CN109188871B - Projection type light source device - Google Patents
Projection type light source device Download PDFInfo
- Publication number
- CN109188871B CN109188871B CN201811183562.9A CN201811183562A CN109188871B CN 109188871 B CN109188871 B CN 109188871B CN 201811183562 A CN201811183562 A CN 201811183562A CN 109188871 B CN109188871 B CN 109188871B
- Authority
- CN
- China
- Prior art keywords
- light
- lens
- light source
- projection
- lenses
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Lenses (AREA)
Abstract
The invention provides a projection type light source device, which comprises a lamp bead light source, a light ray collecting system, a light equalizing system and an imaging system which are arranged in sequence; the light collection system comprises two plano-convex lenses which are symmetrically arranged, the plane lenses of the two plano-convex lenses face outwards, and the convex lenses are oppositely arranged; the light homogenizing system is a quartz cuboid square bar with a rectangular cross section, a light inlet surface of the square bar is embedded in a light absorption plate which is subjected to anodic oxidation blackening, and a light outlet surface of the square bar is provided with a mask plate; the imaging system comprises a first lens, a diaphragm, a second lens, a third lens, a fourth lens and a projection imaging panel which are sequentially arranged, wherein the first lens and the second lens are biconvex positive lenses, the third lens is a biconcave negative lens, the fourth lens is a crescent negative lens, and the concave surface of the crescent negative lens faces the third lens; the invention can carry out high-precision imaging and realize the photoetching effect, and the resolution reaches 35 line pairs/mm.
Description
Technical Field
The invention relates to the technical field of electronic appliances, in particular to a projection type light source device.
Background
The ultraviolet light curing technology (UV technology) is a technology in which a photoinitiator (or photosensitizer) is added to a system with a special formula (called a light curing system), and after high-intensity ultraviolet light generated in ultraviolet light (UV) light curing equipment is absorbed, active free radicals or cations are generated, so that polymerization, crosslinking and grafting reactions are initiated, and the system is converted from a liquid state to a solid state within a certain time.
The general type of ultraviolet light source uses a mercury lamp light source, the photoelectric conversion efficiency is low and the manufacturing process is environmentally polluting. The light distribution mode adopts a primary light distribution or simple secondary light distribution design, and has low light emitting efficiency and large structure volume. And because mercury lamp life is short, need often to follow the change lamp pipe, to the influence of accurate optical system.
Because the surface of the LED chip is provided with the golden finger which does not emit light and absorbs ultraviolet, and the light emitting area of the LED chip emits light to meet Lambert distribution, a light spot with high central light radiation illumination and low edge light radiation illumination can be formed after passing through the light collecting system, and the irradiance gradient distribution of the light spot is similar to the distribution of a cosine function. If the light spot irradiates the mask plate and is imaged by an imaging system, a photoetching pattern with uneven illumination can be generated, the length and width or the depth of the finally developed pattern are inconsistent, and a poor product is produced.
Therefore, it is an urgent problem to develop a projection light source device that can perform high-precision imaging and achieve the effect of photolithography.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a projection type light source device, which adopts an ultraviolet light-emitting diode (LED) light source, utilizes a high-performance LED lamp bead as the light source, enters a light equalizing system through a lens of a light collecting system, is reflected for multiple times in the light equalizing system, and then uniformly irradiates a mask plate with light, and an imaging objective lens specially designed at the rear part projects the graph on the mask plate to the surface of an object to be illuminated, so that the graph of the light source mask plate can be converted and projected to the surfaces of glue and ink to carry out high-precision imaging, and the photoetching effect is realized.
The invention is realized by the following steps:
the invention provides a projection type light source device, which comprises an ultraviolet lamp bead light source, a light collecting system, a light equalizing system and an imaging system which are arranged in sequence;
the light collection system comprises two plano-convex lenses which are symmetrically arranged, the plane lenses of the two plano-convex lenses face outwards, and the convex lenses are oppositely arranged;
the light homogenizing system comprises an anode oxidation blackening light absorption plate, a quartz cuboid square rod with a rectangular cross section and a mask plate, wherein the anode oxidation blackening light absorption plate, the quartz cuboid square rod and the mask plate are sequentially arranged in the light incidence direction;
imaging system includes first lens, diaphragm, second lens, third lens, fourth lens and the projection imaging panel that sets gradually from light incident direction, first lens and second lens are biconvex positive lens, the income plain noodles orientation of first lens the mask plate, the third lens is biconcave negative lens, the fourth lens is crescent negative lens, crescent negative lens's concave surface orientation the third lens.
The invention has the following beneficial effects:
the invention provides a projection type light source device, which adopts an ultraviolet light-emitting diode (LED) light source, utilizes a high-performance LED lamp bead as a light source, enters a light equalizing system through a lens of a light collecting system, after the light is reflected for many times in the light equalizing system, the light is uniformly irradiated on a mask, and an imaging objective lens specially designed at the rear part projects the graph on the mask to the surface of an object to be irradiated, so that the graph of the light source mask can be converted and projected to the surface of glue and ink to carry out high-precision imaging, and the photoetching effect is realized.
Drawings
Fig. 1 is a schematic structural diagram of a projection light source device according to an embodiment of the present invention;
fig. 2 is a light path diagram of an optical collecting system of a projection light source device according to an embodiment of the present invention;
fig. 3 is a light path diagram of a light uniformizing system of a projection light source device according to an embodiment of the present invention;
fig. 4 is a light uniformizing effect diagram of a light uniformizing system of a projection light source device according to an embodiment of the present invention;
fig. 5 is an optical path diagram of an imaging system of a projection light source device according to an embodiment of the present invention;
FIG. 6 is a diagram illustrating the relationship between the effective focal length and the image height of an imaging system of a projection light source device according to an embodiment of the present invention;
fig. 7 is a schematic diagram illustrating different components of an imaging system of a projection light source device according to an embodiment of the present invention;
FIG. 8 is a diagram illustrating an optical modulation function of a projection-type light source apparatus according to an embodiment of the present invention;
FIG. 9 is a spherical aberration curve chart of the projection-type light source device according to the embodiment of the present invention;
FIG. 10 is a graph illustrating an optical distortion of a projection-type light source apparatus according to an embodiment of the present invention;
fig. 11 is a diffuse speckle pattern of the projection light source device according to the embodiment of the invention;
FIG. 12 is a graph of a contrast curve of a projection-type light source device according to an embodiment of the present invention;
FIG. 13 is a graph of the overall optical effect when no masking plate is used;
FIG. 14 is a schematic view of a square bar of a projection light source device according to an embodiment of the present invention;
fig. 15 is an F-shape showing an enlarged inverted shape on the projection of the projection light source device according to the embodiment of the present invention;
in the figure 1, a lamp bead light source; 2. a light collection system; 21. a plano-convex lens; 3. a light equalizing system; 31. a light absorbing plate; 32. a square bar; 33. a mask plate; 4. an imaging system; 41. a first lens; 42. a diaphragm; 43. a second lens; 44. a third lens; 45. a fourth lens; 46. a projection imaging panel.
Detailed Description
As shown in fig. 1, an embodiment of the present invention provides a projection light source device, which includes a lamp bead light source 1, a light collecting system 2, a light equalizing system 3, and an imaging system 4, which are sequentially disposed;
the light collection system 2 comprises two planoconvex lenses 21 which are symmetrically arranged, the plane lenses of the two planoconvex lenses 21 face outwards, and the convex lenses are oppositely arranged;
the light homogenizing system 3 comprises a mask plate 33, an anodized and blackened light absorption plate 31 and a quartz cuboid square rod 32 with a rectangular cross section, wherein a light incident surface of the square rod 32 is embedded in the anodized and blackened light absorption plate 31, and a light emergent surface of the square rod 32 is provided with the mask plate 33;
imaging system 4 is including the first lens 41, diaphragm 42, second lens 43, third lens 44, fourth lens 45 and the projection imaging panel 46 that set gradually, first lens 41 and second lens 43 are biconvex positive lens, third lens 44 is biconcave negative lens, fourth lens 45 is crescent negative lens, crescent negative lens's concave surface orientation third lens 44.
According to the invention, an ultraviolet light-emitting diode (LED) light source is adopted, a high-performance LED lamp bead is used as the light source, the LED lamp bead enters a light-homogenizing system 3 through a lens of a light-collecting system 2, after multiple reflections in the light-homogenizing system 3, light is uniformly irradiated on a mask, and a pattern on the mask is projected to the surface of an object to be irradiated by a specially designed imaging objective lens behind the mask, so that the pattern of the light source mask can be converted and projected to the surface of glue and ink to perform high-precision imaging, the photoetching effect is realized, and the resolution of the pattern can reach 35 line pairs/mm, namely the maximum resolution of 14 microns.
As one of the above embodiments, the light source is an ultraviolet lamp bead light source. The single-point lamp bead light source consists of an outsourcing ultraviolet lamp pearl light source plate. The light source part of the LED lamp adopts purchased ultraviolet lamp beads, the LED lamp beads are Korea Shorweiao model UV CA3535 series lamp beads, and the light-emitting wavelength is 365 nm, 385 nm, 395 nm and 405 nm wave bands are selectable. The point light source can generate uniform ultraviolet light with wave length of 365 nm to 405 nm, and the ultraviolet light in the wave band can cure the glue and the printing ink which are sensitive to the ultraviolet light in the wave band. The method can convert and project the patterns of the light source mask plate to the surfaces of glue and printing ink, perform high-precision imaging and realize the photoetching effect.
As one of the above embodiments, the light source is a white light source. The invention can not only use UV lamp bead light source, but also use white light source, can realize white light all-band photoetching by matching with white light LED, and is widely applied to the field needing accurate pattern photoetching. The lamp bead light source (point light source) can be spliced in an array mode, patterns with larger areas can be formed through array splicing, and the application field is expanded.
Preferably, as shown in fig. 2, the light collection system uses a pair of symmetric plano-convex lenses as the collection system of the single-point light source. Because the half angle of light emergence of single-point light source is 30, not only can reduce the light inlet quantity of the even light system in rear, the light of wide-angle can form stray light and influence the formation of image quality of rear imaging system moreover, has introduced the arrangement collecting system of light in order to solve this problem. The lens of the system is made of a material with the glass brand number k9 of Duanguangming photoelectricity Limited company, and is made into a plano-convex lens (the size of the lens is shown in the figure), the planes of the two lenses face outwards, the convex surfaces are opposite (the light path is shown in the figure 2), the two convex lenses are symmetrical, the adverse effect caused by the optical spherical aberration of the single lens can be improved, light rays enter a rear light-equalizing system as much as possible at a small angle, and the light-emitting half angle of the emergent light rays is controlled within 6 degrees. The effective focal length f of the collecting system formed by the two lenses meets the requirement that f is less than 10.5mm and is less than 9.5 mm.
Preferably, in the light equalizing system, because the surface of the LED chip has the golden finger that does not emit light and absorbs ultraviolet light, and the light emitting area of the LED chip emits light to satisfy lambertian distribution, after passing through the light collecting system, a light spot with high central light radiation illuminance and low edge light radiation illuminance is formed, and the irradiance gradient distribution of the light spot is similar to the distribution of a cosine function. If the light spot irradiates the mask plate and is imaged by an imaging system, a photoetching pattern with uneven illumination can be generated, the length and width or the depth of the finally developed pattern are inconsistent, and a poor product is produced. As shown in FIG. 3, the embodiment adopts a square bar of quartz cuboid with square section, the length and width of the square is matched with the imaging lens, the side length l satisfies 1mm < l <4mm, the length s of the cuboid satisfies s > l/2tan theta to achieve the light homogenizing effect, and theta is the angle of light entering the square bar. The side wall of the square rod can be additionally plated with a high-reflection film to improve the light-emitting efficiency of the system. The light incident surface of the square rod is embedded in a light absorption plate which is blackened by anodic oxidation, and the surface of the light emergent surface is provided with a required mask plate.
As shown in fig. 4, it can be seen that the dodging system can present a pattern of uniform illumination, wherein the irradiance is shown in table 1. After the light rays come out of the light ray collecting system, the light rays enter the light homogenizing system. The square effective surface of the light incident surface of the square rod receives light, and redundant light outside the effective surface is absorbed by the light absorption plate and cannot enter a rear optical system. After passing through the light incident surface, the light is totally reflected in the cavity of the quartz square rod and is transmitted forwards (similar to an optical waveguide in an optical fiber), and after multiple reflections, the light reaches the light emergent surface of the quartz square rod. The hollow pattern on the mask plate can allow light to enter the next system, and other parts are absorbed, so that a uniform luminous pattern is finally obtained.
TABLE 1 irradiance
| Minimum (M) | 0.026838W/mm2 | Contrast ratio (C) | 0.065532 |
| Maximum (X) | 0.030603W/mm2 | Standard deviation (D) | 0.00059039 |
| Average (A) | 0.029118W/mm2 | Mean deviation (V) | 0.020276 |
Preferably, the imaging system is used for accurately imaging the uniformly luminous pattern on the surface of the illuminated object after passing through the mask plate. From the above, it can be seen that the uniform light emitting pattern is a uniform lambertian light emitting surface, and if the pattern is directly illuminated on the surface of the illuminated object, the light spot which cannot form the pattern cannot play a role of lithography, so that a uniquely arranged imaging system is required to solve the above problems. The imaging system in the embodiment of the invention consists of 4 lenses and a diaphragm. The first lens 41 is a biconvex positive lens, followed by a stop 42 after the first lens 41. The stop 42 is followed by a second lens 43, the second lens 43 being a biconvex positive lens. The second lens 43 is followed by a third lens 44, the third lens 44 being a biconcave negative lens. The third lens 44 is followed by a fourth lens 45, the fourth lens 45 is a negative meniscus lens, and the concave surface of the meniscus lens faces the mask 33. The fourth mirror 45 is followed by the image projection panel 46 of the optical system. The projection image panel 46 can also be the light-emitting surface of the fourth mirror 45. The imaging objective projects the pattern on the mask plate to the surface of the illuminated object, and the resolution of the pattern can reach 35 line pairs/mm, namely the resolution of maximum 14 microns.
As shown in fig. 5, is an optical path diagram of the imaging system. Preferably, F # 1.3; the distance between the imaging system and the mask plate is 10.5 mm; the effective focal length f is 19 mm; total optical length TTL <300 mm; aperture value < 0.012; the magnification is 10.4; the lens and void spacing in the optical system is such that: 0< | R5/R7| <1 is used to improve the spherical aberration of the system. As shown in fig. 6, ImgH/f <1.78 image height Img H, f effective focal length in the optical system determines the size of the mask and the size of the projected pattern matched with the optical system. Specifically, as shown in fig. 7, a projection apparatus according to an embodiment of the present invention uses the following specific data, which are shown in table 2 and table 3, where the unit is mm.
Table 2-effective focal length values for each lens: unit mm
| Parameter(s) | f1 | f2 | f3 | f4 |
| Numerical value | 29.2 | 17.9 | -26.1 | -24.8 |
TABLE 3
Examples of the experiments
As shown in fig. 8, which is an optical modulation function diagram of the projection light source device provided by the present invention, the MTF of the optical transfer function is greater than 0.2 at 35lp/mm line pair/mm, and it can be seen that the visual quality is good;
as shown in fig. 9, the spherical aberration curve of the projection light source device provided by the present invention is S-shaped. As shown in fig. 10, an optical distortion curve diagram of the projection light source apparatus provided by the present invention is shown, where the distortion is a straight line outside the main axis in the subject plane, and the straight line is changed into a curve after being imaged by the optical system, and then the imaging error of the optical system is called distortion; from FIG. 10, it can be seen that the optical distortion Dist is < 1%; the optical distortion is small. As shown in fig. 11, the diffuse spot RMS of the projection light source apparatus provided by the present invention is smaller than 55 um. As shown in fig. 12, the contrast curve of the projection light source device provided by the present invention has no optical vignetting. Spherical aberration (also known as Spherical aberration) is caused by the difference in the convergence of light rays between the central and peripheral regions of the lens. The far-axis light is refracted much more strongly through the lens than the near-axis light, so that the light refracted by the same object point does not meet at a point through the lens, but becomes a diffuse circular spot in the lens phase plane. Spherical aberration is the most important factor limiting the resolution power of the lens. Fig. 9 and fig. 10 show that the projection light source device provided by the present invention has small phase difference and good resolution;
in the overall system effect, if no mask plate is used, as shown in fig. 13, a uniform square spot of 26mm × 26mm can be projected at a position 190mm away from the light source, and the peak irradiance of the spot can reach 20mw/cm2. The calculation formula of the uniformity of the light spot is as follows: 1- (Imax-Imin) _ live2/Iavg; lighttools simulation Imax is 19.2mw/cm2；Imin＝20.8mw/cm2；Iavg＝20.2mw/cm2(ii) a The uniformity in the examples of the present invention was 96%.
In the overall system effect, if a mask plate is used, the mask plate 33 is set to be F-shaped; as shown in fig. 14, the square bar 32 shows an F shape thereon; as shown in fig. 15, the projection shows an enlarged inverted F-shape. By using the mask plate 33, a pattern with a magnification ratio of 10.4 times can be projected at a distance of 190mm, and the resolution of the pattern can reach 35lp/mm at most. The total optical power of the ultraviolet ray emitted by the ultraviolet point light source is more than 4 watts.
Preferably, the total length of the ultraviolet point light source optical system is not more than 350mm, and heat dissipation can be achieved in an air cooling mode.
As can be seen from the above, the projection light source device provided in the embodiment of the present invention uses the high performance LED lamp bead as a light source, enters the light equalizing square rod through the lens for collecting light, and after multiple reflections in the light equalizing square rod, the light is uniformly irradiated on the mask, and the image objective lens specially designed at the rear projects the pattern on the mask onto the surface of the object to be irradiated, where the resolution of the pattern can reach 35 line pairs/mm, that is, the maximum resolution of 14 μm. Optical distortion Dist < 1%; the diffuse spot is less than 55 um; no optical vignetting.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (5)
1. A projection type light source device is characterized by comprising an LED lamp bead light source, a light collecting system, a light equalizing system and an imaging system which are arranged in sequence;
the light collection system consists of two symmetrically arranged plano-convex lenses, the plane lenses of the two plano-convex lenses face outwards, and the convex lenses are oppositely arranged;
the light homogenizing system comprises an anode oxidation blackening light absorption plate, a quartz cuboid square rod with a rectangular cross section and a mask plate, wherein the anode oxidation blackening light absorption plate, the quartz cuboid square rod and the mask plate are sequentially arranged in the light incidence direction;
the imaging system comprises a first lens, a diaphragm, a second lens, a third lens, a fourth lens and a projection imaging panel which are sequentially arranged from the light incidence direction, wherein the first lens and the second lens are biconvex positive lenses, the light incidence surface of the first lens faces the mask plate, the third lens is a biconcave negative lens, the fourth lens is a crescent negative lens, and the concave surface of the crescent negative lens faces the third lens;
the lamp bead light source is an ultraviolet light source or a white light source.
2. The projection-type light source device of claim 1, wherein the ultraviolet light source is a korean sejviet model UV CA3535 series lamp bead, and the light emitting wavelength is any one of a wavelength band of 365 nm, 385 nm, 395 nm and 405 nm.
3. A projection-type light source apparatus as claimed in claim 1, wherein the half angle of the emergent light of the two planoconvex lenses in the light collection system is within 6 °.
4. The projection-type light source device of claim 1, wherein the effective focal length f of the two plano-convex lenses in the light collection system satisfies 9.5mm < f <10.5 mm.
5. A projection light source apparatus as claimed in claim 1, wherein the side length L of the cross section of the square bar satisfies 1mm < L <4mm, and the length S of the square bar satisfies S > L/2tan θ, where θ is an angle between a light ray entering the square bar and the horizontal cross section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811183562.9A CN109188871B (en) | 2018-10-11 | 2018-10-11 | Projection type light source device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811183562.9A CN109188871B (en) | 2018-10-11 | 2018-10-11 | Projection type light source device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109188871A CN109188871A (en) | 2019-01-11 |
| CN109188871B true CN109188871B (en) | 2020-11-17 |
Family
ID=64947735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811183562.9A Active CN109188871B (en) | 2018-10-11 | 2018-10-11 | Projection type light source device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109188871B (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103293863B (en) * | 2012-02-24 | 2015-11-18 | 上海微电子装备有限公司 | A kind of lithography illuminating system |
| CN105511231B (en) * | 2014-10-16 | 2019-03-29 | 中芯国际集成电路制造(上海)有限公司 | EUV light source and exposure device |
| CN104950427B (en) * | 2015-07-02 | 2017-06-13 | 中国科学院光电技术研究所 | Large-view-field high-numerical-aperture global surface photoetching machine projection objective |
| CN105182701B (en) * | 2015-10-15 | 2017-11-28 | 中国科学院上海应用物理研究所 | A kind of synchrotron radiation X-ray large area interference lithography system |
-
2018
- 2018-10-11 CN CN201811183562.9A patent/CN109188871B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN109188871A (en) | 2019-01-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111367136B (en) | Multi-channel projection optical assembly, multi-channel projection device and projection method | |
| JP6474918B2 (en) | Light guiding means and light source device | |
| CN107861253B (en) | Laser projection device | |
| TWI475333B (en) | Illumination optical system, exposure apparatus, and method of manufacturing device | |
| EP2253997A2 (en) | Illumination system for a microlithographic contact and proximity exposure apparatus | |
| US20180059475A1 (en) | Optics component with double-layered micro-lens array | |
| CN103568544A (en) | Curing optical system and printing equipment | |
| US20080267248A1 (en) | Exposure device | |
| CN102662307B (en) | High-resolution projection optical system | |
| CN203557830U (en) | Solidification optical system and printing device | |
| CN114442281B (en) | Direct-writing photoetching lens | |
| CN217098924U (en) | Combined matrix optical lens's projection arrangement and 3D printer | |
| CN109188871B (en) | Projection type light source device | |
| US20090026388A1 (en) | Illumination Homogenizer | |
| JPWO2019182073A1 (en) | Homogenizer, illuminating optics and illuminating equipment | |
| CN211979418U (en) | Three-band UV-LED exposure light source | |
| CN113515023B (en) | Dual-band illumination system and maskless direct-writing lithography equipment with same | |
| CN206479726U (en) | Even photosystem | |
| TW202332937A (en) | Optical system device and method for manufacturing optical element | |
| Jiang et al. | Design of UV LED illumination system for direct imaging lithography | |
| CN114035406A (en) | Novel ultraviolet parallel light source device and implementation method | |
| CN106292189A (en) | A kind of illuminator | |
| CN217085512U (en) | Direct-writing photoetching device | |
| CN221827185U (en) | Direct writing type photoetching exposure device | |
| CN112394619A (en) | Exposure system of direct-writing lithography machine |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: No. 5, 6, 10, 11, 12, 13, 14, 15, 5th Floor, R&D Building, No. 1, Modern Service Industry Base, Science and Technology Park, Huazhong University of Science and Technology, No. 13, Daxueyuan Road, East Lake New Technology Development Zone, Wuhan City, Hubei Province, 430000 Patentee after: Wuhan Youweixin Technology Co., Ltd. Address before: 5th Floor, R&D Building/Unit 1, Huazhong University of Science and Technology Science Park Modern Service Industry Base, No. 13, Daxueyuan Road, East Lake New Technology Development Zone, Wuhan City, Hubei Province, 430000 Patentee before: WUHAN UV LEDTEK Co.,Ltd. |