CN109587918A - The control method of extreme ultraviolet radiation source - Google Patents
The control method of extreme ultraviolet radiation source Download PDFInfo
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- CN109587918A CN109587918A CN201811094243.0A CN201811094243A CN109587918A CN 109587918 A CN109587918 A CN 109587918A CN 201811094243 A CN201811094243 A CN 201811094243A CN 109587918 A CN109587918 A CN 109587918A
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
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- 229910001128 Sn alloy Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- X-Ray Techniques (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
A kind of control method of extreme ultraviolet (EUV) radiation source, comprising: to irradiate target drop from the light of drop irradiation module, detect the light for being reflected and/or being scattered by target drop.Whether the method includes determining whether luminous intensity detected in tolerance interval.Judgement in response to luminous intensity detected not in tolerance interval automatically adjusts the parameter of drop irradiation module, so that luminous intensity detected is fallen into tolerance interval.
Description
Technical field
This disclosure relates to which a kind of extreme ultraviolet (EUV) light-source system, in particular to a kind of to be based on laser excitation to control
The system of the time of laser beam in the EUV light source of plasma.
Background technique
Radiation wavelength for photoetching in semiconductor manufacture is down to deep ultraviolet light (deep from ultraviolet light
ultraviolet；DUV), it is more down to extreme ultraviolet (extreme ultraviolet recently；EUV).In addition, reducing element
Size needs further to improve the resolution ratio of photoetching, using extreme ultraviolet photolithographic (extreme ultraviolet
lithography；EUVL) Lai Shixian.Extreme ultraviolet photolithographic is the radiation of about 1nm to about 100nm using wavelength.
It is a kind of generate extreme ultraviolet radiation method be Laser induced plasma (laser-produced plasma；
LPP).In EUV light source based on by Laser induced plasma, high-power laser beam is to focus on metal mark
On the droplet of target (such as tin), with the plasma of formation height ionization, radiating, there is maximum, which to radiate wave crest, is
The extreme ultraviolet of 13.5nm radiates.Gao Gong is depended on by the extreme ultraviolet radiation intensity that Laser induced plasma (LPP) is generated
Rate laser can generate the effect of plasma from target drop.Make the generation of high-power laser pulse and the movement of drop target
It accurately synchronizes, the efficiency of extreme ultraviolet radiation source of the Lai Gaishan based on Laser induced plasma.
Summary of the invention
The embodiment of the present disclosure provides a kind of control method of extreme ultraviolet radiation source, comprising: to come from drop irradiation module
Light irradiate target drop, detect the light that is reflected and/or scattered by target drop, determine luminous intensity detected whether between can
Receive in range, if it is determined that and luminous intensity detected not in tolerance interval, automatically adjust drop irradiate mould
The parameter of block, so that luminous intensity detected is fallen into tolerance interval.
The embodiment of the present disclosure provides a kind of device for measuring target liquid drop speed in EUV light source, comprising: drop irradiation
Module, drop detection module, controller and processor.Drop irradiation module includes radiation source, and radiation source is to predetermined
Target drop is irradiated in position.Drop detection module is to detect the radiation reflected and/or scattered by target drop.Controller
Be coupled to drop irradiation module, and design with determine drop detection module radiation intensity detected whether between intensity can
Receive in range, and the judgement in response to intensity detected not in tolerance interval, automatically adjusts drop irradiation module
Parameter.Processor is the speed to determine target drop based on the time of the detected radiation of drop detection module.
The embodiment of the present disclosure provides a kind of device of generation extreme ultraviolet radiation, comprising: droplet generator, drop irradiate mould
Block, drop detection module and controller, wherein droplet generator is to generate target drop.Drop irradiation module includes spoke
Source, adjustable iris aperture and wing drop mechanism are penetrated, radiation source is to irradiate target drop in predetermined position.From radiation
The radiation in source is by adjustable iris aperture, and wing drop mechanism is coupled to radiation source.Drop detection module be to detect by
The radiation of the reflection of target drop and/or scattering.Controller is design to determine that drop detection module radiation intensity detected is
In the no tolerance interval between intensity, and the judgement in response to intensity detected not in tolerance interval, automatically adjust
The parameter of whole drop irradiation module.
Detailed description of the invention
According to detailed description below and cooperate Figure of description to become more apparent upon the concept of the embodiment of the present disclosure.It should be noted that
, according to the standard convention of this industry, the various parts in attached drawing are not necessarily drawn to scale.In fact, may be arbitrarily
The size of various parts is zoomed in or out, to do clear explanation.
Fig. 1 is that have Laser induced plasma (LPP) extreme ultraviolet radiation source according to some embodiments of the disclosure
The schematic diagram of extreme ultraviolet lithography system.
Fig. 2A schematically shows the device according to the embodiment of the present disclosure, arrives will generate excitation pulse with target drop
It is synchronous up to lasing region.
Fig. 2 B shows the simulation of drop detection module drop signal detected and the signal from plasma spark.
Fig. 3 is shown according to the drop irradiation module of the EUV light source of the embodiment of the present disclosure and/or drop detection module
The flow chart of control method.
Fig. 4 A schematically shows the target drop speed being used to measure in EUV light source according to the embodiment of the present disclosure
The device of degree.
Fig. 4 B is the drawings in detail of the slit control mechanism according to used in the device in Fig. 4 A of the embodiment of the present disclosure.
Fig. 4 C is the detailed of another slit control mechanism used in the device of Fig. 4 A according to the embodiment of the present disclosure
Attached drawing.
Description of symbols:
100~extreme ultraviolet radiation source；
105~chamber；
110~collector；
115~target droplet generator；
117~nozzle；
200~exposure tool；
300~excitation laser source (laser source)；
310~laser generator；
320~laser aiming optical element；
330~focusing device；
410~drop irradiation module；
413~tilt control mechanism (wing drop)；
414~aperture (barrier)；
414 '~iris-type diaphragm；
414a, 414b, 414c~slit；
414a '~mono- slit；
415~radiation source；
417~slit control mechanism (automatic slit)；
420~drop detection module；
430~timing and energy measurement module (processor)；
450~controller；
BF~bottom；
DP~target drop；
DP1, DP2~damper；
EUV~extreme ultraviolet；
L, R~light；
LR1~laser；
LR2~excitation laser；
P~position；
PP1, PP2~base plate；
MF~major floors；
S300~method；
S310, S320, S330, S340~operation；
ZE~lasing region.
Specific embodiment
Disclosure below provides many different embodiments or example to implement the different components of the embodiment of the present disclosure.
Component described below and the particular example of configuration, to simplify the explanation of the embodiment of the present disclosure.Certainly, these specific examples are only
Demonstration is not limited to the embodiment of the present disclosure.For example, referring to that the first component is formed on second component in the following description
Or top, that is, it indicates that it may include the first component with second component is the embodiment directly contacted, also may include having additional component
The embodiment for being formed between the first component and second component, and contacting the first component may directly with second component.Separately
Outside, identical reference symbol and/or label may be reused in the different examples of disclosure below.These are repeated
For simplification and clearly purpose, not to the relationship between the specified different embodiments and/or structure discussed.
In addition, can be used and space correlation word herein.Such as " beneath ", " lower section ", " lower ", " top ", " higher
" and similar word, in order to describe an element or component shown in the accompanying drawings and another (a little) element or component it
Between relationship.Other than the orientation being shown in the accompanying drawings, these space correlation words are intended to comprising the dress in use or in operation
The different direction set.Device may be diverted different direction (be rotated by 90 ° or other orientation), and space correlation as used herein
Word can also do same explanation according to this.In addition, term " by ... it is made " it can refer to " comprising " or " Consists of ".In the disclosure
In, unless otherwise indicated, phrase " one of A, B and C " mean " A, B and/or C " (A, B, C, A and B, A and C, B and C or
Person is A, B and C), and it is not meant as the element from A, the element from B and the element from C.
In general, this disclosure relates to extreme ultraviolet (EUV) lithography system and method, in particular to control swash with laser
The device and method of excitation laser used in extreme ultraviolet radiation source based on hair plasma (LPP).Excitation laser adds
Metal (such as tin) the target drop of thermal potential in Laser induced plasma chamber, drop is ionized into as plasma
Body, and plasma radiates extreme ultraviolet radiation.In order to most preferably heat target drop, target drop must with carry out self-excitation
The excitation pulse of laser reaches the focus of excitation laser simultaneously.Therefore, in order to from excitation layer trigger an excitation pulse, target drop
Between the triggered time synchronize facilitate Laser induced plasma extreme ultraviolet radiation source efficiency and stability.
Drop irradiation module and drop detection module are the speed to measure target drop.Drop irradiation module
(droplet illumination module；DIM) light is directed to target drops, and by drop detection module (droplet
detection module；DDM) the light of detection reflection and/or scattering.Then, signal is transferred to timing and energy measurement module
(timing energy measurement module；TEM2) to determine launch time of prepulsing (Tfire).The disclosure is real
Applying example is to be directed to irradiation and the detection of control drop, to accurately measure the speed of drop.
Fig. 1 is the extreme ultraviolet radiation having based on Laser induced plasma according to some embodiments of the disclosure
The schematic diagram of the extreme ultraviolet lithography system in source.Extreme ultraviolet lithography system includes extreme ultraviolet radiation source 100,200 (example of exposure tool
Such as scanner (scanner)) and excitation laser source 300, wherein extreme ultraviolet radiation source 100 generates extreme ultraviolet radiation.Such as
Shown in Fig. 1, in some embodiments, extreme ultraviolet radiation source 100 is mounted to the major floors of clean room with exposure tool 200
On MF, and excitation laser source 300 is then mounted in the bottom BF below major floors.Extreme ultraviolet radiation source 100 and
Exposure tool 200 is all placed in above base plate PP1, PP2 by damper DP1, DP2 respectively.Extreme ultraviolet radiation source 100 and
Exposure tool 200 is coupled against each other by coupled connection mechanism, and wherein coupled connection mechanism may include focusing unit.
Lithography system is to design by extreme ultraviolet (also radiating in the disclosure interchangeably referenced as extreme ultraviolet) come to light
Extreme ultraviolet (EUV) lithography system that photoresist layer is exposed.Photoresist layer is the material sensitive to extreme ultraviolet.Extreme ultraviolet
Etching system is using extreme ultraviolet radiation source 100 to generate extreme ultraviolet, such as wavelength between about 1nm to the pole between about 100nm
Ultraviolet light.In a particular example, extreme ultraviolet of 100 generation wavelength of extreme ultraviolet radiation source centered on about 13.5nm.?
In the present embodiment, extreme ultraviolet radiation source 100 is using the mechanism of Laser induced plasma (LPP) to generate extreme ultraviolet spoke
It penetrates.
Exposure tool 200 includes various reflection optical components (such as: convex surface, concave surface and/or plane mirror), mask fixing machine
Structure and wafer fixing structure, wherein aforementioned mask fixing structure includes mask platform.The pole generated by extreme ultraviolet radiation source 100
Ultraviolet radiation is to be guided by reflecting optical component to the mask being fixed on mask platform.In some embodiments, mask platform
Including electrostatic chuck (e-chuck), with stationary shroud.Because gas molecule can absorb extreme ultraviolet, it to be used for extreme ultraviolet needle drawing
The lithography system of case is safeguarded in the environment of vacuum or low pressure, to avoid the remitted its fury of extreme ultraviolet.
In the disclosure, term " mask ", " mask (photomask) " and " times contracting mask (reticle) " it is interchangeable
Ground uses.In the present embodiment, mask is reflective mask.In embodiment, mask includes the substrate with suitable material,
Such as: the material or vitreous silica of low thermal coefficient of expansion.In various examples, previous materials include doped silicon oxide (SiO2)
Titanium oxide (TiO2) or other suitable materials with low thermal coefficient of expansion.Mask includes multiple reflecting layer (ML), is deposited on
On substrate.Reflecting layer includes multiple films pair, such as molybdenum-silicon (Mo/Si) film is to (such as the molybdenum layer position in each film pair
Above or below silicon layer).On the other hand, reflecting layer may include molybdenum-beryllium (Mo/Be) film to or to be configurable to height anti-
Other suitable materials of emitter-base bandgap grading ultraviolet light.Mask can further include coating (such as ruthenium (Ru)), be set on reflecting layer to protect
Protect reflecting layer.Mask further includes absorbed layer (such as tantalum boron nitride (TaBN) layer), is deposited on above reflecting layer.Pattern above-mentioned suction
Layer is received to define one layer of integrated circuit (IC).On the other hand, can be in another layer of reflecting layer of reflecting layer disposed thereon, and carry out figure
Case forms extreme ultraviolet phase offset mask to define one layer of integrated circuit (IC) whereby.
Exposure tool 200 includes projection optical module, mask pattern to be imaged in the semiconductor for being coated with photoresist
On substrate.Semiconductor substrate is fixed on the Substrate table of exposure tool 200.In general, projection optical module includes reflected light
Learn element.Projection optical module collects the extreme ultraviolet radiation (extreme ultraviolet) directly from mask, has and is defined in mask
On pattern image (image), form image on a photoresist whereby.
In the various embodiments of the disclosure, semiconductor substrate is semiconductor crystal wafer, such as: Silicon Wafer or other types wait for
Patterned wafer.In the embodiments of the present disclosure, semiconductor substrate is coated with the photoresist layer sensitive to extreme ultraviolet.Including upper
The various components for stating component are that co-integration is integrated, and can be operated to execute photolithographic exposure technique.
Lithography system can further include other modules, or module integrated be integrated (or coupling) with other.
As shown in Figure 1, extreme ultraviolet radiation source 100 includes target droplet generator 115 and is swashed by what chamber 105 was coated
Light excites plasma collector 110.Target droplet generator 115 generates multiple target drop DP, is supplied to by nozzle 117
Chamber 105.In some embodiments, target drop DP is the alloy of tin (Sn), lithium (Li) or tin and lithium.In some embodiments
In, each target drop DP all has the diameter in the range of about 10 microns (μm) to about 100 microns.For example, exist
In embodiment, target drop DP is borne tin droplets, all has about 10 μm, about 25 μm, about 50 μm or any between these values
Diameter.In some embodiments, between about 50 drops (i.e. the ejection frequency of about 50Hz) per second to about 50000 liquid per second
Rate in the range of drop (i.e. the ejection frequency of about 50kHz) supplies target drop DP by nozzle 117.For example, in reality
It applies in example, with about 50Hz, about 100Hz, about 500Hz, about 1kHz, about 10kHz, about 25kHz, about 50kHz or any between these
Ejection frequency between frequency supplies target drop DP.In various embodiments, with about 10 meters per second to per second between about 100 meters
Speed by nozzle 117 spray target drop DP to lasing region ZE.For example, in embodiment, target drop DP has
Any speed of about 10m/s, about 25m/s, about 50m/s, about 75m/s, about 100m/s or any between these speed.
The excitation laser LR2 as caused by excitation laser source 300 is pulse laser.Excitation laser LR2 is by excitation laser
Produced by source 300.Excitation laser source 300 may include laser generator 310, laser aiming optical element 320 and focusing device
330.In some embodiments, laser source 300 includes carbon dioxide (CO2) or neodymium-doped (neodymium) yttrium-aluminium-garnet
(yttrium aluminum garnet) (Nd:YAG) laser source, wavelength is in the infrared spectral range of electromagnetic spectrum.Citing
For, in embodiment, the wavelength of laser source 300 is 9.4 μm or 10.6 μm.The laser LR1 as caused by laser generator 310
It is to be guided by laser aiming optical element 320, and excitation laser LR2 is collected as by focusing device 330, is subsequently introduced extreme ultraviolet
Optical emitter 100.
In some embodiments, excitation laser LR2 includes pre- thermal laser and main laser.In this embodiment, pre- heat shock
Light pulse (in the disclosure interchangeably referenced as " prepulsing ") has for heating (or preheating) specific target drop to generate
The target plume (plume) of the low-density of multiple smaller droplets, the subsequent PULSE HEATING (or reheating) by from main laser,
To increase the exit dose of extreme ultraviolet.
In various embodiments, preheating laser pulse has about 100 μm or spot size below, and main laser pulse
With the spot size in the range of about 150 μm to about 300 μm.In some embodiments, preheating laser pulse and main
Laser pulse has the pulse duration in the range of about 10ns to about 50ns, and between about 1kHz to about 100kHz
In the range of pulse frequency.In various embodiments, pre- thermal laser and main laser have between about 1 kilowatt (kW) to about
Mean power in the range of 50kW.In embodiment, the ejection frequency of the pulse frequency of excitation laser LR2 and target drop DP
It is consistent.
Excitation laser LR2 is directly through window (or lens) to lasing region ZE.Aforementioned window can be substantially using laser beam
The suitable material penetrated.The generation of laser pulse is synchronous via the ejection of nozzle 117 with target drop DP.In target drop
In the case where lasing region, prepulsing can heat target drop, and be converted into the target plume of low-density.Control pre- arteries and veins
Delay between punching and major pulses, to allow target plume to be formed and be extended to optimal size and geometry.Various
In embodiment, prepulsing and major pulses pulse duration having the same and peak power.When major pulses heat target
When plume, high-temperature plasma can be generated.Aforementioned plasma radiates extreme ultraviolet radiation, as collected by collector 110.
Collector 110 further reflection and focusing electrode ultraviolet radiation, to execute photolithographic exposure technique by exposure tool 200.
It is a kind of that pulse (one of prepulsing or major pulses or aforementioned the two) and mark will be generated from excitation laser
It is detection target drop by specific position that target drop, which reaches the synchronized method of lasing region, and using it as triggering excitation pulse
The signal of (or prepulsing).In this method, for example, if the time that target drop passes through is expressed as t0, generate (and inspection
Survey) extreme ultraviolet radiation time be expressed as trad, and detect between the target drop position passed through and the center of lasing region away from
From d is expressed as, then the speed v of target dropdpIt calculates as follows:
vdp=d/ (trad-to)-equation (1)
Because it is expected that droplet generator can repeatably supply drop with fixed speed, once calculate the speed of target drop
Spend vdp, after detection target drop has passed through specific position, with d/vdpTime delay trigger excitation pulse, to ensure to swash
Hair pulse and target drop reach the center of lasing region simultaneously.Pass through using target drop come the embodiment that triggers prepulsing
In, major pulses are triggered with fixed delay after prepulsing.In some embodiments, by periodically measuring generation
The time t of (and detection) extreme ultraviolet radiationrad, target liquid drop speed v is calculated to be repeated periodicallydpValue.If it is desired,
Then by the arrival of the generation of pulse and target drop secondary synchronization again.
Fig. 2A schematically shows the device according to the embodiment in lithography system shown in FIG. 1, and aforementioned device is
It is synchronous with excitation pulse is generated target drop is reached lasing region.In embodiment, drop irradiation module 410 is to incite somebody to action
The target drop DP irradiation sprayed from nozzle 117.Drop irradiation module 410 is along target drop DP from nozzle 117 to lasing region
The path of ZE focuses on fixed position P.Technical staff will be understood that in technical field described in the disclosure, once excitation laser
In hitting target drop DP in lasing region ZE, the plasma formed by the ionization of target drop DP understands Rapid Expansion to one
Volume, this volume depend on target drop size and excitation laser provided by energy.In various embodiments, plasma
Know from experience from lasing region ZE and expands hundreds of microns.Used term " bulked volume " means to add with excitation laser in the disclosure
The volume of plasma expansion after hot target drop.Therefore position P is affixed to other than bulked volume, to avoid by plasma
Soma is disturbed.In embodiment, position P is fixed on other than lasing region ZE with several millimeters of known distance d.
In embodiment, drop irradiation module 410 is continuous wave laser.In other embodiments, drop irradiation module 410
For pulse laser.The wavelength of drop irradiation module 410 is not particularly limited.In embodiment, drop irradiation module 410
Wavelength is in the visible light region of electromagnetic spectrum.In some embodiments, the wavelength of drop irradiation module 410 is about
1070nm.In various embodiments, drop irradiation module 410 has the mean power in the range of about 1W to about 50W.It lifts
For example, in embodiment, drop irradiation module 410 has about 1W, about 5W, about 10W, about 25W, about 40W, about 50W or any
Mean power between above-mentioned numerical value.In some embodiments, drop irradiation module 410, which generates, has uniform irradiation wheel
Wide light beam.For example, in embodiment, drop irradiation module 410 generates sector optical curtain, has substantially phase in entire profile
Same intensity.In various embodiments, the width of light beam as caused by drop irradiation module 410 is between about 10 μm to about 300 μm
In the range of.
In the case where target drop DP is by light beam caused by drop irradiation module 410, target drop DP can reflect
And/or the photon in scattered beam.In embodiment, target drop DP can make scattered photon generally be in Gaussian intensity profile.
Drop detection module 420 (in the disclosure interchangeably referenced as " drop detector 420 ") detection is scattered by target drop DP
Photon.The center of target drop DP corresponds to the peak value for the intensity distribution that drop detection module 420 detects.In some embodiments
In, drop detection module 420 is photodiode, and the photon for reflecting and/or scattering according to detection target drop DP generates
Electric signal.Therefore, drop detection module 420 can detect when that target drop has passed through position P.
Drop detection module 420 is detected into the time t that target drop passes through position P0It is provided to timing and energy measurement mould
Block 430.When target drop reaches lasing region ZE and heated by excitation laser LR2, the material of target drop can be ionized into
For plasma, extreme ultraviolet radiation is radiated.The radiation of this extreme ultraviolet is detected by timing and energy measurement module 430.
In embodiment, timing and energy measurement module 430 include detector, are generating plasma simultaneously to detect
Generated extreme ultraviolet power.In some embodiments, aforesaid detector includes two pole of photoelectricity of photodiode or optical filtering
Pipe, is converted to electric signal for the energy for being incident to photon.In embodiment, detector also includes radiating extreme ultraviolet by exposing
Fixation position in optical tool reflexes to the reflecting mirror of photodiode.
In embodiment, timing and energy measurement module 430 are to estimate that extreme ultraviolet radiant power reaches peak value
Time trad.Then, the excitation arteries and veins for subsequent target drop is triggered using the target liquid drop speed calculated by equation (1)
Punching.Technical staff in disclosure technical field it should be appreciated that in order to estimate extreme ultraviolet power reach peak value when
Between, it is not necessarily intended to measurement generated absolute extreme ultraviolet power while each plasma generates, and extreme ultraviolet
Rate of power change is enough the precise time that estimation extreme ultraviolet power reaches peak value.
The speed of target drop is calculated based on the peak value in extreme ultraviolet energy, and the measurement of this speed is to trigger
The excitation pulse of next target drop.In embodiment, timing and energy measurement module 430 are further to utilize equation
(1) to calculate the precise time that next target drop reaches lasing region ZE, and trigger signal is provided to excitation laser source 300,
To control the triggered time of excitation laser LR2.
In embodiment, the speed of the target drop DP supplied from nozzle is substantially the same.In this calculating, according to this reality
Example is applied, when target drop marches to lasing region from nozzle, target drop generally maintains identical speed.In addition in this embodiment
In, excitation laser is considered as complete stability, and the lasting period of each pulse and energy are all same with previous pulsion phase.This
Outside, in this embodiment, the Energy distribution of the extreme ultraviolet radiated by plasma is that setting is big with each excitation pulse
It causes identical.In addition, in this embodiment, the position of drop irradiation module and drop detection module is the rail relative to target drop
Mark is steadily fixed.Furthermore the luminous intensity in this embodiment, from drop irradiation module is considered as remaining unchanged.However, just
For specific target drop, one or more above-mentioned conditions may change.
For example, if when drop irradiation module (DIM) and/or drop detection module (DDM) deviate or drop irradiation
When the strength retrogression of module light source, the precision of detection target liquid drop speed can be reduced, thereby increases and it is possible to the signal of mistake can be generated.Separately
Outside, if the signal of target drop is too weak, drop detection module possibly can not detect target drop, will lead to leakage and do not trigger pre- arteries and veins
It rushes (Tfire).On the other hand, if the signal from plasma spark is too strong, it may cause the signal offset of target drop,
And it causes to aim at unstable.
Fig. 2 B is illustrated in the simulation of the drop signal and the signal from plasma spark of drop detection module detection.Such as
Described in other paragraphs of the disclosure, if the signal from plasma spark is too strong, the offset of drop signal may cause, or in the future
It is mistakenly considered drop signal from the signal of plasma spark, leads to accidentally penetrating for excitation laser.On the other hand, if target drop
Signal is too weak, may be mistaken as the signal from plasma spark, and excitation laser possibly can not hit target, cause to mark
The waste of target drop and occurs the gap (gap) being not intended to when generating extreme ultraviolet.
It should be understood that the irradiation of control drop and/or detection module make the signal from target drop more stable, to change
The stability of kind EUV light source.
Fig. 3 shows the drop irradiation module and/or drop detection mould of the control EUV light source according to the embodiment of the present disclosure
The flow chart of the method S300 of block.The method includes: in operation S310, to irradiate target liquid from the light of drop irradiation module
Drop.In various embodiments, drop irradiation module is continuous wave laser.In other embodiments, drop irradiation module is pulse
Laser.The wavelength of drop irradiation module is not particularly limited.In embodiment, the optical wavelength of drop irradiation module is in electricity
In the visible light region of magnetic frequency spectrum.In some embodiments, the wavelength of drop irradiation module is about 1070nm.In various embodiments
In, drop irradiation module has the mean power in the range of about 1W to about 50W.In some embodiments, drop irradiates
Module generates the light beam with uniform irradiation profile.For example, in embodiment, drop irradiation module generation light curtain, and in
Entire profile has roughly the same intensity.In various embodiments, the width of the light beam as caused by drop irradiation module is situated between
In the range of about 10 μm to about 300 μm.
As described in other paragraphs of the disclosure, target drop can reflect and/or scattered radiation to target drop light.Citing and
Speech, in operation S320, drop detection module can detect the light of reflection and/or scattering.In some embodiments, drop detection mould
Block includes photodiode, is designed as detecting the wavelength of the light from drop irradiation module.In some embodiments, drop is examined
Surveying module further includes one or more optical filters, to filter the light of specific frequency.For example, in embodiment, drop detection
Module includes the optical filter to stop extreme ultraviolet to radiate.In another embodiment, drop detection module includes to stop
The optical filter of all frequencies other than the light from drop irradiation module.
In operation S330 in, determine detection light (light for being reflected and/or being scattered by target drop) intensity whether between
In acceptable range.It in the embodiment of detection light, is received based on photodiode is worked as by target using photodiode
When the light of drop reflection and/or scattering, the current value and/or voltage value that photodiode generates are determined.In some realities
It applies in example, drop detection module includes logic circuit, is designed to when the intensity of detection is not in acceptable range, is generated
Scheduled signal.For example, when the intensity of detection is less than specific threshold, scheduled signal can be generated.The threshold value example of intensity
As for the minimum strength as desired by the light that target drop reflects and/or scatters, can suitably be distinguished with plasma spark.?
In some embodiments, determined based on the mean intensity of a large amount of target drops (such as: 1000 or 10000 target drops) by
Minimum strength desired by the light of the reflection of target drop and/or scattering.In some embodiments, it is contemplated that minimum strength be, for example,
Less than the standard deviation or two standard deviations of the mean intensity determined by a large amount of target drops.
If the luminous intensity of detection is not in acceptable range, in operation S340, drop irradiation is automatically adjusted
The parameter of module finally makes the luminous intensity of detection between acceptable model to promote or reduce the luminous intensity of irradiation target drop
In enclosing.
In various embodiments, the parameter of drop irradiation module for example, to the light source (example in drop irradiation module
Input voltage and/or electric current such as: laser), control leave the slit width of the light quantity of drop irradiation module, drop irradiation module
Aperture and drop irradiation module angle and/or tilting value.In some embodiments, using design to control drop photograph
The controller for penetrating the various parameters of module carrys out adjusting parameter.For example, in embodiment, controller is coupled to control and leaves
The mechanism of the slit of the light quantity of drop irradiation module and/or the inclination of control drop irradiation module and/or angle.In this embodiment
In, controller is coupled to drop detection module, and the luminous intensity because that should detect not in acceptable range when by liquid
Prearranged signals caused by detection module is dripped, the inclination of slit width and/or drop irradiation module is adjusted.
In some embodiments, controller is logic circuit, is designed to receive the signal from drop detection module, and take
Certainly in received signal one or more components of drop irradiation module (such as described in slit and/or the disclosure other paragraphs
Tilt control mechanism) transmitting control signal, automatically to adjust one or more parameters of drop irradiation module.
Fig. 4 A schematically shows the target drop speed being used to measure in EUV light source according to the embodiment of the present disclosure
The device of degree.In embodiment, aforementioned device include drop irradiation module 410, drop detection module 420, controller 450 and
Processor 430.
In various embodiments, drop irradiation module 410 includes radiation source 415, tilt control mechanism 413 and slit control
Mechanism 417 processed.The inclination of tilt control mechanism 413 (also referred to as " wing drop ") control radiation source 415.In various embodiments
In, wing drop 413 is stepper motor, is coupled to the radiation source 415 (such as: laser) of drop irradiation module 410, and mobile spoke
Source 415 is penetrated to change the incidence angle for light (or radiation) L for injecting target drop DP and (and have to change and enter drop detection module
The effect of the amount of the 420 light R for being reflected by target drop DP and/or being scattered).In some embodiments, wing drop 413 includes
Piezoelectric actuator.
Slit control mechanism 417 (also referred to as " automatic slit ") controls the light quantity for leaving radiation source 415.In embodiment,
Slit or aperture (aperture) 414 are to be set to radiation source 415 and irradiate between the position P of target drop DP.In some realities
It applies in example, as shown in Figure 4 B, slit control mechanism 417 includes moveable opaque barrier 414, with several slits
414a, 414b, 414c or various sizes of opening.For example, when controller 450 determines to be examined in drop detection module 420
The luminous intensity measured is less than acceptable range, the meeting travelling slit control mechanism 417 of controller 450, so that wider slit
414a is located at light and leaves on the path of radiation source 415, allows more light irradiation target drop DP, and increase intensity detected.
On the other hand, if it is decided that the luminous intensity detected by drop detection module 420 is greater than acceptable range, controller 450
Meeting travelling slit control mechanism 417 is reduced whereby so that relatively narrow slit 414c is located at light and leaves on the path of radiation source 415
Intensity detected.In this embodiment, the parameter of the drop irradiation module 410 adjusted by controller 450 is to mark positioned at irradiation
The width of slit 414 on the path of the light L of target drop.
In some embodiments, as shown in Figure 4 C, automatic slit 417 includes iris-type diaphragm (iris diaphragm)
414' is followed by the single slit 414a' being set between radiation source 415 and position P.In this embodiment, slit control mechanism
417 function is to change the total light intensity degree for injecting single slit 414a' by iris-type diaphragm 414'.For example, if control
It is higher that device 450 determines that detected luminous intensity needs, then will start iris-type diaphragm 414' to increase aperture scale, permit whereby
Perhaps more light pass through single slit 414a', and intensity detected is caused to increase.On the other hand, if the judgement of controller 450 is examined
The luminous intensity measured needs to reduce, then will start iris-type diaphragm 414' with stop down size, eventually lead to detected strong
Degree is reduced.In this embodiment, the parameter of the drop irradiation module 410 adjusted by controller 450 is positioned at irradiation target drop
The aperture of iris-type diaphragm 414' on the path of the light L of DP.
Although technical staff in disclosure technical field it should be noted that as shown in Figure 4 A, wing drop 413 with from
Dynamic slit 417 is separated with radiation source 415, and in some embodiments, wing drop 413 and automatic slit 417 can be with radiation sources
415 integrate, to form single drop irradiation module 410.In this embodiment, it can suitably adjust in controller 450
With the coupling between drop irradiation module 410, to reach and identical result disclosed herein.
Therefore, controller 450 sets the luminous intensity detected of drop detection module 420, to allow during one continues
Time steadily detects target drop.As described in other paragraphs of the disclosure, in the specific target drop of detection and detection by previous
The time difference between extreme ultraviolet peak value that target drop generates immediately can provide target drop by position P and lasing region ZE it
Between speed.For stablizing and generating extreme ultraviolet radiation, the accurate target liquid drop speed that measures is important, because it allows to mark
It is synchronous between the excitation pulse of arrival with the lasing region of target drop.In embodiment, it is set in controller 450 detected strong
In the case where degree, processor 430 (also referred to as " timing and energy measurement module (timing and energy measurement
Module) " or " TEM2 ") measurement target drop speed.
In the embodiments of the present disclosure, by automatically optimizing drop illumination and/or detection module, it is possible to improve target
The measurement of liquid drop speed, and improve synchronous between excitation pulse and target drop.Therefore, it is possible to improve based on laser excitation
The efficiency and stability of the EUV light source of plasma.
It is to be understood that the disclosure may not illustrate institute it is advantageous, and and not all embodiment or example all have it is specific
Advantage, and other embodiments or example can provide different advantages.
According to an embodiment of the disclosure, a kind of method controlling extreme ultraviolet (EUV) radiation source includes: with from drop
The light of irradiation module irradiates target drop, and detects the light for being reflected and/or being scattered by target drop.The method includes: to determine inspection
The intensity of light is surveyed whether in tolerance interval.In response to judgement of the intensity not in tolerance interval of detection light, automatically
Ground adjusts the parameter of drop irradiation module, so that the intensity of detection light is fallen into tolerance interval.In some embodiments, it irradiates
The wavelength of the light of target drop is about 1070nm.In some embodiments, the light source from drop irradiation module is laser.One
In a little embodiments, parameter is the slit width of the slit between drop irradiation module and target drop.In some embodiments
In, parameter is the tilt angle of drop irradiation module.In some embodiments, the tolerance interval of intensity includes that minimum threshold is strong
Degree.In some embodiments, controller determines whether light detected controls in the tolerance interval of intensity, and automatically
The parameter for adjusting drop irradiation module and/or drop detection module, so that luminous intensity detected is in tolerance interval.
According to another embodiment of the present disclosure, the device for measuring target liquid drop speed in the source extreme ultraviolet (EUV) includes liquid
Drip irradiation module, drop detection module, controller and processor.Drop irradiation module includes radiation source, to be pre-positioned
Set irradiation target drop.Drop detection module is to detect the radiation reflected and/or scattered by target drop.It is coupled to liquid
Drop irradiation module controller be design with determine drop detection module radiation intensity detected whether connecing between intensity
By the judgement in range, and in response to intensity detected not in tolerance interval, drop irradiation module is automatically adjusted
Parameter.Processor is the speed to determine target drop based on the time of drop detection module detection radiation.In some realities
It applies in example, drop irradiation module includes adjustable slit, and the radiation from radiation source passes through aforementioned slots, and wherein aforementioned ginseng
Number is the slit width of adjustable slit.In some embodiments, drop irradiation module further includes be coupled to radiation source automatic
Leaning device, wherein aforementioned parameters are the tilt angle of radiation source.In some embodiments, processor is to further base
The speed of drop target is determined in the extreme ultraviolet radiation intensity generated by EUV light source.In some embodiments, radiation source
Including laser.In some embodiments, the radiation wavelength from radiation source is about 1070nm.In some embodiments, controller
It is designed as automatically adjusting the parameter of drop detection module, so that drop detection module radiation intensity detected is between can connect
By in the range of.
According to the another embodiment of the disclosure, the device for generating extreme ultraviolet (EUV) radiation includes droplet generator, drop
Irradiation module, drop detection module and controller, wherein droplet generator is to generate target drop.Drop irradiation module
Including radiation source, adjustable iris aperture and wing drop mechanism.Radiation source is to irradiate target drop in predetermined position.It comes from
The radiation of radiation source is by adjustable iris aperture, and wing drop mechanism is coupled to radiation source.Drop detection module is to examine
Survey the radiation reflected and/or scattered by target drop.Controller is design to determine that the radiation detected of drop detection module is strong
Whether degree is in tolerance interval, and the judgement in response to intensity detected not in tolerance interval, automatically adjusts
The parameter of drop irradiation module.In some embodiments, aforementioned parameters are the opening of adjustable iris aperture.In some embodiments,
Aforementioned parameters are the tilt angle of radiation source.In some embodiments, radiation source is laser.In some embodiments, spoke is come from
The radiation wavelength for penetrating source is about 1070nm.In some embodiments, controller is design automatically to adjust aforementioned parameters, so that
Drop detection module intensity detected is in tolerance interval.
Foregoing has outlined the component of many embodiments, understand technical staff in disclosure technical field more
The various aspects of the embodiment of the present disclosure.Technical staff in disclosure technical field is, it is to be appreciated that can be easily with disclosure reality
Apply based on example and design or change other techniques and structure, with realize purpose identical with the embodiment introduced herein and/or
Reach the advantage identical as the embodiment introduced herein.Technical staff in disclosure technical field is it will also be appreciated that these phases
Deng structure without departing from the disclosure design and range.It, can be to this under the premise of without departing substantially from the design and range of the disclosure
Open embodiment carries out various changes, displacement and variation.
Claims (1)
1. a kind of control method of extreme ultraviolet (EUV) radiation source, comprising:
To irradiate a target drop from the light of a drop irradiation module；
The light that detection is reflected and/or scattered by the target drop；
Determine an intensity of the light detected whether in a tolerance interval；And
If it is determined that the intensity of the light detected not in the tolerance interval of intensity, automatically adjusts drop photograph
A parameter of module is penetrated, so that the intensity of the light detected is fallen into the tolerance interval.
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| US16/029,408 US10969690B2 (en) | 2017-09-29 | 2018-07-06 | Extreme ultraviolet control system for adjusting droplet illumination parameters |
| US16/029,408 | 2018-07-06 |
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| CN109587918A true CN109587918A (en) | 2019-04-05 |
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| JP6646576B2 (en) * | 2013-11-15 | 2020-02-14 | エーエスエムエル ネザーランズ ビー．ブイ． | Radiation source |
| US10824083B2 (en) * | 2017-09-28 | 2020-11-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Light source, EUV lithography system, and method for generating EUV radiation |
| US10969690B2 (en) * | 2017-09-29 | 2021-04-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Extreme ultraviolet control system for adjusting droplet illumination parameters |
| US11340531B2 (en) | 2020-07-10 | 2022-05-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Target control in extreme ultraviolet lithography systems using aberration of reflection image |
| JP2024525355A (en) * | 2021-07-14 | 2024-07-12 | エーエスエムエル ネザーランズ ビー．ブイ． | Droplet detection metrology using metrology beam scattering |
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