CN109119400A - High current carrying capacity multilayer ceramic substrate and preparation method thereof - Google Patents
High current carrying capacity multilayer ceramic substrate and preparation method thereof Download PDFInfo
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- CN109119400A CN109119400A CN201811115460.3A CN201811115460A CN109119400A CN 109119400 A CN109119400 A CN 109119400A CN 201811115460 A CN201811115460 A CN 201811115460A CN 109119400 A CN109119400 A CN 109119400A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 124
- 239000000758 substrate Substances 0.000 title claims abstract description 43
- 238000002360 preparation method Methods 0.000 title abstract description 4
- 239000004020 conductor Substances 0.000 claims abstract description 53
- 238000000034 method Methods 0.000 claims description 45
- 238000013467 fragmentation Methods 0.000 claims description 18
- 238000006062 fragmentation reaction Methods 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 230000011218 segmentation Effects 0.000 claims description 17
- 238000003475 lamination Methods 0.000 claims description 13
- 238000004080 punching Methods 0.000 claims description 12
- 238000011049 filling Methods 0.000 claims description 11
- 238000010304 firing Methods 0.000 claims description 7
- 238000005452 bending Methods 0.000 claims description 6
- 239000002002 slurry Substances 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 238000005245 sintering Methods 0.000 description 15
- 238000007731 hot pressing Methods 0.000 description 13
- 238000007639 printing Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 238000003556 assay Methods 0.000 description 4
- 238000010345 tape casting Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000002791 soaking Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 210000005056 cell body Anatomy 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
The invention discloses a kind of high current carrying capacity multilayer ceramic substrates and preparation method thereof, continuous through slot is formed on ceramic chips by continuous jet-bedding, conductor is filled in the continuous through slot to be routed, considerably increase conductor wiring thickness, the current-carrying capability of multilayer ceramic substrate is remarkably reinforced, so that more relatively high power circuit products can realize miniaturization, planarization and integrated using multilayer wiring ceramic substrate, the integrated level of such circuit product is improved.
Description
Technical field
The present invention relates to field of electronic devices, and in particular to a kind of high current carrying capacity multilayer ceramic substrate and its production side
Method.
Background technique
Multilayer ceramic substrate can make electronic apparatus system miniaturization and integrated, wiring conductor in multilayer ceramic substrate
Current-carrying capability has a significant impact to the reliability tool of substrate.Existing multilayer ceramic substrate be multiple ceramic chips punchings, filling perforation,
Wiring, then made of lamination, compacting and sintering, and the wiring on ceramic chips then generallys use screen printed thick film technique shape
At.When using screen printed thick film technique, the thickness of wiring and the printing screen plate of silk-screen printing (are related to silk screen line footpath, mesh number, cream
Glue thickness etc.), the factors such as printing parameter (being related to Squeegee hardness, pressure, speed, angle etc.) and slurry viscosity it is related.Multilayer
The common ceramic chips thickness of ceramic substrate is generally 0.1~0.3mm, prints wiring by thick film screen printing mode on ceramic chips and leads
Body, after sintering, wiring conductor thickness is generally 6~12 μm.
Since multilayer ceramic substrate uses thick film screen printing conductor wiring, printed conductor is sintered thickness generally only ten microns
It is thick.It is routed through larger current to the circuit substrate, then must widen conductor wiring, but widen conductor wiring, will make to be routed
Density and packing density decline, influence the original intention of the miniaturization of system.Therefore existing multilayer ceramic substrate is only applicable to function
The little circuit product of rate, and circuit product biggish for the power such as flat surface transformer of power module, relatively high power and logical
It crosses circuit board of larger current etc. and Thick film multilayer wiring conductor is shared with regard to discomfort.
Summary of the invention
In view of the above deficiencies, the present invention provides a kind of high current carrying capacity multilayer ceramic substrate, by continuous jet-bedding in green
On piece forms continuous through slot, and conductor is filled in the continuous through slot and is routed, conductor wiring thickness is considerably increased,
The current-carrying capability of multilayer ceramic substrate is remarkably reinforced, so that more relatively high power circuit products can use multilayer wiring
Ceramic substrate realize miniaturization, planarization and it is integrated, improve the integrated level of such circuit product.
The present invention to achieve the goals above, using following technical scheme:
A kind of high current carrying capacity multilayer ceramic substrate includes laminated body, and the laminated body is overrided to form by ceramic chips, described
Ceramic chips are equipped with the continuous through slot for filling conductor paste.The present invention is continuous punching groove shaped at continuous perforation on ceramic chips
Slot, while carrying out conductor wiring in the continuous through slot can make the thickness of wiring conductor reach the sintered thickness of ceramic chips
Degree, conductor thickness obviously increase than printing film thickness very much, so that the current-carrying capability of multilayer ceramic substrate greatly improves.
Further, the continuous through slot be by way of laser or mechanical jet-bedding on ceramic chips continuous punching shape
At continuous through slot, formed punch used in the jet-bedding is square drift or round punch.It is understood that rectangular punching here
The side length of head or the diameter of round punch do not limit specifically, according to the size of ceramic chips and the size of required current-carrying capability
Selection.
Preferably, use the step distance of the continuous jet-bedding of the square drift for the square drift side length 0.8~
0.95 times；Use the step distance of the continuous jet-bedding of the round punch for the 1/6~1/2 of the round punch diameter.
Further, the continuous through slot is continuous linear through slot or continuous bend through slot.
Preferably, the continuous linear through slot is length of arrangement wire≤10mm continuous linear through slot or length of arrangement wire >
The continuous linear through slot of 10mm, the continuous bend through slot are square spiral through slot or round screw thread through slot.
It is furthermore preferred that the continuous linear through slot of the length of arrangement wire≤10mm is formed using one-time continuous jet-bedding, it is described
The continuous linear through slot of length of arrangement wire > 10mm and the continuous bend through slot are formed using double fragmentation jet-bedding, wherein
Jet-bedding process is continuous punching groove shaped at continuous through slot；The double fragmentation jet-bedding is to be segmented jet-bedding for the first time
The through slot that several intervals are formed on ceramic chips fills out slot with conductor paste, after dry, in the phase that first time segmentation jet-bedding is formed
The interval of adjacent through slot carries out second of segmentation jet-bedding, then fills out slot with conductor paste, dry, forms whole continuous linear
Or bending through slot.The region for being bent wiring is being needed to be difficult to operate because wiring area ceramic chips lose when constraint picks and places, this hair
It is bright that the various warp architecture conductor wirings such as spiral conductor wiring in ceramic chips may be implemented using double fragmentation jet-bedding.
It is another object of the present invention to provide a kind of production methods of high current carrying capacity multilayer ceramic substrate, including life
Porcelain process, cabling processes, lamination process and firing process, the cabling processes include the continuous jet-bedding process of ceramic chips and fill out slot cloth
Line procedures.
Further, the green process is to be cast ceramic slurry to form ceramic chips；
The lamination process is that will be routed the ceramic layer contraposition lamination completed, and obtains ceramic layer stack；
The firing process is that ceramic layer stack is fired into multilayer ceramic substrate.
Further, it is described fill out slot cabling processes be using mask conductor paste to the continuous through slots of ceramic chips into
Row fills out slot wiring.
Preferably, the mask is ceramic chips notacoria or sheet metal, and the mask divulges position and the life
The perforation groove location of tile is identical.Mask plate is substituted with notacoria, is carried out filling out slot wiring with conductor paste, is not required in addition make exposure mask
Plate, while continuously to penetrate through groove location with ceramic chips identical for the position of divulging of mask, eliminates the contraposition of mask plate and ceramic chips
Process realizes and is not required to mask plate and printing screen plate production multilayer ceramic substrate.
Compared with prior art, the invention has the following advantages:
1, the wiring of existing multilayer ceramic substrate generallys use thick film print technology and is formed, and wiring conductor is sintered thickness only ten
Several microns, and carrying out conductor wiring in the continuous through slot that the present invention is formed on ceramic chips using the form of continuous jet-bedding can make
The thickness of wiring conductor reaches the sintered thickness of ceramic chips (common ceramic chips sintering thickness is generally 0.1~0.3mm), conductor
Thickness obviously increases than printing film thickness very much.Therefore, using its electric current of multilayer ceramic substrate made from production method of the invention
Current-carrying capability greatly improves.
2, ceramic chips conductor wiring usually is used for the production mask plate such as sheet metal in the prior art.It can be in the present invention
Mask plate is substituted with notacoria, fill out slot wiring with conductor paste, be not required in addition make mask plate, while mask divulges position
It sets and continuously penetrates through that groove location is identical with ceramic chips, eliminate the contraposition process of mask plate and ceramic chips, realize and be not required to mask plate
Multilayer ceramic substrate is made with printing screen plate.
3, when ceramic chips need to be bent wiring, bending wiring is difficult to grasp because wiring area ceramic chips lose when constraint picks and places
Make.The present invention realizes the various warp architecture conductor wirings such as spiral conductor wiring in ceramic chips using double fragmentation jet-bedding.
Detailed description of the invention
The ceramic chips top view of the most narrow place H and the widest part D of through slot when Fig. 1 is round punch of the present invention continuous jet-bedding；
Fig. 2 is the schematic perspective view for the ceramic chips that one-time continuous jet-bedding forms through slot in the embodiment of the present invention 1；
Fig. 3 is the ceramic chips structural schematic diagram for filling out slot in the embodiment of the present invention 1 using notacoria；
Fig. 4 is to complete to fill out the ceramic chips structural schematic diagram of slot after removing notacoria in the embodiment of the present invention 1；
Fig. 5 is that ceramic chips process the flow diagram to form laminated body in the embodiment of the present invention 1；
Fig. 6 be in the embodiment of the present invention 2 in double fragmentation jet-bedding after first time jet-bedding ceramic chips top view；
Fig. 7 is the top view of ceramic chips after the completion of double fragmentation jet-bedding in the embodiment of the present invention 2；
Fig. 8 is the top view of ceramic chips after the completion of double fragmentation jet-bedding in the embodiment of the present invention 3.
In figure: 1. ceramic chips, 2. continuous through slots, 3. notacorias, 4. conductor pastes, L1. first layer ceramic chips, L2. second
Layer ceramic chips, L3. third layer ceramic chips, the most narrow width of the continuous through slot of H., the most wide degree of the continuous through slot of D., A. laminated body,
B. the section of laminated body A.
Specific embodiment
The invention discloses a kind of high current carrying capacity multilayer ceramic substrates, include laminated body, the laminated body is by ceramic chips
It is overrided to form, the ceramic chips are equipped with the continuous through slot for filling conductor paste.Present invention continuous punching on ceramic chips
Slot forms continuous through slot, while carrying out conductor wiring in the continuous through slot can make the thickness of wiring conductor reach raw
The sintered thickness of tile, conductor thickness obviously increase than printing film thickness very much, so that the current-carrying capability of multilayer ceramic substrate is big
It is big to improve.
Laser or mechanical continuous punching groove shaped at formed punch used in continuous jet-bedding can be can be used in the continuous through slot
Square drift is also possible to round punch.It is generally desirable to square drift is selected in continuous punching flowing current separation when carrying out straight wire wiring,
And round punch is not only suitable for straight wire wiring, is also applied for bending wire wiring.The side length of square drift and round punch
Diameter is not specifically limited, and can be selected according to specific design, is in embodiment of the invention, square drift
The diameter of side length or round punch is not especially limited, can be according to the size selection of required ceramic chips.Wherein square drift connects
The step distance of continuous jet-bedding is 0.8~0.95 times of the square drift side length；The step distance of the continuous jet-bedding of round punch is
The 1/6~1/2 of the round punch diameter, step distance and the continuous through slot of the continuous jet-bedding of round punch described here
Flatness of edges is related, and physical relationship is shown in Table 1, flatness of edges described here be continuous through slot most narrow place H with it is most wide
The ratio between the width for locating D, please refers to Fig. 1.
The step distance of the continuous jet-bedding of 1 round punch of table and the flatness of edges relationship of continuous through slot
Further, the continuous through slot that continuous jet-bedding is formed on ceramic chips is continuous linear through slot or continuous bend
Through slot, wherein the continuous linear through slot is length of arrangement wire≤10mm continuous linear through slot or length of arrangement wire >
The continuous linear through slot of 10mm, the continuous bend through slot are square spiral through slot or round screw thread through slot.Specifically
, the continuous linear through slot of the length of arrangement wire≤10mm is formed using one-time continuous jet-bedding, the length of arrangement wire > 10mm
Continuous linear through slot and the continuous bend through slot be all made of double fragmentation jet-bedding and formed, wherein it is described once to connect
Continuous jet-bedding process is continuous punching groove shaped at continuous linear through slot using square drift or round punch；The double fragmentation punching
Slot is the through slot that segmentation jet-bedding forms several intervals on ceramic chips for the first time, slot is filled out with conductor paste, after dry, first
The interval for the adjacent through slot that secondary segmentation jet-bedding is formed carries out second of segmentation jet-bedding, then fills out slot with conductor paste, does
It is dry, form whole continuous through slot.Specifically, when using double fragmentation jet-bedding, if jet-bedding position periphery has no through slot,
The length for the through slot that then jet-bedding is formed is 2~10mm；If there is through slot on jet-bedding position periphery, the through slot that jet-bedding is formed
Length≤3mm.
More specifically, when carrying out straight wire wiring, as wiring lead length≤10mm, continuous jet-bedding uses square drift
Or round punch carries out one-time continuous jet-bedding；As wiring lead length > 10mm, continuous jet-bedding uses square drift or circle
Shape formed punch double fragmentation jet-bedding is segmented the through slot that jet-bedding forms several intervals on ceramic chips for the first time, is filled out with conductor paste
Slot after dry, carries out second of segmentation jet-bedding in the interval for the adjacent through slot that first time segmentation jet-bedding is formed, then with leading
Somaplasm material fills out slot, dry, forms whole continuous linear through slot.The length of double fragmentation jet-bedding through slot is 2~5mm,
Longitudinal gap is 2~5mm.
When carrying out bending wiring, such as square spiral wiring or round screw thread wiring, it is nonlinear to be also possible to other
Wiring carries out double fragmentation jet-bedding using round punch, is segmented the perforation that jet-bedding forms several intervals on ceramic chips for the first time
Slot fills out slot with conductor paste, after dry, carries out second point in the interval for the adjacent through slot that first time segmentation jet-bedding is formed
Section jet-bedding, then fills out slot with conductor paste, dry, forms whole continuous bend through slot.What double fragmentation jet-bedding was formed passes through
The length of through slot is 1~3mm, and longitudinal gap is 1~3mm.
The present invention also provides a kind of production method of high current carrying capacity multilayer ceramic substrate, production process includes green
Process, cabling processes, lamination process and firing process.Wherein, the green technique is exactly to use the tape casting by ceramic slurry stream
Prolong to form ceramic chips, preparation process here is conventional technical means in the art, is not described in detail here.
The cabling processes include the continuous jet-bedding process of ceramic chips and fill out slot cabling processes, the continuous jet-bedding work of ceramic chips
Sequence is that the continuous jet-bedding of ceramic chips is formed to continuous through slot on the ceramic chips, and the slot cabling processes of filling out are connected to ceramic chips
It after the completion of continuous jet-bedding, is carried out filling out slot wiring with conductor paste using mask, the position of divulging of mask connects with ceramic chips at this time
The position of continuous through slot is identical, when ceramic chips have notacoria, can use notacoria alternative mask version, be not required to production exposure mask at this time
Plate, at the same mask to divulge position identical as the position of the continuous through slot of ceramic chips, eliminate pair of mask plate and ceramic chips
Position process realizes and is not required to mask plate and printing screen plate production multilayer ceramic substrate；When ceramic chips are without notacoria, then gold can be used
Belong to thin slice production mask to carry out filling out slot wiring.
The lamination process and firing process is ordinary skill in the art means, in the present invention, the stacking
Process is that the ceramic chips filled out after the completion of slot are successively aligned lamination, and hot pressing earnestly obtains green base.Wherein, hot pressing temperature 62
DEG C~68 DEG C, hot pressing pressure is 3000psi~3800psi, time about 8~12min.
The firing process be by hot pressing and earnestly after green base be put into dumping in sintering furnace, cofiring.Wherein, dumping liter
Warm rate is 0.8~2 DEG C/min；Sintering heating rate is 4~8 DEG C/min, and sintering peak temperature is 850~860 DEG C, when peak temperature is kept the temperature
Between be 10~17min, rate of temperature fall be 5~10 DEG C/min.It prints and is sintered after carrying out surface after cofiring, be cut into through laser scribing
Required shape, after the assay was approved as finished product.
Further clear and complete explanation is done to technical solution of the present invention below with reference to specific embodiment and attached drawing.
Embodiment 1: using the substrate of the straight wire of LTCC (low-temperature co-fired ceramics) porcelain band production high current carrying capacity.In this reality
It applies in example, length of arrangement wire≤10mm of straight wire.Side length is used to lead to for the square drift of 0.3mm the ceramic chips 1 of tape casting
It crosses one-time continuous jet-bedding and forms continuous through slot 2 as shown in Figure 2, in the present embodiment, ceramic chips 1 are covered with notacoria 3, notacoria 3
To divulge position identical as the position of continuous through slot 2, then carried out filling out slot with conductor paste 4, after drying, removal notacoria 3 is such as
Shown in Fig. 3, the ceramic chips 1 filled with conductor paste 4 are obtained, as shown in figure 4, printed electrode and conducting wire on ceramic chips 1.Wait lead
After soma is dry, three layers of ceramic chips L1, L2, L3 is taken successively to carry out contraposition lamination, hot pressing, earnestly form laminated body A, as shown in fig. 6,
B is the cross-sectional view of laminated body A in Fig. 5.In the present embodiment, hot pressing temperature is 65 DEG C, hot pressing pressure 3200psi, when
Between about 10min.Then put into a sintering furnace dumping, cofiring.In the present embodiment, dumping heating rate is 1.2 DEG C/min, sintering
Heating rate is 6 DEG C/min, and sintering peak temperature is 855 DEG C, and peak temperature soaking time is 15min, and rate of temperature fall is 8 DEG C/min.Cofiring
It prints and is sintered after carrying out surface conductor afterwards, be cut into required shape through laser scribing, high current carrying capacity is made after the assay was approved
The substrate of straight wire.
Embodiment 2: using the substrate of the square spiral conducting wire of LTCC green band production high current carrying capacity.By tape casting
Ceramic chips use diameter to form continuous square spiral through slot by double fragmentation jet-bedding for the round punch of 0.1mm, in this reality
The step distance for applying round punch in example is selected as 1/2 (relative to flatness of edges H/D=86.6%) of round punch diameter.
The through slot that segmentation jet-bedding for the first time forms several intervals on ceramic chips is carried out, slot is filled out with conductor paste, as shown in fig. 6, dry
After dry, second of segmentation jet-bedding is carried out in the interval for the adjacent through slot that first time segmentation jet-bedding is formed, is then starched with conductor
Material fills out slot, dry, whole continuous square spiral through slot is formed, as shown in fig. 7, then printed electrode and conducting wire etc..It is dry
Afterwards, each layer ceramic chips are successively subjected to contraposition lamination, hot pressing, earnestly form laminated body, in the present embodiment, hot pressing temperature 62
DEG C, hot pressing pressure 3000psi, time about 8min.After earnestly, the laminated body is placed in dumping in sintering furnace, cofiring.Row
Glue heating rate is 0.8 DEG C/min, and sintering heating rate is 4 DEG C/min, and sintering peak temperature is 850 DEG C, and peak temperature soaking time is
10min, initial rate of temperature fall are 5 DEG C/min.It prints and is sintered after carrying out surface conductor after cofiring, needed for being cut into through laser scribing
The substrate of the square spiral conducting wire of high current carrying capacity is made in shape after the assay was approved.
Embodiment 3: using the substrate of the round screw thread conducting wire of LTCC green band production high current carrying capacity.By tape casting
Ceramic chips use diameter to form continuous circular spiral through slot by double fragmentation jet-bedding for the round punch of 0.4mm, in this reality
The step distance for applying round punch in example is selected as 1/4 (relative to flatness of edges H/D=96.8%) of round punch diameter,
The through slot that segmentation jet-bedding for the first time forms several intervals on ceramic chips is carried out, slot is filled out with conductor paste, after dry, first
The interval for the adjacent through slot that secondary segmentation jet-bedding is formed carries out second of segmentation jet-bedding, then fills out slot with conductor paste, dry,
Whole continuous circular spiral through slot is formed, as shown in figure 8, then printed electrode and conducting wire etc..After drying, by each layer green
Piece successively carries out contraposition lamination, hot pressing, earnestly forms laminated body, and in the present embodiment, hot pressing temperature is 68 DEG C, and hot pressing pressure is
3800psi, time about 12min.After earnestly, dumping, cofiring in sintering furnace.Dumping heating rate is 2 DEG C/min；Sintering heating
Rate is 8 DEG C/min, and sintering peak temperature is 860 DEG C, and peak temperature soaking time is 17min, and initial rate of temperature fall is 10 DEG C/min.Cofiring
It prints and is sintered after carrying out surface conductor afterwards, be cut into required shape through laser scribing, high current-carrying volume ability is made after the assay was approved
Round screw thread conducting wire substrate.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, other any changes, modifications, substitutions, combinations, simplifications made without departing from the spirit and principles of the present invention,
It should be equivalent alternative, be included within the scope of the present invention.
Claims (10)
1. a kind of high current carrying capacity multilayer ceramic substrate includes laminated body, the laminated body is overrided to form by ceramic chips, feature
Be: the ceramic chips are equipped with the continuous through slot for filling conductor paste.
2. high current carrying capacity multilayer ceramic substrate as described in claim 1, it is characterised in that: the continuous through slot is to pass through
The mode of the laser or mechanical jet-bedding continuous through slot that continuous punching is formed on ceramic chips, formed punch used in the jet-bedding is just
Shape formed punch or round punch.
3. high current carrying capacity multilayer ceramic substrate as claimed in claim 2, it is characterised in that: continuous using the square drift
The step distance of jet-bedding is 0.8 ~ 0.95 times of the square drift side length；Using the continuous jet-bedding of the round punch stepping away from
From 1/6 ~ 1/2 for the round punch diameter.
4. high current carrying capacity multilayer ceramic substrate as described in claim 1, it is characterised in that: the continuous through slot is continuous
Straight line through slot or continuous bend through slot.
5. high current carrying capacity multilayer ceramic substrate as claimed in claim 4, it is characterised in that: the continuous linear through slot is
The continuous linear through slot of length of arrangement wire≤10mm continuous linear through slot or length of arrangement wire > 10mm, the continuous bend are passed through
Through slot is square spiral through slot or round screw thread through slot.
6. high current carrying capacity multilayer ceramic substrate as claimed in claim 5, it is characterised in that: the length of arrangement wire≤10mm's
Continuous linear through slot is formed using one-time continuous jet-bedding, the continuous linear through slot of the length of arrangement wire > 10mm and the company
Continuous bending through slot is formed using double fragmentation jet-bedding, wherein a jet-bedding process is continuous punching groove shaped at continuously passing through
Through slot；The double fragmentation jet-bedding is the through slot that segmentation jet-bedding forms several intervals on ceramic chips for the first time, uses conductor
Slurry fills out slot, after dry, carries out second of segmentation jet-bedding in the interval for the adjacent through slot that first time segmentation jet-bedding is formed, so
Slot is filled out with conductor paste afterwards, it is dry, form whole continuous linear or bending through slot.
7. a kind of production method of any one of such as claim 1 ~ 6 high current carrying capacity multilayer ceramic substrate, including green work
Sequence, cabling processes, lamination process and firing process, it is characterised in that: the cabling processes include the continuous jet-bedding process of ceramic chips
With fill out slot cabling processes.
8. production method as claimed in claim 7, it is characterised in that: the green process is to be cast ceramic slurry to form life
Tile；
The lamination process is that will be routed the ceramic layer contraposition lamination completed, and obtains ceramic layer stack；
The firing process is that ceramic layer stack is fired into multilayer ceramic substrate.
9. production method as claimed in claim 7, it is characterised in that: the slot cabling processes of filling out are to utilize mask conductor
Slurry carries out the continuous through slot of ceramic chips to fill out slot wiring.
10. production method as claimed in claim 9, it is characterised in that: the mask be ceramic chips notacoria or sheet metal,
The mask to divulge position identical as the perforation groove location of the ceramic chips.
Priority Applications (1)
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|---|---|---|---|
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Cited By (1)
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| CN114743787A (en) * | 2022-03-29 | 2022-07-12 | 中国电子科技集团公司第四十三研究所 | Manufacturing method of detachable LTCC planar transformer |
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| CN109119400B (en) | 2024-04-09 |
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