CN109326734B - A kind of converter of passive visible light to infrared light - Google Patents
A kind of converter of passive visible light to infrared light Download PDFInfo
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- CN109326734B CN109326734B CN201811130400.9A CN201811130400A CN109326734B CN 109326734 B CN109326734 B CN 109326734B CN 201811130400 A CN201811130400 A CN 201811130400A CN 109326734 B CN109326734 B CN 109326734B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/11—Arrangements specific to free-space transmission, i.e. transmission through air or vacuum
- H04B10/114—Indoor or close-range type systems
- H04B10/116—Visible light communication
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
The invention belongs to converter technology fields, and disclose a kind of passive visible light to infrared light converter, the converter includes photovoltaic detector, circuit board and silicon based photon chip, and photovoltaic detector is for absorbing visible light and the photon of the visible light of absorption being converted to voltage signal output；Voltage signal is passed to silicon based photon chip for connecting photovoltaic detector and silicon based photon chip by circuit board；Silicon based photon chip includes electrooptic modulator and coupling grating, the coupled grating inlet of infrared light enters in electrooptic modulator, electrooptic modulator includes electrode, micro-loop waveguide and coupled waveguide, electrode is connect with circuit board, coupled waveguide from infrared light for that will be transferred into micro-loop waveguide, micro-loop waveguide is modulated the information so that infrared light carrying visible light under the driving of voltage signal to infrared light, and the passive conversion of infrared light is realized with this.Through the invention, passive conversion is expeditiously realized, structure is simple, and production cost is low.
Description
Technical field
The invention belongs to converter technology fields, more particularly, to a kind of converter of passive visible light to infrared light.
Background technique
Visible light communication extends the spectral range of wireless communication, provides the novel high speed with energy saving and confidentiality
Communication obtains quick development.And to carry the whole world most absolutely for mature infrared frequency range optical fiber telecommunications system
Several data traffics.By way of it will be seen that optical information is transformed into infrared optical frequencies, realize that visible light communication and optical fiber are logical
The direct connection of letter, has great significance.It on the other hand, can be agricultural planting, the sun to the monitoring of natural lighting situation
Energy stock assessment etc. provides data and supports, needing to detect remote unmanned regional Lighting information, simultaneously remote transmission goes back to central office.It will
Lighting information is transformed into infrared light, and is a kind of feasible program of low cost by the transmission of long range low loss fiber, to adapt to
Depopulated zone environment also needs to realize passive conversion.
Currently, traditional visible light is usually the parametric process of Application Optics nonlinear effect to infrared light conversion plan,
The problems such as that there are transfer efficiencies is low, energy consumption is high, must be laser by conversion light, the heavy pumping light for needing active equipment to provide.Cause
This, realizes that the device of visible light to the efficiently passive conversion of infrared light has important practical value.
Summary of the invention
Aiming at the above defects or improvement requirements of the prior art, the present invention provides a kind of passive visible lights to infrared light
Converter, by the structure design and topology layout to its key component photovoltaic detector and silicon based photon chip, so that visible
Light by photovoltaic detector is converted to voltage signal after being absorbed, which is entered silicon based photon chip, and modulation is electric by silicon substrate
The infrared light of optical modulator, thus obtain carry visible light information infrared light, with this realize visible light to infrared light height
Passive conversion is imitated, and has the characteristics of fiber optic communication long distance transmission.
To achieve the above object, it is proposed, according to the invention, provide a kind of converter of passive visible light to infrared light, feature
It is, which includes photovoltaic detector, circuit board and silicon based photon chip, wherein
The photovoltaic detector is for absorbing visible light energy and the signal of the visible light of absorption being converted to voltage simultaneously
Signal output；The circuit board transmits the voltage signal for connecting the photovoltaic detector and silicon based photon chip
To the silicon based photon chip；
The silicon based photon chip includes electrooptic modulator and coupling grating, and the coupling grating includes outlet and entrance,
The infrared light enters in the electrooptic modulator through the entrance, and the electrooptic modulator includes electrode, micro-loop waveguide and coupling
Multiplex is led, and the electrode is connect with the circuit board, for receiving the voltage signal from the circuit board and passing it to
In the PIN junction of the micro-loop waveguide, the coupled waveguide is used for the infrared optical transport entered from the entrance and is coupled into
In the micro-loop waveguide, the micro-loop waveguide PIN junction injects carriers into the micro-loop waveguide after receiving the voltage signal
Waveguide in the refractive index of the waveguide is changed, refractive index change after the waveguide to the infrared light carry out
Modulation, so that the infrared light carries the information including intensity or number of the visible light, the carrying visible light
The infrared light of information is exported from the outlet of the coupling grating, realizes the passive conversion of the visible light to infrared light with this.
It is further preferred that the photovoltaic detector successively includes substrate, conductive substrates, separation layer, electronics from bottom to up
Absorbed layer, separate layer and hole absorption layer, the separation layer are used to for the conductive substrates and Electron absorption layer being isolated, and described point
Interlayer is used to separate on the Electron absorption layer and hole absorption layer, is provided with positive electrode and negative electricity in the conductive substrates
Pole, the hole absorption layer are connected with the positive electrode, and the Electron absorption layer is connected with the negative electrode, the Electron absorption
Layer, separate layer to hole absorption layer in filled with absorb visible light material, it is seen that light is under the photovoltaic detector
Side's irradiation is absorbed by the material for absorbing visible light across the substrate and conductive substrates and generates carrier, and the electronics is inhaled
It receives layer and absorbs the electron-transport in the carrier to the negative electrode, the hole absorption layer absorbs the sky in the carrier
Cave is transferred to the positive electrode, forms voltage signal between the negative electrode and positive electrode with this.
It is further preferred that the material for absorbing visible light preferably uses perovskite, the material of the Electron absorption layer
Preferably silica, the separate layer preferably use zirconium dioxide, and the hole absorption layer preferably uses carbon, and the electronics is inhaled
Receive layer, separate layer to hole absorption layer in be filled with perovskite, correspondingly, the photovoltaic detector use perovskite photovoltaic
Detector.
It is further preferred that the Electron absorption layer, separate layer to and hole absorption layer surface area preferably use 1cm2
~1.2cm2, so as to improve the output voltage of the photovoltaic detector, while avoiding surface area is excessive from reducing the photovoltaic detection
The speed of response of device.
It is further preferred that the driving voltage of the electrooptic modulator preferably uses 0.9V~1.1V, so that the electric light tune
Device processed has truncation effect, removes the drop-out voltage hangover that the photovoltaic detector generates under visible optical drive with this.
It is further preferred that the circuit board is connected by bonding semiconductor metal wire with the electrode.
It is further preferred that the size of the circuit board top electrode is from one end close to the photovoltaic detector to close to institute
One end of electrooptic modulator is stated using gradually smaller design, the electrode size close to described electrooptic modulator one end is suitable for
The pad of the bond wire line.
It is further preferred that the converter is as a unit, the side that multiple converters are passed through into wavelength-division multiplex
Formula is connected on an optical fiber and forms multiunit converter, expands the process range of the visible frequency, Huo Zhezeng with this
The monitoring number of nodes for adding single fiber to support.
In general, through the invention it is contemplated above technical scheme is compared with the prior art, can obtain down and show
Beneficial effect:
1, the present invention using perovskite material photovoltaic detector can be provided with lesser size higher transfer efficiency and
Enough driving powers, silicon-based micro ring electrooptic modulator possesses low driving voltage, highly sensitive feature again, so that described can
It is light-exposed to infrared photoconverter only with the volume of coin-size, may be implemented after incoming fiber optic from receiving, be transformed into long-range biography
A whole set of defeated function；
2, the present invention does not need laser pump (ing) yet, can adapt to various environment, high efficiency turns without providing additional electric energy
Change, structure it is simple, lower production costs can be with single long-distance optical fiber simultaneously after setting to converter operation wavelength
Multiple converters of connecting are worked in a manner of wavelength-division multiplex.
Detailed description of the invention
Fig. 1 is converter structure schematic diagram of the passive visible light constructed according to the preferred embodiment to infrared light；
Fig. 2 is passive visible light constructed according to the preferred embodiment to the pictorial diagram of the converter of infrared light；
Fig. 3 is the structural schematic diagram of photovoltaic detector constructed according to the preferred embodiment；
Fig. 4 is passive visible light constructed according to the preferred embodiment to be illustrated to the course of work of the converter of infrared light
Figure；
Fig. 5 is constructed according to the preferred embodiment input visible light signal and the waveform for detecting infrared signal
Figure；
Fig. 6 is constructed according to the preferred embodiment to measure the red of this instance transfer device output using infrared photoelectric detector
The eye figure recorded on oscillograph after outer optical signal.
In all the appended drawings, identical appended drawing reference is used to denote the same element or structure, in which:
1- photovoltaic detector, 2- conductive tape, 3- circuit board, 4- bonding semiconductor metal wire, 5- silicon based photon chip, 6-
Electrooptic modulator, 61- electrode, 62- micro-loop waveguide, 63- coupled waveguide, 7- coupling grating
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below
Not constituting a conflict with each other can be combined with each other.
A kind of passive visible light including photovoltaic detector 1, conductive tape 2, circuit board 3, is partly led to the converter of infrared light
Body bond wire line 4, silicon based photon chip 5 are provided with electrooptic modulator 6 and coupling grating 7 on the silicon based photon chip,
In:
Photovoltaic detector 1 absorbs the visible light of irradiation and generates corresponding voltage signal at the two poles of the earth of the photovoltaic detector,
The voltage is transmitted on printed circuit board 3 by conductive tape 2；
Circuit on circuit board 3 uses gradual design by electrode size, and one end size close to detector 1 is larger, leans on
The electrode size of nearly photon chip is smaller, the electrode size class on the electrode size and silicon based photon chip 5 of photon chip
Seemingly, enable and provide pad required for bonding semiconductor metal wire 4 in the position close to silicon based photon chip 5 on circuit board 3,
Bonding semiconductor metal wire 4 is for connecting 3 and 5；Voltage signal caused by the photovoltaic detector 1 further passes through semiconductor
Bond wire line 4 is transferred on silicon based photon chip 5.
Electrooptic modulator 6 includes electrode 61, micro-loop waveguide 62 and coupled waveguide 63, and electrode 61 is connect with the circuit board 3,
For receiving the voltage signal from the circuit board 3 and passing it in the micro-loop waveguide 62, coupled waveguide 63 is used for
It will be transferred into the micro-loop waveguide 62 from the infrared light that entrance enters, micro-loop waveguide 62 is for keeping infrared light humorous wherein
Vibration, and the carrier injection for receiving PIN junction generates modulation, so that infrared light carries the information of the visible light, the carrying
The infrared light of the visible optical information is exported from the outlet of coupling grating 7, and the passive conversion of the infrared light is realized with this.
When on varying strength radiation of visible light to photovoltaic detector 1, the infrared light by electrooptic modulator by
Modulation, so that having corresponding intensity from the infrared light that coupling grating 7 exports；When the visible light digital signal through ovennodulation is shone
When being mapped on photovoltaic detector 1, the infrared light in electrooptic modulator by being modulated, so that from the output of coupling grating 7
Infrared light carries identical digital signal.
Preferably, photovoltaic detector 1 is photocell type photovoltaic detector, and particularly, the converter uses in the present embodiment
Perovskite photovoltaic detector, possessing height can be by light absorption transformation efficiency, the characteristics of high output driving power；Meanwhile the silicon substrate
Electrooptic modulator 6, particularly, this converter use silicon-based micro ring electrooptic modulator, possess low driving voltage, highly sensitive spy
Point, therefore, it is seen that light meets non-active operation condition to infrared photoconverter, do not need it is extraneous electric energy is provided, the energy such as laser, and
And total volume just corresponds to coin-size.
Preferably, the driving voltage that electrooptic modulator 6 is chosen is 0.9~1.1V, can to the truncation effect of input voltage
The drop-out voltage hangover that removal photovoltaic detector 1 generates under the driving of high speed visible light signal, improves visible light and turns to infrared light
The speed of response of parallel operation.
Preferably, the infrared light that electrooptic modulator 6 is modulated is single-frequency laser, and single mode optical fiber can be multiple with simultaneous transmission
The laser of frequency, multiple and different visible light to infrared photoconverter can be connected on same root long by way of wavelength-division multiplex
On single mode optical fiber, while the visible optical information of multiple spot is converted and transmitted in a wide range of in a distributed manner.
Fig. 2 is passive visible light constructed according to the preferred embodiment to the pictorial diagram of the converter of infrared light, such as Fig. 2 institute
To show, the black portions of perovskite photovoltaic detector 1 account for significant area, and black portions are the multilayered structure containing perovskite material,
Black portions area is about 1~1.2cm2, black portions area too big can reduce modulation rate for improving output voltage.
The actual size of converter is smaller, is equivalent to unitary coin-size.Wherein, perovskite is capable of providing very high transfer efficiency and foot
Enough high driving voltages.
Fig. 3 is the structural schematic diagram of photovoltaic detector constructed according to the preferred embodiment, as shown in figure 3, photovoltaic detection
Device successively includes that substrate, conductive substrates, separation layer, Electron absorption layer, separate layer and hole absorption layer, separation layer are used from bottom to up
In by conductive substrates and the isolation of Electron absorption layer, separate layer is used to separate on Electron absorption layer and hole absorption layer, conductive substrates
On be provided with positive electrode and negative electrode, hole absorption layer is connected with positive electrode, and Electron absorption layer is connected with negative electrode, Electron absorption
Layer, separate layer to hole absorption layer in filled with absorb visible light material, it is seen that light from the lower section of photovoltaic detector shine
It penetrates, the material for being absorbed visible light across substrate and conductive substrates, which absorbs, generates carrier, and Electron absorption layer absorbs in carrier
Electron-transport to negative electrode, hole absorption layer absorbs the hole transport in carrier to positive electrode, with this in negative electrode and just
Voltage signal is formed between electrode.
In the present embodiment, substrate is glass, and conductive substrates are electro-conductive glass, and separation layer is close titanium dioxide layer,
Electron absorption layer is the porous silica titanium layer of perovskite filling, and separate layer is the titanium dioxide zirconium layer of perovskite filling, and hole is inhaled
The carbon electrode layer that layer is perovskite filling is received, further illustrates the present invention below in conjunction with the present embodiment.
Perovskite photovoltaic detector is printable formula perovskite multilayered structure, and perovskite is for absorbing visible light, close two
On the transparent conducting glass layer of titanium oxide layer planographic on the glass substrate；Close titanium dioxide layer is for separating conduction
The porous silica titanium layer of glassy layer and upper layer, perovskite is filled into porous titanium dioxide layer, and the above is porous two
Titanium oxide layer, as Electron absorption layer, the pole for being transmitted electronically to conductive glass layer that perovskite is generated, hole is to upload
It is defeated；On porous silica titanium layer planographic porous titanium dioxide zirconium layer, as separate layer, by titanium dioxide layer and carbon electricity
Pole layer separates, so that positive and negative anodes are separated, adulterated with Ca and Ti ore among the zirconium dioxide；The top planographic porous carbon electricity
Pole layer, as hole absorption layer；It is filled with photoelectricity perovskite material in three layers of mesoporous material and carries out energy conversion.
When radiation of visible light is on three layers of mesoporous material, perovskite material absorbs photon and generates carrier, porous
Titanium dioxide layer absorbs electronics therein, and porous carbon electrode layer absorbs hole therein, can be in the perovskite photovoltaic detection
Device generates corresponding voltage output on separated transparent conducting glass the two poles of the earth.
The other side of the top of perovskite photovoltaic detector 1 is circuit board 3, is silicon based photon chip 5 above, on chip
Including high Q micro-loop electrooptic modulator 6 and vertical coupled grating 7.
Micro-loop electrooptic modulator 6 includes electrode, micro-loop waveguide and coupled waveguide, and the micro-loop waveguide of silicon substrate and coupled waveguide are made
For optical resonance and transmission apparatus；Micro-loop waveguide is used for so that infrared light carries out resonance wherein, in the inside of micro-loop waveguide and outer
Portion has carried out ion beam bombardment respectively and has made ion implanting, forms p-type and n-type region, and form PIN junction；It is raw above micro-loop
Silicon dioxide layer have been grown as protection, and through-hole has been reserved above p-type and n-type region, through-hole is connected with p-type and N-type respectively,
Filled with metal for being connected to p-type and N-type and metal electrode in through-hole；It is metal electrode board above silicon dioxide layer, when two p-types
When introducing voltage between N-type electrode, PIN junction can inject carrier to micro-loop waveguide, realize the modulation to infrared light.Infrared light
Output and input optical fiber carried out respectively with the coupling grating 7 at both ends it is vertical coupled, can be by light from side direct irradiation converter.
Perovskite photovoltaic detector 1 possesses height can be by light absorption transformation efficiency, the characteristics of high output driving power；Meanwhile
Silicon-based micro ring electrooptic modulator 6 possesses low driving voltage, highly sensitive feature.Therefore, the visible light is to infrared photoconverter
Meet non-active operation condition, extraneous offer electric energy, the energy such as laser are not provided.
Fig. 4 is passive visible light constructed according to the preferred embodiment to be illustrated to the course of work of the converter of infrared light
Figure, as shown in figure 4, natural lighting or the visible light generated by LED carry strength information or digital signal is radiated at photovoltaic and turns
It on parallel operation 1, is absorbed by perovskite material therein, and generates corresponding voltage signal at the two poles of the earth, which is connected calcium titanium
The conductive tape 2 of 1 the two poles of the earth of mine photovoltaic detector and 3 pad of printed circuit board is transmitted on printed circuit board 3.
Circuit on printed circuit board 3 gradual change and is directed to by silicon based photon chip 5 from pad so that on circuit board
Position close to silicon based photon chip 5 can provide the pad of very little, beat gold thread to electric light by 4 technique of bonding semiconductor metal wire
On the micro-nano metal electrode of modulator 6；Therefore the voltage signal generated can be also transmitted on micro-nano metal electrode, driving micro-loop electricity
Optical modulator.
The continuous infrared laser of the monochrome of communications band is inputted by single mode optical fiber, and passes through hanging down on silicon based photon chip 5
Straight coupling grating 7 is coupled in silica-based waveguides 63, and the light field in straight wave guide is coupled in micro-loop waveguide 62 generates resonance in turn,
When micro-loop waveguide is driven, free carrier is injected into micro-loop waveguide, is generated free carrier dispersion, is made micro-ring resonant wave
Long to change, this will change micro-loop modulator to the transmitance of the frequency laser, allow export infrared luminous intensity can with incidence
Light-exposed intensity is corresponding.
Monochromatic continuous infrared laser work is output and input in communications band by single mode optical fiber, thus can by it is long away from
From the remote transmission that single mode optical fiber carries out low-loss high-fidelity.And because working laser is single-frequency laser, single mode optical fiber can be same
When transmit the laser of multiple frequencies, therefore the visible light of multiple and different modulating frequencies can be multiple by wavelength-division to infrared photoconverter
Mode is connected on same root long-range single mode fiber, while in a distributed manner in a wide range of to the visible optical information of multiple spot
It is converted and is transmitted.
When on varying strength radiation of visible light to this visible light to infrared photoconverter, vertical coupled grating 7 is output to
Intensity measured by the infrared light of single mode optical fiber is corresponding with visual intensity；As shown in figure 4, when the visible light through ovennodulation
When digital signal is irradiated on this visible light to infrared photoconverter, what is inputted from single mode optical fiber is that unmodulated communication band is red
Outer light, and what is exported is then the communication band infrared light for carrying equalized digital signal.This process is exactly visible light to infrared
The course of work of photoconverter.
Fig. 5 is constructed according to the preferred embodiment input visible light signal and the waveform for detecting infrared signal
Figure, as shown in figure 5, waveform a is the visible light signal waveform of LED light source output, it is the square-wave signal of standard；Waveform b is photovoltaic
Detector receives the electric signal waveform exported after visible light, it can be seen that perovskite photovoltaic detector drives in high speed visible light signal
The dynamic lower drop-out voltage hangover generated, this is because what photronic high transformation efficiency and low recombination rate were determined；Waveform c is logical
Cross the infrared signal waveform of the converter, it can be seen that waveform reverts to the square-wave signal of more standard, this is because institute
The drop-out voltage of hangover can be removed to the truncation effect of input voltage with the drive voltage range of electric light micro-loop modulator, is improved
The speed of response of converter entirety.
Fig. 6 is constructed according to the preferred embodiment to measure the red of this instance transfer device output using infrared photoelectric detector
The eye figure recorded on oscillograph after outer optical signal, as shown in fig. 6, being received in simulation true environment using the converter is practical
Measured eye figure after OOK modulated signal and transmission, left column is to transmit the eye figure received back-to-back, and right column are to have passed through 5km
The eye figure received after single mode optical fiber transmission；From top to bottom the modulation rate of visible optical information be successively 40,80,160,
200kHz.These bright visible lights of eye chart opened can be realized the reception conversion to modulation visible light to infrared photoconverter
And transmission.With the increase of modulation rate, eye shape is gradually deteriorated, but still maintains opening, shows that modulation rate can be with
Reach 200kHz, can also be further increased under advanced modulation formats such as OFDM modulation, WDM modulation.After 5km is transmitted,
Significantly deteriorating does not occur in eye shape, show to will be seen that using the converter optical information be transformed into infrared light and grown away from
Scheme from transmission has feasibility.
Efficient passive visible light of the invention to the characteristics of infrared photoconverter be using printable perovskite photovoltaic
Detector receives visible light signal and energy simultaneously, and is converted to voltage signal and is input to silicon by printed circuit and gold thread bonding
Base photon chip, driving silicon substrate electricity tune micro-loop modulation are transmitted by infrared communication light therein by long-range single mode fiber
The infrared light modulated is not necessarily to additional functionality with the volume of coin-size, can be realized after incoming fiber optic from reception, be turned
Change to a whole set of function of remote transmission.Wherein, printable multilayer structure perovskite photovoltaic detector possesses very high light energy
Input visible light can be converted to suitable driving voltage and exported by transfer efficiency, lower cost of manufacture；Silicon-based micro ring electric light
The manufacture craft of modulator is compatible with CMOS technology, can work, input signal is modulated to red under lower driving voltage
On outer Communication ray, and it is output in single mode optical fiber by vertical coupled mode.Experiment of the overall plan in simulation true environment
In be verified.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all include
Within protection scope of the present invention.
Claims (8)
1. a kind of passive visible light is to the converter of infrared light, which is characterized in that the converter includes photovoltaic detector (1), electricity
Road plate (3) and silicon based photon chip (5), wherein
The photovoltaic detector (1) is for absorbing visible light energy and the signal of the visible light of absorption being converted to voltage letter simultaneously
Number output；The circuit board (3) transmits the voltage signal for connecting the photovoltaic detector and silicon based photon chip
To the silicon based photon chip (5)；
The silicon based photon chip (5) includes electrooptic modulator (6) and coupling grating (7), the coupling grating include outlet and
Entrance, the infrared light enter in the electrooptic modulator through the entrance, and the electrooptic modulator includes electrode (61), micro-loop
Waveguide (62) and coupled waveguide (63), the electrode (61) connect with the circuit board (3), come from the circuit board for receiving
Voltage signal and pass it in the PIN junction of the micro-loop waveguide, the coupled waveguide (63) is for will be from the entrance
The infrared optical transport of entrance is simultaneously coupled into the micro-loop waveguide, and micro-loop waveguide (62) PIN junction receives the voltage letter
In the waveguide injected carriers into the micro-loop waveguide after number the refractive index of the waveguide is changed, refractive index changes
The waveguide after change is modulated the infrared light so that the infrared light carry the visible light include intensity
Or the information of number, the infrared light of the carrying visible optical information is exported from (7) of the coupling grating to be exported, and is realized with this
Passive conversion of the visible light to infrared light.
2. converter of a kind of passive visible light to infrared light as described in claim 1, which is characterized in that the photovoltaic detection
Device (1) is described from bottom to up successively including substrate, conductive substrates, separation layer, Electron absorption layer, separate layer and hole absorption layer
Separation layer is used to for the conductive substrates and Electron absorption layer being isolated, the separate layer be used for by the Electron absorption layer with it is described
Hole absorption layer separates, and positive electrode and negative electrode, the hole absorption layer and the positive electrode are provided in the conductive substrates
Be connected, the Electron absorption layer is connected with the negative electrode, the Electron absorption layer, separate layer to filled out in hole absorption layer
Filled with the material for absorbing visible light, it is seen that light is irradiated from the lower section of the photovoltaic detector, passes through the substrate and conductive substrates
It is absorbed by the material for absorbing visible light and generates carrier, the Electron absorption layer absorbs the electron-transport in the carrier
To the negative electrode, the hole absorption layer absorbs the hole transport in the carrier to the positive electrode, with this described
Voltage signal is formed between negative electrode and positive electrode.
3. converter of a kind of passive visible light to infrared light as claimed in claim 2, which is characterized in that the absorption is visible
The material of light use perovskite, i.e., the described Electron absorption layer, separate layer to hole absorption layer in be filled with perovskite, accordingly
Ground, the photovoltaic detector use perovskite photovoltaic detector, and the material of the Electron absorption layer is silica, the separation
The material of layer uses zirconium dioxide, and the material of the hole absorption layer uses carbon.
4. converter of a kind of passive visible light to infrared light as claimed in claim 2 or claim 3, which is characterized in that the electronics
Absorbed layer, separate layer arrive and the surface area of hole absorption layer is using 1cm2~1.2cm2, so as to improve the defeated of the photovoltaic detector
Voltage out, while avoiding the excessive speed of response for reducing the photovoltaic detector of surface area.
5. converter of a kind of passive visible light to infrared light as described in claim 1, which is characterized in that the Electro-optical Modulation
The driving voltage of device (6) uses 0.9V~1.1V, so that the electrooptic modulator has truncation effect, removes the photovoltaic with this and visits
Survey the drop-out voltage hangover that device generates under visible optical drive.
6. converter of a kind of passive visible light to infrared light as described in claim 1, which is characterized in that the circuit board
(3) it is connected by bonding semiconductor metal wire (4) with the electrode (61).
7. converter of a kind of passive visible light to infrared light as claimed in claim 6, which is characterized in that the circuit board
(3) size of top electrode from close to the photovoltaic detector (1) one end arrive close to the electrooptic modulator one end using by
The small design of gradual change, the electrode size close to the electrooptic modulator (6) one end are suitable for the pad of the bond wire line.
8. converter of a kind of passive visible light to infrared light as described in claim 1, which is characterized in that the converter is made
For a unit, multiple converters are connected on an optical fiber by way of wavelength-division multiplex and form multiunit conversion
Device expands the process range of the visible frequency with this, or increases the monitoring number of nodes that single fiber is supported.
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| CN201811130400.9A CN109326734B (en) | 2018-09-27 | 2018-09-27 | A kind of converter of passive visible light to infrared light |
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| CN201811130400.9A CN109326734B (en) | 2018-09-27 | 2018-09-27 | A kind of converter of passive visible light to infrared light |
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| CN109326734B true CN109326734B (en) | 2019-10-08 |
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