located at 19 top center of silicon photon slab waveguide, and two sides are P++ doped region 10 and are connected, and Intrinsic Gettering area 12 is located at
Right above P+ doped region 11, top center is N++ doped region 13, and 15 one end of metal electrode is mixed by fairlead and P++
Miscellaneous area 10 is connected, other two 15 one end of metal electrode passes through fairlead respectively and is connected with N++ doped region 13, three metal electrodes
15 other ends are respectively positioned on fairlead upper end and penetrate SiO2Top covering 16.P++ doped region 10(boron ion heavy doping, implantation concentration
For 4e15/cm2) and N++ doped region 13(injection be phosphonium ion, implantation concentration 4e15/cm2), the P+ doped region 11(boron
Ion heavy doping, implantation concentration 6e12/cm2).12 material of Intrinsic Gettering area is Ge material, and 12 width of Intrinsic Gettering area is 5 μ
M is highly 0.5 μm.15 material of metal electrode is metal, such as W, Cu, Al.
On 2 × 2MMI coupler III 5 in 2 × 2MMI coupler I 1 and tracer member 120 in the sensing element 110
Tuning system 9 equipped with thermo-optic effect or electrooptic effect.In order to which the reflection wavelength of offset can be imaged on 2 × 2MMI coupler I 1
At input terminal lower port, and in order to ensure the bragg wavelength after adjusting can be imaged under 2 × 2MMI coupler, III 5 input terminal
At port, increase above 2 × 2MMI coupler I 1 and 2 × 2MMI coupler III 5 and system is tuned based on thermo-optic effect, adjusts light
Field output position.Increase tuning system at two at this, can farthest guarantee the feasibility of the system.
Embodiment 2
As shown in Fig. 1,4,5,7, it is somebody's turn to do the biochemical sensitive system based on Si-based photodetectors, including light source 100, from bottom to up
Buried oxide layer 17, silicon layer and the SiO of the substrate 18 of SOI wafer, SOI wafer2Top covering 16, the silicon layer include input waveguide 101,
Sensing element 110, transmission waveguide 102, tracer member 120, output waveguide 103 and detector 130,100 output end of light source are logical
It crosses input waveguide 101 to be connected with 110 input terminal of sensing element, 110 output end of sensing element passes through transmission waveguide 102 and tracer member
120 input terminal of part is connected, and 120 output end of tracer member is connected by output waveguide 103 with detector 130, input waveguide 101,
Sensing element 110, transmission waveguide 102, tracer member 120, output waveguide 103 and 130 outer layer of detector are equipped with SiO2Upper packet
Layer 16.
The input waveguide 101 and its cross section of output waveguide 103 are strip structure, duct height 220nm, and width is
500nm, its cross section of transmission waveguide 102 are ridge structure, width 500nm, the interior high 220nm of ridge, a height of 90nm of ectoloph.
The sensing element 110 includes 2 × 2MMI coupler I 1,2 × 2MMI coupler, II 2 two 2 × 2MMI couplers
With no top covering Bragg waveguide grating I 3, without top covering Bragg waveguide grating II 4 two without top covering Bragg waveguide light
Grid, 2 × 2MMI coupler, I 1 output end upper port connect 2 × 2MMI coupler II by no top covering Bragg waveguide grating I 3
2 input terminal upper ports, 2 × 2MMI coupler, I 1 output end lower port by no top covering Bragg waveguide grating II 4 connection 2 ×
II 2 input terminal lower port of 2MMI coupler.In order to realize super low energy consumption, lower temperature limiting, the case where technical conditions allow
The bottom of waveguide optical grating can be emptied down.2 × 2MMI coupler I 1,2 × 2MMI coupler II 2 are generally using symmetrical interference mould
Formula.No top covering Bragg waveguide grating I 3 and without top covering Bragg waveguide grating II 4 imitate refractive index with top covering refractive index
Change and change, the variation of effective refractive index leads to the variation of reflection wavelength, the quilt being applied in above Bragg waveguide grating
The top covering that object is equivalent to Bragg waveguide grating is surveyed, measured object can be identified by different reflection wavelengths.Sensing element
110, for connecting sample, identify measured object, the light wave that light source 100 issues enters 2 × 2MMI coupler I by input waveguide 101
1, from the output port of the coupler enter no top covering Bragg waveguide grating I 3 later and without top covering Bragg waveguide light
Grid II 4 meet no top covering Bragg waveguide grating I 3 and the light wave without II 4 Bragg condition of top covering Bragg waveguide grating
It is reflected off go back to the multiple-mode interfence area of 2 × 2MMI coupler I 1, and is exported from the input terminal lower port of the coupler, transmission is passed through
Waveguide 102 is coupled into tracer member 120.
The tracer member 120 includes 2 × 2MMI coupler III 5,2 × 2MMI coupler, IV 6 two 2 × 2MMI couplings
Device, II 8 two Bragg waveguide grating I 7, Bragg waveguide grating Bragg waveguide gratings, and tuning system 9；2×2MMI
III 5 output end upper port of coupler by Bragg waveguide grating I 7 connect 2 × 2MMI coupler, IV 6 input terminal upper port, 2 ×
III 5 output end lower port of 2MMI coupler connects 2 × 2MMI coupler, IV 6 input terminal lower end by Bragg waveguide grating II 8
Mouthful, Bragg waveguide grating I 7, Bragg waveguide grating II 8, which are equipped with, adjusts current or voltage tuning system 9；Tracer member
2 × 2MMI coupler III 5,2 in 2 × 2MMI coupler I 1,2 × 2MMI coupler II 2 in 120 and sensing element 110 ×
IV 6 structure of 2MMI coupler is identical, and 2 × 2MMI coupler cross section is strip structure, and the multiple-mode interfence head of district is 18.5 μm, and width is
4 μm, the input terminal two-port and right side output end two-port width in left side are 0.8 μm, and interval is 0.5 μm between two-port,
Under 1.55 μm of TE mould, it is able to achieve lowest loss, Bragg waveguide grating I 7, Bragg waveguide light in tracer member 120
Without top covering Bragg waveguide grating I 3, without top covering Bragg waveguide grating II 4 in addition to showing in grid II 8 and sensing element 110
Bragg waveguide grating I 7, Bragg waveguide grating II 8 in track element 120 have the outer other structures of top covering all the same, waveguide
Grating length is 200 μm, and width is 0.45 μm, and apodization model is longitudinal cosine type, and etched area is located at the top of slab waveguide.Tracer member
120 reflection wavelength for Bragg waveguide grating in conjunction measuring sensing element 110, the light wave that transmission waveguide 102 inputs are logical
It crosses 2 × 2MMI coupler III 5 and enters Bragg waveguide grating I 7 and Bragg waveguide grating II 8, meet its Bragg condition
Light wave is reflected off go back to the multiple-mode interfence area of 2 × 2MMI coupler III 5, and exports from the input terminal lower port of the coupler, leads to
It crosses output waveguide 103 and is coupled into detector 130.The tuning system 9 is the heater for connecting driving current.
The top covering of Bragg waveguide grating I 7, Bragg waveguide grating II 8 in the tracer member 120 is SiO2On
Covering 17.
The detector 130 is Si-based photodetectors B, and length is 5 μm；Si-based photodetectors B is based on silicon photon item
Shape waveguide 19, including P++ doped region 10, P+ doped region 11, Intrinsic Gettering area 12, N++ doped region 13, N+ doped region 14, metal
Electrode 15 and fairlead, silicon photon slab waveguide 19 in photodetector by the silicon layer preparation in SOI wafer buried oxide layer 17 and
Be located at 19 top center of silicon photon slab waveguide at, Intrinsic Gettering area 12, two sides respectively with P+ doped region 11 and N+ doped region 14
It is connected, 11 other side of P+ doped region is connected with P++ doped region 10, and 14 other side of N+ doped region is connected with N++ doped region 13, wherein
One 15 one end of metal electrode is connected by fairlead with P++ doped region 10, another 15 one end of metal electrode passes through fairlead
It is connected with N++ doped region 13, two 15 other ends of metal electrode are respectively positioned on fairlead upper end and penetrate SiO2Top covering 16.
On 2 × 2MMI coupler III 5 in 2 × 2MMI coupler I 1 and tracer member 120 in the sensing element 110
Tuning system 9 equipped with thermo-optic effect or electrooptic effect.In order to enable the reflection wavelength of offset to be imaged on 2 × 2MMI coupler I 1
At input terminal lower port, and in order to ensure the bragg wavelength after adjusting can be imaged under 2 × 2MMI coupler, III 5 input terminal
At port, increase the tuning system based on thermo-optic effect above 2 × 2MMI coupler I 1 and 2 × 2MMI coupler III 5, adjusts
Light field output position.Increase tuning system at two at this, can farthest guarantee the feasibility of the system.
Process flow chart based on the biochemical sensitive system of Si-based photodetectors is as shown in Figure 9:
Using SOI wafer, as shown in fig. 9-1；Pass through double exposure, photoetching and the available complete ridge waveguide knot of silicon etching
Structure, slab waveguide and Bragg waveguide grating, as shown in Fig. 9-2；It is prepared by the method combined using dry etching with wet etching
It is 0.5 μm, 5 μm a length of, a height of 200nm slot that width is etched in the Si waveguide of Si-based photodetectors, for growing Ge material
As shown in Fig. 9-3；Deposit one layer of screen SiO2Protective layer, this is protective layer used in the ion pair silicon waveguide surface for preventing injection
Injury, pass through four exposures, photoetching, doping and cleaning process complete P+/N+/P++/N++ doped region ion injection, such as scheme
Shown in 9-4 to Fig. 9-7；It carries out making annealing treatment for 5 minutes at 1100 DEG C later.After doping, annealing, epitaxial growth skill is utilized
Art, growth is slightly above the Ge material of slot in the slot held successfully, as shown in Fig. 9-8；It, will be high since the Ge material of growth is not rectangle
It is removed in the part of slab waveguide, as shown in Fig. 9-9；1.1 μm of SiO are generated in waveguide2Top covering passes through double exposure, light
Quarter and SiO2Etching technics forms two connected Via, deposition respective thickness W and Cu metal layer, as shown in Fig. 9-10 and Fig. 9-11；
Pass through exposure, photoetching, SiO2After etching technics prepares tuning system, then with Process Production SiO as above2Covering is simultaneously deposited by Via
Cu metal layer, as shown in figs9-12；Again by exposure, photoetching and SiO2Etching technics forms Via, deposition gold in Ni metal layer
Belong to Al, as described and depicted in figs. 9-13；Dry etching is carried out above two Bragg waveguide gratings of tracer member, etch-stop is in waveguide
Surface forms a window, carries out wet etching with hydrofluoric acid later, the SiO that will be deposited at waveguide optical grating etching2It removes, such as schemes
Shown in 9-14.
In conjunction with attached drawing, the embodiment of the present invention is explained in detail above, but the present invention is not limited to above-mentioned
Embodiment within the knowledge of a person skilled in the art can also be before not departing from present inventive concept
Put that various changes can be made.
Claims (9)
1. a kind of biochemical sensitive system based on Si-based photodetectors, it is characterised in that: including light source (100), from bottom to up
The substrate (18) of SOI wafer, SOI wafer buried oxide layer (17), silicon layer and SiO2Top covering (16), the silicon layer include input
Waveguide (101), sensing element (110), transmission waveguide (102), tracer member (120), output waveguide (103) and detector
(130), light source (100) output end is connected by input waveguide (101) with sensing element (110) input terminal, sensing element (110)
Output end is connected by transmission waveguide (102) with tracer member (120) input terminal, and tracer member (120) output end passes through output
Waveguide (103) is connected with detector (130), input waveguide (101), sensing element (110), transmission waveguide (102), tracer member
(120), output waveguide (103) and detector (130) outer layer are equipped with SiO2Top covering (16).
2. the biochemical sensitive system according to claim 1 based on Si-based photodetectors, it is characterised in that: the input
Waveguide (101), transmission waveguide (102) and output waveguide (103) its cross section are bar shaped or ridge structure.
3. the biochemical sensitive system according to claim 1 based on Si-based photodetectors, it is characterised in that: the sensing
Element (110) is including 2 × 2MMI coupler I (1), 2 × 2MMI coupler II (2), two 2 × 2MMI couplers and without top covering
Bragg waveguide grating I (3), without top covering Bragg waveguide grating II (4) two without top covering Bragg waveguide grating, 2 ×
2MMI coupler I (1) output end upper port connects 2 × 2MMI coupler II by no top covering Bragg waveguide grating I (3)
(2) input terminal upper port, 2 × 2MMI coupler I (1) output end lower port pass through no top covering Bragg waveguide grating II (4)
Connect 2 × 2MMI coupler II (2) input terminal lower port.
4. the biochemical sensitive system according to claim 3 based on Si-based photodetectors, it is characterised in that: the tracer
Element (120) includes 2 × 2MMI coupler III (5), 2 × 2MMI coupler IV (6), two 2 × 2MMI couplers, Bradley lattice wave
Two guide grating I (7), Bragg waveguide grating II (8) Bragg waveguide gratings, and tuning system (9)；2 × 2MMI coupling
Device III (5) output end upper port by Bragg waveguide grating I (7) connect 2 × 2MMI coupler IV (6) output end upper port, 2
III (5) output end lower port of × 2MMI coupler is defeated by Bragg waveguide grating II (8) connection 2 × 2MMI coupler IV (6)
Outlet lower port, Bragg waveguide grating I (7), Bragg waveguide grating II (8) are equipped with the tuning of adjustable current or voltage
System (9)；2 × 2MMI coupler I (1), 2 × 2MMI coupler II (2) and sensing element (110) in tracer member (120)
In 2 × 2MMI coupler III (5), 2 × 2MMI coupler IV (6) structure it is identical, 2 × 2MMI coupler cross section is bar shaped or ridge
Type, nothing in the Bragg waveguide grating I (7), Bragg waveguide grating II (8) and sensing element (110) in tracer member (120)
Top covering Bragg waveguide grating I (3), without top covering Bragg waveguide grating II (4) in addition to the Bradley in tracer member (120)
Lattice wave guide grating I (7), Bragg waveguide grating II (8) have the outer other structures of top covering all the same.
5. the biochemical sensitive system according to claim 4 based on Si-based photodetectors, it is characterised in that: the tuning
System (9) is the heater for connecting driving voltage or electric current.
6. the biochemical sensitive system according to claim 4 based on Si-based photodetectors, it is characterised in that: the tracer
The top covering of Bragg waveguide grating I (7), Bragg waveguide grating II (8) in element (120) is SiO2Top covering (17).
7. the biochemical sensitive system according to claim 1 based on Si-based photodetectors, it is characterised in that: the detection
Device (130) is Si-based photodetectors A；Si-based photodetectors A is based on silicon photon slab waveguide (19), including P++ doped region
(10), P+ doped region (11), Intrinsic Gettering area (12), N++ doped region (13), metal electrode (15) and fairlead, silicon based opto-electronics
Silicon photon slab waveguide (19) in detector A is prepared by the silicon layer on SOI wafer buried oxide layer (17), P+ doped region (11)
Positioned at silicon photon slab waveguide (19) top center, two sides are P++ doped region (10) and are connected, and Intrinsic Gettering area (12) are located at
Right above P+ doped region (11), top center is N++ doped region (13), metal electrode (15) one end by fairlead with
P++ doped region (10) is connected, other two metal electrode (15) one end passes through fairlead respectively and is connected with N++ doped region (13),
Three metal electrode (15) other ends are respectively positioned on fairlead upper end and penetrate SiO2Top covering (16).
8. the biochemical sensitive system according to claim 1 based on Si-based photodetectors, it is characterised in that: the detection
Device (130) is Si-based photodetectors B；Si-based photodetectors B is based on silicon photon slab waveguide (19), including P++ doped region
(10), P+ doped region (11), Intrinsic Gettering area (12), N++ doped region (13), N+ doped region (14), metal electrode (15) and draw
String holes, the silicon photon slab waveguide (19) in photodetector is prepared by the silicon layer on SOI wafer buried oxide layer (17), intrinsic
Uptake zone (12) is located at silicon photon slab waveguide (19) top center, two sides respectively with P+ doped region (11) and N+ doped region (14)
It is connected, P+ doped region (11) other side is connected with P++ doped region (10), N+ doped region (14) other side and N++ doped region (13)
It is connected, one of metal electrode (15) one end is connected by fairlead with P++ doped region (10), another metal electrode (15)
One end is connected by fairlead with N++ doped region (13), and two metal electrode (15) other ends are respectively positioned on fairlead upper end and wear
Saturating SiO2Top covering (16).
9. according to claim 1 to the biochemical sensitive system described in 8 any one based on Si-based photodetectors, feature exists
In: 2 × 2MMI coupler III in 2 × 2MMI coupler I (1) and tracer member (120) in the sensing element (110)
(5) tuning system (9) are equipped with.
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