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CN109148350A - Dicing tape integrated cementability piece - Google Patents

Dicing tape integrated cementability piece Download PDF

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Publication number
CN109148350A
CN109148350A CN201810680930.4A CN201810680930A CN109148350A CN 109148350 A CN109148350 A CN 109148350A CN 201810680930 A CN201810680930 A CN 201810680930A CN 109148350 A CN109148350 A CN 109148350A
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CN
China
Prior art keywords
film
dicing tape
resin
layer
cementability
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201810680930.4A
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Chinese (zh)
Other versions
CN109148350B (en
Inventor
木村龙
木村龙一
志贺豪士
高本尚英
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
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Nitto Denko Corp
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Publication of CN109148350A publication Critical patent/CN109148350A/en
Application granted granted Critical
Publication of CN109148350B publication Critical patent/CN109148350B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/245—Vinyl resins, e.g. polyvinyl chloride [PVC]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/40—Adhesives in the form of films or foils characterised by release liners
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • C09J2433/006—Presence of (meth)acrylic polymer in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Adhesive Tapes (AREA)
  • Dicing (AREA)
  • Die Bonding (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

The present invention provides a kind of dicing tape integrated cementability piece, is suitable in order to which the cutting off of obtaining that the semiconductor chip with adhered thin film carried out using dicing tape integrated cementability piece of the singualtion by semiconductor crystal wafer is cut off with the good of realization cementability piece in extension process.Dicing tape integrated cementability piece (X) of the invention has cutting belt (20) and cementability piece.Cutting belt (20) has the stepped construction comprising substrate (21) and adhesive phase (22).Cementability piece is closely sealed with the adhesive phase (22) of cutting belt (20) in a manner of it can remove.Cementability piece is, for example, the film (10) of semiconductor chip back-protective.Breaking strength in cementability piece, the tension test that carries out under conditions of initial chuck spacing 16mm, -15 DEG C and load are increased speed 1.2N/ minutes to the cementability piece test film of width 2mm is 1.2N or less and elongation at break is 1.2% or less.

Description

Dicing tape integrated cementability piece
Technical field
The present invention relates to can be in dicing tape integrated cementability piece used in the manufacturing process of semiconductor device.
Background technique
In the manufacturing process of semiconductor device, sometimes corresponding big to the semiconductor crystal wafer fitting as workpiece On the basis of small dicing tape integrated cementability piece, obtained by the singualtion of the semiconductor crystal wafer with adhered thin film Semiconductor chip.As dicing tape integrated cementability piece, dicing tape integrated back-protective film, so-called can be enumerated Cut die bonding film etc..Dicing tape integrated back-protective film has the stepped construction comprising substrate and adhesive phase Cutting belt and the back-protective film closely sealed with the adhesive phase, for obtain with semiconductor chip back-protective The semiconductor chip of the comparable adhered thin film of chip size.On the other hand, cutting die bonding film have comprising substrate and The cutting belt of the stepped construction of adhesive phase and the die bonding film closely sealed with the adhesive phase, for obtain with core The piece sizable chip engagement semiconductor chip of adhering film.These are related to the technology of dicing tape integrated cementability piece It is recorded in for example following Patent Documents 1 to 4.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2007-2173 bulletin
Patent document 2: Japanese Unexamined Patent Publication 2010-177401 bulletin
Patent document 3: Japanese Unexamined Patent Publication 2011-151360 bulletin
Patent document 4: Japanese Unexamined Patent Publication 2016-213244 bulletin
Summary of the invention
Problems to be solved by the invention
As the method for using cutting die bonding film to obtain the semiconductor chip with chip engagement adhering film One of, it is known to it undergoes for being extended to the cutting belt in cutting die bonding film and cutting off die bonding film The method of process.In this method, firstly, being bonded partly leading as workpiece on the die bonding film of cutting die bonding film Body wafer.The semiconductor crystal wafer is processed into and can for example be cut off in the cutting off of die bonding film later and singualtion For multiple semiconductor chips.Then, in order to close with semiconductor chip respectively to be generated from the die bonding film in cutting belt The mode of the multiple adhered thin film small pieces closed cuts off the die bonding film, and the cutting belt for cutting die bonding film is extended (the extension process cut off).In the extension process, being engaged with chip in the semiconductor crystal wafer on die bonding film Film, which cuts off position corresponding to position and also generates, to be cut off, by semiconductor crystal wafer list on cutting die bonding film or cutting belt Piece turns to multiple semiconductor chips.Then, such as after cleaning process, each semiconductor chip is equivalent to closely sealed on it The adhering film of chip size is jacked up together from the downside of cutting belt by the pin component of mechanism for picking and the quilt from cutting belt It picks up.In this way, the available semiconductor chip with die bonding film adhering film.Partly the leading with adhering film Body chip is bonded on installation base plate across the adhering film and by chip engagement.
It is dicing tape integrated for this when dicing tape integrated cementability piece is for as described above cut off with process is extended Cementability piece in cementability piece requires suitably be cut off in the extension process cutting off predetermined position.
The present invention is contemplated based on above such situation, and its purpose is to provide a kind of dicing tape integrated viscous Connecing property piece is suitable for obtaining the semiconductor chip with adhered thin film for the singualtion by semiconductor crystal wafer and making Well cutting off for cementability piece is realized in the extension process cut off carried out with dicing tape integrated cementability piece.
The solution to the problem
According to the present invention, it is possible to provide dicing tape integrated cementability piece.The dicing tape integrated cementability piece has cutting Band and cementability piece.Cutting belt has the stepped construction comprising substrate and adhesive phase.Cementability piece in a manner of it can remove with Adhesive phase in cutting belt is closely sealed.The cementability piece, to the cementability piece test film of width 2mm in initial chuck spacing The breaking strength in tension test that 16mm, -15 DEG C and load carry out under conditions of increasing speed 1.2N/ minutes be 1.2N with Under, preferably 1.1N or less, more preferably 1N or less.At the same time, extension at break of the cementability piece in same stretch test Rate (ratio of the length of stretched portion when fracture relative to the length before stretching) be 1.2% or less, preferably 1.1% with Under, more preferably 1% or less.The dicing tape integrated cementability piece of this composition can be in the manufacturing process of semiconductor device It uses.Specifically, being protected as cementability piece using the so-called back side for dicing tape integrated cementability piece of the invention The dicing tape integrated back-protective film for protecting the composition of film, can be used for obtaining with semiconductor chip back-protective With the semiconductor chip of the comparable adhered thin film of chip size.In addition, for dicing tape integrated cementability piece of the invention, As the cutting die bonding film for the composition for using so-called die bonding film for cementability piece, can be used for obtaining With the semiconductor chip for the chip engagement adhering film for being equivalent to chip size.
For the cementability piece in the dicing tape integrated cementability piece, as described above, the cementability piece of width 2mm is tested In the tension test that piece carries out under conditions of initial chuck spacing is increased speed 1.2N/ minutes from 16mm, -15 DEG C and load Breaking strength is 1.2N or less, preferably 1.1N or less, more preferably 1N or less.For this composition, in semiconductor device The semiconductor chip with adhered thin film is obtained in manufacturing process and is cut off using the dicing tape integrated cementability piece implementation In the case where with extension process, inhibiting to act on cutting off for the cementability piece to cut off the cementability piece in cutting belt It is suitable in terms of power.
For the cementability piece in the dicing tape integrated cementability piece, as described above, the cementability piece of width 2mm is tested It is disconnected in the tension test that piece carries out under conditions of initial chuck spacing 16mm, -15 DEG C and load are increased speed 1.2N/ minutes Splitting elongation is 1.2% or less, preferably 1.1% or less, more preferably 1% or less.For this composition, in semiconductor device Manufacturing process in obtain with adhered thin film semiconductor chip and implemented using the dicing tape integrated cementability piece It is suitable in terms of inhibiting that the cementability piece in cutting belt is made to cut off required tensile elongation in the case where cutting off with extension process 's.
As described previously for dicing tape integrated cementability piece of the invention, inhibiting viscous in cutting belt in order to cut off Connecing property piece and to act on cutting off in terms of power for the cementability piece be expediently, and being suitable for inhibiting for the cementability piece cut off Tensile elongation.Such dicing tape integrated cementability piece is obtained for the singualtion by semiconductor crystal wafer with viscous The semiconductor chip of connecing property film cut off with extension process in the case where, be adapted for carrying out cementability piece well cut off.Tool For body, shown in embodiment as be described hereinafter and comparative example.
Cementability piece in the dicing tape integrated cementability piece preferably has a stepped construction, the stepped construction include with It can the 2nd layer in the mode of removing and closely sealed the 1st layer and the 1st layer of adhesive phase of cutting belt.This composition is for example suitable for Individually embody in cementability piece to characteristic required by cutting belt adhesive phase side surface and to the workpiece opposite with the surface Attach the characteristic required by surface.In addition, from taking into account to function required by the layers 1 and 2 in cementability piece in this way From the perspective of, the 1st layer of thickness relative to the ratio of the 2nd layer of thickness is preferably 0.2~4, more preferably 0.2~1.5, more Preferably 0.3~1.3, it is more preferably 0.6~1.1.
When cementability piece in the dicing tape integrated cementability piece is back-protective film, preferably above-mentioned 1st layer has Thermosetting property and above-mentioned 2nd layer show thermoplasticity.Have for the 1st layer in the present invention and constituted as thermosetting property, to the back side By pyroprocesses such as so-called reflow process after the marking that the 1st layer surface implementation of protective film is carried out by laser labelling In the case of, it is adapted ensure that the identification of marking information.In addition, for the 1st layer in the present invention have thermosetting property and the 2nd layer shows Thermoplasticity is such to be constituted, and compared with back-protective film is for example made of such constitute single thermoset layer, is suitable for Above-mentioned cut off is cut off with the good of realization back-protective film in extension process.That is, in back-protective film the 1st layer have thermosetting Property and the 2nd layer show that above-mentioned be formed in as thermoplasticity is taken into account the identification for marking information in back-protective film and ensured It is well suitable in terms of the realization of cutting off property.
Detailed description of the invention
Fig. 1 is the schematic cross-section of the dicing tape integrated cementability piece of an embodiment of the invention.
Fig. 2 indicates one in the manufacturing method for semiconductor device using dicing tape integrated cementability piece shown in FIG. 1 Operation break-down.
Fig. 3 indicates one in the manufacturing method for semiconductor device using dicing tape integrated cementability piece shown in FIG. 1 Operation break-down.
Fig. 4 indicates one in the manufacturing method for semiconductor device using dicing tape integrated cementability piece shown in FIG. 1 Operation break-down.
Fig. 5 indicates one in the manufacturing method for semiconductor device using dicing tape integrated cementability piece shown in FIG. 1 Operation break-down.
Fig. 6 indicates one in the manufacturing method for semiconductor device using dicing tape integrated cementability piece shown in FIG. 1 Operation break-down.
Fig. 7 indicates one in the manufacturing method for semiconductor device using dicing tape integrated cementability piece shown in FIG. 1 Operation break-down.
Fig. 8 shows one in the manufacturing method for semiconductor device for using dicing tape integrated cementability piece shown in FIG. 1 Operation break-down.
Fig. 9 indicates one in the manufacturing method for semiconductor device using dicing tape integrated cementability piece shown in FIG. 1 Operation break-down.
Figure 10 indicates one in the manufacturing method for semiconductor device using dicing tape integrated cementability piece shown in FIG. 1 Operation break-down.
Figure 11 indicates one in the manufacturing method for semiconductor device using dicing tape integrated cementability piece shown in FIG. 1 Operation break-down.
Description of symbols
The dicing tape integrated cementability piece of X
10,10 ' films (cementability piece)
20 cutting belts
21 substrates
22 adhesive phases
W, 30A, 30B semiconductor crystal wafer
30C semiconductor crystal wafer dividing body
30a modification area
30b slot segmentation
31 semiconductor chips
Specific embodiment
Fig. 1 is the schematic cross-section of the dicing tape integrated cementability piece X of an embodiment of the invention.Cutting belt one Figure cementability piece X can be used in the manufacturing process of semiconductor device, has comprising the film 10 as cementability piece and cuts With 20 stepped construction.In present embodiment, film 10 be fit in semiconductor crystal wafer as workpiece etc. circuit it is non-formation Face, that is, back side back-protective film.Cutting belt 20 has the stepped construction comprising substrate 21 and adhesive phase 22.Adhesive phase 22 have adhesive surface 22a in 10 side of film.Relative to adhesive phase 22 or its adhesive surface 22a in a manner of it can remove with film 10 It is closely sealed.In addition, dicing tape integrated cementability piece X has and the disc of the corresponding sizes such as semiconductor crystal wafer as workpiece Shape.For such dicing tape integrated cementability piece X, specifically, as dicing tape integrated back-protective film, it can For obtain it is with semiconductor chip back-protective and the semiconductor chip of the comparable adhered thin film of chip size, Such as it is used in aftermentioned such extension process.
Film 10 as back-protective film, which has, includes Laser labeling layer 11 (the 1st layer) and wafer fixing layer 12 the (the 2nd Layer) stepped construction.Laser labeling layer 11 is located at 20 side of cutting belt in film 10, closely sealed with cutting belt 20.It is filled in semiconductor Laser labelling is implemented to the surface of 20 side of cutting belt in Laser labeling layer 11 in the manufacturing process set.In addition, present embodiment In, Laser labeling layer 11 is containing thermosetting component and in the state of heat cure.The position in film 10 of wafer fixing layer 12 It is in uncured state in the side of the workpiece such as laminated semiconductor wafer, in present embodiment and shows thermoplasticity.
For the Laser labeling layer 11 in film 10, can have as resin component comprising thermosetting resin and thermoplasticity The composition of resin, it is possible to have comprising with the thermoplasticity that can react and generate the heat-curable functional group being bonded with curing agent The composition of resin.
There is the thermosetting resin when composition comprising thermosetting resin and thermoplastic resin as Laser labeling layer 11, Such as it can enumerate: epoxy resin, phenolic resin, amino resins, unsaturated polyester resin, polyurethane resin, organic siliconresin And thermoset polyimide resin.Laser labeling layer 11 can contain a kind of thermosetting resin, can also contain two or more Thermosetting resin.From semiconductor from film 10, that the back protection film institute protected object formed as described later can be become The poor tendency of the ionic impurity of the corrosion of chip etc. is set out, laser mark of the epoxy resin preferably as film 10 Remember the thermosetting resin in layer 11.In addition, as making epoxy resin show heat cured curing agent, preferably phenolic aldehyde tree Rouge.
It as epoxy resin, such as can enumerate: bisphenol A type epoxy resin, bisphenol f type epoxy resin, bisphenol S type epoxy Resin, brominated bisphenol a type epoxy resin, bisphenol-A epoxy resin, bisphenol AF type epoxy resin, biphenyl type epoxy resin, Naphthalene type epoxy resin, fluorenes type epoxy resin, phenol novolak type epoxy resin, o-cresol phenolic epoxy varnish, three The bifunctional epoxy resins, multi-functional epoxy tree such as hydroxy phenyl methane type epoxy resin and four hydroxy phenyl ethane type epoxy resin Rouge.It as epoxy resin, can also enumerate: hydantoins type epoxy resin, triglycidyl group isocyanurate type asphalt mixtures modified by epoxy resin Rouge and glycidyl amine type epoxy resin.In addition, Laser labeling layer 11 can contain a kind of epoxy resin, can also contain there are two types of Above epoxy resin.
Phenolic resin plays a role as the curing agent of epoxy resin, as such phenolic resin, such as can enumerate: Phenol resol resins, phenol aralkyl resin, cresol novolac resin, t-butylphenol novolac resin and nonyl The novolak phenolics such as phenol resol resins.In addition, can also be enumerated as the phenolic resin: first rank phenolic aldehyde The polystyrene such as type phenolic resin and poly(4-hydroxystyrene).It is particularly preferred as the phenolic resin in Laser labeling layer 11 It is: phenol resol resins, phenol aralkyl resin.It, can be in addition, curing agent of the Laser labeling layer 11 as epoxy resin Containing a kind of phenolic resin, two or more phenolic resin can also be contained.
When Laser labeling layer 11 is containing epoxy resin and as the phenolic resin of its curing agent, relative in epoxy resin 1 equivalent of epoxy group, the hydroxyl in phenolic resin be preferably 0.5~2.0 equivalent, more preferably 0.8~1.2 equivalent ratio match Mixed two resins.This be formed in when Laser labeling layer 11 solidifies can make the curing reaction of the epoxy resin and phenolic resin abundant The aspect that ground carries out is preferred.
From the viewpoint of solidifying Laser labeling layer 11 suitably in this way, thermosetting resin in Laser labeling layer 11 Content ratio is preferably 5~60 mass %, more preferably 10~50 mass %.
Thermoplastic resin in Laser labeling layer 11 for example undertakes binder function, as Laser labeling layer 11 have comprising The thermoplastic resin when composition of thermosetting resin and thermoplastic resin, such as can enumerate: acrylic resin, natural rubber Glue, butyl rubber, isoprene rubber, neoprene, vinyl-vinyl acetate copolymer, ethylene-acrylic acid copolymer, second Alkene-acrylate copolymer, polybutadiene, polycarbonate resin, thermoplastic polyimide resin, 6- nylon, 6,6- Buddhist nun The saturated polyesters such as the polyamides such as dragon, phenoxy resin, polyethylene terephthalate, polybutylene terephthalate (PBT) Resin, polyamide-imide resin and fluororesin.Laser labeling layer 11 can contain a kind of thermoplastic resin, can also contain two Kind or more thermoplastic resin.From the aspect of from ionic impurity, few and heat resistance is high, as the heat in Laser labeling layer 11 Plastic resin, preferably acrylic resin.
Acrylic resin when Laser labeling layer 11 contains acrylic resin as thermoplastic resin is preferably with matter The monomeric unit that amount ratio meter is originated from (methyl) acrylate includes most." (methyl) acrylic acid " refer to " acrylic acid " and/or " methacrylic acid ".
As (methyl) acrylate for the monomeric unit for being used to form acrylic resin, i.e. as acrylic resin Composition monomer (methyl) acrylate, such as can enumerate: (methyl) alkyl acrylate, (methyl) acrylate base Ester and (methyl) benzyl acrylate.It as (methyl) alkyl acrylate, such as can enumerate: the first of (methyl) acrylic acid Ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, the tert-butyl ester, secondary butyl ester, pentyl ester, isopentyl ester, own ester, heptyl ester, monooctyl ester, 2- second The own ester of base, different monooctyl ester, nonyl ester, last of the ten Heavenly stems ester, isodecyl ester, hendecane base ester, dodecyl ester (i.e. Lauryl Ester), tridecane base ester, Tetradecane base ester, cetyl ester, stearyl and eicosane base ester.As (methyl) acrylate base ester, such as can It enumerates: the ring pentyl ester and cyclohexyl of (methyl) acrylic acid.It as (methyl) benzyl acrylate, such as can enumerate: (first Base) phenyl acrylate and (methyl) benzyl acrylate.As the composition monomer of acrylic resin, a kind of (methyl) can be used Acrylate can also use two or more (methyl) acrylate.In addition, acrylic resin can will be used to form it Starting monomer polymerization obtain.It as polymerization, such as can enumerate: polymerisation in solution, emulsion polymerization, bulk polymerization and outstanding Floating polymerization.
It, can be with will be with (methyl) propylene for acrylic resin, such as its cohesive force, the modification of heat resistance One or more kinds of other monomers of acid esters copolymerization are as composition monomer.It as such monomer, such as can enumerate: contain Carboxylic monomer, hydroxyl monomer, contains epoxy based monomers, monomer containing sulfonic group, phosphorous acid-based monomers, acrylamide at anhydride monomers And acrylonitrile.As carboxyl group-containing monomer, such as can enumerate: acrylic acid, methacrylic acid, (methyl) carboxyethyl acrylates, (methyl) acrylic acid carboxyl pentyl ester, itaconic acid, maleic acid, fumaric acid and crotonic acid.As anhydride monomers, such as can enumerate: Maleic anhydride and itaconic anhydride.It as hydroxyl monomer, such as can enumerate: (methyl) acrylic acid 2- hydroxy methacrylate, (methyl) Acrylic acid 2- hydroxy propyl ester, (methyl) acrylic acid 4- hydroxybutyl, the own ester of (methyl) acrylic acid 6- hydroxyl, (methyl) acrylic acid 8- Hydroxyl monooctyl ester, (methyl) acrylic acid 10- hydroxyl last of the ten Heavenly stems ester, (methyl) acrylic acid 12- hydroxylauric ester and (methyl) acrylic acid (4- hydroxyl Ylmethyl cyclohexyl) methyl esters.It as epoxy based monomers are contained, such as can enumerate: (methyl) glycidyl acrylate and (first Base) acrylic acid methylglycidyl esters.As monomer containing sulfonic group, such as can enumerate: styrene sulfonic acid, allyl sulphonic acid, 2- (methyl) acrylamide-2-methyl propane sulfonic, (methyl) acrylamide propane sulfonic acid and (methyl) propane sulfonic acid.Make It for phosphorous acid-based monomers, such as can enumerate: 2- hydroxyethyl acryloyl phosphate.
Acrylic resin contained in Laser labeling layer 11 is preferably conveniently selected from butyl acrylate, acrylic acid second The copolymer of monomer in ester, acrylonitrile, acrylic acid, 2-EHA and glycidyl acrylate.This composition The identification of the marking information carried out by laser labelling is taken into account in the film 10 as back-protective film and is cutting off use Aftermentioned good the cutting off property aspect extended in process is preferred.
When Laser labeling layer 11 is had comprising composition with the thermoplastic resin of heat-curable functional group, as the thermoplasticity The acrylic resin containing heat-curable functional group can be used for example in resin.It is used to form this and contains heat-curable functional group's Monomeric unit of the acrylic resin of acrylic resin preferably in terms of mass ratio from (methyl) acrylate includes most It is more.As such (methyl) acrylate, such as the composition as acrylic resin contained in Laser labeling layer 11 (methyl) acrylate similar to the above can be used in monomer.On the other hand, as being used to form containing heat-curable functional group Acrylic resin heat-curable functional group, such as can enumerate: glycidyl, carboxyl, hydroxyl and isocyanate group.Its In, glycidyl and carboxyl can be properly used.It, can be with that is, as the acrylic resin containing heat-curable functional group Properly use resinoid containing glycidyl acrylic, resinoid containing carboxy acrylic.In addition, according to thermosetting property function is contained The type of heat-curable functional group in the acrylic resin of group selects the curing agent that can be reacted.Containing thermosetting Property functional group acrylic resin heat-curable functional group be glycidyl when, as curing agent, can be used as ring The phenolic resin similar to the above of oxygen resin curing agent.
The composition for being used to form Laser labeling layer 11 preferably comprises thermal curing catalyst.In the solidification of Laser labeling layer 11 When so that the curing reaction of resin component is sufficiently carried out or improve the aspect of curing reaction speed, preferably formed to Laser labeling layer With being compounded thermal curing catalyst in composition.As such thermal curing catalyst, such as can enumerate: imidazole compound, Triphenylphosphine based compound, amine compound and three haloboranes based compounds.As imidazole compound, such as can enumerate Out: 2-methylimidazole, 2- undecyl imidazole, 2- pentadecyl imidazoles, DMIZ 1,2 dimethylimidazole, 2-ethyl-4-methylimidazole, 2- phenylimidazole, 2- phenyl -4-methylimidazole, 1 benzyl 2 methyl imidazole, 1- benzyl -2- phenylimidazole, 1- cyano ethyl - 2-methylimidazole, 1- cyano ethyl -2- undecyl imidazole, 1- cyano ethyl -2- phenylimidazole trimellitate, 2,4- bis- Amino -6- [2 '-methylimidazolyls-(1 ')]-ethyl-s-triazine, 2,4- diamino -6- [2 '-undecyl imidazole bases - (1 ')]-ethyl-s-triazine, 2,4- diamino -6- [2 '-ethyls -4 '-methylimidazolyl-(1 ')]-ethyl-s-triazine, 2,4- Diamino -6- [2 '-methylimidazolyls-(1 ')]-ethyl-s-triazine isocyanuric acid adduct, 2- phenyl -4,5- bishydroxymethyl Imidazoles and 2- phenyl -4- methyl -5- hydroxymethylimidazole.It as triphenylphosphine based compound, such as can enumerate: triphenyl Phosphine, three (butyl phenyl) phosphines, three (p-methylphenyl) phosphines, three (nonyl phenyl) phosphines, diphenylmethyl Phenylphosphine, tetraphenylphosphonibromide bromide Phosphonium, three phenyl-bromide Phosphonium of first base, methyl triphenyl phosphonium chloride, methoxymethyl triphenylphosphonium phosphonium chloride and benzyl triphenyl phosphonium chloride Phosphonium.It further include the compound simultaneously with triphenylphosphine structure and triphenyl borine alkyl structure in triphenylphosphine based compound.As Such compound, such as can enumerate: tetraphenylphosphoniphenolate tetraphenylborate, four ptolylboronic acid ester of tetraphenylphosphoniphenolate, benzyl Triphenyl phosphonium tetraphenylborate and triphenylphosphine triphenylborane.It as amine compound, such as can enumerate: monoethanolamine Trifluoroborate and dicyandiamide.As three haloboranes based compounds, such as three chloroboranes can be enumerated.Laser labeling layer is formed A kind of thermal curing catalyst can be contained with composition, two or more thermal curing catalysts can also be contained.
Laser labeling layer 11 can also contain filler.Filler is compounded into Laser labeling layer 11 from adjustment Laser labeling layer 11 The physical property such as elasticity modulus, yield strength, elongation at break in terms of from the point of view of preferably.As filler, can enumerate: inorganic filler and Organic filler.As the constituent material of inorganic filler, such as can enumerate: aluminium hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, Calcium silicates, magnesium silicate, calcium oxide, magnesia, aluminium oxide, aluminium nitride, aluminium borate whisker, boron nitride, crystalline silica and non- Crystalloid silica.As the constituent material of inorganic filler, can also enumerate: the metal simple-substances such as aluminium, gold, silver, copper, nickel, alloy, Amorphous carbon, graphite etc..As the constituent material of organic filler, such as can enumerate: polymethyl methacrylate (PMMA) gathers Acid imide, polyamidoimide, polyether-ether-ketone, polyetherimide and polyesterimide.Laser labeling layer 11 can contain one kind Filler can also contain two or more fillers.The filler can also have the various shapes such as spherical, needle-shaped, sheet.Laser mark The average grain diameter for remembering the filler of the layer 11 containing filler when is preferably 0.005~10 μm, more preferably 0.05~1 μm.The filler Average grain diameter be that 10 μm of such are formed in Laser labeling layer 11 below obtain sufficient filler additive effect and ensure It is suitable in terms of heat resistance.Particles distribution instrument (trade name " the LA- of luminosity formula can be used for example in the average grain diameter of filler 910 ", Horiba Ltd's system) it finds out.In addition, the content of filler when Laser labeling layer 11 is containing filler is preferred For 10 mass % or more, more preferably 15 mass % or more, more preferably 20 mass % or more.It is preferably 50 mass % with content Below, 47 mass % or less, more preferably 45 mass % or less are more preferably.
Laser labeling layer 11 contains colorant in the present embodiment.Colorant can be pigment, can also be dyestuff.Make For colorant, such as can enumerate: black system colorant, cyan system colorant, magenta are colorant and yellow class colorant.? It is marked in terms of the high identification of the information realization of Laser labeling layer 11 for by laser labelling, Laser labeling layer 11 preferably contains There is black system colorant.As black system colorant, such as can enumerate: carbon black, graphite (blacklead), copper oxide, manganese dioxide, The azo pigments such as azomethine azo black, nigrosine, black, titanium is black, Cyanine Black, active carbon, ferrite, magnetic iron ore, oxidation Chromium, iron oxide, molybdenum disulfide, composite oxides system black pigment, the organic black dye of the organic black dyes of anthraquinone system and azo system Material.It as carbon black, such as can enumerate: furnace black, channel black, acetylene black, thermal crack black and lampblack.It is coloured as black system Agent can also enumerate: C.I. solvent black 3, same to 7, same to 22, same to 27, same to 29, same to 34, same 43 and same 70.It is coloured as black system Agent can also enumerate: C.I. direct black 17, same to 19, same to 22, same to 32, same to 38, same 51 and same 71.As black system colorant, also Can enumerate: C.I. acid black 1, with 2, with 24, with 26, with 31, with 48, with 52, with 107, with 109, with 110, with 119 and same 154.It as black system colorant, can also enumerate: C.I. dispersion black 1, same to 3, same 10 and same 24.As black system colorant, It can also enumerate: C.I. pigment black 1 and same 7.Laser labeling layer 11 can contain a kind of colorant, can also contain two or more Colorant.In addition, the content of the colorant in Laser labeling layer 11 is preferably 0.5 weight % or more, more preferably 1 weight % Above, 2 weight % or more are more preferably.It is preferably 10 weight % or less, more preferably 8 weight % or less with content, more preferable For 5 weight % or less.These compositions of related colorant content, mark for using laser labelling in Laser labeling layer 11 The high identification of information realization in terms of be preferred.
Laser labeling layer 11 can also contain one or more kinds of other ingredients as needed.As this it is other at Point, such as can enumerate: fire retardant, silane coupling agent and ion capturing agent.It as fire retardant, such as can enumerate: three oxidations Antimony, antimony pentaoxide and brominated epoxy resin.It as silane coupling agent, such as can enumerate: β-(3,4- epoxycyclohexyl) ethyl Trimethoxy silane, γ-glycidoxypropyltrime,hoxysilane and γ-glycidoxypropyl diethoxy silicon Alkane.As ion capturing agent, such as can enumerate: hydrotalcite, bismuth hydroxide, oxidizing aqueous antimony (such as East Asia synthesis strain formula " IXE-300 " of commercial firm), basic zirconium phosphate (such as " IXE-100 " of Toagosei Co., Ltd), the magnesium silicate of specific structure (such as " KYOWAAD 600 " of Kyowa Chemical Industry Co., Ltd) and alumina silicate (such as Kyowa Chemical Industry Co., Ltd " KYOWAAD 700 " of system).The compound that complex compound can be formed between metal ion also is used as ion capturing agent.Make It for such compound, such as can enumerate: three azole compounds, four azole compounds and bipyridyl based compound.Wherein, from From the perspective of the stability of the complex compound formed between metal ion, preferably three azole compounds.As such three Azole compounds, such as can enumerate: 1,2,3- benzotriazole, 1- { bis- (2- ethylhexyl) amino methyls of N, N- } benzo three Azoles, carboxyl benzotriazole, 2- (2- hydroxy-5-methyl base phenyl) benzotriazole, 2- (2- hydroxyl -3,5- di-t-butyl phenyl) -5- Chlorobenzotriazole, 2- (2- hydroxyl -3- tert-butyl -5- aminomethyl phenyl) -5- chlorobenzotriazole, 2- (two-uncle of 2- hydroxyl -3,5- penta Base phenyl) benzotriazole, 2- (2- hydroxyl -5- t-octyl phenyl) benzotriazole, 6- (2 benzotriazole base) -4- t-octyl -6 ' - Tert-butyl -4 '-methyl -2,2 '-methylene bis-phenol, 1- (2,3- dihydroxypropyl) benzotriazole, 1- (1,2- dicarboxyl diethyl Base) benzotriazole, 1- (2- ethylhexylamino methyl) benzotriazole, bis--tertiary pentyl of 2,4- -6- { (H- benzotriazole -1- base) Methyl } phenol, 2- (2- hydroxyl -5- tert-butyl-phenyl) -2H- benzotriazole, octyl -3- [3- tertiary butyl-4-hydroxy -5- (5- Chloro- 2H- benzotriazole -2- base) phenyl] propionic ester, 2- ethylhexyl -3- [3- tertiary butyl-4-hydroxy -5- (the chloro- 2H- benzo of 5- Triazole-2- base) phenyl] propionic ester, 2- (2H- benzotriazole-2- base)-6- (1- methyl-1-phenylethyl)-4- (1,1,3,3- Tetramethyl butyl) phenol, 2- (2H- benzotriazole -2- base) -4-TBP, 2- (2- hydroxy-5-methyl base phenyl) benzo three Azoles, 2- (2- hydroxyl -5- t-octyl phenyl)-benzotriazole, 2- (3- tert-butyl -2- hydroxy-5-methyl base phenyl) -5- chlorobenzene and three Azoles, 2- (2- hydroxyl two-tertiary pentyl of -3,5- phenyl) benzotriazole, -5- chlorobenzene is simultaneously by 2- (2- hydroxyl -3,5- di-t-butyl phenyl) Triazole, 2- [2- hydroxyl -3,5- two (1,1- dimethyl benzyl) phenyl] -2H- benzotriazole, 2,2 '-di-2-ethylhexylphosphine oxides [6- (2H- benzene And triazole -2- base) -4- (1,1,3,3- tetramethyl butyl) phenol], 2- [bis- (bis (alpha, alpha-dimethylbenzyl) base) benzene of 2- hydroxyl -3,5- Base] -2H- benzotriazole and methyl -3- [3- (2H- benzotriazole -2- base) -5- tert-butyl-hydroxy phenyl] propionic ester.Separately Outside, hydroxy-containing compounds as defined in chinol compound, hydroxy-anthraquione compound, polyphenol compound etc. also are used as ion-catching Agent.It as such hydroxy-containing compounds, can specifically enumerate: 1,2- benzenediol, alizarin, anthrarufin, tannin, galla turcica Acid, gallicin and pyrogallol.
Wafer fixing layer 12 in film 10 can have comprising thermosetting resin and thermoplastic resin as resin component Composition, can also have comprising generating the thermoplastic resin of heat-curable functional group being bonded with that can react with curing agent Composition.
There is the thermosetting resin when composition comprising thermosetting resin and thermoplastic resin as wafer fixing layer 12, Such as it can enumerate: epoxy resin, phenolic resin, amino resins, unsaturated polyester resin, polyurethane resin, organic siliconresin And thermoset polyimide resin.Wafer fixing layer 12 can contain a kind of thermosetting resin, can also contain two or more Thermosetting resin.From the half of protected object being originated from film 10, being protected as the back protection film formed as described later The poor tendency of the ionic impurity of the corrosion of conductor chip etc. is set out, crystalline substance of the epoxy resin preferably as film 10 Thermosetting resin in circle fixing layer 12.
As the epoxy resin in wafer fixing layer 12, such as can enumerate as Laser labeling layer 11 with comprising thermosetting The above-mentioned substance of the epoxy resin of the thermosetting resin when composition of property resin and thermoplastic resin.Phenol novolak type ring Oxygen resin, o-cresol phenolic epoxy varnish, biphenyl type epoxy resin, trihydroxy benzene methylmethane type epoxy resin and four benzene Base ethane type epoxy resin is excellent from the aspect of rich in the reactivity and excellent heat resistance with the phenolic resin as curing agent It is elected to be as the epoxy resin in wafer fixing layer 12.
As the phenolic resin that the curing agent that can be used as the epoxy resin in wafer fixing layer 12 plays a role, such as can arrange Enumerate the above-mentioned substance of the phenolic resin of the curing agent as the epoxy resin in Laser labeling layer 11.For wafer fixing layer 12, as the curing agent of epoxy resin, a kind of phenolic resin can be contained, two or more phenolic resin can also be contained.
When wafer fixing layer 12 is containing epoxy resin and as the phenolic resin of its curing agent, relative in epoxy resin 1 equivalent of epoxy group, the hydroxyl in phenolic resin be preferably 0.5~2.0 equivalent, more preferably 0.8~1.2 equivalent ratio match Mixed two resins.It is this be formed in make wafer fixing layer 12 solidify when, keep the curing reaction of the epoxy resin and phenolic resin abundant Carry out aspect preferably.
From the viewpoint of solidifying wafer fixing layer 12 suitably in this way, thermosetting resin in wafer fixing layer 12 Content ratio is preferably 5~60 mass %, more preferably 10~50 mass %.
Thermoplastic resin in wafer fixing layer 12 for example undertakes binder function.As wafer fixing layer 12 have comprising The thermoplastic resin when composition of thermosetting resin and thermoplastic resin, such as can enumerate and have as Laser labeling layer 11 The above-mentioned substance of thermoplastic resin when composition comprising thermosetting resin and thermoplastic resin.Wafer fixing layer 12 can contain A kind of thermoplastic resin can also contain two or more thermoplastic resins.In terms of few and high heat resistance from ionic impurity The thermoplastic resin being considered as in wafer fixing layer 12, preferably acrylic resin.
Acrylic resin when wafer fixing layer 12 contains acrylic resin as thermoplastic resin is preferably with matter The monomeric unit that amount ratio meter is originated from (methyl) acrylate includes most.As being used to form such acrylic resin (methyl) acrylate of monomeric unit, can be used for example and contain acrylic resin as thermoplastic as Laser labeling layer 11 Property resin when the acrylic resin composition monomer above-mentioned (methyl) acrylate.As third in wafer fixing layer 12 The composition monomer of olefin(e) acid resinoid can be used a kind of (methyl) acrylate, can also use two or more (methyl) third Olefin(e) acid ester.In addition, for example for its cohesive force, the modification of heat resistance, which can be with will be with (methyl) third One or more kinds of other monomers of olefin(e) acid ester copolymerization are as composition monomer.As such monomer, can be used for example As can be with other monomers of (methyl) acrylic ester copolymer for the acrylic resin being used to form in Laser labeling layer 11 Above-mentioned substance.
Acrylic resin contained in wafer fixing layer 12 is preferably conveniently selected from butyl acrylate, acrylic acid second The copolymer of monomer in ester, acrylonitrile, acrylic acid, 2-EHA and glycidyl acrylate.This composition The cementability relative to workpiece is taken into account in the film 10 as back-protective film and is being cut off with aftermentioned in extension process The aspect of good cutting off property is preferred.
When wafer fixing layer 12 is had comprising composition with the thermoplastic resin of heat-curable functional group, as the thermoplasticity The acrylic resin containing heat-curable functional group can be used for example in resin.It is used to form this and contains heat-curable functional group's Monomeric unit of the acrylic resin of acrylic resin preferably in terms of mass ratio from (methyl) acrylate includes most It is more.As such (methyl) acrylate, can be used for example and as acrylic compounds contained in Laser labeling layer 11 Same (methyl) acrylate of above-mentioned substance of the composition monomer of resin.On the other hand, as being used to form containing thermosetting property The heat-curable functional group of the acrylic resin of functional group, such as can enumerate: glycidyl, carboxyl, hydroxyl and isocyanic acid Ester group.Wherein it is possible to properly use glycidyl and carboxyl.In addition, according to the acrylic compounds containing heat-curable functional group The type of heat-curable functional group in resin selects the curing agent that can be reacted.Propylene containing heat-curable functional group When the heat-curable functional group of acid resin is glycidyl, as curing agent, it can be used and solidify with as epoxy resin The same phenolic resin of the above-mentioned substance of agent.
The composition for being used to form wafer fixing layer 12 does not preferably contain thermal curing catalyst.It is fixed being used to form wafer When being compounded thermal curing catalyst in the composition of layer 12, as the thermal curing catalyst, it can be used for example as can be in laser The mark layer formation above-mentioned substance for the thermal curing catalyst being compounded in composition.
Wafer fixing layer 12 can contain filler.It is stretched from the elasticity modulus of adjustment wafer fixing layer 12, yield strength, fracture In terms of the physical property such as long rate, filler preferably is compounded into wafer fixing layer 12.As the filler in wafer fixing layer 12, such as can arrange Enumerate the above-mentioned substance as the filler in Laser labeling layer 11.Wafer fixing layer 12 can contain a kind of filler, can also contain There are two types of above fillers.The filler can also have the various shapes such as spherical, needle-shaped, flakey.Wafer fixing layer 12 contains The average grain diameter of filler when filler is preferably 0.005~10 μm, more preferably 0.05~1 μm.For being averaged for the filler Partial size is 10 μm or less such compositions, obtains sufficient filler additive effect in wafer fixing layer 12 and ensures the side of heat resistance Face is suitable.In addition, the content of filler when wafer fixing layer 12 is containing filler be preferably 10 mass % or more, more preferably For 15 mass % or more, more preferably 20 mass % or more.It is preferably 50 mass % or less, more preferably 47 mass % with content Below, 45 mass % or less are more preferably.
Wafer fixing layer 12 can also contain colorant.As the colorant in wafer fixing layer 12, for example, can enumerate Above-mentioned substance as the colorant in Laser labeling layer 11.In the utilization laser for ensuring 11 side of Laser labeling layer in film 10 It marks the good contrast between the marking position carried out and position in addition to this and can realize that the height of the marking information is distinguished The aspect for the property known, wafer fixing layer 12 preferably comprise black system colorant.Wafer fixing layer 12 can contain a kind of colorant, also Two or more colorants can be contained.In addition, the content of the colorant in wafer fixing layer 12 be preferably 0.5 weight % with Upper, more preferably 1 weight % or more, more preferably 2 weight % or more.It is preferably 10 weight % or less, more preferably 8 with content Weight % or less, more preferably 5 weight % or less.These of related colorant content are formed in for being carried out by laser labelling The above-mentioned good identification of marking information realization in terms of be preferred.
Wafer fixing layer 12 can also contain one or more kinds of other ingredients as needed.As this it is other at Point, such as can enumerate and be related to above-mentioned specific fire retardant, silane coupling agent and the ion capturing agent of Laser labeling layer 11.
The thickness of film 10 with the stepped construction comprising Laser labeling layer 11 and wafer fixing layer 12 be preferably 8 μm with Above, more preferably 10 μm or more and preferably 20 μm or less, more preferably 15 μm or less.In addition, Laser labeling layer 11 the (the 1st Layer) thickness relative to the ratio of the thickness of wafer fixing layer 12 (the 2nd layer) be preferably 0.2~4, more preferably 0.2~1.5, More preferably 0.3~1.3, it is more preferably 0.6~1.1.
For above such film 10 (piece of the cementability as back-protective film), the Film test of width 2mm Piece (cementability piece test film) initial chuck spacing 16mm, -15 DEG C and under conditions of load is increased speed 1.2N/ minutes into Breaking strength in capable tension test is 1.2N or less, preferably 1.1N or less, more preferably 1N or less.At the same time, thin Elongation at break (the length of stretched portion when fracture ratio relative to length stretching before of the film 10 in same stretch test Example) it is 1.2% or less, preferably 1.1% or less, more preferably 1% or less.For these breaking strengths and elongation at break, It can be in the tension test carried out using TMA testing machine (trade name " TMA Q400 ", TA INSTRUMENT Co., Ltd. system) Middle measurement.In the measurement, is cut out from film 10 and the test film for being set to service-test machine passes through 5 minutes at -15 DEG C After holding, the operating mode of the testing machine is set as stretch mode, as described above initial chuck spacing from 16mm, -15 DEG C and Load carries out tension test under conditions of increasing speed 1.2N/ minutes.The adjustment of the breaking strength of film 10 and elongation at break Adjustment can pass through the composition monomer composition of the thermoplastic resins such as acrylic resin contained in each layer in film 10 Adjustment, adjustment of thickness of each layer in film 10 etc. carry out.
The substrate 21 of cutting belt 20 in dicing tape integrated cementability piece X is in cutting belt 20 or dicing tape integrated viscous The element to play a role in connecing property piece X as supporter.Substrate 21 is, for example, plastic basis material, can be suitable for as the plastic basis material Ground uses plastic film.It as the constituent material of plastic basis material, such as can enumerate: polyolefin, polyester, polyurethane, poly- carbonic acid Ester, polyimides, polyetherimide, polyamide, fully aromatic polyamide, polyvinyl chloride, Vingon, gathers polyether-ether-ketone Aralkyl sulfid, aromatic polyamides, fluororesin, cellulose-based resin and organic siliconresin.As polyolefin, such as can enumerate: It is low density polyethylene (LDPE), straight-chain low density polyethylene (LDPE), medium density polyethylene, high density polyethylene (HDPE), ultra-low density polyethylene, random Copolymer polypropylene, block copolymerization polypropylene, homopolypropylene, polybutene, polymethylpentene, vinyl-vinyl acetate copolymer, Ionomer resin, ethylene-(methyl) acrylic copolymer, ethylene-(methyl) acrylate copolymer, ethylene-butene copolymer And ethylene-hexene co-polymers.It as polyester, such as can enumerate: polyethylene terephthalate, poly- naphthalenedicarboxylic acid ethylene glycol Ester and polybutylene terephthalate (PBT).Substrate 21 can be made of a kind of material, can also be made of two or more materials. Substrate 21 can have single layer structure, can also have multilayered structure.Adhesive phase 22 on substrate 21 is ultraviolet as described below When line curability, substrate 21 preferably has ultraviolet light permeability.It, can be thin for tensionless winkler foundation when substrate 21 is made of plastic film Film, can be monodirectional tension film, can also be biaxially oriented film.Preferred substrates 21 are polyvinyl chloride system in present embodiment Substrate or vinyl-vinyl acetate copolymer substrate.
When using dicing tape integrated cementability piece X, for example, cutting belt 20 or substrate 21 are made by local heating In the case where contraction, substrate 21 preferably has heat-shrinkable.In addition, when substrate 21 is made of plastic film, for cutting belt 20 or in terms of substrate 21 realizes isotropic heat-shrinkable, the preferably bidirectional oriented film of substrate 21.Cutting belt 20 or substrate 21 percent thermal shrinkages by heat treatment test that carry out under conditions of 100 DEG C of heating temperature and heating treatment time 60 seconds are excellent It is selected as 2~30%, more preferably 2~25%, more preferably 3~20%, more preferably 5~20%.The percent thermal shrinkage refers to institute The percent thermal shrinkage of at least one of the percent thermal shrinkage in the direction MD of meaning and the percent thermal shrinkage in the so-called direction TD.
The surface of 22 side of adhesive phase in substrate 21 can be implemented for improving and the adaptation of adhesive phase 22 Physical treatment, chemical treatment or primary coat processing.As physical treatment, such as can enumerate: sided corona treatment, corona treatment, Blasting treatment, ozone exposure processing, fire exposure processing, high-voltage electric shock exposure treatment and the processing of ionizing irradiation line.As change The property learned processing, such as chromic acid processing can be enumerated.
From ensuring substrate 21 for playing as the supporter in cutting belt 20 or even dicing tape integrated cementability piece X From the perspective of the intensity of function is such, the thickness of substrate 21 is preferably 40 μm or more, more preferably 50 μm or more, is more preferably 60 μm or more.In addition, realizing that viewpoint as the flexibility of appropriateness goes out from cutting belt 20 or dicing tape integrated cementability piece X Hair, the thickness of substrate 21 are preferably 200 μm or less, more preferably 180 μm or less, more preferably 150 μm or less.
The adhesive phase 22 of cutting belt 20 contains adhesive.The adhesive, which can be, is using dicing tape integrated cementability During piece X can by from external action make consciously bonding force reduce adhesive (bonding force can reduce type Adhesive), it is also possible to make bonding force almost from external effect during using dicing tape integrated cementability piece X Or the adhesive (the non-reduced type adhesive of bonding force) not reduced completely.For using bonding force that can reduce type adhesive or making The case where non-reduced type adhesive of bonding force is as adhesive in adhesive phase 22 is used, it can be dicing tape integrated according to using Cementability piece X carries out method, condition of singualtion of semiconductor chip etc. of singualtion, dicing tape integrated cementability piece X Usage mode is suitable for selection to carry out.
When using bonding force that can reduce type adhesive as the adhesive in adhesive phase 22, using dicing tape integrated During cementability piece X, there can be relatively high bonding force is shown using adhesive phase 22 state and display with distinguishing The state of power relatively low-adhesive out.For example, when using dicing tape integrated cementability piece X in aftermentioned extension process, in order to press down System prevents the high adhesion state for floating, removing and utilizing adhesive phase 22 in 10 autoadhesion oxidant layer 22 of film, another party Face, thereafter to picking up the aftermentioned of the semiconductor chip with film from the cutting belt 20 of dicing tape integrated cementability piece X In pickup process, adhesive phase 22 can use in order to be easy semiconductor chip of the pickup with film from adhesive phase 22 Power state low-adhesive.
Type adhesive can be reduced as such bonding force, such as can be enumerated: using dicing tape integrated cementability It can be bonded by the cured adhesive of irradiation with radiation (radiation curing adhesive), thermal expansion type during piece X Agent etc..In the adhesive phase 22 of present embodiment, a kind of bonding force, which can be used, can reduce type adhesive, can also use two kinds Above bonding force can reduce type adhesive.Furthermore it is possible to which can reduce type adhesive by bonding force forms the whole of adhesive phase 22 Body can also can reduce a part that type adhesive forms adhesive phase 22 by bonding force.For example, adhesive phase 22 has single layer When structure, the entirety that type adhesive forms adhesive phase 22 can be reduced by bonding force, type can also be reduced by bonding force Adhesive formed adhesive phase 22 in predetermined portion (for example, middle section of the attaching subject area as workpiece), by gluing Non-reduced type adhesive forms other positions (for example, attaching subject area as ring frame, centrally located region outer with joint efforts The region of side).In addition, can reduce type adhesive when adhesive phase 22 has multilayered structure by bonding force and form multilayer knot All layers of structure can also can be reduced a part of layer that type adhesive is formed in multilayered structure by bonding force.
As the radiation curing adhesive for adhesive phase 22, such as can enumerate through electron ray, ultraviolet The irradiation of line, alpha ray, β ray, gamma-rays or X-ray carries out the adhesive of cured type, can be particularly suitablely using logical Cross the adhesive (ultraviolet-curing adhesive) that ultraviolet light irradiation carries out cured type.
As the radiation curing adhesive for adhesive phase 22, such as can enumerate containing viscous as acrylic compounds The base polymers such as the acrylic polymer of mixture；And the radiation of the functional groups such as carbon-to-carbon double bond with radiation polymerism The radiation curing adhesive of the monomer component of line polymerism, the addition type of oligomer ingredient.
Monomeric unit of the above-mentioned acrylic polymer preferably in terms of mass ratio from (methyl) acrylate includes most It is more.For being used to form (methyl) acrylate of the monomeric unit of acrylic polymer, i.e. as acrylic polymer Composition monomer (methyl) acrylate, such as can enumerate: (methyl) alkyl acrylate, (methyl) acrylate base Ester and (methyl) benzyl acrylate, more specifically, the propylene that can be enumerated and be related in the Laser labeling layer 11 of film 10 Same (methyl) acrylate of the above-mentioned substance of acid resin.As the composition monomer of acrylic polymer, can be used A kind of (methyl) acrylate, can also use two or more (methyl) acrylate.Structure as acrylic polymer At monomer, 2-EHA and lauryl acrylate is preferably listed out.In addition, suitably being shown using adhesive phase 22 The aspect of the fundamental characteristics such as the adhesiveness dependent on (methyl) acrylate is shown, the whole of acrylic polymer constitute monomer In (methyl) acrylate ratio be preferably 40 mass % or more, more preferably 60 mass % or more.
Such as its cohesive force, the modification of heat resistance, acrylic polymer can also be comprising be originated from can be with (methyl) The monomeric unit of one or more kinds of other monomers of acrylic ester copolymer.As such monomer, such as can enumerate: Carboxyl group-containing monomer, hydroxyl monomer, contains epoxy based monomers, monomer containing sulfonic group, phosphorous acid-based monomers, acryloyl at anhydride monomers More specifically amine and acrylonitrile can be enumerated as can be with the acrylic acid in the Laser labeling layer 11 for being used to form film 10 The above-mentioned substance of other monomers of (methyl) acrylic ester copolymer of resinoid.
It, can also be comprising being originated from energy in order to form cross-linked structure in its polymer backbone for acrylic polymer The monomeric unit for the multi-functional monomer being copolymerized with monomer components such as (methyl) acrylate.As such multi-functional list Body, such as can enumerate: hexylene glycol two (methyl) acrylate, (poly-) ethylene glycol two (methyl) acrylate, (poly-) propylene glycol Two (methyl) acrylate, neopentyl glycol two (methyl) acrylate, pentaerythrite two (methyl) acrylate, trihydroxy methyl third Alkane three (methyl) acrylate, pentaerythrite three (methyl) acrylate, dipentaerythritol six (methyl) acrylate, poly- (first Base) glycidyl acrylate, polyester (methyl) acrylate and carbamate (methyl) acrylate." (methyl) propylene Acid esters " refers to " acrylate " and/or " methacrylate ".As the composition monomer of acrylic polymer, can be used A kind of multi-functional monomer can also use two or more multi-functional monomers.It is suitably shown using adhesive phase 22 Aspect dependent on the fundamental characteristics such as adhesiveness of (methyl) acrylate out, in the composition monomer entirety of acrylic polymer Multi-functional monomer ratio be preferably 40 mass % or less, more preferably 30 mass % or less.
Acrylic polymer can be by obtaining the starting monomer polymerization for being used to form it.As polymerization, Such as it can enumerate: polymerisation in solution, emulsion polymerization, bulk polymerization and suspension polymerisation.From use cutting belt 20 or cutting belt one From the perspective of the spatter property of height in the manufacturing method for semiconductor device of type cementability piece X, cutting belt 20 or cutting belt one The low molecular weight substance in adhesive phase 22 in figure cementability piece X is preferably few, the number-average molecular weight of acrylic polymer Preferably 100,000 or more, 200,000~3,000,000 are more preferably.
In order to improve the number-average molecular weight of the base polymers such as acrylic polymer, adhesive phase 22 or it is used to form it Adhesive can also for example contain external crosslinker.As for being reacted and shape with base polymers such as acrylic polymers It at the external crosslinker of cross-linked structure, can enumerate: polyisocyanate compound, epoxide, polyol compound, azepine Cyclopropane compound and melamine series crosslinking agent.Adhesive phase 22 or the external crosslinker being used to form in its adhesive Content is relative to 100 mass parts of base polymer, preferably 5 below the mass, more preferably 0.1~5 mass parts.
As being used to form the above-mentioned radiation polymerizable monomer ingredient of radiation curing adhesive, such as can enumerate Out: carbamate (methyl) acrylate, trimethylolpropane tris (methyl) acrylate, pentaerythrite three (methyl) propylene Acid esters, pentaerythrite four (methyl) acrylate, dipentaerythritol monohydroxy five (methyl) acrylate, dipentaerythritol six (methyl) acrylate and 1,4- butanediol two (methyl) acrylate.As being used to form the upper of radiation curing adhesive Radiation polyreactive oligomers ingredient is stated, for example, polyurethane series, polyether system, Polyester, polycarbonate-based, poly- fourth can be enumerated The substance of the various oligomer such as diene series, molecular weight 100~30000 or so is appropriate.In radiation curing adhesive The monomer component of radiation polymerism, the total content of oligomer ingredient can be suitable for reducing to be formed by the viscous of adhesive phase 22 It is determined in the range of resultant force, relative to 100 mass parts of the base polymers such as acrylic polymer, preferably 5~500 mass Part, more preferably 40~150 mass parts.In addition, as addition type radiation curing adhesive, such as Japan can also be used Adhesive disclosed in tekiaki 60-196956 bulletin.
It can enumerate as the radiation curing adhesive for adhesive phase 22, such as also containing in polymer side In chain, main polymer chain, main polymer chain end have radiation polymerism the functional groups such as carbon-to-carbon double bond base polymer Inherent type radiation curing adhesive.Such inherence type radiation curing adhesive is inhibiting by being formed by bonding It is suitable in terms of the non-deliberately property ongoing change of adhesion characteristic caused by the movement of low molecular weight compositions in oxidant layer 22.
As base polymer contained in inherent type radiation curing adhesive, preferably with acrylic polymer Polymer as basic framework.As the acrylic polymer for forming such basic framework, above-mentioned propylene can be used Acids polymers.As the method for the carbon-to-carbon double bond for importing radiation polymerism into acrylic polymer, such as can enumerate Following method out: the starting monomer copolymerization comprising the monomer with defined functional group (the 1st functional group) is made to obtain acrylic acid After quasi polymer, make with can react between the 1st functional group and the defined functional group (the 2nd functional group) that is bonded and The compound of radiation polymerism carbon-to-carbon double bond is to maintain the state and acrylic polymer of the radiation polymerism of carbon-to-carbon double bond It closes object and condensation reaction or addition reaction occurs.
It as the combination of the 1st functional group and the 2nd functional group, such as can enumerate: carboxyl and epoxy group, epoxy group and carboxylic Base, carboxyl and '-aziridino, '-aziridino and carboxyl, hydroxyl and isocyanate group, isocyanate group and hydroxyl.These combinations In, from the viewpoint of reactive tracing easness, the preferred group of the combination of hydroxyl and isocyanate group, isocyanate group and hydroxyl It closes.In addition, have the polymer technology difficulty of isocyanate group with high reactivity higher due to making, from making or obtain From the perspective of the easness for obtaining acrylic polymer, above-mentioned 1st functional group of more preferable acrylic polymer side is hydroxyl The case where base and above-mentioned 2nd functional group are isocyanate group.At this point, as radiation polymerism carbon-to-carbon double bond and conduct is had both The isocyanide containing unsaturated functional group of the isocyanate compound of the isocyanate group of 2nd functional group, i.e. radiation polymerism Ester compound, such as can enumerate: methacryloyl isocyanate, 2- methacryloxyethyl isocyanates (MOI) and isopropenyl-bis (alpha, alpha-dimethylbenzyl) based isocyanate.
Radiation curing adhesive for adhesive phase 22 preferably comprises Photoepolymerizationinitiater initiater.Cause as photopolymerization Agent, such as can enumerate: α -one alcohol based compound, acetophenone based compound, benzoin ether based compound, ketal based compound, Aromatic sulfonyl based compound, photolytic activity oxime compound, benzophenone based compound, thioxanthones based compound, camphorquinone, Halogenated ketone, acylphosphine oxide and acyl phosphonate.It as α -one alcohol based compound, such as can enumerate: 4- (2- '-hydroxyethoxy Base) phenyl (2- hydroxyl -2- propyl) ketone, Alpha-hydroxy-α, α '-dimethyl acetophenone, 2- methyl -2- hydroxypropiophenonepreparation and 1- hydroxyl Cyclohexyl-phenyl ketone.It as acetophenone based compound, such as can enumerate: methoxyacetophenone, 2,2- dimethoxy -1,2- bis- Diphenylphosphino ethane-1- ketone, 2,2- diethoxy acetophenone and 2- methyl-1-[4- (methyl mercapto)-phenyl]-2- morpholino propane-1. It as benzoin ether based compound, such as can enumerate: benzoin ethyl ether, benzoin iso-propylether and anisoin methyl ether.As Ketal based compound, such as can enumerate: benzyl dimethyl ketal.As aromatic sulfonyl based compound, such as can enumerate Out: 2- naphthalene sulfonyl chloride.It as photolytic activity oxime compound, such as can enumerate: 1- phenyl -1,2- propanedione -2- (O- ethyoxyl Carbonyl) oxime.It as benzophenone based compound, such as can enumerate: benzophenone, benzoyl benzoic acid and 3,3 '-diformazans Base -4- methoxy benzophenone.It as thioxanthones based compound, such as can enumerate: thioxanthones, 2-chlorothioxanthone, 2- methyl Thioxanthones, 2,4- dimethyl thioxanthone, isopropyl thioxanthone, bis- clopenthixal ketone of 2,4-, 2,4- diethyl thioxanthone and 2,4- bis- Isopropyl thioxanthone.Relative to 100 mass parts of the base polymers such as acrylic polymer, the radiation in adhesive phase 22 is solid The content of Photoepolymerizationinitiater initiater in the property changed adhesive is, for example, 0.05~20 mass parts.
Above-mentioned thermal expansion type adhesive for adhesive phase 22 is containing the ingredient by heating foaming, expansion The adhesive of (foaming agent, heat-expandable microsphere etc.).As foaming agent, various inorganic system's foaming agents and organic system hair can be enumerated Infusion.As heat-expandable microsphere, such as it can enumerate to be sealed in shell and by heating easily aerify and expand The microballoon of the composition of substance.It as inorganic system's foaming agent, such as can enumerate: ammonium carbonate, ammonium hydrogen carbonate, sodium bicarbonate, nitrous Sour ammonium, sodium borohydride and nitrine class.It as organic system foaming agent, such as can enumerate: trichlorofluoromethane, dichloro list fluoromethane The azo compounds, tolysulfonyl such as equal chlorofluorinations alkane, azodiisobutyronitrile, azodicarbonamide, Barium azodicarboxylate The hydrazines system such as hydrazine, diphenyl sulfone -3,3 '-disulfonyl hydrazide, 4,4 '-oxos bis- (benzene sulfonyl hydrazides), allyl bis- (sulfonyl hydrazides) The semicarbazides based compounds, morpholinyl -1 5- such as object, p-toluenesulfonyl semicarbazides, 4,4 '-oxos bis- (benzenesulfonamido- ureas) are closed, Three azole compounds such as 2,3,4- thiatriazole and N, N '-dinitrosopentamethylene tetramine, N, N '-dimethyl-N, N '-two The N- nitroso based compound such as nitroso terephthalamide.As be used to form heat-expandable microsphere as described above, it is logical It crosses heating and is easy the substance for aerifying and expanding, such as can enumerate: iso-butane, propane and pentane.By using coacervation, Interfacial polymerization etc. will be enclosed in shell forming material by heating the easy substance for aerifying and expanding, so as to make heat Dilatancy microballoon.As shell forming material, can be used show hot melt property substance, can by enclose substance thermal expansion Effect and the substance that ruptures.It as such substance, such as can enumerate: vinylidene chloride-acrylonitrile copolymer, polyethylene Alcohol, polyvinyl butyral, polymethyl methacrylate, polyacrylonitrile, Vingon and polysulfones.
As the non-reduced type adhesive of above-mentioned bonding force, for example, about bonding force can reduce type adhesive can enumerate it is pre- Irradiation with radiation first is carried out to above-mentioned radiation curing adhesive and makes the adhesive of its cured form, so-called pressure sensitive Adhesive etc..Radiation curing adhesive is different according to the type and content that it contains component of polymer, even if via radiation Line solidifies and makes also show the adhesiveness due to the component of polymer in the case where bonding force reduction, can be with defined Usage mode, which is played, keeps the available bonding force of adherend for bonding.It can be used in the adhesive phase 22 of present embodiment A kind of non-reduced type adhesive of bonding force can also use the two or more non-reduced type adhesives of bonding force.Furthermore it is possible to by The non-reduced type adhesive of bonding force forms the entirety of adhesive phase 22, can also form bonding by the non-reduced type adhesive of bonding force A part of oxidant layer 22.For example, can be formed by the non-reduced type adhesive of bonding force viscous when adhesive phase 22 has single layer structure The entirety of mixture layer 22, as described above, the specified part in adhesive phase 22 can also be formed by bonding force non-reduced type adhesive Position (for example, the region in attaching subject area as ring frame, attaching subject area positioned at wafer outside), by bonding force Type adhesive can be reduced and form other positions (for example, middle section of the attaching subject area as wafer).In addition, adhesive When layer 22 has multilayered structure, all layers for constituting multilayered structure can be formed by the non-reduced type adhesive of bonding force, it can be with A part of layer in multilayered structure is formed by the non-reduced type adhesive of bonding force.
On the other hand, as the Pressuresensitive Adhesive for adhesive phase 22, can be used for example with acrylic Acrylic adhesives, elastomeric adhesive of the object as basic polymer.Adhesive phase 22 is made containing acrylic adhesives When for Pressuresensitive Adhesive, the acrylic polymer of the base polymer as the acrylic adhesives, preferably with quality The monomeric unit that ratio meter is originated from (methyl) acrylate includes most.As such acrylic polymer, such as can be with It enumerates and is related to the above-mentioned acrylic polymer of radiation curing adhesive.
Adhesive phase 22 or be used to form its adhesive other than above-mentioned each ingredient can also containing crosslinking accelerator, Colorants such as tackifier, anti-aging agent, pigment, dyestuff etc..Colorant can also be the change coloured by irradiation with radiation Close object.As such compound, such as leuco dye can be enumerated.
The thickness of adhesive phase 22 is preferably 2~20 μm, more preferably 3~17 μm, more preferably 5~15 μm.This structure Make the adhesive phase 22 before and after radiation curing at for example obtaining when adhesive phase 22 includes radiation curing adhesive To being suitable in terms of the bonding dynamic balance of film 10.
It can for example be manufactured as follows with above such dicing tape integrated cementability piece X constituted.
Production for the film 10 in dicing tape integrated cementability piece X, firstly, being fabricated separately to form Laser labeling layer 11 resin film (the 1st resin film) and the resin film (the 2nd resin film) for forming wafer fixing layer 12.1st resin is thin Film can make in the following way: the resin combination of Laser labeling layer formation is coated on defined isolation film simultaneously shape After resin composition layer, by being heated and being made it dry to the composition layer and solidified, to make.As isolation Film, such as can enumerate: polyethylene terephthalate (PET) film, polyethylene film, polypropylene film and fluorine system Remover, plastic film, stationery that surface coating has been carried out using removers such as chain alkyl acrylate series stripping agents etc..Make It for the coating method of resin combination, such as can enumerate: roll coating, silk screen coating and rotogravure application.Making, the 1st resin is thin When film, heating temperature is, for example, 90~160 DEG C, and heating time is, for example, 2~4 minutes.On the other hand, the 2nd resin film can be with It makes in the following way: the resin combination of wafer fixing layer formation being coated on defined isolation film and forms resin After composition layer, by the way that the composition layer is heated and made it dry, to make.When making 2 resin film, add Hot temperature is, for example, 90~150 DEG C, and heating time is, for example, 1~2 minute.So, it is possible by respectively with isolation film in the form of Make above-mentioned 1st and the 2nd resin film.Then, it is bonded the exposed surface of these the 1st and the 2nd resin films each other.Thus it makes The above-mentioned film 10 of stepped construction with Laser labeling layer 11 and wafer fixing layer 12.
For the cutting belt 20 of dicing tape integrated cementability piece X, can be bonded by being arranged on the substrate 21 of preparation Oxidant layer 22 makes.Such as the substrate 21 of resin can use calendering film method, the tape casting in organic solvent, closed The film-forming methods such as inflation extrusion molding, T mould extrusion molding, coetrusion, dry lamination method in system make.After film Film or substrate 21 can implement defined surface treatment as needed.Formation for adhesive phase 22, for example, viscous in preparation After the adhesive composition of mixture layer formation, firstly, the composition is coated on substrate 21 or on defined isolation film simultaneously Form adhesive composition layer.As the coating method of adhesive composition, such as can enumerate: roller coating, silk screen coating and it is recessed Version coating.Then, adhesive composition layer is handed over by heating and making it dry as needed in addition, causing as needed Connection reaction.Heating temperature is, for example, 80~150 DEG C, and heating time is, for example, 0.5~5 minute.Adhesive is formed on isolation film In the case where layer 22, it will be fitted on substrate 21 with the adhesive phase 22 of the isolation film, then remove isolation film.It makes as a result, Make the above-mentioned cutting belt 20 with the stepped construction of substrate 21 and adhesive phase 22.
11 side of Laser labeling layer of film 10 is then fitted in and is cut by the production for dicing tape integrated cementability piece X Cut 22 side of adhesive phase of band 20.Binding temperature is, for example, 30~50 DEG C, and laminate pressure (line pressure) is, for example, 0.1~20kgf/ cm.It, can be before the fitting to adhesive phase when adhesive phase 22 includes radiation curing adhesive as described above 22 irradiation ultraviolet light israds can also irradiate the radiation such as ultraviolet light to adhesive phase 22 from 21 side of substrate after fitting Line.Alternatively, such irradiation with radiation (situation can also be carried out in the manufacturing process of dicing tape integrated cementability piece X Under, 22 radiation curing of adhesive phase can be made in the use process of dicing tape integrated cementability piece X).Adhesive phase 22 It is, for example, 50~500mJ/cm for making the cured ultraviolet irradiation amount of adhesive phase 22 when for ultraviolet hardening2.Cutting belt The region (irradiation area R) that the irradiation handled is reduced as the bonding force of adhesive phase 22 can be carried out in one-piece type cementability piece X It such as is as shown in Figure 1 the region other than its peripheral part in 10 fit area of film in adhesive phase 22.
Thereby, it is possible to make dicing tape integrated cementability piece X.It, can also be for dicing tape integrated cementability piece X 10 side of film is at least to cover the prominent form isolation film (illustration omitted) of film 10.Compared with the adhesive phase 22 of cutting belt 20 When film 10 is small size and has the region of non-attaching film 10 in adhesive phase 22, such as can also be at least to cover The prominent form isolation film of film 10 and adhesive phase 22.Isolation film is to protect so that film 10, adhesive phase 22 do not reveal Element out is stripped from the film when using dicing tape integrated cementability piece X.
Fig. 2 to Fig. 7 indicates an example of the manufacturing method for semiconductor device using above-mentioned dicing tape integrated cementability piece X Son.
For the manufacturing method for semiconductor device, firstly, as shown in (a) of Fig. 2 and (b) of Fig. 2, in semiconductor crystal wafer W Upper formation modification area 30a.Semiconductor crystal wafer W has the 1st face Wa and the 2nd face Wb.The 1st face in semiconductor crystal wafer W Needed for the side Wa is equipped with various semiconductor elements (illustration omitted) and is formed with the semiconductor element on the 1st face Wa Wire structures etc. (illustration omitted).In the process, semiconductor crystal wafer will be fitted in band T1 with the processing of the wafer of adhesive surface T1a Behind the 1st face side Wa of W, in the state that wafer processing is with semiconductor crystal wafer W is maintained on T1, to semiconductor crystal wafer W, from The laser of preset lines irradiation focus point alignment inside wafer is divided in wafer processing with the opposite side with T1 along it, due to by more Ablation caused by photonic absorption and in semiconductor crystal wafer W formed modification area 30a.Modification area 30a is for making semiconductor Wafer W is separated into the crisp atenuator region of semiconductor core blade unit.It is pre- in segmentation for passing through laser irradiation in semiconductor crystal wafer The method that modification area 30a is formed on alignment, such as had been described in detail in Japanese Unexamined Patent Publication 2002-192370 bulletin, this implementation Laser irradiation condition in mode for example suitably adjusts in the range of the following conditions.
(laser irradiation condition)
(A) laser
(C) it is placed with movement speed 280mm/ seconds or less of the mounting table of semiconductor substrate
Then, wafer process with in the state of maintaining semiconductor crystal wafer W on T1 by from the grinding on the 2nd face Wb Processing carries out thinning until for defined thickness to semiconductor crystal wafer W, and as a result, as shown in (c) of Fig. 2, being formed can monolithic Turn to the semiconductor crystal wafer 30A (wafer thinning process) of multiple semiconductor chips 31.In semiconductor crystal wafer 30A, modification area 30a Expose in the 2nd face side Wb.
Then, film 10 or its wafer fixing layer as shown in (a) of Fig. 3, relative to dicing tape integrated cementability piece X 12 fittings are held in semiconductor crystal wafer 30A of the wafer processing with T1.Then, as shown in (b) of Fig. 3, from semiconductor crystal wafer 30A Upper removing wafer processing band T1.
Then, for example, for the film 10 in dicing tape integrated cementability piece X Laser labeling layer 11, from cutting belt 20 21 side of substrate irradiation laser carry out laser labelling (laser labelling process).It, can be to later by monolithic by the laser labelling The each semiconductor element for turning to semiconductor chip assigns the various information such as text information, graphical information.In the process, at one In laser marking process, laser labelling can be effectively performed together to multiple semiconductor elements in semiconductor crystal wafer 30A.Make For laser used in the process, such as gas laser and Solid State Laser can be enumerated.As gas laser, such as can enumerate Out: carbon dioxide gas volumetric laser (CO2Laser) and excimer laser.As Solid State Laser, such as Nd:YAG laser can be enumerated.
It, can also generation when adhesive phase 22 in dicing tape integrated cementability piece X is radiation curing adhesive phase For the above-mentioned irradiation with radiation in the manufacturing process of dicing tape integrated cementability piece X, and conformed in semiconductor crystal wafer 30A After film 10, ultraviolet light israds is irradiated to adhesive phase 22 from 21 side of substrate.Exposure is, for example, 50~500mJ/ cm2.The region that the irradiation handled is reduced as the bonding force of adhesive phase 22 can be carried out in dicing tape integrated cementability piece X (irradiation area R shown in FIG. 1) is, for example, the region in addition to peripheral part in 10 fit area of film in adhesive phase 22.
Then, after pasting ring frame 41 on the adhesive phase 22 in dicing tape integrated cementability piece X, such as (a) institute of Fig. 4 Show, the holder 42 of expanding unit is fixed on the dicing tape integrated cementability piece X of semiconductor crystal wafer 30A.
Then, the 1st extension process (cold extension process) under conditions of relative low temperature is carried out as shown in (b) of Fig. 4, While semiconductor crystal wafer 30A is singulated as multiple semiconductor chip 31, the film 10 of dicing tape integrated cementability piece X The film 10 ' of small pieces is cut off into, to obtain the semiconductor chip 31 with film.In the process, expanding unit is had Hollow cylindrical jack-up component 43 cutting belt 20 is connected on the downside of the figure of dicing tape integrated cementability piece X and on It rises, to the cutting belt 20 of the dicing tape integrated cementability piece X for being fitted with semiconductor crystal wafer 30A to include radially and circumferentially The mode stretched on two-dimensional directional is extended.For cutting belt 20, such as generating the tensile stress of 1~100MPa Under the conditions of carry out the extension.Temperature condition in the process is, for example, 0 DEG C or less, preferably -20~-5 DEG C, more preferably -15 ~-5 DEG C, more preferably -15 DEG C.Expansion rate (jacking up the speed that component 43 rises) in the process is, for example, 1~500mm/ Second.In addition, the propagation (jacking up the distance that component 43 rises) in the process is, for example, 50~200mm.Cold expansion in this way It opens up process, the film 10 of dicing tape integrated cementability piece X is cut off into the films 10 ' of small pieces and available with film Semiconductor chip 31.Specifically, fragile modification area 30a forms crackle and produces in semiconductor crystal wafer 30A in the process The raw singualtion to semiconductor chip 31.At the same time, close with the adhesive phase 22 for the cutting belt 20 to be extended in the process In the film 10 of conjunction, inhibit deformation in the closely sealed each region of each semiconductor chip 31 of semiconductor crystal wafer 30A, on the other hand, For the position opposite with the crackle forming part of wafer, in the state of not generating such deformation inhibiting effect, cutting The tensile stress generated with 20 plays a role.As a result, the crackle forming part phase in film 10 between semiconductor chip 31 Pair position cut off.After the process, as shown in (c) of Fig. 4, make to jack up the decline of component 43 and release the expansion in cutting belt 20 Exhibition state.
Then, the 2nd extension process under conditions of relatively-high temperature is carried out as shown in (a) of Fig. 5, is made with film The distance between semiconductor chip 31 (separating distance) expands.In the process, make the hollow cylindrical for extending had device Jack-up component 43 rise again, extend the cutting belt 20 of dicing tape integrated cementability piece X.Temperature in 2nd extension process Degree condition is, for example, 10 DEG C or more, preferably 15~30 DEG C.Expansion rate in 2nd extension process (jacks up what component 43 rose Speed) it is, for example, 0.1~10mm/ seconds.In addition, the propagation in the 2nd extension process is, for example, 3~16mm.Pass through aftermentioned pickup Process, can be suitable for the degree for picking up the semiconductor chip 31 with film from cutting belt 20, in this process make with thin The separating distance of the semiconductor chip 31 of film expands.After the process, as shown in (b) of Fig. 5, make jack up component 43 decline and can Release the extended mode in cutting belt 20.From the semiconductor core with film inhibited in cutting belt 20 after extended mode releases The aspect that the separating distance of piece 31 narrows is set out, it is preferred that before releasing extended mode, to partly leading in cutting belt 20 31 holding area of body chip, which is compared, to be heated close to the part in outside and makes its contraction.
Then, as needed through use the cleaning solutions such as water to with film semiconductor chip 31 cutting belt 20 In the cleaning process that is cleaned of 31 side of semiconductor chip, then as shown in fig. 6, picking up from cutting belt 20 with film Semiconductor chip 31 (pickup process).For example, in the figure of cutting belt 20 downside make mechanism for picking pin component 44 rise and every Cutting belt 20 jack up as pick up object the semiconductor chip 31 with film, then pass through suction jig 45 adsorbed It keeps.In pickup process, the jack-up speed of pin component 44 is, for example, 1~100mm/ seconds, and the jack-up amount of pin component 44 is, for example, 50 ~3000 μm.
Then, as shown in fig. 7, carrying out flip-chip peace to the semiconductor chip 31 with film relative to installation base plate 51 Dress.As installation base plate 51, such as can enumerate: lead frame, belt combine (TAB:Tape Automated automatically Bonding) film and circuit board.Semiconductor chip 31 is electrically connected with installation base plate 51 by convex block 52.Specifically, borrowing Helping convex block 52 to make, semiconductor chip 31 forms the electrode pad (illustration omitted) that surface side has in its circuit and installation base plate 51 has Some portion of terminal (illustration omitted) electrical connections.Convex block 52 is, for example, soldering projection.Semiconductor chip 31 and installation base plate 51 it Between be folded with the filler 53 of heat cure.For example, can be by installation base plate 51 on it with the semiconductor chip for having film Pass through so-called reflow process in the state of 31, to realize being flip-chip mounted relative to installation base plate 51 of semiconductor chip 31.
It so, it is possible to manufacture and the back side of semiconductor chip 31 be provided with the semiconductor dress of the film 10 ' as protective film It sets.
For the manufacturing method for semiconductor device, semiconductor crystal wafer 30A can also be replaced to fit in dicing tape integrated viscous Such above-mentioned composition, fits in dicing tape integrated bonding for the semiconductor crystal wafer 30B made as follows on connecing property piece X On property piece X.
Production for semiconductor crystal wafer 30B, firstly, as shown in (a) of Fig. 8 and (b) of Fig. 8, on semiconductor crystal wafer W It is formed slot segmentation 30b (slot segmentation formation process).Semiconductor crystal wafer W has the 1st face Wa and the 2nd face Wb.Semiconductor crystal wafer W has 1st face Wa and the 2nd face Wb.The 1st face side Wa in semiconductor crystal wafer W is equipped with various semiconductor elements and (saves sketch map Show) and wire structures needed for being formed with the semiconductor element on the 1st face Wa etc. (illustration omitted).In the process, tool There is the wafer processing of adhesive surface T2a with after being bonded to the 2nd face side Wb of semiconductor crystal wafer W with T2, in wafer processing use with T2 In the state of maintaining semiconductor crystal wafer W, formed using rotary cutters such as cutter devices in the 1st face side Wa of semiconductor crystal wafer W The slot segmentation 30b of prescribed depth.Slot segmentation 30b is for semiconductor crystal wafer W to be separated into the gap of semiconductor chip unit (figure In 8 and Fig. 9, slot segmentation 30b schematically is indicated with thick line).
Then, as shown in (c) of Fig. 8, carry out: the wafer processing with adhesive surface T3a is used with T3 to semiconductor crystal wafer W's The fitting in the 1st face side Wa；And wafer processing with T2 from the removing on semiconductor crystal wafer W.
Then, as shown in (d) of Fig. 8, in the state that wafer processing is with semiconductor crystal wafer W is maintained on band T3, pass through Semiconductor crystal wafer W is set to be thinned to defined thickness (wafer thinning process) from the grinding on the 2nd face Wb.Grinding can be with It is carried out using the abrasive machining device for having grinding grinding stone.By the wafer thinning process, in present embodiment, energy can be formed Monolithic turns to the semiconductor crystal wafer 30B of multiple semiconductor chips 31.For semiconductor crystal wafer 30B, specifically, in the wafer With (interconnecting piece) for connecting the position for becoming the position that monolithic turns to multiple semiconductor chips 31 in the 2nd face side Wb.Partly lead The 2nd face side the Wb front end of the 2nd face Wb and slot segmentation 30b of the thickness of interconnecting piece in body wafer 30B, i.e. semiconductor crystal wafer 30B The distance between be, for example, 1~30 μm.
(a) of Fig. 9 and (b) of Fig. 9, which are represented in particular in, fits in dicing tape integrated cementability for semiconductor crystal wafer 30B The 1st extension process (cold extension process) carried out after piece X.In the process, the top for the hollow cylindrical that expanding unit has It plays downside of the component 43 in the figure of dicing tape integrated cementability piece X to be connected to cutting belt 20 and rise, in semiconductor die Circle 30B's includes making the dicing tape integrated cementability piece X for being fitted with semiconductor crystal wafer 30B on two-dimensional directional radially and circumferentially Cutting belt 20 stretch mode be extended.For the extension, answered in cutting belt 20 with the stretching for for example generating 15~32MPa The condition of power carries out.Temperature condition in cold extension process is, for example, 0 DEG C or less, preferably -20~-5 DEG C, more preferably -15 ~-5 DEG C, more preferably -15 DEG C.Expansion rate (jack up component 43 rise speed) in cold extension process is, for example, 0.1~ 100mm/ seconds.In addition, the propagation in cold extension process is, for example, 3~16mm.
In the process, semiconductor crystal wafer 30B cuts off at the position that thin-walled is easily broken off and occurs to semiconductor core The singualtion of piece 31.At the same time, in this process, in the film 10 closely sealed with the adhesive phase 22 for the cutting belt 20 to be extended In the closely sealed each region deformation of each semiconductor chip 31 inhibited, on the other hand, the segmentation between semiconductor chip 31 The opposite position of slot, in the state of not generating such deformation inhibiting effect, the tensile stress for resulting from cutting belt 20 is acted as With.As a result, the opposite position of slot segmentation between semiconductor chip 31 in film 10 is cut off.For thus obtained band There is the semiconductor chip 31 of film, referring to Fig. 6 and after above-mentioned pickup process, for the peace in semiconductor device fabrication Fill process.
In the manufacturing method for semiconductor device, (d) referring to Fig. 8 can also be replaced and pass through above-mentioned wafer thinning process, And carry out wafer thinning process shown in Fig. 10.It is thin in wafer shown in Fig. 10 (c) of reference Fig. 8 and after the above process In chemical industry sequence, in the state that wafer processing is with semiconductor crystal wafer W is maintained on band T3, by adding from the grinding on the 2nd face Wb Work and make the wafer thinning to defined thickness, can be formed comprising multiple semiconductor chips 31 and be held in wafer processing band T3 Semiconductor crystal wafer dividing body 30C.It, can be using grinding wafer until slot segmentation 30b itself reveals in the 2nd face side Wb in the process Method (the 1st method) out, can also be using grinding wafer until before reaching slot segmentation 30b from the 2nd face side Wb and then passing through Make to crack between slot segmentation 30b and the 2nd face Wb to the effect of the pressing force of wafer from grindstone and forms semiconductor die The method (the 2nd method) of circle dividing body 30C.It is different according to used method, can be suitable for referring to (a) of Fig. 8 and (b) of Fig. 8 Determine the slot segmentation 30b formed as described above, the 1st face Wa of distance depth.In Figure 10, for point by the 1st method Slot 30b or slot segmentation 30b and crackle connected to it Jing Guo the 2nd method are cut, is schematically indicated with thick line.It can also incite somebody to action The semiconductor crystal wafer dividing body 30C so made replaces semiconductor crystal wafer 30A to fit in dicing tape integrated cementability piece X, so Above-mentioned each process is carried out referring to Fig. 3 to Fig. 6 afterwards.
(a) of Figure 11 and (b) of Figure 11 are specifically illustrated in semiconductor crystal wafer dividing body 30C and fit in dicing tape integrated glue The 1st extension process (cold extension process) carried out after connecing property piece X.In this process, the hollow cylindrical that expanding unit has The jack-up component 43 of shape downside in the figure of dicing tape integrated cementability piece X abuts and rises with cutting belt 20, is fitted with half The cutting belt 20 of the dicing tape integrated cementability piece X of semiconductor wafer dividing body 30C is in the packet of semiconductor crystal wafer dividing body 30C The mode that two-dimensional square radially and circumferentially is pulled up is included to be extended.The extension generates such as 1~100MPa in cutting belt 20 Tensile stress under conditions of carry out.Temperature condition in the process is, for example, 0 DEG C or less, is preferably -20~-5 DEG C, more preferable It is -15~-5 DEG C, more preferably -15 DEG C.Expansion rate (jack up component 43 rise speed) in the process is, for example, 1~ 500mm/ seconds.In addition, the propagation in the process is, for example, 50~200mm.Cold extension process in this way, thus will cutting Film 10 with one-piece type cementability piece X cuts off into the film 10 ' of small pieces and obtains the semiconductor chip 31 with film.Specifically For, in the process, in the film 10 closely sealed with the adhesive phase 22 for the cutting belt 20 to be extended, semiconductor crystal wafer dividing body It deforms and is inhibited in the closely sealed each region of each semiconductor chip 31 of 30C, on the other hand, between semiconductor chip 31 Slot segmentation 30b opposite position, in the state of not generating such deformation inhibiting effect, the stretching for resulting from cutting belt 20 is answered Power works.As a result, being cut off at the opposite position the slot segmentation 30b in film 10 between semiconductor chip 31.For The thus obtained semiconductor chip 31 with film, referring to Fig. 6 and after above-mentioned pickup process, for semiconductor device system Installation procedure during making.
For the dicing tape integrated cementability piece X that for example can be used in above such semiconductor device fabrication In film 10 (piece of the cementability as back-protective film), as described above, the Film test piece (cementability of width 2mm Piece test film) carried out under conditions of initial chuck spacing 16mm, -15 DEG C and load are increased speed 1.2N/ minutes stretching examination The breaking strength tested is 1.2N or less, preferably 1.1N or less, more preferably 1N or less.This composition is for example above-mentioned such Semiconductor device manufacturing process in the available semiconductor chip 31 with film and use dicing tape integrated bonding Property piece X come in the case where implementing to cut off with extension process (above-mentioned 1st extension process), inhibiting to cut off in cutting belt 20 Film 10 and to act on cutting off in terms of power for the film 10 be suitable.
For the film 10 (piece of the cementability as back-protective film) in dicing tape integrated cementability piece X, such as Upper described, the Film test piece (cementability piece test film) of width 2mm increases in initial chuck spacing 16mm, -15 DEG C and load The elongation at break in tension test carried out under conditions of speed 1.2N/ minutes be 1.2% or less, preferably 1.1% or less, More preferably 1% or less.This composition is available with thin for example in the manufacturing process of semiconductor device as described above The semiconductor chip 31 of film simultaneously is implemented to cut off with extension process (above-mentioned 1st extension work using dicing tape integrated cementability piece X Sequence) in the case where, it is suitable in terms of the tensile elongation needed for inhibiting to cut off the film 10 in cutting belt 20.
As described above, dicing tape integrated cementability piece X is suitable for inhibiting to want to cut off the film 10 in cutting belt 20 The power of cutting off of the film 10 is acted on, and is suitable for inhibiting to be used for 10 tensile elongation of the film cut off.By such cutting belt one When figure cementability piece X is for cutting off in extension process, it is adapted for carrying out well cutting off for film 10.
For the film 10 in dicing tape integrated cementability piece X, there is stepped construction, the stepped construction as described above Include the crystalline substance in a manner of it can remove with the closely sealed Laser labeling layer 11 of the adhesive phase 22 of cutting belt 20 (the 1st layer) and on it Circle fixing layer 12 (the 2nd layer).For this composition, suitable for individually embodying in film 10 to cutting belt adhesive phase side surface Required characteristic and to characteristic required by the workpiece attaching surface opposite with the surface.In addition, Laser labeling layer 11 Thickness relative to the thickness of wafer fixing layer 12 ratio as described above be preferably 0.2~4, more preferably 0.2~1.5, it is more excellent It is selected as 0.3~1.3, more preferably 0.6~1.1.For this composition, taking into account to the Laser labeling layer 11 the (the 1st in film 10 Layer) and wafer fixing layer 12 (the 2nd layer) required by it is preferred in terms of function.
The dicing tape integrated cementability piece X of present embodiment is dicing tape integrated back-protective film, as described above, Laser labeling layer 11 has thermosetting property and wafer fixing layer 12 shows thermoplasticity.Have for Laser labeling layer 11 heat cured This composition, by so-called reflux after the marking carried out to 11 surface of the Laser labeling layer implementation of film 10 by laser labelling In the case where the pyroprocesses such as process, it is adapted ensure that the identification of marking information.In addition, Laser labeling layer 11 is with heat cured Wafer fixing layer 12 shows thermoplastic this composition simultaneously, suitable for realizing that the good of film 10 is cut in extension process cutting off It is disconnected.That is, in film 10 Laser labeling layer 11 have thermosetting property and wafer fixing layer 12 shows above-mentioned composition as thermoplasticity Ensuring and being well suitable in terms of the realization of cutting off property for the identification of marking information is taken into account in film 10.
For dicing tape integrated cementability piece X, as described above, the thickness of film 10 is preferably 8 μm or more, is more preferably 10 μm or more and preferably 20 μm or less, more preferably 15 μm or less.It is above-mentioned in film 10 realizing for this composition In terms of good cutting off property preferably.
Embodiment
(embodiment 1)
The production > of < back-protective film
In the production of back-protective film in dicing tape integrated cementability piece, firstly, being fabricated separately to form laser mark Remember the 1st resin film of layer (LM layers) and forms the 2nd resin film of wafer fixing layer (WM layers).
In the production of 1st resin film, firstly, by acrylic resin A1(trade name " Teisan Resin SG-P3 ", Weight average molecular weight is 850,000, and glass transition temperature Tg is 12 DEG C, Nagase ChemteX Corporation system) 100 mass Part, epoxy resin B1(trade name " KI-3000-4 ", Nippon Steel & Sumitomo Metal Corporation's system) 51.5 mass parts, epoxy resin B2 (trade name " JER YL980 ", Mitsubishi chemical Co., Ltd's system) 22 mass parts, bakelite C1(trade name " MEH7851-SS ", It is bright and chemical conversion Co. Ltd. system) 76.5 mass parts, filler (trade name " SO-25R ", silica, average grain diameter be 0.5 μm, Admatechs Company system) 187.5 mass parts, black based dye (trade name " OIL BLACK BS ", Orient Chemical Industries Co., Ltd. system) 15 mass parts and thermal curing catalyst Z1(trade name " CUREZOL 2PZ ", Shikoku Chem's system) 22 mass parts be added methyl ethyl ketone in mixed, obtain 36 mass % of solid component concentration Resin combination.Then, using coating machine in PET isolation film (50 μ of thickness with the face for implementing silicone release processing M) it is coated with the resin combination in silicone release process face and forms resin composition layer.Then, to group at 130 DEG C It closes nitride layer to carry out heating in 2 minutes and make it dry and heat cure, it is thin that 8 μm of thickness of the 1st resin has been made on PET isolation film Film (film that Laser labeling layer will be formed).
In the production of 2nd resin film, firstly, by acrylic resin A1(trade name " Teisan Resin SG-P3 ", Nagase ChemteX Corporation system) 100 mass parts, epoxy resin B3(trade name " EPPN-501HY ", Japanese chemical drug Co. Ltd. system) 65.5 mass parts, bakelite C2(trade name " MEH7851-H ", bright and chemical conversion Co. Ltd. system) 84.5 matter Measure part, filler (trade name " SO-25R ", silica, average grain diameter are 0.5 μm, Admatechs Company system) 177 mass Part and black based dye (trade name " OIL BLACK BS ", Orient Chemical Industries Co., Ltd. system) 15 Mass parts are added in methyl ethyl ketone and are mixed, and obtain the resin combination of 36 mass % of solid component concentration.Then, using coating Machine is coated in the silicone release process face of the PET isolation film (50 μm of thickness) with the face for implementing silicone release processing The resin combination simultaneously forms resin composition layer.Then, heating in 2 minutes is carried out simultaneously to the composition layer at 130 DEG C It makes it dry, the 2nd resin film that 7 μm of thickness of uncured state has been made on PET isolation film (will form wafer to fix The film of layer).
Using laminating machine to the 2nd resin on the 1st resin film and PET isolation film on the PET isolation film as above made Film is bonded.Specifically, making the dew of the 1st and the 2nd resin film under conditions of 100 DEG C of temperature and pressure 0.85MPa It appears to be bonded each other.The back-protective film of embodiment 1 is so made.By embodiment 1 and aftermentioned each embodiment and Ge Bi It is shown in table 1 compared with the composition of Laser labeling layer (LM layers) and wafer fixing layer (WM layers) in example, 2 (in table 1,2, indicate each layer The unit of each numerical value of composition is opposite " mass parts " in this layer).
The production > of < cutting belt
It will include acrylic acid 2- second in the reaction vessel for having cooling tube, nitrogen ingress pipe, thermometer and agitating device Own 100 mass parts of ester of base, 19 mass parts of acrylic acid 2- hydroxy methacrylate, 0.4 mass of benzoyl peroxide as polymerization initiator The mixture of part and 80 mass parts of toluene as polymer solvent stirs 10 hours at 60 DEG C, under nitrogen atmosphere, and (polymerization is anti- It answers).It is obtained as a result, containing acrylic polymer P1Polymer solution.Then, acrylic polymer P will be contained1's Polymer solution, 2- methacryloxyethyl isocyanates (MOI) and the tin dilaurate two as addition reaction catalyst The mixture of butyl tin stirs 60 hours (addition reaction) at 50 DEG C, under air atmosphere.In the reaction solution, relative to above-mentioned Acrylic polymer P1The compounding amount of 100 mass parts, MOI is 12 mass parts, relative to acrylic polymer P1100 mass Part, the compounding amount of dibutyl tin dilaurate is 0.1 mass parts.By the addition reaction, obtain containing side chain have methyl Acrylate-based acrylic polymer P2Polymer solution.Then, in the polymer solution, relative to acrylic compounds Polymer P2Polyisocyanate compound (trade name " CORONATE L ", the TOSOH of 2 mass parts is added in 100 mass parts CORPORATION system), the Photoepolymerizationinitiater initiater (trade name " IRGACURE 369 ", BASF AG's system) of 2 mass parts and toluene is simultaneously It is mixed, obtains the adhesive composition of 28 mass % of solid component concentration.Then, using coating machine have implemented Coating adhesive composition and shape in the silicone release process face of the PET isolation film (50 μm of thickness) in the face of machine silicon demoulding processing At adhesive composition layer.Then, the heat drying for carrying out 2 minutes at 120 DEG C for composition layer, in PET isolation film On form 5 μm of thickness of adhesive phase.Then, using laminating machine, at room temperature by vinyl-vinyl acetate copolymer (EVA) substrate (trade name " NRW#125 ", 125 μm of thickness, GUNZE LIMITED system) made fits in the dew of the adhesive phase On appearing.Then, which is carried out to preservation in 72 hours at 23 DEG C.Cutting belt is so made.
The production > of the dicing tape integrated back-protective film of <
By the circle with the above-mentioned back-protective film Punching Technology of the embodiment 1 of PET isolation film at diameter 330mm. By the above-mentioned cutting belt Punching Technology with PET isolation film at the circle of diameter 370mm.Then, from the back-protective film The PET isolation film of upper removing Laser labeling layer side, removes PET isolation film, then using laminating machine to carrying on the back from the cutting belt The Laser labeling layer side exposed in the protective film of face and the adhesive phase side exposed in cutting belt are bonded.In the fitting In, fitting speed is set as 10mm/ minutes, temperature condition is set as 40 DEG C, pressure condition is set as 0.15MPa.In addition, to cut It cuts while the center of band is aligned with the consistent mode in the center of back-protective film and is bonded.Having made as a result, has The dicing tape integrated back-protective film of the embodiment 1 of stepped construction comprising cutting belt and back-protective film.
(embodiment 2)
When making the 2nd resin film (resin film that wafer fixing layer will be formed), acrylic resin has been used A2(trade name " Teisan Resin SG-N50 ", weight average molecular weight are 450,000, and glass transition temperature Tg is 0 DEG C, Nagase ChemteX Corporation system) 100 mass parts replace acrylic resin A1100 mass parts；And by filler (trade name " SO-25R ", Admatechs Company system) content be set as 217 mass parts instead of 177 mass parts, in addition to this with implementation The dicing tape integrated back-protective film of example 1 has similarly made the dicing tape integrated back-protective film of embodiment 2.
(embodiment 3)
When making the 2nd resin film (resin film that wafer fixing layer will be formed), acrylic resin has been used A2(trade name " Teisan Resin SG-N50 ", Nagase ChemteX Corporation system) 100 mass parts replace propylene Acid resin A1100 mass parts；And the content of filler (trade name " SO-25R ", Admatechs Company system) is set as 265 mass parts replace 177 mass parts, make in the same manner as the dicing tape integrated back-protective film of embodiment 1 in addition to this The dicing tape integrated back-protective film of embodiment 3.
(embodiment 4)
When making the 2nd resin film (resin film that wafer fixing layer will be formed), acrylic resin has been used A3(trade name " Teisan Resin SG-708-6 ", weight average molecular weight are 700,000, and glass transition temperature Tg is 4 DEG C, Nagase ChemteX Corporation system) 100 mass parts replace acrylic resin A1100 mass parts；And by filler The content of (trade name " SO-25R ", Admatechs Company system) is set as 265 mass parts instead of 177 mass parts, in addition to this The dicing tape integrated back-protective of embodiment 4 has been made in the same manner as the dicing tape integrated back-protective film of embodiment 1 Film.
(embodiment 5)
When making the 2nd resin film (resin film that wafer fixing layer will be formed), acrylic resin has been used A4(trade name " Teisan Resin SG-70L ", Nagase ChemteX Corporation system) 100 mass parts replace propylene Acid resin A1100 mass parts have made reality in the same manner as the dicing tape integrated back-protective film of embodiment 1 in addition to this Apply the dicing tape integrated back-protective film of example 5.
(embodiment 6)
The thickness of Laser labeling layer is set as 20 μm by 8 μm when making back-protective film, and by wafer fixing layer Thickness is set as 5 μm by 7 μm, has made implementation in the same manner as the dicing tape integrated back-protective film of embodiment 1 in addition to this The dicing tape integrated back-protective film of example 6.
(embodiment 7)
The thickness of Laser labeling layer is set as 5 μm by 8 μm when making back-protective film, and by the thickness of wafer fixing layer Degree is set as 5 μm by 7 μm, has made embodiment 7 in the same manner as the dicing tape integrated back-protective film of embodiment 1 in addition to this Dicing tape integrated back-protective film.
(embodiment 8)
The thickness of Laser labeling layer is set as 10 μm by 8 μm when making back-protective film, and by wafer fixing layer Thickness is set as 15 μm by 7 μm, has made implementation in the same manner as the dicing tape integrated back-protective film of embodiment 1 in addition to this The dicing tape integrated back-protective film of example 8.
(comparative example 1)
By acrylic resin A1(trade name " Teisan Resin SG-P3 ", Nagase ChemteX Corporation system) 100 mass parts, epoxy resin B3(trade name " EPPN-501HY ", Nippon Kayaku K. K's system) 70 matter Measure part, bakelite C2(trade name " MEH7851-SS ", bright and chemical conversion Co. Ltd. system) 80 mass parts, filler (trade name " SO-25R ", Admatechs Company system) 175 mass parts and black based dye (trade name " OIL BLACK BS ", Orient Chemical Industries Co., Ltd. system) 15 mass parts be added methyl ethyl ketone in mixed, obtain solid at Divide the resin combination of 30 mass % of concentration.Then, using coating machine in the PET with the face for implementing silicone release processing The resin combination is coated in the silicone release process face of isolation film (50 μm of thickness) and forms resin composition layer.It connects , heating in 2 minutes is carried out to the composition layer at 130 DEG C and is made it dry, 25 μm of thickness have been made on PET isolation film Back-protective film.Then, replace the above-mentioned back-protective in embodiment 1 thin using the back-protective film of comparative example 1 Film has made the cutting belt one of comparative example 1 in the same manner as the dicing tape integrated back-protective film of embodiment 1 in addition to this Type back-protective film.
(comparative example 2)
By acrylic resin A1(trade name " Teisan Resin SG-P3 ", Nagase ChemteX Corporation system) 100 mass parts, epoxy resin B1(trade name " KI-3000-4 ", Nippon Steel & Sumitomo Metal Corporation System) 50 mass parts, epoxy resin B2(trade name " JER YL980 ", Mitsubishi chemical Co., Ltd's system) 20 mass parts, phenolic resin C1(trade name " MEH7851-SS ", it is bright and chemical conversion Co. Ltd. system) 75 mass parts, filler (trade name " SO-25R ", Admatechs Company system) 175 mass parts and black based dye (trade name " OIL BLACK BS ", Orient Chemical Industries Co., Ltd. system) 15 mass parts be added methyl ethyl ketone in mixed, obtain solid component concentration The resin combination of 30 mass %.Then, using coating machine in the PET isolation film with the face for implementing silicone release processing The resin combination is coated in the silicone release process face of (50 μm of thickness) and forms resin composition layer.Then, 130 Heating in 2 minutes is carried out to the composition layer at DEG C and is made it dry, 25 μm of thickness of the back side has been made on PET isolation film and has been protected Protect film.Then, using the back-protective film of comparative example 2 replace embodiment 1 in above-mentioned back-protective film, except this with The dicing tape integrated back side for having made comparative example 2 in the same manner as the dicing tape integrated back-protective film of embodiment 1 outside is protected Protect film.
(comparative example 3)
The thickness of wafer fixing layer is set as 17 μm by 7 μm when making back-protective film, in addition to this with embodiment 1 Dicing tape integrated back-protective film similarly made the dicing tape integrated back-protective film of comparative example 3.
The breaking strength and elongation at break > of < back-protective film
It is (wide for each Film test piece cut out from the above-mentioned back-protective film of upper Examples 1 to 8 and comparative example 1~3 Spend 2mm × length 20mm), it determines using TMA testing machine (trade name " TMA Q400 ", TA INSTRUMENT Co., Ltd. System) carry out tension test in breaking strength (N) and elongation at break (%).Film test piece for measurement is at -15 DEG C It is lower that the operating mode of the testing machine is set as stretch mode after holding in 5 minutes, in initial chuck spacing 16mm, -15 DEG C The tension test is carried out under conditions of increasing speed 1.2N/ minutes with load.In the load upper limit 1.2N of the TMA testing machine used When unbroken, breaking strength is evaluated as " more than 1.2 ", for elongation at break, is evaluated as being more than stretching at load 1.2N Long rate (%).These results are shown in table 1,2.
The cutting off property > of < back-protective film
Using above-mentioned each dicing tape integrated back-protective film of Examples 1 to 8 and comparative example 1~3, carried out with Lower such bonding process, the 1st extension process (cold extension process) for cutting off and the 2nd extension process for separation are (often Temperature extension process).
In bonding process, wafer processing band (trade name " UB-3083D ", Nitto Denko Corp's system) will be held in Semiconductor crystal wafer dividing body fit in the back-protective film of dicing tape integrated back-protective film, then, from semiconductor Wafer processing band has been removed on wafer dividing body.For fitting, using laminating machine, temperature condition is set as 80 DEG C, by pressure Condition is set as 0.15MPa.In addition, semiconductor crystal wafer dividing body is the substance for being formed as follows and preparing.Firstly, for place In the state for being held in wafer processing band (trade name " V12S-R2-P ", Nitto Denko Corp's system) together with ring frame Bare silicon wafer (12 inches of diameter, 780 μm of thickness, Tokyo Chemical Co., Ltd system) uses cutter device (commodity from the face of one side Name " DFD6260 ", Disco Corporation system) slot segmentation (formation width of singualtion is formd by the rotary cutter 25 μm, the clathrate of 330 μm, one subregion 0.8mm × 0.8mm of depth).Then, in the fitting wafer processing of slot segmentation forming face After band (trade name " UB-3083D ", Nitto Denko Corp's system), above-mentioned wafer processing has been removed from wafer with band (quotient The name of an article " V12S-R2-P ").Then, using backgrinding apparatus (trade name " DGP8760 ", Disco Corporation system), By the wafer thinning to 300 μm of thickness and the grinding in the face (face of not formed slot segmentation) from the wafer other side.Shape as a result, At semiconductor crystal wafer dividing body (in the state for being held in wafer processing band).Comprising more in the semiconductor crystal wafer dividing body A semiconductor chip (0.8mm × 0.8mm).
Cold extension process uses mould separating device (trade name " Die Separator DDS2300 ", Disco Corporation system), it is carried out in the cold extension unit.Specifically, firstly, dividing at room temperature, with semiconductor crystal wafer Cut the SUS ring of 12 inches of diameter of stickup on the cutting belt adhesive phase in the above-mentioned dicing tape integrated back-protective film of body Frame (Disco Corporation system).Then, which is installed in device, in same dress Make to extend with the cutting belt of the dicing tape integrated back-protective film of semiconductor crystal wafer dividing body in the cold extension unit set. In the cold extension process, temperature is -15 DEG C, and expansion rate (jacking up speed) is 100mm/ seconds, and propagation (jack-up amount) is 15mm。
Room temperature extends process and uses mould separating device (trade name " Die Separator DDS2300 ", Disco Corporation system) it is carried out in the room temperature expanding element.Specifically, make to have passed through above-mentioned cold extension process with half The cutting belt of the dicing tape integrated back-protective film of semiconductor wafer dividing body extends in the room temperature expanding element of same device. In room temperature extension process, temperature is 23 DEG C, and expansion rate is 1mm/ seconds, propagation 15mm.Then, to have passed through room temperature Extension dicing tape integrated back-protective film, than workpiece attached area closer to outside peripheral part implement heating receive Contracting processing.In this process, heating temperature is 200 DEG C.
For the cutting off property of back-protective film, have passed through using dicing tape integrated back-protective film carry out with After upper such process, by overleaf protective film cut off produced in preset lines whole region the case where cutting off be evaluated as it is excellent (◎), by cutting off of being generated in back-protective film to be evaluated as the case where cutting off the 90% of preset lines more than or lower than 100% Good (zero) is evaluated as bad (×) the case where cutting off lower than cut off preset lines 90% for what is generated in back-protective film.It will It should be evaluation result is shown in table 1,2.
[evaluation]
According to the back-protective film of Examples 1 to 8, having the semiconductor chip of back-protective film in order to obtain In the expansion crystalline substance process carried out using dicing tape integrated back-protective film, it can be realized and well cut off.
[table 1]
[table 2]

Claims (7)

1. a kind of dicing tape integrated cementability piece, has:
With the cutting belt comprising substrate and the stepped construction of adhesive phase；And
In a manner of it can remove with the closely sealed cementability piece of the described adhesive layer of the cutting belt,
The cementability piece, the cementability piece test film of width 2mm is increased in initial chuck spacing 16mm, -15 DEG C and load The breaking strength in tension test carried out under conditions of acceleration 1.2N/ minutes is 1.2N or less and elongation at break is 1.2% or less.
2. dicing tape integrated cementability piece according to claim 1, wherein the cementability piece have comprising with it is described The 2nd layer of stepped construction on closely sealed the 1st layer and the 1st layer of the described adhesive layer of cutting belt.
3. dicing tape integrated cementability piece according to claim 2, wherein the 1st layer of the thickness is relative to described The ratio of 2nd layer of thickness is 0.2~4.
4. dicing tape integrated cementability piece according to any one of claim 1 to 3, wherein the cementability piece is Back-protective film.
5. dicing tape integrated cementability piece according to claim 2 or 3, wherein the cementability piece is back-protective Film, described 1st layer has thermosetting property.
6. dicing tape integrated cementability piece according to claim 5, wherein described 2nd layer shows thermoplasticity.
7. dicing tape integrated cementability piece according to claim 2 or 3, wherein the cementability piece is back-protective Film, described 2nd layer shows thermoplasticity.
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CN110028917A (en) * 2017-12-14 2019-07-19 日东电工株式会社 Adhering film and adhering film with cutting belt
CN111439213A (en) * 2020-04-30 2020-07-24 吉林大学 Vehicle body, bonding and coating structure for automatic driving rain and snow prevention and heat preservation
CN112521878A (en) * 2019-09-19 2021-03-19 日东电工株式会社 Adhesive tape
CN113493662A (en) * 2020-03-18 2021-10-12 琳得科株式会社 Film-like adhesive and dicing die
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KR20190001544A (en) 2019-01-04
JP6876540B2 (en) 2021-05-26

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