CN109212846A - Display device - Google Patents
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- CN109212846A CN109212846A CN201811269368.2A CN201811269368A CN109212846A CN 109212846 A CN109212846 A CN 109212846A CN 201811269368 A CN201811269368 A CN 201811269368A CN 109212846 A CN109212846 A CN 109212846A
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- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 129
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 239000010409 thin film Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000000465 moulding Methods 0.000 claims 2
- 230000003071 parasitic effect Effects 0.000 abstract description 14
- 238000000034 method Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136222—Colour filters incorporated in the active matrix substrate
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Geometry (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
The present invention relates to a display device including: the upper substrate comprises a first carrier plate and a common electrode layer formed on the first carrier plate; the lower substrate comprises a second carrier plate and a control layer formed on the second carrier plate and arranged opposite to the common electrode layer, the control layer comprises a pixel control area located in the middle and a drive control area located at the edge, and the drive control area is connected with the pixel control area to provide scanning signals for the pixel control area; the liquid crystal layer is clamped between the upper substrate and the lower substrate; the drive control region includes: the active array switch is formed on the second carrier plate; the first photoresist layer is formed on the active array switch and comprises photoresist material, and the dielectric constant of the photoresist material is smaller than that of the liquid crystal. The first light resistance layer is arranged to reduce the parasitic capacitance between the active array switch and the common electrode.
Description
Technical field
The present invention relates to display field more particularly to a kind of display devices.
Background technique
Liquid crystal display device includes upper substrate, lower substrate and is folded in intermediate liquid crystal layer, and incident light is injected from lower substrate,
It projects after the deflection of liquid crystal layer from upper substrate, by the on-off of the pixel thin film transistor on control lower substrate, can control
The steering of liquid crystal molecule in corresponding region after optical filter, shows frame out to control the luminous intensity in the region.
Display device first passes through drive control circuit progress signal processing generation scanning signal after receiving external electric signal, is swept by control
Retouch the on-off of the access control pixel thin film transistor of signal.Currently, narrow frame design is realized to save display device volume,
The drive control circuit for generating scanning signal is formed directly on lower substrate, that is, forms GOA (gate on array, array base
The driving of plate row) circuit.GOA circuit includes a large amount of active array switch, and active array switch includes thin film transistor (TFT) array,
The public electrode of metal electrode and upper substrate in active array switch will form parasitic capacitance, and the presence of parasitic capacitance will cause
The decaying of electric signal, so that signal delay, final display image quality.
Summary of the invention
Based on this, it is necessary to for the active array switch on lower substrate in display device and the public electrode on upper substrate
Between the parasitic capacitance that is formed it is larger and the problem of cause signal to decay, propose a kind of new display device.
A kind of display device, comprising:
Upper substrate, including the first support plate and the common electrode layer being formed on first support plate；
Lower substrate, including the second support plate and the control layer being formed on second support plate, the control layer and the public affairs
Common electrode layer is oppositely arranged, and the control layer includes centrally located pixel control region and the driving positioned at marginal position
Control area, the drive control region are connected to provide scanning letter for the pixel control region with the pixel control region
Number；
Liquid crystal layer is located between the upper substrate and the lower substrate；
The drive control region includes:
Active array switch, is formed on second support plate；
First photoresist layer is formed on the active array switch, and first photoresist layer includes photoresist, the light
The dielectric constant for hindering material is less than the dielectric constant of liquid crystal.
Above-mentioned display device includes pixel control region and drive control region on lower substrate, and drive control region includes
Drive control circuit, for receiving external electric signal and generating corresponding scanning signal, pixel control region is controlled comprising pixel
Circuit, drive control circuit is connected with pixel control circuit inputs pixel control circuit, control pair with the scanning signal that will be generated
Answer the deflection of the liquid crystal molecule of pixel region.In this application, by the way that drive control circuit to be formed directly on lower substrate, phase
Than being electrically connected in the chip that will include drive control circuit with lower substrate, the volume of display device can be greatly reduced, favorably
In the narrow frame design of display device.Meanwhile drive control region includes active array switch and the first photoresist layer, active array
Switch connects and composes drive control circuit, and the first photoresist layer is formed on active array switch, and the first photoresist layer includes photoresist material
Material, the dielectric constant of photoresist are less than the dielectric constant of liquid crystal.Since in the device structure, the metal of active array switch is electric
Public electrode on pole and upper substrate will form biggish parasitic capacitance, in this application, by switching upper shape in active array
At the first photoresist layer, since the dielectric constant that the dielectric constant of photoresist is less than liquid crystal can effectively be dropped by the way that the first photoresist layer is arranged
Parasitic capacitance between low active array switch and public electrode, reduces signal decaying, provides the display effect of display device.
The active array switch includes: in one of the embodiments,
The first metal layer is formed on second support plate, and the first metal layer forms the active array switch
Grid；
First insulating layer is formed on the first metal layer；
Semiconductor layer is formed on first insulating layer, and the semiconductor layer forms the source of the active array switch
Area and drain region；
Second metal layer is formed on the semiconductor layer, and the second metal layer includes the source being connected with the source region
Pole and the drain electrode being connected with the drain region；
Second insulating layer is formed in the second metal layer.
First photoresist layer is formed in the second insulating layer in one of the embodiments,.
First photoresist layer includes black photoresist, red photoresist, blue light resistance or green in one of the embodiments,
Coloured light resistance in any one.
First photoresist layer includes the bottom light being formed on the active array switch in one of the embodiments,
The black photoresist for hindering and being formed on the bottom photoresist, the bottom photoresist include red photoresist, blue light resistance or green
Any one in photoresist.
First photoresist layer includes flat structures and is formed on the flat structures in one of the embodiments,
Bulge-structure, the bulge-structure are abutted with the public electrode.
The thickness range of the flat structures is 0.2 μm~0.4 μm in one of the embodiments,.
The pixel control region includes: in one of the embodiments,
Pixel thin film transistor is formed on second support plate；
Second photoresist layer is formed on the pixel thin film transistor, second photoresist layer and first photoresist layer
It is integrally formed.
The drive control region is located at the two sides of the pixel control region in one of the embodiments,.
A kind of display device, comprising:
Upper substrate, including the first support plate and the common electrode layer being formed on first support plate；
Lower substrate, including the second support plate and the control layer being formed on second support plate, the control layer and the public affairs
Common electrode layer is oppositely arranged, and the control layer includes centrally located pixel control region and the driving positioned at marginal position
Control area, the drive control region are connected to provide scanning letter for the pixel control region with the pixel control region
Number；
Liquid crystal layer is located between the upper substrate and the lower substrate；
The drive control region includes:
Active array switch, is formed on second support plate；
First photoresist layer is formed on the active array switch, and first photoresist layer includes photoresist, the light
The dielectric constant for hindering material is less than the dielectric constant of liquid crystal, and first photoresist layer includes flat structures and is formed in described flat
Bulge-structure in structure, the bulge-structure are abutted with the public electrode；
The pixel control region includes:
Pixel thin film transistor is formed on second support plate；
Second photoresist layer is formed on the pixel thin film transistor, second photoresist layer and first photoresist layer
It is integrally formed.
Above-mentioned display device, drive control region include the first photoresist layer, are formed on the first photoresist layer upper to being set to
The bulge-structure of substrate can both support upper substrate by the way that the first photoresist layer is arranged, can also reduce active array switch with it is upper
Parasitic capacitance between substrate public electrode reduces signal decaying.
Detailed description of the invention
Fig. 1 is display device structure schematic diagram in an embodiment；
Fig. 2 is lower substrate top view in an embodiment；
Fig. 3 is display device partial sectional view in an embodiment；
Fig. 4 is lower substrate partial sectional view in an embodiment.
Specific embodiment
To facilitate the understanding of the present invention, a more comprehensive description of the invention is given in the following sections with reference to the relevant attached drawings.In attached drawing
Give preferred embodiment of the invention.But the invention can be realized in many different forms, however it is not limited to this paper institute
The embodiment of description.On the contrary, purpose of providing these embodiments is make it is more thorough and comprehensive to the disclosure.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention
The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term " and or " used herein includes one or more phases
Any and all combinations of the listed item of pass.
In the description of the present invention, it is to be understood that, term " on ", "lower", "vertical", "horizontal", "inner", "outside" etc.
The orientation or positional relationship of instruction is method based on the figure or positional relationship, is merely for convenience of the description present invention and letter
Change description, rather than the device or element of indication or suggestion meaning must have a particular orientation, with specific orientation construct and
Operation, therefore be not considered as limiting the invention.
As shown in Figure 1, display device includes upper substrate 100, lower substrate 200 and is located between upper substrate and lower substrate
Liquid crystal layer 300, wherein it support plate 110 and the common electrode layer 120 that is formed on the first support plate that upper substrate, which includes first, lower substrate
The control layer 220 support plate 210 and be formed on the second support plate including second, control layer 220 is opposite with common electrode layer 120 to be set
It sets, liquid crystal layer 300 is specifically to be folded between control layer 220 and common electrode layer 120, and control layer 220 includes being located at interposition
The pixel control region A set and the drive control region B positioned at marginal position, drive control region B and pixel control region A phase
Even to provide scanning signal for pixel control region, drive control region B specifically includes the active battle array being formed on the second support plate
Column switch B10 and the first photoresist layer B20, the first photoresist layer B20 being formed on active array switch B10 includes photoresist,
The dielectric constant of photoresist is less than the dielectric constant of liquid crystal.
Above-mentioned display device, including drive control region and pixel control region, wherein drive control region includes driving
Control circuit, for carrying out signal processing generation scanning signal after receiving external electric signal, drive control region and pixel are controlled
Region is connected so that scanning signal is inputted pixel control region, and pixel control region includes pixel control circuit, pixel control electricity
Road receives the deflection that the liquid crystal molecule of pixel region is controlled after scanning signal, finally shows different pictures.Drive control area
Active array switch in domain constitutes drive control circuit, and active array switch is formed directly on the second support plate, can be subtracted
The volume of small display device, is conducive to narrow frame design.Due to including metal electrode layer, metal electrode in active array switch
Layer will form parasitic capacitance with the common electrode layer in upper substrate.In this application, by forming one on active array switchs
Layer photoresist layer is only existed since the dielectric constant of photoresist layer is less than liquid crystal compared between active array switch and public electrode
Liquid crystal, one layer of photoresist layer of setting replaces partial liquid crystal between active array switch and public electrode, can effectively reduce active battle array
Parasitic capacitance between column switch and public electrode, so that attenuated signal is decayed.
In one embodiment, as shown in Fig. 2, drive control region B can be respectively arranged on the two sides of pixel control region A.When
When drive control region internal circuit element is more, concentrated setting will lead to cabling complexity in side, by drive control region point
At two parts, the two sides of pixel control region are separately positioned on, can simplify circuit trace, keeps display device frame more right
Claim.In one embodiment, the first support plate and the second support plate have transparent or translucent material composition, concretely glass support plate.
In one embodiment, as shown in figure 3, active array switch B10 be driving thin film transistor (TFT) array, specifically include according to
Secondary folded the first metal layer B11, the first insulating layer B12, semiconductor layer B13, second metal layer B14 and the second insulating layer B15 set.
Wherein, the first metal layer B11 is formed on the second support plate 210, and the first metal layer B11 forms the grid of active array switch.
First insulating layer B12 is covered on the first metal layer B11, for the grid of each active array switch to be isolated.Semiconductor layer B13 shape
At on the first insulating layer B12, be formed in semiconductor layer active array switch active area, the active area include source region and
Drain region.Second metal layer B14 is formed on semiconductor layer B13, specifically includes source electrode and drain electrode, wherein and source electrode is connected with source region,
Drain electrode is connected with drain region.Second insulating layer B15 is covered on second metal layer B14, and each source electrode and drain electrode second is insulated by this
Layer is isolated.Active array switch is formed by multilayered structure, active array switch includes grid, source electrode and drain electrode, more
A active array switch is connected and can form drive control circuit, and drive control circuit is integrated on lower substrate, can reduce
The volume of display device, is conducive to narrow frame design.In one example, the first photoresist layer B20 is formed in second insulating layer B15
On, i.e. it is successively folded between second metal layer B14 and public electrode 120 and is equipped with second insulating layer B15, the first photoresist layer B20 and liquid
Crystal layer, since the dielectric constant of photoresist is less than liquid crystal, in the premise for not changing the spacing between second metal layer and public electrode
Under, by the way that the first photoresist layer is arranged, it can effectively reduce the parasitic capacitance between second metal layer and public electrode.In other implementations
In example, active array switch also may include other structures, and the first photoresist layer need to only be located at second metal layer towards public electrode
Side, such as the first photoresist layer may be alternatively located between second metal layer and second insulating layer.
In one embodiment, the first photoresist layer is located at entire drive control region, i.e. the first photoresist layer covers all actives
Array switch.In a display device, only pixel control region needs transmitted light to form display picture, in drive control region
It will not show picture, there is no need to transmitted lights, therefore the first photoresist layer is directly covered in all actives without being patterned
On array switch, simple process and can largely reduce active array switch public electrode between parasitic capacitance.
In one embodiment, as shown in figure 3, the first photoresist layer B20 includes flat structures B21 and is formed on flat structures
Bulge-structure B22, the top of bulge-structure B22 is connected to the public electrode 120 of upper substrate, i.e. the bulge-structure is formed
BPS (Black Photo Spacer, black light obstruct underbed), supports upper substrate, provides liquid crystal for display device and fill space.
In one embodiment, the thickness range of the flat structures of the first photoresist layer is 0.2 μm~0.4 μm, in the range, can effectively be subtracted
Parasitic capacitance between few second metal layer and public electrode.
In one embodiment, the first photoresist layer may include in black photoresist, red photoresist, blue light resistance or green photoresist
Any one.Black photoresist, red photoresist, blue light resistance and green photoresist dielectric constant be respectively less than liquid crystal, selection is wherein
One is used as photoresist layer, can reduce dead resistance.In one embodiment, the material of black photoresist includes metal, it may include molybdenum,
At least one of chromium, aluminium, titanium or copper may also comprise in the corresponding metal oxide of molybdenum, chromium, aluminium, titanium, copper and metal nitride
At least one, the dielectric constant of metal material is smaller, since the dielectric constant of metal is smaller, using metal material as black
Photoresist can effectively reduce parasitic capacitance.
In one embodiment, as shown in figure 4, pixel control region A includes the pixel thin film being formed on the second support plate 210
Transistor A10 and the second photoresist layer being formed on pixel thin film transistor, the second photoresist layer and the first photoresist layer are integrally formed.
In the present embodiment, pixel control region and drive control region include thin film transistor (TFT), and on thin film transistor (TFT)
It is formed with light resistance structure, the second photoresist layer that can be pixel control region formation extends to drive control region and forms the first light
Resistance layer.In concrete technology processing procedure, after forming active array switch and pixel thin film transistor on the second support plate, then in film
Photoresist layer is formed on transistor, which includes the first photoresist layer and the second photoresist layer, is covered on active array switch
For the first photoresist layer, being covered on pixel thin film transistor is the second photoresist layer, forms the first photoresist layer by being integrally formed
With the second photoresist layer, processing step can simplify, keep display device structure more compact, be conducive to slimming design.It is real one
It applies in example, the second photoresist layer may include red light stop block A21, green light stop block A22 and blue light stop block A32, red light stop block
A21, green light stop block A22 and blue light stop block A23, which are constituted, filters colored photosphere, i.e., colored filter is integrated in lower substrate,
Form COA (Color Filter On Array, array substrate upper filter) substrate, any one light in the second photoresist layer
Resistance extends to drive control region fastly and forms the first photoresist layer, and the red light stop block A21 that can be in the second photoresist layer is extended to
Drive control region B forms the first photoresist layer, i.e. it is red light that the first photoresist layer B20 and red light stop block A21, which are integrally formed,
Resistance, is also possible to the green light stop block A22 in the second photoresist layer and extends to drive control region B to form the first photoresist layer, i.e., the
One photoresist layer B20 and green light stop block A22 is integrally formed, and for green photoresist, can also be the blue light resistance in the second photoresist layer
Block A23 extend to drive control region B formed the first photoresist layer, i.e. the first photoresist layer B20 and blue light stop block A23 one at
Type is blue light resistance.In one embodiment, the second photoresist layer includes black light stop block A24, and black light stop block A24 can also be carried out
BPS design, black light stop block A24 have shading performance, can also support upper substrate, black photoresist A24 and the first photoresist layer
B20 is integrally formed, and the black light stop block A24 that specifically can be pixel control region A extends to drive control region B and forms first
Photoresist layer, i.e. the first photoresist layer B20 and black light stop block A24 are integrally formed, and are black photoresist.
The application further relates to a kind of display device, including upper substrate 100, lower substrate 200 and is located in upper substrate and lower base
Liquid crystal layer 300 between plate, wherein it support plate 110 and the common electrode layer that is formed on the first support plate that upper substrate, which includes first,
120, it support plate 210 and the control layer 220 that is formed on the second support plate that lower substrate, which includes second, control layer 220 and common electrode layer
120 are oppositely arranged, and liquid crystal layer 300 is specifically to be folded between control layer 220 and common electrode layer 120, and control layer 220 includes position
Pixel control region A in intermediate region and the drive control region B positioned at marginal position, drive control region B and pixel control
Region A processed is connected to provide scanning signal for pixel control region, and drive control region, which specifically includes, to be formed on the second support plate
Active array switch B20 and the first photoresist layer B10 for being formed on active array switch B20, the first photoresist layer include photoresist
Material, the dielectric constant of photoresist are less than the dielectric constant of liquid crystal, and the first photoresist layer B10 includes flat structures B11 and formation
The public electrode 120 of upper substrate, pixel control are connected in the top of the bulge-structure B12 on flat structures, bulge-structure B12
Region A processed includes the pixel thin film transistor being formed on the second support plate and the second photoresist for being formed on pixel thin film transistor
Layer, the second photoresist layer and the first photoresist layer are integrally formed.
Above-mentioned display device, the first photoresist layer are covered on active array switch, can reduce active array switch and upper base
Parasitic capacitance between plate public electrode.First photoresist layer is formed with support construction, can support upper substrate, mention for display device
Space is filled for liquid crystal.Meanwhile first photoresist layer and the second photoresist layer be integrally formed, simplify manufacturing process, display device structure
It is more compact, be conducive to the slimming design of display device.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. a kind of display device, comprising:
Upper substrate, including the first support plate and the common electrode layer being formed on first support plate；
Lower substrate, including the second support plate and the control layer being formed on second support plate, the control layer and the common electrical
Pole layer is oppositely arranged, and the control layer includes centrally located pixel control region and the drive control positioned at marginal position
Region, the drive control region are connected to provide scanning signal for the pixel control region with the pixel control region；
Liquid crystal layer is located between the upper substrate and the lower substrate；
It is characterized in that, the drive control region includes:
Active array switch, is formed on second support plate；
First photoresist layer is formed on the active array switch, and first photoresist layer includes photoresist, the photoresist material
The dielectric constant of material is less than the dielectric constant of liquid crystal.
2. display device as described in claim 1, which is characterized in that the active array, which switchs, includes:
The first metal layer is formed on second support plate, and the first metal layer forms the grid of the active array switch；
First insulating layer is formed on the first metal layer；
Semiconductor layer is formed on first insulating layer, the semiconductor layer formed active array switch source region and
Drain region；
Second metal layer is formed on the semiconductor layer, the second metal layer include the source electrode that is connected with the source region with
And the drain electrode being connected with the drain region；
Second insulating layer is formed in the second metal layer.
3. display device as claimed in claim 2, which is characterized in that first photoresist layer is formed in the second insulating layer
On.
4. display device as described in claim 1, which is characterized in that first photoresist layer includes black photoresist, red light
Any one in resistance, blue light resistance or green photoresist.
5. display device as described in claim 1, which is characterized in that first photoresist layer is located at entire drive control area
Domain.
6. display device as described in claim 1, which is characterized in that first photoresist layer includes flat structures and is formed in
Bulge-structure on the flat structures, the bulge-structure are abutted with the public electrode.
7. display device as claimed in claim 6, which is characterized in that the thickness range of the flat structures is 0.2 μm~0.4
μm。
8. display device as described in claim 1, which is characterized in that the pixel control region includes:
Pixel thin film transistor is formed on second support plate；
Second photoresist layer is formed on the pixel thin film transistor, second photoresist layer and first photoresist layer one
Molding.
9. display device as described in claim 1, which is characterized in that the drive control region is located at the pixel control
The two sides in region processed.
10. a kind of display device, comprising:
Upper substrate, including the first support plate and the common electrode layer being formed on first support plate；
Lower substrate, including the second support plate and the control layer being formed on second support plate, the control layer and the common electrical
Pole layer is oppositely arranged, and the control layer includes centrally located pixel control region and the drive control positioned at marginal position
Region, the drive control region are connected to provide scanning signal for the pixel control region with the pixel control region；
Liquid crystal layer is located between the upper substrate and the lower substrate；
It is characterized in that, the drive control region includes:
Active array switch, is formed on second support plate；
First photoresist layer is formed on the active array switch, and first photoresist layer includes photoresist, the photoresist material
The dielectric constant of material is less than the dielectric constant of liquid crystal, and first photoresist layer includes flat structures and is formed in the flat structures
On bulge-structure, the bulge-structure abuts with the public electrode；
The pixel control region includes:
Pixel thin film transistor is formed on second support plate；
Second photoresist layer is formed on the pixel thin film transistor, second photoresist layer and first photoresist layer one
Molding.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811269368.2A CN109212846A (en) | 2018-10-29 | 2018-10-29 | Display device |
| PCT/CN2018/119575 WO2020087662A1 (en) | 2018-10-29 | 2018-12-06 | Display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811269368.2A CN109212846A (en) | 2018-10-29 | 2018-10-29 | Display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109212846A true CN109212846A (en) | 2019-01-15 |
Family
ID=64997289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811269368.2A Pending CN109212846A (en) | 2018-10-29 | 2018-10-29 | Display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109212846A (en) |
Citations (6)
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|---|---|---|---|---|
| CN1517751A (en) * | 2003-01-08 | 2004-08-04 | ���ǵ�����ʽ���� | Upper substrate and liquid crystal display device with the substrate |
| KR20040104986A (en) * | 2003-06-03 | 2004-12-14 | 삼성전자주식회사 | Thin film transistor-liquid crystal display device |
| CN1729422A (en) * | 2003-01-30 | 2006-02-01 | 三星电子株式会社 | Liquid crystal indicator |
| JP2009069776A (en) * | 2007-09-18 | 2009-04-02 | Mitsubishi Electric Corp | Image display device |
| US20160026049A1 (en) * | 2014-07-28 | 2016-01-28 | Samsung Display Co., Ltd. | Thin-film transistor substrate and display panel having the same |
| CN107797346A (en) * | 2017-12-07 | 2018-03-13 | 深圳市华星光电技术有限公司 | Liquid crystal display panel, liquid crystal display panel preparation method and display device |
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2018
- 2018-10-29 CN CN201811269368.2A patent/CN109212846A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1517751A (en) * | 2003-01-08 | 2004-08-04 | ���ǵ�����ʽ���� | Upper substrate and liquid crystal display device with the substrate |
| CN1729422A (en) * | 2003-01-30 | 2006-02-01 | 三星电子株式会社 | Liquid crystal indicator |
| KR20040104986A (en) * | 2003-06-03 | 2004-12-14 | 삼성전자주식회사 | Thin film transistor-liquid crystal display device |
| JP2009069776A (en) * | 2007-09-18 | 2009-04-02 | Mitsubishi Electric Corp | Image display device |
| US20160026049A1 (en) * | 2014-07-28 | 2016-01-28 | Samsung Display Co., Ltd. | Thin-film transistor substrate and display panel having the same |
| CN107797346A (en) * | 2017-12-07 | 2018-03-13 | 深圳市华星光电技术有限公司 | Liquid crystal display panel, liquid crystal display panel preparation method and display device |
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Application publication date: 20190115 |