CN109301053B - Quantum dot LED packaging structure and manufacturing method thereof - Google Patents
Quantum dot LED packaging structure and manufacturing method thereof Download PDFInfo
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- CN109301053B CN109301053B CN201811332768.3A CN201811332768A CN109301053B CN 109301053 B CN109301053 B CN 109301053B CN 201811332768 A CN201811332768 A CN 201811332768A CN 109301053 B CN109301053 B CN 109301053B
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 58
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000011521 glass Substances 0.000 claims abstract description 142
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 238000007789 sealing Methods 0.000 claims abstract description 18
- 239000003822 epoxy resin Substances 0.000 claims abstract description 13
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 13
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 9
- 239000011248 coating agent Substances 0.000 claims abstract description 7
- 238000000576 coating method Methods 0.000 claims abstract description 7
- 239000000741 silica gel Substances 0.000 claims description 19
- 229910002027 silica gel Inorganic materials 0.000 claims description 19
- 239000004593 Epoxy Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- 239000000843 powder Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 abstract description 6
- 239000001301 oxygen Substances 0.000 abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- 238000002360 preparation method Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000695 excitation spectrum Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a quantum dot LED packaging structure, which comprises a bracket and an LED chip, wherein a bowl cup is arranged on the surface of the bracket, an inward concave step is arranged at the top of the bowl cup, the LED chip is arranged in the middle of the bottom surface of the bowl cup, a quantum glass component is arranged in the inward concave step, two ends of the quantum glass component are packaged in the inward concave step through a silica gel-epoxy resin sealing layer, the quantum glass component comprises an upper glass layer and a lower glass layer, and a quantum dot layer is arranged between the upper glass layer and the lower glass layer; the preparation method comprises the following steps: step one, preparing a bracket with a concave step on a bowl cup, and packaging an LED chip in the bowl cup; packaging a lower glass layer of the quantum glass component arranged in the concave step through a silica gel-epoxy resin sealing end, coating a quantum dot layer on the surface of the lower glass layer, compacting through an upper glass layer, and packaging the upper glass layer; and thirdly, vacuumizing the cavity formed by the lower glass layer and the bowl cup, and then baking in vacuum, so that good tightness between the quantum dot layer and the inside of the chip is realized, and water and oxygen are blocked.
Description
Technical Field
The invention relates to the field of LED packaging, in particular to a quantum dot LED packaging structure and a manufacturing method thereof.
Background
With the improvement of national economic level, people are increasingly demanding high-quality life. The quantum dot material is used as a novel luminescent material for lighting or display equipment and the like, has wide excitation spectrum, good monochromaticity, adjustable luminescence peak wavelength and high conversion efficiency, can realize stable light color (accurate regulation and control of spectrum) and effective improvement of color gamut of backlight products, and is used for compensating or replacing the defects of rare earth doped fluorescent powder in energy level distribution and luminous efficiency, thereby having more economic advantages and application prospect.
However, the existing quantum dot material has poor water-oxygen stability, short service life and quick failure under conventional packaging, the conventional packaging mode cannot realize effective protection of the material, the existing quantum dot application is only stopped at a membrane stage, the material consumption is large, the device suitability is poor, the yield and the yield are low, and the conventional LED packaging method has the following defects:
(1) The water oxygen after the quantum dots and the chips are packaged has a larger influence on the material performance of the quantum dots, so that the light efficiency of the quantum dot packaging device is poor, and the light reflection and overlapping phenomena of the edges are serious when the LED chip light source projects light, so that the light projection generated by the LED chip is uneven;
(2) The existing quantum dot packaging structure is difficult to apply to high-power devices.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention provides a quantum dot LED packaging structure and a manufacturing method thereof, which can effectively solve the problems of the background art.
The technical scheme adopted for solving the technical problems is as follows:
The utility model provides a quantum dot LED packaging structure and manufacturing method thereof, includes support and LED chip, the surface of support is provided with the bowl cup, the top of bowl cup is provided with the indent step, the LED chip sets up in the middle of the bottom surface of bowl cup, be provided with the quantum glass subassembly in the indent step, the quantum glass subassembly both ends are through silica gel-epoxy sealing layer encapsulation in the indent step, the quantum glass subassembly includes glass layer and lower glass layer, be provided with the quantum dot layer between glass layer and the lower glass layer.
Further, a step edge is arranged at the joint of the concave step and the bowl cup, two ends of the lower glass layer of the quantum glass assembly are connected to the step edge, and a semicircular groove is formed in the surface of the last step platform of the step edge.
Further, the silicone-epoxy sealing layer comprises a separate silicone layer and epoxy layer.
Further, the thickness of the quantum dot layer is between 100 and 500 mu m, the quantum dot layer and the fluorescent powder can form a combined layer, the sizes of the upper glass layer and the lower glass layer are consistent, and the thickness of the upper glass layer and the lower glass layer is about 50 to 300 mu m.
Further, two ends of the upper glass layer and the lower glass layer form opposite V-shaped chamfers, and the tops of the V-shaped chamfers are arranged on extension lines of two ends of the longitudinal section of the bowl cup.
A manufacturing method of a quantum dot LED packaging structure is characterized by comprising the following steps: the method comprises the following steps:
Step one, preparing a bracket with a concave step on a bowl cup, and packaging an LED chip in the bowl cup;
packaging a lower glass layer of the quantum glass component arranged in the concave step through a silica gel-epoxy resin sealing end, coating a quantum dot layer on the surface of the lower glass layer, compacting through an upper glass layer, and packaging the upper glass layer;
And thirdly, vacuumizing the cavity formed by the lower glass layer and the bowl cup, and then baking in vacuum.
Further, in the first step, a bracket with a concave step is prepared on the bowl cup, the size of the concave step is the same as that of the quantum glass component, and when the size of the quantum glass component is the same as that of the upper surface area of the bracket, in the second step, the quantum dot layer between the upper glass layer and the lower glass layer and the quantum dot layer between the lower glass layer and the bracket are respectively and independently packaged.
Further, when the size of the sub-glass assembly is the same as the upper surface area of the support, both ends of the upper and lower glass layers are right angle corners.
Compared with the prior art, the invention has the beneficial effects that:
The structure reduces the dosage of quantum dot materials on the basis of guaranteeing the uniformity of light emission; meanwhile, the structure realizes water-oxygen sealing isolation, thereby reducing the failure of quantum dots and chips and improving the stability of devices; in addition, the structure improves the utilization rate of chip luminescence, improves the light efficiency, the power bearing capacity, the device adaptability and the service life, and has the advantages of simple process, less investment, low cost, high yield, resource conservation and environmental protection.
Drawings
FIG. 1 is a schematic diagram of the overall structure of the present invention;
FIG. 2 is a schematic diagram of a direct silica gel layer package quantum glass assembly according to the present invention;
FIG. 3 is a schematic diagram of a quantum glass assembly encapsulated by a silicone layer and an epoxy layer, respectively, according to the present invention;
FIG. 4 is a schematic diagram of a rectangular package structure of an end edge of the quantum glass module of the present invention;
fig. 5 is an enlarged schematic view of the stair edge according to the present invention.
Reference numerals in the drawings:
1-a bracket; a 2-LED chip; 3-bowl cup; 4-concave steps; a 5-quantum glass assembly; 6-a silicone-epoxy sealing layer; 7-step edges; 8-a semicircular groove;
501-upper glass layer; 502-lower glass layer; 503-a quantum dot layer;
601-a silica gel layer; 602-epoxy layer.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1:
As shown in fig. 1, the invention provides a quantum dot LED packaging structure, which comprises a bracket 1 and an LED chip 2, wherein a bowl cup 3 is arranged on the surface of the bracket 1, an inward concave step 4 is arranged at the top of the bowl cup 3, the LED chip 2 is arranged in the middle of the bottom surface of the bowl cup 3, a quantum glass component 5 is arranged in the inward concave step 4, two ends of the quantum glass component 5 are packaged in the inward concave step 4 through a silica gel-epoxy resin sealing layer 6, the quantum glass component 5 comprises an upper glass layer 501 and a lower glass layer 502, and a quantum dot layer 503 is arranged between the upper glass layer 501 and the lower glass layer 502.
Further describing, the junction of indent step 4 and bowl cup 3 is provided with ladder limit 7, and the both ends of lower glass layer 502 of quantum glass subassembly 5 are taken and are linked on ladder limit 7, and the last step platform surface of ladder limit 7 is provided with half slot 8.
The silicone-epoxy sealing layer 6 of the present invention includes a separate silicone layer 601 and epoxy layer 602.
The thickness of the quantum dot layer 503 is between 100 μm and 500 μm, and the quantum dot layer 6 may also form a combined layer with the phosphor, the sizes of the upper glass layer 501 and the lower glass layer 502 are consistent, and the thicknesses of the upper glass layer 501 and the lower glass layer 502 are about 50 μm to 300 μm.
Opposite V-shaped chamfers are formed at the two ends of the upper glass layer 501 and the lower glass layer 502, and the tops of the V-shaped chamfers are arranged on extension lines of the two ends of the longitudinal section of the bowl cup 3;
The invention provides three LED packaging structures:
a) As shown in fig. 2, the quantum glass component 5 is arranged in the concave step 4, and meanwhile, the areas of the quantum dot layer 503, the lower glass layer and the upper glass layer are the same, and the two ends of the quantum glass component 5 and the contact part between the lower glass layer 502 and the step edge 7 are directly packaged by a silica gel layer 601;
b) As shown in fig. 1 or fig. 3, the quantum glass assembly 5 is arranged in the concave step 4, meanwhile, the area of the quantum dot layer 503 is slightly smaller than that of the upper glass layer 501 and the lower glass layer 502, two ends of the quantum dot layer 503 are packaged together through the epoxy resin layer 602, the upper glass layer 501 and the lower glass layer 502, the contact surface of the lower glass layer 502 and the step edge 7 is packaged through the silica gel layer 601, and meanwhile, V-shaped chamfers are formed at the opposite ends of the glass layer 502 and the lower glass layer 501;
c) As shown in fig. 4, the lower surface of the quantum glass assembly 5 is the same as the upper surface of the bracket 1, that is, the lower glass layer 502 of the quantum glass assembly 5 is kept consistent with the two ends of the bracket 1, the two ends of the quantum dot layer 503 are packaged together through the epoxy resin layer 602, the upper glass layer and the lower glass layer, and the contact surface of the lower glass layer 502 and the step edge 7 is packaged through the silica gel layer 601.
In the LED packaging process under the structure b), the upper glass layer 501 and the lower glass layer 502 are chamfered, so that the projection light of the LED chip 2 can extend along the chamfering direction when entering the quantum glass component 5, thereby avoiding the generation of stray light at the corner, leading the light projection to be softer and the edge projection light of the LED to be more uniform;
Meanwhile, the step edge 7 is arranged at the joint of the concave step 4 and the bowl cup 3, when the silica gel layer 601 is coated, the silica gel overflows from the lower glass layer 502, under the action of gravity, the overflowed silica gel is in a natural flow state on the step edge 7, and enters the semicircular groove 8, and the semicircular groove 8 is arranged, so that the redundant silica gel layer 601 is uniformly coated on the surface of the step edge 7, and therefore diffuse reflection and refraction generated by the overflowed silica gel layer 601 are prevented.
Example 2:
a manufacturing method of a quantum dot LED packaging structure is characterized by comprising the following steps: the method comprises the following steps:
Step one, preparing a bracket with a concave step on a bowl cup, and packaging an LED chip in the bowl cup;
packaging a lower glass layer of the quantum glass component arranged in the concave step through a silica gel-epoxy resin sealing end, coating a quantum dot layer on the surface of the lower glass layer, compacting through an upper glass layer, and packaging the upper glass layer;
And thirdly, vacuumizing the cavity formed by the lower glass layer and the bowl cup, and then baking in vacuum.
In the first step, a bracket with an inward concave step is arranged on the bowl cup, the size of the inward concave step is the same as that of the quantum glass component, and when the size of the quantum glass component is the same as that of the upper surface area of the bracket, in the second step, the quantum dot layer between the upper glass layer and the lower glass layer and the quantum dot layer between the lower glass layer and the bracket are respectively and independently packaged.
When the equivalent sub-glass assembly is equal in size to the upper surface area of the support, the two ends of the upper glass layer and the lower glass layer are right-angle corners.
In the second step, the left and right ends of the bracket are coated with silica gel layers with good temperature resistance and sealing performance and good light transmission, then a lower glass layer with proper size is put on the concave step part of the bracket, a quantum dot layer with specific wavelength is uniformly coated on the lower glass layer, and the upper surface of the quantum dot is covered by another upper glass layer with the same specification, so that the quantum dot layer is well connected with the upper glass layer and the lower glass layer;
In the second step, coating epoxy resin or a silica gel layer with good temperature resistance and sealing performance and good light transmission performance on two ends of the support, putting a lower glass layer with proper size on the concave step part of the support, coating epoxy resin and QD (QD) or other transparent silica gel with high sealing performance and good temperature resistance and light transmission performance on the left and right ends of the lower glass layer, uniformly coating a quantum dot layer with specific wavelength on the lower glass layer, and covering the quantum dot layer with another upper glass layer with the same specification, so that the quantum dot layer is well connected with the upper glass layer and the lower glass layer;
In the second step, the left and right ends of the bracket are coated with epoxy resin or other transparent silica gel layers with high sealing performance, high temperature resistance and light transmission, then a lower glass layer with proper size is put on the bracket, silica gel with good temperature resistance, sealing performance and light transmission is coated at the two ends of the lower glass layer, then quantum dots with specific wavelength are uniformly coated on the lower glass layer, the upper surfaces of the quantum dots are covered by upper glass layers with the same specification, and the upper and lower glass layers are connected by the silica gel layers at the two ends.
Setting the temperature to be 80-200 ℃ according to the specific components of the adhesive material, baking for about 2-5 hours, and baking in a vacuum environment to solidify the silica gel, thus finally obtaining the quantum dot packaging device with better capability of isolating water and oxygen; the glass layer and the transparent silica gel of the device have good tightness, well block water oxygen and the like in the air, and perform good airtight packaging on the quantum dots and the chips inside, so that the reliability of the device is improved.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (4)
1. The utility model provides a quantum dot LED packaging structure, includes support (1) and LED chip (2), its characterized in that: the LED lamp is characterized in that a bowl cup (3) is arranged on the surface of the support (1), an inward concave step (4) is arranged at the top of the bowl cup (3), the LED chip (2) is arranged in the middle of the bottom surface of the bowl cup (3), a quantum glass component (5) is arranged in the inward concave step (4), two ends of the quantum glass component (5) are packaged in the inward concave step (4) through a silica gel-epoxy resin sealing layer (6), the quantum glass component (5) comprises an upper glass layer (501) and a lower glass layer (502), and a quantum dot layer (503) is arranged between the upper glass layer (501) and the lower glass layer (502);
a step edge (7) is arranged at the joint of the concave step (4) and the bowl cup (3), two ends of a lower glass layer (502) of the quantum glass assembly (5) are connected to the step edge (7) in a leaning way, and a semicircular groove (8) is formed in the surface of the last step platform of the step edge (7);
The silica gel-epoxy sealing layer (6) comprises a separate silica gel layer (601) and an epoxy resin layer (602);
Opposite V-shaped chamfers are formed at the two ends of the upper glass layer (501) and the lower glass layer (502), and the tops of the V-shaped chamfers are arranged on extension lines of the two ends of the longitudinal section of the bowl cup (3).
2. The quantum dot LED packaging structure of claim 1, wherein: the thickness of the quantum dot layer (503) is between 100 and 500 mu m, the quantum dot layer (503) can also form a combined layer with fluorescent powder, the sizes of the upper glass layer (501) and the lower glass layer (502) are consistent, and the thicknesses of the upper glass layer (501) and the lower glass layer (502) are about 50 to 300 mu m.
3. The method for manufacturing a quantum dot LED package structure according to claim 1, wherein: the method comprises the following steps:
Step one, preparing a bracket with a concave step on a bowl cup, and packaging an LED chip in the bowl cup;
packaging a lower glass layer of the quantum glass component arranged in the concave step through a silica gel-epoxy resin sealing end, coating a quantum dot layer on the surface of the lower glass layer, compacting through an upper glass layer, and packaging the upper glass layer;
And thirdly, vacuumizing the cavity formed by the lower glass layer and the bowl cup, and then baking in vacuum.
4. The method for manufacturing a quantum dot LED package structure according to claim 3, wherein: in the first step, a bracket with an inward concave step is arranged on the bowl cup, the size of the inward concave step is the same as that of the quantum glass component, and when the size of the quantum glass component is the same as that of the upper surface area of the bracket, in the second step, the quantum dot layer between the upper glass layer and the lower glass layer and the quantum dot layer between the lower glass layer and the bracket are respectively and independently packaged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201811332768.3A CN109301053B (en) | 2018-11-09 | 2018-11-09 | Quantum dot LED packaging structure and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811332768.3A CN109301053B (en) | 2018-11-09 | 2018-11-09 | Quantum dot LED packaging structure and manufacturing method thereof |
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| CN109301053A CN109301053A (en) | 2019-02-01 |
| CN109301053B true CN109301053B (en) | 2024-07-19 |
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| CN111987206A (en) * | 2019-05-23 | 2020-11-24 | 易美芯光（北京）科技有限公司 | Quantum dot LED packaging device and manufacturing method |
| CN112164743A (en) * | 2020-09-27 | 2021-01-01 | 深圳Tcl新技术有限公司 | Backlight module and display device |
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| KR101366193B1 (en) * | 2013-07-15 | 2014-02-21 | 테라셈 주식회사 | Sealing method of air cavity package using uv epoxy |
| CN107922276A (en) * | 2015-08-12 | 2018-04-17 | 康宁股份有限公司 | Sealing device and its manufacture method |
| JP2018125368A (en) * | 2017-01-31 | 2018-08-09 | スタンレー電気株式会社 | Ultraviolet emitting device and ultraviolet irradiating device |
| JP6415765B1 (en) * | 2017-11-06 | 2018-10-31 | ルーメンス カンパニー リミテッド | LED package |
| CN208873757U (en) * | 2018-11-09 | 2019-05-17 | 易美芯光（北京）科技有限公司 | A kind of quantum dot LED encapsulation structure |
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| US9831407B2 (en) * | 2013-11-21 | 2017-11-28 | Lumens Co., Ltd. | Light emitting device package, backlight unit, illumination apparatus, and method of manufacturing light emitting device package |
| KR20170003463U (en) * | 2016-03-30 | 2017-10-12 | 주식회사 앰트 | White light emitting diode lamp |
| CN105870302B (en) * | 2016-03-30 | 2019-01-29 | 深圳市聚飞光电股份有限公司 | A kind of packaging method of high colour gamut white light quanta point LED |
| CN106353923A (en) * | 2016-11-25 | 2017-01-25 | 江苏华功第三代半导体产业技术研究院有限公司 | Backlight source |
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Patent Citations (5)
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|---|---|---|---|---|
| KR101366193B1 (en) * | 2013-07-15 | 2014-02-21 | 테라셈 주식회사 | Sealing method of air cavity package using uv epoxy |
| CN107922276A (en) * | 2015-08-12 | 2018-04-17 | 康宁股份有限公司 | Sealing device and its manufacture method |
| JP2018125368A (en) * | 2017-01-31 | 2018-08-09 | スタンレー電気株式会社 | Ultraviolet emitting device and ultraviolet irradiating device |
| JP6415765B1 (en) * | 2017-11-06 | 2018-10-31 | ルーメンス カンパニー リミテッド | LED package |
| CN208873757U (en) * | 2018-11-09 | 2019-05-17 | 易美芯光（北京）科技有限公司 | A kind of quantum dot LED encapsulation structure |
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