CN109245498A - A kind of double-transistor flyback Topology Switch power circuit for realizing driving using transformer leakage inductance - Google Patents
A kind of double-transistor flyback Topology Switch power circuit for realizing driving using transformer leakage inductance Download PDFInfo
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- CN109245498A CN109245498A CN201811001022.4A CN201811001022A CN109245498A CN 109245498 A CN109245498 A CN 109245498A CN 201811001022 A CN201811001022 A CN 201811001022A CN 109245498 A CN109245498 A CN 109245498A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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Abstract
The invention proposes a kind of double-transistor flyback Topology Switch power circuit that driving is realized using transformer leakage inductance, including driving signal input, isolation drive chips, first capacitor, the second capacitor, first resistor, second resistance, 3rd resistor, the 4th resistance, first field-effect tube, the second field-effect tube, first diode, second diode, the first inductance, flyback transformer, third diode, the 5th resistance drive supply voltage input terminal and Switching Power Supply supply voltage input terminal.Circuit of the present invention is simple, good reliability, does not need driving transformer, and makes full use of the leakage inductance of flyback transformer, can effectively improve the power density of Switching Power Supply.
Description
Technical field
The present invention relates to a kind of Switching Power Supplies, and in particular to a kind of to realize that the double-transistor flyback of driving is opened up using transformer leakage inductance
Flutter switching power circuit.
Background technique
Switching Power Supply is a part indispensable in electronic equipment.With the development of power electronics technology, Switching Power Supply
Develop towards the direction of high frequency, high power density, high reliability.And voltage class needed for electronic product is typically different,
And between product again usually require electrical isolation, circuit of reversed excitation because its can simply by increase secondary windings come realize multichannel every
It is used widely in the power supply occasion of middle low power from output.But for single switch flyback converter, since transformer leaks
The presence of sense can generate very high voltage stress spike in switching tube shutdown on switching tube；Meanwhile primary side switch pipe closes
When disconnected, due to the effect of secondary side back-pressure, the voltage stress on primary side switch pipe is often more much higher than input voltage, defeated for high pressure
Enter occasion, the resistance to of switch tube is pressed with very high requirement.Based on this, double-transistor flyback topological circuit is applied.But due to double
Two switching tubes of pipe circuit of reversed excitation are synchronism switching on states, and existing technology completes driving using driving transformer, by
In the presence of capacitance, driving transformer pair side has negative pressure generation, and switching tube is easily damaged when serious.Meanwhile it is existing
Actuation techniques need to increase push-pull circuit toward contact to improve driving power.Therefore need to seek a kind of topology, in high pressure occasion,
Not only it can reduce the voltage of switching tube, but also can ensure that reliably working.
Summary of the invention
The present invention is directed to make up above-mentioned the deficiencies in the prior art, propose it is a kind of utilize transformer leakage inductance realize driving it is two-tube
Flyback topologies switching power circuit, the circuit have circuit structure simple, and good reliability is high-efficient, does not need additional recommend
Power amplification circuit and clamp circuit.
The purpose of the present invention is achieved through the following technical solutions:
A kind of double-transistor flyback Topology Switch power circuit for realizing driving using transformer leakage inductance, which is characterized in that including
Driving signal input, isolation drive chip U1, first capacitor C1, the second capacitor C2, first resistor R1, second resistance R2,
Three resistance R3, the 4th resistance R4, the first field-effect tube Q1, the second field-effect tube Q2, first diode D1, the second diode D2,
First series inductance L1, flyback transformer T1, third diode D3, the 5th resistance R5, driving supply voltage input terminal VDD, with
And Switching Power Supply supply voltage input terminal VIN；
The signal input part of the anode input isolation drive chip U1 of driving signal input, driving signal input are born
With connecting the input of driving chip U1, isolation drive chip U1 has two-way output for pole, and first via output OUTA meets first resistor R1
The gate leve of one end, another termination one end second resistance R2 first resistor R1 and the first field-effect tube Q1, the second resistance R2 other end
Connect the first field-effect tube Q1 source level, the second diode D2 cathode, first one end series inductance L1, the one end first capacitor C1 and every
Reference ground from driving chip U1 first via output OUTA, the first field-effect tube Q1 drain electrode connect first diode D1 cathode and open
Another termination third diode D3 cathode of work power source supplying voltage VIN, first capacitor C1 and the isolation drive chip first via are defeated
The power input VDDA of OUTA out, third diode D3 anode connect the 5th one end resistance R5, another termination driving of the 5th resistance R5
Input voltage VDD；
The second tunnel output OUTB of isolation drive chip U1 connects the one end 3rd resistor R3, another termination the 4th of 3rd resistor R3
The one end resistance R4 and the second field-effect tube Q2 gate leve, the second field-effect tube Q2 drain electrode connects first diode D1 anode and flyback becomes
Depressor T1 armature winding one end, the flyback transformer T1 armature winding first series inductance L1 other end of another termination, the 4th resistance
The R4 other end, the second field-effect tube Q2 source level and the second diode D2 anode connect the reference ground of supply voltage VIN, isolation drive
The power input VDDB of the second tunnel output OUTB of chip U1 meets driving supply voltage input terminal VDD and the second capacitor C2 mono-
End, reference of the second tunnel output OUTB of another termination isolation drive chip U1 of the second capacitor C2 and supply voltage VIN
With reference to ground.
Further, the flyback transformer T1 leakage inductance is the 2%-4% of its own magnetizing inductance.
Further, the primary of the flyback transformer T1 is a winding, and secondary is a no less than winding.
Further, the first diode D1, the second diode D2 are voltage stress and first field-effect
The fast recovery diode of pipe Q1, the second field-effect tube Q2 same levels.
Further, the third diode D3 is voltage stress and the first field-effect tube Q1, second effect
It should pipe Q2 same levels and the small silicon carbide fast recovery diode of conducting resistance.
The present invention have it is following the utility model has the advantages that
The double-transistor flyback Topology Switch power circuit that driving is realized using transformer leakage inductance of the invention, including two-way is provided
The driving chip of isolation drive signal, the driving signal of the first field-effect tube are by the 5th resistance, third diode and first
The Bootstrapping drive circuit of capacitor composition completes power supply.Different with the bootstrapping of conventional bridge circuit upper tube driving, the present invention boots electric
The charging for holding (first capacitor) is to utilize the leakage inductance and the first series inductance of flyback transformer, after the shutdown of primary side switch pipe,
When afterflow, so that the first field-effect tube source level is grounded, to complete bootstrapping driving.Leakage inductance energy finally feeds back to input source, improves
The whole efficiency of converter.Meanwhile this circuit structure is simple, at low cost, negative pressure is not present in driving signal, and switching tube is born
Voltage stress it is small, be effectively protected switching tube, improve the stability of converter.
Detailed description of the invention
Fig. 1 is circuit connection diagram of the invention；
When Fig. 2 is that the present invention works normally, the first field-effect tube Q1, the second field-effect tube Q2, first diode D1, second
D2, the primary of flyback transformer T1, secondary coil work wave.
Specific embodiment
The invention will be described in further detail with reference to the accompanying drawing；
As shown in Figure 1, the double-transistor flyback Topology Switch power circuit of the invention for realizing driving using transformer leakage inductance, packet
Include driving signal input, isolation drive chip U1, first capacitor C1, the second capacitor C2, first resistor R1, second resistance R2,
3rd resistor R3, the 4th resistance R4, the first field-effect tube Q1, the second field-effect tube Q2, first diode D1, the second diode
D2, the first series inductance L1, flyback transformer T1, third diode D3, the 5th resistance R5, driving supply voltage input terminal VDD,
And Switching Power Supply supply voltage input terminal VIN；
The signal input part of the anode input isolation drive chip U1 of driving signal input, driving signal input are born
With connecting the input of driving chip U1, isolation drive chip U1 has two-way output for pole, and first via output OUTA meets first resistor R1
The gate leve of one end, another termination one end second resistance R2 first resistor R1 and the first field-effect tube Q1, the second resistance R2 other end
Connect the first field-effect tube Q1 source level, the second diode D2 cathode, first one end series inductance L1, the one end first capacitor C1 and every
Reference ground from driving chip U1 first via output OUTA, the first field-effect tube Q1 drain electrode connect first diode D1 cathode and open
Another termination third diode D3 cathode of work power source supplying voltage VIN, first capacitor C1 and the isolation drive chip first via are defeated
The power input VDDA of OUTA out, third diode D3 anode connect the 5th one end resistance R5, another termination driving of the 5th resistance R5
Input voltage VDD；
The second tunnel output OUTB of isolation drive chip U1 connects the one end 3rd resistor R3, another termination the 4th of 3rd resistor R3
The one end resistance R4 and the second field-effect tube Q2 gate leve, the second field-effect tube Q2 drain electrode connects first diode D1 anode and flyback becomes
Depressor T1 armature winding one end, the flyback transformer T1 armature winding first series inductance L1 other end of another termination, the 4th resistance
The R4 other end, the second field-effect tube Q2 source level and the second diode D2 anode connect the reference ground of supply voltage VIN, isolation drive
The power input VDDB of the second tunnel output OUTB of chip U1 meets driving supply voltage input terminal VDD and the second capacitor C2 mono-
End, reference of the second tunnel output OUTB of another termination isolation drive chip U1 of the second capacitor C2 and supply voltage VIN
With reference to ground.
Preferably, the flyback transformer T1 leakage inductance is the 2%-4% of its own magnetizing inductance.
Preferably, the primary of the flyback transformer T1 is a winding, and secondary is a no less than winding.
Preferably, the first diode D1, the second diode D2 are voltage stress and first field-effect tube
The fast recovery diode of Q1, the second field-effect tube Q2 same levels.
Preferably, the third diode D3 is voltage stress and the first field-effect tube Q1, the second field-effect
Pipe Q2 same levels and the small silicon carbide fast recovery diode of conducting resistance.
Driving signal becomes mutually isolated two-way same-phase driving signal after isolation drive chip U1, and two-way drives
Dynamic signal enters in corresponding switching tube by same treatment.
As shown in Fig. 2, in one cycle, in d1The Ts period, upper and lower switching tube conducting, gate drive signals high level,
Flyback transformer energy storage, primary current persistently rise；Into d2Ts period, gate drive signals low level, upper and lower switching tube close
Disconnected, at this time due to the presence of transformer leakage inductance and the first series inductance, this portion of energy passes through first diode and second
Diode feeds back to input source, simultaneously as the presence of such a regeneration processes, the first driving capacitor of the first field-effect tube
In t this periodCCharging is completed by the 5th resistance and third diode；The magnetic energy of flyback transformer storage simultaneously is released to pair
Side, this process will continue entire d2Ts；After the magnetic energy release of flyback transformer storage, into d3It the Ts period, bears at this time
It carries energy to be provided by output capacitance, transformer primary voltage zero, the first field-effect tube and the second field-effect tube respectively undertake defeated
Enter the voltage stress of voltage half.
Claims (5)
1. a kind of double-transistor flyback Topology Switch power circuit for realizing driving using transformer leakage inductance, which is characterized in that including driving
Dynamic signal input part, isolation drive chip U1, first capacitor C1, the second capacitor C2, first resistor R1, second resistance R2, third
Resistance R3, the 4th resistance R4, the first field-effect tube Q1, the second field-effect tube Q2, first diode D1, the second diode D2,
One series inductance L1, flyback transformer T1, third diode D3, the 5th resistance R5, driving supply voltage input terminal VDD and
Switching Power Supply supply voltage input terminal VIN；
The signal input part of the anode input isolation drive chip U1 of driving signal input, the cathode of driving signal input connect
With connecing the input of driving chip U1, isolation drive chip U1 has two-way output, and first via output OUTA connects the one end first resistor R1,
The gate leve of another termination one end second resistance R2 first resistor R1 and the first field-effect tube Q1, another termination first of second resistance R2
Field-effect tube Q1 source level, the second diode D2 cathode, first one end series inductance L1, the one end first capacitor C1 and isolation drive
The chip U1 first via exports the reference ground of OUTA, and the first field-effect tube Q1 drain electrode connects first diode D1 cathode and the power supply that goes into operation
Another termination third diode D3 cathode of supply voltage VIN, first capacitor C1 and the isolation drive chip first via export OUTA
Power input VDDA, third diode D3 anode connects the 5th one end resistance R5, another termination driving input electricity of the 5th resistance R5
Press VDD；
The second tunnel output OUTB of isolation drive chip U1 connects the one end 3rd resistor R3,3rd resistor R3 the 4th resistance of another termination
The one end R4 and the second field-effect tube Q2 gate leve, the second field-effect tube Q2 drain electrode connect first diode D1 anode and flyback transformer
T1 armature winding one end, the flyback transformer T1 armature winding first series inductance L1 other end of another termination, the 4th resistance R4 are another
One end, the second field-effect tube Q2 source level and the second diode D2 anode connect the reference ground of supply voltage VIN, isolation drive chip
The power input VDDB of the second tunnel output OUTB of U1 connects driving supply voltage input terminal VDD and second one end capacitor C2, the
The reference ground of the second tunnel output OUTB of another termination isolation drive chip U1 of two capacitor C2 and the reference of supply voltage VIN
Ground.
2. the double-transistor flyback Topology Switch power circuit according to claim 1 that driving is realized using transformer leakage inductance,
It is characterized in that, the flyback transformer T1 leakage inductance is the 2%-4% of its own magnetizing inductance.
3. the double-transistor flyback Topology Switch power circuit according to claim 1 that driving is realized using transformer leakage inductance,
Feature further includes that the primary of the flyback transformer T1 is a winding, and secondary is a no less than winding.
4. the double-transistor flyback Topology Switch power circuit according to claim 1 that driving is realized using transformer leakage inductance,
It is characterized in that, the first diode D1, the second diode D2 are voltage stress and the first field-effect tube Q1, second
The fast recovery diode of field-effect tube Q2 same levels.
5. the double-transistor flyback Topology Switch power circuit according to claim 1 that driving is realized using transformer leakage inductance,
It is characterized in that, the third diode D3 is voltage stress and the first field-effect tube Q1, the second field-effect tube Q2 phase
Ad eundem and the small silicon carbide fast recovery diode of conducting resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811001022.4A CN109245498A (en) | 2018-08-30 | 2018-08-30 | A kind of double-transistor flyback Topology Switch power circuit for realizing driving using transformer leakage inductance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811001022.4A CN109245498A (en) | 2018-08-30 | 2018-08-30 | A kind of double-transistor flyback Topology Switch power circuit for realizing driving using transformer leakage inductance |
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| CN109245498A true CN109245498A (en) | 2019-01-18 |
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|---|---|---|---|
| CN201811001022.4A Pending CN109245498A (en) | 2018-08-30 | 2018-08-30 | A kind of double-transistor flyback Topology Switch power circuit for realizing driving using transformer leakage inductance |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110620493A (en) * | 2019-10-25 | 2019-12-27 | 南京埃斯顿自动化股份有限公司 | High-order energy-complementing type bootstrap circuit and control method thereof |
| CN112039346A (en) * | 2020-09-28 | 2020-12-04 | 鑫金微半导体(深圳)有限公司 | Novel method for improving output power and efficiency of flyback power supply |
| CN113364252A (en) * | 2021-07-05 | 2021-09-07 | 珠海格力电器股份有限公司 | Driving device of double-tube forward power supply and power supply |
| CN116404881A (en) * | 2023-04-10 | 2023-07-07 | 东南大学 | Transformer coupling power device driving circuit based on single power supply |
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| US20100123511A1 (en) * | 2008-11-17 | 2010-05-20 | Bernhard Strzalkowski | Circuit Arrangement for Actuating a Transistor |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110620493A (en) * | 2019-10-25 | 2019-12-27 | 南京埃斯顿自动化股份有限公司 | High-order energy-complementing type bootstrap circuit and control method thereof |
| CN112039346A (en) * | 2020-09-28 | 2020-12-04 | 鑫金微半导体(深圳)有限公司 | Novel method for improving output power and efficiency of flyback power supply |
| CN113364252A (en) * | 2021-07-05 | 2021-09-07 | 珠海格力电器股份有限公司 | Driving device of double-tube forward power supply and power supply |
| CN113364252B (en) * | 2021-07-05 | 2022-08-05 | 珠海格力电器股份有限公司 | Driving device of double-tube forward power supply and power supply |
| CN116404881A (en) * | 2023-04-10 | 2023-07-07 | 东南大学 | Transformer coupling power device driving circuit based on single power supply |
| CN116404881B (en) * | 2023-04-10 | 2024-05-07 | 东南大学 | Transformer coupling power device driving circuit based on single power supply |
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Application publication date: 20190118 |