CN109216512B - QLED device, preparation method thereof and high-voltage processing device - Google Patents
QLED device, preparation method thereof and high-voltage processing device Download PDFInfo
- Publication number
- CN109216512B CN109216512B CN201710542314.8A CN201710542314A CN109216512B CN 109216512 B CN109216512 B CN 109216512B CN 201710542314 A CN201710542314 A CN 201710542314A CN 109216512 B CN109216512 B CN 109216512B
- Authority
- CN
- China
- Prior art keywords
- pressure
- transmission layer
- closed container
- layer
- qled device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 238000012545 processing Methods 0.000 title description 3
- 230000005540 biological transmission Effects 0.000 claims abstract description 49
- 238000009931 pascalization Methods 0.000 claims abstract description 17
- 239000011261 inert gas Substances 0.000 claims description 24
- 238000000137 annealing Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 18
- 239000007789 gas Substances 0.000 claims description 16
- 230000005525 hole transport Effects 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 abstract description 95
- 239000002096 quantum dot Substances 0.000 abstract description 26
- 239000000463 material Substances 0.000 abstract description 15
- 238000002347 injection Methods 0.000 abstract description 9
- 239000007924 injection Substances 0.000 abstract description 9
- 230000007547 defect Effects 0.000 abstract description 6
- 239000000969 carrier Substances 0.000 abstract description 5
- 239000002131 composite material Substances 0.000 abstract description 4
- 238000004020 luminiscence type Methods 0.000 abstract description 4
- 239000002346 layers by function Substances 0.000 abstract description 3
- 230000006798 recombination Effects 0.000 abstract description 3
- 238000005215 recombination Methods 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 description 17
- 239000000758 substrate Substances 0.000 description 13
- 230000008021 deposition Effects 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 239000010445 mica Substances 0.000 description 5
- 229910052618 mica group Inorganic materials 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000004506 ultrasonic cleaning Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 238000000053 physical method Methods 0.000 description 2
- OVARTBFNCCXQKS-UHFFFAOYSA-N propan-2-one;hydrate Chemical compound O.CC(C)=O OVARTBFNCCXQKS-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- 208000033999 Device damage Diseases 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 1
- XXZXGDFLKRDJFP-UHFFFAOYSA-N copper;cyano thiocyanate Chemical compound [Cu].N#CSC#N XXZXGDFLKRDJFP-UHFFFAOYSA-N 0.000 description 1
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H01L33/06—
-
- H01L33/005—
-
- H01L33/14—
-
- H01L2933/0008—
-
- H01L2933/0033—
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a QLED device, a preparation method thereof and a high-pressure processing device, wherein the preparation method comprises the step of performing high-pressure processing on a functional transmission layer in an inert environment after the functional transmission layer is deposited on the device. According to the invention, the functional transmission layer is subjected to high-pressure treatment, so that the functional layer materials in the QLED device are combined more compactly, the functional transmission layer and the quantum dot light-emitting layer are combined more closely, the defects between interfaces are reduced, the non-radiative recombination is reduced, and the injection efficiency of carriers and the efficiency of composite luminescence are further improved.
Description
Technical Field
The invention relates to the technical field of quantum dots, in particular to a QLED device, a preparation method thereof and a high-pressure processing device.
Background
The semiconductor Quantum Dots (QDs) have the characteristics of high fluorescence Quantum efficiency, adjustable visible light band luminescence, wide color gamut coverage and the like. The light emitting diode using Quantum dots as a light emitting material is called a Quantum dot light-emitting diode (QLED), has the advantages of color saturation, higher energy efficiency, better color temperature, long service life and the like, and is expected to become a mainstream technology of next-generation solid state lighting and flat panel display.
In order to improve the efficiency and performance of the QLED device, most researchers mainly study the material of the quantum dot light emitting layer, only a few researchers study the functional transmission layer of the QLED device, and the study of the functional transmission layer in the prior art is limited to only modify the material of the functional transmission layer of the QLED device by a chemical method to improve the efficiency of the device.
However, in the device manufacturing process, researches on modifying the functional transmission layer of the QLED device by a physical method to improve the device film quality and the carrier transmission efficiency have been reported.
Accordingly, the prior art is yet to be improved and developed.
Disclosure of Invention
In view of the defects of the prior art, the invention aims to provide a QLED device, a manufacturing method thereof and a high-pressure processing device, which aim to improve the film quality and the carrier transmission efficiency of the QLED device by a physical method through physically modifying a function transmission layer in the device manufacturing process.
The technical scheme of the invention is as follows:
a preparation method of a QLED device comprises the step of carrying out high-pressure treatment on a functional transmission layer under an inert environment after the functional transmission layer is deposited on the device.
Further, in the preparation method of the QLED device, the functional transport layer is a hole transport layer and/or an electron transport layer.
Further, the preparation method of the QLED device comprises the step of carrying out high-pressure treatment on the functional transmission layer under the pressure of 0.1-10MPa for 5-120 min.
In one embodiment, the method for manufacturing a QLED device includes: s10, after the deposition of the function transmission layer on the device is completed, fixing the device in a closed container of a high-pressure processing device, wherein the high-pressure processing device further comprises an air inlet valve and an air outlet valve, and inert gas is introduced into the closed container and air in the closed container is removed by opening the air inlet valve and the air outlet valve; and S20, closing the gas outlet valve, continuously introducing inert gas until the pressure in the closed container reaches the preset pressure, and carrying out high-pressure treatment for the preset time. Further, after the step S20 is completed, the method further includes step S30, opening the gas outlet valve, and adjusting the pressure of the gas outlet valve and the pressure of the gas inlet valve, so that the closed container forms flowing inert gas, and the inert gas adsorbed on the surface of the device is removed. The inert gas is one of nitrogen, helium, neon or argon.
Further, the preparation method of the QLED device further includes a step of annealing the functional transmission layer after high-pressure treatment.
Further, in the preparation method of the QLED device, after the functional transmission layer is subjected to high-pressure treatment, the annealing temperature of the annealing treatment is 50-200 ℃ and the time is 10-30 min.
The invention also provides a QLED device prepared by any one of the methods.
The invention further provides a high-pressure processing device of the QLED device, which comprises a closed container, wherein a support for fixing the QLED device is arranged in the closed container, one end of the closed container is connected with an air inlet pipeline, the other end of the closed container is connected with an air outlet pipeline, the air inlet pipeline is provided with an air inlet valve and a first pressure gauge, the air outlet pipeline is connected with an air outlet valve and a second pressure gauge, and the other end of the air inlet pipeline is connected with an inert gas cylinder.
Has the advantages that: according to the invention, the functional transmission layers of the QLED device are subjected to high-pressure treatment, so that the functional transmission layer materials in the QLED device are combined more compactly, the combination between the functional transmission layers is tighter, the defects between interfaces are reduced, the non-radiative recombination is reduced, the injection efficiency of current carriers and the efficiency of composite luminescence are further improved, and the overall efficiency of the QLED device is improved.
Drawings
FIG. 1 is a flow chart of a preferred embodiment of the high pressure processing process of the present invention;
FIG. 2 is a schematic structural diagram of a high-voltage processing apparatus for a QLED device according to a preferred embodiment of the present invention;
fig. 3 is a schematic structural diagram of a positive QLED device according to a preferred embodiment of the invention in embodiment 1;
fig. 4 is a schematic structural diagram of a preferred embodiment of an inversion-type QLED device in embodiment 2 of the present invention.
Detailed Description
The invention provides a QLED device, a preparation method thereof and a high-pressure processing device, and the invention is further described in detail below in order to make the purpose, technical scheme and effect of the invention clearer and clearer. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the process of preparing a QLED device in the prior art, the combination of functional transmission layer materials is not compact, and interface defects usually exist among the functional transmission layers, so that the transmission efficiency of current carriers is easily reduced. Therefore, the functional transmission layer of the QLED device is subjected to high-voltage treatment, and the functional transmission layer is subjected to further high-voltage action, so that the compactness of combination between adjacent film layers can be remarkably improved, the defects between interfaces are reduced, and the transmission efficiency of current carriers and the efficiency of composite luminescence are improved. The functional transport layer of the present invention includes an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer, and is preferably an electron transport layer and/or a hole transport layer adjacent to the quantum dot light emitting layer.
The electron transport layer material of the present invention is not limited, and may be n-type ZnO or TiO2 with electron transport performance, or may be metal with low work function such as Ca and Ba, or may be compound materials such as ZrO2, CsF, LiF, CsCO3 and Alq3, or other electron transport materials.
The hole transport layer material can be PEDOT PSS, nickel oxide, molybdenum oxide, vanadium oxide, copper sulfide, copper thiocyanide, copper iodide and the like, and other hole transport materials.
And after the functional transmission layer is deposited on the device, placing the device in a closed container to perform high-pressure treatment in an inert environment. In order to ensure the pressing effect and form a compact film, the pressure of the high-pressure treatment is more than 1MPa, and the time is 5-120 min. Through a plurality of experiments of the inventor, the pressure of the high-pressure treatment is preferably more than 4 MPa. More preferably, it is greater than 6 MPa. The pressure of high-pressure treatment should be less than 10MPa because higher pressure has higher requirements on equipment and is easy to cause device damage.
Still further, in one embodiment, as shown in fig. 1, the process of the high pressure treatment of the present invention specifically comprises the steps of:
s10, after the deposition of the function transmission layer on the device is completed, fixing the device in a closed container of a high-pressure processing device, wherein the high-pressure processing device further comprises an air inlet valve and an air outlet valve, and inert gas is introduced into the closed container and air in the closed container is removed by opening the air inlet valve and the air outlet valve;
and S20, closing the gas outlet valve, continuously introducing inert gas until the pressure in the closed container reaches the preset pressure, and carrying out high-pressure treatment for the preset time.
Further, after the step of S20 is completed, the step S30 may be further performed to open the gas outlet valve, control the pressure of the gas inlet valve and the gas outlet valve, form a flowing inert gas in the closed container, and remove the inert gas adsorbed on the surface of the device.
In the invention, the high-pressure treatment of the functional transmission layer is realized in an inert environment, and the inert gas can be nitrogen, helium, neon, argon or the like.
Furthermore, the present invention further provides a high pressure processing apparatus for a QLED device, as shown in fig. 2, the high pressure processing apparatus includes a closed container 10, a support 20 for fixing a device to be processed is disposed in the closed container 10, one end of the closed container 10 is connected to an air inlet pipe 30, the other end of the closed container 10 is connected to an air outlet pipe 40, the air inlet pipe 30 is provided with an air inlet valve 31 and a first pressure gauge 32, and the air outlet pipe 40 is provided with an air outlet valve 41 and a second pressure gauge 42; the other end of the gas inlet pipe 30 is connected with an inert gas cylinder 50.
Specifically, in step S10, before the high pressure processing, the device is fixed in the support 20 of the closed container 10, and then the air inlet valve 31 and the air outlet valve 41 are opened simultaneously to introduce the inert gas to remove the air in the closed container 10, so as to prevent the oxygen in the air from acting on each function transmission layer in the device under high pressure and affecting the performance of the device.
In the step S20, after the air in the closed container 10 is completely removed, the air outlet valve 41 is closed, the inert gas is continuously introduced until the pressure in the closed container reaches the predetermined pressure value of 1-10MPa, and the high-pressure treatment is continued for 5-120 min.
In step S30, the gas outlet valve 41 is opened, and the pressures of the gas inlet valve 31 and the gas outlet valve 41 are controlled to form a flowing inert gas in the sealed container 10, so as to avoid the inert gas from being adsorbed on the surface of the device as much as possible. This is because the surface of the device may adsorb inert gas after high pressure processing, which easily causes the loose bonding between adjacent layers in the device and affects the carrier transport rate. The pressure of the air inlet valve is larger than that of the air outlet valve by controlling the pressure between the air inlet valve and the air outlet valve, so that inert gas flow is formed, and the inert gas adsorbed on the surface of the device is removed completely.
Furthermore, the invention also comprises a step of annealing after the high-pressure treatment is carried out on the function transmission layer. After the high-pressure treatment of the functional transmission layer, the quantum dot light-emitting layer or another functional transmission layer is required to be continuously deposited on the surface of the functional transmission layer, in order to ensure that solute components in the material of the functional transmission layer are not washed away by solvent components in the quantum dot light-emitting layer or another functional transmission layer in the process of depositing the quantum dot light-emitting layer or another functional transmission layer, the functional transmission layer is required to be annealed in advance, the annealing temperature of the functional transmission layer is 50-200 ℃, preferably 120-180 ℃, and the annealing time is 10-30 min.
The following further explains the preparation method of the invention for improving the QLED device by specific embodiments:
example 1 preparation of a positive type QLED device
As shown in fig. 3, the positive QLED device sequentially includes, from bottom to top, a substrate 100, a bottom electrode 200, a hole injection layer 300, a hole transport layer 400, a quantum dot light emitting layer 500, an electron transport layer 600, and a top electrode 700, and the specific preparation process is as follows:
1) firstly, placing the glass substrate 100 in ultrapure water, acetone water and isopropanol in sequence for ultrasonic cleaning, wherein the cleaning time in each step is 15 minutes, after the ultrasonic cleaning is finished, drying the glass substrate by using a nitrogen gun, and placing the glass substrate in an oven for drying to obtain the cleaned glass substrate 100 for later use;
2) sputtering and depositing a layer of patterned ITO electrode, namely a bottom electrode 200, on the cleaned glass substrate through a mask plate, wherein the thickness of the ITO electrode is 50 nm;
3) depositing a hole injection layer 300 on the bottom electrode 200, wherein the hole injection layer 300 is made of PEDOT (PSS), and annealing at 150 ℃ for 15min after deposition is finished;
4) depositing a hole transport layer 400 on the hole injection layer 300, wherein the hole transport layer 400 is made of TFB, then placing the hole transport layer 400 into a closed container shown in figure 2 for high-pressure treatment, wherein the pressure of the high-pressure treatment is 5MPa, the high-pressure treatment time is 30min, and after the high-pressure treatment is finished, carrying out annealing treatment, wherein the annealing temperature is 150 ℃ and the annealing time is 15 min;
5) depositing a quantum dot light-emitting layer 500 on the hole transport layer 400, wherein the quantum dot light-emitting layer 500 is made of red light quantum dot material; and after the deposition is finished, annealing the quantum dot light-emitting layer at the annealing temperature of 60 ℃ for 10 min.
6) Depositing an electron transmission layer 600 on the quantum dot light emitting layer 500, wherein the electron transmission layer 600 is made of n-type ZnO, after the deposition of the layer is finished, putting the device into a closed container shown in figure 2 for high-pressure treatment, the pressure of the high-pressure treatment is 7MPa, the time is 2 hours, and after the high-pressure treatment is finished, continuing screwing and annealing treatment, wherein the annealing temperature is 150 ℃, and the time is 15 minutes;
7) placing the devices with deposited functional layers in an evaporation bin, and thermally evaporating a layer of top electrode 700 with the thickness of 100nm through a mask plate, wherein the top electrode is made of Ag;
8) and after the evaporation of the device is finished, packaging the device, wherein the device can be packaged by a common machine or by a simpler manual method, so as to obtain the positive type QLED device of the embodiment.
Example 2 preparation of inverted QLED device
As shown in fig. 4, the inverted QLED device sequentially includes, from bottom to top, a substrate 100, a bottom electrode 200, an electron transport layer 600, a quantum dot light emitting layer 500, a hole transport layer 400, and a top electrode 700, and the specific preparation process is as follows:
1) firstly, placing the mica sheet substrate 100 in ultrapure water, acetone water and isopropanol in sequence for ultrasonic cleaning, wherein the cleaning time in each step is 15 minutes, drying the mica sheet substrate by using a nitrogen gun after the ultrasonic cleaning is finished, and placing the mica sheet substrate in an oven for drying to obtain the cleaned mica sheet substrate 100 for later use;
2) sputtering and depositing a layer of patterned ITO electrode, namely a bottom electrode 200, on the cleaned mica sheet substrate through a mask plate, wherein the thickness of the ITO electrode is 70 nm;
3) depositing an electron transport layer 600 on the substrate containing the bottom electrode, wherein the material of the electron transport layer 600 is Alq 3; after the deposition of the layer is finished, putting the device into a closed container shown in figure 2 for high-pressure treatment at the pressure of 6MPa for 2h, and annealing at the temperature of 80 ℃ for 15 min;
4) depositing a quantum dot light-emitting layer 500 on the electron transport layer 600, wherein the quantum dot light-emitting layer is made of a blue light quantum dot material; and after the deposition is finished, annealing the quantum dot light-emitting layer at the annealing temperature of 80 ℃ for 20 min.
5) Depositing a hole transport layer 400 on the quantum dot light-emitting layer 500, wherein the hole transport layer 400 is made of Poly-TPD, placing the device into a closed container shown in FIG. 2 for high-pressure treatment at the pressure of 10MPa for 1.5h, and then annealing at the annealing temperature of 120 ℃ for 5 min;
6) and placing the devices with deposited functional layers in an evaporation bin, and thermally evaporating a layer of 80nm top electrode 700 through a mask plate, wherein the top electrode is made of Al.
7) And after the evaporation of the device is finished, packaging the device, and packaging the device by using a common machine or a simple manual machine to obtain the inverse QLED device of the embodiment.
In summary, the invention provides a method for manufacturing a QLED device, which includes performing high-pressure treatment on a quantum dot light-emitting layer made of a nanomaterial to form a compact thin film, wherein the nanomaterial generates a certain crystallization effect under the action of high pressure, so as to improve the carrier transmission rate of the quantum dot light-emitting layer; furthermore, the invention also carries out high-pressure treatment on the functional transmission layer of the QLED device, so that the functional transmission layer in the QLED device is combined with the quantum dot light-emitting layer more tightly, the defects between interfaces are reduced, the non-radiative recombination is reduced, the injection efficiency of carriers and the efficiency of composite light-emitting are further improved, and the overall efficiency of the QLED device is improved.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (9)
1. A preparation method of a QLED device is characterized by comprising the step of carrying out high-pressure treatment of 1-10Mpa on a functional transmission layer under an inert environment after the functional transmission layer is deposited on the device.
2. The method of claim 1, wherein the functional transport layer is a hole transport layer and/or an electron transport layer.
3. The method for preparing a QLED device according to any one of claims 1 to 2, wherein the high pressure treatment time is 5 to 120 min.
4. A method for preparing a QLED device according to any of claims 1-2, wherein the high pressure treatment process comprises the steps of:
(1) after the functional transmission layer is deposited on the device, fixing the device in a closed container of a high-pressure processing device, wherein the high-pressure processing device further comprises an air inlet valve and an air outlet valve, and inert gas is introduced into the closed container and air in the closed container is removed by opening the air inlet valve and the air outlet valve;
(2) and closing the gas outlet valve, continuously introducing the inert gas until the pressure in the closed container reaches the preset pressure, and carrying out high-pressure treatment for the preset time.
5. The method for preparing a QLED device according to claim 4, wherein after the step (2) is completed, the gas outlet valve is opened, and the pressure of the gas outlet valve and the pressure of the gas inlet valve are adjusted, so that the closed container forms flowing inert gas, and the inert gas adsorbed on the surface of the device is removed.
6. A method of fabricating a QLED device as claimed in claim 4, wherein the inert gas is one of nitrogen, helium, neon or argon.
7. The method for manufacturing a QLED device according to any one of claims 1 to 2, further comprising a step of annealing the functional transmission layer after the high pressure treatment.
8. The method of claim 7, wherein the functional transmission layer is annealed at 50-200 ℃ for 10-30min after being subjected to high pressure treatment.
9. A QLED device prepared by the method of any one of claims 1 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710542314.8A CN109216512B (en) | 2017-07-05 | 2017-07-05 | QLED device, preparation method thereof and high-voltage processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710542314.8A CN109216512B (en) | 2017-07-05 | 2017-07-05 | QLED device, preparation method thereof and high-voltage processing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109216512A CN109216512A (en) | 2019-01-15 |
| CN109216512B true CN109216512B (en) | 2020-02-07 |
Family
ID=64993527
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710542314.8A Active CN109216512B (en) | 2017-07-05 | 2017-07-05 | QLED device, preparation method thereof and high-voltage processing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109216512B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114695738A (en) * | 2020-12-31 | 2022-07-01 | Tcl科技集团股份有限公司 | Preparation method of quantum dot light-emitting diode |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1164934A (en) * | 1995-08-31 | 1997-11-12 | 株式会社东芝 | Blue light emitting element and method for manufacturing same |
| CN1828976A (en) * | 2005-03-04 | 2006-09-06 | 日本东北先锋公司 | Method and apparatus for fabricating self-emission device |
| CN106252522A (en) * | 2016-09-09 | 2016-12-21 | Tcl集团股份有限公司 | The preparation method of QLED hole injection layer, QLED and preparation method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070241351A1 (en) * | 2006-04-14 | 2007-10-18 | Applied Materials, Inc. | Double-sided nitride structures |
| KR101451931B1 (en) * | 2012-12-12 | 2014-10-23 | 연세대학교 산학협력단 | Method for manufacturing colloidal quantum dot thin film and quantum dot solar cells |
-
2017
- 2017-07-05 CN CN201710542314.8A patent/CN109216512B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1164934A (en) * | 1995-08-31 | 1997-11-12 | 株式会社东芝 | Blue light emitting element and method for manufacturing same |
| CN1828976A (en) * | 2005-03-04 | 2006-09-06 | 日本东北先锋公司 | Method and apparatus for fabricating self-emission device |
| CN106252522A (en) * | 2016-09-09 | 2016-12-21 | Tcl集团股份有限公司 | The preparation method of QLED hole injection layer, QLED and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109216512A (en) | 2019-01-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101701257B1 (en) | Thin film encapsulation - thin ultra high barrier layer for oled application | |
| US20050248265A1 (en) | Multi-layer cathode in organic light-emitting devices | |
| CN104681731A (en) | Perovskite type electroluminescent device and preparation method thereof | |
| KR20030070534A (en) | Fabrication system and a fabrication method of a light emitting device | |
| CN102723442A (en) | Organic electroluminescent device and preparation method thereof | |
| WO2015000242A1 (en) | Oled device, manufacturing method thereof and display device | |
| CN108807724B (en) | Preparation method and application of perovskite luminescent layer, perovskite luminescent device and preparation method thereof | |
| US20220340812A1 (en) | Quantum dot film, quantum dot light-emitting diode and preparation method thereof | |
| CN102569678A (en) | Composite thin film packaging method of top emission OLED (Organic Light Emitting Diode) | |
| CN107146808A (en) | OLED manufacture method, OLED and display panel | |
| CN104911540B (en) | A kind of electron beam evaporation methods of the ito thin film of the anti-ESD abilities of raising LED | |
| CN109216512B (en) | QLED device, preparation method thereof and high-voltage processing device | |
| KR20160150606A (en) | Laminated sealing film forming method and forming apparatus | |
| CN108232038A (en) | A kind of light emitting diode based on calcium nutrition film and preparation method thereof | |
| WO2016123853A1 (en) | Vapor deposition and material replacement integrated device and use method therefor | |
| WO2022007183A1 (en) | Display panel, method for manufacturing display panel, and display apparatus | |
| CN109427978B (en) | QLED device and preparation method thereof | |
| CN114242897A (en) | Method for packaging perovskite photoelectric device | |
| CN106654032B (en) | A kind of full phosphorescence white light organic electroluminescent device of single layer and preparation method thereof | |
| CN109216568A (en) | A kind of preparation method of QLED device | |
| CN109390491A (en) | Light emitting diode and the preparation method and application thereof | |
| CN111048672B (en) | Perovskite electroluminescence-based white light LED and preparation method thereof | |
| CN114672314A (en) | Core-shell structure quantum dot, preparation method thereof, quantum dot light-emitting film and diode | |
| CN109390489A (en) | Light emitting diode and the preparation method and application thereof | |
| CN106784205B (en) | QLED and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |