CN109461815A - A kind of organic non-volatile memory device and preparation method thereof - Google Patents
A kind of organic non-volatile memory device and preparation method thereof Download PDFInfo
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- CN109461815A CN109461815A CN201811210181.5A CN201811210181A CN109461815A CN 109461815 A CN109461815 A CN 109461815A CN 201811210181 A CN201811210181 A CN 201811210181A CN 109461815 A CN109461815 A CN 109461815A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 55
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 27
- 238000009825 accumulation Methods 0.000 claims abstract description 25
- 229920000620 organic polymer Polymers 0.000 claims abstract description 19
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 claims abstract description 19
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 17
- 230000000903 blocking effect Effects 0.000 claims abstract description 16
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 230000004888 barrier function Effects 0.000 claims abstract description 10
- 229920000642 polymer Polymers 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 239000005977 Ethylene Substances 0.000 claims description 2
- 238000003860 storage Methods 0.000 abstract description 13
- 230000000052 comparative effect Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000006399 behavior Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
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Abstract
The present invention relates to a kind of organic non-volatile memory devices and preparation method thereof.The organic non-volatile memory device successively includes bottom gate thin film, silicon dioxide blocking layer, organic polymer α-methylstyrene accumulation layer, small organic molecule pentacene active layer and metal source and drain electrodes from bottom to up；The silicon dioxide blocking layer with a thickness of 50 ~ 100 nm, the organic polymer α-methylstyrene accumulation layer with a thickness of 8 ~ 20nm, the small organic molecule pentacene active layer with a thickness of 30 ~ 50nm.The present invention selects silica as barrier layer, organic polymer α-methylstyrene is as accumulation layer, small organic molecule pentacene is as active layer, and the organic non-volatile memory device preferably obtained to its thickness and growth temperature has good bipolarity storage characteristics, it is stored in information, the fields such as flexible electronic are with a wide range of applications.
Description
Technical field
The invention belongs to flexible organic electric technical fields, and in particular to a kind of organic non-volatile memory device and its
Preparation method.
Background technique
Organic non-volatile memory is a part important in organic electronic device, especially between last decade, is based on
The charge trap-type memory of polymer electret material has obtained more quickly development.It is compared to and uses metal nano
Grain floating gate type or ferroelectric polymers type memory, polymer electret type memory have better stability, repeatability and
Simple preparation process.It was noted that some memory devices using unipolarity organic semiconductor as active layer are shown
Good bipolarity storage characteristics；There are also captures and release that some memory devices only show minority carrier.For this
A little phenomenons, it is believed that on the one hand this and organic semiconductor/polymer electret interface potential barrier and polymer electret sheet
The property at the charge-trapping center of body has relationship；On the other hand, the transport behavior of the minority carrier in organic semiconductor and defeated
Transport mechanism has great influence.In conclusion systematically probing into influence of the transport behavior of minority carrier to storage performance is
It is highly desirable, this will deepen our understanding to the working principle of memory device, also will be realization low-work voltage, Gao Ke
Memory device by property provides thinking.
Therefore, a kind of transport behavior of minority carrier, and the polymer with preferable bipolarity storage characteristics are developed
Electret type memory has important research significance and application value.
Summary of the invention
The purpose of the present invention is to overcome the defects in the prior art and insufficient, provides a kind of organic non-volatile memory
Part.Organic non-volatile memory device provided by the invention selects silica as barrier layer, organic polymer Alpha-Methyl benzene
As accumulation layer, small organic molecule pentacene preferably obtains its thickness organic non-volatile ethylene as active layer
Property memory device have good bipolarity storage characteristics, information store, the fields such as flexible electronic have a wide range of applications
Prospect.
Another object of the present invention is to provide the preparation methods of above-mentioned organic non-volatile memory device.
For achieving the above object, the present invention adopts the following technical scheme:
A kind of organic non-volatile memory device successively includes bottom gate thin film, silicon dioxide blocking layer, organic from bottom to up
Polymer α-methylstyrene accumulation layer, small organic molecule pentacene active layer and metal source and drain electrodes；The silica resistance
Barrier with a thickness of 50~100nm, the organic polymer α-methylstyrene accumulation layer with a thickness of 8~20nm, it is described to have
Machine small molecule pentacene active layer with a thickness of 30~50nm.
The present inventor passes through repeatedly the study found that selecting silica as barrier layer, organic polymer α-first
As accumulation layer, small organic molecule pentacene preferably obtain as active layer, and to its thickness and growth temperature base styrene
The organic non-volatile memory device arrived has good bipolarity storage characteristics, this is primarily due to barrier layer and accumulation layer
The size of thickness effect effective electric field, the thickness and growth temperature of active layer will lead to the size of mobility.Such as the thickness of active layer
Degree is too big, and mobility change is little, leads to the wasting of resources；Thickness is too small, can not be paved with whole surface, mobility is caused to reduce；
And the growth temperature of active layer is excessive or too small to the decline that will lead to mobility.
It should be understood that the bottom gate thin film of organic non-volatile memory device field routine, source-drain electrode are used equally for
In the present invention, bottom gate thin film, source-drain electrode thickness also can be selected this field routine thickness.
Preferably, the bottom gate thin film is one of silicon, gold, silver or aluminium.
It is further preferable that the bottom gate thin film is P (100) silicon of heavy doping.
P (100) silicon of heavy doping is conducive to the addition of voltage, and structural stability is good, and cost is relatively low.
Preferably, the source-drain electrode is one of copper, gold, silver or aluminium.
It is further preferable that the source-drain electrode is copper source drain electrode.
Copper source drain electrode is at low cost, and preferable in surface hardness, not easy to scratch, and Yi Zhazhen is conducive to stable testing.
Preferably, the silicon dioxide blocking layer with a thickness of 50nm.
Preferably, the organic polymer α-methylstyrene accumulation layer with a thickness of 12nm.
Preferably, the small organic molecule pentacene active layer with a thickness of 40nm.
To silicon dioxide blocking layer, organic polymer α-methylstyrene accumulation layer or small organic molecule pentacene active layer
Thickness carry out preferably, can further promote the bipolarity storage characteristics of organic non-volatile memory device.
The preparation method of organic non-volatile memory device, includes the following steps:
S1: selecting the bottom gate thin film for having grown silicon dioxide blocking layer, carries out UV/O to silicon dioxide blocking layer3It lives
Change；
S2: obtaining spin coating poly alpha methylstyrene solution on barrier layer in silica, at 40~150 DEG C anneal 5~
15min obtains organic polymer α-methylstyrene accumulation layer；
S3: pentacene is deposited in organic polymer α-methylstyrene accumulation layer and obtains active layer；
S4: deposited metal obtains metal source and drain electrodes on active layer.
It is preparation method simple process mild condition provided by the invention, at low cost.
The of the invention signified bottom gate thin film for having grown silicon dioxide blocking layer either commercialization product, can also be with
Selection grows silicon dioxide blocking layer in bottom gate thin film.
Preferably, UV/O described in S13The process of surface activation process is the silicon dioxide blocking layer apart from ultraviolet
1~the 10min of ultraviolet light for the use of wavelength being 185~245nm at 10~40cm of lamp.
Preferably, in poly alpha methylstyrene solution described in S2 poly alpha methylstyrene mass concentration be 0.05~
0.5%.
Preferably, the process of deposition described in S3 is to be deposited with the rate of 0.01~0.05nm/s, when deposition described in
The temperature of organic polymer α-methylstyrene accumulation layer is 50~120 DEG C.
Application of the above-mentioned memory device in information storage and flexible electronic field is also within the scope of the present invention.
Compared with prior art, the invention has the following beneficial effects:
The present invention selects silica as barrier layer, and organic polymer α-methylstyrene is as accumulation layer, You Ji little
Molecule pentacene is as active layer, and the organic non-volatile memory device preferably obtained to its thickness has good pair
Polarity storage characteristics is stored in information, and the fields such as flexible electronic are with a wide range of applications.
Detailed description of the invention
Fig. 1 is bottom gate thin film/silicon dioxide blocking layer/organic polymer Alpha-Methyl benzene second that the embodiment of the present invention 1 provides
The signal of alkene accumulation layer/small organic molecule pentacene active layer/metal source and drain electrodes structure organic non-volatile memory device
Figure；
Fig. 2 is the relationship that the memory device that the embodiment of the present invention 3,7 and 8 provides scans back and forth number and threshold voltage shift
Figure；
Fig. 3 is the relational graph that the memory device that Examples 1 to 7 provides scans back and forth number and threshold voltage shift；
Fig. 4 is the channel resistance for the memory device that embodiment 3 provides, contact resistance, between " MVSC " and grain size
Relational graph；
Fig. 5 is that the memory window for the memory device that embodiment 3,7 and 8 provides compares.
Specific embodiment
Below with reference to embodiment, the present invention is further explained.These embodiments are merely to illustrate the present invention rather than limitation
The scope of the present invention.Test method without specific conditions in lower example embodiment usually according to this field normal condition or is pressed
The condition suggested according to manufacturer；Used raw material, reagent etc., unless otherwise specified, being can be from the business such as conventional market
The raw materials and reagents that approach obtains.The variation for any unsubstantiality that those skilled in the art is done on the basis of the present invention
And replacement belongs to scope of the present invention.
Embodiment 1~18 and comparative example 1
The present embodiment provides a kind of organic non-volatile memory device, such as Fig. 1 successively includes that bottom gate is electric from top to bottom, 1,
Silicon dioxide blocking layer 2, organic polymer α-methylstyrene accumulation layer 3, small organic molecule pentacene active layer 4 and source metal
Drain electrode 5.
The organic non-volatile memory device the preparation method is as follows:
S1: substrate cleaning and processing
The bottom gate thin film (P (100) silicon wafer of heavy doping) for having certain thickness silicon dioxide layer of 15 × 15mm is chosen, is used
Acetone, isopropanol and deionized water successively clean 5min, according to twice of this sequence cleaning, finally with sample existing after being dried with nitrogen
The ultraviolet light 5min for the use of wavelength being 220nm at ultraviolet lamp 10cm.
S2: preparation accumulation layer
Poly alpha methylstyrene is dissolved in the poly alpha methylstyrene solution that certain mass concentration C is made into toluene, two
Silicon oxide layer surface spin coating poly alpha methylstyrene solution film forming, 40-80-120 DEG C of ladder-elevating temperature, heating rate be 2.5 DEG C/
Min, then poly alpha methylstyrene film is made as accumulation layer after carrying out annealing 5min at 120 DEG C.
S3: active layer is prepared
Sample obtained by step S2 (is sequentially laminated with silica layer insulating and poly alpha methylstyrene in bottom gate thin film
Accumulation layer) T (50~120 DEG C) are heated to, use thermal evaporation on poly alpha methylstyrene film with 0.01~0.05nm/s
Rate deposit certain thickness pentacene thin film as active layer.
S4: source-drain electrode is prepared
Use thermal evaporation in pentacene thin film using the metal electrode of the rate deposition 50nm thickness of 0.02nm/s as source
Drain electrode.
The preparation method of comparative example 1 is similar with embodiment.
Specifically, the structure composition and preparation condition of each embodiment and comparative example such as the following table 1.
The structure composition and preparation condition of 1 embodiment 1~18 of table
The storage characteristics for the memory device that embodiment 1~18 provides is tested.
Such as Fig. 2, the relational graph of number and threshold voltage shift is scanned back and forth for the memory device that embodiment 3,7 and 8 provides.
It can be seen that active layer carries out the organic non-volatile memory device that thermal evaporation obtains at various temperatures all to be had preferably
Write efficiency, wherein the write efficiency highest of embodiment 3, scans back and forth number 1 time write-in, and device just shows double well
Polarity storage characteristics.It secondly is embodiment 8 and embodiment 7.
Such as Fig. 3, the relational graph of number and threshold voltage shift is scanned back and forth for the memory device that embodiment 3 provides.From figure
In it is found that each embodiment provide organic non-volatile memory device all there is preferable write efficiency, wherein working as source-drain electrode
Between the channel length that is formed more in short-term, scan back and forth that number is fewer, device just shows better bipolarity storage characteristics.
Similarly, embodiment 1~18 all exists with similar effect.
It is channel resistance, contact resistance, the relational graph between " MVSC " and grain size such as Fig. 4.From fig. 4, it can be seen that
The change of active layer growth temperature will lead to the generation of certain law, such as active layer crystal grain is bigger, and mobility is bigger, channel
Resistance and contact resistance are smaller, reach that the scanned back and forth number of full open position is fewer, and window is also bigger.
Table 4 is corresponding numerical value.From Fig. 4 and table 2 it is found that crystal grain is bigger, mobility is bigger, channel resistance and contact resistance
It is smaller, reach that the scanned back and forth number of full open position is fewer, and window is also bigger.
It is that the memory window for the memory device that embodiment 3,7 and 8 provides compares such as Fig. 5.It is stored with field effect transistor cast
Unlike device, the capacitive memory device that these embodiments provide almost memory window having the same.Flat-band voltage
(Vfb) can be deviated toward positive and negative two voltage directions, show extraordinary bipolarity memory characteristics, similarly, embodiment 1-
18 all exist with similar effect.This means that capacitive memory device can be injected in enough minority carrier electronics
In P α MS.Therefore, minority carrier electronics transporting in vertical direction is not limited.
As a comparison, it under room temperature environment, using Agilent B1500A high-precision semiconductor analyzer prepared by comparative example 1
Memory device also tested.As a result, it has been found that comparative example 1 is unfavorable for active layer crystal grain since silicon dioxide blocking layer is too thick
Grow up, need scan back and forth number become it is more, memory window is smaller.
To sum up, memory device provided by the invention shows good bipolarity storage characteristics.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.
Claims (10)
1. a kind of organic non-volatile memory device, which is characterized in that from bottom to up successively include bottom gate thin film, silica resistance
Barrier, organic polymer α-methylstyrene accumulation layer, small organic molecule pentacene active layer and metal source and drain electrodes；Described two
Silica barrier layer with a thickness of 50 ~ 100nm, the organic polymer α-methylstyrene accumulation layer with a thickness of 8 ~ 20nm,
The small organic molecule pentacene active layer with a thickness of 30 ~ 50nm.
2. organic non-volatile memory device according to claim 1, which is characterized in that the bottom gate thin film is silicon, gold, silver
Or one of aluminium.
3. organic non-volatile memory device according to claim 2, which is characterized in that the bottom gate thin film is heavy doping
P(100) silicon.
4. organic non-volatile memory device according to claim 1, which is characterized in that the source-drain electrode is copper, gold, silver
Or one of aluminium.
5. organic non-volatile memory device according to claim 1, which is characterized in that the thickness of the silicon dioxide blocking layer
Degree is 50 nm.
6. organic non-volatile memory device according to claim 1, which is characterized in that the organic polymer Alpha-Methyl benzene
Ethylene accumulation layer with a thickness of 12nm.
7. organic non-volatile memory device according to claim 1, which is characterized in that the small organic molecule pentacene has
Active layer with a thickness of 40nm.
8. the preparation method of any organic non-volatile memory device of claim 1 ~ 7, which is characterized in that including walking as follows
It is rapid:
S1: selecting the bottom gate thin film for having grown silicon dioxide blocking layer, carries out UV/O to silicon dioxide blocking layer3It is activated；
S2: obtaining spin coating poly alpha methylstyrene solution on barrier layer in silica, and the 5 ~ 15min that anneals at 40 ~ 150 DEG C must have
Machine polymer α-methylstyrene accumulation layer；
S3: pentacene is deposited in organic polymer α-methylstyrene accumulation layer and obtains active layer；
S4: deposited metal obtains metal source and drain electrodes on active layer.
9. preparation method according to claim 8, which is characterized in that poly- α-first in poly alpha methylstyrene solution described in S2
The mass concentration of base styrene is 0.05 ~ 0.5%.
10. preparation method according to claim 8, which is characterized in that the process of deposition described in S3 is with 0 .01 ~ 0
.05 the rate of nm/s is deposited, when deposition the temperature of the organic polymer α-methylstyrene accumulation layer be 80 ~ 120
℃。
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110518119A (en) * | 2019-08-21 | 2019-11-29 | 华南师范大学 | A kind of flexible organic non-volatile memory device and its preparation method and application preparing lanthana dielectric layer based on solwution method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140061763A1 (en) * | 2012-09-05 | 2014-03-06 | Misako Morota | Nonvolatile semiconductor memory device and method of manufacturing the same |
| CN104409633A (en) * | 2014-10-31 | 2015-03-11 | 南京邮电大学 | Organic film transistor and manufacturing method thereof |
| CN105591029A (en) * | 2016-03-24 | 2016-05-18 | 华南师范大学 | Organic non-volatile memory device based on high K materials and preparation method thereof |
-
2018
- 2018-10-17 CN CN201811210181.5A patent/CN109461815A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140061763A1 (en) * | 2012-09-05 | 2014-03-06 | Misako Morota | Nonvolatile semiconductor memory device and method of manufacturing the same |
| CN104409633A (en) * | 2014-10-31 | 2015-03-11 | 南京邮电大学 | Organic film transistor and manufacturing method thereof |
| CN105591029A (en) * | 2016-03-24 | 2016-05-18 | 华南师范大学 | Organic non-volatile memory device based on high K materials and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| KANG-JUN BAEG, ET AL.: "Organic Non-Volatile Memory Based on Pentacene Field-Effect Transistors Using a Polymeric Gate Electret", 《ADVANCED MATERIALS》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110518119A (en) * | 2019-08-21 | 2019-11-29 | 华南师范大学 | A kind of flexible organic non-volatile memory device and its preparation method and application preparing lanthana dielectric layer based on solwution method |
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